Gallium nitride power device

Abstract

The utility model discloses a gallium nitride power device, which belongs to the technical field of semiconductor devices, and comprises a plurality of gallium nitride power chip bodies, a substrate, a heat conduction block, a packaging structure and a heat dissipation structure, the substrate is used for installing the plurality of gallium nitride power chip bodies and the heat conduction block, the heat conduction block is connected with the upper part of the substrate, and the heat dissipation structure is connected with the packaging structure. The center of the heat conduction block is provided with a cavity structure for accommodating the plurality of gallium nitride power chip bodies, the cavity structure is connected with a fine metal grid, and the electrode areas of the plurality of gallium nitride power chip bodies are connected through the fine metal grid; a sliding groove is formed in the position, upwards away from the gallium nitride power chip bodies, of the heat conduction block. The packaging structure is arranged on the heat conduction block and is used for protecting the gallium nitride power chip bodies; the heat dissipation structures are uniformly arranged at four side parts of the heat conduction block and are used for dissipating heat of the heat conduction block and the plurality of gallium nitride power chips; the LED lamp has the advantages of being convenient to disassemble and maintain while good heat dissipation performance is guaranteed.

Description

Technical Field

[0001] This utility model belongs to the field of semiconductor device technology, and in particular relates to a gallium nitride power device. Background Technology

[0002] Gallium nitride (GaN) power devices are widely used in the field of power electronics due to their excellent high frequency, high efficiency and low conduction loss characteristics, especially in high frequency switching power supplies, electric vehicle drive circuits and wireless charging systems.

[0003] Traditional gallium nitride (GaN) power devices typically employ a single-sided package design, meaning one side of the device is used for packaging while the other side is used for heat dissipation. This design limits heat dissipation efficiency because only one side is available for heat dissipation, resulting in insufficient heat dissipation area. Currently, many GaN power devices use a fixed package cover, a design that is inconvenient for disassembly and maintenance. When a device fails or its performance degrades, complex disassembly and replacement operations are required, which not only increases maintenance costs but may also damage the package material.

[0004] To address the shortcomings of existing technologies, this invention provides a gallium nitride power device, aiming to solve the aforementioned problems. Utility Model Content

[0005] The purpose of this invention is to overcome the shortcomings of the prior art and provide a gallium nitride power device that can ensure good heat dissipation performance while being easy to disassemble and maintain.

[0006] To achieve the above objectives, this utility model employs the following technical solution:

[0007] A gallium nitride power device includes multiple gallium nitride power chip bodies, and further includes:

[0008] A substrate for mounting multiple gallium nitride power chip bodies;

[0009] A heat-conducting block is connected to the top of the substrate, and a cavity structure for accommodating multiple gallium nitride power chip bodies is formed in the center of the heat-conducting block. A fine metal grid is connected to the cavity structure, and the electrode areas of the multiple gallium nitride power chip bodies are connected through the fine metal grid. A groove is formed on the heat-conducting block at an upward position away from the multiple gallium nitride power chip bodies.

[0010] The packaging structure is disposed on the heat-conducting block and is used to protect multiple gallium nitride power chip bodies;

[0011] A heat dissipation structure is installed on the top and four sides of the heat-conducting block for dissipating heat from the heat-conducting block and multiple gallium nitride power chips.

[0012] Preferably, the encapsulation structure includes a first movable cover plate and a second movable cover plate; both the first and second movable cover plates change the opening and closing state of the encapsulation structure through the sliding groove; the side wall of the first movable cover plate is provided with a plurality of transverse through holes; the side wall of the second movable cover plate is provided with a plurality of transverse positioning rods adapted to the plurality of transverse through holes; the top of the first movable cover plate and the plurality of transverse positioning rods are provided with a plurality of vertical through holes; the positions of the plurality of vertical through holes correspond to the positions of the plurality of transverse through holes.

[0013] Preferably, the encapsulation structure further includes a pair of limiting handles, which are respectively located above the first movable cover and the second movable cover and near the edge of the side wall. These limiting handles not only assist in opening and closing the encapsulation structure, but also prevent the first and second movable covers from shifting too far to the sides and failing to open and close properly.

[0014] Preferably, the multiple gallium nitride power chip bodies are connected in parallel electrical connection.

[0015] Preferably, the heat dissipation structure includes a layered heat dissipation fin assembly, the heat dissipation fin assembly including a top fin connected to the top of the heat-conducting block and side fins connected to the four sides of the heat-conducting block, the top fin having a heat dissipation port corresponding to the cavity structure at its center, and the side fins having a circular groove at their center, with a fan installed in the circular groove to accelerate the heat dissipation of the heat dissipation fins.

[0016] Preferably, the substrate is provided with mounting holes at the four opposite corners for connecting to external devices.

[0017] Compared with the prior art, the beneficial effects achieved by this utility model are as follows:

[0018] 1. This utility model, by designing the openable and closable packaging structure and heat dissipation structure on the same side, is no longer limited to single-sided packaging and single-sided heat dissipation scenarios, increasing the versatility of gallium nitride power device installation. First, the heat-conducting block is connected to the top of the substrate, and its cavity structure is used to accommodate the gallium nitride power chip body, which helps to concentrate heat dissipation. Second, the packaging structure not only protects the gallium nitride power device from the influence of the external environment, but also provides convenient disassembly and maintenance through the design of the movable cover plate. The first and second movable cover plates, through the cooperation of horizontal through holes, vertical through holes and positioning rods, ensure the stability and sealing of the package.

[0019] 2. By connecting multiple gallium nitride power chip bodies in parallel, this utility model can reduce the overall on-resistance of the gallium nitride power device, improve the current carrying capacity of the entire device, and ensure that other chips can continue to work even if one chip fails, thereby improving the reliability of the system.

[0020] 3. This utility model features heat dissipation fins evenly installed on the top and sides of the heat-conducting block, with a heat dissipation port corresponding to the cavity structure at the center of the top fins and a circular groove at the center of the side fins containing a fan. This design can accelerate airflow and improve the heat dissipation effect of the heat dissipation fins. This layered distribution design not only increases the heat dissipation area but also helps to form an orderly heat flow, improving the overall heat dissipation performance. Attached Figure Description

[0021] Figure 1 This is a schematic diagram of the structure of this utility model.

[0022] Figure 2 This is a schematic diagram of the structure of the movable cover plate A of this utility model.

[0023] Figure 3 This is a partially disconnected view of the present invention.

[0024] Figure 4 This is a structural schematic diagram of the movable cover plate of this utility model from another perspective.

[0025] Figure 5 This is a top view of the present invention.

[0026] Figure 6 This is a partially open view of the micro-metal grid and gallium nitride chip of this utility model.

[0027] The components include: 1. Gallium nitride power chip; 2. Substrate; 201. Mounting hole; 3. Micro-metal grid; 4. Heat-conducting block; 401. Slide groove; 5. Packaging structure; 501. First movable cover plate; 501a. Horizontal through hole; 502. Second movable cover plate; 502a. Horizontal positioning rod; 503. Vertical through hole; 504. Limiting handle; 6. Heat dissipation structure; 601. Heat dissipation fin assembly; 601a. ​​Top fin; 601b. Side fin; 602. Fan. Detailed Implementation

[0028] The present invention will be further described below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solution of the present invention, and should not be used to limit the scope of protection of the present invention.

[0029] In the description of this utility model, it should be understood that the terms "middle," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model. Furthermore, in the description of this utility model, unless otherwise stated, "a plurality of" means two or more.

[0030] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model based on the specific circumstances.

[0031] refer to Figures 1-6 This embodiment provides a gallium nitride power device, including multiple gallium nitride power chip bodies 1, and also includes a substrate 2 for mounting the multiple gallium nitride power chip bodies 1. The substrate 2 is also provided with mounting holes 201 at the four opposite corners for connecting to external devices.

[0032] It should be noted that the external devices mentioned above can be other heat dissipation devices or other chip devices, and the role of substrate 2 is to provide a stable physical support for the chip.

[0033] A heat-conducting block 4 is connected to the top of the substrate 2, and a cavity structure for accommodating multiple gallium nitride power chip bodies 1 is formed in the center of the heat-conducting block 4. A micro-metal grid 3 is connected to the cavity structure. The electrode areas of the multiple gallium nitride power chip bodies 1 are connected through the micro-metal grid 3. The multiple gallium nitride power chip bodies 1 are connected in parallel. In this embodiment, by connecting multiple gallium nitride power chip bodies 1 in parallel, the resistance value of the entire on-resistance of the gallium nitride power device can be reduced, the current carrying capacity of the entire device can be improved, and other chips can continue to work when one chip fails.

[0034] It should be noted that the thermal block 4 can be connected to the substrate 2 via silicone grease or other thermal conductive agents.

[0035] Furthermore, the heat-conducting block 4 has a groove 401 at the upward position of the multiple gallium nitride power chips 1; the encapsulation structure 5 is disposed on the heat-conducting block 4 to protect the multiple gallium nitride power chips 1; the heat dissipation structure 6 is installed on the top and four sides of the heat-conducting block 4 to dissipate heat from the heat-conducting block 4 and the multiple gallium nitride power chips 1.

[0036] To enable the opening and closing of the encapsulation structure 5, the encapsulation structure 5 in this embodiment includes a first movable cover plate 501 and a second movable cover plate 502. Both the first movable cover plate 501 and the second movable cover plate 502 change the opening and closing state of the encapsulation structure 5 through the sliding groove 401. The side wall of the first movable cover plate 501 is provided with a plurality of transverse through holes 501a, and the side wall of the second movable cover plate 502 is provided with a plurality of transverse positioning rods 502a that are adapted to the plurality of transverse through holes 501a. The top of the first movable cover plate 501 and the plurality of transverse positioning rods 502a are provided with a plurality of vertical through holes 503, and the positions of the plurality of vertical through holes 503 correspond to the positions of the plurality of transverse through holes 501a.

[0037] It should be noted that the transverse through hole 501a and the transverse positioning rod 502a are used to assist in positioning when the encapsulation structure is closed, and the vertical through hole 503 is used to fix the encapsulation structure with positioning screws when it is closed, so as to prevent the first movable cover plate 501 and the second movable cover plate 502 from separating.

[0038] To assist in the opening and closing of the encapsulation structure 5, the encapsulation structure 5 in this embodiment is also provided with a pair of limiting handles 504. The pair of limiting handles 504 are respectively located above the first movable cover plate 501 and the second movable cover plate 502 and near the edge of the side wall. More ingeniously, the height of the pair of limiting handles 504 in this embodiment is higher than the top of the heat conduction block 4. Therefore, the pair of limiting handles 504 can also prevent the first movable cover plate 501 and the second movable cover plate 502 from shifting too much to the sides and failing to open and close normally.

[0039] It should be noted that the encapsulation structure 5 can be made of aluminum alloy, and the limit handle 504 can be made of high-temperature resistant material to prevent heat deformation.

[0040] Furthermore, the heat dissipation structure 6 includes a layered heat dissipation fin assembly 601. The heat dissipation fin assembly 601 includes a top fin 601a connected to the top of the heat-conducting block 4 and side fins 601b connected to the four sides of the heat-conducting block 4. The top fin 601a has a heat dissipation port corresponding to the cavity structure at its center. The side fins 601b have a circular groove at their center. A fan 602 that accelerates the heat dissipation of the heat dissipation fins is installed in the circular groove. This layered distribution design not only increases the heat dissipation area but also helps to form an orderly heat flow.

[0041] Working principle:

[0042] Heat dissipation structure 6: The heat-conducting block 4 is located above the substrate 2 and has a central cavity structure for accommodating the gallium nitride power chip 1 body. A fine metal grid 3 is connected to the cavity structure. First, the electrode areas of multiple gallium nitride power chips 1 bodies are connected to the fine metal grid 3. Then, heat dissipation is achieved through heat dissipation structures 6 evenly distributed on the top and four sides of the heat-conducting block 4. The heat dissipation structure 6 includes a heat dissipation fin assembly 601, which includes top fins 601a and side fins 601b. The top fin 601a has a heat dissipation vent at its center, corresponding to the cavity structure, which helps to expel hot air. The side fins 601b have a circular groove at their center, housing a fan 602 to accelerate airflow and improve heat dissipation efficiency.

[0043] Package Structure 5: Located on the heat-conducting block 4, package structure 5 aims to protect the gallium nitride power chip 1 from external environmental influences such as dust and moisture. Package structure 5 includes a first movable cover plate 501 and a second movable cover plate 502, which are opened and closed via a sliding groove 401 mechanism for easy maintenance and repair. A pair of limiting handles 504 are provided on the first and second movable cover plates 501 and 502. When opening the first and second movable cover plates 501 and 502, operators use the limiting handles 504 to peel them open to the left and right. When closing the first and second movable cover plates 501 and 502, operators use the limiting handles 504 to move them inwards and secure them with positioning screws passing through the vertical through-hole 503. These handles not only help operators open and close package structure 5 but also prevent excessive cover plate displacement, ensuring that package structure 5 can open and close normally.

[0044] Parallel electrical connection: The gallium nitride power chips 1 are connected in parallel. This method is equivalent to connecting two resistors in parallel, which reduces the on-resistance of the entire gallium nitride power device, which helps to improve the current carrying capacity of the device, and allows other chips to continue to work when one chip fails.

[0045] Mounting holes 201: Mounting holes 201 are provided at the four opposite corners of the substrate 2. These holes are used to fix gallium nitride power devices to external devices, ensuring stable installation of the devices.

[0046] In summary, the gallium nitride power device of this invention achieves centralized heat dissipation, convenient maintenance, improved reliability through parallel chip connection, and enhanced heat dissipation through efficient airflow through innovative packaging and heat dissipation design, thereby improving the performance and service life of the device.

[0047] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the technical principles of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. A gallium nitride power device, comprising a plurality of gallium nitride power chip (1) bodies, characterized in that, Also includes: Substrate (2) for mounting multiple gallium nitride power chip (1) bodies; A heat-conducting block (4) is connected to the top of the substrate (2), and a cavity structure for accommodating multiple gallium nitride power chip (1) bodies is opened in the center of the heat-conducting block (4). A fine metal grid (3) is connected to the cavity structure, and the electrode areas of the multiple gallium nitride power chip (1) bodies are connected through the fine metal grid (3). A groove (401) is opened on the heat-conducting block (4) at an upward position away from the multiple gallium nitride power chip (1) bodies. The packaging structure (5) is disposed on the heat-conducting block (4) and is used to protect the bodies of multiple gallium nitride power chips (1); A heat dissipation structure (6) is installed on the top and four sides of the heat-conducting block (4) for dissipating heat from the heat-conducting block (4) and multiple gallium nitride power chips (1).

2. The gallium nitride power device according to claim 1, characterized in that, The encapsulation structure (5) includes a first movable cover plate (501) and a second movable cover plate (502); the first movable cover plate (501) and the second movable cover plate (502) both change the opening and closing state of the encapsulation structure (5) through the slide groove (401). The side wall of the first movable cover plate (501) is provided with a plurality of transverse through holes (501a), and the side wall of the second movable cover plate (502) is provided with a plurality of transverse positioning rods (502a) adapted to the transverse through holes (501a). The top of the first movable cover plate (501) and the plurality of transverse positioning rods (502a) are provided with a plurality of vertical through holes (503), and the positions of the plurality of vertical through holes (503) correspond to the positions of the plurality of transverse through holes (501a).

3. The gallium nitride power device according to claim 2, characterized in that, The encapsulation structure (5) also includes a pair of limiting handles (504), which are respectively located above the first movable cover plate (501) and the second movable cover plate (502) and near the edge of the side wall.

4. The gallium nitride power device according to claim 1, characterized in that, The multiple gallium nitride power chips (1) are connected in parallel electrical connection.

5. The gallium nitride power device according to claim 1, characterized in that, The heat dissipation structure (6) includes a heat dissipation fin group (601) distributed layer by layer. The heat dissipation fin group (601) includes a top fin (601a) connected to the top of the heat conduction block (4) and side fins (601b) connected to the four sides of the heat conduction block (4). The top fin (601a) has a heat dissipation port corresponding to the cavity structure at its center. The side fins (601b) have a circular groove at their center. A fan (602) for accelerating the heat dissipation of the heat dissipation fins is installed in the circular groove.

6. The gallium nitride power device according to claim 1, characterized in that, The substrate (2) also has mounting holes (201) at its four opposite corners for connecting to external devices.

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