Gallium oxide photoelectric detector

Abstract

The utility model provides a gallium oxide photoelectric detector, which comprises a gallium oxide functional layer and a metal electrode, the metal electrode is electrically contacted with the gallium oxide functional layer, the metal electrode comprises a copper-containing metal matrix and a copper oxidation interface layer attached to the surface of the copper-containing metal matrix, and the copper oxidation interface layer is electrically contacted with the gallium oxide functional layer. And the copper oxidation interface layer is arranged between the copper metal matrix and the gallium oxide functional layer. The light-dark ratio of the gallium oxide photoelectric detector is remarkably high, the production cost of the gallium oxide photoelectric detector is remarkably low, and industrial application of the gallium oxide photoelectric detector is facilitated.

Description

Technical Field

[0001] This utility model relates to the field of photoelectric detection technology, and in particular to a gallium oxide photodetector. Background Technology

[0002] Gallium oxide (GaO) materials possess a high bandgap of 4.9 eV, enabling efficient detection in the deep ultraviolet band without alloying or doping. This makes it crucial for applications in missile early warning, flame detection, high-voltage line corona monitoring, and ultraviolet sterilization. Furthermore, GaO materials exhibit low dark current, high temperature resistance, and radiation resistance, making them highly promising for high-energy radiation detection, such as X-rays.

[0003] Gallium oxide (GaO) photodetectors typically use metal materials as electrodes, forming Schottky contacts between the metal and GaO materials. The work function of the metal directly determines the Schottky barrier, thus affecting the device's dark current and light-to-dark ratio. Gold has a significantly higher work function and is therefore frequently used as an electrode in GaO photodetectors. However, the high production cost of gold hinders the large-scale application of GaO photodetectors, and the device's light-to-dark ratio still needs further improvement. Utility Model Content

[0004] Therefore, it is necessary to provide a gallium oxide photodetector that can improve the device's light-to-dark ratio while reducing production costs.

[0005] This application provides a gallium oxide photodetector, which includes a gallium oxide functional layer and a metal electrode. The metal electrode is in electrical contact with the gallium oxide functional layer. The metal electrode includes a copper-containing metal substrate and a copper oxide interface layer attached to the surface of the copper-containing metal substrate. The copper oxide interface layer is disposed between the copper metal substrate and the gallium oxide functional layer.

[0006] In some embodiments of this application, the copper metal substrate and the copper oxide interface layer are an integral structure.

[0007] In some embodiments of this application, the thickness of the copper oxide interface layer is ≤5nm.

[0008] In some embodiments of this application, there are at least two metal electrodes, both of which are electrically in contact with the gallium oxide functional layer, and the two metal electrodes are provided with an insulating gap.

[0009] In some embodiments of this application, the gallium oxide photodetector further includes a substrate, a gallium oxide functional layer disposed on the substrate, the gallium oxide functional layer having opposing top and bottom surfaces, the bottom surface being closer to the substrate and the top surface being farther from the substrate, and the two metal electrodes being a first electrode and a second electrode, respectively; wherein,

[0010] The first electrode is disposed in contact with the top surface of the gallium oxide functional layer, and the second electrode is disposed in contact with the bottom surface of the gallium oxide functional layer.

[0011] In some embodiments of this application, the gallium oxide photodetector further includes a first insulating layer and / or a second insulating layer;

[0012] A portion of the first electrode is disposed on the top surface of the gallium oxide functional layer, and another portion of the first electrode is disposed on a region of the substrate that does not have the gallium oxide functional layer. At least a portion of the first insulating layer is disposed between the first electrode and the substrate, and the first insulating layer insulatingly separates the first electrode and the second electrode.

[0013] A portion of the second electrode is disposed between the gallium oxide functional layer and the substrate, and another portion of the second electrode is disposed on a region of the substrate that does not have the gallium oxide functional layer. The second insulating layer is disposed on the second electrode, and the second insulating layer has an opening that exposes a portion of the second electrode.

[0014] In some embodiments of this application, the gallium oxide photodetector further includes a substrate, a gallium oxide functional layer disposed on the substrate, the gallium oxide functional layer having opposing top and bottom surfaces, the bottom surface being closer to the substrate and the top surface being farther from the substrate, and the two metal electrodes being a first electrode and a second electrode, respectively; wherein,

[0015] Both the first electrode and the second electrode are disposed on the top surface of the gallium oxide functional layer; or,

[0016] Both the first electrode and the second electrode are disposed between the bottom surface of the gallium oxide functional layer and the substrate.

[0017] In some embodiments of this application, the gallium oxide functional layer is an amorphous gallium oxide-based thin film or a crystalline gallium oxide-based thin film.

[0018] In some embodiments of this application, the thickness of the gallium oxide functional layer is 20 nm to 10 μm.

[0019] In some embodiments of this application, the gallium oxide photodetector is an ultraviolet detector or an X-ray detector.

[0020] Traditional gallium oxide photodetectors typically use metals with high work functions, such as platinum, palladium, nickel, or gold, as metal electrodes to form a Schottky contact with a high potential barrier between the metal electrode and the gallium oxide material. Compared to metals like gold, copper has a relatively low work function, resulting in a lower potential barrier between copper and gallium oxide; therefore, it is generally not used as a metal electrode in gallium oxide photodetectors.

[0021] The gallium oxide photodetector of this application includes a gallium oxide functional layer and a metal electrode, wherein the metal electrode comprises a copper-containing metal substrate and a copper oxide interface layer. During their research, the inventors discovered that the copper oxide interface layer can increase the interfacial barrier between the copper metal substrate and the gallium oxide functional layer. This is beneficial for significantly reducing the dark current of the device while ensuring that the photocurrent remains essentially unchanged, thereby resulting in a higher light-to-dark ratio. Experimental results of this application show that, compared to using gold as the metal electrode, the gallium oxide photodetector with the above structure has a significantly higher light-to-dark ratio. Furthermore, the material cost of the copper metal substrate is significantly lower, and the copper oxide interface layer can be directly obtained by oxidizing the copper metal substrate. Therefore, the production cost of this gallium oxide photodetector is significantly lower, which is more conducive to its industrial application. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of the structure of a gallium oxide photodetector according to this application;

[0023] Figure 2 The periodic response curves of the gallium oxide photodetectors of Example 1 and Comparative Example 1 to X-rays are shown.

[0024] Figure 3 The light-to-dark ratio curves of the gallium oxide photodetectors of Example 1 and Comparative Example 1 obtained by testing them at different voltages.

[0025] Figure 4 The periodic response curves of the gallium oxide photodetector of Example 1 and Comparative Example 1 to 254nm ultraviolet light are shown.

[0026] Figure 5 This is a schematic diagram of another gallium oxide photodetector in this application;

[0027] Figure 6 This is a schematic diagram of another gallium oxide photodetector in this application.

[0028] The reference numerals and their meanings in the attached figures are as follows:

[0029] 110, Gallium oxide functional layer; 120, First electrode; 130, Second electrode; 140, Substrate; 150, First insulating layer; 160, Second insulating layer; 210, Gallium oxide functional layer; 220, First electrode; 230, Second electrode; 240, Substrate; 310, Gallium oxide functional layer; 320, First electrode; 330, Second electrode; 340, Substrate. Detailed Implementation

[0030] To facilitate understanding of this utility model, a more comprehensive description of it will be provided below in conjunction with embodiments and effect diagrams. The embodiments provide preferred embodiments of this utility model. However, this utility model can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided to provide a more thorough and complete understanding of the disclosure of this utility model.

[0031] It should be noted that when one component is referred to as being "fixed" to another component, it can be directly fixed to the other component or fixed to the other component through an intermediate component. When one component is referred to as being "connected" to another component, it can be directly connected to the other component, or there can be an intermediate component between the two components. Furthermore, in the description of this utility model, unless otherwise explicitly specified and limited, the terms "installed," "connected," and "attached" should be interpreted broadly. For example, it can be a fixed connection, a detachable connection, or an integrated connection. For example, it can be a mechanical connection or an electrical connection. For example, it can be a direct connection or an indirect connection through an intermediate component, or it can be a connection within two components. It should be understood that those skilled in the art can interpret the specific meaning of the above terms according to the specific circumstances without causing ambiguity.

[0032] Unless otherwise specified, in the description of this utility model, terms such as "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," which indicate orientation or positional relationship, are based on the orientation or positional relationship shown in the accompanying drawings of the utility model. They are only for the convenience and simplification of the description of the utility model and to help the reader understand it in conjunction with the accompanying drawings, and are not intended to limit or imply a specific orientation that the device or element referred to must have. Therefore, they should not be construed as limitations on this utility model.

[0033] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the implementation of the invention. The term "and / or" as used herein includes any and all combinations of one or more of the associated listed items. "More" herein includes combinations of two or more items.

[0034] This application provides a gallium oxide photodetector, which includes a gallium oxide functional layer and a metal electrode. The metal electrode is in electrical contact with the gallium oxide functional layer. The metal electrode includes a copper-containing metal substrate and a copper oxide interface layer attached to the surface of the copper-containing metal substrate. The copper oxide interface layer is disposed between the copper metal substrate and the gallium oxide functional layer.

[0035] Traditional gallium oxide photodetectors typically use metals with high work functions, such as platinum, palladium, nickel, or gold, as metal electrodes to form a Schottky contact with a high potential barrier between the metal electrode and the gallium oxide material. Compared to metals like gold, copper has a relatively low work function, resulting in a lower potential barrier between copper and gallium oxide; therefore, it is generally not used as a metal electrode in gallium oxide photodetectors.

[0036] The gallium oxide photodetector of this application includes a gallium oxide functional layer and a metal electrode, wherein the metal electrode comprises a copper-containing metal substrate and a copper oxide interface layer. During their research, the inventors discovered that the copper oxide interface layer can increase the interfacial barrier between the copper metal substrate and the gallium oxide functional layer. This is beneficial for significantly reducing the dark current of the device while ensuring that the photocurrent remains essentially unchanged, thereby resulting in a higher light-to-dark ratio. Experimental results of this application show that, compared to using gold as the metal electrode, the gallium oxide photodetector with the above structure has a significantly higher light-to-dark ratio. Furthermore, the material cost of the copper metal substrate is significantly lower, and the copper oxide interface layer can be directly obtained by oxidizing the copper metal substrate. Therefore, the production cost of this gallium oxide photodetector is significantly lower, which is more conducive to its industrial application.

[0037] Figure 1 This is a schematic diagram of the structure of a gallium oxide photodetector according to this application. (Refer to...) Figure 1 As shown, the gallium oxide photodetector includes a gallium oxide functional layer 110 and a metal electrode. The metal electrode is in electrical contact with the gallium oxide functional layer 110. The metal electrode includes a copper-containing metal substrate and a copper oxide interface layer attached to the surface of the copper-containing metal substrate. The copper oxide interface layer is disposed between the copper metal substrate and the gallium oxide functional layer 110.

[0038] Reference Figure 1 As shown in the example of this embodiment, the copper metal substrate and the copper oxide interface layer are an integral structure. Here, "integrated structure" means that there is no obvious material interface between the copper oxide interface layer and the copper metal substrate. By oxidizing the interface between the copper metal substrate and the gallium oxide functional layer 110, a copper oxide interface layer with an integral structure with the copper metal substrate can be formed. Designing the copper metal substrate and the copper oxide interface layer as an integral structure can reduce the resistance between the copper oxide interface layer and the copper metal substrate, ensuring that the gallium oxide photodetector has good photocurrent performance.

[0039] As an example of this embodiment, the thickness of the copper oxide interface layer is ≤5nm. Using a copper oxide interface layer with a thickness of less than 5nm enables a suitable potential barrier between the copper metal substrate and the gallium oxide functional layer 110, which helps to reduce the dark current of the gallium oxide photodetector while ensuring the normal conduction of the gallium oxide photodetector.

[0040] As a further example of this embodiment, the thickness of the copper oxide interface layer can be 0.5 nm to 5 nm. For example, the thickness of the copper oxide interface layer can be 0.5 nm, 0.6 nm, 0.7 nm, 0.8 nm, 0.9 nm, 1 nm, 1.2 nm, 1.5 nm, 1.8 nm, 2 nm, 2.5 nm, 3 nm, 3.5 nm, 4 nm, 4.5 nm, or 5 nm, or the thickness of the copper oxide interface layer can be between any two of the above thicknesses.

[0041] As an example of this embodiment, the copper oxide interface layer can be formed in situ on the surface of the copper metal substrate during the formation of the copper metal substrate. For example, the copper metal substrate can be formed by sputter deposition. During the deposition of the copper metal substrate, the thickness of the copper oxide interface layer can be controlled by adjusting the oxygen partial pressure in the sputtering chamber during a specific sputtering process. Specific sputtering conditions can be selected based on common knowledge in the art and the understanding of those skilled in the art, and will not be elaborated here.

[0042] As further examples of this embodiment, the copper oxide interface layer can also be obtained by annealing in an oxygen-containing environment after the copper metal substrate and the gallium oxide functional layer 110 are formed. During the annealing process, the temperature and the oxygen content in the annealing atmosphere can be controlled so that a copper oxide interface layer is formed at the interface between the copper metal substrate and the gallium oxide functional layer 110. Specific annealing temperatures and annealing atmospheres can be selected based on common knowledge in the art and the understanding of those skilled in the art, and will not be elaborated further here.

[0043] As an example of this embodiment, the thickness of the gallium oxide functional layer 110 can be 20 nm to 10 μm.

[0044] As an example of this embodiment, the gallium oxide functional layer 110 can be a crystalline gallium oxide-based thin film or an amorphous gallium oxide-based thin film. In this embodiment, an amorphous gallium oxide-based thin film can be used as the gallium oxide functional layer 110. Amorphous gallium oxide-based thin films can be prepared by sputtering or other methods, which are relatively simple to prepare and more suitable for large-area preparation. Furthermore, the preparation of amorphous gallium oxide-based thin films does not require high-temperature annealing, resulting in relatively lower temperature performance requirements for other structures in the device.

[0045] Reference Figure 1As shown, as an example of this embodiment, there are at least two metal electrodes, both of which are electrically in contact with the gallium oxide functional layer 110 and are insulated from each other. It can be understood that the two metal electrodes are used to connect to the positive and negative terminals of an external circuit, respectively, to facilitate the operation of the gallium oxide photodetector. The positions of the two metal electrodes can be selected based on the specific device structure. For example, the two metal electrodes can be disposed on the same side surface of the gallium oxide functional layer 110, or they can be disposed on different side surfaces of the gallium oxide functional layer 110.

[0046] In this embodiment, both metal electrodes may include a copper-containing metal substrate and a copper oxide interface layer attached to the surface of the copper-containing metal substrate. However, in other embodiments, only one metal electrode may include a copper-containing metal substrate and a copper oxide interface layer attached to the surface of the copper-containing metal substrate, while the other metal electrode may use other metals as electrode materials.

[0047] Reference Figure 1 As shown, as an example of this embodiment, the gallium oxide photodetector further includes a substrate 140, a gallium oxide functional layer 110 disposed on the substrate 140, the gallium oxide functional layer 110 having opposing top and bottom surfaces, the bottom surface being closer to the substrate 140 and the top surface being farther away from the substrate 140, and two metal electrodes being a first electrode 120 and a second electrode 130, respectively; wherein, the first electrode 120 is disposed in contact with the top surface of the gallium oxide functional layer 110, and the second electrode 130 is disposed in contact with the bottom surface of the gallium oxide functional layer 110. Here, the first electrode 120 can also be understood as the top electrode, and the second electrode 130 can also be understood as the bottom electrode.

[0048] Reference Figure 1 As shown, as an example of this embodiment, the gallium oxide photodetector further includes a first insulating layer 150. A portion of the first electrode 120 is disposed on the top surface of the gallium oxide functional layer 110, and another portion of the first electrode 120 is disposed on a region of the substrate 140 that does not have the gallium oxide functional layer 110. At least a portion of the first insulating layer 150 is disposed between the first electrode 120 and the substrate 140, and the first insulating layer 150 provides insulation between the first electrode 120 and the second electrode 130. It can be understood that the first insulating layer 150 is used to prevent short circuits between the first electrode 120 and the second electrode 130.

[0049] Reference Figure 1 As shown, as a further example of this embodiment, a first insulating layer 150 is also disposed between the first electrode 120 and the substrate 140, and is used to insulate the first electrode 120 and the substrate 140. It can be understood that the entire upper surface of the first electrode 120 can be exposed.

[0050] Reference Figure 1As shown, as an example of this embodiment, the gallium oxide photodetector further includes a second insulating layer 160. A portion of the second electrode 130 is disposed between the gallium oxide functional layer 110 and the substrate 140, and another portion of the second electrode 130 is disposed on a region of the substrate 140 that does not have the gallium oxide functional layer 110. The second insulating layer 160 is disposed on the second electrode 130, and the second insulating layer 160 has an opening that exposes a portion of the second electrode 130.

[0051] As an example of this embodiment, the materials of the first insulating layer 150 and the second insulating layer 160 may be the same or different.

[0052] As an example of this embodiment, the materials of the first insulating layer 150 and the second insulating layer 160 may be aluminum oxide.

[0053] As an example of this embodiment, the gallium oxide photodetector can be an ultraviolet detector or an X-ray detector.

[0054] As a further example of this embodiment, the thickness of the gallium oxide functional layer 110 can be selected according to the detection object of the gallium oxide photodetector.

[0055] For example, when the gallium oxide photodetector is an ultraviolet detector, the thickness of the gallium oxide functional layer 110 can be 20 nm to 2000 nm. Specifically, the thickness of the gallium oxide functional layer 110 can be 20 nm, 50 nm, 100 nm, 200 nm, 300 nm, 500 nm, 700 nm, 1000 nm, 1200 nm, 1500 nm, 1800 nm, or 2000 nm, or the thickness of the gallium oxide functional layer 110 can be between any two of the above thicknesses.

[0056] For example, when the gallium oxide photodetector is an X-ray detector, the thickness of the gallium oxide functional layer 110 can be 100 nm to 10 μm. For instance, the thickness of the gallium oxide functional layer 110 can be 100 nm, 200 nm, 500 nm, 800 nm, 1 μm, 2 μm, 3 μm, 4 μm, 5 μm, 7 μm, 9 μm, or 10 μm, or the thickness of the gallium oxide functional layer 110 can be between any two of the above thicknesses.

[0057] This application also tested Figure 1 The gallium oxide photodetector shown exhibits a periodic response to X-rays. (As shown...) Figure 2 This is the periodic response curve of a gallium oxide photodetector to X-rays. Figure 2 Example 1 is a gallium oxide photodetector using copper and a copper oxide interface layer as the metal electrode, while Comparative Example 1, as a control, is a gallium oxide photodetector using gold as the metal electrode. (Refer to...) Figure 2As shown, the horizontal axis represents time. During the initial 20 seconds without X-ray irradiation, the measured current is the dark current. The dark current of Example 1 is more than one order of magnitude lower than that of Comparative Example 1. After 20 seconds, X-rays are applied, and the measured current is the photocurrent. It can be observed that the photocurrent of Example 1 and Comparative Example 1 are essentially the same after the application of X-rays, and even when reaching a steady state, the photocurrent of Example 1 is only slightly lower than that of Comparative Example 1. Considering both the photocurrent and dark current of Example 1 and Comparative Example 1, it can be concluded that when receiving X-ray irradiation, the photocurrent-to-dark current ratio (i.e., the ratio of photocurrent to dark current) of Example 1 differs from that of Comparative Example 1 by more than one order of magnitude.

[0058] This application also tested the light-dark ratio obtained from tests conducted under different voltages in Example 1 and Comparative Example 1, and the results can be found in... Figure 3 , Figure 3 The horizontal axis in the graph represents voltage; a voltage less than 0 indicates that a reverse voltage has been applied. (Refer to...) Figure 3 As shown, when a voltage of <10V is applied, the light-to-dark ratio of Example 1 is significantly higher than that of Comparative Example 1. Furthermore, as the applied voltage increases, the difference in light-to-dark ratio between Example 1 and Comparative Example 1 gradually increases, and the difference can even reach more than an order of magnitude. This indicates that the structural design of the copper metal substrate and the copper oxide interface layer enables the gallium oxide photodetector to achieve a significantly higher light-to-dark ratio when detecting X-rays compared to the traditional method using gold as the electrode.

[0059] This application also tested Figure 1 The gallium oxide photodetector shown exhibits a periodic response to 254 nm ultraviolet light. For example... Figure 4 This is the periodic response curve of a gallium oxide photodetector to 254nm ultraviolet light. (Refer to...) Figure 4 As shown, no ultraviolet light irradiation was applied during the initial 20 seconds, and the current measured during this period was the dark current. The dark current of Example 1 was nearly two orders of magnitude lower than that of Comparative Example 1. After 20 seconds, ultraviolet light was applied, and the current measured at this time was the photocurrent. It can be observed that the photocurrent of Example 1 was slightly higher than that of Comparative Example 1. Considering both the photocurrent and dark current of Example 1 and Comparative Example 1, it can be seen that when receiving 254nm ultraviolet light irradiation, the difference in the photocurrent ratio between Example 1 and Comparative Example 1 can even reach approximately two orders of magnitude.

[0060] It is understandable that copper has a lower work function than gold, therefore theoretically the Schottky barrier formed by the contact between gold and gallium oxide would be higher, and the corresponding dark current would be lower. However, the above... Figures 2-4The results showed that the dark current of Example 1 was lower than that of Comparative Example 1, indicating that the copper oxide interface layer can be used to increase the interface barrier between the copper metal substrate and the gallium oxide functional layer 110, which is beneficial for significantly reducing the dark current of the device while ensuring that the photocurrent of the device does not change significantly. In addition, the material cost of the copper metal substrate is significantly lower, and the copper oxide interface layer can be obtained directly by oxidizing the copper metal substrate, which is more conducive to the industrial application of this gallium oxide photodetector.

[0061] This application also provides a gallium oxide photodetector with an alternative structure. Figure 5 This is a schematic diagram of the cross-sectional structure of another gallium oxide photodetector. (Refer to...) Figure 5 As shown, the gallium oxide photodetector includes a gallium oxide functional layer 210 and a metal electrode. The metal electrode is in electrical contact with the gallium oxide functional layer 210. The metal electrode includes a copper-containing metal substrate and a copper oxide interface layer attached to the surface of the copper-containing metal substrate. The copper oxide interface layer is disposed between the copper metal substrate and the gallium oxide functional layer 210. The gallium oxide photodetector also includes a substrate 240. The gallium oxide functional layer 210 is disposed on the substrate 240. The gallium oxide functional layer 210 has opposing top and bottom surfaces, with the bottom surface closer to the substrate 240 and the top surface further away from the substrate 240. The two metal electrodes are a first electrode 220 and a second electrode 230, respectively. Figure 1 The difference in the structure shown is that the first electrode 220 and the second electrode 230 are both disposed on the top surface of the gallium oxide functional layer 210, which can also realize the functions of detecting X-rays and detecting ultraviolet light.

[0062] This application also provides a gallium oxide photodetector with an alternative structure. Figure 6 This is a schematic diagram of the cross-sectional structure of another gallium oxide photodetector. (Refer to...) Figure 6 As shown, the gallium oxide photodetector includes a gallium oxide functional layer 310 and a metal electrode. The metal electrode is electrically contacted with the gallium oxide functional layer 310. The metal electrode includes a copper-containing metal substrate and a copper oxide interface layer attached to the surface of the copper-containing metal substrate. The copper oxide interface layer is disposed between the copper metal substrate and the gallium oxide functional layer 310. The gallium oxide photodetector also includes a substrate 340. The gallium oxide functional layer 310 is disposed on the substrate 340. The gallium oxide functional layer 310 has opposing top and bottom surfaces, with the bottom surface closer to the substrate 340 and the top surface further away from the substrate 340. The two metal electrodes are a first electrode 320 and a second electrode 330, respectively. Figure 1 The difference in the structure shown is that the first electrode 320 and the second electrode 330 are both disposed between the bottom surface of the gallium oxide functional layer 310 and the substrate 340, which can also realize the functions of detecting X-rays and detecting ultraviolet light.

[0063] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0064] The above embodiments only illustrate several implementation methods of this utility model, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. A gallium oxide photodetector, characterized in that, include: A gallium oxide functional layer and a metal electrode, wherein the metal electrode is in electrical contact with the gallium oxide functional layer, and the metal electrode includes a copper-containing metal substrate and a copper oxide interface layer attached to the surface of the copper-containing metal substrate, wherein the copper oxide interface layer is disposed between the copper metal substrate and the gallium oxide functional layer.

2. The gallium oxide photodetector according to claim 1, characterized in that, The copper metal substrate and the copper oxide interface layer are an integral structure.

3. The gallium oxide photodetector according to claim 1, characterized in that, The thickness of the copper oxide interface layer is ≤5nm.

4. The gallium oxide photodetector according to any one of claims 1 to 3, characterized in that, There are at least two metal electrodes, both of which are electrically in contact with the gallium oxide functional layer, and the two metal electrodes are insulated from each other.

5. The gallium oxide photodetector according to claim 4, characterized in that, The gallium oxide photodetector further includes a substrate, on which a gallium oxide functional layer is disposed. The gallium oxide functional layer has opposing top and bottom surfaces, with the bottom surface closer to the substrate and the top surface further away from the substrate. The two metal electrodes are a first electrode and a second electrode, respectively. The first electrode is disposed in contact with the top surface of the gallium oxide functional layer, and the second electrode is disposed in contact with the bottom surface of the gallium oxide functional layer.

6. The gallium oxide photodetector according to claim 5, characterized in that, The gallium oxide photodetector further includes a first insulating layer and / or a second insulating layer; A portion of the first electrode is disposed on the top surface of the gallium oxide functional layer, and another portion of the first electrode is disposed on a region of the substrate that does not have the gallium oxide functional layer. At least a portion of the first insulating layer is disposed between the first electrode and the substrate, and the first insulating layer insulatingly separates the first electrode and the second electrode. A portion of the second electrode is disposed between the gallium oxide functional layer and the substrate, and another portion of the second electrode is disposed on a region of the substrate that does not have the gallium oxide functional layer. The second insulating layer is disposed on the second electrode, and the second insulating layer has an opening that exposes a portion of the second electrode.

7. The gallium oxide photodetector according to claim 4, characterized in that, The gallium oxide photodetector further includes a substrate, on which a gallium oxide functional layer is disposed. The gallium oxide functional layer has opposing top and bottom surfaces, with the bottom surface closer to the substrate and the top surface further away from the substrate. The two metal electrodes are a first electrode and a second electrode, respectively. Both the first electrode and the second electrode are disposed on the top surface of the gallium oxide functional layer; or, Both the first electrode and the second electrode are disposed between the bottom surface of the gallium oxide functional layer and the substrate.

8. The gallium oxide photodetector according to any one of claims 1-3 and 5-7, characterized in that, The gallium oxide functional layer is an amorphous gallium oxide-based thin film or a crystalline gallium oxide-based thin film.

9. The gallium oxide photodetector according to any one of claims 1-3 and 5-7, characterized in that, The thickness of the gallium oxide functional layer is 20 nm to 10 μm.

10. The gallium oxide photodetector according to any one of claims 1-3 and 5-7, characterized in that, The gallium oxide photodetector is an ultraviolet detector or an X-ray detector.

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