Coating film etching device suitable for magnetron sputtering equipment

Abstract

The utility model discloses a coating etching device suitable for magnetron sputtering equipment, which belongs to the technical field of semiconductor manufacturing, and comprises a process chamber, a rotary reaction substrate group, a rotary driving motor, a target material, an electrode interface and an extraction opening, one side of the rotary reaction substrate group is provided with a rotary driving motor, the rotary driving motor drives the rotary reaction substrate group to rotate, and the target material is arranged above the process chamber; an electrode interface is mounted on the other side of the rotary reaction substrate group; and an extraction opening is formed in the bottom of the process chamber. By means of the mode, the coating efficiency can be effectively improved, contact between high-concentration plasma in the surrounding area of the target and a reaction sample is larger, particles in the cavity are controlled to do long-time and short-distance movement, then the collision probability between the particles and gas is increased, and sputtering is completed.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, specifically to a coating etching device suitable for magnetron sputtering equipment. Background Technology

[0002] Vacuum coating methods are broadly classified into two categories based on their deposition principles: Physical Vapor Deposition (PVD) and Chemical Vapor Deposition (CVD). Among these, magnetron sputtering equipment plays a crucial role in practical industrial production due to its high deposition rate and ease of operation. Commonly used magnetron sputtering methods in actual production include: planar target combination coating; star-shaped rotating coating; linear coating with a vertical target and a horizontal workpiece; and coating using a moving target device. These types of equipment may suffer from drawbacks such as cumbersome size and limitations on the size of the workpiece to be coated. Therefore, current research on rotating cylindrical structures is more in-depth.

[0003] Based on this, the present invention designs a coating etching device suitable for magnetron sputtering equipment to solve the above problems. Utility Model Content

[0004] In view of the above-mentioned shortcomings of the existing technology, the present invention provides a coating etching device suitable for magnetron sputtering equipment.

[0005] To achieve the above objectives, this utility model provides the following technical solution:

[0006] A coating etching apparatus suitable for magnetron sputtering equipment includes a process chamber, a rotating reactive substrate assembly, a rotating drive motor, a target material, an electrode interface, and an exhaust port. The rotating reactive substrate assembly is installed inside the process chamber. A rotating drive motor is installed on one side of the rotating reactive substrate assembly, driving the rotating reactive substrate assembly to rotate and positioning the target material above the process chamber. An electrode interface is installed on the other side of the rotating reactive substrate assembly. An exhaust port is installed at the bottom of the process chamber.

[0007] Furthermore, the rotating reaction substrate assembly includes a reaction substrate, a reaction sheet, a fixing frame, an electrode introduction structure, and an electrode lead-out structure. There are a total of 8 reaction substrates, which are arranged around the outer end of the fixing frame to form a cylindrical structure. The cylindrical structure is placed inside the process chamber. The electrode introduction structure is located on one side of the cylindrical structure and contacts the conductive L-shaped interface inside the process chamber. A related power supply structure is installed outside the chamber and acts on the sputtering coating reaction through the conductive L-shaped interface. The electrode lead-out structure is arranged and installed inside the rotating reaction substrate assembly.

[0008] Furthermore, the reaction substrate includes a process sample, a sample insulating shield cover, a ceramic carrier, a backplate support, and an electrode backplate. The backplate support is fixedly connected to the fixed frame, and the electrode backplate is connected to the electrode lead-out structure to realize the electrode function. The ceramic carrier is fixed to the backplate support, the process sample is installed on the ceramic carrier, and the sample insulating shield cover is placed on the outside of the reaction substrate.

[0009] Furthermore, the electrode introduction structure consists of an electrode introduction ring and an electrode insulating shield ring. The electrode introduction ring contacts the corresponding electrode assembly inside the cavity, and after contact, it can connect the electrode to perform subsequent etching work. The electrode insulating shield ring is located outside the electrode introduction ring.

[0010] Furthermore, the electrode lead-out structure is composed of a backplate shielding group, a conductive copper wire, an insulating corrugated tube, and an end shielding group. An insulating corrugated tube is installed on the outside of the conductive copper wire. One end of the conductive copper wire is fixedly connected to the reaction substrate. A backplate shielding group is installed on the outside of the conductive copper wire. An end shielding group is installed on the other end of the conductive copper wire. The conductive L-shaped interface is connected to the electrode lead-in ring to complete the circuit closure.

[0011] Furthermore, the backplate shielding assembly includes a first backplate sheet metal shielding component, a second backplate sheet metal shielding component, a first backplate ceramic shielding component, a second backplate ceramic shielding component, and a front-end copper wire sleeve. One end of the conductive copper wire is connected to the front-end copper wire sleeve, and the front-end copper wire sleeve is fixed in the first backplate ceramic shielding component and the second backplate ceramic shielding component. The first backplate sheet metal shielding component and the second backplate sheet metal shielding component are fixedly installed on the outside of the first backplate ceramic shielding component and the second backplate ceramic shielding component.

[0012] Furthermore, the end shielding assembly includes a top sheet metal shield, a first copper wire sleeve sheet metal shield, a second copper wire sleeve sheet metal shield, a first copper wire sleeve ceramic shield, a second copper wire sleeve ceramic shield, an end copper wire sleeve, an interface insulating shield, and a conductive L-shaped interface. The other end of the conductive copper wire needs to have an interface insulating shield installed outside the conductive L-shaped interface at the very end. An end copper wire sleeve is installed at the position of the end conductive copper wire. The end copper wire sleeve is fixed in the first copper wire sleeve ceramic shield and the second copper wire sleeve ceramic shield. At the same time, the first copper wire sleeve sheet metal shield and the second copper wire sleeve sheet metal shield are also installed outside the first copper wire sleeve ceramic shield and the second copper wire sleeve ceramic shield. The other end of the fixed insulating corrugated tube is fixedly installed with a top sheet metal shield.

[0013] Furthermore, the area between the adjacent backplate supports is an etched area.

[0014] Compared with the prior art, the advantages of this utility model are as follows: 1. The cylindrical structure adopted can effectively improve the coating efficiency compared with other structures such as planar structure. The high-concentration plasma in the area around the target material has greater contact with the reaction sample. By controlling the particles in the cavity to move over a long time and a short distance, the probability of collision with the gas is increased and sputtering is completed.

[0015] 2. By placing the target material on the side of the reaction area, the reaction substrate assembly can achieve intermittent coating and continuous etching when it rotates under the action of the rotary drive motor. By integrating coating and etching into the same mechanism, the sputtering process can be completed more efficiently, thereby improving production efficiency.

[0016] 3. The longitudinal rotation method adopted is more stable than other methods, and by adjusting the counterweight mechanism of the structure, the controllability of the process sample can be improved more efficiently, thereby improving the process efficiency. Attached Figure Description

[0017] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0018] Figure 1 This is a schematic diagram of the structural concept cavity of a coating etching device suitable for magnetron sputtering equipment according to this utility model;

[0019] Figure 2 This is a schematic cross-sectional view of the structural concept of a coating etching device suitable for magnetron sputtering equipment according to this utility model;

[0020] Figure 3 This is a schematic diagram of the overall structure inside the cavity;

[0021] Figure 4 This is a detailed schematic diagram of the front side of the reaction substrate;

[0022] Figure 5 For along Figure 4 A detailed schematic diagram of the cross-section of the reaction substrate with a portion cut away along the AA direction;

[0023] Figure 6 This is a schematic diagram of the back electrode lead-out mechanism of the reaction substrate.

[0024] Figure 7 A detailed schematic diagram of the etched area inside the structure;

[0025] Figure 8A detailed structural diagram of the components within the electrode lead-out mechanism.

[0026] The labels in the diagram represent:

[0027] 1. Process chamber; 2. Rotating reaction substrate assembly; 3. Rotation drive motor; 4. Target material; 5. Electrode interface; 6. Evacuation port; 21. Reaction substrate; 22. Reaction substrate; 23. Fixing frame; 24. Electrode introduction structure; 241. Electrode introduction ring; 242. Electrode insulating shielding ring; 221. Process sample; 222. Sample insulating shielding cover; 223. Ceramic carrier; 224. Backplate support; 225. Electrode backplate; 25. Electrode lead-out structure; 251. Backplate shielding assembly; 252. Conductive copper wire; 253. Insulating corrugated pipe; 254. End shielding assembly; 2511. First backplate sheet metal shielding component; 2512. Second backplate sheet metal shielding component; 2513. First backplate ceramic shielding component; 2514. Second backplate ceramic shielding component; 2515. Front copper wire sleeve; 2541. Top sheet metal shielding component; 2542. First copper wire sleeve sheet metal shielding component; 2543. Second copper wire sleeve sheet metal shielding component; 2544. First copper wire sleeve ceramic shielding component; 2545. Second copper wire sleeve ceramic shielding component; 2546. End copper wire sleeve; 2547. Interface insulating shielding component; 2548. Conductive L-shaped interface; 255. Etched area. Detailed Implementation

[0028] To make the objectives, technical solutions, and advantages of the embodiments of this utility model clearer, the technical solutions of the embodiments of this utility model will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this utility model. All other embodiments obtained by those skilled in the art based on the embodiments of this utility model without creative effort are within the scope of protection of this utility model.

[0029] In some embodiments, please refer to the accompanying drawings. Figures 1-8 A coating etching apparatus suitable for magnetron sputtering equipment includes a process chamber 1, a rotating reactive substrate assembly 2, a rotating drive motor 3, a target material 4, an electrode interface 5, and an exhaust port 6. The rotating reactive substrate assembly 2 is installed inside the process chamber 1. The rotating drive motor 3 is installed on one side of the rotating reactive substrate assembly 2, and the rotating drive motor 3 drives the rotating reactive substrate assembly 2 to rotate, thereby positioning the target material 4 above the process chamber 1. The electrode interface 5 is installed on the other side of the rotating reactive substrate assembly 2. An exhaust port 6 is installed at the bottom of the process chamber 1.

[0030] In this invention, during the rotation of the rotating reaction substrate assembly 2, the target material 4 can continuously and uniformly act on the surface of the reaction substrate 21, ensuring the reaction rate and the uniformity of the coating. The electrode interface 5 installed on the other side of the rotating reaction substrate assembly 2 can be connected to the power supply assembly outside the cavity to jointly complete the closed-loop path. Before the reaction starts, the vacuum port 6 installed at the bottom of the process chamber 1 first reduces the vacuum level in the process chamber 1 to the range required by the process. Only by ensuring the vacuum level in the process chamber 1 can subsequent coating reactions such as ion sputtering be carried out.

[0031] The rotating reactive substrate assembly 2 includes a reactive substrate 21, a reactive substrate 22, a fixing frame 23, an electrode introduction structure 24, and an electrode lead-out structure 25. There are eight reactive substrates 21, which are arranged around the outer end of the fixing frame 23 to form a cylindrical structure. The entire cylindrical structure is placed inside the process chamber 1. The electrode introduction structure 24 is located on one side of the cylindrical structure and contacts the conductive L-shaped interface 2548 inside the process chamber. A related power supply structure is installed outside the chamber and acts on the sputtering coating reaction through the conductive L-shaped interface 2548. The electrode lead-out structure 25 is arranged and installed inside the rotating reactive substrate assembly 2. The above structures together form the pathway for the overall etching work.

[0032] All metal components inside the cylindrical structure formed by the reactive substrate 22 must be equipped with corresponding insulating components.

[0033] The reaction substrate 22 includes a process sample 221, a sample insulating shielding cover 222, a ceramic carrier 223, a backplate support 224, and an electrode backplate 225. The backplate support 224 is fixedly connected to the fixed frame 23, and the electrode backplate 225 is connected to the electrode lead-out structure 25 to realize the electrode function. The ceramic carrier 223 is fixed to the backplate support 224, the process sample 221 is installed on the ceramic carrier 223, and the sample insulating shielding cover 222 is placed on the outside of the reaction substrate 22, mainly for the purpose of shielding.

[0034] The electrode introduction structure 24 is located on one side of the cylindrical structure and mainly consists of an electrode introduction ring 241 and an electrode insulating shield ring 242. The electrode introduction ring 241 contacts the corresponding electrode assembly in the cavity and can connect the electrode after contact to perform subsequent etching work. The electrode insulating shield ring 242 is located outside the electrode introduction ring 241 and is used to achieve the shielding function.

[0035] The electrode lead-out structure 25 is located inside the cylindrical structure and is mainly composed of a back plate shielding group 251, a conductive copper wire 252, an insulating corrugated tube 253, and an end shielding group 254. The insulating corrugated tube 253 is installed on the outside of the conductive copper wire 252. One end of the conductive copper wire 252 is fixedly connected to the reaction substrate 22. The back plate shielding group 251 is installed on the outside of the conductive copper wire 252. The end shielding group 254 is installed on the other end of the conductive copper wire 252. It is connected to the electrode lead-in ring 241 through the conductive L-shaped interface 2548 to complete the closure of the passage.

[0036] The area between adjacent backplate supports 224 is the etched area 255;

[0037] The backplate shielding assembly 251 includes a first backplate sheet metal shielding component 2511, a second backplate sheet metal shielding component 2512, a first backplate ceramic shielding component 2513, a second backplate ceramic shielding component 2514, and a front copper wire sleeve 2515. One end of a conductive copper wire 252 is connected to the front copper wire sleeve 2515. The front copper wire sleeve 2515 is fixed in the first backplate ceramic shielding component 2513 and the second backplate ceramic shielding component 2514. The first backplate sheet metal shielding component 2511 and the second backplate sheet metal shielding component 2512 are fixedly installed on the outside of the first backplate ceramic shielding component 2513 and the second backplate ceramic shielding component 2514. The first backplate sheet metal shielding component 2511 and the second backplate sheet metal shielding component 2512 are used to fix the insulating corrugated pipe 253. The installation of the above insulating components can achieve shielding between metal parts.

[0038] The end shielding assembly 254 includes a top sheet metal shielding component 2541, a first copper wire sleeve sheet metal shielding component 2542, a second copper wire sleeve sheet metal shielding component 2543, a first copper wire sleeve ceramic shielding component 2544, a second copper wire sleeve ceramic shielding component 2545, an end copper wire sleeve 2546, an interface insulating shielding component 2547, and a conductive L-shaped interface 2548. The other end of the conductive copper wire 252 needs to have an interface insulating shielding component 2547 installed outside the conductive L-shaped interface 2548 at the very end. An end copper wire sleeve 2546 is installed at the position of the end conductive copper wire 252, and the end copper wire sleeve 2546 is fixed to the first... In the first copper wire sleeve ceramic shield 2544 and the second copper wire sleeve ceramic shield 2545, the first copper wire sleeve sheet metal shield 2542 and the second copper wire sleeve sheet metal shield 2543 are also installed on the outside of the first copper wire sleeve ceramic shield 2544 and the second copper wire sleeve sheet metal shield 2545. The other end of the fixed insulating corrugated tube 253 is fixedly installed with a top sheet metal shield 2541; the top sheet metal shield 2541 is used to fix the other end of the insulating corrugated tube 253; all ceramic shields need to be installed with sheet metal shields of matching size, so as to maximize conductive shielding and ensure coating efficiency.

[0039] In this invention, the entire mechanism is placed longitudinally within the vacuum process chamber 1. This longitudinal rotation method can greatly improve the stability of rotation and the uniformity of the reaction process. The mechanism innovatively combines the magnetron sputtering process with the etching process, which can more efficiently improve the controllability of the process sample 221 and improve the process efficiency.

[0040] The mechanism employs a cylindrical structure, allowing the reaction substrate 21 to rotate longitudinally and the target 4 to be positioned above the process chamber 1. During the rotation of the rotating reaction substrate 21 for film deposition, the target 4 continuously and uniformly acts on the surface of the reaction substrate 21. Since uneven deposition may occur during the deposition process, the continuous etching process within the etching region 255 allows for real-time adjustments to the deposition process, ensuring uniformity and repeatability. Simultaneously, this structure maintains the magnetic field strength and distribution unchanged, thereby improving the utilization rate of the target 4 and the stability and uniformity of the deposited material. This allows for cost reduction while ensuring high yield and performance of the deposition.

[0041] The above embodiments are only used to illustrate the technical solutions of this utility model, and are not intended to limit it. Although this utility model has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features. Such modifications or substitutions will not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of this utility model.

Claims

1. A coating etching apparatus suitable for magnetron sputtering equipment, comprising a process chamber (1), characterized in that: It also includes a rotating reaction substrate assembly (2), a rotating drive motor (3), a target material (4), an electrode interface (5), and an exhaust port (6). The rotating reaction substrate assembly (2) is installed inside the process chamber (1). A rotating drive motor (3) is installed on one side of the rotating reaction substrate assembly (2). The rotating drive motor (3) drives the rotating reaction substrate assembly (2) to rotate and places the target material (4) above the process chamber (1). An electrode interface (5) is installed on the other side of the rotating reaction substrate assembly (2). An exhaust port (6) is installed at the bottom of the process chamber (1).

2. The coating etching apparatus for magnetron sputtering equipment according to claim 1, characterized in that, The rotating reaction substrate assembly (2) includes a reaction substrate (21), a reaction substrate (22), a fixed frame (23), an electrode introduction structure (24), and an electrode lead-out structure (25). There are a total of 8 reaction substrates (21), which are arranged around the outer end of the fixed frame (23) and form a cylindrical structure. The cylindrical structure is placed inside the process chamber (1). The electrode introduction structure (24) is located on one side of the cylindrical structure and is in contact with the conductive L-shaped interface (2548) inside the process chamber. A related power supply structure is installed outside the chamber and acts on the sputtering coating reaction through the conductive L-shaped interface (2548). The electrode lead-out structure (25) is arranged and installed inside the rotating reaction substrate assembly (2).

3. The coating etching apparatus for magnetron sputtering equipment according to claim 2, characterized in that, The reaction substrate (22) includes a process sample (221), a sample insulating shield cover (222), a ceramic carrier (223), a backplate support (224), and an electrode backplate (225). The backplate support (224) is fixedly connected to the fixed frame (23), and the electrode backplate (225) is connected to the electrode lead-out structure (25) to realize the electrode function connection and realization. The ceramic carrier (223) is fixed to the backplate support (224), the process sample (221) is installed at the ceramic carrier (223), and the sample insulating shield cover (222) is placed on the outside of the reaction substrate (22).

4. The coating etching apparatus for magnetron sputtering equipment according to claim 3, characterized in that, The electrode introduction structure (24) consists of an electrode introduction ring (241) and an electrode insulating shield ring (242). The electrode introduction ring (241) contacts the corresponding electrode assembly in the cavity. After contact, it can connect the electrode and perform subsequent etching work. The electrode insulating shield ring (242) is located outside the electrode introduction ring (241).

5. The coating etching apparatus for magnetron sputtering equipment according to claim 4, characterized in that, The electrode lead-out structure (25) is composed of a back plate shielding group (251), a conductive copper wire (252), an insulating corrugated tube (253), and an end shielding group (254). The conductive copper wire (252) is fitted with an insulating corrugated tube (253). One end of the conductive copper wire (252) is fixedly connected to the reaction substrate (22). The back plate shielding group (251) is fitted to the outside of the conductive copper wire (252). The other end of the conductive copper wire (252) is fitted with an end shielding group (254). The conductive copper wire (252) is connected to the electrode lead-out ring (241) through a conductive L-shaped interface (2548) to complete the closure of the passage.

6. The coating etching apparatus for magnetron sputtering equipment according to claim 5, characterized in that, The backplate shielding assembly (251) includes a first backplate sheet metal shielding component (2511), a second backplate sheet metal shielding component (2512), a first backplate ceramic shielding component (2513), a second backplate ceramic shielding component (2514), and a front copper wire sleeve (2515). One end of a conductive copper wire (252) is connected to the front copper wire sleeve (2515). The front copper wire sleeve (2515) is fixed in the first backplate ceramic shielding component (2513) and the second backplate ceramic shielding component (2514). The first backplate sheet metal shielding component (2511) and the second backplate sheet metal shielding component (2512) are fixedly installed on the outside of the first backplate ceramic shielding component (2513) and the second backplate ceramic shielding component (2514).

7. The coating etching apparatus for magnetron sputtering equipment according to claim 6, characterized in that, The end shielding assembly (254) includes a top sheet metal shield (2541), a first copper wire sleeve sheet metal shield (2542), a second copper wire sleeve sheet metal shield (2543), a first copper wire sleeve ceramic shield (2544), a second copper wire sleeve ceramic shield (2545), an end copper wire sleeve (2546), an interface insulating shield (2547), and a conductive L-shaped interface (2548). The other end of the conductive copper wire (252) requires an interface insulating shield (2547) to be installed outside the conductive L-shaped interface (2548) at the very end. A terminal copper wire sleeve (2546) is installed at the position of the conductive copper wire (252). The terminal copper wire sleeve (2546) is fixed in the first copper wire sleeve ceramic shield (2544) and the second copper wire sleeve ceramic shield (2545). At the same time, the first copper wire sleeve sheet metal shield (2542) and the second copper wire sleeve sheet metal shield (2543) are also installed on the outside of the first copper wire sleeve ceramic shield (2544) and the second copper wire sleeve ceramic shield (2545). A top sheet metal shield (2541) is fixedly installed at the other end of the fixed insulating corrugated tube (253).

8. The coating etching apparatus for magnetron sputtering equipment according to claim 3, characterized in that, The area between adjacent backplate supports (224) is the etched area (255).

Images