Electrostatic field intensity measurement equipment and detection equipment

Abstract

The utility model provides an electrostatic field intensity measuring device and an electrostatic field intensity detecting device. The electrostatic field intensity measuring device comprises an electrostatic field detecting device and a processor. The electrostatic field detection device includes an annular light source configured to emit a light signal to a target and a reflection detector disposed within and surrounded by the annular light source. The reflection detector is configured to receive a reflected signal of the optical signal reflected by a surface of the target object, and generate an electrical signal based on the reflected signal. A processor is configured to determine a measurement of electrostatic field intensity at the surface of the target based on the electrical signal.

Description

Technical Field

[0001] This utility model relates to an electrostatic field strength measuring device and a testing device. Background Technology

[0002] Semiconductor devices are formed on, in, and / or from semiconductor wafers and are used in a variety of electronic devices, such as mobile phones, laptops, desktop computers, tablets, watches, gaming systems, and various other industrial, commercial, and consumer electronics. Semiconductor manufacturing uses one or more components to form semiconductor devices on, in, and / or from semiconductor wafers. Utility Model Content

[0003] According to some embodiments of this disclosure, an electrostatic field strength measuring device includes an electrostatic field detection device and a processor. The electrostatic field detection device includes a ring light source configured to emit an optical signal to a target object and a reflection detector disposed within and surrounded by the ring light source. The reflection detector is configured to receive a reflected signal of the optical signal reflected from the surface of the target object and to generate an electrical signal based on the reflected signal. The processor is configured to determine a measured value of the electrostatic field strength at the surface of the target object based on the electrical signal.

[0004] According to some embodiments of this disclosure, a detection device includes a ring light source and a reflection detector. The ring light source includes a plurality of first photodiodes configured to emit a first light signal having a first wavelength to a target object and a plurality of second photodiodes configured to emit a second light signal having a second wavelength to the target object. The reflection detector is disposed within and surrounded by the ring light source, and is configured to receive a first reflected signal of the first light signal reflected from the surface of the target object and a second reflected signal of the second light signal, and generate a first electrical signal and a second electrical signal based on the first reflected signal and the second reflected signal, respectively.

[0005] To make the above-mentioned features and advantages of this utility model more apparent and understandable, specific embodiments are described below, and detailed descriptions are provided in conjunction with the accompanying drawings. Attached Figure Description

[0006] The various aspects of this disclosure are best understood from the following detailed description when read in conjunction with the accompanying drawings. It should be noted that, in accordance with industry standard practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of explanation.

[0007] Figure 1 A schematic diagram of a device according to some embodiments is shown.

[0008] Figure 2A perspective view of a device according to some embodiments is shown.

[0009] Figure 3 A schematic diagram of a device according to some embodiments is shown.

[0010] Figure 4 A partial enlarged view of the device according to some embodiments is shown.

[0011] Figure 5 A partial enlarged view of the device according to some embodiments is shown.

[0012] Figure 6 A perspective view of the target object according to some embodiments is shown.

[0013] Figure 7 A visual image of a target object generated by the image sensor of a device according to some embodiments is shown.

[0014] Figure 8 A representation of multiple pixel colors determined based on multiple electrostatic field strength measurements is shown according to some embodiments.

[0015] Figure 9 A map showing the electrostatic field strength generated by the device according to some embodiments is shown.

[0016] Figure 10 A perspective view of a device and an object according to some embodiments is shown.

[0017] Figure 11 A perspective view of a device and an object according to some embodiments is shown.

[0018] Figure 12 A perspective view of a device and an object according to some embodiments is shown.

[0019] Figure 13 A map showing the electrostatic field strength generated by the device according to some embodiments is shown.

[0020] Figure 14 A schematic diagram of a system according to some embodiments is shown.

[0021] Figure 15 An electrostatic information display system for displaying electrostatic event information is shown according to some embodiments.

[0022] Figure 16 This is a flowchart illustrating a method according to some embodiments.

[0023] Explanation of reference numerals in the attached figures

[0024] 101: Detection Device

[0025] 102: Equipment

[0026] 104: Target

[0027] 106: Surface

[0028] 108: Optical signals, laser signals

[0029] 108a: First optical signal, first laser signal, optical signal

[0030] 108b: Second optical signal, second laser signal, optical signal

[0031] 116: Ring Light Source

[0032] 1161: Photodiode, First Photodiode

[0033] 1162: Photodiode, Second Photodiode

[0034] 118: Reflected signal

[0035] 118a: First reflected signal, reflected signal

[0036] 118b: Second reflected signal, reflected signal

[0037] 120, 120a, 120b: First harmonic light

[0038] 122, 122a, 122b: Second harmonic light

[0039] 124: Reflection Detector

[0040] 128: Define wavelength range

[0041] 128a: First defined wavelength range, defined wavelength range

[0042] 128b: Second definition of wavelength range, defining wavelength range

[0043] 130: Focal lens, lens

[0044] 132: Polarizing lens, lens

[0045] 134: Filter

[0046] 134a: First filter, filter

[0047] 134b: Second filter, filter

[0048] 135a: First optical sensor

[0049] 135b: Second optical sensor

[0050] 136: Light sensor

[0051] 138: Photodiode Array

[0052] 140: Processor

[0053] 142: Monitor

[0054] 204: First valve, first component

[0055] 206: Second valve, second component

[0056] 208: Pipe

[0057] 210: Fluid

[0058] 220: Visual Images

[0059] 230: indicates

[0060] 240, 432: Electrostatic field strength images

[0061] 242: The First Static Electricity Incident

[0062] 244: The Second Static Electricity Event

[0063] 304: Semiconductor Processing Room

[0064] 306: Target

[0065] 308: Window

[0066] 310: Semiconductor wafers

[0067] 312: Chip support component

[0068] 314: Plasma

[0069] 404, 408, 410: Pipes

[0070] 414: Valve distribution box

[0071] 418, 420, 422, 424: Instruments

[0072] 428: The Third Static Electricity Incident

[0073] 430: The Fourth Electrostatic Event

[0074] 500: System

[0075] 501: Moving Device

[0076] 502: Venue Equipment

[0077] 506: Electrostatic Information Display System

[0078] 508: Client Device

[0079] 510: First Signal

[0080] 512: Electrostatic field signal

[0081] 514: Controller

[0082] 516: The Third Signal

[0083] 518: Second Signal

[0084] 520: Status Indicator

[0085] 602: Monitor

[0086] 604: First Alert

[0087] 606: Second Alert

[0088] 610, 612, 614, 616: Instructions

[0089] w1, w2, w3, w1', w2': Wavelength Detailed Implementation

[0090] The following disclosure provides several different embodiments or instances for implementing various features of the provided subject matter. Specific examples of elements and arrangements are described below to simplify this disclosure. Of course, these elements and arrangements are merely examples and are not intended to be limiting. For example, in the following description, the formation of a first feature over or on a second feature may include embodiments where the first and second features are formed in direct contact, and may further include embodiments where additional features may be formed between the first and second features such that the first and second features are not in direct contact. Additionally, reference numerals and / or letters may be repeated in various instances of this disclosure. Such repetition is for simplicity and clarity and does not in itself indicate a relationship between the various embodiments and / or configurations discussed.

[0091] Furthermore, for ease of description, spatially related terms such as “below,” “under,” “lower,” “above,” and “upper” may be used herein to describe the relationship between one element or feature and another, as shown in the figures. In addition to the orientations depicted in the figures, spatially related terms are intended to cover different orientations of the device during use or operation. The device may be oriented in other ways (rotated 90 degrees or in other orientations), and the spatially relative descriptive terms used herein shall be interpreted accordingly.

[0092] According to some embodiments, the detecting apparatus includes a ring light source and a reflection detector. The ring light source is arranged in a ring around the reflection detector and is configured to emit an optical signal to a target object. The reflection detector is configured to receive a reflected signal, which includes light from an optical signal reflected by the surface of the target object. The light from the reflected signal generates one or more additional harmonics in the reflected signal, for example, at least in part, due to the generation of a second harmonic that occurs when the optical signal is reflected by the surface. Therefore, the reflected signal includes a first harmonic light having the original wavelength of the optical signal generated by the ring light source and a second harmonic light having a wavelength approximately half that of the original wavelength. The intensity of the second harmonic light within the reflected signal reflects the electrostatic field strength of the target object surface. In some embodiments, an increase in the intensity of the second harmonic light reflects a higher value of the electrostatic field strength at the surface.

[0093] In some embodiments, the ring light source includes a plurality of first photodiodes and a plurality of second photodiodes. The first photodiodes are configured to emit a first optical signal having a first wavelength to a target object, and the second photodiodes are configured to emit a second optical signal having a second wavelength to the target object. The second wavelength is different from the first wavelength. Accordingly, a reflection detector is configured to receive a first reflection signal reflected from the surface of the target object and a second reflection signal reflected from the surface of the target object, thereby obtaining the electrostatic field strength of the two different materials on the surface of the target object.

[0094] In some embodiments, the reflection detector includes a filter that filters the reflected signal to provide filtered light, including second harmonic light, to the optical sensor. In some embodiments, the filter filters the reflected signal by blocking light other than the second harmonic light. The optical sensor generates an electrical signal based on the filtered light. The electrical signal is an indication of the intensity of the filtered light. In some embodiments, the intensity of the filtered light is approximately equal to the intensity of the second harmonic light in the reflected signal, for example, at least in part attributable to light other than the second harmonic light that is filtered out of the filtered light by the filter. The processor determines a measurement of the electrostatic field strength of this surface based on the electrical signal. In some embodiments, the electrostatic field strength map is generated based on the measurement of the electrostatic field strength.

[0095] In some embodiments, the processor is configured to detect electrostatic events at a target object (e.g., a semiconductor manufacturing device) using at least one of an electrostatic field strength map or an electrostatic field strength measurement. In some embodiments, an electrostatic event corresponds to at least one of static charge accumulation, an electrostatic hotspot, or a potential electrostatic discharge (ESD) event at the semiconductor manufacturing device.

[0096] Figure 1A schematic diagram of an apparatus according to some embodiments is shown. In some embodiments, apparatus 102 is configured to determine a measurement of a feature of target 104. For example, in this embodiment, apparatus 102 is an electrostatic field strength measuring device configured to determine a measurement of the electrostatic field strength at surface 106 of target 104. In some embodiments, target 104 includes a semiconductor manufacturing element, such as at least one of the following: (i) a physical vapor deposition (PVD) apparatus, such as a plasma-enhanced PVD apparatus, (ii) a chemical vapor deposition (CVD) apparatus, (iii) an electroplating apparatus, (iv) an etching apparatus, such as at least one of a plasma etching apparatus, a wet etching apparatus, or a dry etching apparatus, (v) a photolithography apparatus, (vi) a chemical mechanical planarization (CMP) apparatus, and (vii) a semiconductor wafer storage apparatus, such as a front-opening unified wafer cassette. (viii) a plasma-utilizing element, (ix) a tube, such as a pipe, an insulating tube, or at least one other type of tube configured to conduct a fluid comprising at least one of liquid or gas, (x) a manifold, (xi) a fluid storage device configured to store a fluid comprising at least one of liquid or gas, (xii) a process chamber, (xiii) a pump, (xiv) a robotic arm, (xv) one or more storage devices, (xvi) one or more management devices, (xvii) one or more handling devices, (xviii) a detection device, (xix) an automated material handling system, (xx) an automated transport system, (xxi) a lorry tank, (xxii) a mask, (xxiii) a mask box, or (xxiv) other equipment. In some embodiments, the measured value of the electrostatic field strength determined by device 102 corresponds to at least one of electrostatic charge accumulation, voltage level 126, measured value of electrostatic field strength amplitude, or other measured values. In other embodiments, device 102 may also be used to determine measurements of other features, such as the size of the surface 106 of the target 104 or the distance from the reflection detector 124 to the surface 106 of the target 104. This disclosure does not limit the application of device 102.

[0097] In some embodiments, device 102 includes a ring light source 116 configured to emit an optical signal 108 to a target object 104. In some embodiments, the ring light source 116 includes a plurality of photodiodes 1161, such as injection light diodes, laser diodes, light-emitting diodes, or other light-emitting devices. In one embodiment, the ring light source 116 is a ring-shaped laser light source and is configured to emit the laser signal 108 towards the target object 104. The laser signal 108 includes at least one of a series of laser pulses or a continuous laser pulse. However, this disclosure is not limited thereto. In some embodiments, the ring light source 116 performs a laser scanning cycle in which the ring light source 116 scans across the target object 104 in at least one direction, either horizontal or vertical, using the optical signal 108. In some embodiments, during a scanning cycle performed using the ring light source 116, the optical signal 108 strikes multiple points on the surface 106 of the target object 104. The duration of the scanning cycle performed by the ring light source 116 is between about 1 microsecond and about 1 second. Other values ​​for the duration also fall within the scope of this disclosure.

[0098] Figure 2 A perspective view of a device according to some embodiments is shown. Please refer to... Figure 1 and Figure 2 In some embodiments, the ring light source 116 is ring-shaped and surrounds the reflection detector 124. Specifically, the ring light source 116 includes a plurality of photodiodes 1161 uniformly distributed on the ring light source 116, such that the reflection detector 124 is surrounded by the photodiodes 1161. In one embodiment, the photodiodes 1161 may be laser diodes or the like. Therefore, the light signal 108 emitted by the photodiodes 1161 can strike the surface 106 of the target object 104 more uniformly, and the reflected signal reflected by the surface 106 of the target object 104 can be received more uniformly by the reflection detector 124.

[0099] In some embodiments, device 102 includes a reflection detector 124 disposed within and surrounded by a ring light source 116, and the reflection detector 124 is configured to receive a reflected signal 118 comprising light reflected from the surface 106 of a target object 104, including light from an optical signal 108. In one embodiment, the reflected signal 118 includes a first harmonic light 120 "ω" and a second harmonic light 122 "2ω". The second harmonic light 122 is generated via second-harmonic generation (also known as frequency doubling), which occurs when light from the optical signal 108 is reflected from the surface 106 of the target object 104. As a result of the second harmonic generation, two photons of the light from the optical signal 108 combine to produce a new photon in the reflected signal 118 with approximately twice the energy, approximately twice the frequency, and approximately half the wavelength of the two photons. Therefore, the reflected wavelength of the second harmonic light 122 in the reflected signal 118 is approximately half the (initial) wavelength of the first harmonic light 120 in the reflected signal 118.

[0100] In some embodiments, the reflection detector 124 may further include at least one light sensor 136, a filter 134, or one or more lenses. One or more lenses are configured to conduct the reflected signal 118 to the filter 134. In some embodiments, the one or more lenses include at least one of a focal lens 130, a polarizing lens 132, or one or more other lenses. In some embodiments, the focal lens 130 is configured to direct light incident on the focal lens 130 toward at least one of the polarizing lens 132 or the filter 134. In some embodiments, implementing the reflection detector 124 through the focal lens 130 allows more light from the reflected signal 118 to reach at least one of the filter 134 or the light sensor 136, thereby improving the accuracy of the signal generated by the light sensor 136, compared to embodiments without the focal lens 130. In some embodiments, the polarizing lens 132 is configured to optically polarize photons striking the polarizing lens 132 and conduct the polarized photons to the filter 134. In some embodiments, implementing the reflection detector 124 with the polarizing lens 132 provides higher resolution of the signal generated by the optical sensor 136 compared to embodiments without the polarizing lens 132.

[0101] In some embodiments, filter 134 includes at least one of a bandpass filter or other types of filter. Filter 134 is configured to block light having wavelengths outside the defined wavelength range 128 and to provide filtered light from the reflected signal 118 having wavelengths within the defined wavelength range 128. Therefore, light having wavelengths outside the defined wavelength range 128 is at least absorbed, filtered, or not transmitted to at least one of the photosensitive sensors 136, while light having wavelengths within the defined wavelength range 128 passes through filter 134 to reach photosensitive sensor 136. The defined wavelength range 128 extends from wavelength w1 to wavelength w2. Therefore, light with wavelengths less than wavelength w1 or greater than wavelength w2 is blocked by filter 134.

[0102] In some embodiments, the defined wavelength range 128 includes a wavelength w3, which is equal to half the wavelength of the optical signal 108 generated by the ring light source 116. The wavelength of the optical signal 108 is equal to the wavelength of the first harmonic light 120 of the reflected signal 118. Therefore, the second harmonic light 122, whose wavelength w3 is equal to half the wavelength of the optical signal, passes through the filter 134 to the photosensor 136. In some embodiments, the wavelength w2 corresponding to the upper limit of the defined wavelength range 128 is smaller than the wavelength of the optical signal. Therefore, the first harmonic light 120 in the reflected signal 118 is blocked by the filter 134 and does not transmit to the photosensor 136. In some embodiments, the wavelength w1 corresponding to the lower limit of the defined wavelength range 128 is greater than half the wavelength w3, such that the filter 134 blocks at least one of the third harmonic light, fourth harmonic light, etc., in the reflected signal 118.

[0103] In some embodiments, for example, the wavelength of the optical signal 108 is approximately 850 nanometers, therefore the wavelength w3 of the second harmonic light 122 is approximately 425 nanometers. In some embodiments, the wavelength w2 corresponding to the upper limit of the defined wavelength range 128 is equal to a value greater than 425 nanometers and less than 850 nanometers. In some embodiments, the wavelength w1 corresponding to the lower limit of the defined wavelength range 128 is equal to a value greater than 212.5 nanometers and less than 425 nanometers. Other values ​​for the optical signal wavelength, wavelengths w1, w2, and w3 are also within the scope of this disclosure.

[0104] Therefore, according to some embodiments herein, filter 134 provides second harmonic light 122 to optical sensor 136 while preventing at least one of the first harmonic light 120 or other harmonics from reaching optical sensor 136. Other configurations of filter 134 are also within the scope of this disclosure.

[0105] Therefore, the light sensor 136 is configured to generate an electrical signal based on the filtered light provided by the filter 134. In some embodiments, the electrical signal is an indication of a measurement of the intensity of the filtered light. In some embodiments, the measurement of the intensity of the filtered light corresponds to a measurement of the intensity of the second harmonic light 122, for example, at least in part due to the filtered light including the second harmonic light 122 and light 122 other than the second harmonic light filtered out from the filtered light by the filter 134. In some embodiments, the light sensor 136 includes a photodiode array 138. The photodiodes in the photodiode array 138 are configured to generate a current for the electrical signal, wherein the amount of current generated by the photodiode depends on the amount of photons reaching the photodiode. The photons are sensed, detected, or converted into electrons by the photodiodes. In some embodiments, the electrical signal generated by the light sensor 136 indicates a higher measurement of the intensity of the filtered light by at least one of a higher voltage or a higher current. In some embodiments, the ring light source 116 and the reflection detector 124 are integrated into a detection device 101 for detecting the electrostatic field strength. That is, the detection device 101 may be an electrostatic field detection device.

[0106] In some embodiments, device 102 includes processor 140 configured to determine multiple measurements of the electrostatic field strength of the surface 106 of target object 104 based on electrical signals generated by light sensor 136. In some embodiments, one of the multiple measurements of electrostatic field strength corresponds to at least one of static charge accumulation, voltage level, electrostatic field strength amplitude, or other measurements.

[0107] In some embodiments, multiple measurements of the electrostatic field strength are associated with multiple points or regions on the surface 106 of the target object 104. A first measurement of the electrostatic field strength is associated with a first point or region on the surface 106 and corresponds to at least one of the electrostatic charge accumulation measurements associated with the first point or region, a voltage level associated with the first point or region, an electrostatic field strength amplitude associated with the first point or region, or other measurements associated with the first point or region. A second measurement of the electrostatic field strength is associated with a second point or region on the surface 106 and corresponds to at least one of the electrostatic charge accumulation measurements associated with the second point or region, a voltage level associated with the second point or region, an electrostatic field strength amplitude associated with the second point or region, or other measurements associated with the second point or region.

[0108] In some embodiments, multiple measurements of the electrostatic field strength are associated with a scanning cycle in which the ring light source 116 scans multiple points or regions of the surface 106 of the target object 104 with an optical signal 108. At least one of the following is provided: a first measurement of the electrostatic field strength based on reflection of the optical signal 108 at a first point or region; a second measurement of the electrostatic field strength based on reflection of the optical signal 108 at a second point or region during the scanning cycle.

[0109] In some embodiments, a first measurement of the electrostatic field strength is generated based on a first measurement of the intensity indicated by an electrical signal generated by the light sensor 136. The first measurement of intensity is generated based on filtered light filtered from a first light of a reflected signal 118 by a filter 134, wherein the first light of the reflected signal 118 includes light of a light signal 108 reflected from a first point or region on the surface 106 of the target object 104. In some embodiments, the processor 140 uses the first measurement of intensity to perform one or more operations, such as one or more mathematical operations, to determine the first measurement of the electrostatic field strength. The first measurement of the electrostatic field strength is a function of at least one of the first measurement of intensity, the distance between the reflection detection device 124 and the first point or region on the surface 106, or other values.

[0110] In some embodiments, a second measurement of the electrostatic field strength is generated based on a second measurement of the intensity indicated by an electrical signal generated by the light sensor 136. The second measurement of intensity is generated based on filtered light filtered from a second light of a reflected signal 118 by a filter 134, wherein the second light of the reflected signal 118 includes light of a light signal 108 reflected from a second point or region on the surface 106 of the target object 104. In some embodiments, the processor 140 uses the second measurement of intensity to perform one or more operations, such as one or more mathematical operations, to determine the second measurement of the electrostatic field strength. The second measurement of the electrostatic field strength is a function of at least one of the second measurement of intensity, the distance between the reflection detector 124 and the second point or region on the surface 106, or other values.

[0111] Figure 3 A schematic diagram of a device according to some embodiments is shown. Figure 4 A partial enlarged view of the device according to some embodiments is shown. Figures 3 to 5 The ring light source 116 shown includes many features that are the same as or similar to those disclosed in the previous embodiments. For clarity and simplicity, detailed descriptions of the same or similar features may be omitted, and the same or similar reference numerals denote the same or similar elements. Please also refer to... Figure 3 and Figure 4In this embodiment, the ring light source 116 includes a plurality of first photodiodes 1161 and a plurality of second photodiodes 1162. The first photodiodes 1161 are configured to emit a first optical signal 108a with a first wavelength to the target object 104, and the second photodiodes 1162 are configured to emit a second optical signal 108b with a second wavelength to the target object 104. The first wavelength of the first optical signal 108a and the second wavelength of the second optical signal 108b are different, used to detect the electrostatic field strength of different materials at the surface 106 of the target object 104. In this embodiment, the ring light source 116 is a ring laser source. Therefore, the first photodiodes 1161 are laser diodes configured to emit the first laser signal 108a with a first wavelength, and the second photodiodes 1162 are laser diodes configured to emit the second laser signal 108b with a second wavelength. However, this disclosure is not limited thereto. In other embodiments, the ring light source 116 may be a laser light source, a radio wave light source, an ultraviolet light source, a visible light source, a near-infrared light source, an ultrasonic light source, etc. The ring light source 116 can use LiDAR (Light Detection and Ranging), radar, or ultrasound to measure the characteristics of the surface of the target object 104. These characteristics include the electrostatic field strength at the surface 106 of the target object 104, the size of the surface 106 of the target object 104, or the distance from the reflection detector 124 to the surface 106 of the target object 104. The reflection detector 124 is located within and surrounded by the ring light source 116, and is configured to receive a first reflected signal 118a of a first optical signal 108a and a second reflected signal 118b of a second optical signal 108b, which are reflected by the surface 106 of the target object 104, and generate a first electrical signal and a second electrical signal based on the first reflected signal 118a and the second reflected signal 118b, respectively.

[0112] In some embodiments, the power of the first optical signal 108a emitted by the first photodiode 1161 is approximately equal to the power of the second optical signal 108b emitted by the second photodiode 1162, such that the optical signals 108a and 108b strike the surface 106 of the target object 104 at approximately the same rate, and the filtered light reaching the photosensor 136 from the reflected signals 108a and 108b is approximately the same. In one embodiment, the number of first photodiodes 1161 is equal to the number of second photodiodes 1162. See also Figure 3 and Figure 4In this embodiment, the first photodiode 1161 and the second photodiode 1162 are alternately arranged around the ring light source 116. Specifically, the first photodiode 1161 is arranged radially in multiple columns, and the second photodiode 1162 is also arranged radially in multiple columns. The columns of the first photodiode 1161 and the columns of the second photodiode 1162 are alternately arranged around the ring light source 116. Therefore, the first photodiode 1161 and the second photodiode 1162 are uniformly distributed on the ring light source 116, and the power (total) of the first optical signal 108a emitted by the first photodiode 1161 is equal to the power (total) of the second optical signal 108b emitted by the second photodiode 1162.

[0113] See Figure 3 and Figure 5 In this embodiment, the first photodiode 1161 is configured as multiple rings surrounding the central reflection detector 124 of the ring light source 116, and the second photodiode 1161 is also configured as multiple rings surrounding the central reflection detector 124. The rings of the first photodiode 1161 and the rings of the second photodiode 1162 are alternately arranged and concentrically surround the central reflection detector 124 of the ring light source 116. Therefore, the first photodiode 1161 and the second photodiode 1162 are uniformly distributed on the ring light source 116. In this embodiment, the number of first photodiodes 1161 is not necessarily equal to the number of second photodiodes 1162, but rather the power of the first optical signal 108a emitted by the first photodiode 1161 is equal to the power of the second optical signal 108b emitted by the second photodiode 1162. In other embodiments, the power of the first optical signal 108a emitted by the first photodiode 1161 may not be equal to the power of the second optical signal 108b emitted by the second photodiode 1162, as long as the processor 140 adjusts the result according to the power difference between the first optical signal 108a and the second optical signal 108b. It should be noted that in Figures 3 to 5 The embodiment illustrates two sets of photodiodes 1161 and 1162 for emitting two light signals of different wavelengths. However, more than two sets of photodiodes can be set in the ring light source 116 to emit more than two light signals and more than two different wavelengths to detect the electrostatic field strength of more than two different materials at the target 104.

[0114] refer to Figure 3In some embodiments, the ring light source 116 performs an optical scanning cycle, wherein the ring light source 116 emits a first optical signal 108a and a second optical signal 108b to scan across the target object 104 in at least one direction, either horizontal or vertical. The ring light source 116 is ring-shaped and configured to surround the reflection detector 124 therein. A first photodiode 1161 and a second photodiode 1162 are uniformly distributed on the ring light source 116, such that the reflection detector 124 is surrounded by the first photodiode 1161 and the second photodiode 1162. Therefore, the first optical signal 108a emitted by the first photodiode 1161 and the second optical signal 108b emitted by the second photodiode 1162 can strike the surface 106 of the target object 104 more uniformly, so that the reflected signals 118a, 118b reflected from the surface 106 of the target object 104 can be received more uniformly by the reflection detector 124.

[0115] In some embodiments, the reflection detector 124 is configured to receive a first reflection signal 118a and a second reflection signal 118b reflected by the surface 106 of the target object 104. Taking the reflection signal 118a as an example, the reflection signal 118a includes a first harmonic light 120a "ωa" and a second harmonic light 122a "2ωa". The second harmonic light 122a is generated via the generation (also known as frequency doubling) of a second harmonic, which occurs when the light of the light signal 108a is reflected by the surface 106 of the target object 104. As a result of the generation of the second harmonic, the two photons of the light of the light signal 108a combine to produce a new photon in the reflection signal 118a, which has approximately twice the energy, approximately twice the frequency, and approximately half the wavelength of the two photons. Similarly, the reflected signal 118b includes a first harmonic light 120b "ωb" and a second harmonic light 122a "2ωb", and two photons of the light from the optical signal 108b are combined to generate a new photon in the reflected signal 118b, which has approximately twice the energy, approximately twice the frequency, and approximately half the wavelength of the two photons.

[0116] That is, the reflected wavelength of the second harmonic light 122a in reflected signal 118a is approximately half the (initial) wavelength of the first harmonic light 120a in reflected signal 118a. Similarly, the reflected wavelength of the second harmonic light 122b in reflected signal 118b is approximately half the (initial) wavelength of the first harmonic light 120b in reflected signal 118b. Furthermore, since the wavelengths of the first optical signal 108a and the second optical signal 108b are different, the wavelength of the first harmonic light 120a from the first optical signal 108a is different from the wavelength of the first harmonic light 120b from the second optical signal 108b. Therefore, the wavelength of the second harmonic light 122a from the first optical signal 108a is different from the wavelength of the second harmonic light 122b from the second optical signal 108b.

[0117] In some embodiments, the reflection detector 124 includes a first filter 134a and a second filter 134b. The first filter 134a is configured to filter a first reflected signal 118a and provide first filtered light (from the first reflected signal 118a) having a wavelength within a first defined wavelength range 128a, and the second filter 134b is configured to filter a second reflected signal 118b and provide second filtered light (from the second reflected signal 118b) having a wavelength within a second defined wavelength range 128b. Therefore, light having wavelengths outside the defined wavelength ranges 128a and 128b is absorbed, filtered, or not transmitted to at least one of the photosensitive sensors 136, while light having wavelengths within the defined wavelength ranges 128a and 128b passes through the respective filters 134a and 134b to reach the photosensitive sensor 136. The defined wavelength range 128a is from wavelength w1 to wavelength w2, and the defined wavelength range 128b is from wavelength w1' to wavelength w2'.

[0118] In some embodiments, the defined wavelength range 128a includes a wavelength w3, which is equal to half the wavelength of the first optical signal 108a generated by the first photodiode 1161, and the defined wavelength range 128b includes a wavelength w3', which is equal to half the wavelength of the second optical signal 108b generated by the second photodiode 1162. In one embodiment, the wavelength of the optical signal 108a is equal to the wavelength of the first harmonic light 120a of the reflected signal 118a. Therefore, the second harmonic light 122a, with a wavelength w3 equal to half the wavelength of the optical signal, passes through the first filter 134a to the photosensor 136. In some embodiments, the wavelength w2 corresponding to the upper limit of the defined wavelength range 128a is smaller than the wavelength of the optical signal. Therefore, the first harmonic light 120a in the reflected signal 118a is blocked by the first filter 134a and does not transmit to the photosensor 136. In some embodiments, wavelength w1 corresponding to the lower limit of the defined wavelength range 128a is greater than half of wavelength w3, such that the first filter 134a blocks at least one of the third harmonic light, fourth harmonic light, etc. in the reflected signal 118a.

[0119] Similarly, the second harmonic light 122b in the reflected signal 118b passes through the second filter 134b to the photosensor 136, and the first harmonic light 120b in the reflected signal 118b is blocked by the second filter 134b and does not transmit to the photosensor 136. Additionally, the second filter 134b blocks at least one of the third harmonic light, fourth harmonic light, etc., in the reflected signal 118b. Therefore, according to some embodiments herein, the second filter 134b provides the photosensor 136 with the second harmonic light 122a, 122b while blocking the first harmonic light 120a, 120b, or at least one of other harmonics from reaching the photosensor 136. Other configurations of the filters are also within the scope of this disclosure.

[0120] In some embodiments, the reflection detector 124 further includes a first optical sensor 135a and a second optical sensor 135b. The first optical sensor 135a is configured to receive first filtered light (e.g., second harmonic light 122a) passing through a first filter 134a and having a wavelength within the defined wavelength range 128a. The second optical sensor 135b is configured to receive second filtered light (e.g., second harmonic light 122b) passing through a second filter 134b and having a wavelength within the defined wavelength range 128b.

[0121] In some embodiments, the reflection detector 124 further includes one or more lenses 130, 132 configured to conduct a first reflected signal 118a to a first filter 134a and a second reflected signal 118b to a second filter 134b. These one or more lenses include a focal lens 130, a polarizing lens 132, or at least one of one or more other lenses. In some embodiments, the focal lens 130 is configured to direct light striking the focal lens 130 toward at least one of the polarizing lens 132 or filters 134a and 134b. In some embodiments, implementing the reflection detector 124 through the focal lens 130 allows more light from the reflected signals 118a and 118b to reach the corresponding filters 134a and 134b, thereby improving the accuracy of the signal generated by the photosensor 136, compared to embodiments without the focal lens 130. In some embodiments, the polarizing lens 132 is configured to optically polarize photons of light striking the lens 132 and to transmit the polarized photons to corresponding filters 134a and 134b. In some embodiments, implementing the reflection detector 124 with the polarizing lens 132 provides higher resolution of the signal generated by the optical sensor 136 compared to embodiments without the polarizing lens 132.

[0122] Therefore, the light sensor 136 is used to generate a first electrical signal and a second electrical signal based on the filtered light provided by filters 134a, 134b. In some embodiments, the electrical signal is an indication of a measurement of the intensity of the filtered light. In some embodiments, the measurement of the intensity of the filtered light corresponds to a measurement of the intensity of the second harmonic light 122a and 122b, for example, at least in part due to the filtered light including the second harmonic light 122a and 122b and light other than the second harmonic light 122a and 122b filtered out from the filtered light by filters 134a, 134b. In some embodiments, the light sensor 136 includes a photodiode array 138. The photodiodes in the photodiode array 138 are configured to generate a current for the electrical signal, wherein the amount of current generated by the photodiode depends on the amount of photons reaching the photodiode. The photons are sensed, detected, or converted into electrons by the photodiodes. In some embodiments, the first electrical signal and the second electrical signal generated by the light sensor 136 have at least one of a higher voltage or a higher current representing a higher measurement of the intensity of the filtered light.

[0123] In some embodiments, processor 140 generates an electrostatic field strength map based on multiple measurements of electrostatic field strength. The electrostatic field strength map is an indication of the multiple measurements of electrostatic field strength. In some embodiments, the electrostatic field strength map is an indication of multiple points or regions on the surface 106 of a target object 104 associated with the multiple measurements of electrostatic field strength. In some embodiments, the electrostatic field strength map includes an array of values, wherein the values ​​in the array are associated with a point or region on the surface 106 of the target object 104 and are indications of the electrostatic field strength measurements associated with that point or region. In some embodiments, a first value in the value array is associated with a first point or region on the surface 106 and is an indication of a first measurement of the electrostatic field strength. A second value in the value array is associated with a second point or region on the surface 106 and is an indication of a second measurement of the electrostatic field strength.

[0124] In some embodiments, the electrostatic field strength map includes an electrostatic field strength image. In some embodiments, the electrostatic field strength image is an indication of multiple measurements of electrostatic field strength and multiple points or regions of the surface 106 of the target object 104 associated with the multiple measurements of electrostatic field strength. In some embodiments, the processor 140 includes an image signal processor configured to generate the electrostatic field strength image. In some embodiments, the electrostatic field strength image is a color-coded image, wherein the pixel color of the electrostatic field strength image is an indication of the measured value of electrostatic field strength associated with a corresponding pixel point on the surface 106 of the target object 104.

[0125] In some embodiments, the processor 140 determines the colors of multiple pixels in an electrostatic field strength image based on multiple measurements of the electrostatic field strength. In some embodiments, the processor 140 determines a first pixel color from the multiple pixel colors based on a first measurement of the electrostatic field strength associated with a first point or region. The processor 140 generates one or more first pixels of the electrostatic field strength image based on the first pixel color. At least one of the following—shade, tint, tone, color, etc.—of the first pixel color is based on the first measurement of the electrostatic field strength. The one or more first pixels of the electrostatic field strength image correspond to a first point or region on surface 106.

[0126] In some embodiments, the processor 140 determines a second pixel color from a plurality of pixel colors based on a second measurement of the electrostatic field strength associated with the second point or region. The processor 140 generates one or more second pixels of an electrostatic field strength image based on the second pixel color. At least one of the following—brightness, saturation, hue, color, etc.—of the second pixel color is based on the measurement of the electrostatic field strength. The one or more second pixels of the electrostatic field strength image correspond to a second point or region on surface 106.

[0127] In some embodiments, if a first measured value of the electrostatic field strength differs from a second measured value of the electrostatic field strength, then at least one of the brightness, saturation, hue, and color of the first pixel color differs from at least one of the brightness, saturation, hue, and color of the second pixel color. In one embodiment, a first range of electrostatic field strength measurements corresponds to red, a second range of electrostatic field strength measurements corresponds to blue, and a third range of electrostatic field strength measurements corresponds to at least one of purple, etc. In some embodiments, the first range of electrostatic field strength measurements is associated with various shades, saturations, hues, etc. of red, wherein a higher measured value of the electrostatic field strength within the first range corresponds to a darker or lighter shade, saturation, hue, etc. of red compared to a lower measured value of the electrostatic field strength within the first range.

[0128] In some embodiments, device 102 includes an image sensor configured to generate a visual image of target 104. In some embodiments, the image sensor is part of or separate from processor 140. The image sensor includes at least one of charge-coupled device (CCD) image sensor, complementary metal-oxide-semiconductor (CMOS) image sensor, contact image sensor (CIS), recording film, or other devices. The image sensor generates a visual image as a visual representation of target 104. In some embodiments, processor 140 (e.g., an image signal processor or processor 140) generates an electrostatic field strength image based on multiple measurements of electrostatic field strength and the visual image. In some embodiments, processor 140 generates the electrostatic field strength image using the visual image and multiple pixel colors determined based on multiple electrostatic field strength measurements, for example, by combining the visual image with multiple pixel colors to generate the electrostatic field strength image. In some embodiments, processor 140 modifies the visual image based on multiple pixel colors to generate the electrostatic field strength image. In some embodiments, the electrostatic field strength image is a visual representation of target 104 and multiple measurements of electrostatic field strength.

[0129] In some embodiments, device 102 is positioned facing target 104 such that optical signal 108 is emitted toward target 104. In some embodiments, during, before, or after operation of target 104, device 102 determines a measurement of the electrostatic field strength associated with target 104, generates an electrostatic field strength map associated with target 104, or detects one or more electrostatic events associated with target 104. In some embodiments, target 104 is a semiconductor manufacturing apparatus, and operation of target 104 corresponds to a state of target 104, wherein target 104 is actively used to perform one or more operations, such as guiding fluid through a tube, performing CVD, performing plasma CVD, performing high-density plasma CVD, performing surface treatment, performing plasma surface treatment, performing implantation processes, performing PVD, performing plasma-enhanced PVD, performing etching, performing dry etching, performing wet etching, performing plasma etching, activating a robotic arm, etc.

[0130] In some embodiments, target object 104 is used for a facility for manufacturing semiconductor devices, such as an industrial facility. In some embodiments, target object 104 is used to perform one or more semiconductor manufacturing acts, corresponding to at least a portion of a semiconductor manufacturing process performed to at least partially manufacture a semiconductor device. In some embodiments, the one or more semiconductor manufacturing acts correspond to at least one of front-end process (FEOL) manufacturing, back-end process (BEOL) manufacturing, semi-finished product manufacturing, or other types of semiconductor manufacturing. In some embodiments, target object 104 corresponds to equipment that directly handles semiconductor devices. In some embodiments, target object 104 corresponds to equipment that manages at least one of temperature, air pressure, humidity, etc., of a facility. In some embodiments, target object 104 corresponds to an equipment, such as pipes, valves, branch pipes, power lines, etc., configured to supply resources, including at least one of gas, liquid, heat, energy, etc., to tools in the facility, wherein the resources are used by the tools to perform semiconductor manufacturing acts. In some embodiments, the semiconductor device includes at least one of transistors, gate-all-around field-effect transistors (GAA FETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), fin field-effect transistors (finFETs), two-dimensional (2D) devices, or other types of semiconductor devices.

[0131] In some embodiments, device 102 is in a fixed position, such as coupled to a fixed base. In some embodiments, device 102 is coupled to a mobile or portable device or vehicle. For example, device 102 may be integrated with mobile devices within an industrial site where semiconductor devices are manufactured, such as overhead hoist transport (OHT), automated material handling systems (AMHS), unmanned aerial vehicles (UAVs), robotic arms, etc. In some embodiments, device 102 may rotate about an axis, for example, coupled to a motor that automatically controls the angular position of device 102 relative to the axis. In some embodiments, the range by which device 102 determines at least one of the multiple measurements of electrostatic field strength or generates an electrostatic field strength map is adjustable. In some embodiments, increasing the range corresponds to zooming out, such that at least one of the multiple measurements of electrostatic field strength or the electrostatic field strength map covers a larger area. In some embodiments, decreasing the range corresponds to zooming in, such that at least one of the multiple measurements of electrostatic field strength or the electrostatic field strength map covers a smaller area.

[0132] Embodiments are envisioned in which at least some of the devices 102 (e.g., at least one of the ring light source 116 or the reflection detector 124) are implemented as detection devices (e.g., in the form of an endoscope) that can be inserted into and pass through a cavity. In some embodiments, the detection devices comprise only some of the devices 102, and the detection devices are smaller than the implementation of the entire device 102 in a single package, thus allowing insertion through a smaller opening and / or positioning in a smaller space than the single package. In some embodiments, the detection devices are located within a target 104, such as at least one of a process chamber, valve distribution box, pipe, etc., such that at least one of the measurements determining the electrostatic field strength, electrostatic field strength map, or electrostatic event originates from within the target 104. Embodiments in which the entire device 102 is implemented in a single package are envisioned.

[0133] Figures 6 to 9 An image of electrostatic field strength is shown using device 102 according to some embodiments, wherein target 104 includes a first valve 204, a second valve 206, and a pipe 208 (e.g., configured to conduct fluid 210 including at least one of liquid or gas). Figure 6 A perspective view of a device 102 and a target 104 according to some embodiments is shown. In some embodiments, the device 102 is positioned facing the target 104 and emits an optical signal 108 toward the target 104. Figure 1(As shown). The first valve 204 is at least one of a manual valve, an automatic valve, or other type of valve. The second valve 206 is at least one of a manual valve, an automatic valve, or other type of valve. In some embodiments, fluid 210 is guided from the second valve 206 to the first valve 204 via a pipe 208.

[0134] Figure 8 A visual image of a target 104 (shown as reference numeral 220) generated by an image sensor using device 102 according to some embodiments is shown. The visual image 220 includes a visual representation of the target 104. Figure 8 A representation 230 of multiple pixel colors determined based on multiple electrostatic field strength measurements is shown according to some embodiments.

[0135] Figure 9 An electrostatic field strength map generated by device 102 according to some embodiments is shown, wherein the electrostatic field strength map includes an electrostatic field strength image 240. In some embodiments, processor 140 processes visual image 220 (such as...) Figure 7 (as shown) and multiple pixel colors (such as) Figure 8 The representation 230 is combined to produce an electrostatic field strength image 240 (as shown). Figure 9 (As shown). In some embodiments, the processor 140 modifies the visual image 220 based on the colors of multiple pixels to generate an electrostatic field strength image 240. In some embodiments, the electrostatic field strength image 240 includes a visual representation of the target 104 and multiple measurements of the electrostatic field strength.

[0136] See Figure 3 and Figure 6 In one embodiment, the first material of the first element (e.g., the first valve 204) of the first target 104 is different from the second material of the second element (e.g., the second valve 206) of the target 104. The first wavelength of the first optical signal 108a and the second wavelength of the second optical signal 108b can be predetermined according to corresponding material parameters such as geometry, physical properties, and laser absorption, corresponding to the materials of the first and second elements. Different materials respond to different laser wavelengths. Generally, the second harmonic light 122a and 122b are proportional to the electrostatic field strength, while the electrostatic field strength is inversely proportional to the wavelength of the optical signals 108a and 108b and the dielectric constant of the target 104. That is, optical signals 108a and 108b with larger wavelengths can be selected to measure the electrostatic field strength of materials with larger dielectric constants. For example, the first material includes Buckminsterfullerene, known as formula C 60(Its dielectric constant is approximately 4), and the first wavelength of the first optical signal 108a used to measure the electrostatic field strength of the first material can be approximately 1000 nm. The second material includes polyimide (its dielectric constant is approximately 3 to 4), and the second wavelength of the second optical signal 108a used to measure the electrostatic field strength of the second material can be approximately 900 nm. In one embodiment, the second material includes perfluoroalkoxyalkane (PFA) (its dielectric constant is approximately 2.1), and the second wavelength of the second optical signal 108a used to measure the electrostatic field strength of the second material can be approximately 850 nm. However, this disclosure is not limited thereto.

[0137] In one embodiment, a first optical signal 108a and a second optical signal 108b can be emitted simultaneously to measure the electrostatic field strength of the first material and the second material simultaneously, generating an electrostatic field strength map including the electrostatic field strength image 240 of the first element 204 and the second element 206. In other embodiments, the first optical signal 108a and the second optical signal 108b can be emitted sequentially (not simultaneously, but with a certain time delay) to measure the electrostatic field strength of the first material and the second material sequentially. For example, the electrostatic field strength of the first material can be measured by first emitting the first optical signal 108a through the first photodiode 1161, and then the electrostatic field strength of the second material can be measured by emitting the second optical signal 108b through the second photodiode 1162. Then, an electrostatic field strength map including the electrostatic field strength image 240 of the first element 204 and the second element 206 is generated.

[0138] In some embodiments, the electrostatic field strength image 240 (e.g.) Figure 9 (As shown) via the display 142 of device 102 (e.g.) Figure 1 and Figure 3 (As shown). In some embodiments, the processor 140 updates the display 142 to display an updated and / or current electrostatic field strength image. The processor 140 updates the display 142 periodically, continuously, or in response to at least one of generating an updated and / or current electrostatic field strength image based on updated and / or current measurements of the electrostatic field strength, or generating an updated and / or current visual image using an image sensor. According to some embodiments, the electrostatic field strength image displayed via the display 142 is a real-time representation of the measured electrostatic field strength of the target 104. Embodiments in which the display 142 is decoupled from the device 102 are contemplated, and the electrostatic field strength image 240 is controlled to be displayed wirelessly or via a physical connection, at least one of these methods.

[0139] In some embodiments, the processor 140 detects electrostatic events based on multiple measurements of electrostatic field strength. In some embodiments, electrostatic events are detected based on an electrostatic field strength map, such as an electrostatic field strength image 240. In some embodiments, an electrostatic event corresponds to at least one of static charge accumulation, electrostatic hotspots, or potential ESD events on the target object 104. If an electrostatic event is not detected or addressed, it may cause damage to the target object 104 due to at least one of ESD, electric arc, micro-arc, or other events.

[0140] In some embodiments, the processor 140 detects an electrostatic event based on the following determination: one or more electrostatic field strength measurements associated with one or more points or regions on the surface 106 of the target object 104 exceed a threshold measurement value for the electrostatic field strength. In some embodiments, an electrostatic event is determined to be associated with one or more points or regions on the surface 106 of the target object 104. In some embodiments, the processor 140 detects an electrostatic event based on the determination that the area covered by one or more points or regions exceeds a critical size. In some embodiments, one or more measurements of the electrostatic field strength exceeding the threshold measurement value indicates an increased probability of an event occurring at one or more points or regions on the surface 106 that could potentially damage the target object 104, such as at least one of ESD, electric arc, micro-arc, or other events.

[0141] In some embodiments, the processor 140 detects an electrostatic event based on a determination that the change in electrostatic field strength at one or more points or regions on the surface 106 of the target object 104 exceeds a critical change in the electrostatic field strength. In some embodiments, the change in electrostatic field strength is determined based on one or more first measurements of the electrostatic field strength associated with one or more points or regions on the surface 106, and multiple second measurements of the electrostatic field strength associated with one or more points or regions on the surface 106, previously determined by the device 102. In some embodiments, the change in electrostatic field strength is determined based on the difference between the measured value of the electrostatic field strength in one or more first measurements and the measured value of the electrostatic field strength in one or more second measurements. In some embodiments, the change in electrostatic field strength corresponds to an increase in the electrostatic field strength at one or more points or regions. In some embodiments, a change in electrostatic field strength exceeding a critical change in the electrostatic field strength indicates an increased probability of an event occurring at one or more points or regions on the surface 106 that could damage the target object 104, such as at least one of ESD, electric arc, micro-arc, or other events.

[0142] In some embodiments, the processor 140 detects an electrostatic event based on a determination that one or more pixels of an electrostatic field strength image 240 associated with one or more points or regions on the surface 106 of the target object 104 are one or more colors from a set of colors associated with an electrostatic event. In some embodiments, an electrostatic event is determined to be associated with one or more points or regions on the surface 106 of the target object 104. In some embodiments, the computer 140 detects an electrostatic event based on a determination that one or more pixels of one or more colors have a pixel density exceeding a critical pixel density or a determination that the number of such one or more pixels exceeds a critical number. In some embodiments, one or more pixels being at least one of a defined set of colors, having a pixel density exceeding a critical pixel density, or having a number exceeding a critical number indicates an increased probability of an event occurring at one or more points or regions on the surface 106 that may cause damage to the target object 104, such as at least one of ESD, electric arc, micro-arc, or other events.

[0143] In some embodiments, the processor 140 detects an electrostatic event based on the identification of changes in the pixel color of one or more pixels associated with one or more points or regions on the surface 106 of the target object 104. In some embodiments, the change in the pixel color of one or more pixels is determined by comparing an electrostatic field strength image 240 with a second electrostatic field strength image previously generated by the device 102. In some embodiments, an electrostatic event is determined to be associated with one or more points or regions on the surface of the target object 104 based on one or more pixels associated with the change in pixel color. In some embodiments, a change in pixel color from the second electrostatic field strength image to the electrostatic field strength image 240 for one or more pixels associated with one or more points or regions indicates an increased probability of an event occurring at one or more points or regions on the surface that could potentially damage the target object 104, such as at least one of ESD, electric arc, micro-arc, or other events.

[0144] In some embodiments, the processor 140 detects electrostatic events based on patterns (e.g., pixel patterns) in an electrostatic field strength image 240. In some embodiments, the electrostatic field strength image 240 is analyzed to identify patterns. In some embodiments, a pattern corresponds to a set of pixels in the electrostatic field strength image 240. In some embodiments, an electrostatic event is detected based on a pattern that matches a defined pattern of a pixel associated with an electrostatic event. In some embodiments, the pattern is compared to multiple defined patterns of pixels (associated with electrostatic events) to determine if the pattern matches a defined pixel pattern. In some embodiments, comparing the pattern to the defined pixel pattern includes determining a similarity score representing the similarity (such as visual similarity) between the pattern and the defined pixel pattern. In some embodiments, a determination that the pattern matches a defined pixel pattern is based on a similarity score exceeding a critical similarity score. In some embodiments, a pattern matching a defined pixel pattern indicates an increased probability of an event occurring at one or more points or regions on a surface 106 corresponding to a set of pixels of that pattern, which could potentially damage the target 104, such as at least one of ESD, electric arc, micro-arc, or other events.

[0145] In some embodiments, the electrostatic field strength map generated by device 102 is monitored, for example, in real time when the electrostatic field strength map is generated, to detect electrostatic events. In some embodiments, processor 140 detects electrostatic events based on the detection of anomalous events. In some embodiments, one or more patterns of electrostatic field strength behavior are identified by monitoring the electrostatic field strength map. In some embodiments, one or more patterns are identified by performing pattern recognition. In some embodiments, one or more patterns correspond to temporary patterns of electrostatic field strength over time, resulting from the operation of target object 104 (e.g., typical operation). In some embodiments, anomalous events are detected based on identifying deviations from one or more patterns. In some embodiments, deviations from one or more patterns are associated with one or more points or regions of surface 106. In some embodiments, an anomalous event indicates an increased probability of an event occurring at one or more points or regions of surface 106 associated with the anomalous event, which may cause damage to target object 104, such as ESD, arcing, micro-arcs, or other events.

[0146] In some embodiments, processor 140 uses a trained machine learning model to detect electrostatic events. In some embodiments, the trained machine learning model is trained using training information (such as electrostatic field strength images) generated over a period of time, including a map of electrostatic field strength. In some embodiments, the electrostatic field strength map is retrieved from an electrostatic field strength map data storage for storing the generated electrostatic field strength map. In some embodiments, the electrostatic field strength map is generated by device 102. In some embodiments, an electrostatic field strength map of target 104 or at least one of one or more other elements is generated in association with target 104 or at least one of one or more other elements, for example, based on electrostatic field strength measurements (determined over a period of time). In some embodiments, the trained machine learning model includes artificial neural networks, artificial intelligence models, pattern recognition models, tree-based models, machine learning models for performing linear regression, machine learning models for performing logistic regression, decision tree models, support vector machines (SVM), Bayesian network models, k-nearest neighbor (k-NN) models, K-means models, random forest models, machine learning models for performing dimensionality reduction, gradient boosting, or other machine learning models. In some embodiments, the trained machine learning model is trained to perform electrostatic event detection to detect electrostatic events. In some embodiments, the trained machine learning model performs anomalous event detection to identify anomalous electrostatic field strength events considered as electrostatic events. In some embodiments, the trained machine learning model performs pattern recognition to identify one or more patterns in electrostatic field strength measurements generated by the operation (e.g., typical operation) of the target object 104, and detects one or more electrostatic events by identifying deviations from these patterns. In some embodiments, the newly generated electrostatic field strength map is used to update the trained machine learning model, for example, periodically or continuously. In some embodiments, the electrostatic field strength map generated by device 102 is used to update the trained machine learning model in real time when the electrostatic field strength map is generated. In some embodiments, training and / or updating the trained machine learning model includes adjusting the trainable parameters of the trained machine learning model to increase the accuracy of electrostatic event detection performed using the trained machine learning model.

[0147] Figure 9A first electrostatic event 242 and a second electrostatic event 244 detected by processor 140 according to some embodiments are shown. In some embodiments, based on the first valve 204 ( Figure 6 The first electrostatic event 242 is detected by associating one or more pixels with one or more points or regions (as shown in the figure). In some embodiments, the first electrostatic event 242 is detected based on the determination that one or more pixels are one or more colors from a defined set of colors associated with the electrostatic event. In some embodiments, the first electrostatic event 242 is detected based on the determination that one or more pixels are an indication of an electrostatic field strength measurement exceeding a critical measurement value of the electrostatic field strength. In some embodiments, the first electrostatic event 242 is detected based on the determination of the change in the pixel color of one or more pixels over time, indicating an electrostatic field strength change exceeding a critical change of the electrostatic field strength. In some embodiments, the first electrostatic event 242 is detected using a trained machine learning model. In some embodiments, the first electrostatic event 242 is a fluid 210 (such as...) Figure 6 (As shown) For example, a high-resistance fluid flows through at least one of pipe 208 or first valve 204 and introduces static charge into first valve 204.

[0148] Figure 10A perspective view of an apparatus and object according to some embodiments is shown. In some embodiments, object 104 includes at least a portion of a semiconductor processing apparatus. The semiconductor processing apparatus includes a semiconductor processing chamber 304, a semiconductor wafer 310 (e.g., a substrate, die, etc., and / or a device (e.g., a transistor, diode, etc.)) formed therein, on, or by, comprising semiconductors and / or other materials, a target 306, a wafer support 312, or one or more other elements. In some embodiments, the semiconductor wafer 310 and / or one or more other elements are only associated with the semiconductor processing apparatus and are therefore not necessarily part of the semiconductor processing apparatus (e.g., simply placed within the semiconductor processing apparatus to be processed). In some embodiments, the semiconductor processing apparatus includes a PVD apparatus, a CVD apparatus, an electroplating apparatus, an etching apparatus, a photolithography apparatus, a CMP apparatus, an apparatus utilizing a plasma 314, or other apparatus for processing the semiconductor wafer 310 in the semiconductor processing chamber 304. In some embodiments, device 102 is located outside semiconductor processing chamber 304 and utilizes window 308 on the outer wall of semiconductor processing chamber 304 to generate an electrostatic field strength map associated with electrostatic field strength measurements inside semiconductor processing chamber 304, thereby enabling device 102 to detect one or more electrostatic events occurring on the same or different materials within semiconductor processing chamber 304. In some embodiments, the one or more electrostatic events include electrostatic events caused by plasma 314 (e.g., high-density plasma). In some embodiments, window 308 is an opening or made of a material (e.g., a transparent material) through which laser signals 108a, 108b and reflected signals 118a, 118b can pass. Embodiments are envisioned in which device 102 generates an electrostatic field strength map associated with electrostatic field strength measurements outside semiconductor processing chamber 304 (e.g., on the outer wall of semiconductor processing chamber 304), thereby enabling device 102 to detect one or more electrostatic events outside semiconductor processing chamber 304.

[0149] Figure 11 A perspective view of an apparatus 102 and a target 104 including at least a portion of a semiconductor processing apparatus, according to some embodiments, is shown, wherein the apparatus 102 is located inside a semiconductor processing chamber 304. Therefore, the apparatus 102 generates an electrostatic field strength map associated with electrostatic field strength measurements inside the semiconductor processing chamber 304, thereby enabling the apparatus 102 to detect one or more electrostatic events within the semiconductor processing chamber 304.

[0150] Figures 12 to 13 The operation of device 102 according to some embodiments is shown, wherein target 104 includes valve manifold box 414 or at least one of one or more pipes connected to valve manifold box 414. Figure 12 A perspective view of a device 102 and a target 104 according to some embodiments is shown. In some embodiments, the device 102 is positioned facing the target 104. In some embodiments, a valve dispensing box 414 is configured to dispense fluid from a source to one or more tools using one or more tubes. In some embodiments, the tools use a fluid comprising at least one of a gas or a liquid to manufacture a semiconductor device. In some embodiments, the one or more tubes include at least one of tubes 404, 406, 408, or 410. In some embodiments, the valve dispensing box 414 includes one or more gauges for displaying measurements (e.g., pressure measurements), which are associated with at least one of a plurality of tubes or valves within or coupled to the valve dispensing box 414. These one or more gauges include at least one of gauges 418, 420, 422, or 424.

[0151] Figure 13 An image 432 of the electrostatic field strength generated by device 102 according to some embodiments is shown. Reference Figure 12 and Figure 13 In some embodiments, an electrostatic field strength image 432 is generated using measurements of the electrostatic field strength across a point or region of a target 104, including at least one of the valve distribution box 414 or one or more pipes, for example using... Figures 6 to 9 As shown and / or about Figures 6 to 9 One or more technologies described. In one embodiment, reference is made to... Figure 3 and Figure 12 The first material of the first element (e.g., valve distribution box 414) is different from the second material of the second element (e.g., pipes 404-410) of the target object 104. Therefore, the first wavelength of the first optical signal 108a and the second wavelength of the second optical signal 108b can be predetermined according to the materials of the first and second elements to measure the electrostatic field strength of the first and second materials. Then, an electrostatic field strength map including an electrostatic field strength image 432 for the first and second elements is generated. The electrostatic field strength image 432 is a visual representation of the target object 104 and multiple measured values ​​of the electrostatic field strength.

[0152] According to some embodiments, the third electrostatic event 428 and the fourth electrostatic event 430 are detected by the processor 140. In some embodiments, based on the corresponding valve distribution box 414 ( Figure 12The third electrostatic event 428 is detected by one or more pixels associated with one or more points or regions (as shown in the diagram). In some embodiments, the third electrostatic event 428 is detected based on the determination that one or more pixels are one or more colors from a defined set of colors associated with the electrostatic event. In some embodiments, the third electrostatic event 428 is detected based on the determination that one or more pixels are an indication of an electrostatic field strength measurement exceeding a critical measurement value. In some embodiments, the third electrostatic event 428 is detected based on the determination that the change in the pixel color of one or more pixels over time is an indication of an electrostatic field strength change exceeding a critical change value. In some embodiments, the third electrostatic event 428 is detected using a trained machine learning model. In some embodiments, at least one of the third electrostatic event 428 or the fourth electrostatic event 430 is a result of fluid (e.g., a high-resistance fluid) flowing through the valve dispensing box 414.

[0153] Figure 14A schematic diagram of a system 500 according to some embodiments is shown. System 500 includes at least one of the above-described device 102, a site equipment 502, a controller 514, an electrostatic information display system 506, or one or more client devices 508. In one embodiment, device 102 may be coupled to a mobile or portable device or vehicle for movement around the facility. For example, device 102 may be integrated with a mobile device 501 within an industrial site manufacturing semiconductor devices, such as overhead crane transport (OHT), automated material handling system (AMHS), unmanned aerial vehicle (UAV), robotic arm, etc., so that device 102 can be transported along a predetermined route map and / or trajectory of mobile device 501 along the floor, ceiling, or walls of the industrial site to measure the electrostatic field strength of various devices distributed at different locations within the site. In other embodiments, system 500 may include multiple devices 102 described above for simultaneously measuring the electrostatic field strength of various devices distributed at various locations within the facility. In some embodiments, device 102 is an electrostatic field monitoring device for performing electrostatic field strength measurements of multiple targets (e.g., semiconductor manufacturing components) throughout the site. The target objects include (i) one or more components comprising PVD equipment, such as plasma-enhanced PVD equipment; (ii) one or more components comprising CVD equipment; (iii) one or more components comprising electroplating equipment; (iv) one or more components comprising etching equipment; (v) one or more components comprising lithography equipment; (vi) one or more components comprising CMP equipment; (vii) one or more components comprising semiconductor wafer storage equipment, such as one or more FOUPs; (viii) one or more components utilizing plasma; and (ix) one or more components comprising one or more tubes, such as one or more tubes or one or more tubes of other types, configured for transmission. (x) a liquid or at least one gas in a liquid, (xi) one or more diverter tubes, (xi) one or more elements including a fluid storage device, (xii) one or more processing chambers, (xiii) one or more pumps, (xiv) one or more robotic arms, (xv) one or more inventory tools, (xvi) one or more management tools, (xvii) one or more processing tools, (xviii) inspection equipment, (xix) one or more elements of an automated material handling system, (xx) one or more elements of an automated transport system, (xxi) a transport trough, (xxii) one or more masks, (xxiii) one or more mask boxes, or (xxiv) one or more other elements.

[0154] In some embodiments, system 500 may include one or more electrostatic field monitoring devices 102 configured to transmit a set of electrostatic field signals 512 to controller 514. In some embodiments, a first electrostatic field signal in the set of electrostatic field signals 512 is provided by a first electrostatic field monitoring device in electrostatic field monitoring device 102, and a second electrostatic field signal in the set of electrostatic field signals 512 is provided by a second electrostatic field monitoring device in electrostatic field monitoring device 102.

[0155] In some embodiments, the first electrostatic field monitoring device is positioned close to or facing at least one of a plurality of elements, and is configured to: (i) determine a measured value of the electrostatic field strength associated with the first element, (ii) generate an electrostatic field strength map associated with the first element, or (iii) detect an electrostatic event associated with the first element. In some embodiments, the first electrostatic field signal indicates one of: a measured value of the electrostatic field strength associated with the first element or an electrostatic field strength map associated with the first element. In some embodiments, in response to the first electrostatic field monitoring device detecting an electrostatic event, the first electrostatic field monitoring device incorporates an indication of the electrostatic event into the first electrostatic field signal, thereby notifying the controller 514 of the electrostatic event.

[0156] In some embodiments, the second electrostatic field monitoring device is positioned close to or facing at least one of the plurality of elements, and is configured to: (i) determine a measurement of the electrostatic field strength associated with the second element, (ii) generate an electrostatic field strength map associated with the second element, or (iii) detect an electrostatic event associated with the second element. In some embodiments, the second electrostatic field signal indicates one of the following: a measured value of the electrostatic field strength associated with the second element or an electrostatic field strength map associated with the second element. In some embodiments, in response to the second electrostatic field monitoring device detecting an electrostatic event, the second electrostatic field monitoring device incorporates an indication of the electrostatic event into the second electrostatic field signal, thereby notifying the controller 514 of the electrostatic event.

[0157] In other embodiments, a first electrostatic field signal and a second electrostatic field signal of a set of electrostatic field signals 512 may be provided by an electrostatic field monitoring device 102 integrated with a mobile device (e.g., an overhead crane (OHT), robotic arm, etc.) in an industrial site where semiconductor devices are manufactured, such that the electrostatic field monitoring device 102 is configured to move between various locations to monitor the electrostatic field of different components in the industrial site.

[0158] Therefore, the electrostatic field monitoring device 102 is moved to be positioned near or facing at least one of the plurality of elements, and is configured to: (i) determine a measured value of the electrostatic field strength associated with the first element, (ii) generate an electrostatic field strength map associated with the first element, or (iii) detect an electrostatic event associated with the first element. In some embodiments, the first electrostatic field signal indicates one of the following: a measured value of the electrostatic field strength associated with the first element or an electrostatic field strength map associated with the first element. In some embodiments, in response to the first electrostatic field monitoring device detecting an electrostatic event, the first electrostatic field monitoring device incorporates an indication of the electrostatic event into the first electrostatic field signal, thereby notifying the controller 514 of the electrostatic event.

[0159] Subsequently, the electrostatic field monitoring device 102 is placed near or facing at least one of the second elements among a plurality of elements, and is configured to: (i) determine a measurement of the electrostatic field strength associated with the second element, (ii) generate an electrostatic field strength map associated with the second element, or (iii) detect an electrostatic event associated with the second element. In some embodiments, the second electrostatic field signal indicates one of the following: a measured value of the electrostatic field strength associated with the second element or an electrostatic field strength map associated with the second element. In some embodiments, in response to the second electrostatic field monitoring device detecting an electrostatic event, the second electrostatic field monitoring device incorporates an indication of the electrostatic event into the second electrostatic field signal, thereby notifying the controller 514 of the electrostatic event.

[0160] Therefore, according to some embodiments, one or more electrostatic field monitoring devices 102 determine electrostatic field strength information associated with a plurality of components throughout the site, and provide the electrostatic field strength information to a controller 514 via this set of electrostatic field signals 512. In some embodiments, the electrostatic field strength information of this set of electrostatic field signals 512 indicates one or more electrostatic events detected by one or more electrostatic field monitoring devices 102. In some embodiments, instead of one or more electrostatic events detected by one or more electrostatic field monitoring devices 102, the set of electrostatic field signals 512 provided by one or more electrostatic field monitoring devices 102 indicates at least one of the electrostatic field strengths or electrostatic field strength maps associated with a plurality of components, wherein the controller 514 analyzes the measured values ​​of the electrostatic field strengths or at least one of the electrostatic field strength maps to detect one or more electrostatic events.

[0161] In some embodiments, the controller 514 includes a set of status indicators 520 associated with elements among a plurality of elements in the location. In some embodiments, the indicators in the set of status indicators 520 include lamps (e.g., indicator lights) that indicate whether an electrostatic event has been detected at an element in the location, wherein a lamp in a first state indicates that an electrostatic event has been detected at the element and / or a lamp in a second state indicates that no electrostatic event has been detected at the element. In some embodiments, the first state corresponds to a first color emitted by the lamp, such as red or another color, and the second state corresponds to a second color emitted by the lamp, such as green or another color. This set of status indicators includes at least one of a first indicator "CP1" associated with a first element and a second indicator "CP2" associated with a second element. Of course, two or more indicators associated with two or more elements can be applied.

[0162] In some embodiments, controller 514 determines electrostatic state information associated with a plurality of elements in a location. The electrostatic state information indicates at least one of the following: whether an electrostatic event has been detected at a component of the plurality of elements, and one or more components of the plurality of elements associated with one or more detected electrostatic events or other information.

[0163] In some embodiments, controller 514 provides one or more first signals 510 to location equipment 502. In some embodiments, the one or more first signals 510 are used to control at least some location equipment 502, such as one, some, and / or all of a plurality of elements of a location. In some embodiments, a signal generator of controller 514 is used to generate one or more first signals 510. The one or more first signals 510 are indications of at least one of electrostatic status information or other information. In some embodiments, controller 514 wirelessly transmits one or more first signals 510 to location equipment 502, for example, using a wireless communication device of controller 514. In some embodiments, controller 514 transmits one or more first signals 510 to location equipment 502 through a physical connection between controller 514 and location equipment 502.

[0164] In some embodiments, controller 514 transmits a second signal 518 to electrostatic information display system 506. The second signal 518 is generated using a signal generator of controller 514. In some embodiments, the second signal 518 is an indication of one or more electrostatic field strength maps (e.g., one or more electrostatic field strength images), generated using electrostatic field monitoring devices in a set of electrostatic field monitoring devices 504. In some embodiments, the second signal 518 is an indication of one or more detected electrostatic events. In some embodiments, controller 514 transmits the second signal 518 to electrostatic information display system 506 wirelessly, for example, using a wireless communication device of controller 514. In some embodiments, controller 514 transmits the second signal 518 to electrostatic information display system 506 via a physical connection between controller 514 and electrostatic information display system 506.

[0165] Figure 15 An electrostatic information display system 506 for displaying electrostatic event information is shown according to some embodiments. In some embodiments, the display 602 of the electrostatic information display system 560 is controlled to display at least one of one or more electrostatic field strength maps, one or more electrostatic field strength measurements, alarms for one or more detected electrostatic events, etc.

[0166] In some embodiments, the display 602 displays a first alarm 604 associated with a first electrostatic discharge (ESD) event 242 and a second ESD event 244, and the first ESD event 242 and the second ESD event 244 are associated with at least one of a first valve 204 and a second valve 206. In some embodiments, the first alarm 604 may include information identifying where the first ESD event 242 and the second ESD event 244 are located. In some embodiments, the first alarm 604 includes a representation of an electrostatic field strength image 240. In some embodiments, the representation of the electrostatic field strength image 240 includes indicators 610 and 612, which are overlaid on the electrostatic field strength image 240 and identify areas corresponding to the first ESD event 242 and the second ESD event 244.

[0167] In some embodiments, the display 602 may further display a second alarm 606 associated with the third electrostatic event 428 and the fourth electrostatic event 430, and the third electrostatic event 428 and the fourth electrostatic event 430 are associated with the valve distribution box 414 (e.g., Figure 12(As shown). In some embodiments, the second alarm 606 includes information identifying the locations of the third electrostatic event 428 and the fourth electrostatic event 430. In some embodiments, the second alarm 606 includes a representation of an electrostatic field strength image 432. In some embodiments, the representation of the electrostatic field strength image 432 includes indicators 614 and 616, which are overlaid on the electrostatic field strength image 432 and identify areas corresponding to the third electrostatic event 428 and the fourth electrostatic event 430.

[0168] See Figure 3 and Figure 15 In some embodiments, the materials of the first valve 204 and the second valve 206 are the same as those of the valve distribution box 414 (e.g., Figure 12 The materials of the first light signal 108a and the second light signal 108b emitted by the first photodiode 1161 and the second photodiode 1162 are different, respectively, corresponding to the materials of the first valve 204, the second valve 206, and the valve distribution box 414. These wavelengths are then used to measure the electrostatic field strength of the valves 204, 206, and the valve distribution box 414. Electrostatic field strength maps, including images 240 and 432 of the electrostatic field strength of the valves 204, 206, and the valve distribution box 414, are then generated.

[0169] Therefore, according to some embodiments, in response to the detection of an electrostatic event in a location, the electrostatic information display system 506 automatically warns the viewer of the display 602 of the electrostatic event and its location, thereby enabling the viewer to locate the electrostatic event before it causes damage to one or more components in the location via at least one of ESD, electric arc, micro-arc, or other events.

[0170] In some embodiments, controller 514 (such as Figure 14The controller 514 transmits a third signal 516 to one or more client devices 508. The one or more client devices 508 include at least one of a telephone, smartphone, mobile phone, landline, laptop, desktop computer, hardware, or other type of client device. The third signal 516 is generated using a signal generator of the controller 514. In some embodiments, the third signal 516 is an indication of one or more electrostatic field strength maps (e.g., one or more electrostatic field strength images) generated using electrostatic field monitoring devices in a set of electrostatic field monitoring devices 504. In some embodiments, the third signal 516 is an indication of one or more detected electrostatic events. In some embodiments, the controller 514 wirelessly transmits the third signal 516 to client devices in one or more client devices 508, for example, using a wireless communication device of the controller 514. In some embodiments, the controller 514 transmits the third signal 516 to client devices in one or more client devices 508 through a physical connection between the controller 514 and the client devices. In some embodiments, the client devices in one or more client devices 508 trigger an alarm based on the third signal 516. In some embodiments, the client devices trigger an alarm based on the third signal 516 indicating that an electrostatic event has been detected in a location. In some embodiments, in response to triggering an alarm, alarm information is displayed via a client device. The alarm information includes at least one of the following: an indication that an electrostatic event has been detected in the location, one or more indications of one or more elements in the location where the electrostatic event was detected, or other indications. In some embodiments, in response to triggering an alarm, an alarm sound is output via a speaker connected to the client device. In some embodiments, the third signal 516 includes information sent in response to the detection of an electrostatic event in the location, such as at least one of email, text message, etc. In some embodiments, in response to the detection of an electrostatic event in the location, a telephone call is made, for example, using the dialer of controller 514 to one or more client devices 508 to a client device (e.g., a landline or mobile phone).

[0171] In some embodiments, the operation of the location device 502 is stopped based on a signal from one or more first signals 512 received by the device (indicating at least one of a static electricity event detected at a component associated with the device or indicating an instruction to stop the operation of the device). In some embodiments, the signal indicates an instruction to stop the operation of the device based on a determination by the controller 514 that a static electricity event has been detected at a component associated with the device. In some embodiments, the component is at least one of the device being stopped or a portion of the device being stopped. In some embodiments, the stopping operation of the device includes at least one of: de-energizing one or more components of the device, disconnecting the power supply from one or more components of the device, or the device entering a mode in which the device does not perform one or more operations or other actions.

[0172] In some embodiments, the device switches from the first mode to the second mode based on a signal indicating the detection of an electrostatic event or indicating a switch from the first mode to the second mode. In some embodiments, the first mode is a mode equipped to perform one or more first operations, and the second mode is a mode equipped to perform one or more second operations different from the first operations. In some embodiments, the first mode is a mode in which at least one of the equipped elements is unlocked or access to the elements is not blocked, and the second mode is a mode in which at least one of the equipped elements is locked or access to the elements is blocked. In some embodiments, the first mode is a mode in which at least one of the equipped functions is enabled or does not prevent the use of such functions to start a new process, and the second mode is a mode in which at least one of the device functions is disabled or the use of such functions to start a new process is blocked.

[0173] Therefore, according to some embodiments, in response to the detection of an electrostatic event in the facility, the controller 514 controls the facility equipped with 502 to automatically perform one or more actions, including stopping operation, changing mode, blocking one or more functions or other actions, to prevent the detected electrostatic event from causing damage to one or more components in the facility via at least one of ESD, electric arc, micro-arc or other events.

[0174] Figure 16 This is a flowchart illustrating a method according to some embodiments. Figure 16 A method for measuring the electrostatic field strength of a target object is shown according to some embodiments. Reference Figure 3 and Figure 16In step S110, an optical signal including a first optical signal 108a having a first wavelength and a second optical signal 108b having a second wavelength is emitted to the target object 104. In some embodiments, the first optical signal 108a and the second optical signal 108b are generated by a ring light source 116, including a plurality of first photodiodes 1161 for emitting the first optical signal 108a and a plurality of second photodiodes 1162 for emitting the second optical signal 108b. In one embodiment, the ring light source 116 is a ring-shaped laser source and is configured to emit a laser signal 108 to the target object 104. The first wavelength of the first optical signal 108a is different from the second wavelength of the second optical signal 108b, which is used to detect the electrostatic field strength on different materials at the surface 106 of the target object 104.

[0175] In step S120, a reflected signal is received, including a light signal reflected by the surface 106 of the target object 104. In one embodiment, the reflected signal includes a first reflected signal 118a and a second reflected signal 118b. That is, the first reflected signal 118a of the first light signal 108a is reflected by the surface 106 of the target object 104, and the second reflected signal 118b of the second light signal 108b is reflected by the surface 106 of the target object 104. In some embodiments, a reflection detector 124 is disposed within and surrounded by an annular light source 116, and is configured to receive the first reflected signal 118a of the first light signal 108a and the second reflected signal 118b of the second light signal 108b reflected by the surface 106 of the target object 104.

[0176] In step S130, the reflected signals are filtered to provide filtered light having a filtered wavelength within a defined wavelength range. In one embodiment, the first reflected signal 118a is filtered by filter 134a to provide first filtered light having a filtered wavelength within a defined wavelength range 128a, and the second reflected signal 118b is filtered by filter 134b to provide second filtered light having a filtered wavelength within a defined wavelength range 128b.

[0177] In S140, an electrical signal is generated based on the filtered light. In one embodiment, the electrical signal includes a first electrical signal and a second electrical signal. The first electrical signal is generated by the optical sensor 136 based on the first filtered light, and the second electrical signal is generated by the optical sensor 136 based on the second filtered light.

[0178] In S150, the measured value of the electrostatic field strength at the surface 106 of the target object 104 is determined based on the electrical signal. In one embodiment, the measured value of the electrostatic field strength at the surface 106 of the target object 104 is determined by the processor 140 based on the first electrical signal and the second electrical signal.

[0179] In some embodiments, processor 140 generates an electrostatic field strength map based on multiple measurements of electrostatic field strength. In some embodiments, processor 140 detects electrostatic events based on multiple measurements of electrostatic field strength. In some embodiments, electrostatic events are detected based on an electrostatic field strength map. In some embodiments, an alarm, an indication of an electrostatic event, or a signal indicating an electrostatic event is displayed via display 142.

[0180] In some embodiments, multiple electrostatic field strength maps associated with the target object 104 over a period of time are retrieved, and these maps are used to train a machine learning model to generate a trained machine learning model. The detection of electrostatic events is performed using the trained machine learning model.

[0181] In some embodiments, target 104 includes semiconductor manufacturing equipment. In such embodiments, a semiconductor manufacturing process is initiated in response to a first measurement of the electrostatic field strength among one or more measurements determining the electrostatic field strength satisfying a first threshold (such as a first critical measurement of the electrostatic field strength). In some embodiments, when the semiconductor manufacturing process begins, semiconductor manufacturing elements begin performing the semiconductor manufacturing process. In some embodiments, the first measurement of the electrostatic field strength satisfies the first threshold when it exceeds the first threshold. In some embodiments, the first measurement of the electrostatic field strength satisfies the first threshold when it is less than the first threshold. In some embodiments, the semiconductor manufacturing process is initiated in response to a determination that one, some, and / or all of the one or more measurements of the electrostatic field strength satisfy the first threshold. In some embodiments, the semiconductor manufacturing process is initiated in response to at least a critical proportion of one or more measurements determining the electrostatic field strength satisfying the first threshold.

[0182] In some embodiments, a semiconductor manufacturing process is completed in response to a second measurement of the electrostatic field strength among one or more measurements determining the electrostatic field strength satisfying a second threshold value (such as a second critical measurement value for the electrostatic field strength). The second measurement of the electrostatic field strength may be the same as or different from a first measurement of the electrostatic field strength. The second threshold value may be the same as or different from a first threshold value. In some embodiments, a semiconductor manufacturing element initiates one or more completion actions of the semiconductor manufacturing process to complete the semiconductor manufacturing process. In some embodiments, one or more completion actions are at least one of rinsing a semiconductor wafer, drying a semiconductor wafer, or other completion actions. In some embodiments, a semiconductor manufacturing element stops performing actions of the semiconductor manufacturing process to complete the semiconductor manufacturing process. In some embodiments, a second measurement of the electrostatic field strength satisfies the second threshold value when the second measurement of the electrostatic field strength exceeds the second threshold value. In some embodiments, a second measurement of the electrostatic field strength satisfies the second threshold value when the second measurement of the electrostatic field strength is less than the second threshold value. In some embodiments, a semiconductor manufacturing process is completed in response to one, some, and / or all of one or more measurements determining the electrostatic field strength satisfying the second threshold value. In some embodiments, a semiconductor manufacturing process is completed in response to at least a critical proportion of one or more measurements determining the electrostatic field strength satisfying the second threshold value.

[0183] Based on the above discussion, it can be seen that this disclosure provides various advantages. However, it should be understood that not all advantages need to be discussed herein, and other embodiments may provide different advantages, and not all embodiments need to have specific advantages.

[0184] According to some embodiments of this disclosure, an electrostatic field strength measuring device includes an electrostatic field detection device and a processor. The electrostatic field detection device includes a ring light source configured to emit an optical signal to a target object and a reflection detector disposed within and surrounded by the ring light source, configured to receive a reflected signal of the optical signal reflected from the surface of the target object, and generate an electrical signal based on the reflected signal. The processor is configured to determine a measured value of the electrostatic field strength at the surface of the target object based on the electrical signal. In one embodiment, the ring light source includes a plurality of first photodiodes configured to emit a first optical signal having a first wavelength to the target object, and a plurality of second photodiodes configured to emit a second optical signal having a second wavelength to the target object, wherein the first wavelength and the second wavelength are different. In one embodiment, the reflected signal includes a first reflected signal of the first optical signal reflected from the surface of the target object and a second reflected signal of the second optical signal reflected from the surface of the target object. In one embodiment, the electrical signal includes a first electrical signal generated based on the first reflected signal and a second electrical signal generated based on the second reflected signal. In one embodiment, the reflection detector includes a first filter, a second filter, and a light sensor. A first filter is configured to block light from the first reflected signal having a wavelength outside a first defined wavelength range, and provides first filtered light from the first reflected signal having a wavelength within the first defined wavelength range. A second filter is configured to block light from the second reflected signal having a wavelength outside a second defined wavelength range, and provides second filtered light from the second reflected signal having a wavelength within the second defined wavelength range. An optical sensor is configured to generate the first electrical signal and the second electrical signal based on the first filtered light and the second filtered light, respectively. In one embodiment, the reflection detector further includes a first optical sensor coupled to the first filter and the optical sensor and configured to receive the first filtered light passing through the first filter, and a second optical sensor coupled to the second filter and the optical sensor and configured to receive the second filtered light passing through the second filter. In one embodiment, the first optical signal or the second optical signal has an initial wavelength, and the first defined wavelength range or the second defined wavelength range includes a reflected wavelength substantially equal to half of the initial wavelength. In one embodiment, the reflection detector includes one or more lenses configured to conduct the first reflected signal to the first filter and conduct the second reflected signal to the second filter. In one embodiment, the processor is configured to: determine a pixel color based on a measurement of the electrostatic field strength; and generate one or more pixels of an electrostatic field strength map based on the pixel color. In one embodiment, the electrostatic field strength measuring device includes a display configured to display one or more pixels of the electrostatic field strength map.

[0185] According to some embodiments of this disclosure, the detection device includes a ring light source and a reflection detector. The ring light source includes a plurality of first photodiodes configured to emit a first light signal having a first wavelength to a target object and a plurality of second photodiodes configured to emit a second light signal having a second wavelength to the target object. The reflection detector is disposed within and surrounded by the ring light source and is configured to receive a first reflected signal of the first light signal and a second reflected signal of the second light signal reflected from the surface of the target object, and to generate a first electrical signal and a second electrical signal based on the first reflected signal and the second reflected signal, respectively. In one embodiment, the power of the first light signal is substantially equal to the power of the second light signal. In one embodiment, the reflection detector includes a filter and a light sensor. The filter is configured to filter the first reflected signal and the second reflected signal and provide first filtered light having a first wavelength within a first defined wavelength range and second filtered light having a second wavelength within a second defined wavelength range, wherein the first filtered light originates from the first reflected signal and the second filtered light originates from the second reflected signal. The light sensor is configured to generate the first electrical signal and the second electrical signal based on the first filtered light and the second filtered light, respectively. In one embodiment, the reflection detector includes one or more lenses configured to conduct the reflected signal to the filter. In one embodiment, the detection device further includes a processor configured to determine measurements of features of the target object based on the first electrical signal and the second electrical signal. In one embodiment, the features include the electrostatic field strength at the surface of the target object, the size at the surface of the target object, or the distance from the surface of the reflection detector to the surface of the target object.

[0186] According to some embodiments of this disclosure, a method for measuring the electrostatic field strength of a target object includes: emitting an optical signal to the target object, wherein the optical signal includes a first optical signal having a first wavelength and a second optical signal having a second wavelength; receiving a reflected signal, which includes light of the optical signal reflected by a surface of the target object; filtering the reflected signal to provide filtered light, the filtered light having a filtered wavelength within a defined wavelength range; generating an electrical signal based on the filtered light; and determining a measured value of the electrostatic field strength at the surface of the target object based on the electrical signal. In one embodiment, the method includes: generating an electrostatic field strength map based on the measured value of the electrostatic field strength; detecting an electrostatic event based on the electrostatic field strength map; and at least one of: displaying an alarm indicating the electrostatic event through a display; or providing a signal indicating the electrostatic event. In one embodiment, the method includes: retrieving a plurality of electrostatic field strength maps generated in association with the target object over a period of time; and training a machine learning model using the plurality of electrostatic field strength maps to generate a trained machine learning model, wherein the trained machine learning model is used to detect the electrostatic event. In one embodiment, the target includes a semiconductor manufacturing apparatus, and the method further includes: initiating a semiconductor manufacturing process with the semiconductor manufacturing apparatus in response to a determination that a first measurement of the electrostatic field strength meets a first threshold; or completing the semiconductor manufacturing process in response to a determination that a second measurement of the electrostatic field strength meets a second threshold.

[0187] The foregoing has outlined features of several embodiments to enable those skilled in the art to better understand various aspects of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures for performing the same purposes and / or achieving the same advantages of the embodiments described herein. Those skilled in the art should also recognize that such equivalent structures do not depart from the spirit and scope of this disclosure, and that various alterations, substitutions, and modifications can be made to this document without departing from the spirit and scope of this disclosure.

Claims

1. An electrostatic field strength measuring device, characterized in that, include: The ring light source is configured to emit light signals to the target object; as well as A reflection detector, disposed within and surrounded by the ring light source, is configured to receive a reflected signal of the light signal reflected from the surface of the target object, and to generate an electrical signal based on the reflected signal; as well as The processor is configured to determine a measured value of the electrostatic field strength at the surface of the target object based on the electrical signal.

2. The electrostatic field strength measuring device according to claim 1, characterized in that, The ring light source includes: A plurality of first photodiodes are configured to emit a first optical signal having a first wavelength to the target object; and Multiple second photodiodes are configured to emit a second optical signal having a second wavelength to the target, wherein the first wavelength is different from the second wavelength.

3. The electrostatic field strength measuring device according to claim 2, characterized in that, The reflected signal includes a first reflected signal of the first light signal reflected by the surface of the target object and a second reflected signal of the second light signal reflected by the surface of the target object, and the electrical signal includes a first electrical signal generated based on the first reflected signal and a second electrical signal generated based on the second reflected signal.

4. The electrostatic field strength measuring device according to claim 3, characterized in that, The reflection detector includes: A first filter is configured to block light from the first reflected signal, having a wavelength outside a first defined wavelength range, and provides first filtered light from the first reflected signal having a wavelength within the first defined wavelength range. A second filter, configured to block light from the second reflected signal, has a wavelength outside a second defined wavelength range, and provides second filtered light from the second reflected signal, having a wavelength within the second defined wavelength range; and An optical sensor is configured to generate the first electrical signal and the second electrical signal based on the first filtered light and the second filtered light, respectively.

5. The electrostatic field strength measuring device according to claim 4, characterized in that, in: The first optical signal or the second optical signal has an initial wavelength; and The first defined wavelength range or the second defined wavelength range includes a reflected wavelength equal to half of the initial wavelength.

6. The electrostatic field strength measuring device according to claim 1, characterized in that, The processor is configured to: Pixel color is determined by measurements of electrostatic field strength; and One or more pixels generate an electrostatic field strength map based on the pixel color.

7. A testing device, characterized in that, include: A ring light source includes a plurality of first photodiodes configured to emit a first light signal having a first wavelength to a target and a plurality of second photodiodes configured to emit a second light signal having a second wavelength to the target; as well as A reflection detector is disposed within and surrounded by the ring light source, and is configured to receive a first reflection signal of the first light signal reflected by the surface of the target object and a second reflection signal of the second light signal, and generate a first electrical signal and a second electrical signal based on the first reflection signal and the second reflection signal, respectively.

8. The detection device according to claim 7, characterized in that, The power of the first optical signal is equal to the power of the second optical signal.

9. The detection device according to claim 7, characterized in that, It further includes a processor configured to determine measurements of the characteristics of the target object based on the first electrical signal and the second electrical signal.

10. The detection device according to claim 9, characterized in that, The features include the electrostatic field strength at the surface of the target, the size of the surface of the target, or the distance from the surface of the reflective detector to the surface of the target.

Images