Power semiconductor module with common emitter

Abstract

The utility model relates to a power semiconductor module with a common emitter, which comprises a power semiconductor module body, the power semiconductor module body is composed of a heat dissipation substrate and at least two insulating ceramic substrates arranged on the heat dissipation substrate, each insulating ceramic substrate is provided with a silicon carbide chip and a resistor, and the silicon carbide chip is connected with the resistor. Wherein the silicon carbide chip is connected with the insulating ceramic substrate through a copper bar, the resistor is connected with the silicon carbide chip through a metal wire, and the insulating ceramic substrate and the heat dissipation substrate are respectively provided with a power terminal and a signal terminal. The utility model has the advantages of simple structure, convenient manufacturing process, short manufacturing time, better performance and the like.

Description

Technical Field

[0001] This utility model belongs to the field of power semiconductor technology and relates to a common-emitter power semiconductor module. Background Technology

[0002] With the continuous advancement of technology, electronic products are developing towards higher power and miniaturization. Traditional power electronic modules are bulky and heavy, failing to meet the high power density and lightweight requirements of fields such as electric vehicles, rail transportation, and aerospace. Silicon carbide power electronic devices, as an important future development direction for power semiconductors, possess characteristics of high frequency, high temperature, and high efficiency. However, their parasitic inductance is often relatively large, leading to larger overshoot voltages, increased losses, and poor heat dissipation in high-frequency applications, thus limiting the full potential of silicon carbide performance.

[0003] In the production process of silicon carbide devices, in order to improve the chip yield, the area of ​​a single silicon carbide chip is often smaller than that of a silicon device. This limits the current capacity of a single silicon carbide device. In practical high-current applications, multiple chips are often connected in parallel through module packaging to increase the current capacity.

[0004] However, since the current module packaging technology of silicon carbide devices still uses the traditional packaging technology of silicon devices, the bonding wire connection process used in the manufacturing process will introduce a large parasitic inductance. This will generate a relatively serious voltage overshoot and oscillation process during the high-speed switching process of silicon carbide devices. For multi-chip parallel application scenarios, there is also the problem of uneven current in parallel due to the difference in source parasitic inductance. Uneven current distribution will lead to differences in losses between different chips, reducing the reliability of the module.

[0005] To address this issue, a common-emitter power semiconductor module was designed to overcome the aforementioned problems. Utility Model Content

[0006] The purpose of this invention is to overcome the shortcomings of the existing technology and provide a common-emitter power semiconductor module with a simple and reasonable structure, convenient manufacturing process, short manufacturing time and better performance.

[0007] This utility model is achieved through the following technical solution: a common-emitter power semiconductor module, comprising a power semiconductor module body, the power semiconductor module body being composed of a heat dissipation substrate and at least two insulating ceramic substrates disposed on the heat dissipation substrate, wherein a silicon carbide chip and a resistor are mounted on each of the insulating ceramic substrates, wherein the silicon carbide chip is connected to the insulating ceramic substrate through a copper busbar, and the resistor is connected to the silicon carbide chip through a metal wire, and power terminals and signal terminals are respectively disposed on the insulating ceramic substrate and the heat dissipation substrate.

[0008] Preferably, the power terminal consists of at least two first power terminals and at least one second power terminal. The upper part of the first power terminal has an inverted L-shaped structure, and a first circular through hole is provided on the top surface of the first power terminal. The lower part of the first power terminal forks to form two bent first terminal feet with first mounting holes. The upper part of the second power terminal has a C-shaped structure, and a second circular through hole is provided on the top surface of the second power terminal. The lower part of the second power terminal forks to form two bent second terminal feet with second mounting holes. Each first power terminal is mounted on each insulating ceramic substrate through the first terminal feet and is arranged symmetrically. The second power terminal is mounted between two adjacent insulating ceramic substrates through the second terminal feet to connect the two adjacent insulating ceramic substrates.

[0009] Preferably, signal terminals are provided at the four corners of the heat dissipation substrate, and a signal bracket integrally injection molded with the signal terminal is provided at the bottom of each signal terminal, with the bottom surface of the signal bracket fixedly mounted on the heat dissipation substrate.

[0010] Preferably, the signal bracket has an S-shaped buffer structure at the lower part of the signal terminal to buffer the bottom soldering part of the signal terminal. The end of the buffer structure away from the signal terminal has two pins to facilitate soldering the signal terminal onto the heat dissipation substrate.

[0011] Preferably, the heat dissipation substrate is provided with an injection-molded shell on its outer side. The connection between the injection-molded shell and the heat dissipation substrate is fixed with sealant, which encapsulates the top surface of the heat dissipation substrate, the insulating ceramic substrate, the silicon carbide chip and the resistor. Silicon gel is filled between the injection-molded shell and the heat dissipation substrate to ensure the normal use of the semiconductor module body.

[0012] Preferably, the top surface of the injection-molded housing has protrusions corresponding to the positions of the first power terminal and the second power terminal at the middle position, and an outer groove is provided between adjacent protrusions. The protrusions have rectangular holes for the first power terminal and the second power terminal to pass through. The top surface of the injection-molded housing has mounting holes corresponding to the signal terminals on both sides. The first power terminal, the second power terminal, and the signal terminal are partially exposed after passing through the rectangular holes and the mounting holes, respectively. A nut hole corresponding to the first circular through hole and the second circular through hole is provided at the middle position of each protrusion.

[0013] Preferably, the insulating ceramic substrate consists of a first copper layer, an intermediate ceramic layer, and a second copper layer, and the first copper layer, the intermediate ceramic layer, and the second copper layer are arranged sequentially from top to bottom.

[0014] Preferably, the width of the injection-molded shell is 42mm to 48mm, the spacing between adjacent protrusions is 4mm to 8mm, and the spacing between nut holes is 4mm to 8mm.

[0015] Preferably, the copper busbar is a frame structure with multiple hollowed-out sections in the middle to facilitate the installation of silicon carbide chips. At least one end of the copper busbar is provided with a connecting block with a hook, which is engaged in a corresponding slot in the insulating ceramic substrate to ensure the stability of the copper busbar after installation.

[0016] Preferably, the injection-molded shell has a recessed area formed by the middle of both sides, and a through hole is provided in the recessed area. A corresponding mounting through hole is provided on the heat dissipation substrate to facilitate the installation of the power semiconductor module body. The recessed area can also serve as a handheld part for easy handholding.

[0017] The semiconductor module of this invention fabricates circuits in a power semiconductor module with a package width of 42-48mm. Compared with the currently used packaging structure, it has advantages such as convenient process, short manufacturing time, strong performance, and long life, effectively improving the module integration. Attached Figure Description

[0018] Figure 1 This is a schematic diagram of the overall structure of this utility model;

[0019] Figure 2 This is a schematic diagram of the main body of the power semiconductor module of this utility model;

[0020] Figure 3 This is a schematic diagram of the injection-molded shell structure in this utility model;

[0021] Figure 4 This is a schematic diagram of the copper busbar in this utility model;

[0022] Figure 5 This is a schematic diagram of the structure of the first power terminal in this utility model;

[0023] Figure 6 This is a schematic diagram of the structure of the second power terminal in this utility model;

[0024] Figure 7 This is a schematic diagram of the signal bracket in this utility model;

[0025] Figure 8 This is a schematic diagram of the signal terminal structure in this utility model. Detailed Implementation

[0026] To enable those skilled in the art to more clearly understand the purpose, technical solution and advantages of this utility model, the present utility model will be further described below in conjunction with the accompanying drawings and embodiments.

[0027] In the description of this utility model, it should be understood that the orientation or positional relationship indicated by terms such as "upper", "lower", "left", "right", "inner", "outer", "horizontal", and "vertical" are based on the orientation or positional relationship shown in the accompanying drawings and are only for the convenience of describing this utility model, and are not intended to indicate or imply that the device or component referred to must have a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0028] The present invention will now be described in detail with reference to the accompanying drawings: Figure 1-3 As shown, a common-emitter power semiconductor module includes a power semiconductor module body, which is composed of a heat dissipation substrate 9 and at least two insulating ceramic substrates 10 disposed on the heat dissipation substrate 9. The insulating ceramic substrates are reflow soldered to the heat dissipation substrate. A silicon carbide chip 11 and a resistor 12 are mounted on each of the insulating ceramic substrates 10. The silicon carbide chip 11 is connected to the insulating ceramic substrate 10 through a copper busbar 13, and the resistor 12 is connected to the silicon carbide chip 11 through a metal wire. Power terminals and signal terminals 4 are also respectively disposed on the insulating ceramic substrate 10 and the heat dissipation substrate 9.

[0029] like Figure 5-6 As shown, the power terminal consists of at least two first power terminals 5 and at least one second power terminal 6. The upper part of the first power terminal 5 has an inverted L-shaped structure, and a first circular through hole 17 is provided on the top surface of the first power terminal 5. Its lower part forks to form two bent first terminal feet 15 with first mounting holes 18. The upper part of the second power terminal 6 has a C-shaped structure, and a second circular through hole 19 is provided on the top surface of the second power terminal 6. Its lower part forks to form two bent second terminal feet 21 with second mounting holes 20. Each first power terminal 5 is mounted on each insulating ceramic substrate 10 through the first terminal feet 15 and is arranged symmetrically. The second power terminal 6 is mounted between two adjacent insulating ceramic substrates 10 through the second terminal feet 21 to connect the two adjacent insulating ceramic substrates 10.

[0030] The semiconductor module of this invention is mainly used for module packaging. The silicon carbide chip (SiC chip) and resistors are sintered onto an insulating ceramic substrate using silver paste. By using silver paste for sintering, good electrical performance connection can be achieved, ensuring stable signal transmission. The insulating ceramic substrate, copper busbar, first power terminal, second power terminal, and signal terminal are reflow soldered onto a heat dissipation substrate to avoid introducing large parasitic inductance, prevent voltage overshoot and oscillation problems, and effectively improve the reliability and integration of the module.

[0031] The forked and outwardly separated first and second terminal pins in this invention effectively prevent the force applied during installation from being transmitted to the welding points of the first and second power terminals, thus avoiding excessive force on the welding points and reducing the possibility of damage and loosening of the welding points, thereby improving the reliability and stability of the equipment.

[0032] Signal terminals 4 are respectively provided at the four corners of the heat dissipation substrate 9. Each signal terminal 4 has a signal bracket 7 integrally injection molded with the signal terminal 4 at its bottom. The bottom surface of the signal bracket 7 is fixedly installed on the heat dissipation substrate 9.

[0033] like Figure 7-8 As shown, the signal bracket 7 has an S-shaped buffer structure 16 located at the lower part of the signal terminal 4 in the middle position. This buffer structure is used to buffer the bottom welding part of the signal terminal 4, effectively preventing the force applied during installation from being transmitted to the welding part of the signal terminal. The end of the buffer structure 16 away from the signal terminal 4 has two pins 22, which are used to facilitate the welding of the signal terminal 4 onto the heat dissipation substrate 9.

[0034] The heat dissipation substrate 9 is provided with an injection-molded shell 1 on its outer side. The connection between the injection-molded shell 1 and the heat dissipation substrate 9 is fixed with sealant, which encapsulates the top surface of the heat dissipation substrate 9, the insulating ceramic substrate 10, the silicon carbide chip 11 and the resistor 12. Silicon gel is filled between the injection-molded shell 1 and the heat dissipation substrate 9 to ensure the normal use of the semiconductor module body.

[0035] After the silicone gel cures, it provides protection for the power chips inside the module, effectively preventing contamination from the external environment. Furthermore, the silicone gel has excellent insulating properties, effectively isolating external moisture and dust, preventing damage to the internal structure of the module, and extending the module's lifespan.

[0036] The top surface of the injection-molded housing 1 has protrusions 2 at the middle position corresponding to the positions of the first power terminal 5 and the second power terminal 6, respectively. An outer groove 3 is provided between adjacent protrusions 2. The protrusions 2 are provided with rectangular holes 24 for the first power terminal 5 and the second power terminal 6 to pass through. The two sides of the top surface of the injection-molded housing 1 are provided with mounting holes 23 corresponding to the signal terminals 4. The first power terminal 5, the second power terminal 6 and the signal terminals 4 are partially exposed after passing through the rectangular holes 24 and the mounting holes 23, respectively. A nut hole 8 corresponding to the first circular through hole 17 and the second circular through hole 19 is provided at the middle position of each protrusion 2.

[0037] The insulating ceramic substrate 10 consists of a first copper layer, an intermediate ceramic layer (made of Al2O3, AlN, or Si3N4 material), and a second copper layer, which are arranged sequentially from top to bottom.

[0038] The injection-molded outer shell 1 has a width of 42mm to 48mm, the spacing between adjacent protrusions 2 is 4mm to 8mm, and the spacing between nut holes 8 is 4mm to 8mm.

[0039] like Figure 4 As shown, the copper busbar 13 is a frame structure with multiple hollowed-out sections in the middle to facilitate the installation of silicon carbide chips 11. At least one end of the copper busbar 13 is provided with a connecting block 28 with a hook 14. The hook is engaged in the corresponding slot 29 in the insulating ceramic substrate 10 to ensure the stability of the copper busbar 13 after installation.

[0040] The injection-molded outer shell 1 has recessed areas 25 formed in the middle of both sides. Through holes 26 are provided in the recessed areas 25, and mounting through holes 27 corresponding to the through holes 26 are provided on the heat dissipation substrate 9. This facilitates the installation of the power semiconductor module body, and the recessed areas 25 can also serve as a handheld part for easy handholding. Example

[0041] The power module of this utility model has two insulating ceramic substrates 10, and the middle ceramic layer is made of Al2O3, AlN, or Si3N4 ceramic layer material, which can maintain the stability and performance of the structure under high temperature environment.

[0042] The intermediate ceramic layer has good corrosion resistance, resisting the erosion of chemicals such as acids and alkalis, thus extending the service life of the material; it also has high hardness and strength, providing good mechanical support and protection to prevent the material from cracking and being damaged.

[0043] In summary, this application provides a common-emitter power semiconductor module, mainly used for module packaging. It involves sintering silicon carbide chips and resistors onto an insulating ceramic substrate using silver paste, and then reflow soldering the insulating ceramic substrate, copper busbars, first power terminals, second power terminals, and signal terminals onto a heat dissipation substrate. This avoids the introduction of large parasitic inductance, prevents voltage overshoot and oscillation problems, and effectively improves the reliability and integration of the module.

[0044] The specific embodiments described herein are merely illustrative of the principles and effects of this utility model and are not intended to limit the scope of this utility model. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of this utility model. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in this utility model should still be covered by the claims of this utility model.

Claims

1. A common-emitter power semiconductor module, comprising a power semiconductor module body, characterized in that: The power semiconductor module body consists of a heat dissipation substrate (9) and at least two insulating ceramic substrates (10) disposed on the heat dissipation substrate (9). A silicon carbide chip (11) and a resistor (12) are mounted on each of the insulating ceramic substrates (10). The silicon carbide chip (11) is connected to the insulating ceramic substrate (10) by a copper busbar (13), and the resistor (12) is connected to the silicon carbide chip (11) by a metal wire. Power terminals and signal terminals (4) are also disposed on the insulating ceramic substrate (10) and the heat dissipation substrate (9), respectively.

2. The common-emitter power semiconductor module according to claim 1, characterized in that: The power terminal consists of at least two first power terminals (5) and at least one second power terminal (6). The upper part of the first power terminal (5) is inverted L-shaped, and a first circular through hole (17) is provided on the top surface of the first power terminal (5). The lower part of the first power terminal (5) is forked to form two bent first terminal feet (15) with first mounting holes (18). The upper part of the second power terminal is C-shaped, and a second circular through hole (19) is provided on the top surface of the second power terminal (6). The lower part of the second power terminal (6) is forked to form two bent second terminal feet (21) with second mounting holes (20). Each first power terminal (5) is mounted on each insulating ceramic substrate (10) through the first terminal feet (15) and is arranged symmetrically. The second power terminal (6) is mounted between two adjacent insulating ceramic substrates (10) through the second terminal feet (21) to connect the two adjacent insulating ceramic substrates (10).

3. The common-emitter power semiconductor module according to claim 1 or 2, characterized in that: Signal terminals (4) are provided at the four corners of the heat dissipation substrate (9). Each signal terminal (4) has a signal bracket (7) integrally injection molded with the signal terminal (4) at its bottom. The bottom surface of the signal bracket (7) is fixedly installed on the heat dissipation substrate (9).

4. The common-emitter power semiconductor module according to claim 3, characterized in that: The signal bracket (7) has an S-shaped buffer structure (16) located at the lower part of the signal terminal (4) for buffering the bottom welding part of the signal terminal (4). The end of the buffer structure (16) away from the signal terminal (4) has two pins (22) for conveniently welding the signal terminal (4) onto the heat dissipation substrate (9).

5. The common-emitter power semiconductor module according to claim 4, characterized in that: The heat dissipation substrate (9) is provided with an injection-molded shell (1) on the outside. The connection between the injection-molded shell (1) and the heat dissipation substrate (9) is fixed with sealant, which encloses the top surface of the heat dissipation substrate (9), the insulating ceramic substrate (10), the silicon carbide chip (11) and the resistor (12). Silicon gel is filled between the injection-molded shell (1) and the heat dissipation substrate (9) to ensure the normal use of the semiconductor module body.

6. The common-emitter power semiconductor module according to claim 5, characterized in that: The top surface of the injection-molded housing (1) is provided with a protrusion (2) corresponding to the position of the first power terminal (5) and the second power terminal (6) respectively. An outer groove (3) is provided between adjacent protrusions (2). A rectangular hole (24) is provided on the protrusion (2) for the first power terminal (5) and the second power terminal (6) to pass through. Mounting holes (23) corresponding to the signal terminal (4) are provided on both sides of the top surface of the injection-molded housing (1). The first power terminal (5), the second power terminal (6) and the signal terminal (4) are partially exposed after passing through the rectangular hole (24) and the mounting hole (23) respectively. A nut hole (8) corresponding to the first circular through hole (17) and the second circular through hole (19) is provided in the middle position of each protrusion (2).

7. The common-emitter power semiconductor module according to claim 5, characterized in that: The insulating ceramic substrate (10) is composed of a first copper layer, an intermediate ceramic layer and a second copper layer, and the first copper layer, the intermediate ceramic layer and the second copper layer are arranged sequentially from top to bottom.

8. The common-emitter power semiconductor module according to claim 6, characterized in that: The injection-molded outer shell (1) has a width of 42mm to 48mm, the spacing between adjacent protrusions (2) is 4mm to 8mm, and the hole spacing of the nut hole (8) is 4mm to 8mm.

9. The common-emitter power semiconductor module according to claim 1 or 8, characterized in that: The copper busbar (13) is a frame structure with multiple hollowed-out sections in the middle, which is used to facilitate the installation of silicon carbide chips (11). At least one end of the copper busbar (13) is provided with a connecting block (28) with a hook (14). The hook is locked in the corresponding slot (29) in the insulating ceramic substrate (10) to ensure the stability of the copper busbar (13) after installation.

10. The common-emitter power semiconductor module according to claim 6, characterized in that: The injection-molded shell (1) has a recessed area (25) formed in the middle of both sides. A through hole (26) is provided in the recessed area (25), and a mounting through hole (27) corresponding to the through hole (26) is provided on the heat dissipation substrate (9) to facilitate the installation of the power semiconductor module body. The recessed area (25) can also be used as a handheld part for easy handheld use.

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