Cleavage pad and auxiliary tool for wafer slicing

Abstract

The utility model provides a cleavage pad for wafer slicing, which comprises a body, a placement area is constructed on the body, a datum line is engraved on the placement area, a first cleavage line and / or a second cleavage line are arranged on any side of the datum line, and the first cleavage line and / or the second cleavage line intersect with the datum line. The cleavage pad for wafer slicing is especially suitable for small-scale slice sample preparation, can accurately position wafers of different sizes, can quickly find cleavage positions of the wafers, and is reasonable in overall configuration and simple and reasonable in structure. The utility model further provides an auxiliary tool provided with the cleavage pad, the surface of the wafer can be accurately marked through the cleavage ruler, the position of the cleavage surface can be found out, safe and accurate segmentation and cleavage can be carried out on the wafer, a desired sample wafer can be obtained, and the cleavage pad is small in occupied area, portable, easy to operate and flexible.

Description

Technical Field

[0001] This application belongs to the field of semiconductor manufacturing technology, and in particular relates to a cleaving pad for wafer slicing and an auxiliary tool equipped with the cleaving pad. Background Technology

[0002] With continuous development, the requirements for semiconductor chip manufacturing processes are becoming increasingly stringent. In current wafer inspection processes, wafers need to be sliced ​​for testing, with samples prepared before the relevant inspections are carried out. Currently, the industry's slicing methods are still primarily based on traditional manual cutting, with a small portion using automated equipment for slicing. However, both methods have their limitations. Traditional manual slicing methods are difficult to scale up, have low positioning accuracy during cutting, and result in significant dimensional deviations in the samples. Automated wafer slicing methods require expensive equipment, large floor space, and lack portability and flexibility. The focus of this invention is to design a standardized auxiliary tool that can adapt to the cutting of wafers of various sizes for fast and accurate slicing. Summary of the Invention

[0003] This application provides a cleaving pad for wafer slicing and an auxiliary tool equipped with the cleaving pad, addressing the technical problem of how to quickly and accurately cleave wafers of different sizes.

[0004] To solve at least one of the above-mentioned technical problems, the technical solution adopted in this application is:

[0005] A cleaving pad for wafer slicing includes a body, a placement area formed on the body, a reference line etched on the placement area, and a first cleaving line and / or a second cleaving line formed on either side of the reference line, the first cleaving line and / or the second cleaving line intersecting the reference line.

[0006] Furthermore, the placement area has a circular structure, and its center is located at the geometric center of the main body.

[0007] Furthermore, the placement area contains several concentric circles, and the baseline is located on the diameter of one of the perpendicular intersections of the concentric circles.

[0008] Furthermore, a reference mark is constructed at the intersection of the reference line and the concentric circles, and the structure of the reference mark is symmetrical with respect to the reference line.

[0009] Furthermore, the reference numeral is located on the same side of the diameter of the placement area as the first cleavage line and / or the second cleavage line.

[0010] Furthermore, the reference numerals are constructed as cuts and / or planes.

[0011] Furthermore, the angle between the first cleavage line and the reference line is 45°; the angle between the second cleavage line and the reference line is 60°.

[0012] An auxiliary tool for wafer slicing is provided, equipped with a cleaving pad as described above, and further includes a cleaving ruler and a cleaving blade. At least one guide groove is formed on one side of the cleaving ruler. The centerline of the guide groove may overlap with the reference line and / or the first cleaving line and / or the second cleaving line. Based on the intersection of the outer circle of the wafer with the reference line and / or the first cleaving line and / or the second cleaving line, the guide groove overlaps with the intersection point, and the cleaving blade is controlled to scribing along the wall of the guide groove.

[0013] Furthermore, the guide groove is constructed as a U-shaped structure with the opening facing outwards; the width of the guide groove is 3.2-4mm and the length is 3-20mm.

[0014] Furthermore, it also includes cleaving forceps. After the cleaving blade scribing lines on the wafer, the cleaving forceps are controlled to cut along the scribing lines to obtain a decomposed sample.

[0015] The cleavage pad designed in this application is particularly suitable for small-scale wafer slicing. It can accurately position wafers of different sizes and quickly locate their cleavage positions. The overall configuration is reasonable, and the structure is simple and rational. This application also proposes an auxiliary tool equipped with the cleavage pad. Using a cleavage ruler, lines can be accurately drawn on the wafer surface to find the location of the cleavage surface, and the wafer can be safely and accurately cleaved to obtain the desired sample. It occupies a small area, is portable, easy to operate, and flexible. Attached Figure Description

[0016] Figure 1 This is a schematic diagram of the structure of a cleaving pad for wafer slicing according to this application;

[0017] Figure 2 This is an enlarged structural diagram of part A in this application;

[0018] Figure 3 The crystal orientation index in this application is <100> Schematic diagram of the location of the cleavage lines on the time-delay wafer;

[0019] Figure 4 One of the crystal orientation indices in this application is <110> Schematic diagram of the location of the cleavage lines on the time-delay wafer;

[0020] Figure 5 Another crystal orientation index in this application is <110> Schematic diagram of the location of the cleavage lines on the time-delay wafer;

[0021] Figure 6 This is a schematic diagram of the cleavage ruler in this application;

[0022] Figure 7 This is a schematic diagram of the cleavage pad and cleavage ruler fitting together in this application.

[0023] In the picture:

[0024] 10. Cleavage pad; 11. Main body; 12. Placement area

[0025] 13. Baseline; 14. First cleavage line; 15. Second cleavage line

[0026] 16. Reference number 20, cleavage scale 21, guide groove Detailed Implementation

[0027] The present application will now be described in detail with reference to the accompanying drawings and specific embodiments.

[0028] This embodiment proposes a cleaving pad for wafer slicing, such as... Figure 1 As shown, the body 10 is a flat, flat structure made of soft plastic. It has a certain degree of friction, which not only does not affect the surface quality of the wafer but also allows for stable placement of the wafer without slippage during cleaving and scribing. The body 10 can be square, rectangular, or polygonal. Preferably, the body 10 is square, with identical scales on its adjacent sides to provide a dimensional range defining the placement area, and the scale range on each side is larger than the diameter of the cleaved wafer.

[0029] A placement area 12 is constructed on the body 10. The placement area 12 is located at the center of the body 10 and is built into the body 10. The placement area 12 has a circular structure and its center is located at the geometric center of the body 11. Not only does the center of the placement area 12, which is used to place the chip, overlap with the geometric center of the body 11, but it also maximizes the area of ​​the placement area 12.

[0030] A vertically intersecting baseline 13 is engraved on the placement area 12, and the baseline 13 can also be superimposed on the diameter of the placement area 12.

[0031] On either side of the baseline 13, a first cleavage line 14 and / or a second cleavage line 15 are arranged starting from the center of the placement area 12, such that the first cleavage line 14 and / or the second cleavage line 15 are intersecting the baseline 13.

[0032] Taking the vertically set baseline 13 as an example, a first cleavage line 14 and a second cleavage line 15 are provided on its left and right sides, and the first cleavage line 14 and the second cleavage line 15 are symmetrically set with respect to the baseline 13.

[0033] Preferably, the angle θ between the first cleavage line 14 and the reference line 13 is 45°; the angle β between the second cleavage line 15 and the reference line 13 is 60°.

[0034] Furthermore, within the placement area 12, several concentric circles of different diameters are arranged. These concentric circles represent wafers of different diameters commonly processed in production, such as 6-inch, 8-inch, and 12-inch wafers. Larger diameter wafers can also be represented; the concentric circles can be drawn based on the actual situation, but all are within the scope of the placement area 12. Regardless of the size of the concentric circles, they serve as the original size baseline for the wafer. The reference line 13 is located on one of the perpendicularly intersecting diameters of this set of concentric circles, facilitating quick and accurate location of the reference position.

[0035] Furthermore, in order to facilitate finding the reference position, a reference number 16 is constructed at the intersection of one of the reference lines 13 and the concentric circles. That is, the reference numbers 16 of all the concentric circles are on the same reference line, which facilitates the rapid positioning of the wafer placement.

[0036] Reference number 16 is located on the same side of the diameter of the placement area 12 as the first cleavage line 14 and / or the second cleavage line 15. In this embodiment, the reference line 13 where reference number 16 is located, the first cleavage line 14, and the second cleavage line 15 are all located in the same semicircle of the placement area 12.

[0037] like Figure 2 As shown, reference mark 16 is constructed as a notch and / or a plane; that is, on each concentric circle, at its intersection with reference line 13, a symbol identical to the mark on the wafer is set. In existing actual processing, a notch or plane is machined on the edge of the wafer to facilitate wafer positioning during processing. Therefore, on reference line 13, this reference mark 16 can be a notch, a plane, or both. Of course, the structure of reference mark 16 can be based on the marking structure on the wafer; in any case, the structure of reference mark 16 is symmetrically configured with respect to reference line 13.

[0038] Of course, within the placement area 12, with the center of the wafer as the base point and the reference line 13 as the starting line, multiple first cleaving lines 14 or second cleaving lines 15 can be provided within the placement area 12 and passing through the center of the wafer. The vertically positioned reference line 13 is 0°, and the position of the first cleaving line 14 relative to 0° is ±(45°+N×90°), where N is 0 or 1. The distribution of the first cleaving lines 14 is as follows... Figure 3 As shown. The position of the second cleavage line 15 relative to 0° is ±(N×60°), where N is 0, 1, 2, or 3. The distribution of the second cleavage line 15 is as follows. Figure 4 As shown. When baseline 13 is a cleavage line, its distribution is as follows. Figure 5 As shown.

[0039] During wafer fabrication, each crystal ingot has its own crystal orientation index. A notch needs to be machined on the surface of this ingot during wafer fabrication to facilitate positioning. Consequently, this notch is present at the edge of each wafer; it can be a V-shaped cut or a flat surface. Crystal ingots with different crystal orientation indices will result in wafers with notches located at different crystal orientation indices.

[0040] When the principal crystal orientation index of the crystal rod is <100> At that time, the crystal orientation index of the cut or plane location on the wafer obtained after processing is of two types, namely... <100> or <110> When the principal crystallographic indices of the crystal rod are <111> At that time, the crystal orientation index of the location of the cut or plane on the wafer obtained after processing is one type, which is... <110> .

[0041] For a wafer with a main crystal orientation index of... <100> Made from crystal rods, its cleavage planes have two types, as follows:

[0042] like Figure 3 As shown, the crystal orientation index for the location of a notch or plane on the wafer is... <100> When the cut or plane is aligned with the reference line 13, the position of its standard cleavage line is centered on the center of the wafer and rotated left and right by 45° + N × 90° from the 0° reference line 13 as the starting line. N can be 0 or 1. In this embodiment, the 0° reference line 13 is used as the standard, with the angle to its left being the negative angle and the angle to its right being the positive angle. Within the entire placement area 12, there are four first cleavage lines 14 at four different angles: -45°, -135°, 45°, and 135°, which serve as standard cleavage lines. Throughout the wafer, all positions along or parallel to these four first cleavage lines 14 are the locations of the cleavage surfaces of this type of wafer.

[0043] like Figure 5 As shown, the crystal orientation index for the location of a notch or plane on the wafer is... <110> When the cut or plane is aligned with the reference line 13, the position of its standard cleavage line should be centered on the center of the wafer, with the 0° reference line 13 as the starting line, rotated N×90° left and right, where N is 1 or 2. In this embodiment, the 0° reference line 13 is used as the standard, with the angle to its left being the negative angle and the angle to its right being the positive angle. Within the entire placement area 12, there are four reference lines 13 at four angles as standard cleavage lines, namely 0°, -90°, 180°, and 90°. Throughout the wafer, all positions along or parallel to these four reference lines 13 are the locations of the cleavage surfaces of this type of wafer.

[0044] like Figure 4As shown, for a wafer moving from the main crystal to the index of... <111> Made from crystal rods, its cleavage planes typically have only one type, meaning the crystal orientation index of the location of the cut or plane on the wafer is 0. <110> For this type of wafer, after aligning its cut or plane with the reference line 13, the position of its standard cleavage line should be a second cleavage line 15 rotated N×60° left and right, with the wafer's center as the center and the 0° reference line 13 as the starting line. N can be 1, 2, 3, or 4. In this embodiment, with the 0° reference line 13 as the standard, the angles to its left are negative angles, and the angles to its right are positive angles. Within the entire placement area 12, there are six second cleavage lines 15 at six different angles as standard cleavage lines: 0°, -60°, -120°, 180°, 120°, and 60°. Throughout the wafer, all positions along or parallel to these six second cleavage lines 15 are the locations of the cleavage surfaces of this type of wafer.

[0045] The cleavage pad proposed in this application is particularly suitable for placement in small-scale wafer slicing and sample preparation. It can accurately position wafers of different sizes and quickly find their cleavage positions. Based on these cleavage positions, it can be used in conjunction with other compatible tools to safely and accurately scribe and position the wafers. The structure is simple and reasonable.

[0046] An auxiliary tool for wafer slicing, equipped with the cleaving pad 10 as described above, also includes a cleaving ruler 20, a cleaving knife, and cleaving pliers (figures omitted). On the cleaving ruler 20, as shown... Figure 6 As shown, one side has a standard scale dimension, and at least one guide groove 21 is constructed on the back of the scale dimension. The guide groove 21 is a U-shaped structure with its opening facing outwards. The guide groove 21 is perpendicular to the length direction of the cleavage ruler 20, and its midline corresponds to any integer scale position or half-point scale position on the cleavage ruler 20, which facilitates dimension positioning calculation. Preferably, the horizontal width W of the guide groove 21 is 3.2-4mm, and the vertical length H is 3-20mm.

[0047] like Figure 7As shown, during cleaving, the wafer is placed in the placement area 12, and the V-groove or planar surface on the wafer is aligned with the reference number 16. Based on the characteristics of the wafer, its crystal orientation index is determined, and then the location of the cleaving line is selected based on the crystal orientation index. The cleaving ruler 20 is then taken out, and the centerline of the guide groove is aligned with the reference line 13 and / or the first cleaving line 14 and / or the second cleaving line 15, with the dimension surface of the cleaving ruler 20 perpendicular to the cleaving line along its length. The centerline of the guide groove 21 is aligned with the intersection point of the outer circle of the wafer and the reference line 13 and / or the first cleaving line 14 and / or the second cleaving line 15. The cleaving blade is then controlled to scribble along the wall of the guide groove 21 along its length H. After scribing the wafer with the cleaving blade, the cleaving forceps are controlled to cut along the scribing line to obtain the decomposed sample.

[0048] The cleavage pad designed in this application is particularly suitable for small-scale wafer slicing. It can accurately position wafers of different sizes and quickly locate their cleavage positions. The overall configuration is reasonable, and the structure is simple and rational. This application also proposes an auxiliary tool equipped with the cleavage pad. Using a cleavage ruler, lines can be accurately drawn on the wafer surface to find the location of the cleavage surface, and the wafer can be safely and accurately cleaved to obtain the desired sample. It occupies a small area, is portable, easy to operate, and flexible.

[0049] The embodiments of this application have been described in detail above. These descriptions are merely preferred embodiments and should not be construed as limiting the scope of this application. All equivalent variations and modifications made within the scope of this application should still fall within the patent coverage of this application.

Claims

1. A cleaving pad for wafer dicing, characterized by, The body is provided with a placement area, a reference line is engraved on the placement area, and a first cleavage line and / or a second cleavage line are arranged on either side of the reference line, the first cleavage line and / or the second cleavage line are arranged from the center of the placement area and cross the reference line, the angle between the first cleavage line and the reference line is 45°, and the angle between the second cleavage line and the reference line is 60°.

2. The cleaving pad of claim 1, wherein The placement area is circular, and the center of the circle is located at the geometric center of the body.

3. The cleaving pad for slicing a wafer according to claim 1 or 2, wherein A plurality of concentric circles are arranged in the placement area, and the reference line is located on the vertical intersecting diameter of one of the concentric circles.

4. The cleaving pad of claim 3, wherein A reference mark is arranged at the intersection of the reference line and the concentric circle, and the structure of the reference mark is symmetrically arranged relative to the reference line.

5. The cleaving pad of claim 4, wherein The reference mark and the first cleavage line and / or the second cleavage line are located on the same side of the diameter of the placement area.

6. The cleaving pad of claim 4 or 5, wherein The reference mark is configured as a notch and / or a plane.

7. A wafer slicing aid provided with a cleaving pad as claimed in any one of claims 1-6, characterized in that A cleaving ruler and a cleaving knife are further included, at least one guide groove is arranged on one side of the cleaving ruler, the center line of the guide groove can overlap the reference line and / or the first cleavage line and / or the second cleavage line, based on the intersection of the wafer outer circle and the reference line and / or the first cleavage line and / or the second cleavage line, the guide groove overlaps the intersection, and the cleaving knife is controlled to draw a line along the wall of the guide groove.

8. The wafer dicing aid of claim 7, wherein The guide groove is configured as a U-shaped structure with the opening facing outward, the width of the guide groove is 3.2-4mm, and the length is 3-20mm.

9. The wafer dicing aid of claim 8, wherein A cleaving clamp is further included, after the cleaving knife draws a line on the wafer, the cleaving clamp is controlled to cut along the line to obtain a decomposed sample.

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