Universal burn-in board and test system
By designing a universal aging board and using different connection hole groups to suit SI-based and SiC-based devices for high-temperature reverse bias testing, the high cost problem in the existing technology is solved, and the compatibility of various devices and cost reduction are achieved.
Patent Information
- Application Number
- CN202423025793.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-09
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2034-12-09
AI Technical Summary
The existing technology does not have an aging board that can be used for high-temperature reverse bias testing of both SiC-based devices and SI-based devices, resulting in high costs for customizing aging boards for each.
Design a universal aging board, including connection ports and multiple aging positions. Each aging position includes an aging seat, a first connection hole, a second connection hole, and a third connection hole. Different connection hole combinations are used to match SI-based devices and SiC-based devices for high-temperature reverse bias testing.
A single aging board was developed that can be used for high-temperature reverse bias testing of both SI-based and SiC-based devices, reducing testing costs.
Smart Images
Figure CN223565821U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the technical field of aging test, specifically relates to a general aging board and test system. BACKGROUND
[0002] High Temperature Reverse Bias, abbreviated as HTRB, is one of the important tests of power device reliability, and HTRB is to add power to the device under test through the aging board to realize the aging test of the device under test. The commonly used aging board mainly includes a special board and a general board. The special board is specially designed for HTRB aging test, and the general board is mainly a SI-based HTGB and HTRBS test general board. However, with the development of semiconductor power devices, in addition to SI-based devices, SIC-based devices also appear, and SIC-based devices also have the demand for aging test, but there is no aging board that can simultaneously test SIC-based devices and SI-based devices under high temperature reverse bias. Customizing aging boards for SIC-based devices and SI-based devices separately will significantly increase the cost. SUMMARY
[0003] The utility model provides a general aging board and test system, which aims to solve the problem that there is no aging board that can simultaneously test SI-based devices and SIC-based devices under high temperature reverse bias.
[0004] In a first aspect, the utility model provides a general aging board, which includes a connection port and a plurality of aging stations. Each aging station is connected to the connection port, and each aging station includes an aging seat, a first connection hole, a second connection hole, and a third connection hole. The aging seat is used to connect the device under test. The first connection hole and the third connection hole are connected to the aging seat. The second connection hole is connected to the low-voltage end of the aging station. The first connection hole is also used to connect the second connection hole or the third connection hole.
[0005] Further, the aging seat includes a first connection end, a second connection end, and a third connection end. The first connection end is connected to the first connection hole. The second connection end is connected to the high-voltage end of the aging station. The third connection end is connected to the third connection hole and the ground end of the aging station, respectively.
[0006] Further, the first connection hole and the third connection hole are jumper holes. The first connection hole is connected to the first connection end through a jumper. The third connection hole is connected to the third connection end through a jumper.
[0007] Further, the second connecting hole is a jumper hole, and the second connecting hole is connected with a low-voltage end of the aging station through a jumper.
[0008] Further, the second connecting hole is connected with a first fuse through a jumper, and the first fuse is connected with the low-voltage end.
[0009] Further, distances between the first connecting hole and the second connecting hole and distances between the third connecting holes are all the same.
[0010] Further, the second connecting end is connected with the high-voltage end through a protection assembly.
[0011] Further, the protection assembly comprises a protection resistor and a second fuse, one end of the second fuse is connected with the second connecting end, the other end of the second fuse is connected with one end of the protection resistor, and the other end of the protection resistor is connected with the high-voltage end.
[0012] Further, the fuse and the protection resistor are connected through a jumper.
[0013] In a second aspect, the utility model provides a test system, the test system includes a device to be measured and the universal aging board of any one of the above.
[0014] The utility model discloses a test system, test system includes device to be measured and universal aging board, and universal aging board includes connecting port and a plurality of aging stations, and each aging station includes aging seat, first connecting hole, second connecting hole and third connecting hole, and aging seat is used to connect device to be measured, and first connecting hole and third connecting hole all are connected with aging seat, and second connecting hole is connected with the low-voltage end of aging station, and different types of device to be measured can be adapted by connecting first connecting hole with second connecting hole or connecting first connecting hole with third connecting hole, and device to be measured can be SI base device and SIC base device, thereby realizing that the high temperature reverse bias test for SI base device and SIC base device is carried out through one aging board, and further reduce test cost. ACCURATE DRAWINGS
[0015] In order to more clearly illustrate the technical scheme of the embodiment of the utility model, the following will be briefly introduced to the drawing needed to be used in the embodiment description, and obviously, the drawing in the following description is some embodiments of the utility model, and for those skilled in the art, under the premise of not paying the creative labor, other drawings can also be obtained according to these drawings.
[0016] Figure 1 It is the structure schematic view of universal aging board provided by an embodiment of the utility model;
[0017] Figure 2is a block diagram of a general aging board provided by the first embodiment of the utility model;
[0018] Figure 3 is a block diagram of a general aging board provided by the second embodiment of the utility model;
[0019] Figure 4 is a block diagram of a general aging board provided by the third embodiment of the utility model;
[0020] Figure 5 is a block diagram of a general aging board provided by the fourth embodiment of the utility model;
[0021] Figure 6 is a principle diagram of an aging station provided by an embodiment of the utility model;
[0022] Figure 7 is a power-on principle diagram of an aging station provided by an embodiment of the utility model;
[0023] BRIEF DESCRIPTION OF DRAWINGS: 100, general aging board;10, connection port;20, aging station;21, aging seat;22, first connecting hole;23, second connecting hole;24, third connecting hole;25, first connecting end;26, second connecting end;27, third connecting end;28, protection assembly;281, protection resistor;282, second fuse;29, first fuse. DETAILED DESCRIPTION
[0024] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the utility model.
[0025] It should be understood that when used in the specification and the appended claims, the terms "comprise" and "include" indicate the presence of the described features, integers, operations, elements, and / or components, but do not exclude the presence or addition of one or more other features, integers, operations, elements, components, and / or groups thereof.
[0026] It should also be understood that the terms used herein are merely for the purpose of describing particular embodiments and are not intended to limit the present application. As used in this specification and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "and / or," as used herein, refers to and encompasses any and all possible combinations of one or more of the associated listed items.
[0027] In addition, the direction terms mentioned in the present application, such as "up", "down", "front", "back", "left", "right", "inner", "outer", "side", etc., are only the directions of the attached drawings and the use state of the product. Therefore, the direction terms used are used to illustrate and understand the present application, and are not intended to limit the present application. In addition, in the drawings, structures similar or identical in structure are denoted by the same reference numerals.
[0028] Referring to Figures 1 to 7 , Figure 1 is a structural schematic diagram of a universal aging board 100 provided by an embodiment of the present application; Figure 2 is a block schematic diagram of the universal aging board 100 provided by a first embodiment of the present application;
[0029] Figure 3 is a block schematic diagram of the universal aging board 100 provided by a second embodiment of the present application; Figure 4 is a block schematic diagram of the universal aging board 100 provided by a third embodiment of the present application; Figure 5 is a block schematic diagram of the universal aging board 100 provided by a fourth embodiment of the present application; Figure 6 is a schematic diagram of an aging station 20 provided by an embodiment of the present application; Figure 7 is a power-on schematic diagram of the aging station 20 provided by an embodiment of the present application. As shown in Figures 1 to 7 the universal aging board 100 includes a connection port 10 and a plurality of aging stations 20; each of the aging stations 20 is connected with the connection port 10, and each of the aging stations 20 includes an aging seat 21, a first connecting hole 22, a second connecting hole 23, and a third connecting hole 24, the aging seat 21 is used for connecting a device to be tested, the first connecting hole 22 and the third connecting hole 24 are connected with the aging seat 21, and the second connecting hole 23 is connected with a low-voltage end of the aging station 20, wherein the first connecting hole 22 is also used for connecting with the second connecting hole 23 or the third connecting hole 24.
[0030] Specifically, the test system can include a device under test and a universal burn-in board 100, the device under test can be an SI-based device or an SIC-based device. Wherein, the SI-based device, also known as a silicon-based device, refers to an electronic device established on the basis of silicon, and the SIC-based device, also known as a silicon carbide-based device, refers to a power electronic device manufactured using silicon carbide (SiC) material. The universal burn-in board 100 is used for high-temperature reverse bias test of the SI-based device or the SIC-based device. During the test, the user can connect the SI-based device or the SIC-based device with the universal burn-in board 100 according to the actual needs, and start the high-temperature reverse bias test after corresponding configuration.
[0031] The high-temperature reverse bias test is an important test method for evaluating the reliability of semiconductor devices, mainly used for evaluating the leakage current of semiconductor devices (such as MOSFET, IGBT, etc.) under high temperature and reverse bias conditions to expose defects related to time and stress. The device under test of the high-temperature reverse bias test can usually be the edge structure and passivation layer of various packaged diodes, triodes, field effect tubes, silicon controlled rectifiers, IGBTs and other semiconductor power devices. The test temperature of the high-temperature reverse bias test is set according to the specific device and the test standard, which can usually be 100℃, 125℃, 150℃, 175℃.
[0032] The universal burn-in board 100 is mainly used for high-temperature reverse bias test of the SI-based device or the SIC-based device, for testing the reliability of the device under test. The universal burn-in board 100 can include a connection port 10 and a plurality of burn-in sites 20, the connection port 10 is connected with each burn-in site 20, for providing power supply for the burn-in site 20. One burn-in site 20 can be connected with one device under test, for performing high-temperature reverse bias test on the device under test.
[0033] The burn-in site 20 can include a burn-in seat 21, a first connection hole 22, a second connection hole 23 and a third connection hole 24. The burn-in seat 21 is used for connecting with the device under test, facilitating the high-temperature reverse bias test of the device under test. The first connection hole 22 and the third connection hole 24 are connected with the burn-in seat 21, as the extension connection end of the burn-in seat 21. The second connection hole 23 is connected with the low-voltage end of the burn-in site 20, for providing low-voltage power supply. According to the different devices under test, the first connection hole 22 can be connected with the second connection hole 23 or the third connection hole 24, for example, the third connection hole 24 is adapted to the SI-based device, and the second connection hole 23 is adapted to the SIC-based device. Therefore, when the device under test is the SIC-based device, the first connection hole 22 is connected with the second connection hole 23, and when the device under test is the SI-based device, the first connection hole 22 is connected with the third connection hole 24.
[0034] The universal aging board 100 can include a plurality of aging stations 20, the number of aging stations 20 can be set according to actual conditions, and the specific number is not limited here. The configuration of each aging station 20 is the same, the difference is that the connection holes connected to the aging seats 21 in the aging station 20 are different for specific devices to be tested, for example, the first connection hole 22 and the second connection hole 23 are connected in part of the aging seats 21, which is used for high-temperature reverse bias test for SIC-based devices, and the first connection hole 22 and the third connection hole 24 are connected in the remaining aging seats 21, which is used for high-temperature reverse bias test for SI-based devices.
[0035] In actual use, a universal aging board 100 can be customized, the size of the universal aging board 100 is determined by the specific standard, then when the board is opened, two power supply lines are connected through copper wiring, both of which are connected with the connection port 10, and one of them is a high-voltage line, and the other is a low-voltage line, and the universal aging board 100 is also provided with a corresponding grounding end. As shown in Figure 1 Figure 1 80 aging stations 20 are contained in the universal aging board 100, each aging station 20 is connected with the high-voltage line and the grounding end, and each aging station 20 is provided with an aging seat 21, a first connection hole 22, a second connection hole 23 and a third connection hole 24. It can be understood that the specific number of aging stations 20 that can be set on a universal aging board 100 is not limited to the above 80 aging stations 20, which can be set according to actual conditions, for example, N*M aging stations 20 can be set on a universal aging board 100, where N and M are positive integers, N is the number of aging stations 20 set horizontally, and M is the number of aging stations 20 set vertically. When N is 16 and M is 5, 80 aging stations 20 can be set.
[0036] In the high temperature reverse bias test, the user can connect the devices to be tested which need to be tested by high temperature reverse bias test with the aging seat 21 of the aging station 20, and then determine whether to connect the first connecting hole 22 with the second connecting hole 23 or connect the first connecting hole 22 with the third connecting hole 24 according to the specific type of the device to be tested. For example, for a 2*2 general aging board 100, a total of 4 aging stations 20 can simultaneously perform high temperature reverse bias test for 4 devices to be tested. In the high temperature reverse bias test, the aging seat 21 of the 4 aging stations 20 is connected with the device to be tested, and then the matching connecting hole is connected according to the specific type of the device to be tested. For example, if the 4 aging stations 20 are No. 1 aging station 20, No. 2 aging station 20, No. 3 aging station 20 and No. 4 aging station 20, and the devices to be tested of No. 1 aging station 20 and No. 2 aging station 20 are SIC-based devices, and the devices to be tested of No. 3 aging station 20 and No. 4 aging station 20 are SI-based devices, then the first connecting hole 22 and the second connecting hole 23 in the aging seat 21 of No. 1 aging station 20 can be connected, the first connecting hole 22 and the second connecting hole 23 in No. 2 aging station 20 can be connected, the first connecting hole 22 and the third connecting hole 24 in the aging seat 21 of No. 3 aging station 20 can be connected, and the first connecting hole 22 and the third connecting hole 24 in the aging seat 21 of No. 4 aging station 20 can be connected. When the connection is completed, the high temperature reverse bias test is started. It can be understood that in the above example of 4 aging stations 20, the types of the devices to be tested connected by each aging station 20 can be the same or different. For example, the devices to be tested connected by No. 1 aging station 20 to No. 4 aging station 20 can be SI-based devices or SIC-based devices.
[0037] As shown in Figure 6, Figure 6 For the schematic diagram of the aging station 20, the first connecting hole 22, the second connecting hole 23 and the third connecting hole 24 can be respectively arranged on the aging station 20, Figure 6 G1 is the first connecting hole 22, VGS is the second connecting hole 23, and S1 is the third connecting hole 24. In the high temperature reverse bias test, according to the specific type of the device to be tested, the first connecting hole 22 is connected with the second connecting hole 23 or the third connecting hole 24.
[0038] As a further embodiment, the aging seat 21 comprises a first connecting end 25, a second connecting end 26 and a third connecting end 27; the first connecting end 25 is connected with the first connecting hole 22; the second connecting end 26 is connected with the high voltage end of the aging station 20; and the third connecting end 27 is respectively connected with the third connecting hole 24 and the ground end of the aging station 20.
[0039] Among them, as Figure 4As shown, the aging seat 21 can include a first connecting end 25, a second connecting end 26 and a third connecting end 27, the first connecting end 25 is used to connect with the first connecting hole 22, the second connecting end 26 is used to connect with the high voltage end of the aging station 20, that is, to connect with the high voltage line of the aging station 20, and the third connecting end 27 is used to connect with the third connecting hole 24 and the ground end respectively.
[0040] When the high temperature reverse bias test is performed, according to the specific type of the device to be tested, the first connecting hole 22 is connected with the second connecting hole 23 or the third connecting hole 24. For example, if the device to be tested is an SI-based device, the first connecting hole 22 can be connected with the third connecting hole 24, and if the device to be tested is an SIC-based device, the first connecting hole 22 can be connected with the second connecting hole 23.
[0041] As shown in the formula (1), Figure 6 Figure 6 G is the first connecting end 25, D is the second connecting end 26, and S is the third connecting end 27, wherein G is the gate end, D is the drain end, S is the source end, G1 is the first connecting hole 22, VGS is the second connecting hole 23, and S1 is the third connecting hole 24. Among them, the first connecting hole 22 is the jumper hole of the first connecting end 25, the third connecting hole 24 is the jumper hole of the third connecting end 27, and the first connecting hole 22 is connected with the first connecting end 25, and the third connecting hole 24 is connected with the third connecting end 27. When the device to be tested is an SIC-based device, the first connecting hole 22 is connected with the second connecting hole 23, that is, G1 is connected with VGS, and when the device to be tested is an SI-based device, the first connecting hole 22 is connected with the third connecting hole 24, that is, G1 is connected with S1.
[0042] As shown in the formula (1), Figure 7 Figure 7 is a power-on schematic diagram, Figure 7 wherein V1 is a high-voltage power supply, V2 is a low-voltage power supply, R1 and R2 are current-limiting protection resistors, Q is the device to be tested, and D is a switching switch. When the device to be tested is an SIC-based device, the first connecting hole 22 is connected with the second connecting hole 23, that is, G1 is connected with VGS, at this time Figure 7 wherein D is connected with the low-voltage power supply, and when the device to be tested is an SI-based device, the first connecting hole 22 is connected with the third connecting hole 24, that is, G1 is connected with S1, at this time Figure 7 wherein D is connected with Q.
[0043] As a further embodiment, the first connecting hole 22 and the third connecting hole 24 are jumper holes, the first connecting hole 22 is connected with the first connecting end 25 through a jumper, and the third connecting hole 24 is connected with the third connecting end 27 through a jumper.
[0044] The first connecting hole 22 and the third connecting hole 24 are both jumper holes, and the first connecting hole 22 is connected with the first connecting end 25, which is a jumper hole of the first connecting end 25, and the third connecting hole 24 is connected with the third connecting end 27, which is a jumper hole of the third connecting end 27, as shown in Figure 6 .
[0045] As a further embodiment, the second connecting hole 23 is a jumper hole, and the second connecting hole 23 is connected with the low-voltage end of the aging station 20 through a jumper.
[0046] The second connecting hole 23 is also a jumper hole, and is connected with the low-voltage end of the aging station 20 through a jumper, that is, the second connecting hole 23 is connected with the low-voltage power supply, and when the second connecting hole 23 is connected with the first connecting hole 22, it is used to provide the low-voltage power supply.
[0047] As a further embodiment, the second connecting hole 23 is connected with the first fuse 29 through a jumper, and the first fuse 29 is connected with the low-voltage end.
[0048] As shown in Figure 6 , Figure 6 , RG1 is the first fuse 29, and VGS is the second connecting hole 23, the second connecting hole 23 is connected with the first fuse 29 through a jumper, and the first fuse 29 is connected with the low-voltage end of the aging station 20.
[0049] As a further embodiment, the distance between the first connecting hole 22 and the second connecting hole 23 and the distance between the third connecting hole 24 are the same.
[0050] The distance between the first connecting hole 22 and the second connecting hole 23 is the same as the distance between the first connecting hole 22 and the third connecting hole 24, which can ensure the stability of the circuit. As shown in Figure 6 , the distance between the first connecting hole 22 and the second connecting hole 23, that is, the distance between G1 and VGS, and the distance between the first connecting hole 22 and the third connecting hole 24, that is, the distance between G1 and S1, the distance between G1 and VGS and the distance between G1 and S1 are the same, which can avoid signal interference on one hand, and can ensure the symmetry of the circuit, and also facilitate wiring and maintenance.
[0051] As a further embodiment, the second connecting end 26 is connected with the high-voltage end through a protection assembly 28. Further, the protection assembly 28 comprises a protection resistor 281 and a second fuse 282, one end of the second fuse 282 is connected with the second connecting end 26, the other end of the second fuse 282 is connected with one end of the protection resistor 281, the other end of the protection resistor 281 is connected with the high-voltage end. Further, the second fuse 282 is connected with the protection resistor 281 through a jumper wire.
[0052] The second connecting end 26 is connected with the high-voltage end through a protection assembly 28, the protection assembly 28 can comprise a second fuse 282 and a protection resistor 281, one end of the second fuse 282 is connected with the second connecting end 26, the other end of the second fuse 282 is connected with the protection resistor 281, the other end of the protection resistor 281 is connected with the high-voltage end. Preferably, the second fuse 282 can be connected with the protection resistor 281 through a jumper wire.
[0053] The utility model also provides a test system, the test system includes the device to be measured and any one of above-mentioned embodiment of universal ageing board 100, universal ageing board 100 includes connecting port 10 and a plurality of ageing station 20, every ageing station 20 with connecting port 10 is connected, and every ageing station 20 includes ageing seat 21, first connecting hole 22, second connecting hole 23 and third connecting hole 24, ageing seat 21 is used for connecting device to be measured, first connecting hole 22 with third connecting hole 24 all are connected with ageing seat 21, second connecting hole 23 with low voltage end of ageing station 20 is connected, wherein, first connecting hole 22 is used with second connecting hole 23 or third connecting hole 24 is connected.
[0054] Specifically, the test system can include a device to be measured and a universal ageing board 100. The device to be measured can be an SI-based device or an SIC-based device. The SI-based device, also known as a silicon-based device, refers to an electronic device based on silicon. The SIC-based device, also known as a silicon carbide-based device, refers to a power electronic device manufactured using silicon carbide (SiC) material. The universal ageing board 100 is used for high-temperature reverse bias test of the SI-based device or the SIC-based device. During the test, the user can connect the SI-based device or the SIC-based device with the universal ageing board 100 according to actual needs and start the high-temperature reverse bias test after corresponding configuration.
[0055] High temperature reverse bias test is an important test method for evaluating the reliability of semiconductor devices, mainly used to evaluate the leakage current of semiconductor devices (such as MOSFET, IGBT, etc.) under high temperature and reverse bias conditions to expose defects related to time and stress. The device to be tested in the high temperature reverse bias test can usually be the edge structure and passivation layer of various packaged diodes, triodes, field effect tubes, silicon controlled rectifiers, IGBTs and other semiconductor power devices. The test temperature of the high temperature reverse bias test is set according to the specific device and the test standard, which can usually be 100℃, 125℃, 150℃, 175℃.
[0056] The universal aging board 100 is mainly used for high temperature reverse bias test of SI-based devices or SIC-based devices for testing the reliability of the device to be tested. The universal aging board 100 can include a connection port 10 and a plurality of aging stations 20, the connection port 10 is connected with each aging station 20 for providing power supply for the aging station 20. One aging station 20 can be connected with one device to be tested for high temperature reverse bias test of the device to be tested.
[0057] The aging station 20 can include an aging seat 21, a first connection hole 22, a second connection hole 23 and a third connection hole 24. The aging seat 21 is used to connect with the device to be tested, facilitating the high temperature reverse bias test of the device to be tested. The first connection hole 22 and the third connection hole 24 are connected with the aging seat 21 as the extension connection end of the aging seat 21. The second connection hole 23 is connected with the low voltage end of the aging station 20 for providing low voltage power supply. According to the different devices to be tested, the first connection hole 22 can be connected with the second connection hole 23 or the third connection hole 24, for example, the third connection hole 24 is adapted to SI-based devices, and the second connection hole 23 is adapted to SIC-based devices, so when the device to be tested is a SIC-based device, the aging seat 21 is connected with the second connection hole 23, and when the device to be tested is an SI-based device, the aging seat 21 is connected with the third connection hole 24.
[0058] The universal aging board 100 can include a plurality of aging stations 20, the number of aging stations 20 can be set according to the actual situation, and the specific number is not limited here. The configuration of each aging station 20 is the same, the difference is that for specific devices to be tested, the connection hole connected with the aging seat 21 in the aging station 20 is different, for example, the first connection hole 22 and the second connection hole 23 in part of the aging seat 21 are connected, which is used for high temperature reverse bias test of SIC-based devices, and the first connection hole 22 and the third connection hole 24 in the remaining aging seat 21 are connected, which is used for high temperature reverse bias test of SI-based devices.
[0059] In actual use, a general aging board 100 can be customized according to specific standards, and then two power supply lines are overlaid with copper wiring when the board is opened, both of which are connected with the connection port 10, and one of them is a high-voltage line, and the other is a low-voltage line. At the same time, a corresponding grounding terminal is also provided on the general aging board 100. As shown in Figure 1 Figure 1 80 aging sites 20 are contained in the general aging board 100, each of which is connected with the high-voltage line and the grounding terminal, and each of which is provided with an aging seat 21, a first connecting hole 22, a second connecting hole 23 and a third connecting hole 24. It can be understood that the specific number of aging sites 20 that can be provided on a general aging board 100 is not limited to the above-mentioned 80 aging sites 20, and it can be set according to actual conditions, for example, N*M aging sites 20 can be provided on a general aging board 100, wherein N and M are both positive integers, N is the number of aging sites 20 arranged horizontally, and M is the number of aging sites 20 arranged vertically. When N is 16 and M is 5, 80 aging sites 20 can be provided.
[0060] In the high temperature reverse bias test, the user can connect the device to be tested which needs to be tested by high temperature reverse bias test with the aging seat 21 of the aging station 20, and then determine whether to connect the first connecting hole 22 with the second connecting hole 23 or connect the first connecting hole 22 with the third connecting hole 24 according to the specific type of the device to be tested. For example, for a 2*2 general aging board 100, a total of 4 aging stations 20 can simultaneously perform high temperature reverse bias test for 4 devices to be tested, and in the high temperature reverse bias test, the aging seat 21 of the 4 aging stations 20 is connected with the device to be tested, and then the matching connecting hole is connected according to the specific type of the device to be tested. For example, if the 4 aging stations 20 are No. 1 aging station 20, No. 2 aging station 20, No. 3 aging station 20 and No. 4 aging station 20, and the devices to be tested of No. 1 aging station 20 and No. 2 aging station 20 are SIC-based devices, and the devices to be tested of No. 3 aging station 20 and No. 4 aging station 20 are SI-based devices, then the first connecting hole 22 and the second connecting hole 23 in the aging seat 21 of No. 1 aging station 20 can be connected, the first connecting hole 22 and the second connecting hole 23 in No. 2 aging station 20 can be connected, the first connecting hole 22 and the third connecting hole 24 in the aging seat 21 of No. 3 aging station 20 can be connected, and the first connecting hole 22 and the third connecting hole 24 in the aging seat 21 of No. 4 aging station 20 can be connected, and then the high temperature reverse bias test is started. It can be understood that in the above example of 4 aging stations 20, the types of the devices to be tested connected by each aging station 20 can be the same or different, for example, the devices to be tested connected by No. 1 aging station 20 to No. 4 aging station 20 can be SI-based devices or SIC-based devices.
[0061] As shown in Figure 6, Figure 6 The schematic diagram of the aging station 20 can be provided with the first connecting hole 22, the second connecting hole 23 and the third connecting hole 24, Figure 6 G1 is the first connecting hole 22, VGS is the second connecting hole 23, and S1 is the third connecting hole 24. In the high temperature reverse bias test, according to the specific type of the device to be tested, the first connecting hole 22 is connected with the second connecting hole 23 or the third connecting hole 24.
[0062] The utility model discloses a general aging board and test system, can realize to SI-based device and SIC-based device's high temperature reverse bias test through a general aging board, thereby reduce the cost.
[0063] The above merely describes a specific implementation of the present application, but the protection scope of the present application is not limited thereto, and any skilled person in the art can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present application, and these modifications or replacements should be encompassed within the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims
1. A universal aging board, characterized in that, include: Connection port; Multiple aging stations are provided, each of which is connected to the connection port. Each aging station includes an aging base, a first connection hole, a second connection hole, and a third connection hole. The aging base is used to connect the device under test. The first connection hole and the third connection hole are both connected to the aging base. The second connection hole is connected to the low-voltage end of the aging station. The first connection hole is also used to connect to either the second connection hole or the third connection hole.
2. The universal aging board according to claim 1, characterized in that, The aging base includes a first connecting end, a second connecting end, and a third connecting end; The first connecting end is connected to the first connecting hole; The second connection end is connected to the high-voltage end of the old chemical level; The third connection terminal is connected to the third connection hole and the grounding terminal of the old chemical level, respectively.
3. The universal aging board according to claim 2, characterized in that, Both the first connecting hole and the third connecting hole are jumper holes. The first connecting hole is connected to the first connecting end via a jumper, and the third connecting hole is connected to the third connecting end via a jumper.
4. The universal aging board according to claim 1, characterized in that, The second connection hole is a jumper hole, and the second connection hole is connected to the low-voltage end of the old chemical station through a jumper.
5. The universal aging board according to claim 4, characterized in that, The second connection hole is connected to the first fuse via a jumper wire, and the first fuse is connected to the low-voltage terminal.
6. The universal aging board according to claim 1, characterized in that, The distance between the first connecting hole and the second connecting hole, as well as the distance between the third connecting hole, are all the same.
7. The universal aging board according to claim 2, characterized in that, The second connection terminal is connected to the high-voltage terminal via a protection component.
8. The universal aging board according to claim 7, characterized in that, The protection component includes a protection resistor and a second fuse. One end of the second fuse is connected to the second connection terminal, and the other end of the second fuse is connected to one end of the protection resistor. The other end of the protection resistor is connected to the high-voltage terminal.
9. The universal aging board according to claim 8, characterized in that, The second fuse is connected to the protection resistor via a jumper wire.
10. A testing system, characterized in that, Includes the device under test and the universal aging board as described in any one of claims 1-9.