Integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip
By integrating a four-channel wavelength demultiplexing germanium-silicon photodiode receiver array chip, the problems of high cost, low production efficiency and low yield in the existing technology have been solved, achieving cost reduction and efficiency improvement.
Patent Information
- Application Number
- CN202423233135.0
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2025-11-18
- Estimated Expiration
- 2034-12-26
AI Technical Summary
The existing 400G FR4 coarse wavelength splitter module uses MUX with optical waveguide technology and discrete photodiode arrays, which leads to problems such as high cost, low production efficiency and low yield.
An integrated four-channel wavelength division multiplexer and photodiode array are used, employing silicon photonic monolithic integration technology to integrate a four-channel wavelength division multiplexer and a photodiode array on a single silicon chip, replacing traditional optical waveguide technology.
This significantly reduced the cost of optical modules and improved production efficiency and yield.
Smart Images
Figure CN223567635U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application relates to the technical field of optical modules, in particular to an integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip. BACKGROUND
[0002] The existing 400G FR4 coarse wavelength division optical module uses a MUX of an optical waveguide technology and a separate photodiode array, and the scheme has problems of high cost, low production efficiency and yield. SUMMARY
[0003] The application aims to provide an integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip to solve the problems of high cost, low production efficiency and yield of the existing 400G FR4 coarse wavelength division optical module using a MUX of an optical waveguide technology and a separate photodiode array.
[0004] To achieve the above-mentioned purpose, the application provides an integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip, which comprises an optical input port I1, a wavelength division multiplexer, a photodiode PD1, a photodiode PD2, a photodiode PD3 and a photodiode PD4, wherein,
[0005] The optical input port I1 is connected with an optical input end of the wavelength division multiplexer, a first optical output end of the wavelength division multiplexer is connected with an optical receiving end of the photodiode PD1, a second optical output end of the wavelength division multiplexer is connected with an optical receiving end of the photodiode PD2, a third optical output end of the wavelength division multiplexer is connected with an optical receiving end of the photodiode PD3, and a fourth optical output end of the wavelength division multiplexer is connected with an optical receiving end of the photodiode PD4.
[0006] Optionally, the electrical output end of the photodiode PD1 is connected with a PD1+ end and a PD1- end arranged on the chip.
[0007] Optionally, the electrical output end of the photodiode PD2 is connected with a PD2+ end and a PD2- end arranged on the chip.
[0008] Optionally, the electrical output end of the photodiode PD3 is connected with a PD3+ end and a PD3- end arranged on the chip.
[0009] Optionally, the electrical output end of the photodiode PD4 is connected with a PD4+ end and a PD4- end arranged on the chip.
[0010] Optionally, the optical input port I1 is an edge coupler arranged on the chip.
[0011] The application has the following advantages:
[0012] Compared with the prior art, the integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip is suitable for a 400G FR4 coarse wavelength division optical module, uses silicon photon monolithic integration technology, integrates a four-channel wavelength division multiplexer (MUX) and a four-channel photodiode (PD) array on a silicon-based chip, replaces the MUX using optical waveguide technology and the separated photodiode array in the current traditional scheme, significantly reduces the cost of the optical module, and improves production efficiency and yield. BRIEF DESCRIPTION OF DRAWINGS
[0013] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the embodiments or the prior art description will be briefly introduced below. Obviously, the drawings in the following description are only exemplary, and other drawings can be derived from the provided drawings without creative labor for those skilled in the art.
[0014] Figure 1 A circuit structure block diagram of an integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip is provided for at least one embodiment of the present application. DETAILED DESCRIPTION
[0015] The embodiments of the present application will be described below by specific specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present application from the content disclosed in the specification. Obviously, the described embodiments are part of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.
[0016] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application. Unless otherwise explicitly specified and limited, the terms "set", "mount", "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be the communication between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0017] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as there is no conflict.
[0018] The embodiment of the present application provides an integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip, which refers to Figure 1 , comprising:
[0019] The light input port I1, the wavelength division multiplexer, the photodiode PD1, the photodiode PD2, the photodiode PD3, and the photodiode PD4, wherein
[0020] The light input port I1 is connected with the light input end of the wavelength division multiplexer, the first light output end of the wavelength division multiplexer is connected with the light receiving end of the photodiode PD1, the second light output end of the wavelength division multiplexer is connected with the light receiving end of the photodiode PD2, the third light output end of the wavelength division multiplexer is connected with the light receiving end of the photodiode PD3, and the fourth light output end of the wavelength division multiplexer is connected with the light receiving end of the photodiode PD4.
[0021] In some embodiments, the electrical output end of the photodiode PD1 is connected with the PD1+ end and the PD1- end arranged on the chip respectively, the electrical output end of the photodiode PD2 is connected with the PD2+ end and the PD2- end arranged on the chip respectively, the electrical output end of the photodiode PD3 is connected with the PD3+ end and the PD3- end arranged on the chip respectively, and the electrical output end of the photodiode PD4 is connected with the PD4+ end and the PD4- end arranged on the chip respectively.
[0022] Specifically, the wavelength division multiplexer, that is, Figure 1 DeMUX, refers to an optical wavelength division multiplexer, which functions to split one optical signal into four optical signals.
[0023] In some embodiments, the light input port I1 is an edge coupler arranged on the chip.
[0024] In conclusion, compared with the prior art, the integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip provided by the present application is applicable to a 400G FR4 coarse wavelength division optical module, uses a silicon photon monolithic integration technology, integrates a four-channel wavelength division multiplexer (MUX) and a four-channel photodiode (PD) array on a silicon-based chip, replaces the MUX using an optical waveguide technology and a separate photodiode array in the current traditional scheme, significantly reduces the cost of the optical module, and improves the production efficiency and yield.
[0025] Note that, unless otherwise explicitly stated, all features disclosed in this specification (including any appended claims, abstract, and drawings) may be replaced by alternative features for achieving the same, equivalent, or similar purpose. Therefore, unless explicitly stated otherwise, each disclosed feature is merely one example of a set of equivalent or similar features. Where used, "further," "preferably," "even further," and "more preferably" are simple starting points for describing another embodiment based on the foregoing embodiments, the combination of which with the foregoing embodiments constitutes the complete configuration of another embodiment. Any combination of several "further," "preferably," "even further," or "more preferably" settings following the same embodiment constitutes yet another embodiment.
[0026] In the implementation of functions and steps, the corresponding functions and steps in the various embodiments may occur in a different order than those shown. For example, two consecutive functions and steps may actually be executed or implemented substantially in parallel, and they may sometimes be executed or implemented in reverse order, depending on the functions involved.
[0027] Although this application has been described in detail above with general descriptions and specific embodiments, some modifications or improvements can be made to it, which will be obvious to those skilled in the art. Therefore, all such modifications or improvements made without departing from the spirit of this application fall within the scope of protection claimed in this application.
Claims
1. An integrated four-channel wavelength division demultiplexed germanium-silicon photodiode receiver array chip, comprising: Comprising: an optical input port I1, a wavelength division multiplexer, a photodiode PD1, a photodiode PD2, a photodiode PD3, a photodiode PD4, wherein, the optical input port I1 is connected to an optical input end of the wavelength division multiplexer, a first optical output end of the wavelength division multiplexer is connected to an optical receiving end of the photodiode PD1, a second optical output end of the wavelength division multiplexer is connected to an optical receiving end of the photodiode PD2, a third optical output end of the wavelength division multiplexer is connected to an optical receiving end of the photodiode PD3, and a fourth optical output end of the wavelength division multiplexer is connected to an optical receiving end of the photodiode PD4.
2. The integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip according to claim 1, wherein, electrical output ends of the photodiode PD1 are respectively connected to a PD1+ end and a PD1- end arranged on the chip.
3. The integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip according to claim 1, wherein, electrical output ends of the photodiode PD2 are respectively connected to a PD2+ end and a PD2- end arranged on the chip.
4. The integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip according to claim 1, wherein, electrical output ends of the photodiode PD3 are respectively connected to a PD3+ end and a PD3- end arranged on the chip.
5. The integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip according to claim 1, wherein, electrical output ends of the photodiode PD4 are respectively connected to a PD4+ end and a PD4- end arranged on the chip.
6. The integrated four-channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip according to claim 1, wherein, the optical input port I1 is an edge coupler arranged on the chip.