Monocrystalline silicon water-guided laser processing system based on dual support

Abstract

The utility model provides a monocrystalline silicon water-guided laser processing system based on double support. The monocrystalline silicon water-guided laser processing system comprises a laser; a spectroscope; a focus lens; a water guide processing head; the monocrystalline silicon wafer is subjected to water-guided laser cutting processing through water jet; transparent glass which is attached to the monocrystalline silicon wafer from the bottom direction, is integrated with the monocrystalline silicon wafer, and supports the monocrystalline silicon wafer; the clamp comprises an upper clamp and a lower clamp which are respectively used for clamping from the upper surface of the monocrystalline silicon wafer and the lower surface of the transparent glass; and a buffer layer between the upper jig and the upper surface of the monocrystalline silicon wafer. According to the utility model, the high-transmittance glass is used as a bottom support material, so that effective support is provided, laser in the processing process is dissipated, the monocrystalline silicon is prevented from being damaged, edge breakage and cracks caused by water flow impact are reduced, and the quality of monocrystalline silicon water-guided laser processing is improved. Meanwhile, the elastic gasket is additionally arranged on the contact surface of the clamp and the monocrystalline silicon wafer for buffering and protection, so that the surface quality of a processed finished product is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to water guide laser processing technical field, more particularly to a kind of single crystal silicon water guide laser processing system based on double support. BACKGROUND

[0002] Single crystal silicon is widely used in electronics, photovoltaics, optics and MEMS fields as important semiconductor material, and its excellent electrical, optoelectronic and mechanical properties make it a core component. Single crystal silicon processing usually adopts traditional methods such as mechanical processing, laser processing and electrical discharge machining, but these methods have certain limitations in efficiency, accuracy and material protection.

[0003] Water guide laser processing can effectively reduce the heat affected zone, avoid thermal cracks and improve processing accuracy by combining the advantages of water jet and laser beam, and can be applied to the processing of high-hardness and brittle materials such as single crystal silicon. However, in the existing water guide laser processing design, the generated water pressure can cause the edge of the silicon wafer to crack or produce edge collapse, which damages the surface quality of the single crystal silicon. SUMMARY

[0004] The utility model aims at providing a kind of single crystal silicon water guide laser processing system based on double support, by high light transmission glass as bottom support material, it provides effective support, also can make that laser dissipates in processing process, prevent damage to single crystal silicon, reduce the edge collapse and crack generated by water flow impact, improve the quality of single crystal silicon water guide laser processing.

[0005] In further embodiments, an elastic gasket is installed on the contact surface of the clamp and the single crystal wafer to provide cushioning and protection, preventing the wafer from being scratched.

[0006] According to the first aspect of the utility model, a single crystal silicon water guide laser processing system based on double support is proposed, comprising:

[0007] A laser;

[0008] A beam splitter;

[0009] A focusing mirror;

[0010] A water guide processing head for coupling and emitting water jet for processing by light beam and water beam;

[0011] A single crystal wafer located below the water guide processing head, which is subjected to water guide laser cutting processing by the water jet;

[0012] Transparent glass is attached to the single crystal wafer from the bottom direction, forming an integral whole with the single crystal wafer and supporting the single crystal wafer from the bottom;

[0013] The clamp comprises an upper clamp and a lower clamp, which clamp the upper surface of the single crystal silicon wafer and the lower surface of the transparent glass, respectively; and

[0014] A buffer layer is arranged between the upper clamp and the upper surface of the single crystal silicon wafer.

[0015] In a further embodiment, the transparent glass is made of silicate glass or organic glass.

[0016] In a further embodiment, the cross-sectional size of the transparent glass is larger than that of the single crystal silicon wafer.

[0017] In a further embodiment, the thickness of the transparent glass is greater than or equal to that of the single crystal silicon wafer.

[0018] In a further embodiment, the clamp clamps the transparent glass and the single crystal silicon wafer in a multi-point positioning mode.

[0019] In a further embodiment, the buffer layer is an elastic gasket with a thickness of 0.1-0.5 mm.

[0020] In a further embodiment, the elastic gasket is made of one of a rubber gasket, a polyurethane gasket, and a plastic foamed gasket.

[0021] In a further embodiment, the single crystal silicon water guide laser processing system is provided with a CCD camera, which is used to capture images of the cutting area at a set sampling frequency, thereby obtaining the processing area images.

[0022] In a further embodiment, the CCD camera is connected to a control system, which controls the sampling frequency to be one frame of image per 0.1 mm movement of the water guide processing head, and transmits the image to the control system.

[0023] The single crystal silicon water guide laser processing system based on double support according to the embodiment of the utility model can effectively solve the problem of surface cracking caused by water pressure, can reduce the impact force of water flow and water pressure on the surface of single crystal silicon, and can avoid cracks or cracking of brittle materials caused by direct action of water flow in the processing process. On the one hand, the bottom support of the glass can help to reduce the thermal stress caused by the sudden temperature drop in the cooling process, reduce the risk of crack generation, and prevent surface cracking caused by uneven cooling by uniformly distributing the cooling pressure. At the same time, the glass support provides a laser dispersion effect, prevents damage to the single crystal silicon, ensures higher processing precision and quality, and is particularly suitable for high-precision single crystal silicon laser processing, avoids surface damage caused by water pressure and thermal stress, and improves the overall processing performance. At the same time, the support provided by the bottom glass can improve the stability of the silicon wafer during the processing process, avoid uneven cooling or deformation of the surface, and thus improve the processing precision and surface quality.

[0024] Further, the elastic gasket installed on the contact surface of the clamp and the single crystal wafer can provide buffering and protection, prevent the single crystal wafer from being scratched, and provide the surface quality of the single crystal silicon water to laser processing.

[0025] It should be understood that all combinations of the foregoing concepts and additional concepts described in greater detail below can be seen as part of the utility model subject matter of the present disclosure as long as such concepts are not mutually contradictory. In addition, all combinations of the claimed subject matter are considered part of the utility model subject matter of the present disclosure.

[0026] The foregoing and other aspects, embodiments and features of the present teachings can be more fully understood from the following description taken in conjunction with the accompanying drawings. Other aspects, features, and / or advantages of the present utility model will become apparent from the description that follows, especially when taken in conjunction with the drawings. Embodiments of the present utility model will now be described, by way of example only, with reference to the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0027] The accompanying drawings are not intended to be drawn to scale. In the drawings, each same or like component will be denoted by the same reference signs throughout the several views. For the purpose of clarity, not every component can be marked in every drawing. Embodiments of various aspects of the present utility model will now be described by way of example with reference to the accompanying drawings.

[0028] Figure 1 is a schematic view of a single crystal silicon water guide laser processing system based on double support according to an embodiment of the utility model.

[0029] Figure 2This is a schematic diagram of the positioning and clamping of a fixture in a single-crystal silicon water-guided laser processing system based on dual support, according to an embodiment of the present invention.

[0030] Figure 3 and Figure 4 These are schematic diagrams showing the processing results of a single-crystal silicon wafer using the single-crystal silicon water-guided laser processing system of this utility model and the processing results of a traditional processing method. Detailed Implementation

[0031] To better understand the technical content of this utility model, specific embodiments are provided below in conjunction with the accompanying drawings.

[0032] Various aspects of the present invention are described in this disclosure with reference to the accompanying drawings, which illustrate numerous illustrative embodiments. The embodiments disclosed herein are not necessarily intended to include all aspects of the present invention. It should be understood that the various concepts and embodiments described above, as well as those described in more detail below, can be implemented in any of many ways, because the concepts and embodiments disclosed herein are not limited to any particular implementation. Furthermore, some aspects of the present invention can be used alone or in any suitable combination with other aspects disclosed herein.

[0033] Combination Figure 1 , Figure 2 As shown, the single-crystal silicon water-guided laser processing system based on dual support according to an embodiment of the present invention includes a laser 1, a beam splitter 2, a focusing lens 3, a water-guided processing head 4, a single-crystal silicon wafer 10 to be processed, a transparent glass 20, a fixture 30, and a control system.

[0034] Combined with appendix Figure 1 As shown, the water-guided processing head 4 is configured to emit a water jet 5 through coupling of a light beam and a water beam to perform water-guided laser cutting on a single-crystal silicon wafer 10 located below the water-guided processing head 4.

[0035] The transparent glass 20 can be made of silicate glass or plexiglass, and is attached to the monocrystalline silicon wafer 10 from the bottom, forming an integral part with the monocrystalline silicon wafer 10 and supporting the monocrystalline silicon wafer 10 from the bottom.

[0036] As shown in the attached figure, the cross-sectional dimensions of the transparent glass 20 are larger than those of the monocrystalline silicon wafer 10, in order to form an effective and stable bottom support and alleviate thermal stress.

[0037] like Figure 2 As shown, the clamp 30 includes an upper clamp 31 and a lower clamp 32, which clamp the monocrystalline silicon wafer 10 from the upper surface and the transparent glass 20 from the lower surface, respectively.

[0038] In particular, the buffer layer 33 is arranged between the upper clamp 31 and the upper surface of the monocrystalline silicon wafer 10, which plays a protective and buffering role and prevents the silicon wafer from being scratched.

[0039] As an optional embodiment, the thickness of the transparent glass 20 is greater than or equal to the thickness of the monocrystalline silicon wafer 10.

[0040] As a preferred embodiment, the light transmittance of the transparent glass 20 is greater than or equal to 90%.

[0041] The clamp 30 adopts a multi-point positioning mode to clamp the transparent glass 20 and the monocrystalline silicon wafer 10.

[0042] As an optional embodiment, the buffer layer is an elastic gasket with a thickness of 0.1-0.5 mm.

[0043] The elastic gasket is one of a rubber gasket, a polyurethane gasket, and a plastic foamed gasket (for example, a PE foamed material gasket, an EVA gasket, etc.).

[0044] In combination with Figure 1 As shown in the embodiment, the monocrystalline silicon water guide laser processing system is provided with a CCD camera 8 for capturing and shooting the cutting area at a set sampling frequency to obtain a processing area image.

[0045] The CCD camera 8 is connected to the control system of the monocrystalline silicon water guide laser processing system, and the control system controls the sampling frequency to be one frame of image per 0.1 mm movement of the water guide processing head 4, and transmits the image to the control system.

[0046] In combination with Figure 3 As shown in the embodiment, the processing of the monocrystalline silicon wafer by the monocrystalline silicon water guide laser processing system of the foregoing embodiment of the utility model can be seen that the cutout is smooth and free of burrs, cracks, notches and other defects, and compared with Figure 4 As shown in the processing result of the conventional processing process of the monocrystalline silicon wafer, the cutout edge transition is not smooth and has a collapse defect. It can be seen that by the monocrystalline silicon water guide laser processing system provided by the utility model, the elastic buffer protection between the bottom glass city of the monocrystalline silicon and the clamp is designed and optimized, which can significantly reduce the impact of the water jet on the brittle monocrystalline silicon, improve the processing precision and stability, and improve the surface quality of the finished product processing.

[0047] Although the utility model has disclosed as above with preferred embodiments, it is not used to limit the utility model. Those skilled in the art without departing from the spirit and scope of the utility model can make various changes and decorations. Therefore, the protection scope of the utility model shall be subject to the definition of the claims.

Claims

1. A single-crystal silicon water-guided laser processing system based on dual support, characterized in that, include: Laser (1); Beam splitter (2); Focusing lens (3); A water-guided machining head (4) is used to eject a water jet (5) through coupling of a beam and a water jet. The monocrystalline silicon wafer (10) located below the water-guided processing head (4) is subjected to water-guided laser cutting via the water jet (5); A transparent glass (20) is attached to the monocrystalline silicon wafer (10) from the bottom direction, forming an integral part with the monocrystalline silicon wafer (10) and supporting the monocrystalline silicon wafer (10) from the bottom; The clamp (30), including an upper clamp (31) and a lower clamp (32), clamps the monocrystalline silicon wafer (10) from the upper surface and the transparent glass (20) from the lower surface, respectively; and A buffer layer (33) is disposed between the upper clamp (31) and the upper surface of the monocrystalline silicon wafer (10).

2. The single-crystal silicon water-guided laser processing system based on dual support according to claim 1, characterized in that, The transparent glass (20) is made of silicate glass or plexiglass.

3. The single-crystal silicon water-guided laser processing system based on dual support according to claim 1, characterized in that, The cross-sectional dimensions of the transparent glass (20) are larger than those of the monocrystalline silicon wafer (10).

4. The single-crystal silicon water-guided laser processing system based on dual support according to claim 1, characterized in that, The thickness of the transparent glass (20) is greater than or equal to the thickness of the monocrystalline silicon wafer (10).

5. The single-crystal silicon water-guided laser processing system based on dual support according to claim 1, characterized in that, The clamp (30) uses a multi-point positioning method to clamp the transparent glass (20) and the monocrystalline silicon wafer (10).

6. The single-crystal silicon water-guided laser processing system based on dual support according to claim 1, characterized in that, The buffer layer (33) is an elastic pad with a thickness of 0.1 to 0.5 mm.

7. The single-crystal silicon water-guided laser processing system based on dual support according to claim 6, characterized in that, The elastic gasket is one of the following: rubber gasket, polyurethane gasket, or plastic foam gasket.

8. The single-crystal silicon water-guided laser processing system based on dual support according to claim 1, characterized in that, The single-crystal silicon water-guided laser processing system is equipped with a CCD camera (8) for capturing images of the cutting area at a set sampling frequency to obtain images of the processing area.

9. The single-crystal silicon water-guided laser processing system based on dual support according to claim 8, characterized in that, The CCD camera (8) is connected to the control system. The control system controls the sampling frequency so that the water guide processing head (4) moves 0.1 mm to capture one frame of image and transmits the image to the control system.

10. The single-crystal silicon water-guided laser processing system based on dual support according to any one of claims 1-9, characterized in that, The light transmittance of the transparent glass (20) is above 90%.

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