Temperature control device and semiconductor device
By using a temperature control device with heating and insulation components in the semiconductor process chamber, the problem of byproduct aggregation forming particle defects in the etching process is solved, thereby improving device quality and equipment reliability.
Patent Information
- Application Number
- CN202520269347.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-19
- Publication Date
- 2025-11-21
- Estimated Expiration
- 2035-02-19
AI Technical Summary
In semiconductor etching processes, byproducts tend to accumulate at the edge of the process chamber, forming particle defects that lead to device defects and equipment failures. Existing technologies struggle to effectively reduce this probability.
A temperature control device including heating and insulation components is used. The heating components heat the wafer entry and exit channels and surrounding areas to keep byproducts in a gaseous state. Combined with the insulation components, heat transfer is reduced, thus lowering the probability of particle defect formation.
It effectively reduces the probability of byproducts accumulating in the edge area of the process chamber to form particle defects, improves the quality and performance of semiconductor devices, reduces equipment failures, and reduces the impact on the external ambient temperature.
Smart Images
Figure CN223582387U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The embodiment of the utility model relates to the field of semiconductor manufacturing, especially to a temperature control device and a semiconductor equipment. BACKGROUND
[0002] The semiconductor equipment is the equipment for making chips, with the rapid growth of the semiconductor integrated circuit (IC) industry, the semiconductor technology continuously advances to smaller process nodes under the driving of Moore's law, so that the integrated circuit develops to smaller size, higher circuit precision and higher circuit complexity, and the semiconductor equipment has become the core for the advanced process chip to break through.
[0003] In the semiconductor process, the etching process is a common removal process and an important step in the patterning process. Generally, in the etching process, the etching material and the etching material on the target structure are chemically reacted to remove the etching material.
[0004] However, when developing new processes and new equipment to solve the process, new process problems often occur, for example: new by-products are generated, which can more easily adhere to the edge area of the process chamber, causing particles formed by the by-products to fall on the wafer or in the process chamber, thereby causing particle defects in the semiconductor device, and thus affecting the yield of the semiconductor device, and also easily causing the semiconductor equipment to malfunction (such as equipment downtime, etc.), or even scrap.
[0005] How to reduce the probability of generating particle defects in the etching process has become a problem that needs to be solved at present. UTILITY MODEL CONTENT
[0006] The problem solved by the embodiment of the utility model is to provide a temperature control device and a semiconductor equipment to reduce the probability of generating particle defects in the process (such as etching process).
[0007] To solve the above problems, the embodiment of the utility model provides a temperature control device for being arranged in a wafer in-out passage of a process chamber, or for being detachably arranged on an outer sidewall of the process chamber on the side of the wafer in-out passage, comprising: a heating assembly; a heat insulation assembly, arranged adjacent to the side of the heating assembly along the wafer in-out direction; a through slot, penetrating the heat insulation assembly and the heating assembly along the wafer in-out direction, the through slot being used for passing the wafer through the temperature control device.
[0008] Optionally, the heating assembly and the heat insulation assembly both surround the through slot.
[0009] Optionally, the heating assembly comprises a first frame and a heating component arranged in the first frame.
[0010] Optionally, the first frame comprises a first surface facing one side of the heat insulation assembly, and a second surface opposite to the first surface, wherein a plurality of heat dissipation holes are arranged in the second surface, and the heat dissipation holes are blind holes.
[0011] Optionally, the heat insulation assembly comprises a second frame arranged on the first surface of the first frame, and a heat insulation module arranged in the second frame.
[0012] Optionally, the first frame and the second frame constitute a frame structure, wherein the width of the first frame accounts for 20% to 45% of the width of the frame structure, and the width of the second frame accounts for 55% to 80% of the width of the frame structure.
[0013] Optionally, the first frame and the second frame constitute a frame structure, wherein the wall thickness of the frame structure is 1 cm to 10 cm.
[0014] Optionally, the heating assembly comprises an electric heating pipe.
[0015] Correspondingly, the utility model embodiment further provides a semiconductor equipment, including: process chamber, the process chamber includes wafer access channel;The temperature control device of any one embodiment of the utility model is arranged in the wafer access channel of process chamber, or, detachably arranged on the outside wall of process chamber on the side of wafer access channel.
[0016] Optionally, in the case that the temperature control device is arranged in the wafer access channel of process chamber, the temperature control device is flush with the side wall of the process chamber.
[0017] Optionally, the semiconductor equipment further comprises: an isolation door plate located on the inner side wall of the process chamber on the side of the wafer access channel, wherein the isolation door plate has a spacing with the temperature control device, and the isolation door plate is used to close the wafer access channel during process treatment.
[0018] Optionally, the spacing between the isolation door plate and the temperature control device is greater than or equal to 1 cm.
[0019] Compared with the prior art, the technical scheme of the utility model embodiment has the following advantages:
[0020] The temperature control device provided in this embodiment includes: a heating component, a heat insulation component fixedly disposed on the side of the heating component, and a through slot extending laterally through the heat insulation component and the heating component. The heating component can heat the wafer entry / exit channel and the edge region of the process chamber near the wafer entry / exit channel, making the temperature difference between the edge region of the process chamber and the preset process temperature of the process chamber smaller. This facilitates the retention of by-products generated during the process in a gaseous state, making it easier to discharge the by-products and reducing the probability of by-products accumulating in the edge region of the process chamber to form particle defect sources. Consequently, it also reduces the probability of particle defects falling into the process chamber or onto the wafer, thereby improving the quality and performance of semiconductor devices and reducing the probability of semiconductor equipment failure. Moreover, the heat insulation component also helps to reduce heat transfer between the inside and outside of the process chamber, making the temperature control device less affected by the ambient temperature outside the process chamber. Attached Figure Description
[0021] Figure 1 This is a top view of a temperature control device, along with a transfer chamber and a process chamber.
[0022] Figure 2 This is a top view of another temperature control device, along with the transfer chamber and process chamber.
[0023] Figure 3 This is a schematic diagram of the structure of an embodiment of the semiconductor device of this utility model;
[0024] Figure 4 This is a top view of an embodiment of the temperature control device of this utility model, and a schematic diagram of the structure of the transfer chamber and the process chamber.
[0025] Figure 5 This is a schematic diagram showing the positional relationship of the first frame, heating component, heat dissipation holes, and through slot of the temperature control device of this utility model;
[0026] Figure 6 This is a three-dimensional structural diagram of the first frame of the temperature control device of this utility model;
[0027] Figure 7 This is a schematic diagram showing the positional relationship between the second frame, the heat insulation module, and the through slot of the temperature control device of this utility model;
[0028] Figure 8 This is a three-dimensional structural diagram of the second frame of the temperature control device of this utility model;
[0029] Figure 9 This is a top view of another embodiment of the temperature control device of this utility model. Detailed Implementation
[0030] The following describes the cause of the particle defects of the semiconductor device and the failure of the semiconductor equipment due to the new by-product generated in the etching process and the particles formed by the by-product.
[0031] The dummy gate structure includes a dummy gate layer, and the material of the dummy gate layer generally includes silicon (Si). The silicon is easily naturally oxidized into silicon dioxide (SiO2), so that the material of the dummy gate layer includes SiO2. When hydrogen fluoride (HF) and nitrogen trifluoride (NF3) are used as etching gas to remove SiO2, ammonium fluorosilicate
(NH4)2SiF6
(NH4)2SiF6
(NH4)2SiF6
[0032] When the defect source accumulates to a certain thickness, the particles that make up the defect source will fall on the wafer or in the process chamber, causing particle defects of the semiconductor device or failure of the semiconductor equipment. Moreover, opening and closing the isolation door plate between the process chamber and the transfer chamber, and the pressure change in the process chamber will all destroy the stable state of the defect source, causing the particles to fall prematurely.
[0033] In the prior art, in order to reduce the probability of particles falling on the wafer or in the process chamber, two temperature control devices are proposed. Figure 1 is a temperature control device and a schematic view of the top structure of the transfer chamber and the process chamber, Figure 2 is another temperature control device and a schematic view of the top structure of the transfer chamber and the process chamber.
[0034] Reference Figure 1 A temperature control device 10 includes a plurality of heating components 11 symmetrically arranged in the transfer chamber 13, and the heating components 11 are used to make the temperature of the transfer chamber 13 consistent with the temperature of the process chamber 14, so as to reduce the heat conduction between the transfer chamber 13 and the process chamber 14.
[0035] Since the temperature of the transfer chamber 13 is consistent with the temperature of the process chamber 14, when the transfer chamber 13 is connected with multiple process chambers 14, the heat of the transfer chamber 13 can be easily conducted to other process chambers 14 connected therewith, thereby affecting the process temperature of the other process chambers 14. Moreover, when the wafer 15 is located in the transfer chamber 13, it is still in a high temperature environment, which accordingly increases the heat budget of the wafer 15, thereby easily affecting the performance of the semiconductor device.
[0036] With reference to Figure 2 Another temperature control device 20 includes an interface purging component 21 located at a wafer inlet / outlet 23 of a process chamber 22, the interface purging component 21 being used to purge by-products into the process chamber 22 so as to move the by-products away from the wafer inlet / outlet 23, thereby facilitating the dissociation and volatilization of the by-products into gas by the high temperature of the central region of the process chamber 22, and then facilitating the removal of the by-products by an exhaust system (not shown) connected with the process chamber 22.
[0037] However, the above-mentioned method for removing by-products is generally effective, especially for removing by-products at the corner position of the wafer inlet / outlet 23. Moreover, the purging of by-products can easily increase the probability of other types of impurity particles being raised, thereby increasing the risk of the other types of impurity particles falling on the wafer 24 or in the process chamber 22.
[0038] To solve the above technical problems, the embodiments of the present application provide a temperature control device for being arranged in a wafer inlet / outlet passage of a process chamber, or for being detachably arranged on the outer sidewall of the process chamber at the side of the wafer inlet / outlet passage, comprising: a heating assembly; a heat insulation assembly arranged adjacent to the side of the heating assembly along the wafer inlet / outlet direction; and a through slot penetrating through the heat insulation assembly and the heating assembly along the wafer inlet / outlet direction, the through slot being used for passing a wafer through the temperature control device.
[0039] The utility model discloses an embodiment discloses the scheme, including: heating assembly, fixedly arranged in the lateral portion of heating assembly's heat insulation assembly, along the transverse through the heat insulation assembly and the heating assembly's through -slot, the heating assembly can heat the edge area of the process chamber of wafer access channel and wafer access channel nearby, make the difference degree between the edge area temperature of process chamber and the preset process temperature of process chamber be smaller, convenient for making the by -product generated in the process treatment keep gaseous, thereby convenient for discharging by -product, reduce the probability that by -product gathers in the edge area of process chamber and forms the particle defect source, corresponding also reduced the probability that particle defect falls in the process chamber or wafer, and further improve the quality and performance of semiconductor device, also reduce the probability that semiconductor equipment breaks down.
[0040] In order to make above-mentioned purpose, feature and advantage of the utility model embodiment more apparent and easy to understand, below, specific embodiment of the utility model is explained in detail with the help of the drawings.
[0041] Figure 3 It is the structure schematic diagram of an embodiment of the utility model semiconductor equipment, Figure 4 It is an embodiment of the utility model temperature control device, and the overhead structure schematic diagram of conveying chamber and process chamber, Figure 5 It is the position relation schematic diagram of the first frame of the utility model temperature control device, heating assembly, heat dissipation hole and through -slot, Figure 6 It is the three -dimensional structure schematic diagram of the first frame of the utility model temperature control device, Figure 7 It is the position relation schematic diagram of the second frame of the utility model temperature control device and heat insulation module and through -slot, Figure 8 It is the three -dimensional structure schematic diagram of the second frame of the utility model temperature control device.
[0042] Need to explain, in order to clearly show temperature control device, in Figure 3 And Figure 4 The top of temperature control device and the top of process chamber are omitted, Figure 4 In it shows process chamber and wafer and Figure 4 It is Figure 3 The local enlarged view in A area, Figure 5 And Figure 6 Omit some quantity's heat dissipation hole.
[0043] Reference Figures 3 to 8In the embodiment, the temperature control device 100 is arranged in a wafer access passage of the process chamber 500, and includes a heating assembly 101, a heat insulation assembly 102 arranged adjacent to a side of the heating assembly 101 along a wafer 900 access direction, and a through slot penetrating the heat insulation assembly 102 and the heating assembly 101 along the wafer 900 access direction, the through slot being used for the wafer 900 to pass through the temperature control device.
[0044] The wafer 900 access direction refers to a movement direction of the wafer 900 when the wafer 900 accesses the process chamber 500. The isolation door plate 501 reciprocates along the arrow direction in the drawing. Figure 4
[0045] It can be understood that the temperature control device 100 is arranged in a wafer access passage of the process chamber 500, that is, the temperature control device 100 is arranged in a side wall 502 of the process chamber 500 on a side of the isolation door plate 501.
[0046] The heating assembly 101 can heat the wafer access passage and an edge region of the process chamber 500 near the wafer access passage, so that a difference between a temperature of the edge region of the process chamber 500 and a preset process temperature of the process chamber 500 is small, which facilitates the by-products generated in the process to be in a gaseous state, so as to facilitate the by-products to be discharged, reduces a probability of the by-products gathering in the edge region of the process chamber 500 to form a particle defect source, and accordingly reduces a probability of the particle defects falling on the process chamber 500 or the wafer 900, thereby improving the quality and performance of the semiconductor device, and reducing a probability of the semiconductor equipment 550 malfunctioning.
[0047] As an example, the heating assembly 101 is arranged adjacent to the heat insulation assembly 102 (as shown in the drawing). In other embodiments, the heating assembly and the heat insulation assembly can also be arranged at intervals. Figure 4
[0048] In the embodiment, the heating assembly 101 includes a first frame 131 and a heating component 110 arranged in the first frame 131, as shown in the drawing. Figures 4 to 5
[0049] It can be understood that the first frame 131 is a hollow structure.
[0050] The heating component 110 is arranged in the first frame 131, and the first frame 131 can protect the heating component 110 and reduce a probability of the heating component 110 being damaged due to corrosion (for example, etching gas corrosion), thereby facilitating to improve a service life of the heating component 110.
[0051] Specifically, the first frame 131 is a plated aluminum frame structure or a plated stainless steel frame structure
[0052] Both aluminum and stainless steel have good plasticity, strength and corrosion resistance, which is conducive to reducing the difficulty of forming the frame structure 130, improving the strength of the first frame 131, and reducing the probability of damage to the first frame 131 due to corrosion. Moreover, plating is conducive to further improving the corrosion resistance of aluminum or stainless steel, thereby further improving the service life of the first frame 131.
[0053] More specifically, the plating is one or more of nickel plating, yttrium plating, zirconium plating, zinc plating, and aluminum oxide plating.
[0054] Nickel, yttrium, zirconium, zinc, and aluminum oxide have good thermal stability and better corrosion resistance.
[0055] The heating component 110 is used to heat the wafer in and out channel and the edge region of the process chamber near the wafer in and out channel.
[0056] As an example, the material of the heating component 110 is a corrosion-resistant material, which is conducive to reducing the probability of damage to the heating component 110 due to corrosion (e.g., etching gas corrosion) during process treatment, thereby improving the service life of the heating component 110.
[0057] The material of the heating component 110 includes one or more of stainless steel, plated stainless steel, aluminum, and copper. The plated stainless steel includes nickel-plated stainless steel, zinc-plated stainless steel, or yttrium-plated stainless steel, etc. Stainless steel, plated stainless steel, aluminum, and copper all have good hardness, corrosion resistance, and thermal stability, thereby further improving the service life of the heating component 110.
[0058] In this embodiment, the first frame 131 includes a first surface 1311 facing one side of the heat insulation assembly 102, and a second surface 1312 opposite to the first surface 1311, and a plurality of heat dissipation holes 133 are arranged in the second surface 1312. The heat dissipation holes 133 are blind holes (as shown in Figure 5 and Figure 6 ).
[0059] The heat dissipation holes 133 are conducive to transferring the heat generated by the heating component 110 to the wafer 900 in and out channel and the edge region of the process chamber 500 near the wafer 900 in and out channel, thereby further reducing the difference between the temperature of the edge region of the process chamber 500 and the preset process temperature of the process chamber 500, and further reducing the probability of reducing the accumulation of by-products in the edge region of the process chamber 500 to form a particle defect source.
[0060] It is to be noted that the heat dissipation holes 133 are disposed on the side of the heating component 110. In other embodiments, the heat dissipation holes can also be disposed between the second surface and the heating component.
[0061] As an example, the heating component 110 includes an electric heating tube, which is widely used and is conducive to reducing the process cost.
[0062] It is to be noted that, as shown in Figure 5 The distance W4 between the outer sidewall of the first frame 131 and the through slot 120 should not be too small or too large. If the distance W4 between the outer sidewall of the first frame 131 and the through slot 120 is too small, it is easy to increase the difficulty of forming the first frame 131, and also easy to make the strength of the first frame 131 poor, and also easy to increase the difficulty of disposing the heating component 110. If the distance W4 between the outer sidewall of the first frame 131 and the through slot 120 is too large, it is easy to cause unnecessary material waste. Therefore, in the embodiment, the distance W4 between the outer sidewall of the first frame 131 and the through slot 120 is 1-10 cm. The distance W4 between the outer sidewall of the first frame 131 and the through slot 120 refers to the wall thickness of the first frame 131.
[0063] It is also to be noted that, as shown in Figure 5 The distance W5 between the heating component 110 and the through slot 120 (as shown in Figure 5 ) should not be too small or too large. If the distance between the heating component 110 and the through slot 120 is too small, it is easy to increase the process difficulty of forming the first frame 131, and also easy to increase the process difficulty of disposing the heat dissipation holes 133. If the distance between the heating component 110 and the through slot 120 is too large, it is easy to make the heating effect of the wafer 900 in and out of the passage poor. Therefore, in the embodiment, the distance W5 between the heating component 110 and the through slot 120 is 0.5-5 cm.
[0064] The heat insulation assembly 101 is conducive to reducing the heat transfer between the inside and outside of the process chamber 500 (for example, the process chamber and the transfer chamber 551), so that the temperature control device 100 has less influence on the ambient temperature outside the process chamber 500. Especially in the case where the semiconductor equipment 550 also includes a plurality of process chambers 500, it is also conducive to reducing the influence of the heating assembly 101 on other process chambers 500 in the same semiconductor equipment 550.
[0065] In the embodiment, the heat insulation assembly 102 comprises a second frame 132 arranged on the first surface 1311 of the first frame 131, and a heat insulation module 134 arranged in the second frame 132 (as shown in the figure). Figure 7 and Figure 8 .
[0066] It can be understood that the second frame 132 is a hollow structure.
[0067] The heat insulation module 134 is arranged in the second frame 132, and the second frame 132 can protect the heat insulation module 134, reduce the probability of damage of the heat insulation module 134 due to corrosion (for example, corrosion by etching gas), and thus facilitate to improve the service life of the heat insulation module 134.
[0068] It should be noted that the second frame 132 is an aluminum frame structure or a stainless steel frame structure coated with a film. Both aluminum and stainless steel have good plasticity, strength and corrosion resistance, which facilitates to reduce the difficulty of forming the frame structure 130, improve the strength of the second frame 132, and reduce the probability of damage of the second frame 132 due to corrosion. Moreover, the coating facilitates to further improve the corrosion resistance of aluminum or stainless steel, thereby facilitating to further improve the service life of the second frame 132.
[0069] It should be further noted that the coating is one or more of a nickel coating, a yttrium coating, a zirconium coating, a zinc coating and an aluminum oxide coating. Nickel, yttrium, zirconium, zinc and aluminum oxide have good thermal stability and better corrosion resistance.
[0070] The heat insulation module 134 is used to reduce heat transfer between the inside and the outside of the process chamber.
[0071] Specifically, the material of the heat insulation module 134 is a corrosion-resistant and high-temperature-resistant material, which facilitates to reduce the probability of damage of the heat insulation module 134 due to corrosion (for example, corrosion by etching gas) or high temperature during the process, thereby facilitating to improve the service life of the heat insulation module 134.
[0072] More specifically, the heat insulation module 134 is a ceramic insulation module or a resin insulation module. In other embodiments, the heat insulation module can be a metal heat insulation module with a heat insulation coating, for example, a stainless steel heat insulation module with a ceramic heat insulation coating, and the heat insulation module can also be a module of other materials with good heat insulation performance.
[0073] Ceramic and resin have good corrosion resistance, high temperature resistance and heat insulation performance, and are widely used, thereby facilitating to reduce the process cost of the heat insulation module 134.
[0074] In other embodiments, there can also be a gap between the first frame and the second frame.
[0075] In this embodiment, the heating assembly 101 and the heat insulation assembly 102 both surround the through slot 120.
[0076] The heating assembly 101 surrounds the through slot 120, which is conducive to making the uniformity of heating the wafer 900 in the passage better, thereby being conducive to making the effect of keeping the by-products in the passage of the wafer 900 in the gaseous state better.
[0077] The heat insulation assembly 102 surrounds the through slot 120, which is conducive to making the effect of reducing the heat transfer between the inside and the outside of the process chamber 500 better.
[0078] It can be understood that when the heating assembly 101 includes the first frame 131 and the heating component 110 arranged in the first frame 131, the heating component 110 also surrounds the through slot 120.
[0079] As an example, the number of heating components 110 surrounding the through slot 120 is one. In other embodiments, the number of heating components surrounding the through slot can also be multiple. Specifically, the number of heating components surrounding the through slot can be increased or decreased according to actual heating needs.
[0080] It should be noted that, as shown in Figure 6 The distance W4' between the outer side wall of the second frame 132 and the through slot 120 should not be too small or too large. If the distance W4' between the outer side wall of the second frame 132 and the through slot 120 is too small, it is easy to increase the difficulty of forming the second frame 132, make the strength of the second frame 132 poor, and increase the difficulty of arranging the heat insulation module 134. If the distance W4' between the outer side wall of the second frame 132 and the through slot 120 is too large, it is easy to cause unnecessary material waste. Therefore, in this embodiment, the distance W4' between the outer side wall of the second frame 132 and the through slot 120 is 1-10 cm. The distance W4' between the outer side wall of the second frame 132 and the through slot 120 refers to the wall thickness of the second frame 132.
[0081] The first frame 131 and the second frame 132 constitute a frame structure.
[0082] It is to be noted that the distance W4 between the outer sidewall of the first frame 131 and the through slot 120 is 1 centimeter to 10 centimeters, and the distance W4' between the outer sidewall of the second frame 132 and the through slot 120 is 1 centimeter to 10 centimeters. Accordingly, in the embodiment, the wall thickness of the frame structure is 1 centimeter to 10 centimeters.
[0083] It is also to be noted that, as shown in Figure 4 The width W1 of the first frame 131 accounts for a proportion of the width W3 of the frame structure 130, and the width W2 of the second frame 132 accounts for a proportion of the width W3 of the frame structure 130. The proportion should not be too small or too large. If the proportion of the width W1 of the first frame 131 to the width W3 of the frame structure 130 is too small, i.e., the proportion of the width W2 of the second frame 132 to the width W3 of the frame structure 130 is too large, it is difficult to set the heating component 110 in the first frame 131. If the proportion of the width W1 of the first frame 131 to the width W3 of the frame structure 130 is too large, i.e., the proportion of the width W2 of the second frame 132 to the width W3 of the frame structure 130 is too small, the width of the heat insulation module 134 is too small, which is not good for reducing the heat transfer between the inside and the outside of the process chamber 500. Therefore, in the embodiment, the width W1 of the first frame 131 accounts for 20% to 45% of the width W3 of the frame structure 130, and the width W2 of the second frame 132 accounts for 55% to 80% of the width W3 of the frame structure 130.
[0084] The through slot 120 is used as a wafer inlet and outlet. The wafer 900 to be processed is conveyed into the process chamber 500 through the through slot 120 for processing, or the wafer 900 processed is conveyed out of the process chamber 500 through the through slot 120 for subsequent processing steps.
[0085] The temperature control device 100 is arranged in the wafer inlet and outlet passage of the process chamber 500, which is beneficial to reduce the distance between the temperature control device 100 and the process chamber 500, so that the difference between the edge area temperature of the process chamber 500 and the preset process temperature of the process chamber 500 is reduced, thereby further reducing the effect of the formation of particle defects caused by the accumulation of by-products in the edge area of the process chamber 500.
[0086] It can be understood that the temperature control device 100 can be arranged when it is required to heat the wafer 900 access channel and the edge area of the process chamber 500 near the wafer 900 access channel. When it is not required to heat the wafer 900 access channel and the edge area of the process chamber 500 near the wafer 900 access channel, the temperature control device 100 can not be arranged, that is, the temperature control device 100 can be arranged according to the actual process requirement, thereby facilitating to reduce the number of the temperature control device 100, and further facilitating to reduce the process cost.
[0087] As an example, the temperature control device 100 is arranged in the process chamber 500 of the etching device. Correspondingly, the temperature control device 100 is used to reduce the probability of particle defects falling on the wafer 900 or in the process chamber 500 during the etching process. In other embodiments, the temperature control device can also be arranged in other semiconductor devices.
[0088] Correspondingly, the utility model also provides another temperature control device. Figure 9 It is the temperature control device of the second embodiment of the utility model, and the top structure schematic diagram of the transmission chamber and the process chamber.
[0089] The second embodiment is the same as the first embodiment, and details are not repeated here. The difference between the second embodiment and the first embodiment is that the temperature control device 100' is arranged on the outer side wall 502' of the process chamber 500' on the side of the wafer 900' access channel. Figure 9 In the embodiment, the temperature control device 100' is arranged on the outer side wall 502' of the process chamber 500' on the side of the wafer 900' access channel.
[0090] It should be noted that in order to clearly show the temperature control device, the top of the temperature control device and the top of the process chamber are omitted in the following description. Figure 9
[0091] The isolation door plate 501' reciprocates along the arrow direction in the figure. Figure 9
[0092] The temperature control device 100' is arranged on the outer side wall of the process chamber 500' on the side of the wafer 900' access channel, which is beneficial to reduce the modification of the existing process chamber 500', thereby facilitating to combine with the existing semiconductor device, and further facilitating to remove the temperature control device 100' without heating the wafer 900' access channel and the edge area of the process chamber 500' near the wafer 900' access channel, thereby facilitating to improve the cleanliness of the temperature control device 100'.
[0093] Accordingly, the utility model also provides a semiconductor equipment. Figure 3 It is the structure schematic diagram of one embodiment of the utility model semiconductor equipment.
[0094] Reference Figure 3 In the embodiment, the semiconductor equipment 550 includes: a process chamber 500 including a wafer in-out passage (not marked);The temperature control device 100 of any embodiment of the utility model is set in the wafer 900 in-out passage of the process chamber 500, or can be detachably set on the outside wall of the process chamber 500 on the side of the wafer 900 in-out passage.
[0095] The heating assembly 101 can heat the edge area of the process chamber 500 near the wafer 900 in-out passage, so that the difference between the edge area temperature of the process chamber 500 and the preset process temperature of the process chamber 500 is smaller, which is convenient for the by-product generated in the process treatment to keep gaseous, thereby facilitating the by-product to be discharged, reducing the probability of the by-product gathering in the edge area of the process chamber 500 to form a particle defect source, accordingly also reducing the probability of the particle defect falling on the process chamber 500 or the wafer 900, and further improving the quality and performance of the semiconductor device, also reducing the probability of the semiconductor equipment 550 failure.
[0096] In the embodiment, the semiconductor equipment 550 is an etching equipment;Accordingly, the temperature control device 100 is used to be set in the process chamber 500 of the etching equipment.The temperature control device 100 is used to reduce the probability of the particle defect falling on the process chamber 500 or the wafer 900 in the etching process.In other embodiments, the semiconductor equipment can also be other semiconductor equipment that needs to set the temperature control device.
[0097] In one embodiment, when the temperature control device 100 is set in the wafer 900 in-out passage of the process chamber 500, the temperature control device 100 is flush with the side wall of the process chamber 500, so that the surface of the temperature control device 100 and the side wall of the process chamber 500 are relatively flat, thereby facilitating to reduce the probability of forming a particle defect source on the surface of the temperature control device 100, and also facilitating to reduce the probability of other types of impurity particles forming on the surface of the temperature control device 100, and further facilitating to improve the cleanliness of the frame structure 130.
[0098] As an example, in combination with reference to Figure 4 The semiconductor device 550 further comprises an isolation door plate 501 located on the inner sidewall of the process chamber 500 at the side of the wafer 900 access channel, and the isolation door plate 501 has a spacing with the temperature control device 100, and the isolation door plate 501 is used to close the wafer 900 access channel during the process.
[0099] The isolation door plate 501 has a spacing with the temperature control device 100, which facilitates reducing the influence of the isolation door plate 501 on the temperature control device 100 when the process chamber 500 is opened or closed by the isolation door plate 501.
[0100] It should be noted that if the distance between the temperature control device 100 and the isolation door plate 501 is too small, it is easy to cause the temperature of the process chamber to fluctuate greatly, thereby easily affecting the process. Therefore, in a specific embodiment, the spacing between the isolation door plate 501 and the temperature control device 100 is greater than or equal to 1 centimeter.
[0101] For specific description of the temperature control device, please refer to the detailed description of the foregoing embodiments, which will not be repeated in this embodiment.
[0102] Although the utility model discloses as above, the utility model is not limited to this. Any person skilled in the art, without departing from the spirit and scope of the utility model, can make various changes and modifications, therefore the protection scope of the utility model should be the range limited by the claims.
Claims
1. A temperature control device, characterized in that, For use in a wafer inlet / outlet channel within a process chamber, or for use on the outer wall of a process chamber detachably disposed on the side of the wafer inlet / outlet channel, comprising: Heating components; A heat insulation component is disposed adjacent to the side of the heating component along the wafer entry / exit direction; A through-slot, along the wafer entry / exit direction, passes through the heat insulation component and the heating component, and the through-slot is used to allow the wafer to pass through the temperature control device.
2. The temperature control device as described in claim 1, characterized in that, Both the heating component and the heat insulation component surround the through slot.
3. The temperature control device as described in claim 2, characterized in that, The heating assembly includes: a first frame and a heating element disposed in the first frame.
4. The temperature control device as described in claim 3, characterized in that, The first frame includes a first surface facing the heat insulation component and a second surface opposite to the first surface. The second surface has a plurality of heat dissipation holes, which are blind holes.
5. The temperature control device as described in claim 3, characterized in that, The thermal insulation component includes: The second frame is disposed on the first surface of the first frame; The thermal insulation module is installed in the second frame.
6. The temperature control device as described in claim 5, characterized in that, The first frame and the second frame constitute a frame structure, wherein the width of the first frame accounts for 20% to 45% of the width of the frame structure, and the width of the second frame accounts for 55% to 80% of the width of the frame structure.
7. The temperature control device as described in claim 5, characterized in that, The first frame and the second frame constitute a frame structure, and the wall thickness of the frame structure is 1 cm to 10 cm.
8. The temperature control device as described in claim 3, characterized in that, The heating assembly includes an electric heating element.
9. A semiconductor device, characterized in that, include: A process chamber, the process chamber including a wafer entry / exit channel; The temperature control device as described in any one of claims 1 to 8 is disposed in the wafer entry / exit channel of the process chamber, or is detachably disposed on the outer wall of the process chamber on the side of the wafer entry / exit channel.
10. The semiconductor device as claimed in claim 9, characterized in that, When the temperature control device is located in the wafer entry / exit channel of the process chamber, the temperature control device is flush with the side wall of the process chamber.
11. The semiconductor device as claimed in claim 9, characterized in that, The semiconductor device further includes: an isolation door plate located on the inner wall of the process chamber on the side of the wafer entry / exit channel, the isolation door plate having a gap with the temperature control device, the isolation door plate being used to close the wafer entry / exit channel during process processing.
12. The semiconductor device as claimed in claim 10, characterized in that, The distance between the isolation door panel and the temperature control device is greater than or equal to 1 cm.