Heating control device for semiconductor device

Abstract

The utility model provides a heating control device of semiconductor equipment. The heating control device comprises a contact layer and a heating layer which are sequentially sleeved from inside to outside. The contact layer is provided with a temperature protection circuit electrically connected with a temperature protection response device, the heating layer is provided with a heating circuit electrically connected with a heating control device, and the temperature protection response device is in communication connection with the heating control device. The temperature protection response device responds to the state information of the temperature protection circuit to send a response control instruction to the heating control device, and the heating control device responds to the response control instruction to perform heating on-off control on the heating circuit, so that temperature control on the temperature controlled device of the semiconductor equipment is realized. The heating circuit and the temperature protection circuit are separated by the contact layer, or are separated by the heating layer and the contact layer, so that the adverse effect of the heating circuit on the sensitivity of the temperature protection circuit can be reduced or avoided, and the temperature of the temperature controlled device can be effectively monitored and controlled.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor equipment, more specifically, it relates to the heating control device of semiconductor equipment. BACKGROUND

[0002] The temperature controlled device of semiconductor equipment, for example, the gas pipeline for conveying the reaction source needs to have a certain temperature of the reaction source in the reaction source conveying process to meet the process requirement, or the exhaust pipeline needs to have a certain temperature in the exhaust pipeline to make the substance gasification and exhaust because the substance in the exhaust pipeline is easy to deposit in the pipeline in the discharging process, or the cavity needs to keep a certain temperature because of the process requirement. Therefore, temperature monitoring and control are required for these temperature controlled devices.

[0003] The method for monitoring and controlling the temperature of the above-mentioned temperature controlled device in the prior art generally includes: the circuit of the heating element and the temperature control switch is covered in the heating sleeve pipe, the heating sleeve pipe is sleeved on the pipeline or the cavity, and the temperature control switch will be disconnected to stop the heating element from heating once the temperature is abnormal.

[0004] However, the sensitivity of the temperature control switch is reduced by the heating of the heating element, which affects the sensitivity of the temperature sensing response and leads to ineffective temperature monitoring and control of the temperature controlled device. UTILITY MODEL CONTENTS

[0005] The utility model aims at providing a heating device of semiconductor equipment to reduce or avoid the adverse effect of the heating body on the sensitivity of the temperature protection device such as the temperature control switch.

[0006] To achieve the above-mentioned purpose, the utility model provides the heating control device of semiconductor equipment, which comprises:

[0007] The contact layer and the heating layer are sequentially sleeved from inside to outside, the contact layer is used for sleeving the temperature controlled device of the semiconductor equipment;

[0008] The temperature protection response device and the heating control device are connected with each other in communication;

[0009] The contact layer is provided with a temperature protection circuit, the temperature protection circuit is electrically connected with the temperature protection response device, so that the temperature protection response device sends the response control instruction to the heating control device in response to the state information of the temperature protection circuit;

[0010] The heating layer is provided with a heating circuit, the heating circuit is electrically connected with the heating control device, so that the heating control device controls the heating circuit to heat or not in response to the response control instruction;

[0011] The heating circuit arranged on the heating layer and the temperature protection circuit arranged on the contact layer are separated by the contact layer or separated by the heating layer and the contact layer.

[0012] Further, the temperature protection circuit comprises at least one temperature control switch, when the number of the temperature control switches is at least two, each of the temperature control switches is connected in series.

[0013] Further, the contact layer comprises at least two sub-contact layers arranged in sequence, each of the sub-contact layers is provided with at least one temperature control switch.

[0014] Further, the heating circuit comprises at least one heating resistor, when the number of the heating resistors is at least two, each of the heating resistors is connected in series.

[0015] Further, the heating layer comprises at least two sub-heating layers arranged in sequence, each of the sub-heating layers is provided with at least one heating resistor.

[0016] Further, the contact layer comprises at least two sub-contact layers arranged in sequence, the heating layer comprises at least two sub-heating layers arranged in sequence, and the sub-contact layers and the sub-heating layers are arranged one by one in correspondence.

[0017] Further, the temperature protection circuit comprises at least two temperature control switches connected in series, the heating circuit comprises at least two heating resistors connected in series, and the temperature control switches and the heating resistors are arranged one by one in correspondence.

[0018] Further, the temperature protection circuit comprises at least two temperature control switches connected in series, the heating circuit comprises at least two heating resistors connected in series, and the temperature control switches and the heating resistors are arranged one by one in correspondence.

[0019] Further, the temperature protection circuit comprises at least two temperature control switches connected in series, the heating circuit comprises at least two heating resistors connected in series, and the temperature control switches and the heating resistors are arranged one by one in correspondence.

[0020] Further, the temperature controlled device comprises a pipeline or a cavity.

[0021] The heating control device of the semiconductor equipment has the advantages that the temperature protection circuit arranged in the contact layer is electrically connected with the temperature protection response device, the heating circuit arranged in the heating layer is electrically connected with the heating control device, the temperature protection response device and the heating control device are mutually communicated and connected, the temperature protection response device sends a response control instruction to the heating control device in response to state information of the temperature protection circuit, the heating control device controls the heating circuit to heat or not in response to the response control instruction, thereby realizing temperature control on the temperature controlled device of the semiconductor equipment, the heating circuit and the temperature protection circuit are separated by the contact layer or separated by the heating layer and the contact layer, the heating circuit can reduce or avoid adversely affecting the sensitivity of the temperature protection circuit, thereby effectively monitoring and controlling the temperature of the temperature controlled device, and ensuring safe and reliable operation of the semiconductor equipment. BRIEF DESCRIPTION OF DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained without creative labor based on these drawings.

[0023] Figure 1 The structure schematic diagram of the heating control device of the semiconductor equipment provided by the embodiment of the present application is shown, wherein the radial cross-sectional view of each layer structure is shown.

[0024] Figure 2 The plane expansion structure schematic diagram of the contact layer and the heating layer of the heating control device of the semiconductor equipment provided by the embodiment of the present application is shown, wherein the plane expansion refers to the structure obtained by cutting and spreading the side wall along the axial direction of the heating layer.

[0025] Figure 3 The plane expansion structure schematic diagram of the contact layer and the heating layer of the heating control device of the semiconductor equipment provided by the embodiment of the present application is shown, wherein the plane expansion refers to the structure obtained by cutting and spreading the side wall along the axial direction of the heating layer.

[0026] Figure 4 The structure schematic diagram of the heating control device of the semiconductor equipment provided by the embodiment of the present application is shown, wherein the radial cross-sectional view of each layer structure is shown.

[0027] Figure 5 The plane expansion structure schematic diagram of the contact layer, the heating layer and the temperature measuring layer of the heating control device of the semiconductor equipment provided by the embodiment of the present application is shown.

[0028] Figure 6 The embodiment of the utility model provides a plane development structure schematic diagram of the heating control device of semiconductor equipment with sub temperature measuring layer.

[0029] In the drawing, various reference signs:

[0030] 1 - contact layer, 2 - heating layer, 3 - temperature protection response device, 4 - heating control device, 5 - temperature controlled device, 6 - temperature measuring layer, 7 - heat preservation layer, 11 - temperature protection circuit, 12 - sub contact layer, 21 - heating circuit, 22 - sub heating layer, 61 - temperature measuring element, 111 - temperature control switch, 211 - heating resistance. DETAILED DESCRIPTION

[0031] To make the purpose, technical scheme and advantages of the embodiment of the utility model more clear, the technical scheme in the embodiment of the utility model will be clearly and completely described below in conjunction with the drawings in the embodiment of the utility model, obviously, the described embodiment is a part of the embodiment of the utility model, not all the embodiment of the utility model. Based on the embodiment in the utility model, all other embodiments obtained by the ordinary skill in the art without making creative labor belong to the scope of protection of the utility model.

[0032] In the description of the utility model, it is understood that the terms "include" and "have" and their any change used in this paper are intended to cover the non-exclusive inclusion, for example, the process, method, system, product or equipment including a series of steps or units does not have to be limited to the clearly listed steps or units, but can include other steps or units not clearly listed or inherent to these processes, methods, products or equipment.

[0033] It is understood that the orientation or positional relationship indicated by the terms "length", "width", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the utility model and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, therefore it cannot be understood as a limitation to the utility model.

[0034] In addition, in the description of the utility model, the meaning of "a plurality of" is two or more, unless otherwise specified.

[0035] The heating control device of semiconductor equipment provided by the utility model will be described in detail below in conjunction with specific embodiments.

[0036] Please refer to Figure 1 , Figure 2The embodiment of the present application provides a heating control device of a semiconductor device, which comprises a contact layer 1, a heating layer 2, a temperature protection response device 3 and a heating control device 4 which are sequentially sleeved from inside to outside, the contact layer 1 is used for sleeving a temperature controlled device 5 of the semiconductor device; the contact layer 1 is provided with a temperature protection circuit 11, the temperature protection circuit 11 is electrically connected with the temperature protection response device 3, so that the temperature protection response device 3 sends a response control instruction to the heating control device 4 in response to state information of the temperature protection circuit 11; the heating layer 2 is provided with a heating circuit 21, the heating circuit 21 is electrically connected with the heating control device 4, so that the heating control device 4 controls the heating circuit 21 in response to the response control instruction; the heating circuit 21 arranged on the heating layer 2 and the temperature protection circuit 11 arranged on the contact layer 1 are separated by the contact layer 1 or the heating layer 2 and the contact layer 1.

[0037] The embodiment does not specially limit the specific size of the contact layer 1 and the heating layer 2, and the skilled in the art can preset according to the size of the temperature controlled device 5 of the semiconductor device. The embodiment does not specially limit the specific material of the contact layer 1 and the heating layer 2. Exemplarily, the temperature controlled device 5 is a pipeline, and the material of the contact layer 1 can be aluminum foil composite glass cloth. In the embodiment, the contact layer 1 arranged on the inner side of the heating layer 2 directly contacts the outer wall of the pipeline, so that heat transfer is promoted and heat transfer resistance is reduced. The aluminum foil composite glass fiber cloth has better tensile strength and surface stiffness, is convenient to closely adhere to the heating pipeline, and the aluminum foil material can reflect part of the heat emitted by the pipeline.

[0038] The temperature protection circuit 11 arranged on the contact layer 1 of the embodiment is electrically connected with the temperature protection response device 3, the heating circuit 21 arranged on the heating layer 2 is electrically connected with the heating control device 4, the temperature protection response device 3 sends a response control instruction to the heating control device 4 in response to state information of the temperature protection circuit 11, and the heating control device 4 controls the heating circuit 21 in response to the response control instruction, so that the heating control device of the semiconductor device can control the temperature of the temperature controlled device 5.

[0039] The contact layer 1 and the heat generating layer 2 of the embodiment are sequentially sleeved from inside to outside. For example, the temperature protection circuit 11 of the embodiment is arranged on the side of the contact layer 1 close to the temperature controlled device of the semiconductor device, the heat generating circuit 21 is arranged on the side of the heat generating layer 2 close to the contact layer 1, and the heat generating circuit 21 arranged on the heat generating layer 2 and the temperature protection circuit 11 arranged on the contact layer 1 are separated by the contact layer 1. Alternatively, the temperature protection circuit 11 is arranged on the side of the contact layer 1 away from the temperature controlled device of the semiconductor device, the heat generating circuit 21 is arranged on the side of the heat generating layer 2 away from the contact layer 1, and the heat generating circuit 21 arranged on the heat generating layer 2 and the temperature protection circuit 11 arranged on the contact layer 1 are separated by the heat generating layer 2 and the contact layer 1.

[0040] In the prior art, the temperature controlled device of the semiconductor device generally uses a heat generating circuit including a heat generating element and a temperature control switch to control the temperature. The temperature control switch is closed or opened to control the on-off of the heat generating circuit according to the temperature. When the temperature exceeds a certain threshold, the temperature control switch is opened to stop the heat generating element from generating heat. In the prior art, the heat generating element and the temperature control switch are connected in series, and the heat generating element and the temperature control switch are arranged along the axial direction of the temperature controlled device. The sensitivity of the temperature control switch is reduced due to the influence of the adjacent heat generating element, which affects the accuracy of temperature measurement of the temperature control switch and causes the temperature control switch to fail to accurately reflect the temperature of the pipeline. In the embodiment, the heat generating circuit 21 arranged on the heat generating layer 2 and the temperature protection circuit 11 arranged on the contact layer 1 are separated by the contact layer 1 or the heat generating layer 2 and the contact layer 1, which can reduce the influence of the heat generating circuit 21 on the temperature protection circuit 11, ensure the sensitivity of the temperature protection circuit 11, and enable the temperature protection response device 3 to correctly respond to the state information of the temperature protection circuit 11.

[0041] The heating control device of the semiconductor device provided by the embodiment is electrically connected with the temperature protection circuit 11 of the temperature protection response device 3 arranged in the contact layer 1, and the heating circuit 21 of the heating layer 2 is electrically connected with the heating control device 4. The temperature protection response device 3 sends a response control instruction to the heating control device 4 in response to the state information of the temperature protection circuit 11. The heating control device 4 controls the heating circuit 21 to heat or not to heat in response to the response control instruction. The heating control device can control the heating circuit 21 to heat or not to heat in response to the response control instruction, so as to control the temperature of the temperature controlled device of the semiconductor device. The heating circuit 21 and the temperature protection circuit 11 are separated by the contact layer 1 or the heating layer 2 and the contact layer 1. The temperature protection circuit 11 can be prevented from being affected by the heat of the heating circuit 21, the sensitivity of the temperature protection circuit 11 is ensured, the temperature protection response device 3 can correctly respond to the state information of the temperature protection circuit 11, the heating control device 4 can send an effective response control instruction to control the heating circuit 21 to heat or not to heat, the temperature controlled device can be effectively monitored and controlled, and the semiconductor device can be safely and reliably operated.

[0042] For example, the reaction source gas required to be introduced into the MOCVD semiconductor device for the vapor deposition reaction is in a gaseous state. Some reaction source gases, such as trimethyl gallium, are in a liquid state at normal pressure. The reaction source gas needs to be vaporized at a certain temperature and pressure, and then introduced into the gas inlet pipeline or carried by a carrier gas into the gas inlet pipeline. The gas inlet pipeline for conveying the reaction source gas is the temperature controlled device 5 of the semiconductor device, which is provided with the heating control device of the embodiment. The temperature protection circuit 11 can be prevented from being affected by the heat of the heating circuit 21, the sensitivity of the temperature protection circuit 11 is ensured, the temperature protection response device 3 can correctly respond to the state information of the temperature protection circuit 11, the heating control device 4 can send an effective response control instruction to control the heating circuit 21 to heat or not to heat, and the reaction source gas can be prevented from being liquefied in the gas inlet pipeline.

[0043] In the embodiment, the heating control device 4 controls the heating of the heating circuit 21. The specific implementation means of the heating control device 4 for controlling the heating of the heating circuit 21 is a conventional technical means for those skilled in the art. During the process of the heating control device 4 controlling the heating of the heating circuit 21, the temperature protection response device 3 is in a closed state. The temperature protection response device 3 can sense the temperature. When the temperature exceeds a certain threshold value, the temperature protection response device 3 can switch to an open state in response to the temperature. The temperature protection response device 3 detects the state information generated due to the switching.

[0044] The temperature controlled device 5 of the embodiment is not limited to a pipe, but can also be a cavity, such as a process cavity, which needs to control the internal temperature.

[0045] Referring to Figure 1 , Figure 2 In an embodiment, the temperature protection circuit 11 comprises at least one temperature control switch 111, and when the number of the temperature control switches 111 is at least two, each of the temperature control switches 111 is connected in series. The temperature control switch 111 of the embodiment can detect the temperature change of the temperature controlled device 5 of the semiconductor device in time, and the temperature protection response device 3 sends a response control instruction to the heat generation control device 4 in response to the state information of the temperature control switch 111. For example, the temperature protection response device 3 responds to the on-off information of the temperature control switch 111.

[0046] The temperature protection circuit 11 of the embodiment is provided with a plurality of temperature control switches 111, and the plurality of temperature control switches 111 are arranged at intervals along a certain interval. By setting a plurality of temperature switches to sense the temperature conditions of different areas, the temperature of different areas of the temperature controlled device 5 can be better monitored, and the local high temperature of the temperature controlled device 5 can be avoided. The plurality of temperature control switches 111 of the embodiment are connected in series, and the manufacturing method is simple. In some embodiments, the output end of the temperature protection circuit 11 with a plurality of temperature control switches 111 extending from the input end side on the contact layer is electrically connected to the temperature protection response device 3, that is, the input end and the output end of the temperature protection circuit 11 with temperature control switches 111 are arranged on one end of the contact layer 1 in the axial direction, which facilitates the connection of the temperature protection response device 3 on the outside of the contact layer 1.

[0047] Referring to Figure 1 and Figure 3 Further, the contact layer 1 comprises at least two sub-contact layers 12 arranged in sequence. Specifically, the adjacent sub-contact layers 12 have an interval, and each of the sub-contact layers 12 is provided with at least one temperature control switch 111. In the embodiment, the temperature control switch 111 is arranged in different sub-contact layers 12, and because the temperature control switch 111 will also generate heat during operation, the temperature control switch 111 is immune to the interference between adjacent temperature control switches 111, and the sensitivity of the temperature control switch 111 is further improved.

[0048] Further, the heating circuit 21 comprises at least one heating resistor 211, when the number of the heating resistor 211 is at least two, each of the heating resistor 211 is connected in series. The heating circuit 21 of the embodiment comprises a plurality of heating resistors 211, and the plurality of heating resistors 211 are arranged at intervals. By arranging a plurality of heating resistors 211, the temperature of the temperature-controlled device can be controlled uniformly, and the local high temperature of the temperature-controlled device can be avoided. The plurality of heating resistors 211 of the embodiment are connected in series, and the output end of the heating circuit 21 on the contact layer extends from the input end side and is electrically connected with the heating control device 4. That is, the input end and the output end of the heating circuit 21 are arranged at one end of the heating layer 2 in the axial direction, and the heating control device 4 is connected to the outside of the heating layer 2.

[0049] Please refer to Figure 1 and Figure 3 Further, the heating layer 2 comprises at least two sub-heating layers 22 arranged in sequence, and each of the sub-heating layers 22 is provided with at least one heating resistor 211. By arranging different heating resistors 211 in different sub-heating layers 22, the mutual influence between the heat radiated by adjacent heating resistors 211 can be reduced, and the temperature sensed by the temperature control switch 111 can truly reflect the heating condition of the corresponding heating resistor 211.

[0050] Further, the sub-contact layer 12 and the sub-heating layer 22 are arranged one by one. By arranging the sub-contact layer 12 and the sub-heating layer 22 one by one, the temperature-controlled device of the semiconductor device can be controlled in a regional and fine manner. For example, when the temperature control switch 111 of one of the sub-contact layers 12 is disconnected due to sensing a too high temperature, the heating power of the heating circuit 21 on the corresponding sub-heating layer 22 can be controlled according to the information interaction between the temperature protection response device 3 and the heating control device 4.

[0051] In a specific embodiment, the temperature protection circuit 11 comprises at least two temperature control switches 111, and the heating circuit 21 comprises at least two heating resistors 211. The temperature control switch 111 and the heating resistor 211 are arranged one by one. The temperature control switch 111 in the temperature protection circuit 11 and the heating resistor 211 in the heating circuit 21 of the embodiment are both multiple, and by arranging the temperature control switch 111 and the heating resistor 211 one by one, the temperature of different regions of the pipeline can be controlled more finely, and the situation that the temperature difference of the pipeline is too large can be alleviated or avoided.

[0052] Please refer to Figures 2-5Further, in the above embodiment, the heating control device of the semiconductor device further comprises a temperature measuring layer 6 and a heat preservation layer 7 which are sequentially arranged outside the heating layer 2, and the heat preservation layer 7 comprises a glass fiber fabric with a porous structure, and the glass fiber fabric with the porous structure comprises a glass fiber needle punched felt.

[0053] The temperature measuring layer 6 of the embodiment is used to measure the temperature of the heating resistor 211, and the temperature of the temperature controlled device 5 of the semiconductor device can be obtained through the temperature of the heating resistor 211. The temperature measuring layer 6 of the embodiment is provided with a temperature measuring element 61, and the temperature obtained through the temperature measuring element 61 can realize real-time monitoring of the operating temperature of the temperature controlled device 5 of the semiconductor device, timely find temperature abnormality, eliminate the hidden danger of safe operation caused by overheating, and avoid economic losses caused thereby. The temperature measuring element 61 of the embodiment can be a thermocouple, which has high measurement accuracy, wide temperature measurement range, simple operation and high stability.

[0054] In the embodiment, the heat preservation layer 7 is used for heat preservation of the heating layer 2. The heat preservation layer 7 of the embodiment is usually composed of materials with small thermal conductivity coefficients, which have good heat insulation performance and can effectively prevent heat transfer. By arranging the heat preservation layer 7, the heat loss of the gas phase medium in the pipeline during the conveying process can also be reduced, thereby saving energy and improving the economy of system operation. In addition, a protective layer is usually arranged on the outer layer of the heat preservation layer 7 to protect the heat preservation layer 7 from mechanical damage and moisture erosion from the outside.

[0055] The heat preservation layer 7 of the embodiment is a glass fiber fabric with a porous structure, and the glass fiber fabric with the porous structure comprises a glass fiber needle punched felt. The glass fiber needle punched felt has low heat transfer coefficient and very good heat insulation and heat resistance performance. The glass fiber needle punched felt has thousands of tiny air holes and irregular fiber distribution, which can reduce energy outflow.

[0056] Please refer to Figure 6 Further, the temperature measuring layer 6 comprises at least two sub-temperature measuring layers 62 which are sequentially arranged, the heating layer 2 comprises at least two sub-heating layers 22, and the sub-heating layers 22 and the sub-temperature measuring layers 62 are one-to-one correspondingly arranged. By arranging multiple sub-temperature measuring layers 62 and multiple sub-heating layers 22, and one-to-one corresponding arrangement of the sub-heating layers 22 and the sub-temperature measuring layers 62, the corresponding sub-heating layer 22 can be controlled when the temperature of one of the sub-temperature measuring layers 62 is abnormal.

[0057] The temperature protection response device and the heating control device are mutually communicated and connected, so that the temperature protection response device sends a response control instruction to the heating control device in response to state information of the temperature protection circuit, the heating control device controls the heating circuit to heat or not in response to the response control instruction, thereby realizing temperature control on the temperature controlled device of the semiconductor equipment, the heating circuit and the temperature protection circuit are separated by the contact layer or separated by the heating layer and the contact layer, which can reduce or avoid the adverse effect of the heating circuit on the sensitivity of the temperature protection circuit, thereby effectively monitoring and controlling the temperature of the temperature controlled device, and ensuring safe and reliable operation of the semiconductor equipment.

[0058] The above embodiments are only used to illustrate the technical solutions of the utility model, rather than limit them; although the utility model is described in detail with reference to the above embodiments, those skilled in the art should understand that the technical solutions recorded in the above embodiments can still be modified, or some or all of the technical features can be replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the utility model.

Claims

1. A heating control device for a semiconductor apparatus, characterized by comprising: The application relates to a temperature control device for a semiconductor device, comprising: a contact layer and a heating layer which are sequentially sleeved from inside to outside, the contact layer is used for sleeving a temperature control device of the semiconductor device; a temperature protection response device and a heating control device which are connected in communication with each other; the contact layer is provided with a temperature protection circuit, the temperature protection circuit is electrically connected with the temperature protection response device, the temperature protection response device sends a response control instruction to the heating control device in response to state information of the temperature protection circuit; the heating layer is provided with a heating circuit, the heating circuit is electrically connected with the heating control device, and the heating control device performs heating on-off control on the heating circuit in response to the response control instruction; the heating circuit arranged on the heating layer and the temperature protection circuit arranged on the contact layer are separated by the contact layer or the heating layer and the contact layer.

2. The heating control apparatus for a semiconductor device according to claim 1, wherein The temperature protection circuit comprises at least one temperature control switch, when the number of the temperature control switches is at least two, the temperature control switches are sequentially connected in series.

3. The heating control apparatus for a semiconductor device according to claim 2, wherein The contact layer comprises at least two sub-contact layers which are sequentially arranged, and each sub-contact layer is provided with at least one temperature control switch.

4. The heating control apparatus for a semiconductor device according to claim 1, wherein The heating circuit comprises at least one heating resistor, when the number of the heating resistors is at least two, the heating resistors are sequentially connected in series.

5. The heating control apparatus for a semiconductor device according to claim 4, wherein The heating layer comprises at least two sub-heating layers which are sequentially arranged, and each sub-heating layer is provided with at least one heating resistor.

6. The heating control apparatus for a semiconductor device according to claim 1, wherein The contact layer comprises at least two sub-contact layers which are sequentially arranged, and the heating layer comprises at least two sub-heating layers which are sequentially arranged, and the sub-contact layers and the sub-heating layers are one-to-one correspondingly arranged.

7. The heating control apparatus for a semiconductor device according to claim 1, wherein The temperature protection circuit comprises at least two temperature control switches which are sequentially connected in series, the heating circuit comprises at least two heating resistors which are sequentially connected in series, and the temperature control switches and the heating resistors are one-to-one correspondingly arranged.

8. The heating control apparatus for a semiconductor device according to claim 1, wherein The application further comprises a temperature measuring layer and a heat preservation layer which are sequentially sleeved outside the heating layer, the heat preservation layer comprises a glass fiber fabric with a pore structure, and the glass fiber fabric with the pore structure comprises a glass fiber needle felt.

9. The heating control apparatus for a semiconductor device according to claim 8, wherein The temperature measuring layer comprises at least two sub-temperature measuring layers which are sequentially arranged, the heating layer comprises at least two sub-heating layers which are sequentially arranged, and the sub-heating layers and the sub-temperature measuring layers are one-to-one correspondingly arranged.

10. The heating control apparatus for a semiconductor device according to claim 1, wherein The temperature control device comprises a pipeline or a cavity.

Images