Chemical vapor deposition furnace for preparing TaC coating

Abstract

The utility model discloses a chemical vapor deposition furnace for preparing a TaC coating, which relates to the technical field of chemical vapor deposition equipment and comprises a furnace body, a sealing box, a gas conveying device, a rotating device, a gas inlet shunting device and a gas exhaust shunting device, the sealing box is arranged in the furnace body, and the rotating end of the rotating device extends into the sealing box and is communicated with the gas conveying device; the air inlet flow dividing device is arranged on one side of the furnace body, and the exhaust flow dividing device is arranged on the other side of the furnace body. Through rotation, air flows flowing through different positions of the surface of the material can be consistent, meanwhile, the air flows are stirred, a flow field is more uniform, a coating is more uniform, and the product quality is effectively controlled. The horizontal furnace body is adopted, limitation of the height of a plant is small, an additional support and a furnace cover moving device are not needed, and large-scale manufacturing of the furnace body is facilitated. Inlet air and exhaust air are respectively shunted, so that the consistency of airflow is further improved, the uniformity of a TaC coating is improved, and the product quality is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to chemical vapor deposition equipment technical field especially relates to a chemical vapor deposition furnace for preparing TaC coating. BACKGROUND

[0002] The third generation semiconductor has the advantages of high frequency, high power, high temperature resistance, high pressure resistance and the like, and is widely used in new generation mobile communication and new energy automobile industry. Silicon carbide single crystal is an important material in the production process of the third generation semiconductor, and is usually prepared by physical vapor transport method. However, pure graphite crucible is easy to contaminate silicon carbide single crystal under the condition of temperature above 2000 DEG C, causing crystal growth defects. The usual solution is to coat a layer of TaC (tantalum carbide) coating on the surface of the graphite crucible, so as to have excellent high temperature resistance and chemical resistance.

[0003] TaC coating can be prepared on the surface of graphite by using chemical vapor deposition method. The basic principle of this method is to transport gaseous substances to the surface of solid at a certain temperature to produce solid deposition by chemical reaction. In the industrial field, TaC coated graphite can be produced by using chemical vapor deposition furnace, which belongs to a kind of vacuum furnace, and can be divided into horizontal furnace and vertical furnace according to the direction of furnace body. The chemical vapor deposition furnace for depositing silicon nitride film is disclosed in the patent with publication number CN115537771A.

[0004] At present, the common vertical chemical vapor deposition furnace is placed vertically, and the material is taken out or put in by opening the upper furnace cover or the lower furnace cover. Usually, additional mechanism is needed to realize the movement of the furnace cover, and separate support is needed to support the furnace body. The auxiliary structure is complex, and the large furnace body is easy to be limited by the height of the workshop. The horizontal furnace is placed horizontally, mainly occupying the horizontal space, and the height of the workshop has little effect on it. The horizontal furnace usually transports gas from the bottom or side of the furnace body, and the gas flows unidirectionally in the furnace and along the surface of the material, resulting in inconsistent gas concentration on the surface of the same material, which finally affects the film thickness uniformity and coating surface quality of the product. SUMMARY

[0005] The utility model discloses a chemical vapor deposition furnace for preparing TaC coating to solve the above-mentioned problems existing in prior art, so that the gas flowing through each position of the material is consistent, thereby improving the film thickness uniformity and coating surface quality of the product.

[0006] To achieve the above-mentioned purpose, the utility model provides the following scheme:

[0007] The utility model provides a kind of for preparing TaC coating's chemical vapor deposition furnace, including furnace body, sealed box, gas transport device, rotating device, intake shunt device and exhaust shunt device;The sealed box is arranged in the furnace body, and the rotating end of the rotating device is inserted into the sealed box;The intake shunt device is arranged at one side of the furnace body and is communicated with the gas transport device, and the exhaust shunt device is arranged at the other side of the furnace body.

[0008] Optionally, the intake shunt device includes an intake shunt plate arranged at one side of the sealed box, an intake buffer cavity is formed between the intake shunt plate and the inner wall of one side of the sealed box, the bottom of the intake buffer cavity is communicated with the intake pipeline, and a plurality of intake holes are arranged on the intake shunt plate.

[0009] Optionally, the intake shunt device includes an intake shunt pipe arranged at one side of the sealed box, the bottom of the intake shunt pipe is communicated with the intake pipeline, and a plurality of intake holes are arranged on the intake shunt pipe.

[0010] Optionally, the exhaust shunt device includes an exhaust shunt plate arranged at the other side of the sealed box, an exhaust buffer cavity is formed between the exhaust shunt plate and the inner wall of the other side of the sealed box, the bottom of the exhaust buffer cavity is communicated with the exhaust pipeline, and a plurality of exhaust holes are arranged on the exhaust shunt plate.

[0011] Optionally, the exhaust shunt device includes an exhaust shunt pipe arranged at the other side of the sealed box, the bottom of the exhaust shunt pipe is communicated with the exhaust pipeline, and a plurality of exhaust holes are arranged on the exhaust shunt pipe.

[0012] Optionally, the exhaust shunt device is communicated with a vacuum system, and the vacuum system is used for vacuumizing the furnace body and the sealed box or for controlling the pressure in the furnace body and the sealed box.

[0013] Optionally, the intake shunt device is communicated with a gas delivery device, and the gas delivery device includes an intake pipe, a plurality of branch pipes are arranged at the intake end of the intake pipe, and the gas outlet end of the intake pipe is communicated with the intake shunt device.

[0014] Optionally, the furnace body is a horizontal furnace.

[0015] Optionally, the furnace body includes a furnace body and a furnace cover, and the furnace cover is arranged at one end or both ends of the furnace body.

[0016] Optionally, a water cooling jacket is arranged in the furnace body and the furnace cover.

[0017] Compared with the prior art, the utility model has the following technical effects:

[0018] The utility model is used for the chemical vapor deposition furnace of preparation TaC coating, through rotation, the airflow of material surface different position flow can be consistent, and rotation also can agitate the airflow in sealed box inside, make inside flow field more even, make the TaC coating of product more even, effective control product quality. Adopting horizontal furnace body, compared with vertical furnace body, the height restriction is smaller, also need not additional support and furnace cover movement device, convenient for the large -scale production of furnace body. The air intake and exhaust are respectively shunted, further improve the consistency of airflow, improve the uniformity of TaC coating, improve product quality. BRIEF DESCRIPTION OF DRAWINGS

[0019] In order to more clearly illustrate the technical scheme in the embodiment of the utility model or prior art, the following will be briefly introduced the drawing needed to be used in the embodiment, obviously, the drawing in the following description only some embodiments of the utility model, for ordinary skilled person in the art, under the premise of not paying creative labor, can also obtain other drawings according to these drawings.

[0020] Figure 1 It is the structure schematic drawing of the chemical vapor deposition furnace for preparing TaC coating in the utility model,

[0021] Figure 2 It is the first air intake shunt structure schematic drawing of the chemical vapor deposition furnace for preparing TaC coating in the utility model,

[0022] Figure 3 It is the second air intake shunt structure schematic drawing of the chemical vapor deposition furnace for preparing TaC coating in the utility model,

[0023] Figure 4 It is the first exhaust shunt structure schematic drawing of the chemical vapor deposition furnace for preparing TaC coating in the utility model,

[0024] Figure 5 It is the second exhaust shunt structure schematic drawing of the chemical vapor deposition furnace for preparing TaC coating in the utility model,

[0025] Figure 6 It is the structure schematic drawing of one kind of embodiment of the chemical vapor deposition furnace for preparing TaC coating in the utility model,

[0026] Figure 7 It is the structure schematic drawing of another two kinds of embodiments of the chemical vapor deposition furnace for preparing TaC coating in the utility model.

[0027] EXPLANATION OF REFERENCE NUMERALS:

[0028] 1. Furnace body; 2. Sealed box; 3. Gas transport device; 4. Rotating device; 5. Inlet gas diversion device; 6. Exhaust gas diversion device. Detailed Implementation

[0029] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.

[0030] like Figure 1 As shown, this embodiment provides a chemical vapor deposition furnace for preparing TaC coatings, including a furnace body 1, a sealed box 2, a gas transport device 3, a rotating device 4, an inlet gas diversion device 5, and an exhaust gas diversion device 6; the sealed box 2 is disposed inside the furnace body 1, and the rotating end of the rotating device 4 extends into the sealed box 2 and is connected to the gas transport device 3; the inlet gas diversion device 5 is disposed on one side of the furnace body 1, and the exhaust gas diversion device 6 is disposed on the other side of the furnace body 1.

[0031] In this specific embodiment, the furnace body 1 includes a furnace body, a furnace cover, a heating system, and a heat insulation system. The furnace body 1 is a horizontal furnace, and the furnace body and furnace cover are equipped with water-cooled jackets. The cooperation between the furnace body and the furnace cover creates a sealed space inside the furnace body 1, allowing materials to be loaded and unloaded by opening the furnace cover. The heating system heats the interior of the furnace body 1, while the heat insulation system reduces heat transfer between the interior of the furnace body 1 and the furnace body to a certain extent, preventing excessive heat loss. The water-cooled jacket provides cooling protection for the furnace body and furnace cover, preventing them from overheating and causing danger.

[0032] The sealed box 2 is located inside the furnace body 1 and has a sealing function, which can isolate the gas exchange between the inside and outside of the box and prevent impurities in the furnace from entering the sealed box 2 through the airflow, thus providing a pure space for the chemical vapor deposition of TaC coating.

[0033] The gas conveying device 3 comprises an air inlet pipe, an air outlet pipe, a gas source and a vacuum system. The air inlet pipe is located at the left side of the sealed box 2 and is connected with the sealed box 2, and the connection is sealed. The air outlet pipe is located at the right side of the sealed box 2 and is connected with the sealed box 2, and the connection is sealed. The gas source comprises Ar, H2, CH4 and TaCl5. The vacuum system can make the inside of the sealed box 2 and the furnace body 1 into a vacuum state. The air in the sealed box 2 can be drawn away through the vacuum system and the air outlet pipe, so that the inside of the sealed box 2 is under negative pressure. The Ar, H2, CH4 and TaCl5 in the gas source can enter the sealed box 2 through the air inlet pipe and finally leave the sealed box 2 through the air outlet pipe, so that the inside of the sealed box 2 forms a directional airflow from left to right. At the same time, under the cooperation of the vacuum system, the inside of the sealed box 2 can maintain the pressure required by chemical vapor deposition.

[0034] The rotating device 4 comprises a rotating table, a connecting shaft and a driving device. The rotating table is located at the lower area in the sealed box 2 and can carry the material to be deposited. The driving device is located below the furnace body 1 and can drive the rotating table to rotate through the connecting shaft. The material to be deposited can rotate together through the rotating table, and under the condition of the directional airflow, the airflow flowing through different positions on the surface of the material is relatively consistent.

[0035] The furnace body 1 can provide a suitable temperature for chemical vapor deposition, the gas conveying device 3 can provide Ar, H2, CH4 and TaCl5 required by chemical vapor deposition and pressure, and form a directional airflow from left to right in the sealed box 2, and the rotating device 4 can drive the material to rotate, so that the surface of the material can be uniformly deposited with a TaC coating.

[0036] The inside of the furnace body 1 and the sealed box 2 is vacuumized to a negative pressure state through the gas conveying device; the inside of the sealed box 2 is heated to 1500 DEG C through the furnace body 1; Ar, H2, CH4 and TaCl5 pass through the air inlet pipe, the sealed box 2 and the air outlet pipe in sequence through the gas conveying device, so that the inside of the sealed box 2 forms a directional airflow and maintains a pressure of 3KPa; at the same time, the rotating device 4 drives the material to rotate at a speed of 0.5RPM, so that the process gas flowing through different positions on the surface of the material is consistent; finally, the surface of the material is uniformly coated with a TaC coating through the chemical vapor deposition method.

[0037] In order to make the above-mentioned purposes, characteristics and advantages of the utility model more obvious and easy to understand, the utility model will be further described in detail below by combining with the drawings and specific embodiments.

[0038] Embodiment one:

[0039] As Figure 2As shown in this specific embodiment, the air intake splitter 5 includes an air intake splitter plate disposed on one side of the sealed box 2. An air intake buffer chamber is formed between the air intake splitter plate and the inner wall of one side of the sealed box 2. The bottom of the air intake buffer chamber is connected to the air intake pipe. Multiple air intake holes are provided on the air intake splitter plate. Two exhaust pipes are provided on the other side of the sealed box 2 and are connected to the vacuum system.

[0040] Example 2:

[0041] like Figure 3 As shown in this specific embodiment, the air intake splitter 5 includes an air intake splitter pipe disposed on one side of the sealed box 2. The bottom of the air intake splitter pipe is connected to the air intake pipeline, and multiple air intake holes are provided on the air intake splitter pipe. Two exhaust pipes are disposed on the other side of the sealed box 2 and are connected to the vacuum system.

[0042] Example 3:

[0043] like Figure 4 As shown in this specific embodiment, the exhaust diversion device 6 includes an exhaust diversion plate disposed on the other side of the sealed box 2. An exhaust buffer chamber is formed between the exhaust diversion plate and the inner wall of the other side of the sealed box 2. The bottom of the exhaust buffer chamber is connected to the exhaust pipe. Multiple exhaust holes are provided on the exhaust diversion plate. Two air inlet pipes are provided on one side of the sealed box 2, and the air inlet ends of the two air inlet pipes are connected to the air source.

[0044] Example 4:

[0045] like Figure 5 As shown in this specific embodiment, the exhaust diversion device 6 includes an exhaust diversion pipe disposed on the other side of the sealed box 2. The bottom of the exhaust diversion pipe is connected to the exhaust pipeline, and multiple exhaust holes are provided on the exhaust diversion pipe. Two air inlet pipes are disposed on one side of the sealed box 2, and the air inlet ends of the two air inlet pipes are connected to an air source.

[0046] Example 5:

[0047] like Figure 6 As shown in this specific embodiment, the intake splitting device 5 includes an intake splitting plate disposed on one side of the sealed box 2. An intake buffer chamber is formed between the intake splitting plate and the inner wall of one side of the sealed box 2. The bottom of the intake buffer chamber is connected to the intake pipe. Multiple intake holes are provided on the intake splitting plate. The exhaust splitting device 6 includes an exhaust splitting pipe disposed on the other side of the sealed box 2. The bottom of the exhaust splitting pipe is connected to the exhaust pipe. Multiple exhaust holes are provided on the exhaust splitting pipe.

[0048] Example 6:

[0049] like Figure 7As shown, in this embodiment, the air inlet shunt device 5 includes an air inlet shunt pipe arranged on one side of the sealed box 2, the bottom of the air inlet shunt pipe is communicated with the air inlet pipeline, and a plurality of air inlet holes are arranged on the air inlet shunt pipe. The air outlet shunt device 6 includes an air outlet shunt plate arranged on the other side of the sealed box 2, an air outlet buffer cavity is formed between the air outlet shunt plate and the inner wall of the other side of the sealed box 2, the bottom of the air outlet buffer cavity is communicated with the air outlet pipeline, and a plurality of air outlet holes are arranged on the air outlet shunt plate.

[0050] Embodiment seven:

[0051] As shown, in this embodiment, the air inlet shunt device 5 includes an air inlet shunt pipe arranged on one side of the sealed box 2, the bottom of the air inlet shunt pipe is communicated with the air inlet pipeline, and a plurality of air inlet holes are arranged on the air inlet shunt pipe. The air outlet shunt device 6 includes an air outlet shunt plate arranged on the other side of the sealed box 2, an air outlet buffer cavity is formed between the air outlet shunt plate and the inner wall of the other side of the sealed box 2, the bottom of the air outlet buffer cavity is communicated with the air outlet pipeline, and a plurality of air outlet holes are arranged on the air outlet shunt plate.

[0052] Embodiment eight:

[0053] As shown, in this embodiment, the air inlet shunt device 5 includes an air inlet shunt pipe arranged on one side of the sealed box 2, the bottom of the air inlet shunt pipe is communicated with the air inlet pipeline, and a plurality of air inlet holes are arranged on the air inlet shunt pipe. The air outlet shunt device 6 includes an air outlet shunt plate arranged on the other side of the sealed box 2, an air outlet buffer cavity is formed between the air outlet shunt plate and the inner wall of the other side of the sealed box 2, the bottom of the air outlet buffer cavity is communicated with the air outlet pipeline, and a plurality of air outlet holes are arranged on the air outlet shunt plate.

[0054] It should be noted that, for those skilled in the art, it is obvious that the present application is not limited to the details of the above exemplary embodiments, and can be implemented in other specific forms without departing from the spirit or essential characteristics of the present application. Therefore, from any point of view, the embodiments should be regarded as exemplary and non-limiting, the scope of the present application is defined by the appended claims rather than the above description, and therefore all changes falling within the meaning and scope of the equivalent elements of the claims are intended to be included in the present application, and any reference signs in the claims should not be regarded as limiting the claims.

[0055] The principles and implementation modes of the present application are described in the specific examples in the specification, and the above embodiment descriptions are only used to help understand the method of the present application and its core idea; at the same time, for those skilled in the art, according to the idea of the present application, the specific implementation modes and application ranges will be changed. In conclusion, the content of the specification should not be understood as a limitation of the present application.

Claims

1. A chemical vapor deposition furnace for preparing a TaC coating, characterized in that The furnace body, the sealed box, the gas conveying device, the rotating device, the gas inlet shunt device and the gas outlet shunt device; the sealed box is arranged in the furnace body, the rotating end of the rotating device extends into the sealed box; the gas inlet shunt device is arranged on one side of the furnace body and is communicated with the gas conveying device, and the gas outlet shunt device is arranged on the other side of the furnace body.

2. The chemical vapor deposition furnace for preparing a TaC coating according to claim 1, characterized in that, The gas inlet shunt device includes a gas inlet shunt plate arranged on one side of the sealed box, a gas inlet buffer cavity is formed between the gas inlet shunt plate and the inner wall on one side of the sealed box, the bottom of the gas inlet buffer cavity is communicated with the gas inlet pipeline, and a plurality of gas inlet holes are arranged on the gas inlet shunt plate.

3. The chemical vapor deposition furnace for preparing a TaC coating according to claim 1, characterized in that, The gas inlet shunt device includes a gas inlet shunt pipe arranged on one side of the sealed box, the bottom of the gas inlet shunt pipe is communicated with the gas inlet pipeline, and a plurality of gas inlet holes are arranged on the gas inlet shunt pipe.

4. The chemical vapor deposition furnace for preparing a TaC coating according to claim 1, characterized in that, The gas outlet shunt device includes a gas outlet shunt plate arranged on the other side of the sealed box, a gas outlet buffer cavity is formed between the gas outlet shunt plate and the inner wall on the other side of the sealed box, the bottom of the gas outlet buffer cavity is communicated with the gas outlet pipeline, and a plurality of gas outlet holes are arranged on the gas outlet shunt plate.

5. The chemical vapor deposition furnace for preparing a TaC coating according to claim 1, characterized in that, The gas outlet shunt device includes a gas outlet shunt pipe arranged on the other side of the sealed box, the bottom of the gas outlet shunt pipe is communicated with the gas outlet pipeline, and a plurality of gas outlet holes are arranged on the gas outlet shunt pipe.

6. The chemical vapor deposition furnace for preparing a TaC coating according to claim 1, characterized in that, The gas outlet shunt device is communicated with a vacuum system, and the vacuum system is used for vacuumizing the furnace body and the sealed box or controlling the pressure in the furnace body and the sealed box.

7. The chemical vapor deposition furnace for preparing a TaC coating according to claim 1, characterized in that, The gas inlet shunt device is communicated with a gas conveying device, and the gas conveying device includes a gas inlet pipe, a plurality of branch pipes are arranged on the gas inlet end of the gas inlet pipe, and the gas outlet end of the gas inlet pipe is communicated with the gas inlet shunt device.

8. The chemical vapor deposition furnace for preparing a TaC coating according to claim 1, characterized in that, The furnace body is a horizontal furnace.

9. The chemical vapor deposition furnace for preparing a TaC coating according to claim 1, characterized in that, The furnace body includes a furnace body and a furnace cover, and one end or both ends of the furnace body is provided with the furnace cover.

10. The chemical vapor deposition furnace for preparing a TaC coating according to claim 9, characterized in that, Water cooling jackets are arranged in the furnace body and the furnace cover.

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