Thermal field heat preservation mechanism and single crystal furnace

Abstract

The utility model provides a thermal field heat preservation mechanism and a single crystal furnace. The thermal field heat preservation mechanism is arranged on a furnace bottom plate of the single crystal furnace and comprises a heat insulation plate connected with the furnace bottom plate, and the heat insulation plate is provided with a hollow area; the felt fixing layer is arranged on the side, away from the furnace bottom plate, of the heat insulation plate, and the felt fixing layer is detachably connected with the heat insulation plate. The single crystal furnace solves the problem of large heat loss of the single crystal furnace in the prior art.

Description

TECHNICAL FIELD

[0001] The utility model relates to hot field heat preservation equipment technical field, specifically, relate to a hot field heat preservation mechanism and single crystal furnace. BACKGROUND

[0002] At present, as the core equipment in the single crystal growth process of semiconductor materials, solar photovoltaic materials and the like, the thermal field design of the single crystal furnace has a decisive influence on energy efficiency and crystal growth quality. In the single crystal growth process, high temperature is an indispensable condition, but the problem of heat loss that follows significantly increases energy consumption and reduces production efficiency. Under normal circumstances, the thermal field design of the single crystal furnace often fails to fully consider the strategy of reducing heat loss, resulting in low energy efficiency. SUMMARY

[0003] The main purpose of the utility model is to provide a kind of hot field heat preservation mechanism and single crystal furnace, to solve the problem of big heat loss of single crystal furnace in prior art.

[0004] In order to achieve the above purpose, according to one aspect of the utility model, a kind of hot field heat preservation mechanism is provided, and the hot field heat preservation mechanism is arranged on the furnace bottom plate of single crystal furnace, and the hot field heat preservation mechanism includes:

[0005] The heat insulation plate is connected with the furnace bottom plate, and the heat insulation plate has a hollow area;

[0006] The felt layer is arranged on the side of the heat insulation plate away from the furnace bottom plate, and the felt layer is detachably connected with the heat insulation plate.

[0007] Further, the area ratio of the hollow area to the area surrounded by the heat insulation plate is greater than or equal to 0.25 and less than or equal to 0.9.

[0008] Further, the heat insulation plate includes: a center ring;The supporting ring is coaxially sleeved on the outside of the center ring;A plurality of avoidance ribs, both ends of the avoidance rib are connected with the outer ring surface of the center ring and the inner ring surface of the supporting ring.

[0009] Further, the plurality of avoidance ribs includes at least two air cylinder avoidance ribs, and the air cylinder avoidance rib includes: a first connecting section, one end of the first connecting section is connected with the outer ring surface of the center ring;Air cylinder avoidance ring, the other end of the first connecting section is connected with the air cylinder avoidance ring, and the air cylinder avoidance ring is used for avoiding the air cylinder in the single crystal furnace;Second connecting section, both ends of the second connecting section are respectively connected with the air cylinder avoidance ring and the inner ring surface of the supporting ring.

[0010] Further, the plurality of avoiding ribs comprises at least one electrode avoiding rib, the electrode avoiding rib comprises: a third connecting segment, one end of the third connecting segment is connected with the outer ring surface of the center ring; an electrode avoiding ring, the other end of the third connecting segment is connected with the electrode avoiding ring, the electrode avoiding ring is used for avoiding the electrode in the single crystal furnace; and a fourth connecting segment, two ends of the fourth connecting segment are respectively connected with the electrode avoiding ring and the inner ring surface of the bearing ring.

[0011] Further, the area surrounded by the air cylinder avoiding ring is greater than the area surrounded by the electrode avoiding ring.

[0012] Further, at least one electrode avoiding rib is arranged between two adjacent air cylinder avoiding ribs.

[0013] Further, the heat insulation plate further comprises a plurality of connecting ribs, the electrode avoiding ring is connected with the adjacent electrode avoiding ring and / or the adjacent air cylinder avoiding ring through the connecting ribs.

[0014] Further, the heat insulation plate is a low-density carbon composite material, wherein the density of the low-density carbon composite material is greater than or equal to 1.5 g / cm 3 and less than or equal to 2.0 g / cm 3 .

[0015] According to another aspect of the present application, a single crystal furnace is provided, comprising the heat field heat preservation mechanism.

[0016] According to the technical scheme of the present application, the heat field heat preservation mechanism comprises a heat insulation plate and a felt fixing layer, the heat insulation plate is connected with the furnace bottom plate, and the heat insulation plate has a hollow region; the felt fixing layer is arranged on the side of the heat insulation plate away from the furnace bottom plate, and the felt fixing layer is detachably connected with the heat insulation plate.

[0017] Since the thermal conductivity of the felt fixing layer is higher than that of air, direct contact with the furnace bottom plate will form an efficient heat conduction path, and the heat insulation plate with the hollow region arranged between the felt fixing layer and the furnace bottom plate can interrupt or prolong the heat conduction path, thereby reducing the heat transfer speed from the hearth of the single-well furnace to the furnace bottom plate. The existence of the hollow structure reduces the area of contact between the felt fixing layer and the furnace bottom plate, thereby reducing the efficiency of heat conduction. Moreover, the hollow region of the heat insulation plate is filled with air, which is a good thermal insulation material and can effectively block the transfer of heat. At high temperatures, the thermal conductivity of air is relatively low, so an insulating layer with low thermal conductivity is formed between the felt fixing layer and the furnace bottom plate, thereby reducing the convective and radiative heat loss. BRIEF DESCRIPTION OF DRAWINGS

[0018] The drawings accompanying the specification of the present application form a part thereof, serve to provide further understanding of the present application, and together with the specification explain the application. The use of the same reference numerals in different drawings indicates similar or identical components. In the drawings:

[0019] Figure 1 The overall structure schematic diagram of the heat field heat preservation mechanism of one optional embodiment of the utility model is shown.

[0020] Figure 2 The overall structure schematic diagram of the heat field heat preservation mechanism of one optional embodiment of the utility model is shown. Figure 1 The angle sectional view of the heat field heat preservation mechanism is shown.

[0021] Figure 3 The overall structure schematic diagram of the heat field heat preservation mechanism of one optional embodiment of the utility model is shown. Figure 1 The structure schematic diagram of the heat insulation plate is shown.

[0022] Among them, the above-mentioned drawing includes the following figure marks:

[0023] 10, heat insulation plate; 11, center ring; 12, abutting ring; 13, air cylinder avoiding rib; 131, first connecting section; 132, air cylinder avoiding ring; 133, second connecting section; 14, electrode avoiding rib; 141, third connecting section; 142, electrode avoiding ring; 143, fourth connecting section; 15, connecting rib; 20, fixed felt layer; 21, center hole; 22, air cylinder avoiding hole; 23, electrode avoiding hole; 24, recessed groove part; 25, avoiding groove; 26, boss. DETAILED DESCRIPTION

[0024] It should be noted that the embodiments in the present application and the features in the embodiments can be combined with each other without conflict. The utility model will be described in detail below with reference to the drawings and in combination with the embodiments.

[0025] It should be noted that, unless otherwise specified, all technical and scientific terms used in the present application have the same meaning as generally understood by those skilled in the art to which the present application belongs.

[0026] In the utility model, unless otherwise stated, the orientation words such as "up, down, top, bottom" are generally for the direction shown in the drawing, or for the vertical, perpendicular or gravity direction of the component itself. Similarly, for the convenience of understanding and description, "inner, outer" refers to the inner and outer of the contour of each component itself, but the above-mentioned orientation words are not used to limit the utility model.

[0027] In the heat field design of the traditional single crystal furnace, the bottom fixed felt is directly placed on the furnace bottom plate of the single crystal furnace. Since the bottom fixed felt is a kind of heat conducting material, its thermal conductivity is much higher than that of air. This direct contact mode can accelerate the heat transfer from the high temperature zone to the low temperature zone, causing energy waste. Especially under long time high temperature operation, the influence of heat loss on energy efficiency is particularly significant.

[0028] In the operation process of the single crystal furnace, in addition to heat conduction, heat radiation and convection are also important ways of heat loss. In the traditional design, the air gap between the bottom felt and the furnace bottom plate is not enough to effectively prevent heat radiation and convection, resulting in heat loss and increasing the energy consumption required to maintain the temperature in the furnace.

[0029] In order to solve the problem of heat loss, the traditional heat field design often needs to use thicker insulation materials, which not only increases the material cost, but also increases the weight of the equipment, and puts higher requirements on the stability of the heat field. At the same time, the difficulty of maintenance and replacement of the insulation material also increases, affecting the operation efficiency of the equipment.

[0030] Therefore, in view of the above problems, especially the low energy efficiency caused by large heat loss, there is an urgent need for a new heat field design strategy that can effectively reduce heat loss while ensuring material bearing and heat field stability, improve energy utilization efficiency, reduce operating costs, and provide a more optimized thermal environment for single crystal growth. This not only has important significance for reducing the energy consumption of the single crystal furnace, but also has a direct impact on improving the uniformity, purity and final product quality of the crystal growth, and is a technical problem to be solved in the field of heat field design of single crystal furnace.

[0031] In order to solve the problem of large heat loss of the single crystal furnace in the prior art, the utility model provides a kind of heat field insulation mechanism and single crystal furnace.

[0032] As Figures 1 to 3 As shown in the figure, the heat field insulation mechanism includes a heat insulation plate 10 and a felt layer 20, the heat insulation plate 10 is connected with the furnace bottom plate, and the heat insulation plate 10 has a hollow area;The felt layer 20 is arranged on the side of the heat insulation plate 10 away from the furnace bottom plate, and the felt layer 20 is detachably connected with the heat insulation plate 10.

[0033] Because the thermal conductivity of the felt layer 20 is higher than that of air, direct contact with the furnace bottom plate will form an efficient heat conduction path, and the heat insulation plate 10 with a hollow area is arranged between the felt layer 20 and the furnace bottom plate, which can interrupt or prolong the heat conduction path, and reduce the transmission speed of heat from the hearth of the single well furnace to the furnace bottom plate. The existence of the hollow structure reduces the area of the felt layer 20 in contact with the furnace bottom plate, thereby reducing the efficiency of heat conduction. Moreover, the hollow area of the heat insulation plate 10 is filled with air, which is a good thermal insulation material and can effectively block the transfer of heat. At high temperatures, the thermal conductivity of air is relatively low, so an insulating layer with low thermal conductivity is formed between the felt layer 20 and the furnace bottom plate, reducing the convection and radiation loss of heat.

[0034] In the process of single crystal growth, it is crucial to maintain a temperature gradient from the top to the bottom of the furnace. By reducing the contact area between the heat field insulation mechanism and the furnace bottom plate, the temperature gradient can be better controlled and maintained, avoiding local overheating or local undercooling, which can lead to uneven crystal growth or defects. In the production process of semiconductor materials, the temperature control of the heat field is one of the key factors affecting the uniformity and quality of crystal growth. By reducing heat loss, the temperature of the growth environment can be more accurately controlled, thereby improving the uniformity and quality of crystal growth, which is very important for producing high-performance semiconductor materials.

[0035] In addition, the hollow area on the heat insulation plate 10 reduces the use of materials to some extent, reduces the cost, and also reduces the disturbance to the temperature stability of the heat field during maintenance or replacement.

[0036] In some optional embodiments, the ratio of the area of the hollow area to the area enclosed by the heat insulation plate 10 is greater than or equal to 0.25 and less than or equal to 0.9. That is, the contact area between the heat field insulation mechanism and the heat insulation plate 10 is reduced by 25% to 90%, which can effectively reduce the heat conduction of the heat field, reduce heat loss, and optimize the heat field distribution. It is particularly suitable for the CVD growth process of semiconductor materials. In the CVD (Chemical Vapor Deposition) growth process, precise control of the heat field is crucial to ensure the uniformity and purity of crystal growth. By reducing the contact area, the heat conduction between the heat field insulation mechanism and the furnace bottom plate can be reduced, the heat loss in the crystal growth area can be reduced, the temperature stability during crystal growth can be maintained, and the quality and efficiency of crystal growth can be improved. It is suitable for manufacturing high-performance electronic and optoelectronic devices such as high-speed transistors, lasers, and solar cells.

[0037] In some optional embodiments, please refer to Figure 3 , the heat insulation plate 10 includes a center ring 11 and a supporting ring 12 coaxially sleeved on the outside of the center ring 11; a plurality of avoiding ribs, the two ends of the avoiding ribs are connected with the outer ring surface of the center ring 11 and the inner ring surface of the supporting ring 12 respectively. The design of the center ring 11 and the supporting ring 12, combined with the layout of the plurality of avoiding ribs, forms a strong and light supporting structure that can withstand the weight of the felt layer 20 at high temperature, while minimizing the lateral conduction of heat energy and maintaining the heat concentration in the crystal growth area. This design performs particularly well in high-temperature and high-vacuum environments, ensuring temperature stability and uniformity during crystal growth, and is one of the key technologies for manufacturing high-quality single crystal silicon. The design of this heat insulation plate 10 helps to maintain the temperature uniformity and stability of the crystal growth area, avoiding changes in the temperature gradient caused by uneven lateral heat conduction, which is crucial for the high-quality growth of semiconductor materials such as single crystal silicon.

[0038] By reducing the direct contact area of the solid felt layer 20 with the furnace bottom plate and introducing multiple air isolation layers between the solid felt layer 20 and the furnace bottom plate, the lateral conduction path of heat energy is effectively controlled, so that most of the heat is concentrated in the crystal growth area, improving the thermal efficiency and crystal growth quality.

[0039] Specifically, the center ring 11 is located at the center position of the hot field component, and its main function is to provide support for the solid felt layer 20 in the center area and ensure the structural stability of the solid felt layer 20 under high temperature. The center ring 11 is designed as a ring shape, which can evenly distribute the weight of the solid felt layer 20 and avoid local overload, and the ring structure itself has good mechanical stability. The supporting ring 12 is designed on the periphery of the center ring 11, which increases the radial support strength of the structure and can bear the weight of the solid felt layer 20 to prevent structural deformation caused by high temperature. While ensuring sufficient bearing capacity, the use of materials is minimized to reduce thermal conductivity and reduce lateral heat conduction. Multiple avoidance ribs are designed between the center ring 11 and the supporting ring 12. The layout of these avoidance ribs is carefully designed to provide sufficient support while minimizing material use to reduce lateral heat conduction. The shape and distribution of the avoidance ribs can ensure that the weight is supported while forming multiple air isolation layers, using the low thermal conductivity of air as a thermal insulation medium to reduce heat loss.

[0040] In addition, the center ring 11, the supporting ring 12 and the avoidance ribs are made of low-density carbon composite material. This material not only has excellent high-temperature resistance and can withstand the use requirements of the single crystal furnace under high-temperature environment, but also has low density, which can reduce the weight of the entire structure and reduce the burden on the support frame. At the same time, the thermal conductivity of carbon composite material is relatively low, which helps to reduce heat conduction.

[0041] In summary, the combination of the center ring 11, the supporting ring 12 and the avoidance ribs, through the selection of materials and the optimization of structure design, forms a solid and light heat insulation plate 10 that can not only bear the weight of the solid felt layer under high temperature, but also significantly reduce the lateral conduction of heat energy and maintain the heat concentration in the crystal growth area. This design is of great significance to improve the thermal efficiency and crystal growth quality of the single crystal furnace.

[0042] In an alternative embodiment, please refer to Figure 3The plurality of avoiding ribs includes at least two cylinder avoiding ribs 13, which include a first connecting section 131, a cylinder avoiding ring 132, and a second connecting section 133. One end of the first connecting section 131 is connected to the outer ring surface of the central ring 11. The other end of the first connecting section 131 is connected to the cylinder avoiding ring 132, which is used to avoid the cylinders in the single crystal furnace. The two ends of the second connecting section 133 are respectively connected to the cylinder avoiding ring 132 and the inner ring surface of the bearing ring 12. During the operation of the single crystal furnace, multiple cylinders are needed to provide multiple gases to the furnace chamber to control the atmosphere for single crystal growth. Some of these cylinders will extend to the furnace bottom plate. In the design of the heat field insulation mechanism, the avoidance of the cylinders is considered to ensure that the cylinders can smoothly extend to the furnace bottom plate. The cylinder avoiding ring 132 in the present application not only avoids the cylinders to prevent interference between the heat insulation plate 10 and the cylinders, but also supports or fixes the cylinders when the cylinders are arranged in the cylinder avoiding ring 132.

[0043] The design of the cylinder avoiding rib 13 mainly considers how to provide good heat field support and thermal insulation effect without affecting the normal operation of the cylinder. Specifically, the cylinder avoiding rib 13 needs to avoid the position of the cylinder while supporting or fixing the cylinder. At the same time, the existence of the cylinder avoiding rib 13 reduces the contact area between the heat insulation plate 10 and the furnace bottom plate, reduces heat conduction, and thus helps to reduce heat loss and improve the heat preservation performance of the heat field. In the design, the position, shape and number of the cylinder avoiding rib 13 need to be matched with the cylinder layout of the single crystal furnace to ensure that necessary support can be provided and interference with the gas delivery path can be avoided, maintaining the stability and efficiency of gas supply. This design can optimize the thermal environment and atmosphere control of the single crystal furnace, and has a positive effect on improving the uniformity and quality of crystal growth.

[0044] In an optional embodiment, please refer to Figure 3, the plurality of avoiding ribs includes at least one electrode avoiding rib 14, the electrode avoiding rib 14 including a third connecting segment 141, an electrode avoiding ring 142, and a fourth connecting segment 143, one end of the third connecting segment 141 being connected with the outer ring surface of the center ring 11, the other end of the third connecting segment 141 being connected with the electrode avoiding ring 142, the electrode avoiding ring 142 being used for avoiding the electrodes in the single crystal furnace, and the two ends of the fourth connecting segment 143 being respectively connected with the electrode avoiding ring 142 and the inner ring surface of the bearing ring 12. In the single crystal furnace, the electrodes are mainly used for providing the required power for heating and controlling the electric field environment in the crystal growth process, and they are indispensable components in the single crystal growth system. The design of the electrode avoiding rib 14 is to optimize the thermal field structure, reduce the heat loss, and improve the energy efficiency without interfering with the function of the electrodes. The design of the electrode avoiding rib 14 can ensure that the electrodes in the single crystal furnace are not affected by the heat of the heat insulation plate, reduce the thermal load of the electrodes, and prolong the service life of the electrodes, which is suitable for the crystal growth process requiring high-power heating, such as the Czochralski method for growing single crystal silicon. In the Czochralski method, the stability and thermal load control of the electrodes have a direct impact on the crystal growth rate and quality, and by adopting the design, the temperature around the electrodes can be effectively controlled, the uniformity of crystal growth can be improved, and the stress in the crystal can be reduced, thereby producing high-quality single crystal silicon wafers, which are widely used in the fields of integrated circuits, solar cells, and optoelectronic materials. In the design, the position, shape, and number of the electrode avoiding rib 14 need to be matched with the electrode layout of the single crystal furnace to ensure the normal work of the electrodes and maintain the electric heating environment required for crystal growth, thereby improving the thermal efficiency while ensuring the stability and quality of the crystal growth process.

[0045] In an optional embodiment, referring to Figure 3 , the area surrounded by the gas cylinder avoiding ring 132 is larger than the area surrounded by the electrode avoiding ring 142. Generally, the cross-sectional area of the gas cylinder is larger than that of the electrode, and such a design facilitates the gas cylinder passing through the gas cylinder avoiding ring 132 and the electrode passing through the electrode avoiding ring 142. In addition, such a design can ensure that the thermal field around the gas cylinder is more uniform, reducing the temperature fluctuations caused by the gas cylinder, and is suitable for the crystal growth process requiring a stable gas environment, such as the epitaxial growth of semiconductor materials. The area design of the gas cylinder avoiding ring 132 and the electrode avoiding ring 142 fully considers the requirements of gas flow and electric field distribution in the crystal growth process, ensures the uniformity of the thermal field around the gas cylinder, and reduces temperature fluctuations. The design optimizes the thermal field distribution around the gas cylinder, improves the uniformity of gas flow, effectively controls the electric field and gas field in the crystal growth process, and is beneficial to the uniform growth and performance optimization of the crystal.

[0046] In some optional embodiments, referring to Figure 3, at least one electrode avoiding rib 14 is arranged between two adjacent gas cylinder avoiding ribs 13. By reasonably arranging the gas cylinder avoiding ribs 13 and the electrode avoiding ribs 14, the thermal interference between the electrodes and the gas cylinders can be effectively reduced, and the crystal growth process which needs to control the electric field and the gas field at the same time, such as the MOCVD growth of semiconductor materials, can be applied. In the MOCVD (metal organic chemical vapor deposition) growth process, the accurate control of the electric field and the gas field is the key to ensure the uniformity and purity of the crystal growth. The design reduces the thermal interference, improves the stability and controllability of the crystal growth conditions in the MOCVD growth process, produces high-quality and high-purity semiconductor materials, and is suitable for manufacturing high-performance optoelectronic devices and optical communication equipment.

[0047] In some optional embodiments, referring to Figure 3 , the heat insulation plate 10 further comprises a plurality of connecting ribs 15, and the electrode avoiding ring 142 is connected between the adjacent electrode avoiding ring 142 and / or the adjacent gas cylinder avoiding ring 132 through the connecting rib 15. The design of the connecting rib 15 enhances the structural stability of the heat insulation plate 10 in a high-temperature environment, reduces the deformation caused by temperature changes, and is suitable for long-time and high-temperature crystal growth process. The design effectively controls the thermal field distribution under high temperature by enhancing the overall strength of the heat insulation plate 10, reduces the thermal stress in the crystal growth process, and improves the growth quality of the single crystal.

[0048] In some optional embodiments, the heat insulation plate 10 is a low-density carbon composite material. The low-density carbon composite material not only has excellent heat insulation performance, but also significantly reduces the energy consumption of the single crystal furnace due to its lightweight characteristics, and is suitable for crystal growth processes that pursue high efficiency and low energy consumption, such as the preparation of solar-grade silicon single crystals. In the production process of solar-grade silicon single crystals, energy consumption is one of the key factors in cost control. The design effectively reduces the weight of the heat insulation plate 10 by using a low-density carbon composite material, reduces the thermal load of the single crystal furnace, reduces energy consumption, improves production efficiency, and reduces production cost, providing technical support for large-scale production of solar-grade silicon single crystals and promoting the development of renewable energy industry.

[0049] In some optional embodiments, the density of the low-density carbon composite material is greater than or equal to 1.5 g / cm 3 and less than or equal to 2.0 g / cm 3 . The density is preferably 1.5 g / cm 3 to 2.0 g / cm 3The carbon composite material not only has good thermal insulation performance, but also can provide sufficient strength, which is suitable for most crystal growth processes, such as the growth of silicon single crystal, gallium arsenide single crystal, and other crystal growth processes with high requirements for thermal field control. This density range of material can realize effective isolation and utilization of thermal energy under the premise of ensuring structural stability and thermal field uniformity, reduce energy consumption, and improve the efficiency and quality of crystal growth. For the growth of semiconductor materials such as silicon single crystal and gallium arsenide single crystal, a specific density range can ensure accurate temperature control during crystal growth, reduce crystal defects, and improve the purity and performance of the material, which is suitable for manufacturing high-performance electronic devices, optoelectronic devices, and solar cells. For example, the low-density carbon composite material is graphite.

[0050] As shown in Figure 1 and Figure 2 , the solid felt layer 20 has a central hole 21 coaxially arranged with the central ring 11, and the central hole 21 and the central ring 11 are used to avoid the pull rod in the single crystal furnace, and the pull rod is arranged in series in the central hole 21 and the central ring 11.

[0051] As shown in Figure 1 , the solid felt layer 20 further includes at least two air cylinder avoiding holes 22 and a plurality of electrode avoiding holes 23, each air cylinder avoiding hole 22 is coaxially arranged with each air cylinder avoiding ring 132, and the air cylinder is arranged in the air cylinder avoiding hole 22 and the air cylinder avoiding ring 132, and each electrode avoiding hole 23 is coaxially arranged with each electrode avoiding ring 142, and the electrode is arranged in the electrode avoiding hole 23 and the electrode avoiding ring 142.

[0052] As shown in Figure 2 , the surface of the solid felt layer 20 towards the side of the heat insulation plate 10 has a groove part 24, the arrangement of the groove part 24 can reduce the contact area between the solid felt layer 20 and the heat insulation plate 10, which is conducive to reducing the heat transfer between the solid felt layer 20 and the heat insulation plate 10.

[0053] As shown in Figure 1 and Figure 2 , the surface of the solid felt layer 20 towards the side of the heat insulation plate 10 has a plurality of avoiding grooves 25, the plurality of avoiding grooves 25 are arranged at intervals around the circumferential direction of the groove part 24, and the avoiding grooves 25 are in communication with the outer circumferential surface of the heat insulation plate 10, so as to facilitate the removal of the solid felt layer 20 from the heat insulation plate 10.

[0054] As shown in Figure 1 and Figure 2 , the surface of the solid felt layer 20 away from the side of the heat insulation plate 10 has a boss 26, the boss 26 extends into the growth chamber of the single crystal furnace, so as to facilitate the stable connection of the growth chamber with the thermal field insulation mechanism. The orthographic projection of the boss 26 on the heat insulation plate 10 completely coincides with the orthographic projection of the groove part 24 on the heat insulation plate 10, and the central hole 21, the air cylinder avoiding hole 22 and the electrode avoiding hole 23 are all located on the boss 26.

[0055] In an embodiment of the utility model, the single crystal furnace comprises the heat field insulation mechanism. The heat field insulation mechanism can significantly improve the thermal efficiency of the single crystal furnace, reduce energy consumption, prolong the service life of the equipment, and is suitable for various types of single crystal furnaces, especially in high-quality production of semiconductor materials, can significantly improve the uniformity and quality of crystal growth, and provides strong technical support for the development of the semiconductor industry.

[0056] The heat field insulation mechanism is integrated in the single crystal furnace, which can significantly improve the thermal efficiency, reduce energy consumption, prolong the service life of the equipment, improve the uniformity and quality of crystal growth, and is suitable for various types of single crystal furnaces, especially in high-quality production of semiconductor materials. The heat field insulation mechanism optimizes the heat field distribution, reduces the lateral loss of heat energy, maintains the temperature stability during crystal growth, improves the consistency and controllability of crystal growth, reduces crystal defects, and produces high-quality and high-purity semiconductor materials. In the semiconductor industry, high-quality crystal materials are the basis for manufacturing high-performance electronic devices and integrated circuits. The application of the design can significantly improve the growth efficiency and performance of semiconductor materials, reduce production costs, and provide strong technical support for the technological innovation and high-quality production of the semiconductor industry.

[0057] Obviously, the above-described embodiments are only part of the embodiments of the utility model, not all. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor should belong to the scope of protection of the utility model.

[0058] It should be noted that the terms used herein are only for describing specific embodiments, and are not intended to limit the exemplary embodiments according to the present application. As used herein, the singular form is intended to include the plural form unless the context clearly indicates otherwise, and it should be understood that when the terms "comprise" and / or "include" are used in the specification, there is a feature, step, work, device, component and / or combination thereof.

[0059] It should be noted that the terms "first", "second" and the like in the specification and claims of the present application and the above-described drawings are used to distinguish similar objects, and do not necessarily describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the application described herein can be implemented in an order other than those illustrated or described herein.

[0060] The above merely describes preferred embodiments of the present application and is not intended to limit the present application. For those skilled in the art, the present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A thermal field holding mechanism characterized by, The heat field insulation mechanism is arranged on a furnace bottom plate of a single crystal furnace, and comprises: A heat insulation plate (10) connected with the furnace bottom plate, the heat insulation plate (10) having a hollow region; A fixed felt layer (20) arranged on a side of the heat insulation plate (10) away from the furnace bottom plate, and the fixed felt layer (20) being detachably connected with the heat insulation plate (10).

2. The thermal field socket assembly of claim 1, wherein, The ratio of the area of the hollow region to the area surrounded by the heat insulation plate (10) is greater than or equal to 0.25 and less than or equal to 0.

9.

3. The thermal field socket assembly of claim 1, wherein, The heat insulation plate (10) comprises: A center ring (11); A bearing ring (12) coaxially sleeved on the outside of the center ring (11); A plurality of avoiding ribs, both ends of the avoiding ribs being connected with the outer ring surface of the center ring (11) and the inner ring surface of the bearing ring (12) respectively.

4. The thermal field socket assembly of claim 3, wherein, The plurality of avoiding ribs comprises at least two cylinder avoiding ribs (13), and the cylinder avoiding rib (13) comprises: A first connecting section (131) having one end connected with the outer ring surface of the center ring (11); A cylinder avoiding ring (132) connected with the other end of the first connecting section (131), the cylinder avoiding ring (132) being used for avoiding a cylinder in the single crystal furnace; A second connecting section (133) having both ends connected with the cylinder avoiding ring (132) and the inner ring surface of the bearing ring (12) respectively.

5. The thermal field socket assembly of claim 4, wherein, The plurality of avoiding ribs comprises at least one electrode avoiding rib (14), and the electrode avoiding rib (14) comprises: A third connecting section (141) having one end connected with the outer ring surface of the center ring (11); An electrode avoiding ring (142) connected with the other end of the third connecting section (141), the electrode avoiding ring (142) being used for avoiding an electrode in the single crystal furnace; A fourth connecting section (143) having both ends connected with the electrode avoiding ring (142) and the inner ring surface of the bearing ring (12) respectively.

6. The thermal field socket assembly of claim 5, wherein, The area surrounded by the cylinder avoiding ring (132) is greater than the area surrounded by the electrode avoiding ring (142).

7. The thermal field socket assembly of claim 5, wherein: There is at least one electrode avoiding rib (14) between adjacent two cylinder avoiding ribs (13).

8. The thermal field socket assembly of claim 5, wherein, The heat insulation plate (10) further comprises a plurality of connecting ribs (15), and the electrode avoiding ring (142) is connected with adjacent electrode avoiding rings (142) and / or adjacent cylinder avoiding rings (132) through the connecting ribs (15).

9. The thermal field socket assembly of any one of claims 1 to 8, wherein, The thermal insulation panel (10) is a low-density carbon composite material, wherein the low-density carbon composite material has a density greater than or equal to 1.5 g / cm 3 and less than or equal to 2.0 g / cm 3 .

10. A single crystal furnace characterized by comprising: The heat field insulation mechanism comprises the heat field insulation mechanism according to any one of claims 1 to 9.

Images