Microstructure semiconductor laser bar detection probe
By designing a probe for detecting bars in a microstructured semiconductor laser, and utilizing an elastic conductive material to contact the bar, the problem of probe damage to the appearance is solved, achieving high-precision testing and ensuring device quality.
Patent Information
- Application Number
- CN202422875953.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-25
- Publication Date
- 2025-11-25
- Estimated Expiration
- 2034-11-25
AI Technical Summary
Existing bar detection methods suffer from probe damage to the appearance of the bar, resulting in cost losses and a high rate of false negatives.
A microstructured semiconductor laser bar detection probe is used, comprising a detector, a base, a metal probe, and an elastic conductive material. The elastic conductive material contacts the light-emitting point of the bar, and the elastic contact and self-adaptability improve the contact relationship between the probe and the P-side of the bar, thus avoiding damage.
To ensure testing accuracy, increase the contact area, reduce contact resistance, ensure device quality and appearance integrity, and improve testing reliability.
Smart Images
Figure CN223597152U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to the technical field of semiconductor laser bar detection, and particularly relates to a microstructure semiconductor laser bar detection probe. BACKGROUND
[0002] With diversified application of semiconductor lasers, the market demands more and more power of semiconductor lasers. As an effective way to realize high-power semiconductor lasers, the bar is affected by various factors such as its size and process in actual production, and shows problems such as low yield and high cost. In addition, more detection consumption makes the final obtained devices very few. If the detection method can be optimized and the detection consumption can be reduced, the yield can be increased while the quality of the devices is ensured. Therefore, the production detection optimization is particularly important for the bar. At present, the detection optimization of the bar is concentrated in packaging, test table, performance test system and the like, and the optimization of the probe is very few.
[0003] At present, the existing bar detection mode is mainly probe detection, and the bar after the probe detection will form irreversible appearance damage on the P surface, causing unnecessary cost loss. In actual production, in order to reduce the cost loss caused by the detection, a small amount of sampling inspection is generally selected for detection, but this will lead to an increased missed detection rate and cause certain risks to the quality guarantee of the devices. SUMMARY
[0004] In order to overcome the appearance damage of the bar caused by the bar detection probe, the utility model provides a microstructure semiconductor laser bar detection probe.
[0005] The utility model solves the technical problems by adopting the following technical scheme:
[0006] A microstructure semiconductor laser bar detection probe, comprising a detector, a base, a metal probe and an elastic conductive material.
[0007] The detector, the base, the metal probe and the elastic conductive material are connected in sequence.
[0008] During detection, the elastic conductive material contacts the light emitting point of the bar to inject current.
[0009] The detector is used for sensing the contact pressure of the elastic conductive material and the P surface bar of the microstructure semiconductor laser, the base is used for fixed loading with external equipment, and the metal probe is used for conductive detection.
[0010] The metal probe is T-shaped, and the T-shaped head is connected with the elastic conductive material.
[0011] The microstructure semiconductor laser bar detection probe, wherein the detector is a pressure detector.
[0012] The microstructure semiconductor laser bar detection probe, the metal probe is a whole structure, which can be divided into an upper part and a lower part.
[0013] The microstructure semiconductor laser bar detection probe, the elastic conductive material is connected with the lower part of the metal probe, the connecting surface is a plane, and the upper surface of the elastic conductive material is matched with the size of the lower part of the metal probe.
[0014] The microstructure semiconductor laser bar detection probe, the elastic conductive material is connected with the lower part of the metal probe, the connecting surface is a plane, and the upper surface of the elastic conductive material is matched with the size of the lower part of the metal probe.
[0015] The microstructure semiconductor laser bar detection probe, the elastic conductive material is connected with the lower part of the metal probe, the connecting surface is a plane, and the upper surface of the elastic conductive material is matched with the size of the lower part of the metal probe.
[0016] The microstructure semiconductor laser bar detection probe, the elastic conductive material is connected with the lower part of the metal probe, the connecting surface is a plane, and the upper surface of the elastic conductive material is matched with the size of the lower part of the metal probe.
[0017] The microstructure semiconductor laser bar detection probe, the elastic conductive material is connected with the lower part of the metal probe, the connecting surface is a plane, and the upper surface of the elastic conductive material is matched with the size of the lower part of the metal probe.
[0018] The microstructure semiconductor laser bar detection probe, the elastic conductive material is connected with the lower part of the metal probe, the connecting surface is a plane, and the upper surface of the elastic conductive material is matched with the size of the lower part of the metal probe. BRIEF DESCRIPTION OF DRAWINGS
[0019] Figure 1 is a detection probe structure schematic view of an embodiment of the utility model;
[0020] Figure 2 is a bar light emitting point contact schematic view of an embodiment of the utility model;
[0021] Figure 3 is a bar light emitting point contact schematic view of an embodiment of the utility model;
[0022] Figure 4 is a detection probe structure schematic view of an embodiment of the utility model;
[0023] Figure 5 is a bar light emitting point contact schematic view of an embodiment of the utility model;
[0024] Reference numerals: 1. Detector, 2. Base, 3. Metal probe, 4. Elastic conductive material, 5. Bar light-emitting point. Detailed Implementation
[0025] The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments.
[0026] Example 1
[0027] This invention provides a novel microstructure nondestructive testing probe for inspecting bars in semiconductor lasers. The probe comprises a T-shaped probe, an elastic guide head, a probe base, and a pressure sensing device. This invention utilizes the elastic spherical contact surface and self-adaptability of the microstructure probe to effectively improve the contact relationship between the probe and the P-side of the bar, ensuring the integrity of the bar's appearance before and after testing. Furthermore, the larger contact area effectively improves testing accuracy, which is significant in enhancing testing reliability. In addition, the application of this probe provides a reliable technical foundation for full inspection and single-tube screening of bars during the production process.
[0028] This invention provides a microstructured semiconductor laser bar detection probe, the basic structure of which is as follows: Figure 1 As shown.
[0029] Pressure detector 1 is used to sense the contact between the probe and the P-side of the chip.
[0030] Probe base 2 is used to fix the mounted probe.
[0031] The T-shaped metal probe 3 serves to provide support and conduct electricity.
[0032] The elastic conductive material 4 is used to contact the P-side of the bar and inject current.
[0033] 5 is a luminous point of the bar.
[0034] During testing, the base 2 is electrically connected to the external testing equipment, and current is injected through the metal probe 3.
[0035] The probe provided by this invention can effectively increase the contact area, reduce the contact resistance, and provides elastic contact, thus avoiding damage to the probe surface. For example... Figures 2-4 As shown, under pressure, the elastic conductive material 4 slowly deforms and comes into full contact with the surface of the bar.
[0036] Previous probes such as Figure 5 As shown, the probe will insert into the bar injection area, damaging the appearance of the bar, and the contact resistance is large, resulting in low test accuracy.
[0037] The probe provided by this invention can effectively increase the contact area, reduce the contact resistance, and increase the test accuracy. Moreover, the contact between the probe and the bar is elastic, which will not damage the surface of the bar.
Claims
1. A microstructure semiconductor laser bar detection probe, characterized by, The probe (1), the base (2), the metal probe (3), and the elastic conductive material (4) are sequentially connected. During detection, the elastic conductive material (4) is in contact with the detection bar light-emitting point (5), the base (2) is electrically connected with an external testing device, and the metal probe (3) is used for injecting current. The probe (1) is used for sensing the contact pressure of the elastic conductive material (4) and the microstructure semiconductor laser P-face bar, the base (2) is used for fixed loading with an external device, and the metal probe (3) is used for conductive detection. The metal probe (3) is T-shaped, and the T-shaped head is connected with the elastic conductive material (4). The probe (1) is a pressure probe.
2. The microstructure semiconductor laser bar test probe according to claim 1, wherein The metal probe (3) is a whole structure, which can be divided into an upper part and a lower part; the upper part is connected with the base (2), and the upper part and the lower part are both flat plate-shaped cubes, the upper part and the lower part are perpendicular, and the lower part is horizontally placed and parallel to the microstructure semiconductor laser P-face.
3. The microstructure semiconductor laser bar test probe of claim 1, wherein The elastic conductive material (4) is connected with the lower part of the metal probe (3), the connecting surface is a plane, the upper surface of the elastic conductive material (4) is matched with the lower part of the metal probe (3) in size, and the lower surface of the elastic conductive material (4) is an arc surface and is in contact with the bar light-emitting point (5).
4. The microstructure semiconductor laser bar test probe of claim 3, wherein, The elastic conductive material (4) is in elastic contact with the detection bar light-emitting point (5); during the contact, 5. The microstructure semiconductor laser bar test probe of claim 4, wherein, The elastic conductive material (4) can be deformed.