Annealing device and perovskite battery processing equipment

Abstract

The utility model discloses an annealing device and perovskite battery processing equipment, the annealing device comprises a heating bin and a conductive assembly, and the heating bin is provided with an accommodating cavity; the conductive assembly is arranged in the containing cavity and comprises a driving part, a positive electrode connecting part and a negative electrode connecting part, and the positive electrode connecting part and the negative electrode connecting part are connected with the driving part. And the driving part can drive the positive electrode connecting part and the negative electrode connecting part to move in the accommodating cavity until the positive electrode connecting part and the negative electrode connecting part are electrically connected with the conductive substrate. According to the annealing device provided by the embodiment of the invention, the product yield and the processing efficiency can be improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of batteries, in particular to an annealing device and a perovskite battery processing equipment. BACKGROUND

[0002] With the development of clean energy technology, solar cells are increasingly widely used, and perovskite cells have attracted widespread attention due to their high photoelectric conversion efficiency and low cost. In the processing of perovskite solar cells, the perovskite film substrate usually needs to be heated and annealed to grow crystals. In this process step, the uniformity of heating is an important indicator, which will directly affect the uniformity of the perovskite film layer obtained.

[0003] Therefore, how to improve the heating uniformity of the perovskite film substrate is an important research direction in the field of photoelectric cells. CONTENT OF THE INVENTION

[0004] The present application provides an annealing device and a perovskite battery processing equipment, which can improve product yield and processing efficiency.

[0005] In a first aspect, the present application provides an annealing device for heating a perovskite film layer arranged on a conductive substrate, the annealing device comprising a heating chamber and a conductive assembly, the heating chamber having a receiving cavity; the conductive assembly is arranged in the receiving cavity and comprises a driving part, a positive electrode connecting part and a negative electrode connecting part, the positive electrode connecting part and the negative electrode connecting part are respectively arranged with the driving part, and the driving part can drive the positive electrode connecting part and the negative electrode connecting part to move in the receiving cavity to be electrically connected with the conductive substrate.

[0006] In the technical solution of the present application, the annealing device is used to heat the perovskite film layer arranged on the conductive substrate, and the annealing device comprises a heating chamber for accommodating the perovskite film layer and a conductive assembly for applying an electrical signal to the conductive substrate. The conductive assembly comprises a positive electrode connecting part, a negative electrode connecting part and a driving part for driving the two parts to be electrically connected with the conductive substrate. By electrically connecting the positive electrode connecting part and the negative electrode connecting part with the conductive substrate respectively, the conductive substrate can be connected to the circuit, and the perovskite film layer can be heated by the Joule heat generated after the conductive substrate is powered on. Therefore, the perovskite film layer can be heated uniformly and with high efficiency.

[0007] According to some embodiments of the present application, the conductive assembly comprises a support part and a plurality of driving parts, the plurality of driving parts are respectively movably connected to the support part, and the positive electrode connecting part and the negative electrode connecting part are respectively arranged with the driving parts one by one. The positive electrode connecting part and the negative electrode connecting part are arranged in different driving parts to make them move flexibly.

[0008] According to some embodiments of the present application, the plurality of driving portions are oppositely arranged in a first direction, the driving portions have a moving degree of freedom in a second direction relative to the supporting portion, the positive electrode connecting portion and the negative electrode connecting portion have a moving degree of freedom in a thickness direction of the supporting portion relative to the driving portion, and the first direction, the second direction, and the thickness direction are arranged to intersect with each other. The positive electrode connecting portion and the negative electrode connecting portion have a moving degree of freedom in the second direction and the thickness direction relative to the supporting portion, so as to improve the moving flexibility of the two connecting portions and the applicability of the annealing device.

[0009] According to some embodiments of the present application, the positive electrode connecting portion includes a plurality of positive electrode probes, and the negative electrode connecting portion includes a plurality of negative electrode probes. The positive electrode probes and the negative electrode probes both extend along the thickness direction, and at least part of the positive electrode probes and at least part of the negative electrode probes are arranged in sequence along the second direction, respectively. The plurality of probes are used for electrical connection at the same time, so as to reduce the possibility that the overall electrical connection is disconnected due to damage of a certain probe.

[0010] According to some embodiments of the present application, the supporting portion includes a first sliding rail, the driving portion includes a second sliding rail, the first sliding rail is in sliding cooperation with the driving portion, and the plurality of second sliding rails are in sliding cooperation with the positive electrode connecting portion and the negative electrode connecting portion, respectively. The relative movement is realized through the sliding rails, so as to make the movement of the positive electrode connecting portion and the negative electrode connecting portion stable and not prone to collision.

[0011] According to some embodiments of the present application, the conductive assembly includes two driving portions, and the positive electrode connecting portion and the negative electrode connecting portion are arranged on the side close to each other of the two driving portions, respectively. The space required by the conductive assembly is reduced, and the two connecting portions with opposite polarities are arranged on the two sides of the conductive substrate, respectively.

[0012] According to some embodiments of the present application, the supporting portion includes a supporting plate and a plurality of convex portions arranged at intervals. The convex portions protrude from the surface of the supporting plate facing the positive electrode connecting portion and the negative electrode connecting portion, and are used for supporting the conductive substrate. The conductive substrate is supported by the plurality of convex portions, so as to reduce the possibility that heat is dissipated from the contact.

[0013] According to some embodiments of the present application, at least part of the convex portions are provided with a temperature sensor on the side end portion away from the supporting plate. The temperature of the conductive substrate is monitored in real time by the temperature sensor, so as to improve the accuracy of temperature control.

[0014] According to some embodiments of the present application, the melting point of the convex portion is greater than or equal to 200 ℃. The possibility that the conductive substrate is inclined due to deformation of the convex portion in the annealing process is reduced.

[0015] According to some embodiments of the present application, each positive electrode connecting part and each negative electrode connecting part further comprises a voltage sensor, the annealing device further comprises a controller, and the plurality of voltage sensors are in communication connection with the controller. The voltage sensor is used to monitor the current applied to the conductive substrate in real time, thereby improving the accuracy of temperature control.

[0016] According to some embodiments of the present application, the heating bin further comprises a heat preservation layer, and the heat preservation layer is connected to the cavity wall of the accommodating cavity. The heat preservation layer is used to maintain the temperature in the accommodating cavity, thereby slowing down the speed of heat loss.

[0017] According to some embodiments of the present application, the heating bin comprises a plurality of exhaust channels, and the exhaust channels are communicated between the cavity wall of the accommodating cavity and the outer peripheral surface of the heating bin. The exhaust channels are used to fill the protective gas and other substances into the accommodating cavity, thereby further improving the processing yield.

[0018] According to some embodiments of the present application, the annealing device further comprises a cooling assembly, and the cooling assembly is arranged on one side of the heating bin. The cooling assembly comprises a plurality of cooling supports, and the plurality of cooling supports are arranged in the thickness direction of the cooling supports. The cooling assembly is used to cool the perovskite film layer to room temperature or other preset temperature after annealing, so as to facilitate the next process.

[0019] According to some embodiments of the present application, the annealing device further comprises two transmission assemblies, and the two transmission assemblies are arranged upstream of the heating bin and downstream of the cooling assembly, respectively. The transmission assembly comprises a support, and the melting point of the support in the transmission assembly arranged downstream of the cooling assembly is higher than the melting point of the support in the transmission assembly arranged upstream of the heating bin. The transmission assembly arranged downstream has a higher melting point, so as to support the conductive substrate with a higher temperature after annealing.

[0020] According to some embodiments of the present application, the annealing device further comprises a transplanting assembly, and the transplanting assembly is used to move the conductive substrate and the perovskite film layer. The transplanting assembly can move in the arrangement direction of the heating bin and the cooling assembly. The transplanting assembly is used to move the perovskite film layer between the modules, thereby facilitating automation.

[0021] In the second aspect, the present application provides a perovskite battery processing equipment, which comprises a film coating mechanism, a drying mechanism and the annealing device of any one of the embodiments of the first aspect. The film coating mechanism is used to form a perovskite film layer substrate on a conductive substrate. The drying mechanism is arranged downstream of the film coating mechanism and is used to dry the perovskite film layer substrate to obtain a perovskite film layer. The annealing device is arranged downstream of the drying mechanism. BRIEF DESCRIPTION OF DRAWINGS

[0022] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments with reference made to the accompanying drawings. The drawings are for purposes of illustration only and are not intended to limit the scope of the present application. The same reference numbers in different drawings identify the same components. In the drawings:

[0023] Figure 1 Structure diagram of annealing device provided for some embodiments of the present application;

[0024] Figure 2 Structure diagram of conductive assembly provided for some embodiments of the present application;

[0025] Figure 3 Partial structure diagram of conductive assembly provided for some embodiments of the present application;

[0026] Figure 4 Structure diagram of cooling assembly provided for some embodiments of the present application;

[0027] Figure 5 Structure diagram of transmission assembly provided for some embodiments of the present application;

[0028] Figure 6 Structure diagram of transplanting assembly provided for some embodiments of the present application.

[0029] Reference signs:

[0030] 100-annealing device; 200-conductive substrate; 300-perovskite film layer;

[0031] 10-heating bin; 20-conductive assembly; 30-cooling assembly; 40-transmission assembly; 50-transplanting assembly;

[0032] 11-receiving cavity; 12-exhaust passage; 21-driving part; 22-positive electrode connecting part; 23-negative electrode connecting part; 24-supporting part; 31-cooling support; 41-supporting member;

[0033] 211-second sliding rail; 221-positive electrode probe; 241-first sliding rail; 242-supporting plate; 243-protruding part; 244-temperature sensor;

[0034] X-first direction; Y-second direction; Z-thickness direction. DETAILED DESCRIPTION

[0035] The embodiments of the technical solutions of the present application will be described in detail below with reference to the accompanying drawings. The following embodiments are only used to more clearly illustrate the technical solutions of the present application, and therefore only serve as examples, and cannot limit the protection scope of the present application.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of this application; the use of the terms "including," "comprising," or "having" and variations thereof herein is intended to be broad and encompass the terms "consisting of" and "consisting essentially of" and variations thereof. Unless otherwise required by context, singular terms shall include pluralities and vice versa. Unless otherwise required by context, the use herein of the singular is also to be construed as a use of the plural and vice versa.

[0037] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise explicitly and specifically limited.

[0038] Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearance of the phrase in various places in the specification is not necessarily all referring to the same embodiment, or to a particular embodiment, or to a particular set of embodiments. It will be explicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0039] In the description of the embodiments of the present application, the term "and / or" is only a description of the association relationship of the associated objects, which means that there can be three relationships, for example, A and / or B, which can represent the three cases of A alone, A and B together, and B alone. In addition, the character " / " in this paper generally represents that the front and rear associated objects are a "or" relationship.

[0040] In the description of the embodiments of the present application, the term "multiple" refers to more than two (including two), and similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0041] In the description of the embodiments of the present application, the technical terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. The orientation or positional relationship indicated is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the embodiments of the present application and simplifying the description, and is not intended to indicate or imply that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the embodiments of the present application.

[0042] In the description of the embodiments of the present application, unless otherwise explicitly specified and limited, the technical terms "mount", "connect", "connect", "fix" and other terms should be understood in a broad sense, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium, or can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the embodiments of the present application can be understood according to the specific circumstances.

[0043] In the existing solar cells, perovskite solar cells have been widely concerned due to their high photoelectric conversion efficiency and low cost. In such solar cells, a film layer structure generally includes a transparent substrate, a transparent electrode layer, a hole transport layer, a perovskite layer, an electron transport layer, and a metal electrode layer arranged in layers, wherein the perovskite layer is generally processed by coating a perovskite precursor solution into a film, and then heating and annealing the film layer. In the process of heating and annealing, the uniformity of perovskite grain growth is closely related to the uniformity of the external heating source.

[0044] However, in the aforementioned heating and annealing process step, metal hot tables, ovens, and infrared radiation, microwave heating, etc. are often used, which has low heating efficiency and cannot guarantee good heat dissipation uniformity. In the method of generating alternating magnetic field by alternating current and heating by eddy current, due to the influence of crystallization difference and lattice defects, the conductivity of the perovskite active layer cannot produce uniform eddy current, resulting in poor heating uniformity.

[0045] In view of this, the embodiments of the present application provide a technical solution which generates Joule heat by directly applying an electric signal to the conductive substrate coated with perovskite precursor solution to heat the perovskite layer, which can improve the heating uniformity and efficiency.

[0046] It can be understood that, for the sake of brevity of description, only the use of the device to heat the perovskite active layer is described in the embodiments of the present application, but it should be understood that the present application is not limited thereto, and can also be applied to other occasions requiring higher heating uniformity and is protected.

[0047] Next, the structure of the annealing device and the perovskite battery processing equipment will be described in conjunction with the accompanying drawings. Figure 1 to the accompanying drawings Figure 6 The structure of the annealing device and the perovskite battery processing equipment will be described in conjunction with the accompanying drawings.

[0048] Please refer to Figures 1 to 3 , Figure 1 The structure diagram of the annealing device provided by some embodiments of the present application is shown in the figure, Figure 2 The structure diagram of the conductive assembly provided by some embodiments of the present application is shown in the figure,Figure 3 A partial structural schematic diagram of the conductive assembly provided for some embodiments of the present application.

[0049] In a first aspect, the present application provides an annealing device 100 for heating a perovskite film layer 300 arranged on a conductive substrate 200, the annealing device 100 comprising a heating bin 10 and a conductive assembly 20, the heating bin 10 having a containing cavity 11; the conductive assembly 20 is arranged in the containing cavity 11 and comprises a driving part 21, a positive electrode connecting part 22 and a negative electrode connecting part 23, the positive electrode connecting part 22 and the negative electrode connecting part 23 are respectively arranged in connection with the driving part 21, and the driving part 21 can drive the positive electrode connecting part 22 and the negative electrode connecting part 23 to move in the containing cavity 11 to electrically connect with the conductive substrate 200.

[0050] The embodiments of the present application provide an annealing device 100, which can be used for uniformly heating and annealing a perovskite film layer 300, and the specific method is to arrange the perovskite film layer 300 on a conductive substrate 200, and then connect the conductive substrate 200 into a current path to heat the perovskite film layer 300 by the Joule heat generated in the conductive state.

[0051] Specifically, the annealing device 100 comprises a heating bin 10 for providing containing and supporting functions, and a conductive assembly 20 arranged in the heating bin 10 for applying an electric signal to the conductive substrate 200. The heating bin 10 is internally provided with a containing cavity 11 for containing the conductive assembly 20, the conductive substrate 200 and the perovskite film layer 300 to be heated, and can provide a chamber with good sealing performance to facilitate the adjustment of a specific processing environment.

[0052] Optionally, the heating bin 10 can be made of a material with good heat resistance and heat preservation performance to slow down heat dissipation. Meanwhile, the heating bin 10 can have multiple containing cavities 11, and each containing cavity 11 can be correspondingly provided with a conductive assembly 20; or multiple conductive assemblies 20 can be simultaneously arranged in at least part of the containing cavities 11 of the heating bin 10 and spaced from each other.

[0053] The conductive assembly 20 is used for applying an electric signal to the conductive substrate 200, and the conductive assembly 20 comprises a driving part 21, a positive electrode connecting part 22 and a negative electrode connecting part 23, wherein the positive electrode connecting part 22 and the negative electrode connecting part 23 are respectively used for electrically connecting with the conductive substrate 200 and serving as a positive electrode and a negative electrode, respectively, so that a path is formed in the conductive substrate 200 electrically connected therebetween to generate Joule heat by the resistance of the conductive substrate 200 itself. The positive electrode connecting part 22 and the negative electrode connecting part 23 can be respectively electrically connected to opposite ends of the conductive substrate 200.

[0054] It can be understood that the conductive substrate 200 can be selected as a glass substrate required for manufacturing the perovskite solar cell and a transparent electrode layer, or the conductive substrate 200 can be selected as other conductor layer with an area larger than the perovskite film layer 300.

[0055] In the conductive assembly 20, at least part of the structure of the driving part 21 is movable, driving the positive electrode connecting part 22 and the negative electrode connecting part 23 to move relative to the conductive substrate 200 and the perovskite film layer 300, so as to switch between the state of abutting and electrically connecting with the conductive substrate 200 and the state of being spaced apart from the conductive substrate 200 and electrically disconnected.

[0056] Optionally, when two kinds of connecting parts are provided, one positive electrode connecting part 22 or one negative electrode connecting part 23 can be provided corresponding to each driving part 21; or multiple connecting parts can be provided on the same driving part 21 and can move relative to the driving part 21.

[0057] In the technical scheme of the embodiment of the present application, the annealing device 100 includes a heating bin 10 for accommodating the perovskite film layer 300 and a conductive assembly 20 for applying an electric signal to the conductive substrate 200. By electrically connecting the positive electrode connecting part 22 and the negative electrode connecting part 23 with the conductive substrate 200 respectively, the conductive substrate 200 can be connected to the circuit, and the perovskite film layer 300 can be heated by the Joule heat generated by the conductive substrate 200 after being powered on, so that the perovskite film layer 300 can be uniformly heated and the heating efficiency is high. At the same time, this heating method can be adapted to process the perovskite film layer 300 with a larger area.

[0058] In some optional embodiments, the conductive assembly 20 includes a support part 24 and multiple driving parts 21, and the multiple driving parts 21 are respectively movably connected to the support part 24, and the positive electrode connecting part 22 and the negative electrode connecting part 23 are respectively provided corresponding to the driving part 21.

[0059] The conductive assembly 20 can further include a support part 24, which can be used to support and position the conductive substrate 200, and the driving part 21 is connected to the support part 24 and can move relative to the support part 24 to drive the positive electrode connecting part 22 and the negative electrode connecting part 23 connected thereto to move. When the positive electrode connecting part 22 and the negative electrode connecting part 23 are provided, they can be provided corresponding to the driving part 21 respectively, so that each connecting part can move independently, improving flexibility.

[0060] In some optional embodiments, the plurality of driving portions 21 are arranged opposite to each other in the first direction X, the driving portions 21 have a moving degree of freedom in the second direction Y relative to the supporting portion 24, and the positive electrode connecting portion 22 and the negative electrode connecting portion 23 have a moving degree of freedom in the thickness direction Z of the supporting portion 24 relative to the driving portions 21 to which the positive electrode connecting portion 22 and the negative electrode connecting portion 23 are connected, respectively.

[0061] Optionally, to enable the positive electrode connecting portion 22 and the negative electrode connecting portion 23 to move flexibly relative to the conductive substrate 200, the driving portions 21 can have a moving degree of freedom relative to the supporting portion 24, and the positive electrode connecting portion 22 and the negative electrode connecting portion 23 can have a moving degree of freedom relative to the driving portions 21 to which the positive electrode connecting portion 22 and the negative electrode connecting portion 23 are connected, respectively, so that the positive electrode connecting portion 22 and the negative electrode connecting portion 23 can be moved to abut against the conductive substrate 200 through the two moving relationships.

[0062] Specifically, in the embodiments in which the plurality of driving portions 21 are arranged, the plurality of driving portions 21 can be arranged opposite to each other in the first direction X and located on two sides of the conductive substrate 200 during the operation, so that the positive electrode connecting portion 22 and the negative electrode connecting portion 23 are electrically connected to the opposite end portions of the conductive substrate 200, respectively. The driving portions 21 have a moving degree of freedom in the second direction Y intersecting the first direction X relative to the supporting portion 24, so that the electric connecting portions arranged thereon can move along the edges of the conductive substrate 200, change the specific positions of electrical connection with the conductive substrate 200, and adapt to conductive substrates 200 of different sizes.

[0063] The positive electrode connecting portion 22 and the negative electrode connecting portion 23 have a moving degree of freedom in the thickness direction Z relative to the driving portions 21 to which the positive electrode connecting portion 22 and the negative electrode connecting portion 23 are connected, respectively, so that the two electric connecting portions can be switched between the contact state and the separation state with the conductive substrate 200 through the movement in the thickness direction Z, i.e., the lifting.

[0064] On this basis, after the conductive substrate 200 is placed in the preset position, the positive electrode connecting portion 22 and the negative electrode connecting portion 23 can be moved to the positions suitable for electrical connection with the conductive substrate 200 through the movement of the driving portions 21, and then the positive electrode connecting portion 22 and the negative electrode connecting portion 23 are lowered to abut against the conductive substrate 200 at the end portions, so that the electrical connection is realized.

[0065] Through the foregoing structure, the positive electrode connecting portion 22 and the negative electrode connecting portion 23 can have a moving degree of freedom in the second direction Y and the thickness direction Z relative to the supporting portion 24, so that the moving flexibility of the two connecting portions and the applicability of the annealing device 100 are improved, and the structure is simple and reliable.

[0066] In some optional embodiments, the positive electrode connecting part 22 comprises a plurality of positive electrode probes 221, and the negative electrode connecting part 23 comprises a plurality of negative electrode probes, the positive electrode probes 221 and the negative electrode probes all extend along the thickness direction Z, and at least part of the positive electrode probes 221 and at least part of the negative electrode probes are arranged in sequence along the second direction Y, respectively.

[0067] Optionally, the positive electrode connecting part 22 and the negative electrode connecting part 23 can be electrically connected to the conductive substrate 200 in the structure of multiple probes arranged simultaneously. Taking the positive electrode connecting part 22 as an example, each positive electrode connecting part 22 can be provided with multiple positive electrode probes 221, which can extend in the same direction and in parallel when electrically connected to the conductive substrate 200, and specifically can extend along the thickness direction Z, and the extension sizes can be the same or similar.

[0068] Further, at least part of the positive electrode probes 221 can be arranged in sequence along the second direction Y, and optionally, the multiple positive electrode probes 221 can be arranged in one or more columns, and the adjacent positive electrode probes 221 can be arranged at equal intervals. Arranging the positive electrode probes 221 at intervals along the second direction Y can expand the area size of the electrical connection between the positive electrode connecting part 22 and the conductive substrate 200, so as to further make the Joule heat generated by the conductive substrate 200 more uniform.

[0069] The negative electrode probes in the negative electrode connecting part 23 can have the same structure and arrangement as the positive electrode probes 221 in the positive electrode connecting part 22, and the embodiments of the present application will not be described here.

[0070] By arranging multiple probes in the same connecting part to be electrically connected simultaneously, the possibility of complete disconnection of the overall electrical connection caused by damage to one or several probes can be reduced, and the reliability of the annealing device 100 can be further improved.

[0071] In some optional embodiments, the support part 24 comprises a first sliding rail 241, and the driving part 21 comprises a second sliding rail 211, the first sliding rail 241 is in sliding cooperation with the driving part 21, and the multiple second sliding rails 211 are in sliding cooperation with the positive electrode connecting part 22 and the negative electrode connecting part 23, respectively.

[0072] In the embodiments in which the support part 24 and the driving part 21, and the driving part 21 and the two connecting parts have moving degrees of freedom in different directions, respectively, the two degrees of freedom can be realized by sliding rails.

[0073] Specifically, the support part 24 can be provided with the first sliding rail 241, and the driving part 21 is in sliding cooperation with the support part 24 through the first sliding rail 241. The first sliding rail 241 can have an extension track matching the edge of the conductive substrate 200, so as to facilitate the movement of the driving part 21 along the edge of the conductive substrate 200 and adjust the specific position of the electrical connection with the conductive substrate 200.

[0074] Optionally, the support portion 24 can be provided with a first sliding rail 241 extending along the circumference of the conductive substrate 200 and arranged around the conductive substrate 200, or the support portion 24 can be provided with a plurality of first sliding rails 241 which can be arranged opposite and spaced apart in the first direction X, and can be respectively located on the two opposite sides of the conductive substrate 200 in the first direction X.

[0075] Optionally, the plurality of first sliding rails 241 can be arranged one-to-one with the driving portions 21, or a plurality of driving portions 21 can be arranged on the same first sliding rail 241, or the driving portion 21 can have a relatively long extension size and be slidably connected with two first sliding rails 241 at both ends thereof.

[0076] Similarly, the driving portion 21 can be provided with a second sliding rail 211 which can be arranged one-to-one with the positive electrode connecting portion 22 and the negative electrode connecting portion 23 and be slidably connected therewith, so that the positive electrode connecting portion 22 and the negative electrode connecting portion 23 can move relative to the driving portion 21 in the thickness direction Z through the second sliding rail 211, that is, realize the lifting relative to the conductive substrate 200.

[0077] The relative movement realized by the sliding rail can make the positive electrode connecting portion 22 and the negative electrode connecting portion 23 move smoothly and controllably in two directions, and not easily tilt and collide.

[0078] In some optional embodiments, the conductive assembly 20 includes two driving portions 21, and the positive electrode connecting portion 22 and the negative electrode connecting portion 23 are respectively connected to the two driving portions 21 close to each other.

[0079] Optionally, the conductive assembly 20 can include two driving portions 21 arranged opposite in the first direction X, which can have the same or similar structure, form a symmetrical structure, and be respectively connected to the positive electrode connecting portion 22 and the negative electrode connecting portion 23. The two driving portions 21 opposite to each other have a movement freedom degree in the second direction Y relative to the support portion 24, and the movement trajectories of the two driving portions 21 can be parallel and arranged opposite in the first direction X, so as to correspond the positive electrode connecting portion 22 and the negative electrode connecting portion 23 to the position of the conductive substrate 200.

[0080] Optionally, the positive electrode connecting portion 22 and the negative electrode connecting portion 23 can be arranged at least partially on the side of the two driving portions 21 close to each other, and at this time, the guide rails for moving the driving portions 21 in the second direction Y can be respectively arranged on both sides of the conductive substrate 200 and have a small spacing with the conductive substrate 200, so that the two electric connecting portions arranged on the side of the driving portion 21 close to the conductive substrate 200 can be electrically connected by moving in the thickness direction Z to abut against the conductive substrate 200.

[0081] By arranging the positive electrode connecting portion 22 and the negative electrode connecting portion 23 on the side of the two driving portions 21 close to each other, the space required by the conductive assembly 20 as a whole can be reduced while adapting to the conductive substrate 200, and the two connecting portions with opposite polarities can be respectively electrically connected to the regions close to the end portions on both sides of the conductive substrate 200.

[0082] In some optional embodiments, the support portion 24 includes a support plate 242 and a plurality of protrusions 243 arranged at intervals, the protrusions 243 protrude from the surface of the support plate 242 facing the positive electrode connecting portion 22 and the negative electrode connecting portion 23, and are used to support the conductive substrate 200.

[0083] The support portion 24 in the annealing device 100 is used to support and hold the conductive substrate 200 and the perovskite film layer 300 from below, which can be optionally arranged to include a support plate 242 and protrusions 243 protruding from the surface of the support plate 242 on the side facing the positive electrode connecting portion 22 / negative electrode connecting portion 23, and the protrusions 243 and the support plate 242 can be connected by bonding, welding, pressing, clamping, fastening or integrally formed, etc.

[0084] Optionally, the support portion 24 can include a plurality of protrusions 243 arranged at different positions at intervals on the support plate 242, so that the support of the conductive substrate 200 is stable and reliable. The plurality of protrusions 243 can be of the same or similar shape and size and be made of the same material, and the specific material can be the same as that of the support plate 242 for easy processing and connection. The side end of the protrusion 243 away from the support plate 242 can have a flat surface shape matching the shape of the conductive substrate 200, so that the support is stable.

[0085] Optionally, the plurality of protrusions 243 can be arranged in an array and arranged at equal intervals in the first direction X and the second direction Y to form uniform and stable support. When using the annealing device 100 for heating annealing, the conductive substrate 200 can be placed on the protrusions 243 first, and then the positive electrode connecting portion 22 and the negative electrode connecting portion 23 are moved to abut against and electrically connected to the conductive substrate 200 by the driving portion 21.

[0086] The plurality of protrusions 243 support the conductive substrate 200, reducing the likelihood of heat dissipation at the contact.

[0087] In some optional embodiments, at least part of the protrusions 243 are provided with temperature sensors 244 at the side end away from the support plate 242.

[0088] In the embodiments in which the protrusions 243 are provided and support the conductive substrate 200 through the protrusions 243, at least part of the protrusions 243 can be provided with temperature sensors 244 at the side close to the conductive substrate 200, and specifically, the temperature sensors 244 can be provided at the side end of the protrusions 243 away from the support plate 242, and the protrusions 243 can be in abutment with the conductive substrate 200 through the temperature sensors 244, so that the temperature monitoring is more accurate.

[0089] Optionally, in the embodiments in which the plurality of protrusions 243 are provided, each of the protrusions 243 can be provided with a temperature sensor 244 to obtain the temperature at different positions on the conductive substrate 200, so as to make targeted adjustments according to the real-time temperature, further improving the likelihood of uniform heating of the perovskite film layer 300. Meanwhile, the temperature sensors 244 can be communicatively connected to the same controller, so as to be viewed or adjusted by the staff uniformly.

[0090] By providing the temperature sensors 244 at the top end of the protrusions 243, the temperature at each position on the conductive substrate 200 can be monitored in real time and accurately, improving the accuracy of temperature control, and thus enabling the perovskite film layer 300 to be heated uniformly.

[0091] In some optional embodiments, the melting point of the protrusions 243 is greater than or equal to 200℃.

[0092] Optionally, the protrusions 243 in the support portion 24 are used to support the two layer structures from the side of the conductive substrate 200 away from the perovskite film layer 300, that is, the protrusions 243 can be in abutment with the conductive substrate 200 which generates heat. Therefore, to enable the protrusions 243 to provide reliable support, the melting point of the protrusions 243 can be greater than or equal to 200℃.

[0093] Since the highest temperature required for annealing of the perovskite film is usually not more than 200℃, for example, it can be around 160℃, by setting the protrusions 243 directly made into the conductive substrate 200 to have a melting point higher than 200℃, the likelihood of melting or softening deformation of the protrusions 243 during annealing can be reduced, and thus the likelihood of tilting of the conductive substrate 200 can be reduced, and the reliability of the annealing device 100 can be improved.

[0094] In some optional embodiments, each positive electrode connecting part 22 and each negative electrode connecting part 23 further comprises a voltage sensor, and the annealing device 100 further comprises a controller, and the plurality of voltage sensors are in communication connection with the controller.

[0095] Similarly to the temperature monitoring, each positive electrode connecting part 22 and each negative electrode connecting part 23 can be provided with a voltage sensor for detecting the real-time voltage, and the voltage sensor can accurately know the intensity of the electric signal applied to the conductive substrate 200 at the moment, and the real-time heat generation of the conductive substrate 200 can be calculated by the resistance and other parameters of the conductive substrate 200, so that the annealing temperature of the perovskite film layer 300 can be accurately controlled.

[0096] Optionally, the annealing device 100 can comprise a controller arranged on the outer peripheral surface of the heating bin 10 and outside the accommodating cavity 11, and the controller is in communication connection with each voltage sensor, that is, the two can be directly connected through a signal line, or the two can realize communication through a signal sending module and a signal receiving module. In the embodiment in which the protruding part 243 of the annealing device 100 is provided with the temperature sensor 244, each temperature sensor 244 can be optionally in communication connection with the controller to realize centralized control.

[0097] By arranging the voltage sensor, the size of the electric current applied to the conductive substrate 200 can be monitored in real time, thereby improving the accuracy of temperature control and further providing product yield.

[0098] In some optional embodiments, the heating bin 10 further comprises a heat preservation layer, and the heat preservation layer is connected to the cavity wall of the accommodating cavity 11.

[0099] In order to well maintain the temperature inside the accommodating cavity 11, the heating bin 10 can further comprise a heat preservation layer, and the heat preservation layer can be arranged in the accommodating cavity 11 and connected to the cavity wall of the accommodating cavity 11. The heat preservation layer and the cavity wall of the accommodating cavity 11 can be connected by bonding, clamping, crimping or fastening, etc. The heat preservation layer can be arranged to cover the cavity wall of the accommodating cavity 11 to further improve the heat preservation effect.

[0100] Optionally, the heat preservation layer can have certain heat resistance and good function of blocking heat loss to the outside, for example, can be made of quartz and the like. At the same time, the heating bin 10 can be made of the same material with good heat preservation performance as a whole to provide double-layer heat preservation effect, further reduce the heat dissipation efficiency of the heating bin 10 to the outside, improve the heating uniformity in the perovskite annealing process, and reduce the required heating power.

[0101] In some optional embodiments, the heating bin 10 comprises a plurality of exhaust channels 12, and the exhaust channels 12 are communicated between the cavity wall of the accommodating cavity 11 and the outer peripheral surface of the heating bin 10.

[0102] As mentioned above, the heating chamber 10 can be sealed to facilitate annealing of the perovskite film layer 300 under suitable environmental conditions. On this basis, the heating chamber 10 can be further provided with a plurality of exhaust channels 12, which are in communication between the inside and outside of the heating chamber 10 and can be switched between an open state and a sealed state.

[0103] The exhaust channel 12 can be used to exchange gas between the inside and outside of the containing cavity 11. For example, the containing cavity 11 can be filled with a protective gas through the exhaust channel 12, or the internal temperature can be adjusted by filling the containing cavity 11 with a gas at a preset temperature, or the solvent evaporated inside the containing cavity 11 can be extracted through the exhaust channel 12, etc. The present application does not make specific limitations in this regard.

[0104] The exhaust channel 12 can be arranged near the top of the heating chamber 10 to facilitate gas exchange and reduce disturbance to the perovskite film layer 300 below. By arranging the exhaust channel 12, the processing yield of the annealing device 100 can be further improved.

[0105] Please refer to Figure 4 , Figure 4 The structure of the cooling assembly provided by some embodiments of the present application is shown in the schematic diagram. In some optional embodiments, the annealing device 100 further comprises a cooling assembly 30 arranged on one side of the heating chamber 10, and the cooling assembly 30 comprises a plurality of cooling supports 31 arranged in the thickness direction Z of the cooling supports 31.

[0106] Corresponding to the function of the heating chamber 10, the annealing device 100 can further comprise a cooling assembly 30 for cooling the conductive substrate 200 and the perovskite film layer 300 removed from the heating chamber 10 and having a relatively high temperature. Natural cooling or air cooling can be used to cool it to below a preset temperature threshold or directly to room temperature.

[0107] Similar to the heating chamber 10 which can have a plurality of containing cavities 11, the cooling assembly 30 can be used to cool a plurality of perovskite film layers 300 at the same time. Specifically, the cooling assembly 30 can comprise a plurality of cooling supports 31 for supporting the conductive substrate 200, and these cooling supports 31 can have the same or similar properties and sizes, and their shapes and sizes can be matched with the shapes and sizes of the perovskite film and the conductive substrate 200.

[0108] By arranging the cooling assembly 30, the perovskite film layer 300 after annealing can be cooled to room temperature or other preset temperature to facilitate the next process.

[0109] Please refer to Figure 5 , Figure 5The structure diagram of the transfer assembly provided in some embodiments of the present application is shown. In some optional embodiments, the annealing device 100 further comprises two transfer assemblies 40, which are respectively arranged upstream of the heating bin 10 and downstream of the cooling assembly 30. The transfer assembly 40 comprises a support 41. The melting point of the support 41 in the transfer assembly 40 arranged downstream of the cooling assembly 30 is higher than that of the support 41 in the transfer assembly 40 arranged upstream of the heating bin 10.

[0110] Optionally, the annealing device 100 can further comprise two or more transfer assemblies 40. Taking the case of comprising two transfer assemblies 40 as an example, the two transfer assemblies 40 can be respectively arranged upstream of the heating bin 10 and downstream of the cooling assembly 30, and are respectively used for feeding and discharging, i.e., respectively used for transporting the perovskite film layer 300 to be heated and annealed to the vicinity of the heating bin 10, and for transporting the cooled perovskite film layer 300 to the next process.

[0111] Optionally, the two transfer assemblies 40 can have the same or similar structure, for example, driving the conductive substrate 200 and the perovskite film layer 300 to move through magnetic wheels and transmission wheels, and stopping them at a preset position through a stop mechanism such as a limiting block. At the preset position, the transfer assembly 40 can be correspondingly provided with a support 41 for supporting the conductive substrate 200, so as to facilitate the movement of the conductive substrate 200 to the next step.

[0112] Optionally, in the embodiments in which the upstream and downstream transfer assemblies 40 are both provided with supports 41, the two groups of supports 41 can have different heat resistance. The heat resistance requirement of the support 41 in the transfer assembly 40 arranged upstream of the heating bin 10 is relatively low. The support 41 can be optionally provided with a relatively low melting point to save costs and facilitate processing. In the transfer assembly 40 arranged downstream of the cooling assembly 30, the support 41 can have a relatively high melting point to improve reliability and reduce the possibility of deformation of the support 41 due to insufficient cooling of the conductive substrate 200 and / or the perovskite film layer 300, thereby reducing the possibility of collision and damage of the conductive substrate 200 and / or the perovskite film layer 300.

[0113] By making the transfer assembly 40 arranged downstream have a relatively high melting point, the conductive substrate 200 with a relatively high temperature after annealing can be conveniently supported.

[0114] Please refer to Figure 6 , Figure 6 The structure diagram of the transplanting assembly provided in some embodiments of the present application is shown. In some optional embodiments, the annealing device 100 further comprises a transplanting assembly 50 for moving the conductive substrate 200 and the perovskite film layer 300, and the transplanting assembly 50 is capable of moving in the arrangement direction of the heating bin 10 and the cooling assembly 30.

[0115] In order to facilitate automation and improve the moving efficiency of the conductive substrate 200 and the perovskite film layer 300, the annealing device 100 can further comprise a transplanting assembly 50. The arrangement direction of the transplanting assembly 50 and the heating bin 10 should intersect with the arrangement direction of the heating bin 10 and the cooling assembly 30, and the transplanting assembly 50 should be movable along the arrangement direction of the heating bin 10 and the cooling assembly 30, so as to realize the functions of placing the perovskite film layer 300 into the heating bin 10, placing the perovskite film layer 300 after annealing into the cooling assembly 30, and the like.

[0116] Optionally, in the embodiment provided with the aforementioned two transport assemblies 40, the transplanting assembly 50 can also be used to realize the transportation of the transport assembly 40 to the heating bin 10 and the transportation of the cooling assembly 30 to the transport assembly 40.

[0117] Optionally, the transplanting assembly 50 can comprise a mechanical arm and a plurality of supporting rods, which can extend parallel to each other and be arranged at intervals to form a structure similar to a fence or a grid, for stretching into the conductive substrate 200 below and lifting the conductive substrate 200 and the perovskite film layer 300 together, so as to facilitate the transfer while reducing the possibility of collision damage to the perovskite film layer 300.

[0118] By arranging the transplanting assembly 50, the perovskite film layer 300 can be conveniently and accurately moved between the modules, further improving the processing efficiency and facilitating automation.

[0119] In a second aspect, the present application provides a perovskite battery processing equipment, which comprises a film coating mechanism, a drying mechanism, and the annealing device 100 of any one of the embodiments of the first aspect. The film coating mechanism is used to form a perovskite film layer 300 substrate on a conductive substrate 200. The drying mechanism is arranged downstream of the film coating mechanism and is used to dry the perovskite film layer 300 substrate to obtain the perovskite film layer 300. The annealing device 100 is arranged downstream of the drying mechanism.

[0120] The embodiments of the present application also provide a perovskite battery processing equipment comprising the aforementioned annealing device 100. The processing equipment can further comprise a film coating mechanism for forming a perovskite film layer 300 substrate on a conductive substrate 200 and a drying mechanism for drying the substrate.

[0121] Specifically, the coating mechanism can be selected to be capable of coating the perovskite precursor solution on the conductive substrate 200 by coating, spraying, scraping, etc., to form a wet film, which is the perovskite film layer 300 substrate. The drying mechanism can be selected to be capable of drying the aforementioned wet film by air knife or vacuum flash, etc., so that most of the solvent in the wet film is removed, and then a perovskite semi-dry film, i.e., the perovskite film layer 300, is formed. The annealing device 100 is used to heat and anneal the perovskite film layer 300, promote solvent quenching in the perovskite film layer 300, and finally quickly and uniformly form perovskite crystals.

[0122] The perovskite battery processing equipment in the embodiments of the present application has all the beneficial effects of the annealing device 100 in the first aspect, and specific reference can be made to the specific description of the annealing device 100 in the above embodiments. The present embodiment will not be repeated here.

[0123] The present embodiment provides an annealing device 100 for heating a perovskite film layer 300 disposed on a conductive substrate 200. The annealing device 100 includes a heating bin 10 and a conductive assembly 20. The heating bin 10 has a containing cavity 11. The conductive assembly 20 is disposed in the containing cavity 11 and includes a driving part 21, a positive electrode connecting part 22, and a negative electrode connecting part 23. The positive electrode connecting part 22 and the negative electrode connecting part 23 are respectively connected with the driving part 21. The driving part 21 can drive the positive electrode connecting part 22 and the negative electrode connecting part 23 to move in the containing cavity 11 to electrically connect with the conductive substrate 200.

[0124] Among them, a plurality of driving parts 21 are relatively arranged in a first direction X. The driving part 21 has a movement degree of freedom in a second direction Y relative to the support part 24. The positive electrode connecting part 22 and the negative electrode connecting part 23 have a movement degree of freedom in a thickness direction Z of the support part 24 relative to the driving part 21. The first direction X, the second direction Y, and the thickness direction Z are arranged to intersect with each other. The support part 24 includes a support plate 242 and a plurality of convex parts 243 arranged at intervals. The convex part 243 protrudes from the surface of the support plate 242 facing the positive electrode connecting part 22 and the negative electrode connecting part 23. At least part of the convex part 243 is provided with a temperature sensor 244 on the side end away from the support plate 242.

[0125] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than limit them. Although the present application has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that the technical solutions recorded in the foregoing embodiments can be modified, or some or all of the technical features can be replaced equivalently. Such modifications or replacements do not change the essence of the corresponding technical solutions, which should be covered in the scope of the claims and the specification of the present application. In particular, the technical features mentioned in each embodiment can be combined in any manner as long as there is no structural conflict. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. An annealing apparatus characterized by comprising: The application discloses an annealing device for heating a perovskite film layer arranged on a conductive substrate. The heating bin has a containing cavity. The conductive assembly is arranged in the containing cavity and comprises a driving part, a positive electrode connecting part and a negative electrode connecting part.

2. The annealing apparatus according to claim 1, wherein The conductive assembly comprises a supporting part and a plurality of driving parts.

3. The annealing apparatus according to claim 2, wherein The driving parts are arranged in a first direction and have a moving freedom in a second direction relative to the supporting part.

4. The annealing apparatus according to claim 3, wherein The positive electrode connecting part comprises a plurality of positive electrode probes, and the negative electrode connecting part comprises a plurality of negative electrode probes.

5. The annealing apparatus according to claim 3, wherein The supporting part comprises a first sliding rail, and the driving part comprises a second sliding rail.

6. The annealing apparatus of claim 2, wherein The supporting part comprises a supporting plate and a plurality of convex parts arranged at intervals.

7. The annealing apparatus of claim 2, wherein At least part of the convex parts are provided with temperature sensors on one side end away from the supporting plate.

8. The annealing apparatus according to claim 7, wherein The melting point of the convex part is greater than or equal to 200 DEG C.

9. The annealing apparatus of claim 7, wherein Each of the positive electrode connecting part and the negative electrode connecting part further comprises a voltage sensor.

10. The annealing apparatus of claim 1, wherein The heating bin further comprises a heat preservation layer arranged on the cavity wall of the containing cavity.

11. The annealing apparatus of claim 1, wherein The heating bin comprises a plurality of exhaust channels.

12. The annealing apparatus of claim 1, wherein The annealing device further comprises a cooling assembly arranged on one side of the heating bin.

13. The annealing apparatus of claim 1, wherein The cooling assembly comprises a plurality of cooling supports arranged at intervals in the thickness direction.

14. The annealing apparatus of claim 13, wherein The annealing device further comprises two transmission assemblies arranged upstream of the heating bin and downstream of the cooling assembly. The transmission assembly comprises a supporting part. The melting point of the supporting part in the transmission assembly arranged downstream of the cooling assembly is higher than that of the supporting part in the transmission assembly arranged upstream of the heating bin.

15. The annealing apparatus of claim 13, wherein The annealing device further comprises a transplanting assembly for moving the conductive substrate and the perovskite film layer, and the transplanting assembly is capable of moving in the arrangement direction of the heating bin and the cooling assembly.

16. A perovskite cell processing apparatus, characterized by, Comprise: A film coating mechanism for forming a perovskite film layer matrix on a conductive substrate; A drying mechanism arranged downstream of the film coating mechanism for drying the perovskite film layer matrix to obtain a perovskite film layer; The annealing device according to any one of claims 1-15, arranged downstream of the drying mechanism.

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