Gas purification treatment equipment for chip dry etching process

Abstract

The utility model relates to gas purification treatment equipment for a chip dry etching process, and belongs to the technical field of gas purification, the gas purification treatment equipment comprises a cracking cylinder and a pre-adsorption device, a heating piece and a placement piece are arranged in the cracking cylinder, the heating piece is used for heating gas introduced into the cracking cylinder, the placement piece is used for placing a cracking catalyst, and the pre-adsorption device is used for adsorbing the cracking catalyst. The pre-adsorption device comprises a pre-adsorption cylinder, an adsorption medium is arranged in the pre-adsorption cylinder, a gas inlet header pipe and a connecting pipe are arranged on the pre-adsorption cylinder, gas to be purified enters the pre-adsorption cylinder through the gas inlet header pipe, one end, far away from the pre-adsorption cylinder, of the connecting pipe is connected with the cracking cylinder, a gas outlet pipe is arranged on the cracking cylinder, and the purified gas is discharged out of the equipment through the gas outlet pipe. The pre-adsorption device can perform waste gas treatment at normal temperature, normal-temperature adsorption energy consumption is low, an adsorption medium is low in price, and after pretreatment, a small amount of residual waste gas is decomposed by the high-temperature cracking device, so that the waste gas treatment effect is ensured, and the waste gas treatment cost can be reduced.

Description

TECHNICAL FIELD

[0001] The application relates to the technical field of gas purification, in particular to a gas purification treatment equipment for chip dry etching process. BACKGROUND

[0002] In a chip manufacturing process, an etching process is generally used to selectively remove unnecessary materials, and chip etching processes are divided into dry etching and wet etching. Dry etching technology has the advantages of good anisotropy and high etching rate, and therefore has a wider application range than wet etching. Dry etching refers to an etching technology in which gas is used as the main medium, and the gas is etched in a plasma state under certain conditions. The process is physical bombardment reaction or chemical reaction. In the plasma etching process, the gas and the chip material will react chemically, and gases such as SiF4 will be generated. When the gas is discharged, it will easily pollute the environment, and therefore needs to be treated before being discharged.

[0003] At present, plasma purification equipment and high-temperature cracking adsorption equipment are mainly used to purify waste gas. The plasma purification equipment is relatively expensive, and when used for daily waste gas treatment, it cannot completely convert harmful gases into harmless gases, has many by-products, and is prone to generate a large amount of ozone, and has low removal efficiency. When using high-temperature cracking equipment for daily treatment, a large amount of high-temperature cracking catalyst needs to be used in the treatment process, which is expensive and consumes quickly. A large amount of electric energy is needed for high-temperature heating to treat waste gas, which has high energy consumption, thereby increasing the cost of waste gas treatment. Therefore, the problem needs to be solved. CONTENT OF THE INVENTION

[0004] In order to improve the above problems, the application provides a gas purification treatment equipment for chip dry etching process.

[0005] The gas purification treatment equipment for chip dry etching process provided by the application adopts the following technical scheme:

[0006] A gas purification treatment equipment for chip dry etching process, comprising a cracking cylinder and a pre-adsorption device, a heating element and a placing element are arranged in the cracking cylinder, the heating element is used for heating the gas entering the cracking cylinder, and the placing element is used for placing a cracking catalyst, the pre-adsorption device comprises a pre-adsorption cylinder, an adsorption medium is arranged in the pre-adsorption cylinder, an air inlet main pipe and a connecting pipe are arranged on the pre-adsorption cylinder, the gas to be purified enters the pre-adsorption cylinder through the air inlet main pipe, the connecting pipe is connected with the cracking cylinder at an end away from the pre-adsorption cylinder, an air outlet pipe is arranged on the cracking cylinder, and the purified gas is discharged from the equipment through the air outlet pipe.

[0007] By adopting the above technical scheme, the pre-adsorption device can perform waste gas treatment at normal temperature, normal temperature adsorption has low energy consumption, and the adsorption medium is cheap, after pretreatment, a small amount of waste gas is decomposed by the high-temperature cracking device, which not only ensures the waste gas treatment effect, but also reduces the waste gas treatment cost.

[0008] Preferably, the pre-adsorption device further comprises an adsorption plate, a cooperating block is arranged on the inner wall of the pre-adsorption cylinder, a through groove is arranged on the cooperating block in the height direction of the pre-adsorption cylinder, an insertion block is arranged on the adsorption plate, the insertion block is inserted into the through groove, a plurality of air holes are arranged on the adsorption plate, and the adsorption medium is placed on the adsorption plate.

[0009] By adopting the above technical scheme, the adsorption medium is placed on the adsorption plate, and after the gas enters the pre-adsorption device, the adsorption treatment of the normal temperature adsorption medium is performed, and the cooperation of the insertion block and the through groove facilitates the disassembly of the adsorption plate and the pre-adsorption cylinder.

[0010] Preferably, a locking groove is further arranged on the cooperating block, the locking groove is communicated with the through groove, the adsorption plate is rotated after the insertion block is inserted into the through groove, and the insertion block is inserted into the locking groove.

[0011] By adopting the above technical scheme, when the adsorption plate is installed, the insertion block cooperates with the through groove, and then the adsorption plate is rotated to drive the insertion block to be inserted into the locking groove, the position of the adsorption plate is further limited, and the stability of the equipment operation is ensured.

[0012] Preferably, a first gas inlet pipe is connected to the gas inlet manifold, a second gas inlet pipe is connected to the connecting pipe, and control valves are arranged on the first gas inlet pipe and the second gas inlet pipe.

[0013] By adopting the above technical scheme, before the waste gas enters the pre-adsorption device, the protective gas is introduced through the first gas inlet pipe to dilute and cool the waste gas, so as to reduce the oxygen content, the concentration of flammable and explosive gas, and the temperature of the waste gas in the pretreatment device, after the high-temperature cracking treatment of the waste gas is completed, the high-temperature cracking device is in a high-temperature state, and when normal temperature is used for cooling, the cooling time is long, the nitrogen gas enters through the second gas inlet pipe to help cool the high-temperature cracking device, so as to shorten the time of the high-temperature cracking device.

[0014] Preferably, the device further comprises a condensing device, the condensing device is communicated with the gas outlet pipe, and the gas is discharged out of the equipment after being purified and cooled by the condensing device.

[0015] By adopting the above technical scheme, the gas after purification is discharged out of the equipment after being cooled by the condensing device, so as to ensure the cleanliness and safety of the environment.

[0016] Preferably, the cracking cylinder comprises an outer cylinder and an inner cylinder, the inner cylinder is installed in the outer cylinder, the placing piece is arranged at the top end of the inner cylinder, a plurality of peak-shaped holes are arranged on the lower surface of the placing piece, the side wall of the placing piece is clamped to the inner side wall of the outer cylinder, the gas outlet pipe penetrates through the outer cylinder and is inserted into the placing piece, the heating piece is inserted into the inner cylinder, an air inlet is arranged on the end of the heating piece protruding out of the inner cylinder, and the connecting pipe penetrates through the outer cylinder and communicates with the air inlet.

[0017] By adopting the above technical scheme, the waste gas enters the cracking cylinder through the connecting pipe, the gas enters the outer cylinder and is first subjected to high-temperature decomposition in the outer cylinder, the decomposed gas overflows into the inner cylinder and is absorbed by the adsorbent in the placing piece, and the remaining harmless gas is discharged through the gas outlet pipe. The cracking cylinder can treat the gas.

[0018] Preferably, the heating piece comprises a connecting end and a plurality of heating pipes, the plurality of heating pipes are installed on the end wall of the connecting end, an embedding hole is arranged at the center of the placing piece, the plurality of heating pipes are inserted into the embedding hole, and the connecting end is clamped to the outer wall of the embedding hole.

[0019] By adopting the above technical scheme, the connecting end abuts against the upper end of the placing groove, and the heating pipe is inserted into the embedding hole. When it is necessary to disassemble, the connecting end can be directly pulled out, so that the heating piece can be quickly disassembled.

[0020] Preferably, the auxiliary adsorption device comprises an auxiliary air inlet pipe, an auxiliary adsorber and an auxiliary pipe, the auxiliary air inlet pipe and the auxiliary pipe are connected to the auxiliary adsorber, the auxiliary air inlet pipe communicates with the air inlet main pipe, and the auxiliary pipe communicates with the condensing device.

[0021] By adopting the above technical scheme, if the pre-adsorption device fails, the auxiliary adsorption device can be connected to move the gas to be purified through the auxiliary adsorption device and remove it through the condensing device, without stopping the equipment, so that the pre-adsorption device can be quickly repaired.

[0022] In summary, the present application has at least one of the following beneficial technical effects:

[0023] 1. The combination of the pre-adsorption device and the cracking cylinder can ensure the waste gas treatment effect and reduce the waste gas treatment cost;

[0024] 2. The adsorption plate arranged in the pre-adsorption device makes the replacement of the adsorption medium more convenient, the adsorption plate can be replaced or cleaned regularly, the adsorption effect of the adsorption medium is guaranteed, and the gas purification effect is further improved;

[0025] 3. By the arrangement of the first and second gas inlet pipes, it is convenient to synchronously introduce protective gas during the gas purification process, to reduce the oxygen content, the concentration of flammable and explosive gas and the temperature of waste gas in the pre-adsorption device, and to improve the safety of the waste gas treatment process. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 is the overall structure schematic diagram of the purification treatment equipment in the embodiment of the present application.

[0027] Figure 2 is the structure schematic diagram of the pre-adsorption device in the embodiment of the present application.

[0028] Figure 3 is the structure schematic diagram of the cracking cylinder in the embodiment of the present application.

[0029] Explanation of reference signs: 1, pre-adsorption device; 11, pre-adsorption cylinder; 111, gas inlet main pipe; 112, connecting pipe; 12, adsorption plate; 121, plug-in block; 13, matching block; 14, through groove; 15, locking groove; 17, air hole; 2, cracking cylinder; 21, outer cylinder; 211, cylinder body; 212, cylinder cover; 22, inner cylinder; 23, gas outlet pipe; 3, heating element; 31, connecting end; 32, heating pipe; 4, limiting ring; 5, condensing device; 6, auxiliary adsorption device; 61, auxiliary gas inlet pipe; 62, auxiliary adsorber; 63, auxiliary pipe; 7, first gas inlet pipe; 8, second gas inlet pipe; 9, placing element. DETAILED DESCRIPTION

[0030] In order to make the purpose, features and advantages of the present application more obvious and easy to understand, the technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.

[0031] The drawings will be described below in conjunction with the Figures 1-3 The present application will be further described in detail.

[0032] The embodiment of the present application discloses a kind of gas purification treatment equipment for chip dry etching process, refer to Figure 1, including cracking cylinder 2 and pre-adsorption device 1, pre-adsorption device 1 includes pre-adsorption cylinder 11, pre-adsorption cylinder 11 is provided with adsorption medium, such as activated carbon fiber, zeolite molecular sieve, macroporous resin and other materials. Pre-adsorption cylinder 11 is connected with gas inlet manifold 111 and connecting pipe 112, the gas to be purified enters pre-adsorption cylinder 11 through gas inlet manifold 111, the end of connecting pipe 112 away from pre-adsorption cylinder 11 is connected with cracking cylinder 2, cracking cylinder 2 is provided with gas outlet pipe 23, and the purified gas is discharged from the equipment through gas outlet pipe 23.

[0033] Referring to Figure 1 And 2 , pre-adsorption device 1 further includes adsorption plate 12, a ring of pre-adsorption cylinder 11 is fixedly connected with cooperating block 13, cooperating block 13 is provided with through groove 14 in the height direction of pre-adsorption cylinder 11. The adsorption plate 12 is fixedly connected with the plug-in block 121, and the plug-in block 121 is inserted into the through groove 14. The cooperating block 13 is also provided with a locking groove 15, which is communicated with the through groove 14, and the plug-in block 121 is inserted into the through groove 14. After rotating the adsorption plate 12, the plug-in block 121 extends into the locking groove 15. The adsorption plate 12 is provided with a plurality of air holes 17, and the adsorption medium is placed on the adsorption plate 12.

[0034] When the adsorption plate 12 is installed, the plug-in block 121 cooperates with the through groove 14, and then the adsorption plate 12 is rotated to drive the plug-in block 121 to be inserted into the locking groove 15, so that the position of the adsorption plate 12 is further limited, and the stability of the equipment operation is guaranteed. At the same time, the adsorption medium is placed on the adsorption plate 12, and the gas enters the pre-adsorption device 1 and is subjected to adsorption treatment of the normal temperature adsorption medium. According to actual processing requirements, the adsorption plate 12 can be provided with multiple layers.

[0035] Referring to Figure 1 , cracking cylinder 2 includes outer cylinder 21 and inner cylinder 22, outer cylinder 21 includes cylinder body 211 and cylinder cover 212, cylinder cover 212 is connected above cylinder body 211 by bolts, inner cylinder 22 is placed in outer cylinder 21, cylinder body 211 is provided with a stepped block inside, the diameter of the top end of inner cylinder 22 is greater than the diameter of the cylinder body of inner cylinder 22 and the diameter of the stepped block, and inner cylinder 22 is clamped on the stepped block.

[0036] Referring to Figure 1, the cracking cylinder 2 further comprises a heating element 3 and a placing element 9, the placing element 9 is arranged on the upper end of the inner cylinder 22, and the placing element 9 is used for placing adsorption medium available at high temperature, such as lithium orthosilicate (Li4SiO4), lithium zirconate (Li2ZrO3) and the like. A embedding hole for inserting the heating element 3 is arranged at the center of the upper end wall of the inner cylinder 22, and the embedding hole is communicated with the inside of the inner cylinder 22. In the embodiment, the bottom end of the inner cylinder 22 is a through hole, and the through hole is communicated with the outer cylinder 21. A honeycomb hole for gas entering is arranged at the bottom of the placing element 9. The heating element 3 is arranged at the top end of the inner cylinder 22, and a controller (not shown in the figure) is arranged outside the cracking cylinder 2, the heating element 3 is electrically connected with the controller, and the controller is used for controlling the opening and closing of the heating element 3.

[0037] With reference to Figure 1 and 3 , the heating element 3 comprises a connecting end 31 and a plurality of heating pipes 32 connected to the end wall of one end of the connecting end 31, and a gas inlet is arranged at the center of the connecting end 31 for inserting a connecting pipe 112, and the gas inlet is communicated with the inside of the inner cylinder 22. The heating element 3 is inserted into the inner cylinder 22, and a gas inlet is arranged at one end of the heating element 3 extending out of the inner cylinder 22, and the connecting pipe 112 passes through the outer cylinder 21 and is communicated with the gas inlet. The connecting end 31 abuts against the upper end of the placing groove, and the heating pipe 32 is inserted into the embedding hole, and when it is needed to be removed, the connecting end 31 can be directly pulled out, so that the heating element 3 can be quickly disassembled.

[0038] With reference to Figure 1 , a plurality of limiting rings 4 for stabilizing the heating pipe 32 are sleeved on the heating pipe 32. The heating pipe 32 is provided in three, and the limiting ring 4 is provided in six. The heating pipe 32 is connected to the end wall of the connecting end 31 by a bolt. One end of the connecting end 31 away from the heating pipe 32 has a tab, the heating pipe 32 and the connecting end 31 are inserted into the embedding hole, and the tab abuts against the outer wall of the embedding hole.

[0039] With reference to Figure 1 and 3 , the gas purification treatment equipment further comprises a condensing device 5, the condensing device 5 is communicated with the gas outlet pipe 23, after the gas is purified by high-temperature decomposition of the cracking cylinder 2, the gas moves to the condensing device 5 through the gas outlet pipe 23, the gas is cooled and discharged, so that the environment is clean and safe.

[0040] With reference to Figure 1 , the first gas inlet pipe 7 is connected to the gas inlet main pipe 111, the second gas inlet pipe 8 is connected to the connecting pipe 112, and the control valve is arranged on the first gas inlet pipe 7 and the second gas inlet pipe 8.

[0041] Before the waste gas enters the pre-adsorption device 1, the protective gas such as nitrogen is introduced through the first gas inlet pipe 7 to dilute and cool the waste gas, so as to reduce the oxygen content, the concentration of flammable and explosive gas and the temperature of the waste gas in the pre-treatment device. After the waste gas is treated by high-temperature cracking, the cracking cylinder 2 is in a high-temperature state, and the cooling time is relatively long when the cracking cylinder 2 is cooled at room temperature. The nitrogen is introduced through the second gas inlet pipe 8 to help cool the cracking cylinder 2, so as to shorten the cooling time of the cracking cylinder 2. The operator can control the total amount of nitrogen introduced through the control valve, and the use is more flexible and convenient.

[0042] With reference to Figure 1 and 3 , the auxiliary adsorption device 6 is arranged, the auxiliary adsorption device 6 comprises an auxiliary gas inlet pipe 61, an auxiliary adsorber 62 and an auxiliary pipe 63, the auxiliary gas inlet pipe 61 and the auxiliary pipe 63 are both connected to the auxiliary adsorber 62, the auxiliary gas inlet pipe 61 is in communication with the gas inlet main pipe 111, and the auxiliary pipe 63 is in communication with the gas cooling device. If the pre-adsorption device 1 fails, the auxiliary adsorption device 6 can be connected, the auxiliary adsorption device 6 is internally provided with adsorption medium, the gas to be purified is moved through the auxiliary adsorption device 6 and removed through the condensing device 5, and the mixed waste gas can also re-enter the equipment for treatment, so that the pre-adsorption device 1 can be quickly repaired without stopping the equipment.

[0043] When the pre-adsorption device 1 fails, the bypass gas inlet pipe is connected to the gas inlet main pipe 111, the gas inlet of the auxiliary adsorption device 6 is in communication with the bypass gas inlet pipe, the gas outlet of the auxiliary adsorption device 6 is in communication with the gas cooling device through a pipeline, and the waste gas cooled through the gas cooling device can be directly discharged from the pipeline.

[0044] The implementation principle of the gas purification treatment equipment for the chip dry etching process according to the embodiment of the present application is as follows:

[0045] The waste gas enters through the gas inlet main pipe 111, when the concentration or temperature of the waste gas is relatively high, the first gas inlet pipe 7 is opened, the nitrogen mixes with the waste gas and enters the pre-adsorption device 1, and the harmful gas in the waste gas is pre-adsorbed through the adsorption medium in the pre-adsorption device 1; the gas treated through the pre-adsorption device 1 enters the cracking cylinder 2 through the connecting pipe 112, the heating element 3 in the cylinder is powered to heat, the gas is heated and decomposed and purified, the gas after heating reacts with the high-temperature cracking catalyst to realize the final treatment of the waste gas. The treated waste gas is cooled through the gas cooling device and then discharged. When the treatment of the waste gas is stopped, the nitrogen is introduced through the second gas inlet pipe 8 to assist in cooling the cracking cylinder 2.

[0046] The above are preferred embodiments of the present application, and do not limit the protection scope of the present application, so that: any equivalent changes made according to the structure, shape and principle of the present application should be covered within the protection scope of the present application.

Claims

1. A gas purification and treatment device for chip dry etching process, characterized in that: The application relates to a cracking device, which comprises a cracking cylinder (2) and a pre-adsorption device (1), the cracking cylinder (2) is internally provided with a heating element (3) and a placing element (9), the heating element (3) is used for heating the gas entering the cracking cylinder (2), the placing element (9) is used for placing a cracking catalyst, the pre-adsorption device (1) comprises a pre-adsorption cylinder (11), the pre-adsorption cylinder (11) is internally provided with an adsorption medium, the pre-adsorption cylinder (11) is provided with an air inlet manifold (111) and a connecting pipe (112), the to-be-purified gas enters the pre-adsorption cylinder (11) through the air inlet manifold (111), one end of the connecting pipe (112) away from the pre-adsorption cylinder (11) is connected with the cracking cylinder (2), and the cracking cylinder (2) is provided with an air outlet pipe (23), the purified gas is discharged from the equipment through the air outlet pipe (23).

2. The gas purification apparatus for a dry etching process of a chip according to claim 1, wherein: The pre-adsorption device (1) further comprises an adsorption plate (12), one circle of the inner wall of the pre-adsorption cylinder (11) is provided with a matching block (13), the matching block (13) is provided with a through groove (14) in the height direction of the pre-adsorption cylinder (11), the adsorption plate (12) is provided with an insertion block (121), the insertion block (121) is inserted into the through groove (14), and a plurality of air holes (17) are formed in the adsorption plate (12), and the adsorption medium is placed on the adsorption plate (12).

3. The gas purification apparatus for a dry etching process of a chip according to claim 2, wherein: The matching block (13) is further provided with a locking groove (15), the locking groove (15) is communicated with the through groove (14), the insertion block (121) is inserted into the through groove (14), and the adsorption plate (12) is rotated, and the insertion block (121) is inserted into the locking groove (15).

4. The apparatus for gas purification for a dry etching process of a chip according to claim 1, wherein: The air inlet manifold (111) is connected with a first air inlet pipe (7), the connecting pipe (112) is connected with a second air inlet pipe (8), and the first air inlet pipe (7) and the second air inlet pipe (8) are both provided with control valves.

5. The apparatus for gas purification for a dry etching process of a chip according to claim 1, wherein: The application further comprises a condensing device (5), the condensing device (5) is communicated with the air outlet pipe (23), and the gas is discharged from the equipment through the condensing device (5) after being purified.

6. The apparatus for gas purification for a dry etching process of a chip according to claim 1, wherein: The cracking cylinder (2) comprises an outer cylinder (21) and an inner cylinder (22), the inner cylinder (22) is installed in the outer cylinder (21), the placing element (9) is arranged at the top end of the inner cylinder (22), a plurality of peak-shaped holes are formed in the lower surface of the placing element (9), the side wall of the placing element (9) is clamped to the inner side wall of the outer cylinder (21), the air outlet pipe (23) penetrates through the outer cylinder (21) and is inserted into the placing element (9), the heating element (3) is inserted into the inner cylinder (22), one end of the heating element (3) extending out of the inner cylinder (22) is provided with an air inlet, and the connecting pipe (112) penetrates through the outer cylinder (21) and is communicated with the air inlet.

7. The gas purification apparatus for dry etching of a chip according to claim 6, wherein: The heating element (3) comprises a connecting end (31) and a plurality of heating pipes (32), the plurality of heating pipes (32) are installed on the end wall of the connecting end (31), a embedding hole is formed at the center of the placing element (9), the plurality of heating pipes (32) are inserted into the embedding hole, and the connecting end (31) is clamped to the outer wall of the embedding hole.

8. The apparatus for gas purification for a dry etching process of a chip according to claim 1, wherein: The auxiliary adsorption device (6) comprises an auxiliary air inlet pipe (61), an auxiliary adsorber (62) and an auxiliary pipe (63), the auxiliary air inlet pipe (61) and the auxiliary pipe (63) are both connected to the auxiliary adsorber (62), the auxiliary air inlet pipe (61) is communicated with the air inlet main pipe (111), and the auxiliary pipe (63) is communicated with the condensing device (5).

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