Cooling device for sapphire polycrystalline material production

Abstract

The utility model discloses a cooling device for sapphire polycrystalline material production, which comprises a cooling assembly, a first annealing assembly, a second annealing assembly, a third annealing assembly, a fourth annealing assembly and a fifth annealing assembly, the cooling assembly comprises an annealing cylinder, a main motor, a rotating shaft, stirring blades, a vacuumizing pump, a main temperature sensor, an air pressure sensor, a containing disc, a main heating plate, an annular air pipe, an air nozzle and an air inlet pipe. A cooling assembly, a first annealing assembly, a second annealing assembly, a third annealing assembly, a fourth annealing assembly and a fifth annealing assembly are arranged, five annealing assemblies are arranged on the periphery of an annealing cylinder, all the annealing assemblies are filled with argon at different temperatures, during annealing, argon boxes of adjacent temperature sections can be opened, argon is injected into the annealing boxes, and the annealing efficiency is improved. Therefore, the temperature in the annealing cylinder is rapidly and stably reduced, the temperature reduction is easier to control, the annealing period is shortened, and the annealing efficiency is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to sapphire polycrystalline material production technical field, specifically to a kind of cooling device for sapphire polycrystalline material production. BACKGROUND

[0002] Sapphire polycrystalline material refers to sapphire material composed of multiple small grains, and its crystal structure is hexagonal system, which is an important engineering material, has high hardness, high melting point, good chemical stability and excellent optical performance, and is widely used in optical elements, semiconductor industry, electronic consumer and mechanical aerospace fields.

[0003] During sapphire polycrystalline material production, the produced sapphire polycrystalline material needs to be annealed to eliminate internal stress during production, but the existing annealing method has long annealing cycle and low efficiency, and is prone to annealing failure due to large temperature difference. UTILITY MODEL CONTENT

[0004] The utility model aims at providing a kind of cooling device for sapphire polycrystalline material production, five annealing components are arranged around annealing cylinder, each annealing component is filled with argon gas of different temperature, when annealing, the argon gas tank of adjacent temperature section can be opened to inject argon gas into annealing tank, so that the temperature inside annealing cylinder is quickly and smoothly reduced, the temperature drop is more easily controlled, the annealing cycle is reduced, and the annealing efficiency is improved.

[0005] To achieve the above-mentioned purpose, a kind of cooling device for sapphire polycrystalline material production is provided, comprising: cooling component, first annealing component, second annealing component, third annealing component, fourth annealing component and fifth annealing component, the cooling component includes annealing cylinder, main motor, rotating shaft, stirring blade, vacuum pump, main temperature sensor, air pressure sensor, placement disc, main heating plate, annular air pipe, air nozzle and air inlet pipe, the top of the annealing cylinder is provided with upper cover, the top of the upper cover is fixedly connected with main motor, the bottom of the upper cover is rotatably connected with rotating shaft, the bottom output end of the main motor is fixedly connected with rotating shaft through upper cover, the circumferential surface of the rotating shaft is fixedly connected with stirring blade, the number of stirring blades is set to be multiple, and they are evenly distributed on the rotating shaft, the top of the upper cover is fixedly connected with vacuum pump, the bottom of the upper cover is fixedly connected with main temperature sensor and air pressure sensor, the main temperature sensor and air pressure sensor are respectively located on the left and right sides of the rotating shaft, the inside of the annealing cylinder is fixedly connected with placement disc and main heating plate, the placement disc is located above the main heating plate, the circumferential surface of the annealing cylinder is fixedly connected with annular air pipe, the annular air pipe is fixedly connected with air nozzle, the number of air nozzles is set to be multiple, and they are evenly distributed on the annular air pipe, the air outlet end of the air nozzle penetrates the annealing cylinder and is located in the inside of the annealing cylinder, the top of the upper cover is fixedly connected with air inlet pipe.

[0006] According to the cooling device for sapphire polycrystalline material production, the first annealing assembly comprises an argon tank, a secondary heating plate, a secondary temperature sensor and a circulating gas pump, the inside bottom surface of the argon tank is fixedly connected with the secondary heating plate, the inside side wall of the argon tank is fixedly connected with the secondary temperature sensor, the outside side wall of the argon tank is fixedly connected with the circulating gas pump, and the output end of the circulating gas pump is fixedly connected with the annular gas pipe.

[0007] According to the cooling device for sapphire polycrystalline material production, the stirring blade is located above the placing disc, and the stirring blade is located below the air nozzle.

[0008] According to the cooling device for sapphire polycrystalline material production, the structures of the second annealing assembly, the third annealing assembly, the fourth annealing assembly and the fifth annealing assembly are consistent with that of the first annealing assembly, and the first annealing assembly, the second annealing assembly, the third annealing assembly, the fourth annealing assembly and the fifth annealing assembly are annularly distributed around the annealing cylinder, and the inside temperatures of the argon tanks in the first annealing assembly, the second annealing assembly, the third annealing assembly, the fourth annealing assembly and the fifth annealing assembly are sequentially arranged from low to high.

[0009] According to the cooling device for sapphire polycrystalline material production, the upper cover and the annealing cylinder are fixed through a lock.

[0010] According to the cooling device for sapphire polycrystalline material production, the air inlet pipe and the vacuum pump are respectively located on the left and right sides of the main motor.

[0011] According to the cooling device for sapphire polycrystalline material production, the annealing cylinder, the upper cover and the argon tank are all made of high-temperature-resistant non-heat-conducting ceramic material.

[0012] Compared with the prior art, the cooling device for sapphire polycrystalline material production has the beneficial effects that: the cooling assembly, the first annealing assembly, the second annealing assembly, the third annealing assembly, the fourth annealing assembly and the fifth annealing assembly are arranged around the annealing cylinder, the inside of each annealing assembly is filled with argon gas of different temperatures, when annealing, the argon tanks of adjacent temperature sections can be opened to inject argon gas into the annealing tank, so that the temperature inside the annealing cylinder is quickly and stably reduced, the temperature drop is more easily controlled, the annealing period is shortened, and the annealing efficiency is improved.

[0013] Additional aspects and advantages of the present application will be described in the following description and become apparent from the following description or will be learned by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0014] The present application will be further described below in conjunction with the drawings and embodiments.

[0015] Figure 1The utility model discloses a cooling device for sapphire polycrystalline material production's front view;

[0016] Figure 2 The utility model discloses a cooling device for sapphire polycrystalline material production's cooling assembly section view;

[0017] Figure 3 The utility model discloses a cooling device for sapphire polycrystalline material production's first annealing assembly section view;

[0018] Figure 4 The utility model discloses a cooling device for sapphire polycrystalline material production's plan view.

[0019] In the drawing: 1, cooling assembly, 2, first annealing assembly, 3, second annealing assembly, 4, third annealing assembly, 5, fourth annealing assembly, 6, fifth annealing assembly, 101, annealing cylinder, 102, main motor, 103, rotating shaft, 104, stirring vane, 105, vacuum pump, 106, main temperature sensor, 107, air pressure sensor, 108, placing tray, 109, main heating plate, 110, annular air pipe, 111, air nozzle, 112, air inlet pipe, 201, argon tank, 202, secondary heating plate, 203, secondary temperature sensor, 204, circulating air pump. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments of the utility model will be clearly and completely described below with reference to the drawings in the embodiments of the utility model. Obviously, the described embodiments are only part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments of the utility model, all other embodiments obtained by those skilled in the art without creative work belong to the protection scope of the utility model.

[0021] Please refer to Figures 1-4The utility model provides a technical scheme: a cooling device for sapphire polycrystalline material production, it is cool subassembly 1, first annealing subassembly 2, second annealing subassembly 3, third annealing subassembly 4, fourth annealing subassembly 5 and fifth annealing subassembly 6, cool subassembly 1 includes annealing cylinder 101, main motor 102, pivot 103, stirring vane 104, vacuum pump 105, main temperature sensor 106, air pressure sensor 107, placing disc 108, main heating plate 109, annular air pipe 110, air cock 111 and air inlet pipe 112, the top of annealing cylinder 101 is provided with upper cover, and the upper cover is fixed with annealing cylinder 101 through lock (this is prior art, and here no longer elaborated), the top fixed connection of upper cover has main motor 102, the bottom rotary connection of upper cover has pivot 103, and the bottom output end of main motor 102 is fixedly connected with pivot 103 through upper cover, and the circumferential surface of pivot 103 is fixedly connected with stirring vane 104, the number of stirring vane 104 is provided with multiple, and evenly distributed on pivot 103, when starting main motor 102, can make pivot 103 rotate, to make stirring vane 104 to the gas in annealing cylinder 101 inside stirring, to make different temperature gas fast and even mixing, the top fixed connection of upper cover has vacuum pump 105, for the vacuumization to annealing cylinder 101 inside, the bottom fixed connection of upper cover has main temperature sensor 106 and air pressure sensor 107, and main temperature sensor 106 and air pressure sensor 107 are located at the left and right sides of pivot 103 respectively, are used for monitoring the temperature and air pressure in annealing cylinder 101 respectively, the inside fixed connection of annealing cylinder 101 has placing disc 108 and main heating plate 109, and placing disc 108 is located at the top of main heating plate 109, the circumferential surface of annealing cylinder 101 is fixedly connected with annular air pipe 110, and annular air pipe 110 is fixedly connected with air cock 111, the number of air cock 111 is provided with multiple, and evenly distributed on annular air pipe 110, and the gas outlet of air cock 111 penetrates annealing cylinder 101, and is located in the inside of annealing cylinder 101, and stirring vane 104 is located at the top of placing disc 108, and stirring vane 104 is located below air cock 111, the top fixed connection of upper cover has air inlet pipe 112, after completing last step cooling, open air inlet pipe 112 and make external gas enter annealing cylinder 101, after cooling, it is convenient to take out the sapphire polycrystalline material after annealing, and air inlet pipe 112 and vacuum pump 105 are located at the left and right sides of main motor 102 respectively.

[0022] The first annealing assembly 2 comprises an argon tank 201, a secondary heating plate 202, a secondary temperature sensor 203 and a circulating gas pump 204. The secondary heating plate 202 is fixedly connected to the inner bottom surface of the argon tank 201 and used for heating the internal argon. The secondary temperature sensor 203 is fixedly connected to the inner side wall of the argon tank 201 and used for monitoring the temperature of the internal argon. The circulating gas pump 204 is fixedly connected to the output end of the annular gas pipe 110. When the circulating gas pump 204 is started, the argon in the argon tank 201 can be injected into the annealing cylinder 101, so as to perform the annealing cooling operation.

[0023] The annealing cylinder 101, the upper cover and the argon tank 201 are made of high-temperature-resistant and non-heat-conducting ceramic materials, so as to form heat preservation and facilitate the annealing operation.

[0024] The second annealing assembly 3, the third annealing assembly 4, the fourth annealing assembly 5 and the fifth annealing assembly 6 have the same structure as the first annealing assembly 2 and are annularly distributed around the annealing cylinder 101. The internal temperatures of the argon tanks 201 in the first annealing assembly 2, the second annealing assembly 3, the third annealing assembly 4, the fourth annealing assembly 5 and the fifth annealing assembly 6 are arranged in sequence from low to high. During the annealing operation, the annealing cooling is performed from high temperature to low temperature. First, the circulating gas pump 204 in the fifth annealing assembly 6 is opened, the argon is slowly injected into the annealing cylinder 101, the internal temperature of the annealing cylinder 101 is slowly decreased, then the circulating gas pumps 204 in the fourth annealing assembly 5 and the fifth annealing assembly 6 are operated, the argon in the fifth annealing assembly 6 is recovered, then the internal temperature of the annealing cylinder 101 is decreased by the fourth annealing assembly 5, and the similar operations are repeated for the second annealing assembly 3, the third annealing assembly 4 and the fourth annealing assembly 5 in sequence. Until the low-temperature argon in the first annealing assembly 2 is injected into the annealing cylinder 101, the whole annealing cooling operation is completed. The segmented operation can more easily and accurately control the decreasing temperature, so that the annealing cooling is quickly and stably performed, and the annealing period is shortened and the annealing efficiency is improved.

[0025] Working principle: Put the sapphire polycrystalline material on the placing disc 108, cover the upper cover and form a seal, then start the vacuum pump 105, vacuumize, open the circulating gas pump 204 in the first annealing assembly 2, inject low-temperature argon, start the main heating plate 109, slowly heat, and cool down from high temperature to low temperature during annealing operation, open the circulating gas pump 204 in the fifth annealing assembly 6, slowly inject argon into the annealing cylinder 101 through the annular gas pipe 110 and the gas nozzle 111, start the main motor 102, stir the mixed gas with the stirring blade 104, make the gas mix quickly and uniformly, slowly drop the temperature in the annealing cylinder 101, then operate the circulating gas pumps 204 in the fourth annealing assembly 5 and the fifth annealing assembly 6, first recover part of argon in the fifth annealing assembly 6, then cool down the inside of the annealing cylinder 101 in the fourth annealing assembly 5, repeat the similar operation of the second annealing assembly 3, the third annealing assembly 4 and the fourth annealing assembly 5 in turn, until the low-temperature argon in the first annealing assembly 2 is injected into the annealing cylinder 101, complete the whole annealing cooling, finally start the vacuum pump 105 to remove the internal argon, open the air inlet pipe 112 to introduce external air, and then open the upper cover to take out the sapphire polycrystalline material.

[0026] The embodiments of the utility model are described in detail above combined with the drawings, but the utility model is not limited to the above-mentioned embodiments, and various changes can be made within the knowledge range possessed by the ordinary skilled in the art without departing from the purpose of the utility model.

Claims

1. A cooling device for producing a sapphire polycrystal material, characterized by, Include: Cooling assembly (1), first annealing assembly (2), second annealing assembly (3), third annealing assembly (4), fourth annealing assembly (5) and fifth annealing assembly (6), the cooling assembly (1) includes annealing cylinder (101), main motor (102), shaft (103), stirring blade (104), vacuum pump (105), main temperature sensor (106), air pressure sensor (107), placing disc (108), main heating plate (109), annular air pipe (110), air nozzle (111) and air inlet pipe (112), the top of the annealing cylinder (101) is provided with upper cover, the top of the upper cover is fixedly connected with main motor (102), the bottom of the upper cover is rotatably connected with the rotating shaft (103), the bottom output end of the main motor (102) penetrates the upper cover and is fixedly connected with the rotating shaft (103), a plurality of stirring blades (104) are fixedly connected on the circumference of the rotating shaft (103), the number of the stirring blades (104) is provided with a plurality of and is evenly distributed on the rotating shaft (103), the top of the upper cover is fixedly connected with the vacuum pump (105), the bottom of the upper cover is fixedly connected with the main temperature sensor (106) and the air pressure sensor (107), the main temperature sensor (106) and the air pressure sensor (107) are located on the left and right sides of the rotating shaft (103) respectively, the inside of the annealing cylinder (101) is fixedly connected with the placing disc (108) and the main heating plate (109), the placing disc (108) is located above the main heating plate (109), the circumference of the annealing cylinder (101) is fixedly connected with the annular air pipe (110), the annular air pipe (110) is fixedly connected with the air nozzle (111), the number of the air nozzle (111) is provided with a plurality of and is evenly distributed on the annular air pipe (110), the air outlet end of the air nozzle (111) penetrates the annealing cylinder (101) and is located in the inside of the annealing cylinder (101), the top of the upper cover is fixedly connected with the air inlet pipe (112).

2. The cooling device for producing a sapphire polycrystal material according to claim 1, wherein: The first annealing assembly (2) includes argon tank (201), secondary heating plate (202), secondary temperature sensor (203) and circulating air pump (204), the inside bottom surface of the argon tank (201) is fixedly connected with the secondary heating plate (202), the inside side wall of the argon tank (201) is fixedly connected with the secondary temperature sensor (203), the outside side wall of the argon tank (201) is fixedly connected with the circulating air pump (204), and the output end of the circulating air pump (204) is fixedly connected with the annular air pipe (110).

3. The cooling device for producing a sapphire polycrystal material according to claim 1, wherein: The stirring blade (104) is located above the placing disc (108), and the stirring blade (104) is located below the air nozzle (111).

4. The cooling device for producing a sapphire polycrystal material according to claim 2, wherein: The structure of the second annealing assembly (3), the third annealing assembly (4), the fourth annealing assembly (5) and the fifth annealing assembly (6) is consistent with that of the first annealing assembly (2), and they are annularly distributed around the annealing cylinder (101), and the inside temperature of the argon tank (201) in the first annealing assembly (2), the second annealing assembly (3), the third annealing assembly (4), the fourth annealing assembly (5) and the fifth annealing assembly (6) is arranged from low to high.

5. The cooling device for producing a sapphire polycrystal material according to claim 1, wherein: The upper cover and the annealing cylinder (101) are fixed by a lock.

6. The cooling device for producing a sapphire polycrystal material according to claim 1, wherein: The air inlet pipe (112) and the vacuum pump (105) are respectively located on the left and right sides of the main motor (102).

7. The cooling device for producing a sapphire polycrystal material according to claim 2, wherein: The annealing cylinder (101), the upper cover and the argon tank (201) are made of high-temperature-resistant and non-heat-conducting ceramic materials.

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