Diffusion plate for improving thickness uniformity of D-Poly film

Abstract

The utility model discloses a diffuser plate for improving D-Poly film thickness uniformity, and relates to the technical field of semiconductor processing equipment. Comprising outer side plates, inner side plates and connecting rods. The bottom of the outer side plate is provided with a notch part I matched with the wafer boat; a plurality of through holes I which are uniformly distributed are formed in the outer side plate; the bottom of the inner side plate is provided with a notch part II matched with the wafer boat; a plurality of through holes II which are uniformly distributed are formed in the inner side plate; the diameter of the through hole II is smaller than that of the through hole I; the number of the through holes II is greater than that of the through holes I; after a wafer is placed on the boat, the front end and the tail end of the boat are respectively provided with a diffuser plate, and the inner side plates of the diffuser plates face the direction of the wafer; gas flows out upwards from holes of the dispersion tube and reacts through the wafer, the reaction gas mainly flows on the surface of the silicon wafer, and the dispersion plate can enable the reaction gas to be more stable and saturated, reduce the gas loss speed, enable the gas to fully react and improve the uniformity.

Description

TECHNICAL FIELD

[0001] The utility model relates to semiconductor processing equipment especially to improve D-Poly film thickness uniformity's flow distribution plate. BACKGROUND

[0002] In the trench Schottky product manufacturing process, the gate oxide growth and D-Poly deposit are the key procedures, and it is a kind of technology that polycrystalline silicon growth and P doping are carried out simultaneously. Since P is doped while growing polycrystalline silicon, the diffusion process of P implantation after Poly-Si growth is greatly simplified. However, the reaction process is complicated after introducing PH3, and the adsorption rate and decomposition rate of PH3 and SiH4 are different, which makes it difficult to control uniformity. Therefore, how to improve the uniform distribution of gas flow in the furnace tube to wafer and improve the inter-sheet uniformity is a technical problem to be solved. SUMMARY

[0003] The utility model provides a kind of setting simple, improve the uniform distribution of gas flow in the furnace tube to wafer and improve the inter-sheet uniformity of the improvement D-Poly film thickness uniformity's flow distribution plate to the above problems.

[0004] The technical scheme of the utility model is:

[0005] The flow distribution plate for improving D-Poly film thickness uniformity comprises:

[0006] The outer side plate is provided with a notch part one matched with wafer boat at bottom, and a plurality of through holes one are evenly arranged on the outer side plate;

[0007] The inner side plate is provided with a notch part two matched with wafer boat at bottom, and a plurality of through holes two are evenly arranged on the inner side plate; the diameter of the through hole two is less than that of the through hole one; the number of the through hole two is greater than that of the through hole one;

[0008] The connecting rod is provided with a plurality of connecting rods, and is fixedly arranged between the inner side plate and the outer side plate.

[0009] Specifically, the connecting rod is provided with three connecting rods.

[0010] Specifically, the diameter of the through hole one is 10-12mm.

[0011] Specifically, the diameter of the through hole two is 4-6mm.

[0012] Specifically, the through hole one and the through hole two are staggered.

[0013] Specifically, the distance between the outer side plate and the inner side plate is 35-40mm.

[0014] The utility model has the beneficial effects that:

[0015] The utility model discloses a side plate, inner side plate and connecting rod. The bottom of the outer side plate is provided with a notch part one matched with a wafer boat, and a plurality of through holes one are evenly arranged on the outer side plate. The inner side plate is provided with a notch part two matched with the wafer boat at the bottom, and a plurality of through holes two are evenly arranged on the inner side plate. The diameter of the through holes two is smaller than that of the through holes one, and the number of the through holes two is greater than that of the through holes one. After placing the wafer on the boat, the front end and the tail end are placed with the heat dissipation plate respectively, and the inner side plate of the heat dissipation plate faces the wafer direction. The gas flows out from the hole of the dispersion pipe, reacts through the wafer, and the reaction gas mainly flows on the surface of the silicon wafer. The heat dissipation plate can make the reaction gas more stable and saturated, reduce the loss speed of the gas, make the gas fully react, and improve the uniformity. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 It is the structure schematic diagram of the utility model in use state;

[0017] Figure 2 It is the structure schematic diagram of the heat dissipation plate;

[0018] Figure 3 It is the structure schematic diagram of the inner side plate;

[0019] Figure 4 It is the structure schematic diagram of the outer side plate;

[0020] Figure 5 It is the structure schematic diagram of the inner and outer side plate overlap state;

[0021] In the drawing, 100 is the outer side plate, 110 is the notch part one, 120 is the through hole one,

[0022] 200 is the inner side plate, 210 is the notch part two, and 220 is the through hole two,

[0023] 300 is the connecting rod, 400 is the wafer, and 500 is the dispersion pipe. DETAILED DESCRIPTION

[0024] The embodiments of the utility model are described in detail below, and the examples of the embodiments are shown in the drawings, wherein the same or similar signs represent the same or similar elements or elements with the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary, only for explaining the utility model, and cannot be understood as the limitation of the utility model.

[0025] In the description of the utility model, it needs to be understood that the directions or position relations indicated by the terms "upper", "lower", "left", "right", "vertical", "horizontal" and the like are based on the directions or position relations shown in the drawings, and are only for the convenience of describing the utility model and simplifying the description, and thus cannot be understood as limiting the utility model. In the description of the utility model, unless otherwise specified, the meaning of "a plurality of" is two or more than two.

[0026] In the description of the utility model, it needs to be understood that the terms "mounting", "connection" and "connection" should be understood in a broad sense unless otherwise specified and limited, for example, it can be fixed connection, or detachable connection, or integrally connected, it can be mechanical connection, or electrical connection, it can be directly connected, or indirectly connected through an intermediate medium, or the communication between two elements. For ordinary skilled persons in the art, the specific meaning of the above terms in the utility model can be understood according to the specific circumstances.

[0027] Reference is made below Figures 1-5 to describe the utility model;

[0028] The flow distribution plate for improving the thickness uniformity of D-Poly film comprises:

[0029] The outer side plate is provided with a plurality of uniformly distributed through holes one on the upper surface.

[0030] The inner side plate is provided with a plurality of uniformly distributed through holes two on the upper surface.

[0031] The diameter of the through holes two is smaller than that of the through holes one, so that the reaction gas around the wafer is more stable and saturated, and the gas loss speed is reduced.

[0032] The number of the through holes two is greater than that of the through holes one, so that the reaction gas around the wafer is more stable and saturated, and the gas loss speed is reduced.

[0033] The connecting rods are fixedly arranged between the inner side plate and the outer side plate, that is, the inner side plate and the outer side plate are fixedly connected through the connecting rods.

[0034] As Figures 3-5 shown, the connecting rods are provided with three, and the three circular section line areas in the drawing are connecting rod mounting holes.

[0035] The diameter of the through holes one in the case is 10-12mm.

[0036] The diameter of the second through hole is 4-6mm.

[0037] The first through hole and the second through hole are staggered, as shown in the figure. Figure 5 After the outer and inner side plates are overlapped, there is no overlapping area between the two holes.

[0038] The distance between the outer side plate and the inner side plate is 35-40mm.

[0039] The use method of the heat dissipation plate is as follows:

[0040] After the wafer is placed on the boat, the front end and the tail end are respectively placed with the heat dissipation plate, and the inner side plate of the heat dissipation plate faces the wafer direction; the gas flows out from the hole of the dispersion pipe, passes through the wafer for reaction, and the reaction gas mainly flows on the surface of the silicon wafer. The heat dissipation plate can make the reaction gas more stable and saturated, reduce the loss rate of the gas, make the gas fully react, and improve the uniformity.

[0041] For the content disclosed in the present case, the following points need to be explained:

[0042] (1) The embodiment disclosed in the present case only involves the structure involved in the embodiment disclosed in the present case, and other structures can refer to the usual design.

[0043] (2) In the case of no conflict, the embodiments disclosed in the present case and the features in the embodiments can be combined to obtain new embodiments.

[0044] The above is only a specific embodiment disclosed in the present case, but the protection scope of the present disclosure is not limited to this. The protection scope of the present disclosure should be subject to the protection scope of the claims.

Claims

1. A flow distributor for improving the thickness uniformity of a D-Poly film, characterized in that, The utility model relates to a wafer boat support device, including: The outer side board is equipped with a plurality of evenly distributed through -hole one on the bottom of the wafer boat is equipped with the aperture part one suitable for adapting; The inner side board is equipped with a plurality of evenly distributed through -hole two on the bottom of the wafer boat is equipped with the aperture part two suitable for adapting;The diameter of through -hole two is less than the diameter of through -hole one;The number of through -hole two is greater than the number of through -hole one; The connecting rod is equipped with a plurality of, respectively fixedly arranged between the inner side board and the outer side board.

2. The flow distributor of claim 1, wherein, The connecting rod is equipped with three.

3. The flow spreader of claim 1, wherein, The diameter of through -hole one is 10-12mm.

4. The flow spreader of claim 1, wherein, The diameter of through -hole two is 4-6mm.

5. The flow spreader of claim 1, wherein, Through -hole one and through -hole two are staggered arrangement between.

6. The flow distributor of claim 1, wherein, The distance between the outer side board and the inner side board is 35-40mm.

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