Packaging structure of 34mm IGBT (Insulated Gate Bipolar Translator) module and 34mm IGBT module

Abstract

The utility model belongs to the technical field of chip packaging, and particularly relates to a packaging structure of a 34mm IGBT module and the 34mm IGBT module, which comprises a base station, a first DBC board, a second DBC board, a first signal terminal group and a second signal terminal group, the first DBC board and the second DBC board are arranged on the top surface of the base station, the first signal terminal group and the second signal terminal group are arranged on the top surface of the base station, a first IGBT chip is arranged on the first DBC board, and the first IGBT chip is connected with the first signal terminal group through a first line; the second DBC board is provided with a second IGBT chip, and the second IGBT chip is connected with a second signal terminal group through a second line. The length of the first circuit is the same as that of the second circuit, so that the length of signal loops of the upper bridge and the lower bridge of the DBC layout is consistent, signal collection during testing is ensured, and the chip placement area is increased, so that more chip combinations with different sizes and chips with higher power in the future can be better coped with.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the chip packaging technical field, concretely relates to 34mm IGBT module's packaging structure and 34mm IGBT module. BACKGROUND

[0002] In the IGBT module packaging field, it belongs to the microelectronic industry, and the IGBT is a kind of device combined by MOSFET and bipolar transistor, it combines the advantages of the two kinds of devices, it has the advantages of small driving power and fast switching speed of MOSFET device, and also has the advantages of low saturation voltage drop and large capacity of bipolar device, and its frequency characteristic is between MOSFET and power transistor, it can normally work in the frequency range of several tens of KHZ, and it is widely used in modern industrial electronic technology, such as frequency converter, air conditioner, welding machine, photovoltaic, automobile and other industries.

[0003] As shown in Figure 1 The signal loop of the upper bridge and the signal loop of the lower bridge in the existing DBC layout are of different lengths, which affects the signal acquisition during testing, and the existing DBC structure layout cannot meet the increasing power demand, and there are deficiencies in expansibility and universality, if there is a demand for increasing the power of the module, the chip area becomes larger, and the existing DBC structure cannot accommodate the chip, which leads to the failure to achieve the established target.

[0004] Therefore, due to the different lengths of the signal loop of the upper bridge and the signal loop of the lower bridge in the DBC layout, the technical problem of affecting the signal acquisition during testing needs to design a packaging structure of 34mm IGBT module and 34mm IGBT module.

[0005] It should be noted that the above information disclosed in the background section of the present application is only used to understand the background technology of the present application, therefore, the above description is not considered as the information of prior art. CONTENT OF THE UTILITY MODEL

[0006] The present application provides at least a packaging structure of 34mm IGBT module and 34mm IGBT module.

[0007] In the first aspect, the present application provides a packaging structure of 34mm IGBT module, comprising:

[0008] a base, a first DBC plate, a second DBC plate, a first signal terminal group and a second signal terminal group;

[0009] The first DBC plate and the second DBC plate are arranged on the top surface of the base, and the first DBC plate and the second DBC plate are arranged from left to right along the length direction of the base;

[0010] The first signal terminal group and the second signal terminal group are arranged on the top surface of the base platform, and the first signal terminal group and the second signal terminal group are arranged on the right side of the second DBC plate along the length direction of the base platform;

[0011] The first signal terminal group is arranged above the second signal terminal group along the width direction of the base platform;

[0012] The first IGBT chip is arranged on the first DBC plate, and the first IGBT chip is connected to the first signal terminal group through a first circuit;

[0013] The second IGBT chip is arranged on the second DBC plate, and the second IGBT chip is connected to the second signal terminal group through a second circuit;

[0014] The first circuit and the second circuit have the same length.

[0015] In an optional embodiment, a first wiring area is arranged below the first IGBT chip and on the first DBC plate, and a second wiring area is arranged on the right side of the first IGBT chip.

[0016] In an optional embodiment, a third wiring area is arranged above the second IGBT chip and on the second DBC plate, a fourth wiring area is arranged above the third wiring area, a fifth wiring area is arranged below the second IGBT chip, and a sixth wiring area is arranged on the left side of the second IGBT chip.

[0017] In an optional embodiment, the first IGBT chip is connected to the first signal terminal group through the first wiring area, the second wiring area, and the fourth wiring area in sequence, and the route in which the first IGBT chip is connected to the first signal terminal group is the first circuit.

[0018] The second IGBT chip is connected to the second signal terminal group through the third wiring area, the sixth wiring area, and the fifth wiring area, and the route in which the second IGBT chip is connected to the second signal terminal group is the second circuit.

[0019] In an optional embodiment, a pair of first power terminals are arranged on the first DBC plate, and the first power terminals are arranged close to the side edge of the first DBC plate away from the second DBC plate.

[0020] A solder mask layer is arranged around the first power terminal.

[0021] A second power terminal is arranged on the first DBC plate, and the second power terminal is arranged close to the lower right corner of the first DBC plate.

[0022] A solder mask layer is arranged around the second power terminal.

[0023] In an alternative embodiment, a pair of third power terminals are arranged on the second DBC board, and the third power terminals are arranged near the side of the second DBC board away from the first DBC board;

[0024] A solder resist layer is arranged around the third power terminals.

[0025] In an alternative embodiment, a first FRD chip is arranged on the first DBC board, and the first FRD chip is arranged on the right side of the first IGBT chip;

[0026] A second FRD chip is arranged on the second DBC board, and the second FRD chip is arranged on the left side of the second IGBT chip.

[0027] In an alternative embodiment, a housing is arranged above the first DBC board and the second DBC board, and the housing is connected to the base.

[0028] In an alternative embodiment, a first electrode is connected to the first power terminal, and the first electrode extends from the top surface of the housing;

[0029] A second electrode is connected to the second power terminal, and the second electrode extends from the top surface of the housing;

[0030] A third electrode is connected to the third power terminal, and the third electrode extends from the top surface of the housing;

[0031] A fourth electrode is connected to the terminal in the first signal terminal group that is not connected to the first IGBT chip, and the fourth electrode extends from the top surface of the housing.

[0032] In a second aspect, the embodiments of the present disclosure further provide a 34mm IGBT module,

[0033] The 34mm IGBT module is packaged by using the packaging structure.

[0034] The utility model discloses beneficial effect is, the packaging structure of this IGBT module, include: base, first DBC board, second DBC board, first signal terminal group and second signal terminal group, first DBC board with second DBC board set up in the base top surface, first DBC board is set up in second DBC board left side along the base length direction, first signal terminal group and second signal terminal group all set up in the base top surface, first signal terminal group and second signal terminal group are set up in second DBC board right side along the base length direction, first signal terminal group is set up in second signal terminal group above along the base width direction, first IGBT chip is provided on first DBC board, and first IGBT chip is connected first signal terminal group through first circuit, second IGBT chip is provided on second DBC board, and second IGBT chip is connected second signal terminal group through second circuit, first circuit with second circuit length is same, and then realizes the signal loop length consistency of DBC layout upper bridge, ensures the collection of signal when testing, and through the wiring area adjustment makes the signal loop length consistency of upper bridge, can make the increase of chip placement area, can better cope with more different size chip combination of future and higher power chip.

[0035] Other features and advantages of the present utility model will be set forth in the following description of the application, and in part will become apparent to those skilled in the art upon examination of the following or can be learned by practice of the present utility model. The objects and other advantages of the present utility model will be realized and attained by the structure particularly pointed out in the description, claims and drawings.

[0036] In order to make the above-mentioned purpose, features and advantages of the present utility model more obvious and easy to understand, the preferred embodiments are described in detail in this paper, and the accompanying drawings are described as follows. BRIEF DESCRIPTION OF DRAWINGS

[0037] In order to make the above-mentioned purpose, features and advantages of the present utility model more obvious and easy to understand, the preferred embodiments are described in detail in this paper, and the accompanying drawings are described as follows.

[0038] Figure 1 DBC packaging schematic diagram for prior art;

[0039] Figure 2 A packaging structure of a 34mm IGBT module provided by the embodiment of the present disclosure;

[0040] Figure 3 Electrode side view provided by the embodiment of the present disclosure;

[0041] Figure 4 A shell schematic diagram provided for the embodiments of the present disclosure;

[0042] Figure 5 A first circuit and a second circuit schematic diagram provided for the embodiments of the present disclosure.

[0043] In the figure:

[0044] 1 base, 2 first DBC plate, 3 second DBC plate, 4 first signal terminal group, 5 second signal terminal group, 6 first IGBT chip, 7 second IGBT chip, 8 first wiring area, 9 second wiring area, 10 third wiring area, 11 fourth wiring area, 12 fifth wiring area, 13 sixth wiring area, 14 first circuit, 15 second circuit, 16 first power terminal, 17 second power terminal, 18 third power terminal, 19 solder resist layer, 20 first FRD chip, 21 second FRD chip, 22 shell, 23 first electrode, 24 second electrode, 25 third electrode, 26 fourth electrode, 27 copper ring. DETAILED DESCRIPTION

[0045] In order to make the purpose, technical scheme and advantages of the embodiments of the utility model clearer, the technical scheme of the utility model will be described clearly and completely below in combination with the drawings. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the utility model.

[0046] As used herein, the phrases "in an embodiment", "according to an embodiment", "in some embodiments", and the like generally mean the fact that a particular feature, structure, or characteristic described after the phrase can be included in at least one embodiment of the present disclosure. Therefore, the particular feature, structure, or characteristic can be included in more than one embodiment of the present disclosure, so that these phrases do not necessarily refer to the same embodiment. As used herein, the terms "example", "exemplary", and the like are used as an example, instance, or illustration. Any implementation, aspect, or design described herein as "example" or "exemplary" is not necessarily interpreted as preferred or superior to other implementations, aspects, or designs. Instead, the use of the terms "example", "exemplary", and the like is intended to present the concept in a specific manner.

[0047] Some embodiments of the utility model will be described in detail below in combination with the drawings. In the case of no conflict, the following embodiments and features in the embodiments can be combined with each other.

[0048] As Figure 2 and Figure 5As shown, at least one disclosed embodiment provides a packaging structure of a 34mm IGBT module, comprising: a base 1, a first DBC plate 2, a second DBC plate 3, a first signal terminal group 4 and a second signal terminal group 5; the first DBC plate 2 and the second DBC plate 3 are arranged on the top surface of the base 1, and the first DBC plate 2 and the second DBC plate 3 are arranged from left to right along the length direction of the base 1, that is, the first DBC plate 2 is arranged on the left side of the second DBC plate 3 along the length direction of the base 1; the first signal terminal group 4 and the second signal terminal group 5 are arranged on the top surface of the base 1, and the first signal terminal group 4 and the second signal terminal group 5 are arranged on the right side of the second DBC plate 3 along the length direction of the base 1; the first signal terminal group 4 is arranged above the second signal terminal group 5 along the width direction of the base 1; the first DBC plate 2 is provided with a first IGBT chip 6, and the first IGBT chip 6 is connected to the first signal terminal group 4 through a first circuit 14; the second DBC plate 3 is provided with a second IGBT chip 7, and the second IGBT chip 7 is connected to the second signal terminal group 5 through a second circuit 15; the first circuit 14 and the second circuit 15 have the same length, thereby realizing the consistency of the signal loop length of the upper and lower bridges on the DBC layout, ensuring the collection of signals during testing, and through the adjustment of the wiring area, the consistency of the signal loop length of the upper and lower bridges can increase the chip placement area, better cope with future combinations of more different sizes of chips, and higher power chips, prepare for subsequent higher power modules (chips), and do not need to frequently update the DBC, saving the corresponding sample production time.

[0049] The base 1 is made of copper, the IGBT module is a 34mm IGBT module, the composite power device has the advantages of voltage type control, large input impedance, small driving power, simple control circuit, small switching loss, fast on-off speed, high working frequency, large component capacity, etc., and can be further provided with a freewheeling diode, an ultra-pure aluminum wire, etc., through the layout design of the DBC and the unique performance of the chip, through reflow sintering, aluminum wire bonding connection, supplemented by a protective shell and filled with silica gel; the DBC is an insulating copper-clad plate; the base 1 can also be provided with fixing hole positions at four corners.

[0050] In an alternative embodiment, on the first DBC plate 2, a first wiring area 8 is arranged below the first IGBT chip 6, and a second wiring area 9 is arranged to the right of the first IGBT chip 6; on the second DBC plate 3, a third wiring area 10 is arranged above the second IGBT chip 7, a fourth wiring area 11 is arranged above the third wiring area 10, a fifth wiring area 12 is arranged below the second IGBT chip 7, and a sixth wiring area 13 is arranged to the left of the second IGBT chip 7; the first IGBT chip 6 is connected to the first signal terminal group 4 through the first wiring area 8, the second wiring area 9, and the fourth wiring area 11 in sequence, and the route for the connection between the first IGBT chip 6 and the first signal terminal group 4 is the first line 14; the second IGBT chip 7 is connected to the second signal terminal group 5 through the third wiring area 10, the sixth wiring area 13, and the fifth wiring area 12, and the route for the connection between the second IGBT chip 7 and the second signal terminal group 5 is the second line 15; two terminals in the first signal terminal group 4 are arranged in an up-down manner, wherein the lower terminal is connected to the first IGBT chip 6 through the first line 14, and the first line 14 is the DBC lower bridge E signal loop; two terminals in the second signal terminal group 5 are arranged in an up-down manner, wherein the upper terminal is connected to the second IGBT chip 7 through the second line 15, and the second line 15 is the DBC upper bridge E signal loop; through the adjustment of the wiring area, the length of the signal loop of the upper and lower bridges in the DBC layout is consistent, the signal collection during the test is ensured, and the length consistency of the signal loop of the upper and lower bridges through the adjustment of the wiring area can increase the chip placement area, and better cope with more different sizes of chip combinations in the future and higher power chips.

[0051] In an alternative embodiment, a pair of first power terminals 16 is arranged on the first DBC plate 2, and the first power terminals 16 are arranged near the side of the first DBC plate 2 away from the second DBC plate 3; a solder resist layer 19 is arranged around the first power terminals 16, and the solder resist layer 19 can adopt solder resist green oil; a second power terminal 17 is arranged on the first DBC plate 2, and the second power terminal 17 is arranged near the lower right corner of the first DBC plate 2; a solder resist layer 19 is arranged around the second power terminal 17; the bottom of the first power terminal 16 and the second power terminal 17 is separately isolated by the solder resist layer 19, which better prevents the outflow of the solder paste during welding, thereby better ensuring the reliability of welding.

[0052] In an alternative embodiment, a pair of third power terminals 18 is arranged on the second DBC plate 3, and the third power terminals 18 are arranged near the side of the second DBC plate 3 away from the first DBC plate 2; a solder resist layer 19 is arranged around the third power terminals 18; the bottom of the third power terminals 18 is separately isolated by the solder resist layer 19, which better prevents the outflow of the solder paste during welding, thereby better ensuring the reliability of welding.

[0053] In an alternative embodiment, the first DBC board 2 is provided with a first FRD chip 20, the first FRD chip 20 is arranged on the right side of the first IGBT chip 6; the second DBC board 3 is provided with a second FRD chip 21, the second FRD chip 21 is arranged on the left side of the second IGBT chip 7; the first FRD chip 20 and the first IGBT chip 6 are soldered on the first DBC board 2 by tin paste; the first IGBT chip 6 is provided with a left G terminal, and the first FRD chip 20 is provided with a left E terminal; the second FRD chip 21 and the second IGBT chip 7 are soldered on the second DBC board 3 by tin paste; the second IGBT chip 7 is connected with the second FRD chip 21, and the second IGBT chip 7 is provided with a right G terminal and a right E terminal. The back circuit of the IGBT chip is positive, the front circuit of the IGBT chip is negative, and the use of the IGBT module is controlled by the gate signal.

[0054] As shown in Figure 4 In an alternative embodiment, the first DBC board 2 and the second DBC board 3 are covered with a shell 22, the shell 22 is connected with the base 1; the shell 22 can protect the first DBC board 2 and the second DBC board 3; the shell 22 and the base 1 are locked by a copper ring 27.

[0055] As shown in Figure 3 In an alternative embodiment, the first power terminal 16 is connected with a first electrode 23, the first electrode 23 extends from the top surface of the shell 22; the second power terminal 17 is connected with a second electrode 24, the second electrode 24 extends from the top surface of the shell 22; the third power terminal 18 is connected with a third electrode 25, the third electrode 25 extends from the top surface of the shell 22; the fourth electrode 26 is connected with the terminal in the first signal terminal group 4 which is not connected with the first IGBT chip 6, the fourth electrode 26 extends from the top surface of the shell 22; the first electrode 23, the second electrode 24, the third electrode 25 and the fourth electrode 26 are connected with the circuit inside the IGBT module, which can protect the circuit and have a more optimal application scenario, all the electrodes are made of copper material, the length and size of the electrodes are adapted to the shell 22, which can also improve the service life of the IGBT module.

[0056] At least one other disclosed embodiment also provides a 34mm IGBT module adopting the packaging structure of the above 34mm IGBT module.

[0057] In summary, the packaging structure of the IGBT module comprises a base 1, a first DBC plate 2, a second DBC plate 3, a first signal terminal group 4 and a second signal terminal group 5; the first DBC plate 2 and the second DBC plate 3 are arranged on the top surface of the base 1, the first DBC plate 2 is arranged on the left side of the second DBC plate 3 along the length direction of the base 1; the first signal terminal group 4 and the second signal terminal group 5 are both arranged on the top surface of the base 1, the first signal terminal group 4 and the second signal terminal group 5 are arranged on the right side of the second DBC plate 3 along the length direction of the base 1; the first signal terminal group 4 is arranged above the second signal terminal group 5 along the width direction of the base 1; the first DBC plate 2 is provided with a first IGBT chip 6, the first IGBT chip 6 is connected with the first signal terminal group 4 through a first circuit 14; the second DBC plate 3 is provided with a second IGBT chip 7, the second IGBT chip 7 is connected with the second signal terminal group 5 through a second circuit 15; the first circuit 14 and the second circuit 15 have the same length, thereby realizing the consistency of the signal loop length of the upper bridge and the lower bridge on the DBC layout, ensuring the signal collection during the test, and through the adjustment of the wiring area, the consistency of the signal loop length of the upper bridge and the lower bridge can increase the chip placement area, better cope with more different size chip combinations in the future, and higher power chips.

[0058] With the above ideal embodiments according to the present application as the inspiration, through the above description, relevant personnel can make various changes and modifications without deviating from the technical idea of the present application. The technical scope of the present application is not limited to the content in the specification, and must be determined according to the scope of the claims.

Claims

1. A packaging structure of a 34mm IGBT module, characterized by, include: Base (1), first DBC board (2), second DBC board (3), first signal terminal group (4), and second signal terminal group (5); The first DBC board (2) and the second DBC board (3) are disposed on the top surface of the base (1), and the first DBC board (2) and the second DBC board (3) are disposed from left to right along the length direction of the base (1); The first signal terminal group (4) and the second signal terminal group (5) are both disposed on the top surface of the base (1), and the first signal terminal group (4) and the second signal terminal group (5) are disposed on the right side of the second DBC board (3) along the length direction of the base (1); The first signal terminal group (4) is disposed above the second signal terminal group (5) along the width direction of the base (1); The first DBC board (2) is provided with a first IGBT chip (6), and the first IGBT chip (6) is connected to the first signal terminal group (4) through the first line (14). The second DBC board (3) is provided with a second IGBT chip (7), and the second IGBT chip (7) is connected to the second signal terminal group (5) through the second line (15); The first line (14) and the second line (15) have the same length.

2. The packaging structure of the 34mm IGBT module as described in claim 1, characterized in that: A first wiring area (8) is provided on the first DBC board (2) and below the first IGBT chip (6), and a second wiring area (9) is provided on the right side of the first IGBT chip (6).

3. The packaging structure of the 34mm IGBT module as described in claim 2, characterized in that: Located on the second DBC board (3), a third wiring area (10) is provided above the second IGBT chip (7), a fourth wiring area (11) is provided above the third wiring area (10), a fifth wiring area (12) is provided below the second IGBT chip (7), and a sixth wiring area (13) is provided on the left side of the second IGBT chip (7).

4. The packaging structure of the 34mm IGBT module as described in claim 3, characterized in that: The first IGBT chip (6) is connected to the first signal terminal group (4) in sequence through the first wiring area (8), the second wiring area (9) and the fourth wiring area (11). The route connecting the first IGBT chip (6) and the first signal terminal group (4) is the first line (14). The second IGBT chip (7) is connected to the second signal terminal group (5) through the third wiring area (10), the sixth wiring area (13) and the fifth wiring area (12). The route connecting the second IGBT chip (7) and the second signal terminal group (5) is the second line (15).

5. The packaging structure of the 34mm IGBT module as described in claim 1, characterized in that: The first DBC board (2) is provided with a pair of first power terminals (16), which are located on the side of the first DBC board (2) away from the second DBC board (3); The first power terminal (16) is provided with a solder resist layer (19) around it; The first DBC plate (2) is provided with a second power terminal (17) near the lower right corner of the first DBC plate (2); The second power terminal (17) is provided with a solder resist layer (19) around it.

6. The packaging structure of the 34mm IGBT module according to claim 5, wherein: The second DBC plate (3) is provided with a pair of third power terminals (18) near the side of the second DBC plate (3) away from the first DBC plate (2); The third power terminal (18) is provided with a solder resist layer (19) around it.

7. The packaging structure of the 34mm IGBT module according to claim 6, wherein: The first DBC plate (2) is provided with a first FRD chip (20) on the right side of the first IGBT chip (6); The second DBC plate (3) is provided with a second FRD chip (21) on the left side of the second IGBT chip (7).

8. The packaging structure of the 34mm IGBT module according to claim 7, wherein: The first DBC plate (2) and the second DBC plate (3) are covered with a shell (22), and the shell (22) is connected to the base (1).

9. The packaging structure of the 34mm IGBT module according to claim 8, wherein: The first power terminal (16) is connected with a first electrode (23) extending from the top surface of the shell (22); The second power terminal (17) is connected with a second electrode (24) extending from the top surface of the shell (22); The third power terminal (18) is connected with a third electrode (25) extending from the top surface of the shell (22); The terminal in the first signal terminal group (4) that is not connected with the first IGBT chip (6) is connected with a fourth electrode (26) extending from the top surface of the shell (22).

10. A 34mm IGBT module, characterized in that: The packaging structure of the 34mm IGBT module according to any one of claims 1-9 is adopted.

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