Solar cell module, photovoltaic equipment, power utilization device and power generation device

Abstract

The utility model relates to a solar cell module, a photovoltaic device, a power utilization device and a power generation device, during structural design, an energy absorption layer is arranged between a second electrode layer and a light absorption layer, and the energy absorption layer is penetrated by a third groove. Therefore, when P3 scribing is carried out on the second electrode layer, energy can penetrate through the second electrode layer to act on the energy absorption layer; or the energy generated on the second electrode layer is transmitted to the energy absorption layer. The energy absorption layer after absorbing energy can generate heat on the side, facing the light absorption layer, of the second electrode layer, so that under the condition that the second electrode layer is effectively cut, equivalently, cutting energy exists on the two surfaces of the second electrode layer, and the energy distribution is relatively uniform; and meanwhile, etching of the second electrode layer can be accelerated, so that the crater effect generated by P3 scribing on the edge of the third groove is reduced, and the preparation efficiency of the solar cell module is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cell, in particular to a solar cell module, a photovoltaic device, a power utilization device and a power generation device. BACKGROUND

[0002] The solar cell module is a kind of photoelectric device for converting solar energy into electric energy, and is currently one of the most potential new photovoltaic technologies.Laser scribing is widely used in the production of solar cell modules, for example: solar cell modules need P1, P2 and P3 laser scribing etching three times in the production process.P3 laser scribing is used to scribe the electrode layer on the top to break the electrode layer.However, due to the structure design of the traditional solar cell module, the "crater" effect is easily generated on the surface during the laser scribing process, which affects the preparation efficiency of the solar cell module. CONTENT OF THE UTILITY MODEL

[0003] Therefore, it is necessary to provide a solar cell module, a photovoltaic device, a power utilization device and a power generation device to reduce the "crater" effect generated on the surface during P3 laser scribing process and improve the preparation efficiency of the solar cell module.

[0004] In a first aspect, the present application provides a solar cell module, comprising: a first electrode layer, a light absorption layer and a second electrode layer which are sequentially stacked;

[0005] The solar cell module comprises a plurality of first grooves, second grooves and third grooves, the first grooves are arranged in the first electrode layer and penetrate the first electrode layer along the thickness direction of the solar cell module, the second grooves penetrate the light absorption layer along the thickness direction of the solar cell module and expose the first electrode layer, and the third grooves penetrate the second electrode layer along the thickness direction of the solar cell module; the second grooves are filled with conductive material to electrically connect the second electrode layer and the first electrode layer; wherein the solar cell module further comprises a plurality of energy absorption layers, the energy absorption layers are arranged between the second electrode layer and the light absorption layer and located on the side of the second groove away from the first groove, and the third grooves penetrate the energy absorption layers.

[0006] The above-mentioned solar cell module, in the structure design, the energy absorption layer is arranged between the second electrode layer and the light absorption layer, and the energy absorption layer is opposite to the third groove in the thickness direction of the solar cell module and is penetrated by the third groove.Therefore, when P3 scribing is performed on the second electrode layer, energy can act on the energy absorption layer through the second electrode layer; or the energy generated on the second electrode layer is transmitted to the energy absorption layer.The energy absorption layer after absorbing energy generates heat on the side of the second electrode layer facing the light absorption layer, which accelerates the etching of the second electrode layer, thereby reducing the "crater" effect generated on the edge of the third groove during P3 scribing and improving the preparation efficiency of the solar cell module.

[0007] In some embodiments, the third groove includes a first edge portion at each end along the preset direction, and the energy-absorbing layer includes a second edge portion at each end along the preset direction, each second edge portion extending beyond the corresponding first edge portion and outside the third groove, wherein the preset direction intersects the thickness direction. In this way, the size of the energy-absorbing layer along the preset direction is greater than the size of the second electrode layer that needs to be etched, so that the second electrode layer is effectively and quickly etched to form a stable third groove structure.

[0008] In some embodiments, the size of each second edge portion extending beyond the corresponding first edge portion is D, wherein 0mm < D≤1mm. In this way, the size of the second edge portion extending beyond the first edge portion is controlled to be between 0mm and 1mm, which reduces the area of the energy-absorbing layer in the preset direction and thus reduces the dead zone area and improves the efficiency of the component, while satisfying the quick etching of the second electrode layer.

[0009] In some embodiments, the thickness of the energy-absorbing layer is h, wherein 1nm≤h≤30nm. In this way, the thickness of the energy-absorbing layer is controlled to be between 1nm and 30nm, which controls the thickness of the energy-absorbing layer as much as possible and reduces the influence of the energy-absorbing layer on the electrical conductivity of the second electrode layer, while satisfying the effective acceleration of the etching speed of the second electrode layer.

[0010] In some embodiments, h also satisfies the condition: 1nm≤h≤10nm.

[0011] In some embodiments, the second electrode layer is configured as a transparent conductive structure, and the energy-absorbing layer is configured as a structure capable of absorbing part of the light energy transmitted through the second electrode layer and generating heat. In this way, the second electrode layer is designed as a transparent conductive structure, which facilitates the transmission of part of the light energy through the second electrode layer and the absorption of the light energy by the energy-absorbing layer, so as to achieve the accelerated etching of the second electrode layer.

[0012] In some embodiments, the energy-absorbing layer includes any one of an ultraviolet light absorption structure, an infrared absorption structure, and a green light absorption structure. In this way, the energy-absorbing layer absorbs ultraviolet light, infrared light, or green light outside the second electrode layer, so that the energy-absorbing layer generates heat on one side of the second electrode layer and accelerates the etching of the second electrode layer.

[0013] In some embodiments, the ultraviolet light absorption structure, the infrared absorption structure, and the green light absorption structure have a light transmittance of less than or equal to 1% for ultraviolet light, infrared light, and green light, respectively. In this way, the light transmittance of the energy-absorbing layer for ultraviolet light, infrared light, and green light is designed to be less than or equal to 1%, which facilitates the sufficient absorption of the light energy transmitted through the second electrode layer to generate a large amount of heat and accelerate the etching of the second electrode layer, thereby reducing the crater effect. At the same time, the light energy acting on the light-absorbing layer is reduced, which reduces the degradation of the light-absorbing layer due to heat damage and is conducive to improving the stability of the solar cell component.

[0014] In some embodiments, the ultraviolet light absorbing structure is configured to have a structure of one of titanium dioxide, zinc oxide, aluminum dioxide, molybdenum disulfide, carbon nanotube, salicylate, benzophenone, benzotriazole, substituted acrylonitrile, and triazine. With such a design, the energy absorbing layer is designed as an ultraviolet light absorbing structure, and the ultraviolet light transmitted through the second electrode layer can generate heat on the side of the second electrode layer facing the light absorbing layer, thereby improving the etching efficiency.

[0015] In some embodiments, the infrared light absorbing structure is configured to have a structure of one of carbon-based material, ferroelectric material, and organic dye. With such a design, the energy absorbing layer is designed as an infrared light absorbing structure, and the infrared light transmitted through the second electrode layer can generate heat on the side of the second electrode layer facing the light absorbing layer, thereby improving the etching efficiency.

[0016] In some embodiments, the green light absorbing structure is configured to have a structure of one of bilirubin, carbazoline, quinoline, and thiophene. With such a design, the energy absorbing layer is designed as a green light absorbing structure, and the green light transmitted through the second electrode layer can generate heat on the side of the second electrode layer facing the light absorbing layer, thereby improving the etching efficiency.

[0017] In some embodiments, the second electrode layer includes one of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, indium-doped gallium oxide, aluminum zinc oxide, and indium tungsten oxide. With such a design, a second electrode layer with good electrical conductivity and light transmission performance is obtained; at the same time, the energy absorbing layer can also absorb the light energy transmitted through the light, and the etching of the second electrode layer can be accelerated.

[0018] In some embodiments, the second electrode layer is configured as a metal structure, and the energy absorbing layer is configured as a structure capable of absorbing part of the heat energy generated by the second electrode layer and generating heat. With such a design, the energy absorbing layer absorbs part of the heat energy generated by the second electrode layer and generates heat on the side of the second electrode layer facing the light absorbing layer, which facilitates the diffusion of heat energy on the second electrode layer and accelerates the etching of the second electrode layer.

[0019] In some embodiments, the electron-phonon coupling coefficient of the energy absorbing layer is greater than the electron-phonon coupling coefficient of the second electrode layer. With such a design, the etching of the second electrode layer is accelerated, and the heat effect is also effectively slowed down from conducting to the side of the light absorbing layer, thereby reducing the probability of thermal degradation of the structure of the light absorbing layer.

[0020] In some embodiments, the energy-absorbing layer comprises one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, Lu, Hf, Ta, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Hs, Mt, Ds, Rg, Cn, and the second electrode layer comprises one of Cu, Ag and Au. In this way, the influence of the thermal effect on the degradation of the light-absorbing layer structure is effectively reduced in the case of accelerating the etching of the second electrode layer, and the stability of the component is improved.

[0021] In some embodiments, the solar cell component further comprises a first charge transport layer and / or a second charge transport layer, the first charge transport layer is located between the light-absorbing layer and the first electrode layer, and the second charge transport layer is located between the light-absorbing layer and the second electrode layer. In this way, the introduction of the first charge transport layer and / or the second charge transport layer facilitates the export or import of charges, which is conducive to improving the performance of the solar cell component.

[0022] In some embodiments, the second groove penetrates the first charge transport layer and / or the second charge transport layer. In this way, a series-connected solar cell component can be obtained.

[0023] In some embodiments, the light-absorbing layer is a perovskite light-absorbing layer. In this way, the design of the light-absorbing layer as a perovskite light-absorbing layer facilitates the obtaining of a perovskite solar cell component with stable structure.

[0024] In a second aspect, the present application provides a photovoltaic device, which comprises the solar cell component of any one of the above.

[0025] In a third aspect, the present application provides an electric device, which comprises the solar cell component of any one of the above.

[0026] In a fourth aspect, the present application provides a power generation device, which comprises the solar cell component of any one of the above. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 A structural schematic diagram of the solar cell component described in some embodiments of the present application.

[0028] Figure 2 A structural schematic diagram of the solar cell component described in some embodiments of the present application.

[0029] Figure 3 A structural schematic diagram of the solar cell component described in some embodiments of the present application. Figure 2 A structural enlarged schematic diagram of the structure at circle A.

[0030] 100, solar cell module; 11, first transport layer; 111, second groove; 12, light absorbing layer; 13, second transport layer; 20, second electrode layer; 21, third groove; 211, first edge portion; 30, energy absorbing layer; 31, second edge portion; 40, first electrode layer; 41, first groove; 50, substrate; X, preset direction; Y, thickness direction. DETAILED DESCRIPTION

[0031] In order to make the above objectives, features and advantages of the present application more clear and easy to understand, the specific embodiments of the present application will be described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application. However, the present application can be practiced in a variety of ways other than those described herein without departing from the spirit of the present application, and it will be apparent to those skilled in the art that similar improvements can be made with the present application without departing from the scope of the present application, and therefore the present application is not limited to the specific embodiments disclosed below.

[0032] In the description of the present application, it should be understood that if these terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the purpose of facilitating the description of the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0033] In addition, if these terms "first", "second" appear, these terms are only for the purpose of description, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features limited by "first", "second" can explicitly or implicitly include at least one of the features. In the description of the present application, if the term "multiple" appears, the meaning of "multiple" is at least two, such as two, three, etc., unless otherwise specifically limited.

[0034] In the present application, unless otherwise specifically defined and limited, if the terms "mounting", "connecting", "connecting", "fixing" and the like appear, these terms should be understood in a broad sense. For example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium; it can be the internal communication of two elements or the interaction relationship between two elements, unless otherwise specifically limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0035] In this application, unless otherwise explicitly specified and limited, if there is a description of a first feature "on" or "under" a second feature, etc., it can mean that the first and second features are in direct contact, or the first and second features are indirectly in contact through an intermediate medium. Moreover, the first feature "on", "above" and "over" the second feature can be that the first feature is directly above or obliquely above the second feature, or only means that the first feature is higher in horizontal height than the second feature. The first feature "under", "below" and "under" the second feature can be that the first feature is directly below or obliquely below the second feature, or only means that the first feature is lower in horizontal height than the second feature.

[0036] It should be noted that if an element is referred to as being "fixed to" or "set to" another element, it can be directly on the other element or there can be an intermediate element. If an element is considered to be "connected" to another element, it can be directly connected to the other element or there can be an intermediate element. If present, the terms "vertical", "horizontal", "up", "down", "left", "right" and similar expressions used in this application are only for illustrative purposes and do not mean the only implementation.

[0037] A solar cell module is a kind of photovoltaic device that directly converts solar energy into electrical energy, and is currently one of the most potential new photovoltaic technologies. Laser scribing is widely used in the production of solar cell modules. For example, in a perovskite solar cell module, a first electrode layer is deposited on a substrate, and the first electrode layer is P1 scribed by laser scribing. Then, a first transport layer, a perovskite layer and a second transport layer are deposited; P2 scribing is performed by laser scribing; finally, a second electrode layer at the top is deposited, and P3 scribing is performed by laser scribing, so that a plurality of third grooves are formed on the second electrode layer, so that the second electrode layer is separated into a plurality of mutually separated structures.

[0038] However, due to the structural design of the traditional solar cell module, in the P3 scribing process, the laser energy is generally transmitted from one surface of the second electrode layer to the other surface, resulting in uneven distribution of laser energy, which cannot quickly cut off the second electrode layer, thereby causing the edges of the third grooves formed to be excessively melted, forming a "crater" effect. This increases the cost of processing the crater for subsequent preparation of the solar cell module, and affects the preparation efficiency of the solar cell module.

[0039] To this end, in view of the problem that the traditional solar cell module is prone to "crater" effect when P3 scribing, affecting the preparation efficiency of the solar cell module, the application provides a solar cell module, which is provided with an energy absorption layer between the second electrode layer and the light absorption layer in the structural design, and the energy absorption layer is opposite to the third groove in the thickness direction of the solar cell module and is penetrated by the third groove. Therefore, when the second electrode layer is subjected to P3 scribing, energy can act on the energy absorption layer through the second electrode layer, or the energy generated on the second electrode layer is transmitted to the energy absorption layer. The energy absorption layer after absorbing energy generates heat on the side of the second electrode layer facing the light absorption layer, so that the second electrode layer is effectively cut, and the cutting energy is equivalent to being provided on both surfaces of the second electrode layer, so that the energy distribution is relatively uniform, and the etching of the second electrode layer is accelerated, thereby reducing the "crater" effect of P3 scribing on the edge of the third groove, and improving the preparation efficiency of the solar cell module.

[0040] The application provides a power consumption device using a battery as a power source, which can be but is not limited to a tablet computer, a notebook computer, an electric toy, an electric tool, an electric car, an electric automobile, a ship, a spacecraft, a space station, etc. The electric toy can include a fixed or mobile electric toy, for example, a game console, an electric car toy, an electric ship toy, an electric plane toy, etc.

[0041] According to some embodiments of the application, referring to Figure 1 The application provides a solar cell module 100, which comprises a first electrode layer 40, a light absorption layer 12 and a second electrode layer 20 arranged in sequence. The solar cell module comprises a plurality of first grooves 41, second grooves 111 and third grooves 21. The first grooves 41 are arranged in the first electrode layer 40 and penetrate the first electrode layer 40 along the thickness direction Y of the solar cell module 100. The second grooves 111 penetrate the light absorption layer 12 along the thickness direction Y of the solar cell module 100 and expose the first electrode layer 40. The third grooves 21 penetrate the second electrode layer 20 along the thickness direction Y of the solar cell module 100. The second grooves 111 are filled with conductive material to electrically connect the second electrode layer 40 and the first electrode layer 20. The solar cell module further comprises a plurality of energy absorption layers 30, which are arranged between the second electrode layer 20 and the light absorption layer 12 and located on the side of the second grooves 111 away from the first grooves 41. The third grooves 21 penetrate the energy absorption layers 30.

[0042] The first electrode layer 40 can be a metal structure or a transparent conductive structure. In some embodiments, the first electrode layer 40 is a transparent conductive structure, which can be used for light incidence, such as a transparent conductive oxide film, which has an average transmittance of more than 80% in the visible light range (wavelength 380 (nm) nm~760 nm corresponds to energy 3.26ev (electron volts)~1.63ev), and has high conductivity and low resistivity of less than 1*10 -3 Ω*cm (ohm*cm). The material can be selected from, but not limited to, indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), and aluminum doped zinc oxide (AZO), lanthanide metal doped indium oxide, antimony doped tin oxide, boron doped zinc oxide (BZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), etc. In other embodiments, the first electrode layer 40 is a metal structure, and the second electrode layer 20 is a transparent conductive structure, which can be used for light incidence.

[0043] The light absorbing layer 12 is a component that converts light energy into electrical energy. Incident light (e.g., sunlight) enters the interior of the device, and then reaches the light absorbing layer and is absorbed by the light absorbing layer. The light absorbing layer generates hole-electron pairs under the excitation of incident light. The holes and electrons are separated under the action of an electric field. The electrons are transported to one electrode, and the holes are transported to the other electrode. Then, a loop is formed through an external circuit, which can be used to drive a load to work. The light absorbing layer 12 can be one of a perovskite light absorbing layer, a copper indium gallium selenide light absorbing layer, a cadmium telluride light absorbing layer, an organic material light absorbing layer, etc., which are not limited herein.

[0044] Taking the perovskite solar cell assembly 100 as an example, the light absorbing layer 12 is a perovskite light absorbing layer. The material of the perovskite light absorbing layer satisfies the chemical formula ABX3 or A2CDX6; wherein A is an inorganic cation or an organic ammonium cation or a mixture of the two, which can be at least one of formamidinium ion (FA), methylammonium ion (MA), and Cs + B is an inorganic metal cation, which can be one or more of Pb 2+ , Sn 2+ , Fe 2+ , Mn 2+ , Ni 2+ , Ge 2+ , Co 2+ , and Sb 2+ C is a noble metal cation, which is commonly Ag + D is a heavy metal or rare metal cation, which can be a bismuth cation Bi 3+ , an antimony cation Sb 3+, and indium cation In 3+ X is halogen or pseudo-halogen anion, which can be at least one of Cl - , Br - , I - , SCN - , BF4 - . For example, the structure of perovskite light-absorbing layer can be Cs 0.05 FA 0.95 PbBr 0.15 I 2.85 , Cs 0.1 MA 0.15 FA 0.75 PbCl 0.15 I 2.85 , MAPbI3, FAPbI3, (FA 0.83 MA 0.17 ) 0.95 Cs 0.05 Pb(I 0.83 Br 0.17 )3, CsPbI3, CsPbI2Br, CsPbIBr2.

[0045] In some embodiments, the second electrode layer 20 can be a transparent conductive structure, such as one having an average transmittance of more than about 80% in the visible light range (wavelength 380 (nanometers) nm ~ 760 nm corresponding to energy 3.26ev (electron volts) ~ 1.63ev), and high conductivity, resistivity less than 1 x 10 -3 Ω·cm (ohm·cm). The material can be selected from, but not limited to, indium doped tin oxide (ITO), fluorine doped tin oxide (FTO), and aluminum doped zinc oxide (AZO), lanthanide metal doped indium oxide, antimony doped tin oxide, boron doped zinc oxide (BZO), indium zinc oxide (IZO), gallium zinc oxide (GZO), indium tungsten oxide (IWO), etc. In other embodiments, the second electrode layer 20 can also be a metal structure, and the material can be selected from, but not limited to, Ag, Au, Cu, etc.

[0046] The first trench 41 refers to the recess structure formed when the first electrode layer 40 is P1 scribed, which mainly cuts the whole first electrode layer 40. The second trench 111 refers to a structure that at least penetrates the light-absorbing layer 12, such as when P2 scribing is performed, the laser scribing can cut the light-absorbing layer 12 and form a second trench 111 on the light-absorbing layer 12. Of course, please refer to Figure 2In the case where the first charge transport layer 11 and the second charge transport layer 13 are included in the solar cell module 100, the P2 scribe line can be performed on the surface of the second charge transport layer 13, so that the second groove 111 penetrates the first charge transport layer 11, the light absorbing layer 12 and the second charge transport layer 13. At this time, in forming the second electrode layer 20, a part of the second electrode layer 20 can be filled in the second groove 111, serving as a conductive material to realize the electrical connection between the second electrode layer 20 and the first electrode layer 40 below the second groove 111, so as to realize the series connection of the adjacent sub-cells. In some embodiments, a conductive material different from the material of the second electrode layer can also be filled in the second groove, which can realize the electrical connection between the second electrode layer 20 and the first electrode layer 40 below the second groove 111 to realize the series connection of the sub-cells. The conductive material can be a metal material such as Ag, Au, Pt, Cu, etc., or a conductive carbon material, etc. Here, the type of the conductive material filled in the second groove 111 is not limited.

[0047] In some embodiments, the third groove 21 is arranged one-to-one with the second groove 111, and each third groove 21 is located on the same side of the corresponding second groove 111, for example: Figure 2 For example, each third groove 21 is located on the right side of the corresponding second groove 111, where the right side refers to the side facing Figure 2 the second electrode layer 20. In other words, each second groove 111 is taken as the center, the right side of each second groove 111 is the right side.

[0048] The energy absorbing layer 30 refers to a structure capable of absorbing part of the light energy transmitted through the second electrode layer 20, or absorbing the heat energy generated in the laser scribe of the second electrode layer 20, and capable of generating heat. The relative position of the energy absorbing layer 30 to the third groove 21 in the thickness direction Y of the solar cell module 100 indicates that the projection of the third groove 21 along the thickness direction Y of the solar cell module 100 is located on the energy absorbing layer 30, of course, it can also be understood that the energy absorbing layer 30 is located below the third groove 21. Each third groove 21 penetrates the corresponding energy absorbing layer 30, which means that the energy absorbing layer 30 is also cut off in the P3 scribe process, so as to ensure that the part of the second electrode layer 20 located on both sides of the third groove 21 is completely cut off. At the same time, when the energy absorbing layer 30 is cut off, there is a certain space between the second electrode layer 20 and the light absorbing layer 10, which can slow down the heat diffusion towards the light absorbing layer 10 side, and reduce the thermal damage to the light absorbing layer 10.

[0049] Here, the energy absorbing layer 30 is located on the side of the second groove 111 away from the first groove 41, which means that when the energy absorbing layer 30 is arranged, one end thereof will not extend into the second groove 111, so that the arrangement of the energy absorbing layer 30 will not affect the filling of the second electrode layer 20 in the second groove 111.

[0050] In some embodiments, in the case that the second electrode layer 20 is a transparent conductive structure, the laser partial energy can be transmitted through the second electrode layer 20 and act on the energy absorption layer 30. After the energy absorption layer 30 absorbs part of the light energy, heat will be generated on the side of the second electrode layer 20 facing the light absorption layer 10. At this time, the second electrode layer 20 has heat sources on both sides along the thickness direction Y of the solar cell module 100, so that the energy on the second electrode layer 20 tends to be more uniform; at the same time, it also accelerates the etching and breaking of the second electrode layer 20. The material of the energy absorption layer 30 can be selected differently according to the type of laser. For example, in the case of ultraviolet laser, the energy absorption layer 30 is an ultraviolet light absorption structure, and the type of ultraviolet light absorption structure can be at least one of titanium dioxide, zinc oxide, aluminum dioxide, molybdenum disulfide, carbon nanotubes, salicylate, benzophenone, benzotriazole, substituted acrylonitrile, and triazine. In the case of infrared laser, the energy absorption layer 30 is an infrared absorption structure, and the type of infrared absorption structure can be at least one of carbon-based material, ferroelectric material, and organic dye. In the case of green laser, the energy absorption layer 30 is a green light absorption structure, and the type of green light absorption structure can be at least one of bilirubin, carbazoline, quinoline, and thiophene.

[0051] In addition, it should be noted that in the case that the energy absorption layer 30 is a material with stronger electron-phonon coupling performance than the material of the second electrode layer, the third groove 21 can penetrate the energy absorption layer 30 during the P3 scribing process. This not only separates the second electrode layer 20 into multiple mutually insulated structures, but also slows down the heat conduction towards the side of the light absorption layer 10, which is beneficial to protect the light absorption layer 10 from being damaged by heat.

[0052] In this way, the energy absorption layer 30 after absorbing energy will generate heat on the side of the second electrode layer 20 facing the light absorption layer 10. In the case that the second electrode layer 20 is effectively cut, it is equivalent to having cutting energy on both surfaces of the second electrode layer 20, so that the energy distribution is relatively uniform; at the same time, it can also accelerate the etching of the second electrode layer 20, thereby reducing the "crater" effect generated by P3 scribing on the edge of the third groove 21, and improving the preparation efficiency of the solar cell module 100.

[0053] Figure 2According to some embodiments of the present application, optionally, please refer to Figure 3 The two ends of the third groove 21 along the preset direction X respectively include a first edge part 211, and the two ends of the energy absorption layer 30 along the preset direction X respectively include a second edge part 31. Each second edge part 31 exceeds the corresponding first edge part 211 and is located outside the third groove 21, wherein the preset direction X intersects the thickness direction Y.

[0054] The first edge part 211 refers to one end of the third groove 21 along the preset direction X, and the second edge part 31 refers to one end of the energy absorption layer 30 along the preset direction X. When the second edge part 31 exceeds the corresponding first edge part 211, the size of the energy absorption layer 30 along the preset direction X is greater than the size of the third groove 21.

[0055] In the P3 scribing process, the second electrode layer 20 at the position of the third groove 21 needs to be removed by laser scribing. Therefore, in this embodiment, the size of the energy absorption layer 30 along the preset direction X is greater than the size of the third groove 21, and the energy absorption layer 30 is located directly below the third groove 21. In this way, after energy absorption, the energy absorption layer 30 can release heat to the part of the second electrode layer 20 at the position of the third groove 21, accelerating the etching of the second electrode layer 20 to form the third groove 21.

[0056] Such design makes the size of the energy absorption layer 30 along the preset direction X greater than the size of the second electrode layer 20 that needs to be etched, so that the second electrode layer 20 is effectively and quickly etched to form a stable third groove 21 structure.

[0057] According to some embodiments of the present application, optionally, please refer to Figure 3 The size of each second edge part 31 exceeding the corresponding first edge part 211 is denoted as D, wherein 0mm < D≤ 1mm.

[0058] The size of the second edge part 31 exceeding the first edge part 211 should not be too large, so as to reduce the occupation of the effective area of the solar cell module 100 along the preset direction X.

[0059] Therefore, the size D of the second edge part 31 exceeding can be between 0mm and 1mm, such as but not limited to 0.1mm, 0.2mm, 0.3mm, 0.4mm, 0.5mm, 0.6mm, 0.7mm, 0.8mm, 0.9mm, 1mm.

[0060] Such design controls the size of the second edge part 31 exceeding the first edge part 211 between 0mm and 1mm, which reduces the area occupation of the energy absorption layer 30 along the preset direction X in the case of quickly etching the second electrode layer 20, so as to minimize the dead area and improve the efficiency of the module.

[0061] According to some embodiments of the present application, optionally, refer to Figure 3 The thickness of the energy absorption layer 30 is denoted as h, wherein 1nm≤h≤30nm.

[0062] The thickness of the energy absorption layer 30 can be between 1nm and 30nm, such as but not limited to 1nm, 5nm, 10nm, 15nm, 20nm, 25nm, 30nm, etc. Of course, in some embodiments, the thickness of the energy absorption layer 30 can also be between 1nm and 10nm, such as but not limited to 1nm, 2nm, 3nm, 4nm, 5nm, 6nm, 7nm, 8nm, 9nm, 10nm, etc.

[0063] In this way, the thickness of the energy absorption layer 30 is controlled between 1nm and 30nm, which can accelerate the etching speed of the second electrode layer 20 while minimizing the impact of the energy absorption layer 30 on the conductivity of the second electrode layer 20.

[0064] According to some embodiments of the present application, optionally, the second electrode layer 20 is configured as a transparent conductive structure, and the energy absorption layer 30 is configured as a structure capable of absorbing part of the light energy transmitted through the second electrode layer 20 and generating heat.

[0065] In the case of a transparent conductive structure of the second electrode layer 20, part of the laser energy will pass through the second electrode layer 20 and reach the energy absorption layer 30. After the energy absorption layer 30 absorbs part of the light energy, it will generate a part of the heat to accelerate the etching of the second electrode layer 20.

[0066] In this way, the second electrode layer 20 is designed as a transparent conductive structure, which facilitates the transmission of part of the light energy and the absorption of the energy absorption layer 30, so as to achieve the accelerated etching of the second electrode layer 20.

[0067] According to some embodiments of the present application, optionally, the energy absorption layer 30 includes any one of an ultraviolet light absorption structure, an infrared absorption structure, and a green light absorption structure.

[0068] The ultraviolet light absorption structure refers to a structure that can absorb ultraviolet light transmitted through the second electrode layer 20 during laser line etching and generate a large amount of heat using the ultraviolet light. The infrared absorption structure refers to a structure that can absorb infrared transmitted through the second electrode layer 20 during laser line etching and generate a large amount of heat using the infrared. The green light absorption structure refers to a structure that can absorb green light transmitted through the second electrode layer 20 during laser line etching and generate a large amount of heat using the green light.

[0069] Meanwhile, it should be noted that, in the case of the energy absorption layer 30 being an ultraviolet light absorption structure, the laser used is an ultraviolet laser; in the case of the energy absorption layer 30 being an infrared absorption structure, the laser used is an infrared laser; and in the case of the energy absorption layer 30 being a green light absorption structure, the laser used is a green laser.

[0070] It can be understood that the wavelength of the ultraviolet laser is generally in the range of 350nm-400nm, the wavelength of the infrared laser is generally in the range of 1000nm-1100nm, and the wavelength of the green laser is generally in the range of 525nm-532nm. Here, only the wavelength of the laser is simply exemplified, and the corresponding wavelength range is not strictly limited.

[0071] In this way, the energy absorption layer 30 is designed to absorb ultraviolet light, infrared light, or green light that has passed through the second electrode layer 20, so that the energy absorption layer 30 generates heat on one side of the second electrode layer 20, thereby accelerating the etching of the second electrode layer 20.

[0072] According to some embodiments of the present application, the ultraviolet light absorption structure, the infrared absorption structure, and the green light absorption structure have a light transmittance of less than or equal to 1% for ultraviolet light, infrared light, and green light, respectively.

[0073] The light transmittance of the energy absorption layer 30 affects the amount of heat generated by the energy absorption layer 30. For example, if the light transmittance of the energy absorption layer 30 is relatively large, the energy absorption layer 30 absorbs relatively little light energy, and generates relatively little heat, which is not conducive to rapidly etching the second electrode layer 20. At the same time, if the light transmittance of the energy absorption layer 30 is designed to be relatively large, part of the light energy can pass through and act on the light absorption layer 10, thereby causing the light absorption layer 10 to be damaged by heat.

[0074] In addition, it should be noted that, in the case of the energy absorption layer 30 being an ultraviolet light absorption structure, the light transmittance of the energy absorption layer 30 for ultraviolet light is less than or equal to 1%; in the case of the energy absorption layer 30 being a green light absorption structure, the light transmittance of the energy absorption layer 30 for green light is less than or equal to 1%; and in the case of the energy absorption layer 30 being an infrared absorption structure, the light transmittance of the energy absorption layer 30 for infrared light is less than or equal to 1%.

[0075] In this way, the light transmittance of the energy absorption layer 30 for ultraviolet light, infrared light, and green light is designed to be less than or equal to 1%, which facilitates the absorption of light energy that has passed through the second electrode layer 20, so as to generate a large amount of heat and accelerate the etching of the second electrode layer 20, thereby reducing the crater effect. At the same time, the light energy is reduced from acting on the light absorption layer 10, thereby reducing the degradation of the light absorption layer 10 due to heat damage, and improving the stability of the solar cell module 100.

[0076] According to some embodiments of the present application, optionally, the ultraviolet light absorption structure is configured to have a structure of one of titanium dioxide, zinc oxide, aluminum dioxide, molybdenum disulfide, carbon nanotubes, salicylate, benzophenone, benzotriazole, substituted acrylonitrile, and triazine.

[0077] In the P3 scribing, the second electrode layer 20 is scribed by using ultraviolet laser. In the scribing process, the parameters of the laser can be adjusted according to actual needs, such as: the wavelength of the ultraviolet laser is 350nm-360nm; the average power of the laser is 2W-12W; the spot diameter of the laser is 5μm-50μm; the pulse width of the laser is 8ps-15ps; the pulse energy of the laser is 5μJ-10μJ, etc.

[0078] In this way, the energy absorption layer 30 is designed as an ultraviolet light absorption structure, and heat can be generated on the side of the second electrode layer 20 facing the light absorption layer 10 by using ultraviolet light that transmits through the second electrode layer 20, thereby improving the etching efficiency.

[0079] According to some embodiments of the present application, optionally, the infrared absorption structure is configured to have a structure of one of carbon-based materials, ferroelectric materials, and organic dyes.

[0080] In the P3 scribing, the second electrode layer 20 is scribed by using infrared laser. In the scribing process, part of the infrared light transmits through the second electrode layer 20 and reaches the energy absorption layer 30. The energy absorption layer 30 absorbs part of the infrared light and generates heat, thereby accelerating the etching of the second electrode layer 20.

[0081] The carbon-based materials can be various, such as but not limited to carbon nanotubes, graphene, nano-carbon black, etc. Meanwhile, the ferroelectric materials can be but not limited to ferriferrous oxide, strontium titanate, etc. The organic dyes can be but not limited to acridine dyes, benzothiophene dyes, aluminum phthalocyanine dyes, etc.

[0082] In this way, the energy absorption layer 30 is designed as an infrared absorption structure, and heat can be generated on the side of the second electrode layer 20 facing the light absorption layer 10 by using infrared light that transmits through the second electrode layer 20, thereby improving the etching efficiency.

[0083] According to some embodiments of the present application, optionally, the green light absorption structure is configured to have a structure of one of bilirubin, carbazoline, quinoline, and thiophene.

[0084] In the P3 scribing, the second electrode layer 20 is scribed by using green laser. In the scribing process, part of the green light transmits through the second electrode layer 20 and reaches the energy absorption layer 30. The energy absorption layer 30 absorbs part of the green light and generates heat, thereby accelerating the etching of the second electrode layer 20.

[0085] In this way, the energy absorption layer 30 is designed as a green light absorption structure, and the green light transmitted through the second electrode layer 20 can generate heat on the side of the second electrode layer 20 facing the light absorption layer 10, thereby improving the etching efficiency.

[0086] According to some embodiments of the present application, the second electrode layer 20 can optionally include one of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, indium-doped gallium oxide, aluminum zinc oxide, and indium tungsten oxide.

[0087] The indium tin oxide, also known as ITO, has the combined properties of electrical conductivity and optical transparency. Meanwhile, the fluorine-doped tin oxide is also known as FTO, the indium zinc oxide is also known as IZO, the indium-doped gallium oxide is also known as GZO, the aluminum zinc oxide is also known as AZO, and the indium tungsten oxide is also known as IWO.

[0088] In this way, the second electrode layer 20 has good electrical conductivity and light transmission performance, and the energy absorption layer 30 can also absorb the light energy transmitted through the second electrode layer 20 to accelerate the etching of the second electrode layer 20.

[0089] According to some embodiments of the present application, the second electrode layer 20 can be configured as a metal structure, and the energy absorption layer 30 can be configured as a structure capable of absorbing part of the heat energy generated by the second electrode layer 20 and generating heat.

[0090] It can be known that when the second electrode layer 20 is designed as a metal structure, its light transmission performance is relatively poor. Therefore, the energy absorption layer 30 can absorb part of the heat energy generated by the metal structure to achieve self-heating. The second electrode layer 20 can be, but is not limited to, one of Cu, Ag, or Au.

[0091] In this way, the energy absorption layer 30 can absorb part of the heat energy generated by the second electrode layer 20 and generate heat on the side of the second electrode layer 20 facing the light absorption layer 10, which facilitates the diffusion of heat energy on the second electrode layer 20 and accelerates the etching of the second electrode layer 20.

[0092] According to some embodiments of the present application, the energy absorption layer 30 can have an electron-phonon coupling coefficient greater than that of the second electrode layer 20.

[0093] The electron-phonon coupling coefficient refers to a key parameter that controls the heat relaxation rate between electrons and lattices (the time required for the temperature to drop to half of the time corresponding to the rate of heat energy transmission and dissipation to adjacent organizations). The electron-phonon coupling coefficient usually ranges from 0 to 1, indicating the strength of the interaction between electrons and lattices.

[0094] In the case that the electron-phonon coupling coefficient of the energy absorption layer 30 is greater than that of the second electrode layer 20, the heat energy on the second electrode layer 20 will be quickly transferred to the energy absorption layer 30, and the energy absorption layer 30, relying on its stronger electron-phonon coupling performance, shows a stronger warming effect, generating a large amount of heat on the side of the second electrode layer 20, accelerating the etching of the second electrode layer 20. At the same time, under the excitation of the laser, the energy absorption layer 30 reaches the gasification temperature in a shorter time than the second electrode layer 20 reaches the melting temperature, so that the second electrode layer 20 is peeled off, and the heat effect is effectively blocked from conducting to the side of the light absorption layer 12, reducing the probability of thermal degradation of the structure of the light absorption layer 12.

[0095] In this way, in the case of accelerating the etching of the second electrode layer 20, the heat effect can also be effectively blocked from conducting to the side of the light absorption layer 12, reducing the probability of thermal degradation of the structure of the light absorption layer 12.

[0096] According to some embodiments of the present application, optionally, the energy absorption layer 30 includes one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, Lu, Hf, Ta, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Hs, Mt, Ds, Rg, Cn, and the second electrode layer 20 includes one of Cu, Ag and Au.

[0097] In this way, in the case of accelerating the etching of the second electrode layer 20, the heat effect can also be effectively blocked from conducting to the side of the light absorption layer 12, reducing the probability of thermal degradation of the structure of the light absorption layer 12.

[0098] According to some embodiments of the present application, optionally, please refer to Figure 2 The solar cell module 100 further includes a first charge transport layer 11 and / or a second charge transport layer 13, the first charge transport layer 11 is located between the light absorption layer 12 and the first electrode layer 40, and the second charge transport layer 13 is located between the light absorption layer 12 and the second electrode layer 20.

[0099] The first charge transport layer 11 and the second charge transport layer 13 respectively refer to the layer structure stacked on both sides of the light absorption layer 12, mainly serving to transport electrons or holes. Taking the first electrode layer 40 as a transparent conductive structure for the light incident end as an example, the first charge transport layer 11 can be an electron charge transport layer, and the second charge transport layer 13 can be a hole charge transport layer, at this time the solar cell module 100 is nip type (formal structure); or, the first charge transport layer 11 can be a hole charge transport layer, and the second charge transport layer 13 can be an electron charge transport layer, at this time the solar cell module 100 is pin type (reverse structure).

[0100] The electron charge transport layer can not only transport electrons but also block holes. The material of the electron charge transport layer can include at least one of [6,6]-phenyl-C61-butyric acid methyl ester, C60, polyaniline containing a cyano group, a polymer containing boron, bathocuproin, red phenanthroline, aluminum quinolinol, an oxadiazole compound, a benzimidazole compound, a naphthalene tetracarboxylic acid compound, a perylene derivative, a phosphine oxide compound, a phosphine sulfide compound, a phthalocyanine containing a fluorine group, titanium oxide (TiO2), zinc oxide (ZnO), tin oxide (SnO2), indium oxide (In2O3), gallium oxide (Ga2O3), tin sulfide (SnS), indium sulfide (In2O3), lithium fluoride (LiF), sodium fluoride (NaF), magnesium fluoride (MgF2), and zinc sulfide (ZnS).

[0101] The hole charge transport layer can not only transport holes but also block electrons. The material of the hole charge transport layer can include at least one of thiophene, phthalocyanine, porphyrin, 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene, molybdenum oxide (MoO3), vanadium oxide (V2O5), tungsten oxide (WO3 and / or WO2), nickel oxide (NiO), copper oxide (CuO), tin oxide (SnO2), molybdenum sulfide (MoS2), tungsten sulfide (WS2), copper sulfide (CuS), tin sulfide (SnS), cuprous thiocyanate (CuSCN), copper iodide (CuI), a phosphonic acid containing a fluorine group, a phosphonic acid containing a carbonyl group, carbon nanotubes, and graphene.

[0102] It should be noted that the solar cell module 100 can only be provided with the first charge transport layer 11, or can only be provided with the second charge transport layer 13. Of course, in some embodiments, the solar cell module 100 can also not be provided with the first charge transport layer 11 and the second charge transport layer 13, so as to realize the design of the solar cell module 100 without a transport layer, and realize low cost and high efficiency.

[0103] The P1-P3 lines can be designed in different ways according to actual needs. For example, when performing the P1 line, the first electrode layer 40 can be only lined on the surface of the first electrode layer 40 to cut off the first electrode layer 40, or the P1 line can be performed on the first charge transport layer 11 so that the first charge transport layer 11 and the first electrode layer 40 are cut off at the same time. For example, in the preparation process, the first electrode layer 40 and the first charge transport layer 11 can be sequentially produced, and then the two layers are subjected to the P1 line.

[0104] In addition, in some embodiments, the solar cell module 100 further includes a substrate 50, the first electrode layer 40 is arranged on the substrate 50, and a plurality of first grooves 41 are arranged on the first electrode layer 40 in the preset direction X. The light-absorbing layer 10 is arranged on the first electrode layer 40 and fills a part of the first grooves 41.

[0105] The base 50 refers to a substrate. The base 50 can be made of glass, tempered glass, quartz, organic flexible material, etc. The base 50 can also be made of transparent conductive glass, stainless steel conductive flexible substrate, polyethylene glycol terephthalate (PET) conductive flexible substrate, etc.

[0106] In this way, the first charge transport layer 11 and / or the second charge transport layer 13 are introduced to facilitate the export or import of charges, thereby improving the performance of the solar cell module 100.

[0107] According to some embodiments of the present application, the second groove 111 can pass through the first charge transport layer 11 and / or the second charge transport layer 13.

[0108] According to the arrangement of the first charge transport layer 11 and the second charge transport layer 13, the second groove 111 can pass through the first charge transport layer 11 and / or the second charge transport layer 13, thereby facilitating the series connection of the first electrode layer 40 and the second electrode layer 20 during the manufacturing process.

[0109] In this way, the solar cell module 100 in series can be obtained.

[0110] According to some embodiments of the present application, the light-absorbing layer 12 can be a perovskite light-absorbing layer.

[0111] It can be understood that the light-absorbing layer 12 can be of various types, such as copper indium gallium selenide, cadmium telluride, perovskite, etc. In this embodiment, the light-absorbing layer 12 is further limited to a perovskite light-absorbing layer.

[0112] The perovskite layer has a chemical formula of ABX3 or A2CDX6. A is an inorganic cation or an organic ammonium cation or a mixture of the two, which can be at least one of formamidinium ion (FA), methylammonium ion (MA), and Cs. B is an inorganic metal cation, which can be one or more of Pb 2+ , Sn 2+ , Fe 2+ , Mn 2+ , Ni 2+ , Ge 2+ , Co 2+ , and Sb 2+ . C is a noble metal cation, which is usually Ag + . D is a heavy metal or rare metal cation, which can be at least one of bismuth cation Bi 3+ , antimony cation Sb 3+ , and indium cation In 3+ . X is a halogen or pseudo-halogen anion, which can be Cl- Br - I - SCN - BF4 - at least one of the following.

[0113] In addition, the solar cell module 100 of the embodiment can be a single-layer structure or a laminated structure. For example, the perovskite cell of the embodiment can be laminated with other complete cells, such as a copper indium gallium selenide cell, a cadmium telluride cell, a perovskite cell, and the like. An insulating layer can be arranged between the cells. Of course, in the laminated structure, the perovskite light-absorbing layer can also be arranged in multiple layers. For example, the laminated structure can include a first electrode layer, a first charge transport layer, a perovskite light-absorbing layer, a second charge transport layer, a composite layer (third charge transport layer), a perovskite light-absorbing layer, a fourth charge transport layer, a second electrode layer, and the like.

[0114] In this way, the light-absorbing layer 12 is designed as a perovskite light-absorbing layer, which facilitates obtaining a perovskite solar cell module with stable structure.

[0115] According to some embodiments of the present application, the present application provides a photovoltaic device, which includes the solar cell module 100 of any one of the above.

[0116] According to some embodiments of the present application, the present application provides an electric device, which includes the solar cell module 100 of any one of the above.

[0117] According to some embodiments of the present application, the present application provides a power generation device, which includes the solar cell module 100 of any one of the above.

[0118] The power generation device refers to a power generation system for directly converting solar radiation energy into electric energy by photovoltaic effect. The power generation device includes a stand-alone photovoltaic power generation system and a grid-connected photovoltaic power generation system. The stand-alone photovoltaic power generation system includes a solar photovoltaic array composed of a photovoltaic module, a battery pack, a charge controller, a power electronic converter (inverter), a load, and the like. The grid-connected photovoltaic power generation system includes a photovoltaic array, a high-frequency DC / DC boost circuit, a power electronic converter (inverter), and a system monitoring part.

[0119] According to some embodiments of the present application, please refer to Figures 1 to 3The application provides a solar cell module 100, which comprises a substrate 50, a first electrode layer 40, a first transfer layer 11, a light absorption layer 12, a second transfer layer 13, a plurality of energy absorption layers 30 and a second electrode layer 20 which are sequentially stacked, and each energy absorption layer 30 is located at a position opposite to each third groove 21 on the second electrode layer 20. The energy absorption layer 30 can comprise one of an ultraviolet absorption structure, an infrared absorption structure and a green light absorption structure, so as to absorb part of light energy which penetrates through the second electrode layer 20, rapidly generate a large amount of heat, accelerate etching of the second electrode layer 20 and reduce the crater effect generated in laser scribing.

[0120] Meanwhile, the energy absorption layer 30 can also comprise a transition metal, and the second electrode layer 20 can comprise one of Cu, Ag and Au. The transition metal has strong electron-phonon coupling performance and can quickly generate a large amount of heat. Meanwhile, the transition metal can also be quickly vaporized, so that the heat conduction time is shortened and the influence of the heat effect on the material below the energy absorption layer 30 is reduced.

[0121] The technical features of the above-described embodiments can be combined in any manner. To make the description concise, all possible combinations of the technical features in the above-described embodiments are not described, however, as long as the combinations of the technical features do not exist in contradiction, they should be considered as the scope of the present application.

[0122] The above-described embodiments only express several implementation manners of the application, the description is relatively specific and detailed, however, it should not be understood as a limitation on the patent application scope. It should be pointed out that, for ordinary skilled in the art, several modifications and improvements can be made without departing from the concept of the application, and these all belong to the protection scope of the application. Therefore, the patent protection scope of the application should be subject to the appended claims.

Claims

1. A solar cell module, characterized by, The solar cell module comprises a first electrode layer, a light absorption layer and a second electrode layer which are sequentially stacked; The solar cell module comprises a plurality of first grooves, second grooves and third grooves, the first grooves are arranged in the first electrode layer and penetrate the first electrode layer along the thickness direction of the solar cell module, the second grooves penetrate the light absorption layer along the thickness direction of the solar cell module and expose the first electrode layer, and the third grooves penetrate the second electrode layer along the thickness direction of the solar cell module; the second grooves are filled with conductive materials to electrically connect the second electrode layer and the first electrode layer. The solar cell module further comprises a plurality of energy absorption layers, the energy absorption layers are arranged between the second electrode layer and the light absorption layer and located on the side of the second grooves away from the first grooves, and the third grooves penetrate the energy absorption layers.

2. The solar cell module according to claim 1, characterized by The third grooves comprise first edge portions at both ends along a preset direction, and the energy absorption layers comprise second edge portions at both ends along the preset direction, each second edge portion exceeds the corresponding first edge portion and is located outside the third groove, and the preset direction intersects the thickness direction.

3. The solar cell module according to claim 2, characterized by, The size of each second edge portion exceeding the corresponding first edge portion is D, and 0mm < D ≤ 1mm.

4. The solar cell module according to claim 1, characterized by The thickness of the energy absorption layer is h, and 1nm ≤ h ≤ 30nm.

5. The solar cell module according to claim 4, characterized by h also satisfies the condition of 1nm ≤ h ≤ 10nm.

6. The solar cell module according to any one of claims 1 to 5, characterized by, The second electrode layer is configured as a transparent conductive structure, and the energy absorption layer is configured as a structure capable of absorbing part of light energy transmitted through the second electrode layer and generating heat.

7. The solar cell module according to claim 6, characterized by The energy absorption layer comprises any one of ultraviolet light absorption structures, infrared absorption structures and green light absorption structures.

8. The solar cell module according to claim 7, characterized by The ultraviolet light absorption structures, infrared absorption structures and green light absorption structures respectively have a light transmittance of less than or equal to 1% for ultraviolet light, infrared light and green light.

9. The solar cell module according to claim 7, wherein The ultraviolet light absorption structure is configured as a structure having one of titanium dioxide, zinc oxide, aluminum dioxide, molybdenum disulfide, carbon nanotubes, salicylate, benzophenone, benzotriazole, substituted acrylonitrile and triazine; or The infrared absorption structure is configured as a structure having one of carbon-based materials, ferroelectric materials and organic dyes; or The green light absorption structure is configured as a structure having one of bilirubin, carbazoline, quinoline and thiophene.

10. The solar cell module according to claim 7, wherein The second electrode layer comprises one of indium tin oxide, fluorine-doped tin oxide, indium zinc oxide, indium-doped gallium oxide, aluminum zinc oxide and indium tungsten oxide.

11. The solar cell module according to any one of claims 1 to 5, characterized by, The second electrode layer is configured as a metal structure, and the energy absorption layer is configured as a structure capable of absorbing part of heat energy generated by the second electrode layer and generating heat.

12. The solar cell module according to claim 11, characterized by The electron-phonon coupling coefficient of the energy absorption layer is greater than the electron-phonon coupling coefficient of the second electrode layer.

13. The solar cell module according to claim 12, characterized by The energy absorbing layer comprises one of Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Zn, Y, Zr, Nb, Mo, Tc, Ru, Rh, Pd, Cd, Lu, Hf, Ta, W, Re, Os, Ir, Lr, Rf, Db, Sg, Bh, Hs, Mt, Ds, Rg, Cn, and the second electrode layer comprises one of Cu, Ag, and Au.

14. The solar cell module according to any one of claims 1 to 5, characterized by, The solar cell module further comprises a first charge transport layer and / or a second charge transport layer, the first charge transport layer being located between the light absorbing layer and the first electrode layer, and the second charge transport layer being located between the light absorbing layer and the second electrode layer.

15. The solar cell module according to claim 14, characterized by The second trench extends through the first charge transport layer and / or the second charge transport layer.

16. The solar cell module according to any one of claims 1 to 5, wherein The light absorbing layer is a perovskite light absorbing layer.

17. A photovoltaic device, characterized by The photovoltaic device comprises the solar cell module of any one of claims 1-16.

18. An electrical device, comprising: The power consuming device comprises the solar cell module of any one of claims 1-16.

19. A power generation device characterized by comprising: The power generating device comprises the solar cell module of any one of claims 1-16.

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