Epitaxial device

Abstract

The utility model relates to an epitaxial device. The epitaxial device comprises a growth chamber, a transmission chamber, a loading chamber and a gas balance structure, wherein the transmission chamber is positioned between the growth chamber and the loading chamber; the gas balance structure comprises a first gas source and a second gas source, a hot exhaust duct; the first vacuum generator comprises a first air inlet, a first exhaust port and a first vacuum suction port, the first air inlet is communicated with the first air source, the first exhaust port is communicated with the hot exhaust pipe, and the first vacuum suction port is communicated with the transmission cavity. According to the utility model, residual air in the hot exhaust pipe is prevented from entering the growth chamber, the cleanliness in the growth chamber is ensured, and the quality of an epitaxial process in the growth chamber is further improved.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor manufacturing technology, and in particular to an epitaxial device. Background Technology

[0002] To achieve automated wafer transport and growth, thereby improving the production efficiency of semiconductor devices, epitaxial wafer apparatuses typically include a load lock, a transport chamber, and a growth chamber. The transport chamber is located between the load lock and the growth chamber, through which the wafer sequentially enters the growth chamber. The load lock receives wafers from the outside environment, and the transport chamber transports the received wafers to the growth chamber, where the epitaxial growth process is performed. To ensure the cleanliness of the gas atmosphere within the load lock, transport chamber, and growth chamber, pressure balance must be maintained in all three chambers during wafer transport and in a static (idle) state.

[0003] In current epitaxial wafer fabrication equipment, the gases in the transfer chamber and the loading chamber are discharged into a hot exhaust duct. However, the hot exhaust duct is suspended and unfixed within the epitaxial wafer fabrication equipment, which makes it prone to shaking or fluctuation. When the hot exhaust duct fluctuates, the gases in the loading and transfer chambers are not fully discharged, potentially leaving residual air. This residual air can enter the growth chamber during wafer transfer, affecting the cleanliness of the growth chamber and the growth quality of the epitaxial layer. Furthermore, when the hot exhaust duct fluctuates, air from the duct may also enter the stationary loading and transfer chambers, and this air can also enter the growth chamber during wafer transfer, affecting the cleanliness of the growth chamber and the growth quality of the epitaxial layer. Furthermore, when fluctuations occur in the hot exhaust duct, the wafer is being transferred between the transfer chamber and the loading chamber. Air from the hot exhaust duct then enters the transfer chamber and the loading chamber, and subsequently enters the growth chamber, affecting the cleanliness of the growth chamber and the growth quality of the epitaxial layer.

[0004] Therefore, how to reduce the amount of air entering the transfer chamber and the loading chamber from the hot exhaust duct, thereby ensuring the cleanliness of the growth chamber and improving the growth quality of the epitaxial layer, is a technical problem that urgently needs to be solved. Summary of the Invention

[0005] This invention provides an epitaxial device for reducing the amount of air entering the transfer chamber and the loading chamber from the hot exhaust duct, thereby ensuring the cleanliness of the growth chamber and improving the growth quality of the epitaxial layer.

[0006] According to some embodiments, this utility model provides an epitaxial device, including a growth chamber, a transfer chamber, a loading chamber, and a gas balancing structure, wherein the transfer chamber is located between the growth chamber and the loading chamber; wherein the gas balancing structure includes:

[0007] First gas source;

[0008] Heat exhaust duct;

[0009] The first vacuum generator includes a first air inlet, a first exhaust outlet, and a first vacuum suction inlet. The first air inlet is connected to the first air source, the first exhaust outlet is connected to the hot exhaust pipe, and the first vacuum suction inlet is connected to the transmission chamber.

[0010] In some embodiments, the gas balance structure further includes:

[0011] The exhaust pipe is connected to the first vacuum inlet of the first vacuum generator;

[0012] The first exhaust branch pipe has one end connected to the transmission chamber and the other end connected to the exhaust main pipe;

[0013] The second exhaust branch pipe is connected at one end to the loading chamber and at the other end to the exhaust main pipe.

[0014] In some embodiments, the gas balance structure further includes:

[0015] The first air inlet pipe has one end connected to the first air source and the other end connected to the first air inlet of the first vacuum generator;

[0016] A first flow control valve is installed in the first air inlet pipe. The first flow control valve is used to adjust the flow rate of the gas transmitted from the first gas source to the first vacuum generator.

[0017] In some embodiments, the gas balance structure further includes:

[0018] The first negative pressure sensor is installed in the exhaust pipe;

[0019] The first flow control valve is connected to the first negative pressure sensor and is used to automatically adjust the flow rate of the gas transmitted from the first gas source to the first vacuum generator according to the pressure value detected by the first negative pressure sensor.

[0020] In some embodiments, the loading chamber includes a loading air inlet and a loading air outlet, the transfer chamber includes a transfer air inlet and a transfer air outlet, the first exhaust branch pipe is connected to the transfer air outlet, and the second exhaust branch pipe is connected to the loading air outlet; the extension device further includes:

[0021] The second gas source is connected to the loading air inlet and the transmission air inlet, and is used to purge the loading chamber and the transmission chamber with gas.

[0022] In some embodiments, the first gas source and the second gas source use the same type of gas.

[0023] In some embodiments, both the first gas source and the second gas source are nitrogen gas sources.

[0024] In some embodiments, the gas balance structure further includes:

[0025] The second vacuum generator includes a second air inlet, a second exhaust outlet, and a second vacuum suction inlet. The second air inlet is connected to the first air source, the second exhaust outlet is connected to the hot exhaust pipe, and the second vacuum suction inlet is connected to the loading chamber.

[0026] In some embodiments, the gas balance structure further includes:

[0027] The first air inlet pipe has one end connected to the first air source and the other end connected to the first air inlet of the first vacuum generator;

[0028] The second air inlet pipe has one end connected to the first air source and the other end connected to the second air inlet of the second vacuum generator;

[0029] A first flow control valve is installed in the first air inlet pipe. The first flow control valve is used to adjust the flow rate of the gas transmitted from the first gas source to the first vacuum generator.

[0030] The second flow control valve is installed in the second air inlet pipe. The second flow control valve is used to adjust the flow rate of the gas transmitted from the first gas source to the second vacuum generator.

[0031] In some embodiments, the gas balance structure further includes:

[0032] The second negative pressure sensor is connected to the transmission chamber;

[0033] The third negative pressure sensor is connected to the loading chamber;

[0034] The second flow control valve is connected to the second negative pressure sensor and is used to automatically adjust the flow rate of the gas transmitted from the first gas source to the first vacuum generator according to the pressure value detected by the second negative pressure sensor.

[0035] The second flow control valve is connected to the third negative pressure sensor and is used to automatically adjust the flow rate of the gas transmitted from the first gas source to the second vacuum generator according to the pressure value detected by the third negative pressure sensor.

[0036] The epitaxial device provided by this utility model, by setting a gas balance structure including a first gas source, a hot exhaust pipe and a first vacuum generator, and by connecting the first air inlet of the first vacuum generator to the first gas source, the first exhaust port of the first vacuum generator to the hot exhaust pipe, and the first vacuum suction port of the first vacuum generator to the transfer chamber, ensures that the transfer chamber is always kept in a negative pressure state. Even if the hot exhaust pipe fluctuates, it can reduce or even avoid air in the hot exhaust pipe from entering the transfer chamber, thereby preventing residual air in the hot exhaust pipe from entering the growth chamber, ensuring the cleanliness of the growth chamber, and thus improving the quality of the epitaxial process in the growth chamber. Attached Figure Description

[0037] Figure 1 This is a schematic diagram of the structure of the extension device in a specific embodiment of this utility model;

[0038] Figure 2 This is another structural schematic diagram of the extension device in a specific embodiment of this utility model. Detailed Implementation

[0039] The specific embodiments of the epitaxial device provided by this utility model will be described in detail below with reference to the accompanying drawings.

[0040] This specific embodiment provides an epitaxial device. Figure 1 This is a schematic diagram of the extension device in a specific embodiment of this utility model. For example... Figure 1 As shown, the epitaxial device includes a growth chamber, a transfer chamber 11, a loading chamber 10, and a gas balancing structure. The transfer chamber 11 is located between the growth chamber and the loading chamber 10. The gas balancing structure includes:

[0041] First gas source 33;

[0042] Heat exhaust duct 12;

[0043] The first vacuum generator 13 includes a first air inlet, a first exhaust outlet and a first vacuum suction inlet. The first air inlet is connected to the first air source 33, the first exhaust outlet is connected to the hot exhaust pipe 12, and the first vacuum suction inlet is connected to the transmission chamber 11.

[0044] Specifically, the epitaxial apparatus includes a growth chamber for performing epitaxial growth processes, a loading chamber 10 for receiving wafers from the outside, and a transfer chamber 11 for transferring the wafers from the loading chamber 10 to the growth chamber. The heat exhaust duct 12 is connected to the outside and is used to exhaust gases from the transfer chamber 11 and the loading chamber 10. This specific embodiment involves setting up a first vacuum generator 13, with its first air inlet connected to the first gas source 33, its first exhaust port connected to the hot exhaust pipe 12, and its first vacuum suction port connected to the transmission chamber 11. When compressed gas from the first gas source 33 enters the first vacuum generator 33 through the first air inlet and exits through the first exhaust port, a negative pressure is generated at the first vacuum suction port between the first air inlet and the first exhaust port. This maintains a stable negative pressure within the transmission chamber 11 and prevents backflow of air or other gases from the hot exhaust pipe 12 into the transmission chamber 11. Even if fluctuations occur in the hot exhaust pipe, the entry of air from the hot exhaust pipe 12 into the transmission chamber 11 is reduced or even avoided, thus preventing residual air from the hot exhaust pipe from entering the growth chamber. This ensures the cleanliness of the growth chamber and improves the quality of the epitaxial process within the growth chamber. In this specific embodiment, the negative pressure refers to a gas pressure state below atmospheric pressure (i.e., standard atmospheric pressure).

[0045] In some embodiments, the gas balance structure further includes:

[0046] The exhaust pipe 18 is connected to the first vacuum inlet of the first vacuum generator 13;

[0047] The first exhaust branch pipe 17 is connected at one end to the transmission chamber 11 and at the other end to the exhaust main pipe 18;

[0048] The second exhaust branch pipe 16 is connected at one end to the loading chamber 10 and at the other end to the exhaust main pipe 18.

[0049] Specifically, the transmission chamber 11 is connected to the first vacuum inlet of the first vacuum generator 13 via the first exhaust branch pipe 17 and the exhaust main pipe 18, and the loading chamber 10 is also connected to the first vacuum inlet of the first vacuum generator 13 via the second exhaust branch pipe 16 and the exhaust main pipe 18. By using the same first vacuum generator 13 to connect the transmission chamber 11 and the loading chamber 10, not only can the negative pressure environment of the transmission chamber 11 and the loading chamber 10 be maintained simultaneously, but backflow of air or other gases from the hot exhaust pipe 12 into the transmission chamber 11 and the loading chamber 10 can also be prevented. Moreover, connecting the transmission chamber 11 and the loading chamber 10 via the same first vacuum generator 13 helps simplify the control operation of the gas balance structure and reduces the cost of the epitaxial device.

[0050] To flexibly adjust the pressure within the transmission chamber 11 and the loading chamber 10, in some embodiments, the gas balancing structure further includes:

[0051] The first air inlet pipe 35 has one end connected to the first air source 33 and the other end connected to the first air inlet of the first vacuum generator 13.

[0052] The first flow control valve 14 is installed in the first air inlet pipe 35. The first flow control valve 14 is used to adjust the flow rate of the gas transmitted from the first gas source 33 to the first vacuum generator 13.

[0053] In some embodiments, the gas balance structure further includes:

[0054] The first negative pressure sensor 15 is installed in the exhaust pipe 18;

[0055] The first flow control valve 14 is connected to the first negative pressure sensor 15 and is used to automatically adjust the flow rate of the gas transmitted from the first gas source 33 to the first vacuum generator 13 according to the pressure value detected by the first negative pressure sensor 15.

[0056] Specifically, the first negative pressure sensor 15 is installed in the exhaust main pipe 18, and the exhaust main pipe 18 is connected to the transmission chamber 11 through the first exhaust branch pipe 17 and to the loading chamber 10 through the second exhaust branch pipe 16. Therefore, the first negative pressure sensor 15 can detect the gas pressure in the transmission chamber 11 and the loading chamber 10. The first flow control valve 14 is connected to the first negative pressure sensor 15, so that the flow rate of the gas transmitted from the first gas source 33 to the first vacuum generator 13 can be automatically adjusted through the synergistic action of the first flow control valve 14 and the first negative pressure sensor 15, so that the transmission chamber 11 and the loading chamber 10 are maintained within a stable negative pressure range, further ensuring the smooth progress of the epitaxial process and helping to improve the automation level of the gas leveling structure. For example, when the pressure value detected by the first negative pressure sensor 15 is too high (e.g., positive pressure), the first negative pressure sensor 15 transmits the detected pressure value to the first flow control valve 14. The first flow control valve 14 then increases the flow rate of the gas transmitted from the first gas source 33 to the first vacuum generator 13 according to the pressure value fed back by the first negative pressure sensor 15, so as to increase the negative pressure at the first vacuum inlet in the first vacuum generator 13, thereby reducing the pressure in the transmission chamber 11 and the loading chamber 10, and keeping the transmission chamber 11 and the loading chamber 10 within a stable negative pressure range.

[0057] In some embodiments, the loading chamber 10 includes a loading air inlet and a loading air outlet, the transfer chamber 11 includes a transfer air inlet and a transfer air outlet, the first exhaust branch pipe 17 is connected to the transfer air outlet, and the second exhaust branch pipe 16 is connected to the loading air outlet; the extension device further includes:

[0058] The second air source 34 is connected to the loading air inlet and the transmission air inlet, and the second air source 34 is used to purge the loading chamber 10 and the transmission chamber 11 with gas.

[0059] In some embodiments, the first gas source 33 and the second gas source 34 use the same type of gas.

[0060] In some embodiments, both the first gas source 33 and the second gas source 34 are nitrogen gas sources.

[0061] For example, the gas balance structure further includes a second gas source 34, a purge main pipe 36 for transmitting the second gas source 34, and a first purge branch pipe, a second purge branch pipe, a third purge branch pipe, and a fourth purge branch pipe, all of which are connected to the purge main pipe 36. The second gas source 34 is used to store purge gas. One end of the first purge branch pipe is connected to the purge main pipe 36, and the other end is connected to the loading inlet of the loading chamber 10. One end of the second purge branch pipe is connected to the purge main pipe 36, and the other end is connected to the loading inlet of the loading chamber 10. One end of the third purge branch pipe is connected to the purge main pipe 36, and the other end is connected to the transmission inlet of the transmission chamber 11. One end of the fourth purge branch pipe is connected to the purge main pipe 36, and the other end is connected to the transmission inlet of the transmission chamber 11. The first purge branch pipe is further provided with a first normally closed valve 32 and a first pressure regulating valve 31, with the first pressure regulating valve 31 located between the first normally closed valve 32 and the loading chamber 10. The second purge branch pipe is further provided with a first normally open valve 30. The third purge branch pipe is further provided with a second normally closed valve 29 and a second pressure regulating valve 25, with the second pressure regulating valve 25 located between the second normally closed valve 29 and the transmission chamber 11. The fourth purge branch pipe is further provided with a second normally open valve 27. The gas balance structure also includes a third vacuum generator 28, the inlet of which is connected to the purge main pipe 36, the outlet of which is connected to the first exhaust branch pipe 17, and the vacuum suction port of which is connected to the transmission chamber 11, for adjusting the negative pressure environment in the transmission chamber 11 when needed. In one example, the gas balance structure also includes a third normally closed valve 26 located between the vacuum inlet of the third vacuum generator 28 and the transmission chamber 11.

[0062] In one example, the gas balance structure further includes a fourth normally open valve 23 located in the first exhaust branch pipe 17 and a fifth normally open valve 21 located in the second exhaust branch pipe 16.

[0063] In another example, the gas balancing structure further includes a third exhaust branch pipe and a fourth exhaust branch pipe. One end of the third exhaust branch pipe is connected to the transmission exhaust port of the transmission chamber 11, and the other end is connected to the exhaust main pipe 18. One end of the fourth exhaust branch pipe is connected to the loading exhaust port of the loading chamber 10, and the other end is connected to the exhaust main pipe 18. The gas balancing structure also includes a fourth normally closed valve 22 and a fourth pressure regulating valve 24 located in the third exhaust branch pipe, with the fourth pressure regulating valve located on the side of the fourth normally closed valve 22 away from the transmission chamber 11. The gas balancing structure also includes a fifth normally closed valve 19 and a fifth pressure regulating valve 20 located in the fourth exhaust branch pipe, with the fifth pressure regulating valve 20 located on the side of the fifth normally closed valve 19 away from the loading chamber 10.

[0064] Figure 2 This is another structural schematic diagram of the extension device in a specific embodiment of this utility model. In other embodiments, such as... Figure 2 As shown, the gas balance structure further includes:

[0065] The second vacuum generator 42 includes a second air inlet, a second exhaust outlet, and a second vacuum suction inlet. The second air inlet is connected to the first air source 33, the second exhaust outlet is connected to the hot exhaust pipe 12, and the second vacuum suction inlet is connected to the loading chamber 10.

[0066] In some embodiments, the gas balance structure further includes:

[0067] The first air inlet pipe 35 is connected at one end to the first air source 33 and at the other end to the first air inlet of the first vacuum generator 13.

[0068] The second air inlet pipe 45 is connected at one end to the first air source 33 and at the other end to the second air inlet of the second vacuum generator 42;

[0069] The first flow control valve 14 is installed in the first air inlet pipe 35. The first flow control valve 14 is used to adjust the flow rate of the gas transmitted from the first gas source 33 to the first vacuum generator 13.

[0070] The second flow control valve 44 is installed in the second air inlet pipe 45. The second flow control valve 44 is used to adjust the flow rate of the gas transmitted from the first gas source 33 to the second vacuum generator 42.

[0071] In some embodiments, the gas balance structure further includes:

[0072] The second negative pressure sensor 41 is connected to the transmission chamber 11;

[0073] The third negative pressure sensor 40 is connected to the loading chamber 10;

[0074] The first flow control valve 14 is connected to the second negative pressure sensor 41 and is used to automatically adjust the flow rate of the gas transmitted from the first gas source 33 to the first vacuum generator 13 according to the pressure value detected by the second negative pressure sensor 41.

[0075] The second flow control valve 44 is connected to the third negative pressure sensor 40 and is used to automatically adjust the flow rate of the gas transmitted from the first gas source 33 to the second vacuum generator 42 according to the pressure value detected by the third negative pressure sensor 40.

[0076] Specifically, by setting the first vacuum generator 13 and the second vacuum generator 42, the negative pressure environment in the transmission chamber 11 and the loading chamber 10 can be adjusted respectively, thereby improving the flexibility of the gas balancing structure in adjusting the pressure balance. The second negative pressure sensor 41 can detect the gas pressure in the transmission chamber 11. The first flow control valve 14 is connected to the second negative pressure sensor 41, so that through the synergistic action of the first flow control valve 14 and the second negative pressure sensor 41, the flow rate of the gas transmitted from the first gas source 33 to the first vacuum generator 13 can be automatically adjusted, so that the transmission chamber 11 is maintained within a stable negative pressure range, further ensuring the smooth progress of the epitaxial process and helping to improve the automation level of the gas leveling structure. The third negative pressure sensor 40 can detect the gas pressure in the loading chamber 10. The second flow control valve 44 is connected to the third negative pressure sensor 40, so that the flow rate of the gas transmitted from the first gas source 33 to the second vacuum generator 42 can be automatically adjusted through the synergistic effect of the second flow control valve 44 and the third negative pressure sensor 40, so that the loading chamber 10 is maintained within a stable negative pressure range, further ensuring the smooth progress of the epitaxial process, and helping to improve the automation level of the gas leveling structure.

[0077] The epitaxial device provided in this specific embodiment, by setting a gas balance structure including a first gas source, a hot exhaust pipe, and a first vacuum generator, and by connecting the first air inlet of the first vacuum generator to the first gas source, the first exhaust port of the first vacuum generator to the hot exhaust pipe, and the first vacuum suction port of the first vacuum generator to the transfer chamber, ensures that the transfer chamber is always kept in a negative pressure state. Even if the hot exhaust pipe fluctuates, it can reduce or even avoid air from the hot exhaust pipe entering the transfer chamber, thereby preventing residual air from the hot exhaust pipe from entering the growth chamber, ensuring the cleanliness of the growth chamber, and thus improving the quality of the epitaxial process in the growth chamber.

[0078] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several improvements and modifications can be made without departing from the principle of the present utility model, and these improvements and modifications should also be considered within the protection scope of the present utility model.

Claims

1. An epitaxial device, characterized in that, It includes a growth chamber, a transport chamber, a loading chamber, and a gas balancing structure, wherein the transport chamber is located between the growth chamber and the loading chamber; wherein the gas balancing structure includes: First gas source; Heat exhaust duct; The first vacuum generator includes a first air inlet, a first exhaust outlet, and a first vacuum suction inlet. The first air inlet is connected to the first air source, the first exhaust outlet is connected to the hot exhaust pipe, and the first vacuum suction inlet is connected to the transmission chamber.

2. The epitaxial device according to claim 1, characterized in that, The gas balance structure also includes: The exhaust pipe is connected to the first vacuum inlet of the first vacuum generator; The first exhaust branch pipe has one end connected to the transmission chamber and the other end connected to the exhaust main pipe; The second exhaust branch pipe is connected at one end to the loading chamber and at the other end to the exhaust main pipe.

3. The epitaxial device according to claim 2, characterized in that, The gas balance structure also includes: The first air inlet pipe has one end connected to the first air source and the other end connected to the first air inlet of the first vacuum generator; A first flow control valve is installed in the first air inlet pipe. The first flow control valve is used to adjust the flow rate of the gas transmitted from the first gas source to the first vacuum generator.

4. The epitaxial device according to claim 3, characterized in that, The gas balance structure also includes: The first negative pressure sensor is installed in the exhaust pipe; The first flow control valve is connected to the first negative pressure sensor and is used to automatically adjust the flow rate of the gas transmitted from the first gas source to the first vacuum generator according to the pressure value detected by the first negative pressure sensor.

5. The epitaxial device according to claim 2, characterized in that, The loading chamber includes a loading air inlet and a loading air outlet; the transfer chamber includes a transfer air inlet and a transfer air outlet; the first exhaust branch pipe is connected to the transfer air outlet; and the second exhaust branch pipe is connected to the loading air outlet. The extension device further includes: The second gas source is connected to the loading air inlet and the transmission air inlet, and is used to purge the loading chamber and the transmission chamber with gas.

6. The epitaxial device according to claim 5, characterized in that, The first gas source and the second gas source use the same type of gas.

7. The epitaxial device according to claim 6, characterized in that, Both the first gas source and the second gas source are nitrogen gas sources.

8. The epitaxial device according to claim 1, characterized in that, The gas balance structure also includes: The second vacuum generator includes a second air inlet, a second exhaust outlet, and a second vacuum suction inlet. The second air inlet is connected to the first air source, the second exhaust outlet is connected to the hot exhaust pipe, and the second vacuum suction inlet is connected to the loading chamber.

9. The epitaxial apparatus according to claim 8, characterized in that, The gas balance structure also includes: The first air inlet pipe has one end connected to the first air source and the other end connected to the first air inlet of the first vacuum generator; The second air inlet pipe has one end connected to the first air source and the other end connected to the second air inlet of the second vacuum generator; A first flow control valve is installed in the first air inlet pipe. The first flow control valve is used to adjust the flow rate of the gas transmitted from the first gas source to the first vacuum generator. The second flow control valve is installed in the second air inlet pipe. The second flow control valve is used to adjust the flow rate of the gas transmitted from the first gas source to the second vacuum generator.

10. The epitaxial apparatus according to claim 9, characterized in that, The gas balance structure also includes: The second negative pressure sensor is connected to the transmission chamber; The third negative pressure sensor is connected to the loading chamber; The second flow control valve is connected to the second negative pressure sensor and is used to automatically adjust the flow rate of the gas transmitted from the first gas source to the first vacuum generator according to the pressure value detected by the second negative pressure sensor. The second flow control valve is connected to the third negative pressure sensor and is used to automatically adjust the flow rate of the gas transmitted from the first gas source to the second vacuum generator according to the pressure value detected by the third negative pressure sensor.

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