Thermal management system of semiconductor processing workshop

Abstract

The utility model discloses a thermal management system of a semiconductor processing workshop, which comprises a tail gas emission module, a first heat exchange module and a fluid supply module, the tail gas emission module comprises a tail gas emission pipeline, and the fluid supply module comprises a fluid supply pipeline. The fluid supply pipeline is at least used for being connected with a reactor in the semiconductor processing workshop, and the tail exhaust pipeline and the fluid supply pipeline are both connected with the first heat exchange module so that heat exchange can be conducted through the first heat exchange module. According to the scheme, tail gas heat can be used for preheating the reactor, waste of the tail gas heat can be reduced, and follow-up tail gas treatment can be facilitated.

Description

Technical Field

[0001] This utility model relates to the field of semiconductor processing technology, and specifically to a thermal management system for a semiconductor processing workshop. Background Technology

[0002] Semiconductor processing workshops, such as coating workshops, typically have one or more reactors. These reactors, along with the containers that move in and out, continuously release heat into the air, resulting in relatively high temperatures within the workshop. Currently, semiconductor processing workshops are generally equipped with exhaust systems. These systems use vents and exhaust fans installed in the workshop walls to expel the hot gases, thereby controlling the temperature inside the workshop. Utility Model Content

[0003] The purpose of this invention is to provide a thermal management system for a semiconductor processing workshop, which can utilize the heat of exhaust gas to preheat the reactor, thereby reducing the waste of exhaust gas heat and facilitating subsequent exhaust gas treatment.

[0004] To solve the above-mentioned technical problems, this utility model provides a thermal management system for a semiconductor processing workshop, including an exhaust gas emission module, a first heat exchange module, and a fluid supply module. The exhaust gas emission module includes an exhaust pipe, and the fluid supply module includes a fluid supply pipe. The fluid supply pipe is at least connected to a reactor in the semiconductor processing workshop. Both the exhaust pipe and the fluid supply pipe are connected to the first heat exchange module for heat exchange.

[0005] In the above scheme, the thermal management system also includes a fluid supply module and a first heat exchange module. The fluid supplied by the fluid supply module can exchange heat with the exhaust gas from the exhaust gas emission module in the first heat exchange module, allowing the fluid to have a relatively high temperature. This fluid is then introduced into the reactor to preheat the reaction chamber within the reactor. In this way, on the one hand, the heat from the exhaust gas can be fully recovered, reducing waste and facilitating subsequent exhaust gas treatment, thus lowering treatment costs. On the other hand, it can save or even eliminate the need for other heat sources (such as vacuum radiation heating) that would otherwise be required for reactor preheating, further reducing energy consumption and lowering semiconductor processing costs.

[0006] Optionally, the semiconductor processing workshop is equipped with a plurality of reactors, and the fluid supply pipeline is configured with a plurality of first supply outlets, the number of the first supply outlets being consistent with the number of reactors, and each of the first supply outlets being connected to each of the reactors in a one-to-one correspondence.

[0007] Optionally, the fluid supply pipeline is used to supply preheated gas or preheated liquid, and the preheated gas is used to fill the reactor.

[0008] Optionally, a second heat exchange module is also included; in the flow direction of the fluid in the fluid supply pipe, the second heat exchange module is located downstream of the first heat exchange module, and the second heat exchange module is also used to exchange heat with the fluid in the fluid supply pipe.

[0009] Optionally, it further includes a first temperature detection component and a second temperature detection component, both of which are connected to the fluid supply pipe and are used to detect the temperature of the fluid in the fluid supply pipe; in the flow direction of the fluid in the fluid supply pipe, the first temperature detection component is located upstream of the second heat exchange module and the second temperature detection component is located downstream of the second heat exchange module.

[0010] Optionally, the reactor may also include a third heat exchange module, which is installed in the reactor to exchange heat inside the reactor.

[0011] Optionally, the third heat exchange module is a vacuum radiation heat exchange component.

[0012] Optionally, the semiconductor processing workshop includes a process chamber and a buffer chamber. The reactor is disposed in the process chamber, and a buffer rack is disposed in the buffer chamber. The buffer rack includes a first rack and a second rack. The first rack is located above the second rack. The first rack is used to hold the carrier to be entered into the reactor, and the second rack is used to hold the carrier leaving the reactor.

[0013] Optionally, the fluid supply pipeline is further configured with a second supply outlet for supplying fluid to the first stand.

[0014] Optionally, the semiconductor processing workshop includes walls, and at least one of the exhaust gas emission module and the first heat exchange module is disposed within the walls. Attached Figure Description

[0015] Figure 1 A simplified structural diagram of a semiconductor processing workshop;

[0016] Figure 2 for Figure 1 A simplified diagram of the internal structure of the intermediate process chamber;

[0017] Figure 3 for Figure 1 A simplified diagram of the internal structure of the intermediate buffer chamber;

[0018] Figure 4A simplified structural diagram of the thermal management system for a semiconductor processing workshop provided in this embodiment of the utility model.

[0019] Figure label:

[0020] 100 - Semiconductor processing workshop; 110 - Process chamber; 120 - Buffer chamber; 130 - Wall; 140 - Reactor; 150 - Buffer rack; 151 - First rack; 152 - Second rack;

[0021] 200 - Exhaust emission module; 210 - Exhaust pipe; 220 - Exhaust fan;

[0022] 300 - First heat exchange module;

[0023] 400 - Fluid supply module; 410 - Fluid supply pipeline; 411 - First supply outlet; 420 - First temperature detection component; 430 - Second temperature detection component;

[0024] 500 - Second heat exchange module;

[0025] 600 - Third heat exchange module. Detailed Implementation

[0026] To enable those skilled in the art to better understand the technical solution of this utility model, the present utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0027] In the description of the embodiments of this utility model, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, a feature defined with "first," "second," and "third" may explicitly or implicitly include one or more of that feature.

[0028] In the description of the embodiments of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation", "connection" and "linking" should be interpreted broadly. For example, "linking" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium.

[0029] In the description of the embodiments of this utility model, the term "multiple" refers to two or more. Furthermore, the use of "multiple" to describe the quantity of different components does not indicate a quantitative relationship between these components.

[0030] In the description of embodiments of this utility model, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes that element.

[0031] Please refer to Figures 1-4 , Figure 1 A simplified structural diagram of a semiconductor processing workshop; Figure 2 for Figure 1 A simplified diagram of the internal structure of the intermediate process chamber; Figure 3 for Figure 1 A simplified diagram of the internal structure of the intermediate buffer chamber; Figure 4 A simplified structural diagram of the thermal management system for a semiconductor processing workshop provided in this embodiment of the utility model.

[0032] like Figures 1-3 As shown, the semiconductor processing workshop 100 may include multiple walls 130, which can be interconnected to enclose and form the external structure of the semiconductor processing workshop 100. The interior of the semiconductor processing workshop 100 may include a process chamber 110 and a buffer chamber 120.

[0033] A reactor 140 is installed within the process chamber 110. This reactor 140 can be a tubular structure or similar, and its interior forms a reaction chamber. The reaction chamber provides a reaction site for processing substrates such as silicon wafers. The specific process type within the reaction chamber can be atomic layer deposition (ALD), chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), plasma-enhanced atomic layer deposition (PEALD), etc., and is not limited here.

[0034] In practical applications, carriers can be configured, such as graphite boats or quartz boats. These carriers can have planks for supporting and securing the substrate. The substrate can move in and out of the reaction chamber along with the carrier, facilitating batch processing of the substrate. In some implementations, only one carrier can be accommodated within a single reaction chamber. In other implementations, multiple carriers, such as two carriers, can be accommodated simultaneously within a single reaction chamber, thereby improving the production efficiency of film deposition.

[0035] The buffer chamber 120 can be adjacent to the process chamber 110. A buffer rack 150 can be installed in the buffer chamber 120. The buffer rack 150 is used to hold the carriers, including the carriers to enter the reaction chamber and the carriers to leave the reaction chamber.

[0036] The buffer chamber 120 and the process chamber 110 are not isolated to facilitate the transfer of the carrier between the reaction chamber and the buffer frame 150.

[0037] As described in the background section, during actual production, the reactor 140 and the carriers entering and exiting the reactor 140 continuously release heat into the air, resulting in relatively high temperatures within the process chamber 110 and the buffer chamber 120. Currently, semiconductor processing workshops are generally equipped with exhaust systems, which can directly discharge high-temperature gases from the workshop as exhaust gas to control the temperature within the workshop. However, this method leads to heat waste and increases the difficulty of exhaust gas treatment, resulting in higher treatment costs.

[0038] To address this, this utility model embodiment provides a thermal management system for a semiconductor processing workshop 100, which can be specifically combined with... Figure 4 The thermal management system includes an exhaust gas emission module 200, a first heat exchange module 300, and a fluid supply module 400.

[0039] The exhaust gas emission module 200 includes an exhaust pipe 210 for drawing out high-temperature gases from the semiconductor processing workshop 100 as exhaust gases. The general flow direction of the exhaust gases can be referenced... Figures 1-3 As shown by the hollow arrow in the diagram. In practice, the exhaust emission module 200 may further include an exhaust fan 220, which can be connected to the exhaust pipe 210 to provide power for the exhaust gas extraction. The number of exhaust fans 220 can be one or more, depending on factors such as the size of the semiconductor processing workshop 100, and is not explicitly limited in this embodiment.

[0040] The fluid supply module 400 includes a fluid source (not shown) and a fluid supply pipe 410. The fluid source can be connected to the fluid supply pipe 410 to supply fluid to the fluid supply pipe 410. Both the exhaust pipe 210 and the fluid supply pipe 410 are connected to the first heat exchange module 300 for heat exchange, thereby utilizing the heat in the exhaust gas to heat the fluid supplied by the fluid supply pipe 410.

[0041] Fluid supply conduit 410 is at least connected to reactor 140 in semiconductor processing workshop 100 for supplying fluid to reactor 140. The direction of fluid flow can be referenced. Figures 1-3 As shown by the solid arrow in the diagram. Since the fluid has already exchanged heat with the exhaust gas in the first heat exchange module 300, the fluid can have a relatively high temperature. Passing this fluid into the reactor 140 can preheat the reaction chamber within the reactor 140. In this way, on the one hand, the heat from the exhaust gas can be fully recovered to reduce heat waste and facilitate subsequent exhaust gas treatment, thereby reducing exhaust gas treatment costs; on the other hand, it can save or even eliminate other heat that would otherwise be needed to preheat the reactor 140 (such as vacuum radiation heating), and also reduce energy consumption, thereby reducing the cost of semiconductor processing.

[0042] Here, the present invention does not limit the type of fluid supplied by the fluid supply pipe 410. In practical applications, those skilled in the art can select according to specific needs, as long as it can meet the requirements of use.

[0043] In some implementations, the fluid supplied by the fluid supply pipe 410 can be a preheated gas. This preheated gas can be directly introduced into the reaction chamber as a heat transfer medium. This allows for faster preheating of the reaction chamber, significantly shortening the preheating time and improving preheating efficiency. It also facilitates uniform preheating of different areas within the reaction chamber, thus improving process uniformity.

[0044] The aforementioned preheating gas can be nitrogen or an inert gas, etc. Taking nitrogen as an example, after passing through the first heat exchange module 300, the temperature of nitrogen can be raised to between 80°C and 100°C. When it is introduced into the reaction chamber for preheating, compared with the traditional vacuum radiation preheating process, the preheating time can be shortened by approximately 30 to 60 seconds, thereby shortening the semiconductor processing time and improving semiconductor processing efficiency.

[0045] In other implementations, the fluid supplied by the fluid supply pipe 410 can also be a preheated liquid, such as water. In this case, a preheating pipe can be installed on the shell wall of the reactor 140, and the fluid supply pipe 410 can be connected to this preheating pipe to allow the preheated liquid to be introduced into the preheating pipe, thus achieving indirect heating of the reaction chamber inside the reactor 140. The specific structure and arrangement of the preheating pipe are not limited here.

[0046] Furthermore, this embodiment of the invention does not limit the specific structural form of the first heat exchange module 300. In practical applications, those skilled in the art can determine the form based on the type of fluid supplied by the fluid supply pipe 410. For example, when the fluid supplied by the fluid supply pipe 410 is preheated gas, the first heat exchange module 300 can be a gas-liquid heat exchanger such as a plate heat exchanger, a shell-and-tube heat exchanger, or a spiral plate heat exchanger. As another example, when the fluid supplied by the fluid supply pipe 410 is preheated liquid, the first heat exchange module 300 can be a liquid-liquid heat exchanger such as a partition wall heat exchanger or a fluid-connected indirect heat exchanger.

[0047] In the process chamber 110, there may be one reactor 140. At this time, the fluid supply pipe 410 may be configured with a first supply outlet 411, which may be connected to the reactor 140 to supply fluid to the reactor 140.

[0048] Or, such as Figure 1 and Figure 2 As shown, the number of reactors 140 in the process chamber 110 can also be multiple. In this case, the fluid supply pipe 410 can be configured with multiple first supply outlets 411. The number of first supply outlets 411 can be the same as the number of reactors 140, and each first supply outlet 411 can be connected to each reactor 140 in a one-to-one correspondence so as to supply fluid to each reactor 140 in a one-to-one correspondence.

[0049] In some alternative implementations, the thermal management system provided in this embodiment of the present invention may further include a second heat exchange module 500.

[0050] In the flow direction of the fluid within the fluid supply pipe 410, the second heat exchange module 500 can be located downstream of the first heat exchange module 300, meaning the fluid can flow from the first heat exchange module 300 to the second heat exchange module 500. The second heat exchange module 500 is also used to exchange heat with the fluid within the fluid supply pipe 410 to control the temperature of the fluid, thereby enabling the fluid temperature to better meet the preheating standards of the reaction chamber.

[0051] The aforementioned thermal management system may further include a first temperature detection component 420 and a second temperature detection component 430. The first temperature detection component 420 and the second temperature detection component 430 may be, for example, temperature sensing elements such as resistance temperature detectors (RTDs) or thermocouples. Both the first temperature detection component 420 and the second temperature detection component 430 may be connected to the fluid supply pipe 410 for detecting the temperature of the fluid within the fluid supply pipe 410.

[0052] Combination Figure 4 In the direction of fluid flow within the fluid supply pipe 410, the first temperature detection component 420 can be located upstream of the second heat exchange module 500, and the second temperature detection component 430 can be located downstream of the second heat exchange module 500. That is, the fluid can flow from the first temperature detection component 420 to the second heat exchange module 500 and then to the second temperature detection component 430.

[0053] For ease of description, the temperature value measured by the first temperature detection component 420 can be defined as T1, where T1 represents the temperature of the fluid after heat exchange with the exhaust gas in the first heat exchange module 300. Furthermore, the temperature value measured by the second temperature detection component 430 can be defined as T2, where T2 represents the temperature of the fluid after heat exchange in the second heat exchange module 500. Simultaneously, the preheating temperature set within the reaction chamber of the reactor 140 can be defined as T0.

[0054] In practice, T1 and T0 can be compared first. If the difference between T1 and T0 exceeds a set threshold, it indicates that the fluid cannot meet the preheating requirements of the reaction chamber solely through the heat exchange of the first heat exchange module 300. In this case, the second heat exchange module 500 can be activated to further exchange heat with the fluid and control its temperature, ensuring that the difference between T2 and T0 remains within the set threshold range. Of course, if the difference between T1 and T0 is already within the aforementioned set threshold range, the second heat exchange module 500 may not need to be activated; that is, the second heat exchange module 500 may not be a normally open component to save energy.

[0055] Here, the present invention does not limit the specific range of the above-mentioned threshold values. In practical applications, those skilled in the art can select according to specific needs, as long as the requirements of use are met.

[0056] Furthermore, this embodiment of the invention does not limit the specific type of the second heat exchange module 500. In practical applications, those skilled in the art can select one according to specific needs, as long as it meets the requirements of use. For example, when T1 is usually less than T0, the second heat exchange module 500 can be a heating module, such as an electric heating component or a vacuum radiation heating component, for secondary heating of the fluid. As another example, when T1 is usually greater than T0, the second heat exchange module 500 can also be a cooling module, such as a liquid heat exchange component, for cooling the fluid. It should be understood that liquid heat exchange components can also be used for heating, which is specifically related to the temperature of the liquid medium introduced into the liquid heat exchange component; that is, when using a liquid heat exchange component, it can be adapted to both situations where T1 is less than T0 and situations where T1 is greater than T0, thus having a wider range of applications.

[0057] In some alternative implementations, the thermal management system provided in this embodiment of the present invention may further include a third heat exchange module 600.

[0058] The third heat exchange module 600 can be installed in the reactor 140 to exchange heat inside the reactor 140, enabling faster and more accurate temperature control within the reaction chamber. For example, during the reaction chamber preheating stage, the third heat exchange module 600 can work in conjunction with the fluid supplied by the fluid supply pipe 410 to achieve faster preheating of the reaction chamber. Furthermore, in actual production, the third heat exchange module 600 can also adjust the temperature within the reaction chamber according to the specific process requirements to better meet the demands of the process implementation.

[0059] Here, this embodiment of the present invention does not limit the specific type of the third heat exchange module 600. In practical applications, those skilled in the art can also select one according to specific needs, as long as it can meet the requirements of use. For example, the third heat exchange module 600 can be a vacuum radiation heat exchange component, an electric heating component, etc.

[0060] In some alternative implementations, the buffer frame 150 within the buffer chamber 120 may include a first platform 151 and a second platform 152, wherein the first platform 151 may be located above the second platform 152.

[0061] In practical applications, the first stand 151 can be used to hold the carriers to be entered into the reactor 140, i.e., the cold carriers, hereinafter referred to as the first carriers; while the second stand 152 can be used to hold the carriers leaving the reactor 140, i.e., the hot carriers, hereinafter referred to as the second carriers. Figure 3The airflow in the buffer chamber 120 usually flows upward. When passing the second carrier, the airflow can be heated to form a hot airflow. As the hot airflow continues to flow upward, it can preheat the first carrier. In this way, the temperature of the first carrier can be increased. After the first carrier enters the reaction chamber, the temperature disturbance in the reaction chamber is relatively small, and it can enter the production state more quickly, which is conducive to improving production efficiency.

[0062] Both the first platform 151 and the second platform 152 may consist of only one platform, or they may each consist of multiple platforms; no limitation is made here.

[0063] In some alternative implementations, the fluid in the fluid supply pipe 410 can also be supplied to the first platform 151 to preheat the first platform 151 and the first vehicle located on the first platform 151. In this way, there are two ways to preheat the first vehicle: fluid preheating and the aforementioned hot airflow preheating. This can provide a better preheating effect for the first vehicle and is more conducive to ensuring the preheating temperature of the first vehicle.

[0064] In practical applications, the preheating temperature of the first carrier can be between 70°C and 80°C. By preheating the first carrier, the energy consumption of reactor 140 can be reduced by approximately 1.2 kW, and the process preheating time can be further shortened by approximately 30 to 60 seconds.

[0065] When the fluid supplied by the fluid supply pipe 410 is preheating gas, the preheating method for the first platform 151 and the first vehicle located on the first platform 151 can be direct blowing. That is, a second supply outlet (not shown in the figure) can be provided in the fluid supply pipe 410, and the second supply outlet can be set towards the first platform 151 so that the preheating gas leaving the second supply outlet can directly heat the first platform 151 and the first vehicle. Of course, a dedicated jet pipe or the like can also be provided to guide the preheating gas to a position closer to the first vehicle, thereby achieving better heating of the first vehicle.

[0066] When the fluid supplied by the fluid supply pipe 410 is a preheated liquid, a dedicated preheating pipe needs to be configured to lead the preheated liquid to the first platform 151. The heating of the first vehicle can be indirectly achieved by heating the first platform 151.

[0067] In some alternative implementations, in the thermal management system provided by this utility model embodiment, at least one of the exhaust gas emission module 200 and the first heat exchange module 300 can be installed inside the wall 130 so as to make full use of the wall 130 for installation, thereby reducing the occupation of internal space in the semiconductor processing workshop.

[0068] As for the fluid supply module 400, it may be partially located within the wall 130, or it may be entirely located inside the semiconductor processing workshop. As for the second heat exchange module 500, it may be located within the wall 130, or it may be entirely located inside the semiconductor processing workshop.

[0069] The above are merely preferred embodiments of this utility model. It should be noted that, for those skilled in the art, several improvements and modifications can be made without departing from the principle of this utility model, and these improvements and modifications should also be considered within the scope of protection of this utility model.

Claims

1. A thermal management system for a semiconductor processing workshop, characterized in that, The device includes an exhaust gas emission module, a first heat exchange module, and a fluid supply module. The exhaust gas emission module includes an exhaust pipe, and the fluid supply module includes a fluid supply pipe. The fluid supply pipe is at least connected to a reactor in the semiconductor processing workshop. Both the exhaust pipe and the fluid supply pipe are connected to the first heat exchange module for heat exchange.

2. The thermal management system for a semiconductor processing workshop according to claim 1, characterized in that, The semiconductor processing workshop is equipped with multiple reactors, and the fluid supply pipeline is configured with multiple first supply outlets. The number of first supply outlets is consistent with the number of reactors, and each first supply outlet is connected to each reactor in a one-to-one correspondence.

3. The thermal management system for a semiconductor processing workshop according to claim 1, characterized in that, The fluid supply pipeline is used to supply preheated gas or preheated liquid, and the preheated gas is used to fill the reactor.

4. The thermal management system for a semiconductor processing workshop according to any one of claims 1-3, characterized in that, It also includes a second heat exchange module; In the direction of fluid flow within the fluid supply pipe, the second heat exchange module is located downstream of the first heat exchange module, and the second heat exchange module is also used to exchange heat with the fluid within the fluid supply pipe.

5. The thermal management system for a semiconductor processing workshop according to claim 4, characterized in that, It also includes a first temperature detection component and a second temperature detection component, both of which are connected to the fluid supply pipe and are used to detect the temperature of the fluid in the fluid supply pipe; In the direction of fluid flow within the fluid supply pipe, the first temperature detection component is located upstream of the second heat exchange module, and the second temperature detection component is located downstream of the second heat exchange module.

6. The thermal management system for a semiconductor processing workshop according to any one of claims 1-3, characterized in that, It also includes a third heat exchange module, which is installed in the reactor for heat exchange inside the reactor.

7. The thermal management system for a semiconductor processing workshop according to claim 6, characterized in that, The third heat exchange module is a vacuum radiation heat exchange component.

8. The thermal management system for a semiconductor processing workshop according to any one of claims 1-3, characterized in that, The semiconductor processing workshop includes a process chamber and a buffer chamber. The reactor is located in the process chamber. A buffer rack is provided in the buffer chamber. The buffer rack includes a first rack and a second rack. The first rack is located above the second rack. The first rack is used to hold the carriers to be entered into the reactor, and the second rack is used to hold the carriers leaving the reactor.

9. The thermal management system for a semiconductor processing workshop according to claim 8, characterized in that, The fluid supply pipeline is also equipped with a second supply outlet, which is used to supply fluid to the first stand.

10. The thermal management system for a semiconductor processing workshop according to any one of claims 1-3, characterized in that, The semiconductor processing workshop includes walls, and at least one of the exhaust gas emission module and the first heat exchange module is disposed within the walls.

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