System for removing polycrystalline silicon on surface of bearing piece for particle silicon production

Abstract

The utility model discloses a system for removing polycrystalline silicon on the surface of a bearing part for particle silicon production, which comprises a plurality of stages of reaction units, a plurality of groups of reaction units and a plurality of groups of reaction units, each reaction unit is configured to be capable of accommodating a bearing part of which the surface is attached with polycrystalline silicon; hydrogen chloride gas introduced from the hydrogen chloride gas input port reacts with the polycrystalline silicon in the reaction unit to generate tail gas; the direct discharge valves are arranged corresponding to all stages of reaction units, and the gas inlet end of each direct discharge valve is connected with the tail gas output port of the corresponding stage of reaction unit; the outlet end of the first pipeline is connected with the hydrogen chloride gas input port of the reaction unit of the corresponding stage, and the inlet end of the first pipeline is connected with the tail gas output port of the reaction unit of the previous stage and is positioned at the upstream of the direct discharge valve; the first pipeline is provided with a valve assembly used for controlling on-off of the first pipeline.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of granular silicon production, and particularly relates to a system for removing polysilicon on the surface of a bearing used in granular silicon production. BACKGROUND

[0002] During the production of granular silicon, the bearing may be attached with a large amount of silicon, which seriously affects the performance of the bearing and further affects the generation rate and surface morphology of the granular silicon.

[0003] In the related art, the bearing is placed in a corresponding reactor, hydrogen chloride gas is introduced to react with the bearing attached with a large amount of silicon, and trichlorosilane and silicon tetrachloride and a small amount of hydrogen gas are generated (3Si + 10HCL = SiCl4 + 2SiHCl3 + 4H2), so as to achieve the purpose of removing polysilicon. The bearing after desiliconization can be reused, which helps to reduce the cost. At the same time, the trichlorosilane and silicon tetrachloride generated by the reaction re-enter another rectification system for rectification and purification, and after purification, the granular silicon can be reproduced, the unqualified silicon can be collected, and the cost can be further reduced.

[0004] This reaction has a low hydrogen chloride reaction rate. As the reaction proceeds, a large amount of hydrogen chloride gas will be sent to the tail gas treatment device with the tail gas for treatment, which not only wastes hydrogen chloride but also increases the operating load of the waste gas treatment device, increases energy consumption, increases the amount of lime milk used, and increases the amount of sewage produced.

[0005] The information disclosed in this BACKGROUND section is only for the purpose of increasing the understanding of the background of the present utility model and should not be regarded as an acknowledgment or any form of suggestion that it forms prior art that is publicly known. CONTENT OF THE UTILITY MODEL

[0006] The utility model aims at solving the technical problems of the prior art and provides a system for removing polysilicon on the surface of a bearing used in granular silicon production.

[0007] To solve the above technical problems, the utility model discloses a system for removing polysilicon on the surface of a bearing used in granular silicon production, which comprises:

[0008] The multistage reaction unit comprises two or more reaction units arranged in sequence, wherein each reaction unit comprises a hydrogen chloride gas input port and a tail gas output port; each reaction unit is configured to accommodate a bearing with polysilicon attached to the surface; hydrogen chloride gas introduced from the hydrogen chloride gas input port reacts with the polysilicon in the reaction unit to generate tail gas;

[0009] A direct discharge valve corresponding to each of the reaction units, an inlet end of each of the direct discharge valves being connected to a tail gas outlet port of a corresponding reaction unit;

[0010] and a first pipeline corresponding to each of the reaction units except the first reaction unit, an outlet end of the first pipeline being connected to a hydrogen chloride gas inlet port of a corresponding reaction unit, an inlet end of the first pipeline being connected to a tail gas outlet port of an upper reaction unit and being located upstream of the direct discharge valve, the first pipeline being provided with a valve assembly for controlling opening and closing of the first pipeline.

[0011] In some embodiments, the valve assembly comprises a first valve and a second valve, the first valve being located close to the tail gas outlet port of the upper reaction unit, and a third valve being correspondingly provided between the first pipelines of adjacent two reaction units, one end of the third valve being connected to any one of the first pipelines of the adjacent two reaction units and the connection position being located between the first valve and the second valve on the corresponding first pipeline, the other end of the third valve being connected to the other one of the first pipelines of the adjacent two reaction units and the connection position being located between the first valve and the second valve on the corresponding first pipeline.

[0012] In some embodiments, the hydrogen chloride gas inlet port of each reaction unit is correspondingly connected to a hydrogen chloride gas supply pipeline. The hydrogen chloride gas supply pipeline is used to supply hydrogen chloride gas.

[0013] In some embodiments, the reaction unit comprises a reactor, a gas-gas heat exchanger and a circulating water heat exchanger, the gas-gas heat exchanger comprising a low-temperature gas inlet, a low-temperature gas outlet, a high-temperature gas inlet and a high-temperature gas outlet. The circulating water heat exchanger comprises a gas inlet and a gas outlet. In the same reaction unit, the low-temperature gas outlet of the gas-gas heat exchanger is connected to a bottom end inlet of the reactor, a top end outlet of the reactor is connected to the high-temperature gas inlet of the gas-gas heat exchanger, the high-temperature gas outlet of the gas-gas heat exchanger is connected to the gas inlet of the circulating water heat exchanger, the low-temperature gas inlet of the gas-gas heat exchanger is the hydrogen chloride gas inlet port of the reaction unit, and the gas outlet of the circulating water heat exchanger is the tail gas outlet port of the reaction unit.

[0014] In some embodiments, the first pipeline is further provided with a first filter, the first filter being located between the second valve and the hydrogen chloride gas inlet port of the corresponding reaction unit.

[0015] In some embodiments, the reactor is further connected to an electric heater.

[0016] In some embodiments, a reaction tail gas treatment device is included, and the other end of the direct discharge valve is connected in parallel to the reaction tail gas treatment device.

[0017] In some embodiments, the reaction tail gas treatment device comprises a liquid collector, a second filter, a pipeline cooler, a gas-liquid separation tank, a waste gas treatment device and a rectification device. The other end of the direct discharge valve is connected to the top gas inlet of the liquid collector in parallel, and the liquid collector, the second filter, the pipeline cooler and the gas-liquid separation tank are connected in sequence. The top gas outlet of the gas-liquid separation tank is connected to the waste gas treatment device. The bottom liquid outlet of the gas-liquid separation tank is connected to the rectification device through a pipeline.

[0018] In some embodiments, the bottom liquid outlet of the liquid collector and the bottom liquid outlet of the second filter are connected to the bottom liquid inlet of the gas-liquid separation tank in parallel.

[0019] In some embodiments, a liquid delivery pump is further arranged on the pipeline connecting the bottom liquid outlet of the gas-liquid separation tank and the rectification device.

[0020] Advantages:

[0021] 1. The utility model discloses a multistage reaction unit design, in each reaction unit, hydrogen chloride gas and the load of a large number of silicon adhesion are reacted under the condition of temperature rise, and three chlorosilane, silicon tetrachloride and a small amount of hydrogen (chemical reaction formula is: 3Si + 10HCL = SiCl4 + 2SiHCl3 + 4H2) are generated, so that the removal of silicon is realized, and the utilization rate of hydrogen chloride is effectively improved by transporting the hydrogen chloride-containing tail gas generated in each reaction unit to the next stage reaction unit to participate in the silicon removal reaction, which can reduce the use amount of hydrogen chloride and reduce the cost.

[0022] 2. The utility model discloses a valve assembly and the arrangement of the third valve, can realize the series connection between multiple reaction units of any order according to actual production demand, can improve production efficiency and reduce the consumption of hydrogen chloride.

[0023] 3. By setting the first filter on the upstream of the hydrogen chloride gas input port, the problem of blocking the gas-gas heat exchanger of the reaction unit caused by the inflow of silicon powder or hydrolyzate can be avoided.

[0024] 4. The reaction unit of the utility model utilizes the tail gas generated by reaction to exchange heat with hydrogen chloride gas and circulating water, so that the hydrogen chloride gas and the circulating water are warmed, waste heat recovery is realized, and energy consumption is reduced.

[0025] 5. The utility model sends the tail gas in the last stage reaction unit actually participating in the reaction to the waste gas treatment device, and the waste gas treatment device recycles chlorosilane in the tail gas. The recycled chlorosilane can be used to produce granular silicon.

[0026] 6. The utility model reduces the content of acid gas in the tail gas discharged into the waste gas treatment device, reduces the lime milk consumption of the waste gas treatment device and the sewage discharge amount. BRIEF DESCRIPTION OF DRAWINGS

[0027] The above and / or other aspects of the present application will become more apparent by describing in detail the embodiments thereof with reference to the attached drawings, in which:

[0028] Figure 1 A structural schematic diagram of a system for removing polycrystalline silicon on the surface of a carrier for granular silicon production is provided for an embodiment of the present application.

[0029] Figure 2 For Figure 1 A structural schematic diagram of the system when three reaction units are sequentially connected in series.

[0030] The reference signs are as follows: 1, reaction unit; 11, hydrogen chloride gas input port; 12, tail gas output port; 13, reactor; 14, gas-gas heat exchanger; 15, circulating water heat exchanger; 23, first filter; 16, electric heater; 2, first pipeline; 21, first valve; 22, second valve; 3, direct discharge valve; 4, third valve; 5, hydrogen chloride gas supply pipeline; 61, liquid collector; 62, second filter; 63, pipeline cooler; 64, gas-liquid separation tank; 65, waste gas treatment device; 66, rectification device; 67, liquid delivery pump. DETAILED DESCRIPTION

[0031] Embodiment 1

[0032] During the production of granular silicon, the carrier can be attached with a large amount of silicon, which seriously affects the performance of the carrier. The related art uses a single reactor for treatment, and the specific process is as follows: the carrier is placed in the reactor, and the carrier with a large amount of silicon attached is reacted with hydrogen chloride gas to generate trichlorosilane, silicon tetrachloride, and a small amount of hydrogen (3Si + 10HCL = SiCl4 + 2SiHCl3 + 4H2), thereby achieving the purpose of removing polycrystalline silicon. However, in this reaction, the hydrogen chloride reaction rate is low, and as the reaction proceeds, a large amount of hydrogen chloride gas will be transported to the tail gas treatment device for treatment with the tail gas, resulting in a large amount of hydrogen chloride gas waste and high cost of tail gas treatment.

[0033] To reduce the loss of hydrogen chloride in the tail gas venting and reduce the operating load of the waste gas treatment device, referring to Figure 1 The present application provides a system for removing polycrystalline silicon on the surface of a carrier for granular silicon production, which comprises a multi-stage reaction unit, a direct discharge valve 3, and a first pipeline 2.

[0034] Referring to Figure 1The multi-stage reaction unit comprises two or more reaction units 1 arranged in sequence. Each reaction unit 1 comprises a hydrogen chloride gas input port 11 and a tail gas output port 12. Each reaction unit 1 is configured to accommodate a carrier with polycrystalline silicon attached to the surface. Hydrogen chloride gas input from the hydrogen chloride gas input port 11 reacts with the polycrystalline silicon in the reaction unit 1 to generate tail gas.

[0035] Referring to Figure 1 The direct discharge valve 3 is arranged corresponding to each reaction unit 1. The gas inlet end of each direct discharge valve 3 is connected to the tail gas output port 12 of the corresponding reaction unit 1.

[0036] Referring to Figure 1 The first pipeline 2 is arranged corresponding to each reaction unit 1 except the first reaction unit 1. The outlet end of the first pipeline 2 is connected to the hydrogen chloride gas input port 11 of the corresponding reaction unit 1, and the inlet end is connected to the tail gas output port 12 of the upper reaction unit 1 and is located upstream of the direct discharge valve 3. The first pipeline 2 is provided with a valve assembly for controlling the opening and closing of the first pipeline 2.

[0037] The utility model discloses a multi-stage reaction unit, and each reaction unit 1 is placed with the carrier for granular silicon production with polycrystalline silicon attached to the surface. Hydrogen chloride gas input into the reaction unit 1 is reacted with the carrier with polycrystalline silicon attached to the surface to generate trichlorosilane, silicon tetrachloride and hydrogen tail gas, so as to achieve the purpose of removing polycrystalline silicon. The corresponding chemical reaction formula of the above reaction is: 3Si+10HCL=SiCl4+2SiHCl3+4H2. The tail gas containing hydrogen chloride after the reaction of each reaction unit 1 can be sent to the next stage reaction unit to participate in the reaction, so that the utilization rate of hydrogen chloride is improved, and the amount of hydrogen chloride used is reduced. By controlling the state of the direct discharge valve 3 and the valve assembly on the first pipeline 2, the number of actually used reaction units 1 can be selected according to the actual production needs. Specifically, for the direct discharge valve 3, only the direct discharge valve 3 of the last stage reaction unit actually used is in the conducting state, and the direct discharge valves 3 of any stage reaction units upstream thereof are in the off state, so as to realize the sequential connection between the actually used multiple reaction units.

[0038] In some embodiments, referring to Figure 1 The valve assembly comprises a first valve 21 and a second valve 22, and the first valve 21 is located close to the tail gas output port 12 of the upper reaction unit 1. A third valve 4 is also arranged corresponding to the first pipeline 2 between adjacent two stages. One end of the third valve 4 is connected to any one of the first pipeline 2 between adjacent two stages and the connection position is between the first valve 21 and the second valve 22 on the corresponding first pipeline 2. The other end of the third valve 4 is connected to the other one of the first pipeline 2 between adjacent two stages and the connection position is between the first valve 21 and the second valve 22 on the corresponding first pipeline 2.

[0039] The valve assembly and the third valve 4 can be arranged to realize the series connection between the multiple reaction units of any order.

[0040] In combination Figure 2 as shown, Figure 2 The system shown in the figure includes three reaction units 1. By turning off the third valve 4 and the straight-through valves 3 corresponding to the first two reaction units 1, and turning on the valve assembly and the last reaction unit 1, the series connection between the three reaction units in the figure can be realized. Figure 2 In combination

[0041] In combination Figure 1 As shown, the second valve 22 connected to the first pipeline 2 between the first two reaction units 1 can also be turned off, the first valve 21 is turned on, the third valve 4 is turned on, and the first pipeline 2 connected between the last two reaction units 1 is turned on, realizing the series connection between the first and third reaction units in the figure, and at this time, the second reaction unit does not work.

[0042] In some embodiments, referring to Figure 1 Each hydrogen chloride gas input port 11 of each reaction unit 1 is also connected to a corresponding hydrogen chloride gas supply pipeline 5, which is used to supply hydrogen chloride gas to adapt to the series connection between multiple reaction units of any order. When the amount of hydrogen chloride in the reaction unit is insufficient, hydrogen chloride gas can be supplied from the corresponding hydrogen chloride gas supply pipeline 5.

[0043] In some embodiments of the reaction unit 1, referring to Figure 1 The reaction unit 1 includes a reactor 13, a gas-gas heat exchanger 14, and a circulating water heat exchanger 15. The gas-gas heat exchanger 14 includes a low-temperature gas inlet, a low-temperature gas outlet, a high-temperature gas inlet, and a high-temperature gas outlet. The circulating water heat exchanger 15 includes a gas inlet and a gas outlet. In the same reaction unit 1, the low-temperature gas outlet of the gas-gas heat exchanger 14 is connected to the bottom inlet of the reactor 13, the top outlet of the reactor 13 is connected to the high-temperature gas inlet of the gas-gas heat exchanger 14, the high-temperature gas outlet of the gas-gas heat exchanger 14 is connected to the gas inlet of the circulating water heat exchanger 15, the low-temperature gas inlet of the gas-gas heat exchanger 14 is the hydrogen chloride gas input port 11 of the reaction unit 1, and the gas outlet of the circulating water heat exchanger 15 is the tail gas output port 12 of the reaction unit 1. In other embodiments of the reaction unit 1, the reaction unit 1 only includes the reactor 13, and does not include the gas-gas heat exchanger 14 and the circulating water heat exchanger 15. The hydrogen chloride gas inlet of the reactor 13 is the hydrogen chloride gas input port 11 of the reaction unit 1, and the tail gas outlet of the reactor 13 is the tail gas output port 12 of the reaction unit 1.

[0044] In some embodiments, referring to Figure 1The first pipeline 2 is further provided with a first filter 23, which is located between the second valve 22 and the hydrogen chloride gas input port 11 of the corresponding stage reaction unit 1.

[0045] In this embodiment, by arranging the first filter 23 upstream of the hydrogen chloride gas input port 11, the problem of clogging of the gas-gas heat exchanger 14 of the reaction unit 1 caused by the inflow of silicon powder or hydrolysis product into the reaction unit 1 can be avoided.

[0046] In some embodiments, referring to Figure 1 The outer side of the reactor 13 is further connected with an electric heater 16, which is used to continuously provide heat to the reactor.

[0047] In some embodiments, referring to Figure 1 The other end of the direct discharge valve 3 is connected in parallel to a reaction tail gas treatment device.

[0048] In some embodiments, referring to Figure 1 The reaction tail gas treatment device comprises a liquid collector 61, a second filter 62, a pipeline cooler 63, a gas-liquid separation tank 64, a waste gas treatment device 65 and a rectification device 66. The liquid collector 61 is used to collect the liquid phase chlorosilane generated upstream. The second filter 62 is used to filter the impurities such as silicon powder in the tail gas. The pipeline cooler 63 is used to reduce the temperature of the tail gas, so that the chlorosilane gas in the tail gas is fully condensed into liquid phase. The gas-liquid separation tank 64 is used to separate the liquid phase chlorosilane and the partial non-condensable tail gas comprising hydrogen and hydrogen chloride. The other end of the direct discharge valve 3 is connected in parallel to the top gas inlet of the liquid collector 61, and the liquid collector 61, the second filter 62, the pipeline cooler 63 and the gas-liquid separation tank 64 are connected in sequence. The top gas outlet of the gas-liquid separation tank 64 is connected to the waste gas treatment device 65. The bottom liquid outlet of the gas-liquid separation tank 64 is connected to the rectification device 66 through a pipeline.

[0049] In some embodiments, the bottom liquid outlet of the liquid collector 61 and the bottom liquid outlet of the second filter 62 are connected in parallel to the bottom liquid inlet of the gas-liquid separation tank 64, so that the liquid phase chlorosilane in the second filter 62 is intermittently discharged to the gas-liquid separation tank 64, and the liquid phase chlorosilane in the liquid collector 61 is intermittently discharged to the gas-liquid separation tank 64.

[0050] In the actual series connection of the last stage reaction unit, after the waste heat recovery, the liquid phase of the tail gas in the reactor is discharged to the gas-liquid separation tank 64 through the liquid collector 61, and the gas phase is sequentially introduced into the gas-liquid separation tank 64 through the second filter 62 and the pipeline cooler 63. If the second filter 62 still condenses liquid phase chlorosilane, it is discharged from the bottom liquid outlet to the gas-liquid separation tank 64.

[0051] Alternatively, two sets of liquid collectors 61 and second filters 62 can be provided for alternative use.

[0052] In some embodiments, a liquid delivery pump 67 is further arranged on the pipeline connecting the bottom end liquid discharge port of the gas-liquid separation tank 64 and the rectifying device 66.

[0053] Specifically, when the liquid in the gas-liquid separation tank 64 reaches a preset liquid level, the liquid delivery pump 67 is started to discharge the liquid to the rectifying device 66.

[0054] The utility model provides a kind of for the system of removing polycrystalline silicon on the surface of bearing for removing particulate silicon production, the method and approach of many specific implementation this technical scheme, above-mentioned is only preferred implementation mode of the utility model, it should be pointed out, for the ordinary skilled person in the art, under the premise of not departing from the principle of the utility model, can also make several improvements and refinements, these improvements and refinements also should be regarded as the protection scope of the utility model. The components not explicitly in the embodiment can be implemented using existing technology.

Claims

1. A system for removing polysilicon from the surface of a carrier used in the production of particulate silicon, characterized by The application relates to a multi-stage reaction unit, which comprises two or more reaction units (1) arranged in sequence, wherein each stage of the reaction unit (1) comprises a hydrogen chloride gas input port (11) and a tail gas output port (12); each reaction unit (1) is configured to accommodate a carrier with polycrystalline silicon attached to the surface; hydrogen chloride gas input from the hydrogen chloride gas input port (11) reacts with the polycrystalline silicon in the reaction unit (1) to generate tail gas. A direct discharge valve (3) is arranged corresponding to each stage of the reaction unit (1), and the gas inlet end of each direct discharge valve (3) is connected to the tail gas output port (12) of the corresponding stage of the reaction unit (1). A first pipeline (2) is arranged corresponding to each stage of the reaction unit (1) except the first stage of the reaction unit (1), the outlet end of the first pipeline (2) is connected to the hydrogen chloride gas input port (11) of the corresponding stage of the reaction unit (1), the inlet end of the first pipeline (2) is connected to the tail gas output port (12) of the upper stage of the reaction unit (1) and is located upstream of the direct discharge valve (3); and the first pipeline (2) is provided with a valve assembly for controlling the on-off of the first pipeline (2). The valve assembly comprises a first valve (21) and a second valve (22), the first valve (21) is close to the tail gas output port (12) of the upper stage of the reaction unit (1); a third valve (4) is further arranged corresponding to the first pipeline (2) between adjacent two stages, one end of the third valve (4) is connected to any one of the first pipeline (2) between adjacent two stages and the connection position is between the first valve (21) and the second valve (22) on the corresponding first pipeline (2), the other end of the third valve (4) is connected to the other one of the first pipeline (2) between adjacent two stages and the connection position is between the first valve (21) and the second valve (22) on the corresponding first pipeline (2).

2. The system for removing the polysilicon from the surface of the carrier for the production of granular silicon according to claim 1, characterized in that, The first pipeline (2) is further provided with a first filter (23), and the first filter (23) is located between the second valve (22) and the hydrogen chloride gas input port (11) of the corresponding stage of the reaction unit (1).

3. The system for removing the polysilicon from the surface of the carrier for the production of granular silicon according to claim 2, characterized in that, The hydrogen chloride gas input port (11) of each stage of the reaction unit (1) is further connected with a hydrogen chloride gas supply pipeline (5) corresponding.

4. The system for removing the polysilicon from the surface of the carrier for producing granular silicon according to claim 2, wherein ​ 5. The system for removing poly crystalline silicon from the surface of a carrier for the production of granular silicon according to claim 1, characterized in that, The reaction unit (1) comprises a reactor (13), a gas-gas heat exchanger (14) and a circulating water heat exchanger (15), the gas-gas heat exchanger (14) comprises a low-temperature gas inlet, a low-temperature gas outlet, a high-temperature gas inlet and a high-temperature gas outlet; the circulating water heat exchanger (15) comprises a gas inlet and a gas outlet; in the same reaction unit (1), the low-temperature gas outlet of the gas-gas heat exchanger (14) is communicated with the bottom end inlet of the reactor (13), the top end outlet of the reactor (13) is communicated with the high-temperature gas inlet of the gas-gas heat exchanger (14), the high-temperature gas outlet of the gas-gas heat exchanger (14) is communicated with the gas inlet of the circulating water heat exchanger (15), the low-temperature gas inlet of the gas-gas heat exchanger (14) is the hydrogen chloride gas input port (11) of the reaction unit (1), and the gas outlet of the circulating water heat exchanger (15) is the tail gas output port (12) of the reaction unit (1).

6. The system for removing the polysilicon from the surface of the carrier for the production of granular silicon according to claim 5, characterized in that, An electric heater (16) is further connected to the outside of the reactor (13).

7. The system for removing poly crystalline silicon from the surface of a carrier for the production of granular silicon according to claim 1, characterized in that, The reaction tail gas treatment device is connected to the other end of the direct discharge valve (3) in parallel.

8. The system for removing the polysilicon from the surface of the carrier for the production of granular silicon according to claim 7, characterized in that, The reaction tail gas treatment device comprises a liquid collector (61), a second filter (62), a pipeline cooler (63), a gas-liquid separation tank (64), a waste gas treatment device (65) and a rectification device (66); the other end of the direct discharge valve (3) is connected to the top gas inlet of the liquid collector (61) in parallel, and the liquid collector (61), the second filter (62), the pipeline cooler (63) and the gas-liquid separation tank (64) are connected in sequence; the top gas outlet of the gas-liquid separation tank (64) is connected to the waste gas treatment device (65); and the bottom liquid discharge port of the gas-liquid separation tank (64) is connected to the rectification device (66) through a pipeline.

9. The system for removing poly crystalline silicon from the surface of a carrier for the production of granular silicon according to claim 8, characterized in that The bottom liquid discharge port of the liquid collector (61) and the bottom liquid discharge port of the second filter (62) are connected to the bottom liquid inlet of the gas-liquid separation tank (64) in parallel.

10. The system for removing polysilicon from the surface of a carrier for the production of granular silicon according to claim 8, characterized in that A liquid delivery pump (67) is further arranged on the pipeline connecting the bottom liquid discharge port of the gas-liquid separation tank (64) and the rectification device (66).

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