Deposition apparatus
By designing multiple sets of air inlets and air inlet rings with regulating valves in the deposition equipment, the problem of poor uniformity of wafer film deposition was solved, achieving greater flexibility and uniformity in film thickness adjustment.
Patent Information
- Application Number
- CN202520125187.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-17
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2035-01-17
AI Technical Summary
Traditional air intake rings result in poor wafer film uniformity.
An air intake ring was designed, which includes multiple sets of air intake nozzles and a regulating valve. The air intake volume is adjusted by the regulating valve to improve the uniformity of film formation, and air intake nozzles with different inner diameters can be replaced to adapt to film thickness requirements.
By combining multiple sets of air inlets and regulating valves, the uniformity of wafer film deposition was improved, and the flexibility and uniformity of film thickness adjustment were enhanced.
Smart Images
Figure CN223660205U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of deposition technology, and in particular to a deposition apparatus. Background Technology
[0002] In related technologies, reactive gases are typically introduced into the deposition chamber of the deposition equipment via an air intake ring to perform deposition processing on the wafer within the deposition chamber.
[0003] However, traditional inlet rings can lead to poor film uniformity on wafers. Utility Model Content
[0004] Therefore, it is necessary to provide a deposition apparatus that can improve the film uniformity of wafers in response to the above-mentioned technical problems.
[0005] This application provides a deposition apparatus, including an air inlet ring, a bottom shell, and a top cover. The air inlet ring includes an air inlet ring body, multiple sets of air inlet nozzles, and a regulating valve. The air inlet ring body has independent first and second air inlet channels. The multiple sets of air inlet nozzles are arranged circumferentially on the air inlet ring body. Each set of air inlet nozzles includes at least one first air inlet connected to the first air inlet channel and at least one second air inlet connected to the second air inlet channel. Each second air inlet is provided with the regulating valve. The top cover is provided with the air inlet ring and covers the bottom shell, forming deposition chambers that are respectively connected to the first and second air inlets.
[0006] In the technical solution of this application, since multiple sets of air inlet nozzles are arranged at intervals along the circumference of the air inlet ring body, and each second air inlet nozzle is provided with an adjustment valve, the adjustment valve at the corresponding position can be adjusted according to the film thickness of the wafer. For example, if the film thickness of the wafer at the position corresponding to the adjustment valve is thicker, the air intake of the corresponding second air inlet nozzle can be reduced by adjusting the valve. Or, if the film thickness of the wafer at the position corresponding to the adjustment valve is thinner, the air intake of the corresponding second air inlet nozzle can be increased by adjusting the valve. In this way, the adjustment valves on the second air inlets of the multiple sets of air inlet nozzles can be adjusted according to the film uniformity requirements of the wafer, thereby improving the film uniformity of the wafer by utilizing the air inlet ring.
[0007] In one embodiment, each of the air intake nozzle groups includes a first air intake nozzle and two second air intake nozzles arranged circumferentially on both sides of the first air intake nozzle along the body of the air intake ring; each of the second air intake nozzles is provided with the regulating valve.
[0008] Multiple second air inlets in each air inlet group enter the deposition chamber from different directions, which helps to improve the film uniformity of the wafer in different directions.
[0009] In one embodiment, the first air intake nozzle has a first mounting end and a first nozzle end disposed opposite to each other, the first mounting end being detachably connected to the air intake ring body; the first nozzle end is provided with a first air intake port communicating with the first air intake channel.
[0010] In this way, a first air inlet with a suitable inner diameter can be selected based on the film thickness at the location of the first air inlet on the wafer. For example, if the film thickness at the location of the first air inlet on the wafer is relatively thick, the first air inlet can be replaced with a first air inlet with a smaller inner diameter. Or, if the film thickness at the location of the first air inlet on the wafer is relatively thin, the first air inlet can be replaced with a first air inlet with a larger inner diameter. In this way, a first air inlet with a suitable inner diameter can be selected from multiple air inlet groups, which is beneficial to improving the film uniformity of the wafer.
[0011] In one embodiment, the second air intake has a second mounting end and a second nozzle end disposed opposite to each other, the second mounting end being detachably connected to the air intake ring body; the second nozzle end is provided with a second air intake port communicating with the second air intake channel.
[0012] In this way, a second air inlet with a suitable inner diameter can be selected based on the film thickness at the location of the second air inlet on the wafer. For example, if the film thickness at the location of the second air inlet on the wafer is relatively thick, the second air inlet can be replaced with a second air inlet with a smaller inner diameter. Or, if the film thickness at the location of the second air inlet on the wafer is relatively thin, the second air inlet can be replaced with a second air inlet with a larger inner diameter. In this way, a second air inlet with a suitable inner diameter can be selected from multiple air inlet groups, which is beneficial to improving the film uniformity of the wafer.
[0013] In one embodiment, the regulating valve is configured as a diaphragm valve, the diaphragm valve including a diaphragm made of tetrafluoroethylene.
[0014] Because the diaphragm valve includes a diaphragm, and the diaphragm is made of polytetrafluoroethylene (PTFE), the corrosion resistance of the control valve can be improved, thereby improving the reliability and service life of the control valve.
[0015] In one embodiment, the top cover is detachably attached to the bottom shell.
[0016] It allows for easy opening of the top cover and adjustment of the intake ring regulating valve.
[0017] In one embodiment, the bottom shell is provided with a third air intake channel communicating with the first air intake channel; the deposition device further includes a first sealing ring, which surrounds the third air intake channel and is located between the first air intake channel and the third air intake channel.
[0018] The sealing performance of the first and third air intake channels can be improved by using the first sealing ring, which facilitates the supply of the first reaction gas to the first air intake channel through the third air intake channel.
[0019] In one embodiment, the bottom shell is provided with a fourth air intake channel communicating with the second air intake channel; the deposition device further includes a second sealing ring, which surrounds the fourth air intake channel and is located between the second air intake channel and the fourth air intake channel.
[0020] The sealing performance of the second and fourth air intake channels can be improved by using the second sealing ring, which facilitates the supply of the second reaction gas to the second air intake channel through the fourth air intake channel.
[0021] In one embodiment, the upper cover is provided with a central air inlet that communicates with the deposition chamber; the multiple sets of air inlets are arranged at equal intervals around the central air inlet.
[0022] On the one hand, a third reaction gas (which can be silane or silicon tetrafluoride) can be introduced into the deposition chamber through the central air inlet, and the third reaction gas can be replenished into the deposition chamber according to the needs of the deposition reaction. On the other hand, multiple sets of air inlets are arranged at equal intervals around the central air inlet, which can make the first and second reaction gases enter the chamber evenly, thereby improving the uniformity of the wafer film formation.
[0023] In one embodiment, the air intake ring body is provided with a fifth air intake channel communicating with the central air intake hole; the bottom shell is provided with a sixth air intake channel communicating with the fifth air intake channel; the deposition device further includes a third sealing ring, which is arranged around the fifth air intake channel and located between the fifth air intake channel and the sixth air intake channel.
[0024] The sealing performance of the fifth and sixth air intake channels can be improved by using the third sealing ring, which facilitates the supply of the third reaction gas to the fifth air intake channel through the sixth air intake channel. Attached Figure Description
[0025] Figure 1 A schematic diagram of the deposition apparatus according to one embodiment of this application is shown.
[0026] Figure 2 A partial structural schematic diagram of the air intake ring and the top cover in one embodiment of this application is shown.
[0027] Figure 3 A schematic diagram of the structure of the first air inlet in one embodiment of this application is shown.
[0028] Reference numerals: 10, Deposition equipment; Q, Deposition chamber; 100, Inlet ring; 110, Inlet ring body; 120, Inlet nozzle assembly; 121, First inlet nozzle; 1211, First mounting end; 1212, First nozzle end; 122, Second inlet nozzle; 1221, Second mounting end; 1222, Second nozzle end; 130, Regulating valve; 200, Bottom shell; 300, Top cover; 400, Handle; 500, Second connector; Z, Central air inlet; T1, First air inlet channel; T2, Second air inlet channel; T3, Third air inlet channel; T4, Fourth air inlet channel; T5, Fifth air inlet channel; T6, Sixth air inlet channel; K1, First air inlet. Detailed Implementation
[0029] To make the above-mentioned objectives, features, and advantages of this application more apparent and understandable, the specific embodiments of this application are described in detail below with reference to the accompanying drawings. Many specific details are set forth in the following description to provide a thorough understanding of this application. However, this application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar modifications without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.
[0030] In the description of this application, it should be understood that if terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" appear, these terms indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.
[0031] Furthermore, where the terms "first" and "second" appear, these terms are for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined with "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, where the term "multiple" appears, "multiple" means at least two, such as two, three, etc., unless otherwise explicitly specified.
[0032] In this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "joining," and "fixing," etc., should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components, unless otherwise expressly limited. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.
[0033] In this application, unless otherwise expressly specified and limited, the use of descriptions such as "above" or "below" the second feature indicates that the first and second features are in direct contact or indirect contact via an intermediate medium. Furthermore, "above," "on top of," and "over" the second feature can mean that the first feature is directly above or diagonally above the second feature, or simply that the first feature is at a higher horizontal level than the second feature. Similarly, "below," "below," and "under" the second feature can mean that the first feature is directly below or diagonally below the second feature, or simply that the first feature is at a lower horizontal level than the second feature.
[0034] It should be noted that if an element is referred to as being "fixed to" or "set on" another element, it can be directly on the other element or there may be an intervening element. If an element is considered to be "connected to" another element, it can be directly connected to the other element or there may be an intervening element. If so, the terms "vertical," "horizontal," "upper," "lower," "left," "right," and similar expressions used in this application are for illustrative purposes only and do not represent the only possible implementation.
[0035] Figure 1 A schematic diagram of the deposition apparatus according to one embodiment of this application is shown. Figure 2 A partial structural schematic diagram of the intake ring and upper cover according to one embodiment of this application is shown. Figure 3 A schematic diagram of the structure of the first air inlet in one embodiment of this application is shown.
[0036] Please refer to the following: Figures 1-3 One embodiment of this application provides a deposition apparatus 10, including an air intake ring 100, a bottom shell 200 and an upper cover 300, wherein the upper cover 300 is provided with the air intake ring 100.
[0037] The upper cover 300 is provided with an air intake ring 100, which includes an air intake ring body 110, multiple sets of air intake nozzles 120 and a regulating valve 130.
[0038] Multiple sets of air intake nozzles 120 are arranged at intervals along the circumference of the air intake ring body 110. Specifically, multiple sets of air intake nozzles 120 are arranged at intervals along the circumference of the air intake ring body 110 on the inner circumferential wall of the air intake ring body 110.
[0039] The intake ring body 110 has a first intake channel T1 and a second intake channel T2 that are independent of each other. Each intake nozzle group 120 includes at least one first intake nozzle 121 connected to the first intake channel T1 and at least one second intake nozzle 122 connected to the second intake channel T2.
[0040] The upper cover 300 is placed on the bottom shell 200, and the upper cover 300 and the bottom shell 200 enclose a deposition chamber Q that is connected to the first air inlet 121 and the second air inlet 122 respectively.
[0041] The first reactive gas can be introduced into the first air inlet 121 of the multiple air inlet groups 120 through the first air inlet channel T1, and the second reactive gas can be introduced into the second air inlet 122 of the multiple air inlet groups 120 through the second air inlet channel T2. This facilitates the introduction of the first and second reactive gases into the deposition chamber Q of the deposition equipment 10, thereby enabling the deposition of the wafer in the deposition chamber Q of the deposition equipment 10 using the first and second reactive gases.
[0042] For example, the first reacting gas can be oxygen, and the second reacting gas can be silane (SiH4), so that silicon dioxide can be deposited on the wafer using the inlet ring 100; of course, this application is not limited to this, the second reacting gas can also be silicon tetrafluoride, or the second reacting gas can also be silane and argon, or the second reacting gas can also be silicon tetrafluoride and phosphine.
[0043] Since multiple sets of air inlet nozzles 120 are arranged circumferentially on the air inlet ring body 110, and each second air inlet nozzle 122 is provided with an adjusting valve 130, the adjusting valve 130 at the corresponding position can be adjusted according to the film thickness of the wafer. For example, if the film thickness of the wafer at the position corresponding to the adjusting valve 130 is thicker, the air intake of the corresponding second air inlet nozzle 122 can be reduced by adjusting valve 130. Or, if the film thickness of the wafer at the position corresponding to the adjusting valve 130 is thinner, the air intake of the corresponding second air inlet nozzle 122 can be increased by adjusting valve 130. In this way, the adjusting valve 130 on the second air inlet nozzle 122 of the multiple sets of air inlet nozzles 120 can be adjusted according to the film uniformity requirements of the wafer, thereby improving the film uniformity of the wafer by using the air inlet ring 100.
[0044] In some embodiments, each air inlet assembly 120 includes a first air inlet 121 and two second air inlets 122 arranged circumferentially on both sides of the first air inlet 121 along the air inlet ring body 110, and each second air inlet 122 is provided with an adjusting valve 130.
[0045] The multiple second air inlets 122 of each air inlet group 120 are introduced into the deposition chamber Q from different directions, which helps to improve the film uniformity of the wafer in different directions.
[0046] In some embodiments, reference may be made to Figure 2 and Figure 3 The first air intake nozzle 121 has a first mounting end 1211 and a first nozzle end 1212 that are arranged opposite to each other. The first mounting end 1211 is detachably connected to the air intake ring body 110, and the first nozzle end 1212 is provided with a first air intake port K1 that communicates with the first air intake channel T1.
[0047] The first mounting end 1211 can be snapped or threaded onto the intake ring body 110. For example, the first mounting end 1211 is threaded onto the inner peripheral wall of the intake ring body 110.
[0048] In this way, a first air inlet 121 with a suitable inner diameter can be selected according to the film thickness at the location of the first air inlet 121 on the wafer. For example, if the film thickness at the location of the first air inlet 121 on the wafer is relatively thick, the first air inlet 121 can be replaced with a first air inlet 121 with a smaller inner diameter. Or, if the film thickness at the location of the first air inlet 121 on the wafer is relatively thin, the first air inlet 121 can be replaced with a first air inlet 121 with a larger inner diameter. In this way, a first air inlet 121 with a suitable inner diameter can be selected from multiple air inlet groups 120, which is beneficial to improving the film uniformity of the wafer.
[0049] In some embodiments, the second air intake nozzle 122 has a second mounting end 1221 and a second nozzle end 1222 disposed opposite to each other. The second mounting end 1221 is detachably connected to the air intake ring body 110, and the second nozzle end 1222 is provided with a second air intake port (not shown in the figure) that communicates with the second air intake channel T2.
[0050] The second mounting end 1221 can be snapped or threaded onto the intake ring body 110. For example, the second mounting end 1221 is threaded onto the inner peripheral wall of the intake ring body 110.
[0051] In this way, a second air inlet 122 with a suitable inner diameter can be selected according to the film thickness at the location of the second air inlet 122 on the wafer. For example, if the film thickness at the location of the second air inlet 122 on the wafer is thicker, the second air inlet 122 can be replaced with a second air inlet 122 with a smaller inner diameter. Or, if the film thickness at the location of the second air inlet 122 on the wafer is thinner, the second air inlet 122 can be replaced with a second air inlet 122 with a larger inner diameter. In this way, a second air inlet 122 with a suitable inner diameter can be selected from multiple air inlet groups 120, which is beneficial to improving the film uniformity of the wafer.
[0052] In some embodiments, the regulating valve 130 is configured as a diaphragm valve, which includes a diaphragm made of tetrafluoroethylene.
[0053] Since the diaphragm valve includes a diaphragm, and the diaphragm is made of polytetrafluoroethylene (PTFE), the corrosion resistance of the control valve 130 can be improved, thereby improving the reliability and service life of the control valve 130.
[0054] Specifically, the regulating valve 130 can be a butterfly valve.
[0055] Optionally, the top cover 300 is sealed to the bottom shell 200, which can improve the sealing performance of the deposition chamber Q.
[0056] Optionally, the top cover 300 is detachably connected to the bottom shell 200, making it easy to open the top cover 300 and adjust the regulating valve 130 of the intake ring 100.
[0057] The deposition apparatus 10 also includes a handle 400 on the upper cover 300, which facilitates moving the upper cover 300 via the handle 400, thereby opening or closing the deposition chamber Q.
[0058] In some embodiments, the bottom shell 200 is provided with a third air intake channel T3 that communicates with the first air intake channel T1, and the deposition device 10 further includes a first sealing ring (not shown in the figure), which is disposed around the third air intake channel T3 and is located between the first air intake channel T1 and the third air intake channel T3.
[0059] The sealing performance of the first air intake channel T1 and the third air intake channel T3 can be improved by using the first sealing ring, thereby facilitating the supply of the first reaction gas to the first air intake channel T1 through the third air intake channel T3.
[0060] Optionally, the bottom shell 200 is provided with a first connector (not shown in the figure) that communicates with the third air intake passage T3.
[0061] This allows the first connector to be connected to a first gas source (not shown in the figure) for containing the first reaction gas.
[0062] In some embodiments, the bottom shell 200 is provided with a fourth air intake channel T4 communicating with the second air intake channel T2, and the deposition apparatus 10 further includes a second sealing ring (not shown in the figure), which is disposed around the fourth air intake channel T4 and located between the second air intake channel T2 and the fourth air intake channel T4.
[0063] The sealing performance of the second air intake channel T2 and the fourth air intake channel T4 can be improved by using the second sealing ring, thereby facilitating the supply of the second reaction gas to the second air intake channel T2 through the fourth air intake channel T4.
[0064] Optionally, the bottom shell 200 is provided with a second connector 500 that communicates with the fourth air intake passage T4.
[0065] This allows the second connector 500 to be connected to a second gas source (not shown in the figure) for containing the second reaction gas.
[0066] In some embodiments, the upper cover 300 is provided with a central air inlet Z that communicates with the deposition chamber Q, and multiple sets of air inlet groups 120 are arranged at equal intervals around the central air inlet Z.
[0067] On the one hand, a third reaction gas (which can be silane or silicon tetrafluoride) can be introduced into the deposition chamber Q through the central air inlet Z, and the third reaction gas can be replenished into the deposition chamber Q according to the needs of the deposition reaction. On the other hand, multiple sets of air inlets 120 are arranged at equal intervals around the central air inlet Z, which can make the first reaction gas and the second reaction gas enter the chamber evenly, thereby improving the uniformity of the wafer film formation.
[0068] For example, the first reacting gas can be oxygen, the second reacting gas can be silane (SiH4), and the third reacting gas can be silicon tetrafluoride. In this way, silicon dioxide can be deposited on the wafer using the inlet ring 100, and the properties of the film deposited on the wafer can be changed by adding fluorine.
[0069] In some embodiments, the intake ring body 110 is provided with a fifth intake channel T5 that communicates with the central intake hole Z, and the bottom shell 200 is provided with a sixth intake channel T6 that communicates with the fifth intake channel T5. The deposition device 10 also includes a third sealing ring (not shown in the figure), which surrounds the fifth intake channel T5 and is located between the fifth intake channel T5 and the sixth intake channel T6.
[0070] Specifically, along a direction parallel to the central axis of the intake ring 100, the fifth intake channel T5 is provided through the intake ring body 110 and partially through the upper cover 300, so that the fifth intake channel T5 can be connected to the central intake hole Z on the upper cover 300.
[0071] The sealing performance of the fifth intake channel T5 and the sixth intake channel T6 can be improved by using the third sealing ring, thereby facilitating the supply of the third reaction gas to the fifth intake channel T5 through the sixth intake channel T6.
[0072] Optionally, the bottom shell 200 is provided with a third connector (not shown in the figure) that communicates with the sixth air intake passage T6.
[0073] This allows the third connector to be connected to a third gas source (not shown in the figure) for containing the third reaction gas.
[0074] In the deposition apparatus 10 of this application, the regulating valve 130 on the second air inlet 122 of the multiple air inlet groups 120 can be adjusted according to the requirements of the film uniformity of the wafer, thereby improving the film uniformity of the wafer by utilizing the air inlet ring 100.
[0075] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0076] The above embodiments merely illustrate several implementation methods of this application, and while the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this application, and these all fall within the protection scope of this application. Therefore, the protection scope of this patent application should be determined by the appended claims.
Claims
1. A deposition apparatus, characterized in that, include: Intake ring, including: The main body of the intake ring has an independent first intake channel and a second intake channel; Multiple sets of air intake nozzles are arranged at intervals along the circumference of the air intake ring body; each air intake nozzle set includes at least one first air intake nozzle connected to the first air intake channel, and at least one second air intake nozzle connected to the second air intake channel; and The regulating valve is provided on each of the second air inlets; Bottom shell; and The upper cover is provided with the air intake ring; the upper cover covers the bottom shell and together with the bottom shell, forms a deposition chamber that is respectively connected to the first air intake and the second air intake.
2. The deposition apparatus according to claim 1, characterized in that, Each of the air intake nozzle groups includes a first air intake nozzle and two second air intake nozzles arranged circumferentially on both sides of the first air intake nozzle along the air intake ring body; Each of the second air inlets is provided with the regulating valve.
3. The deposition apparatus according to claim 1, characterized in that, The first air intake has a first mounting end and a first nozzle end that are disposed opposite to each other, and the first mounting end is detachably connected to the air intake ring body; The first nozzle end is provided with a first air inlet that is connected to the first air inlet channel.
4. The deposition apparatus according to claim 1, characterized in that, The second air intake has a second mounting end and a second nozzle end that are disposed opposite to each other, and the second mounting end is detachably connected to the air intake ring body; The second nozzle end is provided with a second air inlet that is connected to the second air inlet channel.
5. The deposition apparatus according to any one of claims 1-4, characterized in that, The regulating valve is constructed as a diaphragm valve, which includes a diaphragm made of tetrafluoroethylene.
6. The deposition apparatus according to any one of claims 1-4, characterized in that, The top cover is detachably connected to the bottom shell.
7. The deposition apparatus according to any one of claims 1-4, characterized in that, The bottom shell is provided with a third air intake channel that communicates with the first air intake channel; The deposition apparatus further includes a first sealing ring, which surrounds the third air intake channel and is located between the first air intake channel and the third air intake channel.
8. The deposition apparatus according to any one of claims 1-4, characterized in that, The bottom shell is provided with a fourth air intake channel that communicates with the second air intake channel; The deposition apparatus further includes a second sealing ring, which surrounds the fourth air intake channel and is located between the second air intake channel and the fourth air intake channel.
9. The deposition apparatus according to claim 1, characterized in that, The upper cover is provided with a central air inlet that communicates with the deposition chamber; The multiple groups of air inlets are arranged at equal intervals around the central air inlet.
10. The deposition apparatus according to claim 9, characterized in that, The main body of the air intake ring is provided with a fifth air intake channel that communicates with the central air intake hole; The bottom shell is provided with a sixth air intake channel that communicates with the fifth air intake channel; The deposition apparatus further includes a third sealing ring, which surrounds the fifth air intake channel and is located between the fifth air intake channel and the sixth air intake channel.