Integrated 2*4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip
By integrating a 2x4 channel wavelength demultiplexing germanium-silicon photodiode receiver array chip on a silicon-based chip, the problems of high cost and low efficiency in the existing technology have been solved, achieving cost reduction and production efficiency improvement of optical modules.
Patent Information
- Application Number
- CN202423233139.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2025-12-12
- Estimated Expiration
- 2034-12-26
AI Technical Summary
The existing 2*400G FR4 coarse wave splitter module uses MUX with optical waveguide technology and discrete photodiode array, which leads to problems such as high cost, low production efficiency and low yield.
An integrated 2x4 channel wavelength division multiplexer germanium-silicon photodiode receiver array chip is used. By utilizing silicon photonic monolithic integration technology, two four-channel wavelength division multiplexers and a four-channel photodiode array are integrated on a silicon-based chip, replacing traditional optical waveguide technology.
This significantly reduced the cost of optical modules and improved production efficiency and yield.
Smart Images
Figure CN223664813U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The application relates to the technical field of optical modules, in particular to an integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip. BACKGROUND
[0002] The existing 2*400G FR4 coarse wavelength division optical module uses a MUX of an optical waveguide technology and a separate photodiode array, and the scheme has problems of high cost, low production efficiency and yield. SUMMARY
[0003] The application aims to provide an integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip, so as to solve the problems of high cost, low production efficiency and yield of the existing 2*400G FR4 coarse wavelength division optical module using a MUX of an optical waveguide technology and a separate photodiode array.
[0004] To achieve the above-mentioned purpose, the application provides an integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip, which comprises an optical input port I1, an optical input port I2, a first wavelength division multiplexer, a second wavelength division multiplexer, a photodiode PD1, a photodiode PD2, a photodiode PD3, a photodiode PD4, a photodiode PD5, a photodiode PD6, a photodiode PD7 and a photodiode PD8, wherein,
[0005] The optical input port I1 is connected with an optical input end of the first wavelength division multiplexer, a first optical output end of the first wavelength division multiplexer is connected with an optical receiving end of the photodiode PD1, a second optical output end of the first wavelength division multiplexer is connected with an optical receiving end of the photodiode PD2, a third optical output end of the first wavelength division multiplexer is connected with an optical receiving end of the photodiode PD3, and a fourth optical output end of the first wavelength division multiplexer is connected with an optical receiving end of the photodiode PD4.
[0006] The optical input port I2 is connected with an optical input end of the second wavelength division multiplexer, a first optical output end of the second wavelength division multiplexer is connected with an optical receiving end of the photodiode PD5, a second optical output end of the second wavelength division multiplexer is connected with an optical receiving end of the photodiode PD6, a third optical output end of the second wavelength division multiplexer is connected with an optical receiving end of the photodiode PD7, and a fourth optical output end of the second wavelength division multiplexer is connected with an optical receiving end of the photodiode PD8.
[0007] Optionally, the electrical output ends of the photodiode PD1 are connected to a PD1+ end and a PD1- end respectively arranged on the chip, the electrical output ends of the photodiode PD2 are connected to a PD2+ end and a PD2- end respectively arranged on the chip, the electrical output ends of the photodiode PD3 are connected to a PD3+ end and a PD3- end respectively arranged on the chip, and the electrical output ends of the photodiode PD4 are connected to a PD4+ end and a PD4- end respectively arranged on the chip.
[0008] Optionally, the electrical output ends of the photodiode PD5 are connected to a PD5+ end and a PD5- end respectively arranged on the chip, the electrical output ends of the photodiode PD6 are connected to a PD6+ end and a PD6- end respectively arranged on the chip, the electrical output ends of the photodiode PD7 are connected to a PD7+ end and a PD7- end respectively arranged on the chip, and the electrical output ends of the photodiode PD8 are connected to a PD8+ end and a PD8- end respectively arranged on the chip.
[0009] Optionally, the light input port I1 and the light input port I2 are edge couplers arranged on the chip.
[0010] The embodiments of the present application have the following advantages:
[0011] Compared with the prior art, the above technical solution provides an integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip, which is suitable for a 2*400G FR4 coarse wavelength division optical module, uses silicon photon monolithic integration technology, integrates two four-channel wavelength division multiplexers (MUXs) and a four-channel photodiode (PD) array on a silicon-based chip, replaces the MUXs using optical waveguide technology and the separate photodiode array in the current traditional scheme, significantly reduces the cost of the optical module, and improves the production efficiency and yield. BRIEF DESCRIPTION OF DRAWINGS
[0012] In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings in the following description are only exemplary, and other drawings can be derived from the provided drawings without creative labor for those skilled in the art.
[0013] Figure 1 A circuit structure block diagram of an integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip is provided for at least one embodiment of the present application. DETAILED DESCRIPTION
[0014] The following describes the embodiments of the present application by specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the disclosure. Obviously, the described embodiments are part of the embodiments of the present application, not all. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor are within the scope of protection of the present application.
[0015] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", "third" are only for descriptive purposes and cannot be understood as indicating or implying relative importance. Unless otherwise specifically defined and limited, the terms "set", "mount", "connected", "connected" should be broadly understood, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.
[0016] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.
[0017] The embodiment of the present application provides a kind of integrated 2x4 channel wave division multiplexing germanium-silicon photodiode receiving array chip, reference Figure 1 , comprising: optical input port I1, optical input port I2, first wave division multiplexer, second wave division multiplexer, photodiode PD1, photodiode PD2, photodiode PD3, photodiode PD4, photodiode PD5, photodiode PD6, photodiode PD7, photodiode PD8, wherein,
[0018] The optical input port I1 is connected with the optical input end of the first wave division multiplexer, the first optical output end of the first wave division multiplexer is connected with the optical receiving end of the photodiode PD1, the second optical output end of the first wave division multiplexer is connected with the optical receiving end of the photodiode PD2, the third optical output end of the first wave division multiplexer is connected with the optical receiving end of the photodiode PD3, and the fourth optical output end of the first wave division multiplexer is connected with the optical receiving end of the photodiode PD4;
[0019] The light input port I2 is connected with the light input end of the second wavelength division multiplexer, the first light output end of the second wavelength division multiplexer is connected with the light receiving end of the photodiode PD5, the second light output end of the second wavelength division multiplexer is connected with the light receiving end of the photodiode PD6, the third light output end of the second wavelength division multiplexer is connected with the light receiving end of the photodiode PD7, and the fourth light output end of the second wavelength division multiplexer is connected with the light receiving end of the photodiode PD8.
[0020] In some embodiments, the electrical output end of the photodiode PD1 is connected with the PD1+ end and the PD1- end arranged on the chip respectively, the electrical output end of the photodiode PD2 is connected with the PD2+ end and the PD2- end arranged on the chip respectively, the electrical output end of the photodiode PD3 is connected with the PD3+ end and the PD3- end arranged on the chip respectively, and the electrical output end of the photodiode PD4 is connected with the PD4+ end and the PD4- end arranged on the chip respectively.
[0021] In some embodiments, the electrical output end of the photodiode PD5 is connected with the PD5+ end and the PD5- end arranged on the chip respectively, the electrical output end of the photodiode PD6 is connected with the PD6+ end and the PD6- end arranged on the chip respectively, the electrical output end of the photodiode PD7 is connected with the PD7+ end and the PD7- end arranged on the chip respectively, and the electrical output end of the photodiode PD8 is connected with the PD8+ end and the PD8- end arranged on the chip respectively.
[0022] Specifically, the first wavelength division multiplexer and the second wavelength division multiplexer, i.e. Figure 1 DeMUX1 and DeMUX2 in the above formula, refer to optical wavelength division multiplexers, which function to split one optical signal into four optical signals.
[0023] In some embodiments, the light input port I1 and the light input port I2 are edge couplers arranged on the chip.
[0024] In summary, compared with the prior art, the integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip provided in the application is applicable to a 2*400G FR4 coarse wavelength division optical module, uses a silicon photon monolithic integration technology, integrates two four-channel wavelength division multiplexers (MUX) and a four-channel photodiode (PD) array on a silicon-based chip, replaces the MUX using an optical waveguide technology and a separate photodiode array in the current traditional scheme, significantly reduces the cost of the optical module, and improves the production efficiency and yield.
[0025] Note that, unless otherwise explicitly stated, all features disclosed in this specification (including any appended claims, abstract, and drawings) may be replaced by alternative features for achieving the same, equivalent, or similar purpose. Therefore, unless explicitly stated otherwise, each disclosed feature is merely one example of a set of equivalent or similar features. Where used, "further," "preferably," "even further," and "more preferably" are simple starting points for describing another embodiment based on the foregoing embodiments, the combination of which with the foregoing embodiments constitutes the complete configuration of another embodiment. Any combination of several "further," "preferably," "even further," or "more preferably" settings following the same embodiment constitutes yet another embodiment.
[0026] In the implementation of functions and steps, the corresponding functions and steps in the various embodiments may occur in a different order than those shown. For example, two consecutive functions and steps may actually be executed or implemented substantially in parallel, and they may sometimes be executed or implemented in reverse order, depending on the functions involved.
[0027] Although this application has been described in detail above with general descriptions and specific embodiments, some modifications or improvements can be made to it, which will be obvious to those skilled in the art. Therefore, all such modifications or improvements made without departing from the spirit of this application fall within the scope of protection claimed in this application.
Claims
1. An integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiver array chip, characterized by, Comprise: optical input port I1, optical input port I2, first wavelength division multiplexer, second wavelength division multiplexer, photodiode PD1, photodiode PD2, photodiode PD3, photodiode PD4, photodiode PD5, photodiode PD6, photodiode PD7, photodiode PD8, wherein, the optical input port I1 is connected with the optical input end of the first wavelength division multiplexer, the first optical output end of the first wavelength division multiplexer is connected with the optical receiving end of the photodiode PD1, the second optical output end of the first wavelength division multiplexer is connected with the optical receiving end of the photodiode PD2, the third optical output end of the first wavelength division multiplexer is connected with the optical receiving end of the photodiode PD3, and the fourth optical output end of the first wavelength division multiplexer is connected with the optical receiving end of the photodiode PD4; the optical input port I2 is connected with the optical input end of the second wavelength division multiplexer, the first optical output end of the second wavelength division multiplexer is connected with the optical receiving end of the photodiode PD5, the second optical output end of the second wavelength division multiplexer is connected with the optical receiving end of the photodiode PD6, the third optical output end of the second wavelength division multiplexer is connected with the optical receiving end of the photodiode PD7, and the fourth optical output end of the second wavelength division multiplexer is connected with the optical receiving end of the photodiode PD8.
2. The integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip according to claim 1, wherein the electrical output end of the photodiode PD1 is connected with the PD1+ end and the PD1- end arranged on the chip, the electrical output end of the photodiode PD2 is connected with the PD2+ end and the PD2- end arranged on the chip, the electrical output end of the photodiode PD3 is connected with the PD3+ end and the PD3- end arranged on the chip, and the electrical output end of the photodiode PD4 is connected with the PD4+ end and the PD4- end arranged on the chip.
3. The integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip according to claim 1, wherein the electrical output end of the photodiode PD5 is connected with the PD5+ end and the PD5- end arranged on the chip, the electrical output end of the photodiode PD6 is connected with the PD6+ end and the PD6- end arranged on the chip, the electrical output end of the photodiode PD7 is connected with the PD7+ end and the PD7- end arranged on the chip, and the electrical output end of the photodiode PD8 is connected with the PD8+ end and the PD8- end arranged on the chip.
4. The integrated 2x4 channel wavelength division demultiplexing germanium-silicon photodiode receiving array chip according to claim 1, wherein the optical input port I1 and the optical input port I2 are edge couplers arranged on the chip.