Closed sample loading chamber

Abstract

The application provides a closed sample loading chamber, comprising: a chamber, the chamber comprising a cooling zone and an accommodating zone, the cooling zone and the accommodating zone being separated by at least one radiation reflecting plate; the temperature control plate is arranged on the side, away from the radiation reflecting plate, of the cooling area, and the cooling area is used for absorbing heat radiation of a target sample when the target sample is placed in the cooling area. According to the closed sample loading chamber provided by the invention, the cooling time of the wafer can be shortened, and the production efficiency of the wafer can be improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor manufacturing technology, and in particular to a sealed sample loading chamber. Background Technology

[0002] In semiconductor manufacturing, electrochemically deposited copper (ECP) is used to interconnect the metal layers of a wafer through-hole. Typically, a single wafer annealing process is added before each ECP process to repair surface damage to the metal layers caused by etching and to reduce the metal oxide layer on the surface of the metal layers or copper through-holes, thereby increasing the interconnection between the metal layers and the copper through-holes.

[0003] Specifically, the single-wafer annealing process typically involves heating the wafer in a process chamber at a medium temperature of 350°C and introducing excess hydrogen gas into the process chamber to reduce the metal layer or the metal oxide layer on the surface of copper vias. This generates free radicals on the surface of the copper vias, inhibiting the subsequent growth of the oxide layer. After annealing, the wafer is cooled in a sealed sample loading chamber (Load Lock) and then transferred to a wafer pod (FOUP).

[0004] As the critical dimension (CD) continues to shrink, the metal layers M1 to M6 become more sensitive to the oxide layer thickness of the copper vias. This requires minimizing the oxide layer thickness in each process step from M1 to M6. In other words, it requires extending the cooling time of the wafer in the transport system, thereby reducing the wafer production efficiency (WPH).

[0005] Therefore, it is necessary to develop a closed sample loading chamber to shorten the wafer cooling time and improve wafer production efficiency. Utility Model Content

[0006] The purpose of this application is to provide a sealed sample loading chamber to shorten the wafer cooling time and improve wafer production efficiency.

[0007] This application provides a closed sample loading chamber, comprising: a chamber including a cooling zone and a receiving zone, the cooling zone and the receiving zone being separated by at least one radiation reflector; and at least one temperature control plate disposed on the side of the cooling zone away from the radiation reflector, the temperature control plate being used to absorb the thermal radiation of the target sample when the cooling zone is filled with the target sample.

[0008] In some embodiments, the accommodating area is disposed in the middle of the chamber, the cooling area is disposed on both sides of the accommodating area, and the temperature control plate is disposed at the top and bottom of the chamber.

[0009] In some embodiments, the temperature control plate comprises: a plate body, a blackness of a side of the plate body facing the target sample is greater than or equal to 0.9; a liquid cooling pipeline passing through an inside of the plate body for reducing a temperature of the plate body; a heating resistance wire arranged in the inside of the plate body for increasing the temperature of the plate body; and at least one temperature detector for detecting the temperature of the plate body.

[0010] In some embodiments, the liquid cooling pipeline further comprises, in sequence from an input end of the liquid cooling pipeline, a pump, a first liquid flow meter, a refrigeration device, and a liquid phase temperature detector; the pump provides power for flow of a cooling liquid in the liquid cooling pipeline; the first liquid flow meter is used for adjusting a flow rate of the cooling liquid in the liquid cooling pipeline; the refrigeration device is used for cooling the cooling liquid; and the liquid phase temperature detector is used for detecting a temperature of the cooling liquid.

[0011] In some embodiments, the refrigeration device comprises: a liquid phase transmission pipeline, an input end of the liquid phase transmission pipeline is connected with a condenser, an output end of the liquid phase transmission pipeline is connected with an expansion valve; and a second liquid flow meter is arranged between the input end and the output end of the liquid phase transmission pipeline; a heat dissipation pipeline, the heat dissipation pipeline partially surrounds the liquid cooling pipeline for absorbing heat from the liquid cooling pipeline; an input end of the heat dissipation pipeline is connected with the liquid phase transmission pipeline through the expansion valve, an output end of the heat dissipation pipeline is connected with the liquid phase transmission pipeline through the condenser; and a mass flow meter and a compressor are further arranged in sequence between the input end and the output end of the heat dissipation pipeline; and a coolant, the coolant circulates in the liquid phase transmission pipeline and the heat dissipation pipeline, the coolant is in a liquid state in the liquid phase transmission pipeline, and the coolant is in a gaseous state in the heat dissipation pipeline.

[0012] In some embodiments, the closed sample loading chamber further comprises at least one infrared temperature detector arranged in the cooling area for measuring a temperature of the target sample located in the cooling area.

[0013] In some embodiments, the closed sample loading chamber further comprises a controller, the controller is electrically connected with the first liquid flow meter, the refrigeration device, the heating resistance wire, the temperature detector, and the infrared temperature detector, the controller is used for acquiring the temperature of the plate body and the temperature of the target sample and regulating a flow rate of the cooling liquid in the liquid cooling pipeline and a power of the heating resistance wire according to a temperature difference between the target sample and the plate body.

[0014] In some embodiments, the controller is further electrically connected with a conveying device for controlling transfer of the target sample between inside and outside of the chamber.

[0015] In some embodiments, the inner wall of the cooling zone is provided with at least one first clamping groove for clamping the target sample.

[0016] In some embodiments, the radiation absorption coefficient of the radiation reflection plate is less than or equal to 0.002.

[0017] The enclosed sample loading chamber provided by the present application has the following advantages, but is not limited to the following:

[0018] The present application provides an enclosed sample loading chamber, comprising: a chamber, the chamber comprising a cooling zone and a containing zone, the cooling zone and the containing zone being separated by at least one radiation reflection plate; at least one temperature control plate, the temperature control plate being arranged on the side of the cooling zone away from the radiation reflection plate, the cooling zone being used to absorb the thermal radiation of the target sample when the target sample is placed in the cooling zone.

[0019] The enclosed sample loading chamber provided by the present application cools the target sample by heat radiation, a single cooling zone can only cool one target sample at a time, ensuring the uniformity of cooling of different regions of the target sample; the chamber is always in a vacuum state during the cooling process, which can avoid the growth of metal oxide layers caused by the introduction of gas when cooling the wafer; when used with a wafer annealing process equipment, the enclosed sample loading chamber can cool the wafer after the annealing process in real time, without waiting for all the wafers to complete the annealing process, thereby improving the overall cooling efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0020] The following drawings describe the exemplary embodiments disclosed in the present application in detail. The same reference signs in the drawings represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, the drawings are only for the purpose of illustration and description, and are not intended to limit the scope of the present application, and other embodiments can also achieve the same purpose as the invention in the present application. It should be understood that the drawings are not drawn to scale.

[0021] Wherein:

[0022] Figure 1 A structural schematic diagram of an existing enclosed sample loading chamber;

[0023] Figure 2 A structural schematic diagram of an enclosed sample loading chamber according to some embodiments of the present application;

[0024] Figure 3 A structural schematic diagram of a temperature control plate according to some embodiments of the present application; and

[0025] Figure 4 A structural schematic diagram of a refrigeration device according to some embodiments of the present application. Detailed Implementation

[0026] The following description provides specific application scenarios and requirements for this application, intended to enable those skilled in the art to make and use the content of this application. Various partial modifications to the disclosed embodiments will be apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments and applications without departing from the spirit and scope of this application. Therefore, this application is not limited to the embodiments shown, but rather to the widest scope consistent with the claims.

[0027] Figure 1 This is a schematic diagram of the structure of a typical closed sample loading chamber 10. The chamber 10 includes an air inlet 11 located at the top of the chamber 10 and an exhaust outlet 12 located at the top of the chamber 10. The air inlet 11 is connected to a cooling gas source, and the exhaust outlet 12 is connected to an exhaust pipe. The inner wall of the chamber 10 is provided with multiple slots 13 for supporting wafers. Wafers that have completed the annealing process are stacked in the slots 13 from bottom to top. Cooling of the wafers is only started after all wafers have completed the annealing process.

[0028] When wafer cooling is required, cooling gas (e.g., PN2) enters the chamber 10 from the air inlet 11 and exits from the exhaust port 12 to cool the wafer in the slot by means of thermal convection.

[0029] The sealed sample loading chamber has the following shortcomings:

[0030] 1) Uneven cooling rate of wafers at different locations: The cooling rate of wafers located in the middle region of the chamber (especially the central region of the wafer) is significantly lower than that of wafers located at the top or bottom of the chamber.

[0031] 2) The cooling rate of wafers is not uniform at different temperature stages: It only takes 3 to 5 minutes for a wafer to cool from 100°C to 70°C, but it takes 15 to 20 minutes for a wafer to cool from 70°C to below 25°C. The uneven cooling rate will affect the quality of the wafer.

[0032] 3) Low overall cooling efficiency: Generally, the annealing chamber can only anneal two wafers at the same time. After the annealing is completed, the wafers need to wait in the chamber for all wafers to complete the reaction before the chamber can be vented for cooling. The waiting time is too long, which reduces the overall cooling efficiency.

[0033] 4) Non-vacuum cooling processes may cause the growth of metal layers or metal oxide layers on the surface of copper vias.

[0034] The application provides a closed sample loading chamber, comprising: a chamber, the chamber comprising a cooling area and a containing area, the cooling area and the containing area being separated by at least one radiation reflection plate; at least one temperature control plate, the temperature control plate being arranged on the side of the cooling area away from the radiation reflection plate, the cooling area being used to absorb the heat radiation of a target sample when the target sample is placed in the cooling area.

[0035] The closed sample loading chamber provided by the application cools the target sample by heat radiation, a single cooling area can cool only one target sample at a time, and the uniformity of cooling of different regions of the target sample is ensured; the chamber is always in a vacuum state during the cooling process, and the growth of a metal oxide layer caused by the introduction of gas can be avoided when the wafer is cooled; when used with a wafer annealing device, the closed sample loading chamber can cool the wafer after the annealing process in real time, and the wafer does not need to wait for the completion of the annealing process, and the total cooling efficiency is improved.

[0036] The closed sample loading chamber provided by the application will be described in detail below in combination with specific embodiments and the accompanying drawings.

[0037] Reference Figure 2 The application provides a closed sample loading chamber, which can be used with a wafer annealing device and a wafer transfer device to cool the wafer after the annealing process.

[0038] The closed sample loading chamber provided by the application comprises a chamber 100, the chamber 100 comprising a cooling area 110 and a containing area 120, the cooling area 110 and the containing area 120 being separated by at least one radiation reflection plate 130. The closed sample loading chamber further comprises at least one temperature control plate 140, the temperature control plate being arranged on the side of the cooling area 110 away from the radiation reflection plate 130, the cooling area 110 being used to absorb the heat radiation of a target sample when the target sample is placed in the cooling area 110.

[0039] When the closed sample loading chamber is used to cool the wafer after the annealing process, the wafer after the annealing process is placed in the cooling area 110, heat is transferred to the temperature control plate 140 by heat radiation, and the cooling of the wafer is realized. The wafer after the cooling is placed in the containing area 120 by a conveying device 20 (for example, a wafer transfer device).

[0040] The cooling area 110 cools the target sample by heat radiation transmission, can realize full vacuum state of the chamber 100 in the cooling process, avoids the introduction of impurity gas in the cooling process compared with the cooling method of heat convection, can greatly reduce the growth of the metal surface oxidation layer in the wafer during the cooling of the wafer, and the cooling method of heat radiation transmission can uniformly cool different regions of the wafer compared with heat convection, thereby improving the wafer yield.

[0041] The single wafer after annealing is cooled by heat radiation, the cooling efficiency is high, the cooling time of the single wafer is less than the annealing time of the single wafer, and when a batch of wafers are annealed and cooled, the wafer after annealing can be cooled without waiting. Compared with the prior art of closing the sample loading chamber and waiting for all the wafers to complete annealing before cooling the wafers, the cooling total efficiency of the batch of wafers is improved, and the problem of uneven cooling rate of different wafers caused by different wafer placement areas is also avoided.

[0042] In some embodiments, the accommodation area 120 is arranged in the middle of the chamber 100, and the cooling area 110 is arranged on both sides of the accommodation area 120, and the temperature control plate 140 is arranged at the top and bottom ends of the chamber 100.

[0043] The wafer annealing device in the prior art generally anneals two wafers at the same time. The cooling area 110 is arranged on both sides of the accommodation area 120, and each cooling area 110 cools a single wafer, which can better match the wafer annealing device in the prior art and improve the total efficiency of wafer cooling.

[0044] In some embodiments, at least one first clamping groove 111 is arranged on the inner wall of the chamber 100 in the cooling area 110, and a plurality of second clamping grooves 121 are arranged on the inner wall of the chamber 100 in the cooling area 110, and the first clamping groove 111 and the second clamping groove 121 are used for clamping the target sample.

[0045] In some embodiments, the distance between the first clamping groove 111 and the nearest radiation reflection plate 130 is 3-5 cm, for example, 3 cm, 4 cm or 5 cm; and / or the distance between the first clamping groove 111 and the temperature control plate 140 is 3-5 cm, for example, 3 cm, 4 cm or 5 cm.

[0046] In some embodiments, the distance between the second clamping groove 121 close to the radiation reflection plate 130 and the radiation reflection plate 130 is 3-5 cm, for example, 3 cm, 4 cm or 5 cm.

[0047] In some embodiments, the number of the second clamping slots 121 is 25.

[0048] In some embodiments, the chamber 100 is provided with at least one openable chamber door (not shown in the figure) for the target sample to enter or exit the chamber 100.

[0049] In some embodiments, the chamber 100 is further provided with an exhaust port 150 for connecting a negative pressure device 160, such as a vacuum pump, to vacuumize the inside of the chamber 100.

[0050] During the annealing and cooling of the batch of wafers, the inside of the chamber 100 is in a vacuum state before all the wafers are cooled down to avoid the growth of the oxide layer in the wafers. After all the wafers are cooled down, the inside of the chamber 100 ends the vacuum state to facilitate the transfer of the wafers to a wafer box under normal pressure.

[0051] In some embodiments, the radiation absorption coefficient of the radiation reflection plate 130 is less than or equal to 0.002, so that the amount of heat radiation absorbed by the reflection plate is controlled to be less than 4% of the amount of heat radiation absorbed by the temperature control plate 140. In some embodiments, the radiation reflection plate 130 is a pure white SiO2 plate.

[0052] The low radiation absorption coefficient allows the radiation reflection plate 130 to reflect the heat radiation from the target sample into the cooling area 110, reducing the heat exchange between the cooling area 110 and the holding area 120.

[0053] In some embodiments, the number of the radiation reflection plates 130 between the adjacent cooling area 110 and the holding area 120 is two, and the distance between the adjacent radiation reflection plates 130 is 1-3 cm, such as 1 cm, 2 cm or 3 cm.

[0054] In some embodiments, referring to Figure 3 , the temperature control plate 140 includes a plate body 141, a liquid cooling pipe 142, a heating resistance wire 143 and at least one temperature detector 144.

[0055] The liquid cooling pipe 142 and the heating resistance wire 143 can cool or heat the plate body 141 to regulate the temperature of the plate body 141, thereby regulating the temperature difference between the temperature control plate and the target sample, adjusting the heat transfer efficiency between the target sample and the temperature control plate, and thus regulating the cooling rate of the target sample.

[0056] In some embodiments, the blackness of the side of the plate body 141 facing the target sample is greater than or equal to 0.9, and in some embodiments, the material of the plate body 141 comprises a metal, such as an aluminum alloy, and the side surface of the plate body 141 facing the target sample is provided with an uneven black coating.

[0057] The blackness of the side of the plate body 141 facing the target sample is greater than or equal to 0.9, which can make the plate body 141 absorb as much heat radiation from the target sample as possible. The material of the plate body 141 is provided as a metal material, which facilitates the rapid conduction of heat inside the plate body 141 and facilitates the heating and cooling of the plate body 141.

[0058] In some embodiments, the liquid cooling pipeline 142 passes through the inside of the plate body 141 to reduce the temperature of the plate body 141.

[0059] In some embodiments, referring to Figure 2 , the liquid cooling pipeline 142 further comprises a pump 1421, a first liquid flow meter 1422, a refrigeration device 1423, and a liquid phase temperature detector 1424 arranged in sequence from the input end of the liquid cooling pipeline 142. The pump 1421 provides power for the flow of the cooling liquid in the liquid cooling pipeline 142; the first liquid flow meter 1422 is used to adjust the flow of the cooling liquid in the liquid delivery pipeline; the refrigeration device 1423 is used to cool the cooling liquid; and the liquid phase temperature detector 1424 is used to detect the temperature of the cooling liquid. The arrow in the figure shows the flow direction of the liquid in the liquid cooling pipeline 142.

[0060] In some embodiments, the liquid cooling pipeline 142 is further provided with a switch 1425 for controlling the opening and closing of the liquid cooling pipeline 142.

[0061] In some embodiments, the liquid cooling pipeline 142 is further provided with a manual adjustment valve 1426 arranged between the pump 1421 and the liquid flow meter for manually adjusting the flow of the cooling liquid in the liquid cooling pipeline 142.

[0062] In some embodiments, the refrigeration device 1423 is a process water cooling system (PCW) with a temperature of 5-7℃.

[0063] Specifically, referring to Figure 4In some embodiments, the cooling device 1423 comprises a liquid phase transmission pipe 1423a, a heat dissipation pipe 1423b, and a coolant (not shown in the figure), which circulates in the liquid phase transmission pipe 1423a and the heat dissipation pipe 1423b, is in liquid state in the liquid phase transmission pipe 1423a, is in gaseous state in the heat dissipation pipe 1423b, and absorbs heat when changing from liquid state to gaseous state, thereby cooling the environment near the heat dissipation pipe 1423b.

[0064] In some embodiments, the input end of the liquid phase transmission pipe 1423a is connected with a condenser 1423c, which is used to liquefy the coolant in gaseous state, so that the coolant is transmitted in the liquid phase transmission pipe 1423a in liquid state; the output end of the liquid phase transmission pipe 1423a is connected with an expansion valve 1423d, which is used to gasify the coolant in liquid state.

[0065] In some embodiments, the liquid phase transmission pipe 1423a is provided with a second liquid flow meter 1423e between the input end and the output end, which is used to adjust the flow of the coolant in the liquid phase transmission pipe 1423a.

[0066] In some embodiments, the output end of the liquid phase transmission pipe 1423a is multiple, and each of the multiple output ends of the liquid phase transmission pipe 1423a is provided with a flow adjusting valve 1423f, which is used to independently adjust the flow of the coolant in each output end.

[0067] In some embodiments, the heat dissipation pipe 1423b partially surrounds the liquid cooling pipe 142, and is used to absorb heat from the liquid cooling pipe 142.

[0068] The input end of the heat dissipation pipe 1423b is connected with the liquid phase transmission pipe 1423a through the expansion valve 1423d.

[0069] In some embodiments, the input end of the heat dissipation pipe 1423b is multiple, and each of the multiple input ends of the heat dissipation pipe 1423b surrounds the liquid cooling pipe 142, thereby increasing the heat transfer area with the liquid cooling pipe 142 and improving the cooling effect on the liquid cooling pipe 142.

[0070] In some embodiments, the output end of the heat dissipation pipe 1423b is connected with the liquid phase transmission pipe 1423a through the condenser 1423c.

[0071] In some embodiments, a mass flow meter 1423g and a compressor 1423h are sequentially arranged between the input end and the output end of the heat dissipation pipe 1423b. The mass flow meter 1423g is used to control the flow of the coolant in gaseous form in the heat dissipation pipe 1423b. The compressor 1423h is used to provide power for the flow of the coolant in gaseous form.

[0072] In some embodiments, a heating resistor 143 is arranged inside the plate body 141 to increase the temperature of the plate body 141.

[0073] The temperature detector 144 is used to detect the temperature of the plate body 141. In some embodiments, the number of temperature detectors is two, and they are arranged along the diagonal of the plate body 141.

[0074] In some embodiments, the closed sample loading chamber further comprises at least one infrared thermometer 170 arranged in the cooling area 110 to measure the temperature of the target sample located in the cooling area 110. The number of infrared thermometers 170 matches the number of cooling areas 110.

[0075] In some embodiments, since the infrared thermometer 170 cannot make the rays orthogonal to the surface of the target sample, the infrared thermometer 170 is calibrated for temperature compensation at room temperature by comparing the display temperature of the temperature detector 144 and the detection temperature of the infrared thermometer 170.

[0076] In some embodiments, the closed sample loading chamber further comprises a controller 180 electrically connected to the first liquid flow meter 1422, the refrigeration device, the heating resistor 143, the temperature detector 144, and the infrared thermometer 170. The controller 180 is used to obtain the temperature of the plate body 141 and the temperature of the target sample and to regulate the flow of the cooling liquid in the liquid cooling pipe 142 and the power of the heating resistor 143 according to the temperature difference between the target sample and the plate body 141.

[0077] For example, when the temperature difference between the target sample and the plate body 141 is too large, causing the cooling rate of the target sample to be too fast, the controller 180 controls the first liquid flow meter 1422 to reduce the flow of the cooling liquid and causes the heating resistor 143 to be in a heating state, so as to reduce the temperature difference between the plate body 141 and the target sample and to make the cooling rate of the target sample within an ideal range.

[0078] When the temperature difference between the target sample and the plate body 141 is too small, resulting in a too slow cooling rate of the target sample, the controller 180 controls the first liquid flow meter 1422 to increase the flow rate of the cooling liquid and the heating resistance wire 143 to be in a non-heating state, so as to increase the temperature difference between the plate body 141 and the target sample, and make the cooling rate of the target sample in the ideal range.

[0079] In some embodiments, the controller 180 is also electrically connected with the conveying device 20, for controlling the transfer of the target sample between the inside and outside of the chamber 100.

[0080] For example, when the wafer is completed after annealing, the controller 180 controls the conveying device 20 to transfer the wafer from the annealing device to the cooling area 110 of the chamber 100; when the wafer is cooled to a set temperature, for example, 25℃, in the cooling area 110, the controller 180 controls the conveying device 20 to move the wafer out of the chamber 100 and to the accommodation area 120 of the chamber 100 for waiting; when all the wafers are cooled and placed in the accommodation area 120, the controller 180 controls the conveying device 20 to transfer the wafer to a wafer box.

[0081] In some embodiments, the controller 180 controls the cooling process of the target sample in the closed sample loading chamber as follows:

[0082] The inside of the chamber 100 is vacuumized by the negative pressure device, and the target sample is placed in the cooling area 110 for cooling in a vacuum state. When the target sample is cooled to a set temperature, the controller 180 controls the conveying device 20 to be transferred to the accommodation area 120. When all the target samples are cooled, the negative pressure device is closed, the inside of the chamber 100 is restored to normal pressure, and the target sample is removed from the accommodation area 120.

[0083] The closed sample loading chamber provided by the present application has the following beneficial effects, but is not limited to the following:

[0084] The present application provides a closed sample loading chamber, comprising: a chamber, the chamber comprising a cooling area and an accommodation area, the cooling area and the accommodation area being separated by at least one radiation reflection plate; at least one temperature control plate, the temperature control plate being arranged on the side of the cooling area away from the radiation reflection plate, and the cooling area being used to absorb the heat radiation of the target sample when the target sample is placed.

[0085] The closed sample loading chamber cools the target sample by heat radiation, a single cooling area can only cool one target sample at a time, ensuring the uniformity of the cooling of different areas of the target sample; the chamber is always in a vacuum state during the cooling process, which can avoid the growth of metal oxide layers caused by the introduction of gas when cooling the wafer; when used with a wafer annealing process equipment, the closed sample loading chamber can cool the wafer after the annealing process in real time, without waiting for all the wafers to complete the annealing process, improving the overall cooling efficiency.

[0086] It should be noted that different embodiments can produce different beneficial effects, and in different embodiments, the beneficial effects that can be produced can be any one or a combination of the above, or any other beneficial effect that can be obtained.

[0087] The above has described the basic concept, and it is obvious that the above detailed disclosure is only as an example for those skilled in the art, and does not constitute a limitation on the present application. Although it is not explicitly stated here, those skilled in the art can make various modifications, improvements and corrections to the present application. Such modifications, improvements and corrections are suggested in the present application, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of the present application.

[0088] It should be noted that in the description of the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" should be understood in a broad sense, for example, it can be fixedly connected, or it can be detachably connected, or it can be integrated; it can be mechanical connection, or electrical connection; it can be rotary connection, or sliding connection; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood in conjunction with the specific circumstances.

[0089] In addition, when the terms "first", "second", "third" and the like are used in the description of the present application to describe various features, these terms are only used to distinguish these features, and cannot be understood as indicating or implying the relevance between the features, the relative importance of the features, or implicitly indicating the number of the indicated features.

[0090] In addition, the description herein makes reference to idealized illustrative cross-sectional and / or plan and / or elevational views. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and / or tolerances, are to be expected. Thus, examples of the embodiments should not be construed as limited to the precise shapes illustrated herein but are to include deviations in shapes that result from such

[0091] Also, the use of "an" or "the" to refer to an element or class of elements, along with the

[0092] Similarly, it is to be noted, that the use of certain terms in various places in the specification is merely intended to convey a certain example embodiment or implementation. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present disclosure, and will not be interpreted in an overly literal or overly formal sense unless expressly so defined herein.

[0093] Finally, it should be noted that the embodiments described herein are merely examples of embodiments of the application. Other variations having essentially the same structure and function but different values for parameters can also be within the scope of the application. Therefore, the alternative configurations of the embodiments of the application, which are disclosed herein as examples and not limitation, are considered to be within the scope of the teachings of the present application. Accordingly, the embodiments of the application are not to be restricted, except in light of the attached claims and their equivalents.

Claims

1. An enclosed sample loading chamber, characterized in that, The application relates to a chamber for target sample testing, comprising: a chamber, which comprises a cooling area and a containing area, and the cooling area and the containing area are separated by at least one radiation reflection plate; at least one temperature control plate, which is arranged on the side of the cooling area away from the radiation reflection plate, and the cooling area is used for absorbing the heat radiation of the target sample when the target sample is placed. The containing area is arranged in the middle of the chamber, the cooling area is arranged on both sides of the containing area, and the temperature control plate is arranged at the top and bottom ends of the chamber.

2. The closed sample loading chamber of claim 1, wherein, The temperature control plate comprises:

3. The closed sample loading chamber of claim 1, wherein, a plate body, the blackness of the side of the plate body facing the target sample is greater than or equal to 0.9; a liquid cooling pipeline, which passes through the inside of the plate body, is used for reducing the temperature of the plate body; a heating resistance wire, which is arranged in the inside of the plate body, is used for increasing the temperature of the plate body; and at least one temperature detector, which is used for detecting the temperature of the plate body. The liquid cooling pipeline further comprises a pump, a first liquid flow meter, a refrigeration device and a liquid phase temperature detector arranged in sequence from the input end of the liquid cooling pipeline; the pump provides power for the flow of the cooling liquid in the liquid cooling pipeline; the first liquid flow meter is used for adjusting the flow of the cooling liquid in the liquid cooling pipeline; the refrigeration device is used for cooling the cooling liquid; and the liquid phase temperature detector is used for detecting the temperature of the cooling liquid.

4. The closed sample loading chamber of claim 3, wherein, The refrigeration device comprises:

5. The closed sample loading chamber of claim 4, wherein, a liquid phase transmission pipeline, the input end of the liquid phase transmission pipeline is connected with a condenser, the output end of the liquid phase transmission pipeline is connected with an expansion valve, and the liquid phase transmission pipeline is provided with a second liquid flow meter between the input end and the output end; a heat dissipation pipeline, which partially surrounds the liquid cooling pipeline, is used for absorbing heat from the liquid cooling pipeline; the input end of the heat dissipation pipeline is connected with the liquid phase transmission pipeline through the expansion valve, and the output end of the heat dissipation pipeline is connected with the liquid phase transmission pipeline through the condenser; and the input end and the output end of the heat dissipation pipeline are further provided with a mass flow meter and a compressor in sequence; and a coolant, which circulates in the liquid phase transmission pipeline and the heat dissipation pipeline, is in a liquid state in the liquid phase transmission pipeline and is in a gaseous state in the heat dissipation pipeline. Further comprising at least one infrared temperature detector, which is arranged in the cooling area and is used for measuring the temperature of the target sample located in the cooling area.

6. The closed sample loading chamber of claim 5, wherein, Further comprising a controller, which is electrically connected with the first liquid flow meter, the refrigeration device, the heating resistance wire, the temperature detector and the infrared temperature detector, and is used for acquiring the temperature of the plate body and the temperature of the target sample and regulating the flow of the cooling liquid in the liquid cooling pipeline and the power of the heating resistance wire according to the temperature difference between the target sample and the plate body.

7. The closed sample loading chamber of claim 6, wherein, The controller is further electrically connected with a conveying device and is used for controlling the transfer of the target sample between the inside and the outside of the chamber.

8. The closed sample loading chamber of claim 7, wherein, At least one first clamping groove is arranged on the inner wall of the chamber in the cooling area, and the first clamping groove is used for clamping the target sample.

9. The closed sample loading chamber of claim 1, wherein, The radiation absorption coefficient of the radiation reflection plate is less than or equal to 0.

002.

10. The closed sample loading chamber of claim 1, wherein, ​

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