Multi-AMB spliced novel power module

Abstract

The utility model relates to a multi-AMB splicing type novel power module, which comprises a heat dissipation bottom plate, an insulating ceramic substrate and a plurality of AMB copper layers, the upper surface of the heat dissipation bottom plate is provided with an accommodating groove, the lower surface of the heat dissipation bottom plate is provided with an enclosure frame, a heat dissipation part is arranged in the enclosure frame, the AMB copper layers are attached to the upper and lower surfaces of the insulating ceramic substrate, and the AMB copper layers are arranged at intervals. According to the power module, the insulation ceramic substrates and the multiple AMB copper layers are installed in the containing groove, the multiple AMB copper layers are carried through one insulation ceramic substrate, the distance between the insulation ceramic substrates with the AMB copper layers is 0 mm, the size of the AMB insulation ceramic substrates is greatly reduced, and therefore the size of the power module is reduced, the AMB insulation ceramic substrates are located in the containing groove, and the size of the power module is reduced. The heat dissipation parts are closer, the size is reduced, and the heat dissipation performance is improved.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of semiconductor instrument, concretely relates to a new power module of multi-AMB splicing. BACKGROUND

[0002] The full-bridge power module on the market at present is big in size, heavy in quality, occupies much space in the motor controller, the longitudinal distance between the heat dissipation bottom plate of the power module and the Sic chip is far, the actual working heat dissipates slowly, the working junction temperature of the module cannot be reduced, and the bonding mode of the source of the power module chip brings adverse effects (such as stray inductance caused by current interference, module failure caused by material stress) and other problems. The existing full-bridge power module cannot be miniaturized, and the Sic chip cannot exert its maximum advantage. SUMMARY

[0003] In view of the deficiencies of the prior art, the technical problem to be solved by the utility model is to provide a new power module of multi-AMB splicing, which is smaller in size and better in heat dissipation performance.

[0004] To solve the above technical problems, the utility model adopts the technical scheme of a new power module of multi-AMB splicing, which comprises a heat dissipation bottom plate, an insulating ceramic substrate and a plurality of AMB copper layers.

[0005] Further, the plurality of AMB copper layers are arranged in a single row at equal intervals.

[0006] Further, the AMB copper layer comprises an upper copper layer and a lower copper layer, and the upper copper layer and the lower copper layer are respectively attached to the upper surface and the lower surface of the insulating ceramic substrate and correspond in position.

[0007] Further, the upper copper layer is provided with a chip, an FPC flexible circuit board and a Pin needle.

[0008] Further, the upper copper layer is further provided with a lead frame, and the lead frame is used to be connected with an external component.

[0009] Further, the new power module further comprises a plastic sealing layer, and the plastic sealing layer is used to block the communication between the insulating ceramic substrate and the plurality of AMB copper layers and the outside.

[0010] Further, the heat dissipation component is a plurality of metal heat dissipation fins arranged at intervals.

[0011] Further, the metal heat dissipation fins are in a wavy shape.

[0012] Further, the distance between the groove bottom of the accommodating groove and the frame bottom of the surrounding frame is less than 3mm.

[0013] Compared with the prior art, the utility model has the following beneficial effects:

[0014] 1. The AMB insulating ceramic substrate (that is, the insulating ceramic substrate with the AMB copper layer attached to the surface) in the prior art is provided with one AMB copper layer on one insulating ceramic substrate, and multiple AMB insulating ceramic substrates are needed when the power module is installed, so that the multiple AMB insulating ceramic substrates need to be arranged at intervals, and the interval distance is 2.5-3mm, if the interval is not arranged, the adjacent AMB insulating ceramic substrates will be in contact in the welding process, resulting in abnormal welding, and the utility model provides a multiple-AMB splicing type novel power module, multiple AMB copper layers are arranged on one insulating ceramic substrate, and the insulating ceramic substrate carries multiple AMB copper layers, and the distance between each insulating ceramic substrate with the AMB copper layer is 0mm, so that the size of the AMB insulating ceramic substrate (the insulating ceramic substrate region with the AMB copper layer attached) is greatly reduced, thereby reducing the size of the power module, and compared with the heat dissipation bottom plate of the existing module, the heat dissipation bottom plate in the utility model is provided with grooves (accommodating grooves) on the surface, and the AMB insulating ceramic substrate is built-in the accommodating grooves, so that the weight and volume of the module are reduced, and the distance between the AMB insulating ceramic substrate and the heat dissipation fins below the heat dissipation bottom plate is shortened, the module stray inductance is reduced, and the performance failure risk caused by the Cilp frame or copper frame stress is greatly reduced.

[0015] 2. The grooves (accommodating grooves) are arranged on the surface of the heat dissipation bottom plate, the AMB insulating ceramic substrate is inlaid in the accommodating grooves, the weight and volume of the overall module are reduced, the distance between the AMB insulating ceramic substrate and the heat dissipation fins below the heat dissipation bottom plate is shortened, the module junction temperature is reduced, and the heat dissipation performance is better.

[0016] 3. The overall size of the module made by the utility model is 146*59*11mm, and the overall size of the existing module is 152*92*14mm, and under the condition that the actual functions are consistent, the multiple-AMB splicing type novel power module mentioned in the utility model has smaller size and better heat dissipation performance. BRIEF DESCRIPTION OF DRAWINGS

[0017] Figure 1 It is a three-dimensional structure schematic view of the utility model a multiple-AMB splicing type novel power module.

[0018] Figure 2 is a top view structural schematic diagram after the plastic sealing layer is hidden in the utility model;

[0019] Figure 3 is another direction of the utility model three-dimensional structure schematic diagram;

[0020] Figure 4 is the three-dimensional structure schematic diagram of the insulating ceramic substrate and AMB copper layer in the utility model;

[0021] Figure 5 is the three-dimensional structure schematic diagram of the heat dissipation bottom plate in the utility model;

[0022] Figure 6 is the side view partial enlarged view of the insulating ceramic substrate and AMB copper layer in the utility model.

[0023] Marked in the figure: 1, heat dissipation bottom plate;11, containing groove;12, frame;121, heat dissipation fin;2, insulating ceramic substrate;3, AMB copper layer;31, upper copper layer;32, lower copper layer;4, Pin needle;5, FPC flexible circuit board;6, chip;7, lead frame;8, plastic sealing layer. DETAILED DESCRIPTION

[0024] In order to let the above-mentioned features and advantages of the utility model more obvious and easy to understand, the following specific examples are raised, and the detailed description is as follows in conjunction with the drawings.

[0025] Example 1

[0026] As shown in Figures 1-6 , the embodiment provides a multi-AMB splicing type novel power module, which comprises a heat dissipation bottom plate 1, an insulating ceramic substrate 2, a plurality of AMB copper layers 3 and a plastic sealing layer 8.

[0027] The AMB copper layer 3 is attached to the upper and lower surfaces of the insulating ceramic substrate 2, and three AMB copper layers 3 are arranged at intervals. Specifically, the AMB copper layer 3 comprises an upper copper layer 31 and a lower copper layer 32, and the upper copper layer 31 and the lower copper layer 32 are respectively attached to the upper surface and the lower surface of the insulating ceramic substrate 2 and the upper and lower positions correspond. The number of AMB copper layers 3 can be set according to actual needs, and the number of AMB copper layers 3 in the module of the present scheme is 3, which is the best.

[0028] The area of the insulating ceramic substrate 2 to which the upper copper layer 31 and the lower copper layer 32 are attached is referred to as an AMB insulating ceramic substrate, and the existing AMB insulating ceramic substrate is monolithic, with only one AMB copper layer 3 on each piece. When three AMB insulating ceramic substrates are needed for the module, the prior art is implemented by spacing the three AMB insulating ceramic substrates apart, with a spacing distance of 2.5-3 mm. If no spacing is performed, during the soldering process, the adjacent AMB insulating ceramic substrates will come into contact with each other, resulting in abnormal soldering. In the present embodiment, three AMB copper layers 3 are provided on one insulating ceramic substrate 2, and multiple AMB copper layers 3 are carried by one insulating ceramic substrate 2, with a distance of 0 mm between each insulating ceramic substrate 2 with an AMB copper layer 3, greatly reducing the size of the AMB insulating ceramic substrate.

[0029] The upper copper layer 31 is provided with a chip 6, an FPC flexible circuit board 5, and a Pin needle 4 on the surface. The chip 6 is a Sic-MOS chip, specifically a third-generation wide-bandgap semiconductor chip. The Pin needle 4 is used to lead out the electrical signals of the module. The FPC flexible circuit board 5 has the characteristic of stress self-adaptation. The upper copper layer 31 is also provided with a lead frame 7 on the surface. The lead frame 7 is used to connect with external components. Specifically, the lead frame 7 is made of full copper or full copper gold plating, etc. In the present embodiment, a lead frame 7 made of full copper is selected. The lead frame 7 serves as an electrical terminal and leads out the electrical performance of the module to connect with external components.

[0030] Compared with the Cilp frame or copper frame on the existing module, the FPC flexible circuit board 5 is used in the present embodiment, which maximally reduces the performance failure risk caused by the stress of the Cilp frame or copper frame. Compared with the bonding wire on the existing module, the stray inductance of the module is reduced.

[0031] The upper surface of the heat dissipation bottom plate 1 has a containing groove 11, and the AMB insulating ceramic substrate (the insulating ceramic substrate 2 to which the AMB copper layer 3 is attached) is installed in the containing groove 11. The lower surface of the heat dissipation bottom plate 1 forms a surrounding frame 12, and the surrounding frame 12 is provided with a heat dissipation component. Specifically, the heat dissipation component is a plurality of spaced metal heat dissipation fins 121. The number of metal heat dissipation fins 121 is 5 in the present embodiment, and the metal heat dissipation fins 121 are in a wave shape. The metal heat dissipation fins 121 are made of a metal with good heat dissipation performance, such as copper sheet, etc.

[0032] The distance between the AMB insulating ceramic substrate and the heat dissipation component (such as the heat dissipation fin 121 in the present solution) on the heat dissipation base plate 1 in the prior art module is generally 3mm, and the present solution greatly reduces the size of the AMB insulating ceramic substrate due to the three-spliced AMB copper layers 3 on the same insulating ceramic substrate 2, so that the heat dissipation is more concentrated, and the accommodating groove 11 is arranged on the heat dissipation base plate 1, so that the distance between the AMB insulating ceramic substrate and the heat dissipation fin 121 is reduced, thereby greatly improving the heat dissipation performance of the whole module.

[0033] Moreover, the overall size of the module made by the present embodiment is 146*59*11mm, and the overall size of the prior art module is 152*92*14mm. In the case of the same actual function, the multi-AMB spliced novel power module in the present embodiment has smaller size and better heat dissipation performance.

[0034] The plastic sealing layer 8 is used for blocking the communication between the insulating ceramic substrate 2 and the three AMB copper layers 3 and the outside, and specifically, the plastic sealing layer 8 is made of epoxy resin material.

[0035] The basic principle and main features of the present application and the advantages of the present application are shown and described above, and those skilled in the art should understand that the present application is not limited by the above embodiments, and the above embodiments and the description in the specification are only to illustrate the principle of the present application, and various changes and improvements can be made to the present application without departing from the spirit and scope of the present application, and these changes and improvements all fall within the scope of the present application, and the scope of protection of the present application is defined by the appended claims and their equivalents.

Claims

1. A novel multi-AMB splicing power module, characterized in that: The device includes a heat dissipation base plate, an insulating ceramic substrate, and multiple AMB copper layers. The upper surface of the heat dissipation base plate has a receiving groove, and the lower surface of the heat dissipation base plate forms a frame. A heat dissipation component is disposed within the frame. The AMB copper layers are attached to the upper and lower surfaces of the insulating ceramic substrate, and the multiple AMB copper layers are spaced apart. The insulating ceramic substrate and the multiple AMB copper layers are installed in the receiving groove.

2. The novel multi-AMB splicing power module according to claim 1, characterized in that: Multiple AMB copper layers are arranged in a single row at equal intervals.

3. The novel multi-AMB splicing power module according to claim 1, characterized in that: The AMB copper layer includes an upper copper layer and a lower copper layer, which are respectively attached to the upper and lower surfaces of the insulating ceramic substrate and are positioned opposite each other.

4. A novel multi-AMB splicing power module according to claim 3, characterized in that: The surface of the upper copper layer is provided with a chip, an FPC flexible circuit board, and pins.

5. A novel multi-AMB splicing power module according to claim 4, characterized in that: The surface of the upper copper layer is also provided with a lead frame, which is used to connect to an external component.

6. A novel multi-AMB splicing power module according to claim 1, characterized in that: The novel power module also includes a molding layer that serves to prevent the insulating ceramic substrate and multiple AMB copper layers from communicating with the outside.

7. A novel multi-AMB splicing power module according to claim 1, characterized in that: The heat dissipation component consists of multiple spaced-apart metal heat sinks.

8. A novel multi-AMB splicing power module according to claim 7, characterized in that: The metal heat sink is wavy.

9. A novel multi-AMB splicing power module according to claim 1, characterized in that: The distance between the bottom of the receiving groove and the bottom of the frame is less than 3mm.

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