Vapor deposition equipment with exhaust device

Abstract

The utility model provides vapor deposition equipment with an exhaust device, and relates to the technical field of semiconductor manufacturing. Comprising a reaction chamber and an exhaust pipe arranged at the bottom of the reaction chamber. A sinking groove body is arranged at the edge of the inner bottom wall of the reaction chamber to gather tail gas, one side wall of the sinking groove body is intersected with the inner side wall of the bottom of the reaction chamber, and the inner side wall of the bottom of the reaction chamber is smoothly connected with the bottom wall of the sinking groove body through an arc-shaped chamfer surface; the exhaust pipe is inclined to the bottom of the reaction chamber, one end of the exhaust pipe intersects with the inner side wall of the bottom of the reaction chamber and the inner surface of the sinking tank body, and the intersection of the exhaust pipe and the sinking tank body is not higher than the intersection of the arc-shaped chamfer surface and the bottom wall of the sinking tank body, so that tail gas can be smoothly exhausted; dead angles of in-situ flow of gas flow formed at the junction of the exhaust pipe and the bottom of the reaction chamber and near the junction are reduced or avoided, and blockage points are reduced or avoided.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor manufacturing, in particular to a vapor deposition equipment provided with an exhaust device. BACKGROUND

[0002] In the process of semiconductor manufacturing, there is usually a vapor deposition process for wafers. In the prior art vapor deposition equipment, the intersection of the exhaust outlet at the bottom of the reaction chamber and the exhaust pipe connected thereto is prone to form a dead angle for the in-situ flow of gas. Unreacted products, by-products, and other hazardous waste gas particles and dust are prone to accumulate at the intersection of the exhaust outlet at the bottom of the reaction chamber and the exhaust pipe and nearby. After several growth cycles, a blockage point is easily formed, which affects the continuous process production efficiency due to frequent cleaning and maintenance. CONTENT OF THE UTILITY MODEL

[0003] The present application mainly provides a vapor deposition equipment provided with an exhaust device to solve the problem that particles and dust are prone to form a blockage point at the intersection of the exhaust outlet at the bottom of the reaction chamber and the exhaust pipe and nearby.

[0004] The technical solution adopted by the present application to solve the above technical problem is as follows:

[0005] The present application provides a vapor deposition equipment, which comprises a reaction chamber and an exhaust pipe arranged at the bottom of the reaction chamber to exhaust exhaust gas. An inner bottom wall edge of the reaction chamber is provided with a sunken groove body to converge the exhaust gas. One side wall of the sunken groove body intersects with the inner side wall at the bottom of the reaction chamber. The inner side wall at the bottom of the reaction chamber and the bottom wall of the sunken groove body are smoothly connected by an arc chamfer surface. The exhaust pipe is arranged obliquely at the bottom of the reaction chamber. One end of the exhaust pipe intersects with the inner side wall at the bottom of the reaction chamber and the inner surface of the sunken groove body. The intersection of the exhaust pipe and the sunken groove body is not higher than the intersection of the arc chamfer surface and the bottom wall of the sunken groove body.

[0006] Optionally, the number of the exhaust pipes is at least 2, and each of the exhaust pipes is arranged around the central axis of the reaction chamber.

[0007] Optionally, the exhaust pipe extends in a direction away from the central axis of the reaction chamber.

[0008] Optionally, the inner diameter of the exhaust pipe increases in a direction away from the reaction chamber.

[0009] Optionally, the equipment further comprises a collection device for intercepting at least part of the solid substances in the exhaust gas. The other end of the exhaust pipe penetrates the side wall of the collection device and communicates with the collection device.

[0010] Optionally, the number of exhaust pipes is at least two, and the number of collecting devices is at least two and is arranged one-to-one corresponding to each exhaust pipe, and each collecting device is arranged around the central axis of the reaction chamber.

[0011] Optionally, the gas outlet pipe is further provided, and one end of the gas outlet pipe penetrates through the side wall of the collecting device and communicates with the collecting device.

[0012] Optionally, the number of exhaust pipes is at least two, and the number of gas outlet pipes is at least two and is arranged one-to-one corresponding to each collecting device, and each gas outlet pipe is inclined to the central axis of the reaction chamber and extends towards the central axis of the reaction chamber.

[0013] Optionally, at least one of the gas outlet pipes comprises a telescopic pipe structure, which is close to the collecting device and is used to flexibly adjust the relative position between the gas outlet pipe and the corresponding collecting device.

[0014] Optionally, the intersection pipe and the tail gas treatment device are further provided, each gas outlet pipe is connected to one end of the intersection pipe and communicates with the intersection pipe, and the other end of the intersection pipe communicates with the tail gas treatment device.

[0015] The gas phase deposition equipment provided by the present application has the beneficial effects that: a sunken groove body is arranged at the edge of the bottom wall of the reaction chamber to collect tail gas, one side wall of the sunken groove body intersects with the inner side wall of the reaction chamber, and the inner side wall of the reaction chamber and the bottom wall of the sunken groove body are smoothly connected by an arc chamfer surface; the exhaust pipe is arranged to be inclined to the bottom of the reaction chamber, one end of the exhaust pipe intersects with the inner side wall of the bottom of the reaction chamber and the inner surface of the sunken groove body, and the intersection of the exhaust pipe and the sunken groove body is not higher than the intersection of the arc chamfer surface and the bottom wall of the sunken groove body, so that the tail gas can be smoothly discharged, the dead angle of the in-place flow of the tail gas at the intersection of the exhaust pipe and the bottom of the reaction chamber and the vicinity thereof is reduced or avoided, and the formation of the block point is reduced or avoided. BRIEF DESCRIPTION OF DRAWINGS

[0016] In order to more clearly illustrate the technical solutions of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0017] Figure 1 It is a schematic view of the assembly structure between the bottom of the reaction chamber and the exhaust pipe of the embodiment of the present application.

[0018] Figure 2 It is a schematic view of the assembly structure between the bottom of the reaction chamber and the exhaust pipe of the embodiment of the present application. Figure 1 It is an enlarged schematic view of position A in FIG. 6.

[0019] Figure 3 Structure schematic diagram of a gas deposition device according to an embodiment of the present application.

[0020] Fig. 10 is a reaction chamber; 20 is an exhaust pipe; 30 is a collection device; 40 is an exhaust pipe; 41 is an extension pipe structure; 50 is a junction pipe; 51 is a first interface; 52 is a second interface; 53 is an exhaust port; 60 is an inner side wall; 70 is a sunken groove body; 71 is a bottom wall; 72 is an arc chamfer surface; 80 is a rotary drive assembly.

[0021] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solutions and advantages of the present application clearer, the technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work fall within the scope of protection of the present application.

[0023] It should be noted that all directional indications (such as up, down, left, right, front, back, etc.) in the embodiments of the present application are only used to explain the relative positional relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications will also change accordingly.

[0024] In the present application, unless otherwise explicitly specified and limited, the terms "connection", "fixation" and the like should be understood broadly, for example, "fixation" can be fixed connection, or detachable connection, or integral; can be mechanical connection, or electrical connection; can be direct connection, or indirect connection through an intermediate medium; can be internal connection of two elements or interaction relationship between two elements, unless otherwise explicitly limited. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0025] In addition, if the description of "first", "second" and the like is involved in the embodiments of the present application, the description of "first", "second" and the like is only for the purpose of description, and cannot be understood as indicating or implying the relative importance of the indicated technical features or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can be explicitly or implicitly included at least one of the features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel schemes. For example, "A and / or B" includes A scheme, or B scheme, or A and B scheme. In addition, the technical solutions of each embodiment can be combined with each other, but it must be based on the realization of ordinary skilled in the art. When the combination of technical solutions appears contradictory or unachievable, it should be considered that the combination of technical solutions does not exist and is not within the protection scope required by the present application.

[0026] In the process of semiconductor manufacturing, there is usually a process of vapor deposition on the wafer. The exhaust outlet of the prior art vapor deposition equipment is easy to form a dead angle of in-place flow of gas flow at the intersection of the gas channel connected thereto. Unreacted products, by-products and other hazardous waste gas particles and dust are easy to accumulate at the intersection of the exhaust outlet of the reaction chamber and the exhaust pipe and the vicinity thereof at the bottom of the reaction chamber, and a blockage point is easy to form. In view of the above problems, the embodiments of the present application provide the following technical solutions to overcome the above problems. Figures 1 to 3

[0027] The embodiments of the present application provide a vapor deposition equipment, which comprises a reaction chamber 10 and an exhaust pipe 20 arranged at the bottom surface of the reaction chamber 10 to discharge exhaust gas. The bottom wall edge of the reaction chamber 10 is provided with a sunken groove body 70 to converge the exhaust gas. One side wall of the sunken groove body 70 intersects with the inner side wall 60 of the reaction chamber 10. The inner side wall 60 of the reaction chamber 10 and the bottom wall 71 of the sunken groove body 70 are smoothly connected by an arc chamfer surface 72. The exhaust pipe 20 is arranged at the bottom of the reaction chamber 10 and one end thereof intersects with the inner side wall 60 at the bottom of the reaction chamber 10 and the inner surface of the sunken groove body 70. The intersection of the exhaust pipe 20 and the sunken groove body 70 is not higher than the intersection of the arc chamfer surface 72 and the bottom wall 71 of the sunken groove body 70, so that the exhaust gas can be smoothly discharged, and the dead angle of in-place flow of gas flow at the intersection of the exhaust pipe and the bottom of the reaction chamber and the vicinity thereof is reduced or avoided, thereby reducing or avoiding the formation of a blockage point.

[0028] In some embodiments, the number of exhaust pipes 20 is at least 2. In some specific embodiments, two exhaust pipes 20 are arranged at the bottom of the reaction chamber 10, and the two exhaust pipes 20 are arranged relative to the central axis of the reaction chamber 10.

[0029] In some embodiments, each exhaust pipe 20 is uniformly arranged around the central axis of the reaction chamber 10.

[0030] ​The exhaust pipe 20 is inclinedly arranged at the bottom of the reaction chamber 10 and extends away from the central axis of the reaction chamber 10. Such arrangement makes it less likely to form a dead angle at the intersection of the exhaust pipe 20 and the reaction chamber 10. If the exhaust pipe 20 is arranged vertically at the bottom of the reaction chamber 10, most of the exhaust gas needs to make a large turn to enter the exhaust pipe 20, which makes the exhaust gas easy to swirl at the intersection of the turn and thus forms a vortex, increasing the risk of forming a coking point. The inclined arrangement of the exhaust pipe 20 helps the exhaust gas flow more smoothly along the exhaust pipe 20, reducing the retention and swirling of the exhaust gas at the bottom, and reducing or avoiding the formation of a vortex of the exhaust gas at the intersection of the exhaust pipe 20 and the reaction chamber 10 and its vicinity.

[0031] The plurality of exhaust pipes 20 arranged at the bottom of the reaction chamber 10 can increase the channel for gas exhaust, thereby improving the efficiency of gas exhaust. Such design helps to quickly remove the gas generated inside the reaction chamber 10.

[0032] Through the inclined arrangement and uniform distribution of the plurality of exhaust pipes 20, it is helpful to improve the exhaust efficiency while improving the stability and uniformity of the gas flow in the reaction chamber 10, thereby facilitating to ensure the quality and uniformity of the deposition layer.

[0033] Each exhaust pipe 20 can adjust its inclination angle and direction as needed to adapt to different process requirements. The structural design of the exhaust pipe 20 needs to consider other functional structures, for example Figure 3 The assembly of the rotary drive assembly 80 and the reaction chamber 10 is shown to be able to effectively guide the gas to the exhaust gas treatment system and not to affect the normal operation of these other functional structures. In some specific embodiments, the rotary drive assembly 80 is a magnetic fluid sealing rotary assembly for driving the rotation of the susceptor in the reaction chamber.

[0034] By reducing the gas dead angle and the deposition of the embodiments of the present application, the maintenance requirements of the equipment can be reduced, and the downtime caused by cleaning and maintenance can be reduced. Reducing the deposition of the deposition and the gas dead angle can reduce the risk of equipment failure and improve the safety of the production process.

[0035] In some embodiments, the inner diameter of the exhaust pipe 20 increases in the direction away from the reaction chamber 10. Specifically, the inner diameter of the exhaust pipe 20 increases in the direction away from the reaction chamber 10, which can more effectively improve the exhaust efficiency and reduce the retention time of the gas in the reaction chamber 10.

[0036] The vapor deposition apparatus of some embodiments further comprises a collection device 30 for intercepting at least part of the solid matter in the exhaust gas. It is noted that during the vapor deposition process, unreacted raw material gas, byproducts, and possibly particulate matter, etc. are generated in the reaction chamber 10. The collection device 30 serves to separate at least part of these impurities from the exhaust gas first, reducing the burden of subsequent exhaust gas treatment.

[0037] In some embodiments, the number of collection devices 30 is at least 2, equal to the number of exhaust pipes 20, and each collection device 30 is connected to the end of the exhaust pipe 20 away from the reaction chamber 10, for intercepting at least part of the solid matter in the exhaust gas.

[0038] Specifically, the collection device 30 can be designed to correspond to each exhaust pipe 20, ensuring that the gas discharged from each exhaust pipe 20 is processed by the collection device 30. The collection device 30 can be a filter, a collection tank, or a more complex chemical scrubber, depending on the type of impurities to be removed. The filter material in the collection device 30 can be selected according to the characteristics of the impurities to be removed, for example, a HEPA filter for particulate matter, and activated carbon or a chemical absorbent for chemical gas.

[0039] The collection device 30 can be designed as a vertical or horizontal structure, depending on the space layout and process requirements.

[0040] In some embodiments, the other end of the exhaust pipe penetrates the side wall of the collection device and communicates with the collection device.

[0041] The vapor deposition apparatus of some embodiments further comprises an exhaust pipe 40, which penetrates the side wall of the collection device 30 and communicates with the collection device 30.

[0042] Both the exhaust pipe and the exhaust pipe penetrate the side wall of the collection device, so that at least part of the solid matter can settle at the bottom of the collection device.

[0043] In some embodiments, the number of exhaust pipes 40 is at least 2, equal to the number of collection devices 30, and each exhaust pipe 40 is connected to the collection device 30 one by one, for discharging the gas in the collection device 30. Specifically, each exhaust pipe 40 is connected to one collection device 30 one by one, ensuring that the gas in each collection device 30 can be discharged.

[0044] In some embodiments, the exhaust pipe and the exhaust pipe 40 can be made of stainless steel or other corrosion-resistant and high-temperature-resistant materials to accommodate high-temperature exhaust gas or corrosive exhaust gas.

[0045] In some embodiments, the layout of the gas outlet pipes 40 can be adapted according to the convenience of operation and the requirement of space utilization efficiency.

[0046] In some embodiments, the connection between the gas outlet pipes 40 and the collection devices 30 can adopt flange connection, threaded connection or other sealing connection mode to ensure the air tightness of the connection.

[0047] It can be understood that the main function of the gas outlet pipes 40 is to discharge the tail gas in the collection devices 30 and the small particle size particulate matter that may exist to the rear end (for example, the tail gas treatment device arranged at the rear end).

[0048] In some embodiments, the connection between the gas outlet pipes 40 and the collection devices 30 can adopt flange or other sealing connection mode to ensure the air tightness of the connection and prevent gas leakage. The material of the gas outlet pipes 40 should be selected according to the chemical properties and temperature conditions that may be encountered in the gas deposition process to ensure the corrosion resistance and high temperature resistance of the pipes.

[0049] In some embodiments of the gas deposition device, at least one of the gas outlet pipes 40 is provided with a telescopic pipe structure 41 close to the collection device, which facilitates flexible adjustment of the relative position between the gas outlet pipe 40 and the collection device 30.

[0050] Specifically, the gas outlet pipe 40 of the telescopic pipe structure 41 can dynamically adjust the connection length and angle between the gas outlet pipe 40 and the collection device 30 according to the actual installation conditions and position differences, to ensure the sealing and alignment accuracy between the two. When the number of gas outlet pipes 40 is at least 2, the rear end of each gas outlet pipe is connected to a tail gas treatment device, and other devices such as a rotating device (for example, a magnetic fluid rotating assembly) for driving the rotation of the susceptor in the reaction chamber and a condensing or gas supply pipeline adapted thereto are also installed at the bottom of the reaction chamber, the installation position of each gas outlet pipe and the installation position of each collection device will be limited to a certain extent. By using the telescopic pipe structure 41, the relative position relationship between the gas outlet pipe and the corresponding connected collection device can be flexibly adjusted while ensuring that the connection between the gas outlet pipe 40 and the collection device 30 will not leak due to improper installation caused by the inability to adjust the relative position relationship. The telescopic pipe structure 41 has good sealing performance and can prevent gas leakage through the telescopic pipe structure 41.

[0051] In some embodiments, the number of gas outlet pipes and the number of collection devices are both at least 2 and are one-to-one corresponding, and each of the gas outlet pipes is inclined to the central axis of the reaction chamber and extends toward the central axis of the reaction chamber, which facilitates subsequent connection of each gas outlet pipe to the same converging pipe to discharge tail gas, and the converging pipe can be connected to a tail gas treatment device for unified tail gas treatment.

[0052] In some embodiments, the telescopic pipe structure 41 is a high-temperature-resistant telescopic pipe suitable for high-temperature tail gas.

[0053] In some embodiments, the telescopic tube structure 41 is a corrosion-resistant telescopic tube suitable for the passage of corrosive tail gas.

[0054] In some embodiments, the telescopic tube structure 41 is a high-temperature and corrosion-resistant telescopic tube suitable for the passage of tail gas with both high temperature and corrosion.

[0055] In some embodiments, the gas outlet pipe 40 is a two-segment tube structure, and the telescopic tube structure 41 is sealingly connected to one end of each of the two tube structures and communicates with the other end of each of the two tube structures, and the other end of one of the tube structures communicates with the processing device.

[0056] In some specific embodiments, the connection between the telescopic tube structure 41 and each tube structure can be reinforced by a rubber ring and a center steel ring to further strengthen the sealing relationship, and the outer wall of the connection between the telescopic tube structure 41 and each tube structure can be further provided with a clamp to further strengthen the sealing relationship.

[0057] In some embodiments of the vapor deposition device, the telescopic tube structure 41 is a bellows.

[0058] Specifically, the unique corrugated structure of the bellows provides good flexibility and telescopic properties, which can compensate for the axial, lateral, and angular displacement of the pipeline caused by temperature changes, mechanical vibrations, or installation errors. The bellows can absorb the vibrations and impacts generated by the operation of the device, reducing the impact of these factors on the connection of the pipeline, thereby reducing noise and protecting the connected equipment. The bellows are usually made of high-temperature and corrosion-resistant metal materials such as stainless steel, which can withstand high working pressure and corrosion of various media. The two ends of the bellows are usually equipped with fixed joints to ensure the sealing connection with other equipment or pipelines, preventing gas leakage.

[0059] In embodiments of the present application, the bellows can adapt to the small displacement and vibration in the pipeline system, improving the overall reliability and stability of the pipeline system. Since the bellows can withstand large deformation without damage, the service life of the pipeline system can be extended, and the frequency of maintenance and replacement can be reduced. The telescopic performance of the bellows can effectively prevent rupture or leakage caused by stress concentration in the pipeline, enhancing the safety of the system.

[0060] In some embodiments of the vapor deposition device, the gas outlet pipes converge at one end of the intersection pipe 50 and communicate with the intersection pipe to uniformly transport tail gas into the intersection pipe.

[0061] In some embodiments, each gas outlet pipe and the intersection pipe 50 can form a "T" shape, a "Y" shape, or an "X" shape structure, and the specific shape depends on the layout and space requirements of the gas outlet pipe 40.

[0062] In some embodiments, the junction pipe 50 and the gas outlet pipe interface can be configured as a flange connection, a threaded connection or other sealing connection to ensure that the gas does not leak at the connection.

[0063] In some embodiments, the material of the junction pipe 50 needs to be selected according to the chemical properties and temperature conditions that may be encountered during the gas deposition process to ensure the corrosion resistance and high temperature resistance of the pipe.

[0064] It can be understood that the function of the junction pipe 50 is to guide the gas in each gas outlet pipe 40 to a common exhaust outlet 53 to achieve centralized treatment of the gas. By using the junction pipe 50, the number and complexity of the pipes required can be reduced, and the design and maintenance of the entire exhaust system can be simplified.

[0065] The gas deposition device of some embodiments further comprises an exhaust gas treatment device (not shown in the figure) which communicates with the junction pipe 50 for treating the exhaust gas discharged from each gas outlet pipe 40 through the junction pipe 50.

[0066] Specifically, the exhaust gas treatment device communicates with the exhaust outlet 53 and mainly functions to purify the exhaust gas discharged from the gas deposition device, which may contain harmful chemical substances, unreacted gases or solid particles, etc. These harmful substances are removed from the exhaust gas by physical or chemical methods such as filtration, adsorption, condensation, etc. The exhaust gas treatment device removes or converts harmful substances to prevent them from being directly discharged into the atmosphere and reduce environmental pollution. The exhaust gas may contain flammable, explosive or toxic gases, and the exhaust gas treatment device protects the safety of personnel and equipment through safety measures such as explosion-proof devices. In some specific embodiments, the exhaust gas treatment device is an arsenic trap filter.

[0067] The above is only a specific implementation of the embodiments of the present application, but the protection scope of the embodiments of the present application is not limited thereto, any change or replacement within the technical scope disclosed by the embodiments of the present application should be covered within the protection scope of the embodiments of the present application. Therefore, the protection scope of the embodiments of the present application should be subject to the protection scope of the claims.

Claims

1. A vapor deposition apparatus provided with an exhaust device, characterized by, The reaction chamber and the exhaust pipe arranged at the bottom of the reaction chamber to discharge the tail gas; The inner bottom wall edge of the reaction chamber is provided with a sunken groove body to converge the tail gas, one side wall of the sunken groove body meets the inner side wall of the bottom of the reaction chamber, and the inner side wall of the bottom of the reaction chamber and the bottom wall of the sunken groove body are smoothly connected by an arc chamfer surface; The exhaust pipe is arranged at the bottom of the reaction chamber, one end of the exhaust pipe meets the inner side wall of the bottom of the reaction chamber and the inner surface of the sunken groove body, and the meeting position of the exhaust pipe and the sunken groove body is not higher than the meeting position of the arc chamfer surface and the bottom wall of the sunken groove body.

2. The vapor deposition apparatus according to claim 1, wherein The number of the exhaust pipes is at least two, and each exhaust pipe is arranged around the central axis of the reaction chamber.

3. The vapor deposition apparatus according to claim 1, wherein The exhaust pipe extends away from the central axis of the reaction chamber.

4. The vapor deposition apparatus according to claim 1, wherein The inner diameter of the exhaust pipe increases away from the central axis of the reaction chamber.

5. The vapor deposition apparatus according to claim 1, wherein The collecting device for intercepting at least part of the solid substances in the tail gas is further included, and the other end of the exhaust pipe penetrates the side wall of the collecting device and communicates with the collecting device.

6. A vapour deposition apparatus as claimed in claim 5, wherein, The number of the exhaust pipes is at least two, the number of the collecting devices is at least two and corresponds to each exhaust pipe, and each collecting device is arranged around the central axis of the reaction chamber.

7. The vapor deposition apparatus according to claim 5, wherein The exhaust pipe is further included, one end of the exhaust pipe penetrates the side wall of the collecting device and communicates with the collecting device.

8. A vapour deposition apparatus as claimed in claim 7, wherein, The number of the exhaust pipes is at least two, the number of the exhaust pipes is at least two and corresponds to each collecting device, and each exhaust pipe is inclined to the central axis of the reaction chamber and extends towards the central axis of the reaction chamber.

9. A vapour deposition apparatus as claimed in claim 8, wherein, At least one of the exhaust pipes includes a telescopic pipe structure close to the collecting device, which is used to flexibly adjust the relative position between the exhaust pipe and the corresponding collecting device.

10. The vapor deposition apparatus according to claim 7, wherein The intersection pipe and the tail gas treatment device are further included, each exhaust pipe meets one end of the intersection pipe and communicates with the intersection pipe, and the other end of the intersection pipe communicates with the tail gas treatment device.

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