Heat dissipation device for power semiconductor

Abstract

The utility model relates to a radiating device for a power semiconductor, which comprises a power semiconductor module and a radiator, the power semiconductor module is inserted and mounted on the radiator and radiates heat through the radiator, and a metal substrate is welded at the bottom of the power semiconductor module. The bottom surface of the metal substrate is provided with a plurality of uniformly arranged convex PinFin structures, the working surface of the top of the radiator is provided with hollow grooves in one-to-one correspondence with the PinFin structures, and embedded installation between the power semiconductor module and the radiator is realized by inserting each PinFin structure into the corresponding hollow groove. A certain gap is formed between the installed hollow groove and the PinFin structure, the hollow groove and the PinFin structure are connected and fixed through a connecting piece, a heat dissipation structure is arranged on the radiator, heat dissipation is conducted on the power semiconductor module installed on the radiator through the heat dissipation structure, and it is guaranteed that the product performance of the power semiconductor module is stable. The utility model has the advantages of simple and reasonable structure, practicability, convenience and the like.

Description

TECHNICAL FIELD

[0001] The utility model belongs to power semiconductor heat dissipation technical field relates to the heat dissipation device for power semiconductor. BACKGROUND

[0002] Power semiconductor module is the product that semiconductor chip and electronic components are packaged together, has the characteristics such as simple installation, high reliability. The product will generate power consumption and heat when working, so in the system, power semiconductor module needs to be installed to radiator, provides good heat dissipation path for device, so that the performance of product is better.

[0003] At present, liquid cooling or air cooling scheme is usually used in the design of heat dissipation system. In the indirect air cooling or liquid cooling heat dissipation scheme, heat dissipation material is brushed on the bottom of module and the surface of radiator to improve the heat dissipation capacity. But in some practical applications, because of the temperature and humidity of external environment, impurity pollution and other reasons, heat dissipation material will appear loss, dry and other problems, eventually leading to device damage, efficiency decline.

[0004] Therefore, the heat dissipation device for power semiconductor is designed to overcome the above problems. INVENTION CONTENTS

[0005] The utility model aims at overcoming the insufficient of prior art, and provides a heat dissipation device for power semiconductor, which has simple and reasonable structure, is convenient to use, has good heat dissipation performance, can provide good heat dissipation for power module during work, and better play the performance of product.

[0006] The utility model is realized through the following technical scheme: a heat dissipation device for power semiconductor, including power semiconductor module and radiator, power semiconductor module is inserted and installed on the radiator, and is cooled through the radiator, the bottom of power semiconductor module is welded with metal base plate, a plurality of uniform distribution PinFin structures in convex shape are arranged on the bottom surface of the metal base plate, a plurality of hollow grooves corresponding to PinFin structures are arranged on the working surface of the top of the radiator, the embedded installation between power semiconductor module and radiator is realized by inserting each PinFin structure into the corresponding hollow groove, and a certain gap is arranged between the hollow groove and PinFin structure after installation, power semiconductor module and radiator are connected and fixed through connecting piece, the radiator is provided with heat dissipation structure, and the power semiconductor module installed on the radiator is cooled through the heat dissipation mechanism, so as to ensure the stable product performance of power semiconductor module.

[0007] As preferred: the connecting piece is a module mounting hole arranged at four corners of the metal base plate of the power semiconductor module and penetrating through the metal base plate and a radiator mounting hole arranged on the working surface of the top of the radiator and corresponding to the module mounting hole, threads are arranged in the module mounting hole and the radiator mounting hole, and the Pin Fin structure of the power semiconductor module is inserted into the hollow groove of the radiator, and then the screw is inserted into the module mounting hole and the radiator mounting hole in sequence to realize threaded connection and fixation.

[0008] As preferred: the metal base plate is composed of an upper copper layer, a ceramic layer and a lower copper layer arranged in sequence from top to bottom, and the upper copper layer is welded with a thermistor and a chip on the upper surface through solder respectively, and the bottom surface of the lower copper layer is attached to the metal base plate.

[0009] As preferred: the heat dissipation structure is composed of a heat conductive material and a plurality of uniformly distributed grooves arranged at the bottom of the radiator, the grooves are used for improving the heat dissipation area, and the heat conductive material is filled in the gap between the Pin Fin structure and the hollow groove.

[0010] As preferred: the grooves are in a long strip shape, and each long strip-shaped groove makes the bottom of the radiator form a sparse structure, which is used for cooperating with the air cooling and liquid cooling medium to take away the heat generated in the operation of the power semiconductor module.

[0011] As preferred: the grooves are in a cylindrical structure, which is used for cooperating with the air cooling and liquid cooling medium to take away the heat generated in the operation of the power semiconductor module.

[0012] As preferred: the heat conductive material is heat conductive glue.

[0013] As preferred: the Pin Fin structure in the convex shape is in a cylindrical structure, and the hollow groove is in a cylindrical, elliptical or square structure.

[0014] The beneficial effects of the utility model are as follows:

[0015] The heat dissipation device for the power semiconductor designed in the utility model slows down the loss of the heat dissipation material through a new radiator design structure scheme, prolongs the on-site operation life, improves the heat dissipation efficiency of the power semiconductor module, the heat dissipation structure of the utility model increases the heat dissipation area of the power semiconductor module, and the overall embedded cooperation mode effectively prevents the loss of the heat dissipation material, thereby providing guarantee for long-term reliable operation of the power semiconductor module. DRAWINGS

[0016] Figure 1 It is a structural schematic view (not installed state) of the power semiconductor module and the radiator in the utility model;

[0017] Figure 2 It is a structural schematic view of the power semiconductor module in the utility model.

[0018] Figure 3 It is the sectional view of the power semiconductor module and the radiator after installation in the utility model;

[0019] Figure 4 It is the sectional view of the power semiconductor module and the radiator after installation in the utility model; Figure 3 It is the sectional view of the power semiconductor module and the radiator after installation in the utility model;

[0020] Figure 5 It is the sectional view of the power semiconductor module and the radiator after installation in the utility model. DETAILED DESCRIPTION

[0021] In order to make ordinary skilled in the art more clearly understand the purpose, technical scheme and advantage of the utility model, the following will be further described to the utility model with the drawings and examples.

[0022] In the description of the utility model, it needs to be understood that the orientation or position relation indicated by "up", "down", "left", "right", "inner", "outer", "horizontal", "vertical" and the like is based on the orientation or position relation shown in the drawings, and is only for the convenience of describing the utility model, and is not indicated or implied that the indicated device or element must have a particular orientation, so it cannot be understood as a limitation on the utility model.

[0023] The utility model will be described in detail in combination with the drawings: as Figures 1-2 As shown in a kind of heat dissipation device for power semiconductor, including power semiconductor module 1 and radiator 2, power semiconductor module 1 is inserted and installed on radiator 2, is cooled by radiator 2, the bottom of the power semiconductor module 1 is welded with metal substrate 3, the bottom surface of this metal substrate 3 is provided with multiple PinFin structure 4 evenly arranged in convex shape, hollow groove 6 corresponding to PinFin structure is provided on the working surface 5 of the top of the radiator 2, the embedded installation between power semiconductor module 1 and radiator 2 is realized by each PinFin structure 4 insertion corresponding hollow groove 6, and a certain gap 7 is arranged between hollow groove 6 and PinFin structure 4 after installation, radiator 2 and power semiconductor module 1 are also connected and fixed by connecting piece, the radiator 2 is provided with heat dissipation structure, and the power semiconductor module 1 installed on the radiator 2 is cooled by heat dissipation mechanism, to ensure the product performance stability of power semiconductor module 1.

[0024] Of course, power semiconductor module can also be locked on radiator by welding.

[0025] The metal substrate 3 is composed of upper copper layer 12, ceramic layer 13 and lower copper layer 14 arranged in sequence from top to bottom, and thermistor 15 and chip 16 are welded on the upper surface of the upper copper layer 12 by solder respectively, and the bottom surface of the lower copper layer 14 is attached to the metal substrate 3.

[0026] As Figures 3-5 shown, the connecting piece is provided at four corners of the metal base plate 3 of the power semiconductor module, penetrates the module mounting hole 8 of the metal base plate, and is provided on the working surface 5 of the top of the heat sink 2 corresponding to the module mounting hole 8. Thread is arranged in the module mounting hole 8 and the heat sink mounting hole 9. After the Pin Fin structure 4 of the power semiconductor module 1 is inserted into the hollow groove 6 of the heat sink 2, the screw is inserted into the module mounting hole 8 and the heat sink mounting hole 9 in sequence to realize threaded connection and fixation.

[0027] The heat dissipation structure 2 is composed of a heat-conducting material 11 and a plurality of uniformly distributed grooves 10 provided at the bottom of the heat sink. The grooves 10 are used to increase the heat dissipation area, and the heat-conducting material 11 is filled at the gap 7 between the Pin Fin structure and the hollow groove.

[0028] The grooves 10 can be in a long strip structure. Each long strip-shaped groove 10 forms a sparse structure at the bottom of the heat sink 2, which is used to cooperate with the air cooling and liquid cooling medium to carry away the heat generated by the power semiconductor module during operation. The grooves 10 can also be in a cylindrical structure, which is used to cooperate with the air cooling and liquid cooling medium to carry away the heat generated by the power semiconductor module during operation.

[0029] Of course, the grooves can also be not limited to long strip structure and cylindrical structure, and can meet the actual requirements.

[0030] The heat-conducting material 11 is a substance with heat dissipation performance such as heat-conducting glue. The Pin Fin structure 4 in a convex shape can also be in a cylindrical structure according to actual conditions, and the hollow groove 6 can be in a cylindrical, elliptical or square structure, which is not limited and can meet the actual requirements.

[0031] The heat dissipation device for the power semiconductor designed in the utility model slows down the loss of the heat dissipation material through a new heat sink design structure scheme, prolongs the on-site operation life, and improves the heat dissipation efficiency of the power semiconductor module. The heat dissipation structure of the utility model increases the heat dissipation area of the power semiconductor module, and the overall embedded cooperation mode effectively prevents the loss of the heat dissipation material, thereby providing guarantee for long-term and reliable operation of the power semiconductor module.

[0032] The specific embodiments described in the present application are only illustrative of the principles and effects of the utility model, and are not used to limit the utility model. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the utility model. Therefore, all equivalent modifications or changes completed by those skilled in the art without departing from the spirit and technical thought disclosed by the utility model should be covered by the claims of the utility model.

Claims

1. Heat sink arrangement for a power semiconductor, comprising a power semiconductor module (1) and a heat sink (2), the power semiconductor module (1) being inserted mounted on the heat sink (2) for heat dissipation by the heat sink (2), characterized in that: The bottom of the power semiconductor module (1) is welded with a metal substrate (3), the bottom surface of the metal substrate (3) is provided with a plurality of uniformly arranged PinFin structures (4) in a convex shape, a hollow groove (6) corresponding to the PinFin structure is arranged on the working surface (5) of the top of the heat sink (2), the power semiconductor module (1) and the heat sink (2) are embedded and installed by inserting each PinFin structure (4) into the corresponding hollow groove (6), and a gap (7) is arranged between the installed hollow groove (6) and the PinFin structure (4), the heat sink (2) and the power semiconductor module (1) are further connected and fixed by a connecting piece, the heat sink (2) is provided with a heat dissipation structure, the power semiconductor module (1) installed on the heat sink (2) is cooled by the heat dissipation structure, and the product performance of the power semiconductor module (1) is stable.

2. The heat sink for a power semiconductor according to claim 1, characterized by: The connecting piece is a module mounting hole (8) arranged at four corners of the power semiconductor module metal substrate (3) and penetrating the metal substrate and a heat sink mounting hole (9) arranged on the working surface (5) of the top of the heat sink (2) and corresponding to the module mounting hole (8), threads are arranged in the module mounting hole (8) and the heat sink mounting hole (9), after the PinFin structure (4) of the power semiconductor module (1) is inserted into the hollow groove (6) of the heat sink (2), bolts are inserted into the module mounting hole (8) and the heat sink mounting hole (9) in sequence to realize threaded connection and fixation.

3. The heat sink for a power semiconductor according to claim 1 or 2, characterized in that: The metal substrate (3) is composed of an upper copper layer (12), a ceramic layer (13) and a lower copper layer (14) arranged in sequence from top to bottom, a thermistor (15) and a chip (16) are welded on the upper surface of the upper copper layer (12) by solder respectively, and the bottom surface of the lower copper layer (14) is attached to the metal substrate (3).

4. The heat sink for a power semiconductor according to claim 1 or 2, characterized by: The heat dissipation structure is composed of a heat-conducting material (11) and a plurality of uniformly distributed grooves (10) arranged on the bottom of the heat sink, the grooves (10) are used to increase the heat dissipation area, and the heat-conducting material (11) is filled in the gap (7) between the PinFin structure and the hollow groove.

5. The heat sink for a power semiconductor according to claim 4, characterized by: The grooves (10) are in a long strip shape, and each long strip-shaped groove (10) forms a sparse structure at the bottom of the heat sink (2), which is used to cooperate with air cooling and liquid cooling medium to carry away the heat generated by the power semiconductor module during operation.

6. The heat sink for a power semiconductor according to claim 4, characterized by: The grooves (10) are in a cylindrical structure, which is used to cooperate with air cooling and liquid cooling medium to carry away the heat generated by the power semiconductor module during operation.

7. The heat sink for a power semiconductor according to claim 4, characterized by: The heat-conducting material (11) is heat-conducting glue.

8. The heat sink for a power semiconductor according to claim 1 or 7, characterized by: The PinFin structure (4) in a convex shape is in a cylindrical structure, and the hollow groove (6) is in a cylindrical or elliptical or square structure, which is used to cooperate with the PinFin structure (4) in a cylindrical structure to improve the heat dissipation efficiency.

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