Film forming device and semiconductor processing equipment
By designing the air intake components and stage arrangement in the film deposition device, the problem of difficulty in controlling the reaction uniformity of multiple substrates was solved, and the consistency of the airflow field and the improvement of processing efficiency were achieved.
Patent Information
- Application Number
- CN202423318280.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-31
- Publication Date
- 2025-12-19
- Estimated Expiration
- 2034-12-31
AI Technical Summary
In existing technologies, it is difficult to control the uniformity of the reaction during the growth of multiple substrates, resulting in complex cavity structures and diverse parameters, which is not conducive to control.
Design a film forming device including a processing chamber, a base, an air intake assembly and multiple stages. The air intake direction of the air intake assembly is parallel to the base, and the stages are arranged at intervals along a first direction and intersect with the air intake direction. The airflow environment is controlled by independent air intake zones and rotation direction to ensure the consistency of the airflow field.
It improves the processing efficiency and reaction uniformity of multi-substrate systems, simplifies the cavity structure, and reduces control complexity.
Smart Images
Figure CN223693082U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application belongs to the technical field of semiconductor, and particularly relates to a film forming device and a semiconductor processing equipment. BACKGROUND
[0002] In the field of semiconductor manufacturing, a wafer needs to contact a reaction gas for a growth reaction in a growth process, so that a high-quality film layer is formed on the wafer surface, thereby meeting the requirements of high-performance device manufacturing.
[0003] In the prior art, a plurality of substrates can be arranged in a reaction cavity, and the airflow environment of the plurality of substrates is made relatively consistent through rotation of a susceptor, or the airflow environment of the plurality of substrates is made relatively consistent through a showerhead type vertical gas inlet mode of the susceptor, thereby controlling the reaction uniformity between the plurality of substrates. However, both of the two modes will complicate the structure or components of the cavity, and the growth uniformity between the plurality of substrates involves more parameters, which is not conducive to control. CONTENT OF THE UTILITY MODEL
[0004] The utility model aims at overcoming the technical problem that the growth uniformity of the plurality of substrates is difficult to control, and provides a film forming device and a semiconductor processing equipment.
[0005] TECHNICAL SCHEME The utility model discloses a film forming device, which comprises:
[0006] A processing chamber with a reaction cavity, the processing chamber comprises a top wall, a bottom wall opposite to the top wall and a side wall, and the top wall, the bottom wall and the side wall jointly enclose the reaction cavity;
[0007] A susceptor arranged in the reaction cavity and connected with the bottom wall or the top wall;
[0008] A gas inlet assembly comprising a gas inlet main body, the gas inlet main body is arranged on the side wall and has a gas inlet direction, the gas inlet main body can introduce external gas into the reaction cavity along the gas inlet direction, and the gas inlet direction is parallel to the susceptor;
[0009] A plurality of carriers arranged on the susceptor, the plurality of carriers are arranged at intervals along a first direction, the first direction intersects with the gas inlet direction, and the projection of each carrier on any projection plane with the gas inlet direction as a projection direction does not intersect.
[0010] In some embodiments, the gas inlet assembly comprises a gas inlet channel, and the gas inlet channel is connected between the gas inlet main body and the reaction cavity.
[0011] The gas inlet channel comprises a first sub-zone, a second sub-zone and a third sub-zone arranged along the first direction and independent of each other;
[0012] The first sub-zone is provided in plurality, and the projection of the carrier in the same projection plane covers the projection of the first sub-zone in the gas inlet direction, and the first sub-zone is arranged along the gas inlet direction away from the carrier; the second sub-zone is arranged between adjacent first sub-zones, and the third sub-zone is arranged on the side of the first sub-zone away from the second sub-zone and connected with the side wall of the reaction cavity along the first direction.
[0013] In some embodiments, the gas inlet assembly further comprises a plurality of gas inlet pipelines, each of the first sub-zone, the second sub-zone and the third sub-zone corresponds to at least one gas inlet pipeline, and the gas inlet channel in the first sub-zone, the second sub-zone and the third sub-zone is communicated with the corresponding gas inlet pipeline; the gas inlet pipelines of the first sub-zone, the second sub-zone and the third sub-zone are not communicated with each other;
[0014] The gas flow per unit flow area released by the second sub-zone is greater than the gas flow per unit flow area released by the first sub-zone;
[0015] And / or, the gas flow per unit flow area released by the third sub-zone is greater than the gas flow per unit flow area released by the first sub-zone.
[0016] In some embodiments, the carrier is capable of rotating relative to the base, and in the first direction, the rotation directions of adjacent carriers are opposite.
[0017] In some embodiments, the carrier comprises three or more, the gas inlet pipelines of adjacent two second sub-zones are not communicated, and the gas flow per unit flow area released by adjacent two second sub-zones is different by 3%-15%.
[0018] In some embodiments, the processing chamber has an exhaust channel located on the side of the base away from the gas inlet body;
[0019] The film forming device further comprises a flow guide, which is arranged opposite to the gas inlet body in the gas inlet direction, and has an inner arc surface connected with the inner wall of the exhaust channel, and the flow guide is used for guiding the reaction gas to the exhaust channel.
[0020] In some embodiments, it further comprises an induction coil, which surrounds the processing chamber and is arranged in a row;
[0021] The induction coil has a first coil portion corresponding to the carrier platform in the up-down direction, the single-turn extension direction of the first coil portion is parallel to the first direction, and the multi-turn array direction of the first coil portion is parallel to the air inlet direction.
[0022] In some embodiments, the carrier center of each carrier platform is located on the same line parallel to the first direction.
[0023] In some embodiments, in the air inlet direction, the carrier center of at least one carrier platform is located upstream of the carrier center of another carrier platform; the distance between the carrier centers of any two carrier platforms in the air inlet direction is not higher than the radius of the carrier platform.
[0024] The application also discloses a semiconductor processing device, which comprises a front-end processing module, a load lock module, a transport module, and a film forming device as described in the above embodiments connected in sequence.
[0025] The processing device further comprises a gate valve assembly, which comprises:
[0026] A first gate valve is arranged between the front-end processing module and the load lock module and connected to the front-end processing module and the load lock module, respectively.
[0027] A second gate valve is arranged between the load lock module and the transport module and connected to the load lock module and the transport module, respectively.
[0028] A third gate valve is arranged between the transport module and the film forming device and connected to the transport module and the film forming device, respectively.
[0029] In some embodiments, the processing chamber has an exhaust passage, the air inlet assembly comprises an air inlet passage, and the exhaust passage is located on the side of the susceptor away from the air inlet passage.
[0030] The third gate valve is located on the side of the exhaust passage away from the susceptor.
[0031] In some embodiments, the transport module has a first side away from the load lock module, a second side adjacent to the first side, and a third side adjacent to the first side.
[0032] The film forming device is arranged in multiple groups, and each group of the film forming device is arranged on the first side, the second side, and the third side.
[0033] The gate valve assembly comprises multiple third gate valves, and each group of the film forming device corresponds to at least one third gate valve.
[0034] Beneficial effects: The film forming device of the embodiment of the present application comprises a processing chamber, a susceptor, a gas inlet assembly and a plurality of carriers, wherein the processing chamber has a reaction cavity, the processing chamber comprises a bottom wall and a side wall connected together, and the bottom wall and the side wall jointly form the reaction cavity; the susceptor is arranged in the reaction cavity and connected with the bottom wall; the gas inlet assembly comprises a gas inlet body, the gas inlet body is arranged on the side wall and has a gas inlet direction, the gas inlet body can introduce external gas into the reaction cavity along the gas inlet direction, and the gas inlet direction is parallel to the susceptor; the plurality of carriers are arranged on the susceptor, the plurality of carriers are arranged at intervals along a first direction, the first direction intersects the gas inlet direction, and the bearing center of each carrier is located on the same straight line parallel to the first direction. By arranging the plurality of carriers to intersect the gas inlet direction, the airflow environment of the plurality of substrates in the airflow field in the reaction cavity is made consistent, and the processing efficiency and reaction uniformity of the plurality of substrates are improved.
[0035] The semiconductor processing equipment of the embodiment of the present application comprises a front-end processing module, a load locking module, a transport module and the film forming device as described in the above embodiment connected in sequence. Therefore, all the technical features and technical effects of the film forming device can be achieved, which will not be described here again. BRIEF DESCRIPTION OF DRAWINGS
[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced as follows. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained by those skilled in the art without creative effort.
[0037] Figure 1 It is a schematic diagram of the three-dimensional structure of the film forming device of the embodiment of the present application;
[0038] Figure 2 It is a schematic diagram of the top view structure of the film forming device of the embodiment of the present application, and the induction coil is shown in the diagram;
[0039] Figure 3 It is a sectional view of the film forming device of the embodiment of the present application;
[0040] Figure 4 It is a schematic diagram of the top view structure of the film forming device of the embodiment of the present application, and the gas inlet channel is shown in the diagram;
[0041] Figure 5 It is a schematic diagram of the top view structure of the film forming device of another embodiment of the present application, and three groups of carriers are shown in the diagram;
[0042] Figure 6 It is a schematic diagram of the arrangement structure of the semiconductor processing equipment of the embodiment of the present application;
[0043] Figure 7This is a schematic diagram of the arrangement structure of a semiconductor processing apparatus according to another embodiment of this application, wherein multiple sets of film deposition devices are arranged.
[0044] Reference numerals: 1. Film-forming device; 10. Processing chamber; 100. Reaction chamber; 101. Bottom wall; 102. Top wall; 103. Side wall; 20. Base; 30. Air intake assembly; 300. Air intake body; X. Air intake direction; 40. Platform; Y. First direction; 301. Air intake channel; 3011. First section; 3012. Second section; 3013. Third section; 302. Air intake pipe; 50. Exhaust channel; 60. Guide component; 601. Inner arc surface; 501. Inner wall; 70. Induction coil; 701. First part of coil; Z. Up and down direction; 2. Front-end processing module; 3. Load locking module; 4. Transport module; 5. Valve assembly; 51. First valve; 52. Second valve; 53. Third valve; 41. First side; 42. Second side; 43. Third side. Detailed Implementation
[0045] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.
[0046] In the description of this application, it should be understood that the terms "upper," "lower," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or component referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application. In the description of this application, "multiple" means two or more, and "at least one" can refer to one, two, or more, unless otherwise explicitly specified. The terms "first," "second," and "third," etc., are only for the convenience of description and are used to name parts or embodiments by number, and do not imply any order of importance between the parts or embodiments.
[0047] It should be noted that in the drawings of the present application, arrows marked X indicate the direction of incoming gas, arrows marked Y indicate the first direction, and arrows marked Z indicate the up-down direction. In the present application, the directions of incoming gas, the first direction, and the up-down direction are introduced to more clearly define the structure and relative position of each component in a film forming device and a semiconductor processing apparatus. Alternatively, the directions of incoming gas, the first direction, and the up-down direction are perpendicular to each other to optimize the layout of a film forming device and a semiconductor processing apparatus. In the present application, "perpendicular" means completely perpendicular at 90° or almost completely perpendicular, for example, within a range of 80°-100°, it is considered as perpendicular. Similarly, "parallel" means completely parallel or almost completely parallel, for example, within a range of 10°, it is considered as parallel.
[0048] As a preliminary part of the embodiments of the present application, the susceptor in the reaction cavity can be generally arranged with multiple substrates, and the flow environment of the multiple substrates is made relatively uniform by rotating the susceptor, or the flow environment of the multiple substrates is made relatively uniform by using a showerhead type vertical gas inlet mode to the loading surface of the susceptor, thereby controlling the reaction uniformity between the multiple substrates. However, both of the above-mentioned modes will make the structure or components of the cavity complex, and the growth uniformity between the multiple substrates involves more parameters, which is not conducive to control.
[0049] Therefore, the embodiments of the present application provide a film forming device, which aims to solve at least one of the above-mentioned technical problems.
[0050] Please refer to Figure 1As shown, a film forming device 1 of an embodiment of the present application includes a processing chamber 10, a susceptor 20, a gas inlet assembly 30, and a plurality of carriers 40. The processing chamber 10 has a reaction cavity 100. The processing chamber 10 includes a top wall 102, a bottom wall 101 opposite to the top wall 102, and a sidewall 103. The top wall 102, the bottom wall 101, and the sidewall 103 jointly define the reaction cavity 100. The susceptor 20 is disposed in the reaction cavity 100 and connected to the bottom wall 101. In other embodiments, the susceptor 20 can be connected to the top wall 102 (not shown). The gas inlet assembly 30 includes a gas inlet body 300 disposed on the sidewall 103 and having a gas inlet direction X. The gas inlet body 300 can introduce external gas into the reaction cavity 100 along the gas inlet direction X, and the gas inlet direction X is parallel to the susceptor 20. The plurality of carriers 40 are disposed on the susceptor 20 and spaced apart along a first direction Y. The first direction Y intersects the gas inlet direction X. In any projection plane with the gas inlet direction X as the projection direction, the projection of each carrier 40 does not intersect. Further, the load center of each carrier 40 is located on the same line parallel to the first direction Y. It should be understood that the gas inlet body 300 is a gas inlet nozzle. The gas inlet face of the gas inlet nozzle is longitudinally and extendedly disposed and adapted to the gas inlet cross section of the reaction cavity 100. The plurality of carriers 40 are spaced apart along the first direction Y on the susceptor 20. In the up-down direction Z, the gas inlet body 300 is not lower than the carriers 40. In this embodiment, the plurality of carriers 40 are kept in a single row and the arrangement direction (the first direction Y) intersects the gas inlet direction X. In particular, the arrangement direction (the first direction Y) of the plurality of carriers 40 is kept perpendicular to the gas inlet direction X. This can make the gas flow environment of the plurality of substrates in the reaction cavity 100 consistent, and improve the processing efficiency and reaction uniformity of the plurality of substrates.
[0051] See Figure 4 and Figure 5As shown, in some embodiments, the gas inlet assembly 30 comprises a gas inlet passage 301 which is in communication with the reaction cavity 100 and the gas inlet body 300; the gas inlet passage 301 comprises a first sub-zone 3011, a second sub-zone 3012 and a third sub-zone 3013 which are arranged along the first direction Y and are independent of each other; the first sub-zone 3011 is provided in plurality, and in the first direction Y, the position of the first sub-zone 3011 corresponds to the stage 40, taking the gas inlet direction as the projection direction, in the same projection plane, the projection of the stage 40 covers the projection of the first sub-zone 3011, and the first sub-zone 3011 and the stage 40 are arranged in interval along the gas inlet direction X; the second sub-zone 3012 is arranged between adjacent first sub-zones 3011, and in the first direction Y, the position of the second sub-zone 3012 corresponds to the edge-to-edge transition region of adjacent stages 40. The third sub-zone 3013 is arranged on the side of the first sub-zone 3011 away from the second sub-zone 3012, and is connected with the side wall 103 of the reaction cavity 100 along the first direction Y. It should be understood that by arranging the gas inlet passage 301 between the gas inlet body 300 and the stage 40, and dividing the gas inlet passage 301 into the first sub-zone 3011, the second sub-zone 3012 and the third sub-zone 3013 which are independent of each other, wherein the first sub-zone 3011 is used for directional conveying of external gas to flow above the stage 40, and the second sub-zone 3012 and the third sub-zone 3013 are respectively used for compensating or adjusting the gas flow environment on both sides of the stage 40 along the first direction Y, so as to reduce the interference on the gas flow environment in the reaction cavity 100 caused by the rotation of the stage 40, so that the gas flow environment of the plurality of substrates in the gas flow field in the reaction cavity 100 tends to be consistent, and the uniformity and processing efficiency of the reaction of the substrates on the stage 40 are improved.
[0052] Please continue to refer to Figure 4 and Figure 5In some embodiments, the gas inlet assembly 30 further comprises a plurality of gas inlet pipes 302, each of the first sub-zone 3011, the second sub-zone 3012 and the third sub-zone 3013 corresponds to at least one gas inlet pipe 302, and the gas inlet passages 301 in the first sub-zone 3011, the second sub-zone 3012 and the third sub-zone 3013 are in communication with the corresponding gas inlet pipe 302; the gas inlet pipes 302 of the first sub-zone 3011, the second sub-zone 3012 and the third sub-zone 3013 are not in communication with each other; the gas flow per unit flow area released by the second sub-zone 3012 is greater than the gas flow per unit flow area released by the first sub-zone 3011; and / or, the gas flow per unit flow area released by the third sub-zone 3013 is greater than the gas flow per unit flow area released by the first sub-zone 3011. By independently controlling the gas flow per unit flow area released by the first sub-zone 3011, the second sub-zone 3012 and the third sub-zone 3013, the gas flow environment around each susceptor 40 can be accurately controlled to ensure the uniformity of the substrate reaction on each susceptor 40. It should be understood that when the external gas flows through the susceptor 40 via the first sub-zone 3011, the susceptor 40 has a rotating motion, the gas flow direction is easily disturbed, and part of the gas will flow towards the rotating direction of the susceptor 40, causing differences in the gas flow environment in the gas flow field around the susceptor 40, affecting the uniformity of the substrate reaction on the susceptor 40, and affecting the quality of the generated substrate. By adjusting the size difference of the gas flow per unit flow area released by the second sub-zone 3012 and / or the third sub-zone 3013 and the first sub-zone 3011, the low-pressure area of the gas flow environment in the gas flow field is compensated to ensure that the gas flow environment around the substrate on the susceptor 40 in the reaction chamber 100 is consistent, and the processing effect of multiple substrates in the same reaction chamber 100 is consistent.
[0053] In some embodiments, in the gas inlet direction X, the center of the load of at least one susceptor 40 is located upstream of the center of the load of another susceptor 40. Further, the distance between the centers of the loads of any two susceptor 40 in the gas inlet direction X is not higher than the radius of the susceptor 40. For example, the susceptor 40 located at the two ends of the first direction Y can be slightly closer to the gas inlet assembly than the susceptor 40 located at the middle position, because the relative flow rate at the middle position will be higher than that at the two sides. By arranging the susceptor 40 in this way, the gas inlet assembly 30 does not need to be controlled by sub-zones to ensure that the gas flow environment around the substrate on the susceptor 40 in the reaction chamber 100 is consistent, and the processing effect of multiple substrates in the same reaction chamber 100 is consistent. Or for example, when the adjacent two susceptor 40 rotates, the interference between the adjacent susceptor can be reduced by maintaining such staggered arrangement to ensure that the gas flow environment around the substrate on the susceptor 40 in the reaction chamber 100 is consistent.
[0054] In some embodiments, the carrier 40 is capable of rotating relative to the base 20 in the first direction Y, and the rotation direction of adjacent carriers 40 is opposite. It should be understood that by setting the rotation direction of adjacent carriers 40 to be opposite, the airflow field airflow environment between adjacent carriers 40 is reduced to interact with each other, avoiding the flow of pollution particles generated after the external gas reacts with the substrate on one of the carriers 40 to the adjacent carrier 40, thereby improving the reaction quality of the substrate on the carrier 40.
[0055] Referring to Figure 5 In some embodiments, as shown in the figure, the carrier 40 includes three or more, the gas inlet pipeline 302 of adjacent two second sub-regions 3012 is not connected, and the gas flow of the unit flow cross section released by the adjacent two second sub-regions 3012 is different by 3%-15%. It should be understood that when the number of carriers 40 is three or more, in every adjacent three carriers 40, the rotation direction of the two carriers 40 located on the outside along the first direction Y is the same, and the rotation direction of the carrier 40 located in the middle is opposite to that of the carriers 40 on the outside. At this time, the rotation direction of the adjacent edge of the carrier 40 located in the middle and one of the carriers 40 is opposite to the inlet direction X, and the rotation direction of the adjacent edge of the carrier 40 located in the middle and the other carrier 40 is opposite to the inlet direction X. The pressure of the airflow environment in the airflow field between the two carriers 40 facing each other is slightly greater than that between the two carriers 40 facing away from each other. By controlling the gas flow of the unit flow cross section released by the adjacent two second sub-regions 3012 to be different, the airflow environment in the gas flow field in the reaction chamber 100 tends to be consistent, thereby improving the uniformity and processing efficiency of the reaction of the substrate on the carrier 40.
[0056] Referring to Figure 2 With Figure 3 In some embodiments, as shown in the figure, the processing chamber 10 has an exhaust passage 50 located on the side of the base 20 away from the gas inlet body 300; the film forming device 1 further includes a flow guide member 60, which is arranged opposite to the gas inlet body 300 in the inlet direction X, and has an inner arc surface 601 connected with the inner wall 501 of the exhaust passage 50, and is used for guiding the reaction gas to the exhaust passage 50. It should be understood that by arranging the exhaust passage 50 in the inlet direction X of the gas inlet body 300, the particles generated after the gas reacts with the substrate on the carrier 40 are directly discharged through the exhaust passage 50, thereby avoiding the accumulation of particles on the carrier 40 and improving the reaction quality of the substrate on the carrier 40. By arranging the flow guide member 60 to guide the reaction gas into the exhaust passage 50, it should be noted that the exhaust passage 50 in the present embodiment penetrates in the up-down direction Z, and the flow guide member 60 is used to guide the reaction gas in the reaction chamber 100 to be discharged to the exhaust passage 50, thereby reducing the possibility of reverse flow of the reaction gas and ensuring the cleanliness of the gas field around the carrier 40.
[0057] As shown in Figure 2 with Figure 3 As shown in some embodiments, the inductive coil 70 is arranged around the processing chamber 10 and extends in a row. The inductive coil 70 has a first portion coil 701 corresponding to the carrier 40 in the up-down direction Z. The single-turn extension direction of the first portion coil 701 is parallel to the first direction Y, and the row direction of the multi-turn of the first portion coil 701 is parallel to the gas inlet direction X. It should be understood that by arranging the inductive coil 70 around the outer periphery of the processing chamber 10, and arranging the single-turn extension direction of the first portion coil 701 in the inductive coil 70 to be parallel to the first direction Y, and arranging the row direction of the multi-turn of the first portion coil 701 to be parallel to the gas inlet direction X, the uniformity of the induced magnetic field applied to each carrier 40 is ensured, the temperature field of each region in the reaction chamber 100 is more uniform, and the uniformity and processing efficiency of the substrate reaction on the carrier 40 are improved.
[0058] As shown in Figures 6 to 7 The semiconductor processing equipment disclosed in the embodiments of the present application further comprises a front-end processing module 2, a load lock module 3, a transport module 4, and a film forming device 1 as described above. The processing equipment further comprises a gate valve assembly 5, which comprises a first gate valve 51, a second gate valve 52, and a third gate valve 53. The first gate valve 51 is arranged between the front-end processing module 2 and the load lock module 3, and is connected to the front-end processing module 2 and the load lock module 3, respectively. The second gate valve 52 is arranged between the load lock module 3 and the transport module 4, and is connected to the load lock module 3 and the transport module 4, respectively. The third gate valve 53 is arranged between the transport module 4 and the film forming device 1, and is connected to the transport module 4 and the film forming device 1, respectively. It should be understood that the third gate valve 53 is arranged between the transport module 4 and the film forming device 1, which can improve the working efficiency of the transport module 4, and the above layout method has a lower space utilization rate.
[0059] In some embodiments, the processing chamber 10 has an exhaust passage 50, the gas inlet assembly 30 comprises a gas inlet passage 301, and the third gate valve 53 is arranged on the side of the exhaust passage 50 away from the base 20.
[0060] As shown in Figure 7As shown, in some embodiments, the transport module 4 has a first side 41 away from the load lock module 3, a second side 42 adjacent to the first side 41, and a third side; the film forming device 1 is arranged in multiple groups, and each group of the film forming device 1 is arranged on the first side 41, the second side 42, and the third side; the gate valve assembly 5 includes multiple third gate valves 53, and each group of the film forming device 1 corresponds to at least one third gate valve 53. It should be understood that, in the above arrangement, the transport module 4 is configured with multiple film forming devices 1, which improves the processing capacity of the transport module 4, increases the processing scale of the semiconductor processing equipment, and reduces the industrial cost.
[0061] In the above embodiments, the description of each embodiment has its own focus, and the parts not described in detail in a certain embodiment can be referred to the related description of other embodiments.
[0062] The above describes in detail a film forming device and a semiconductor processing equipment provided by the embodiments of the present application, and the principles and implementation manners of the present application are described by using specific examples. The above description of the embodiments is only used to help understand the technical solutions of the present application and the core ideas thereof; those skilled in the art should understand that the technical solutions recorded in the above embodiments can still be modified, or some technical features thereof can be replaced equivalently; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.
Claims
1. A film-forming apparatus, characterized in that, include: The processing chamber (10) has a reaction chamber (100). The processing chamber (10) includes a bottom wall (101), a top wall (102) opposite to the bottom wall (101), and a side wall (103). The top wall (102), the bottom wall (101), and the side wall (103) together form the reaction chamber (100). A base (20) is disposed in the reaction chamber (100) and connected to the bottom wall (101) or the top wall (102); An air intake assembly (30) includes an air intake body (300), which is disposed on the side wall (103) and has an air intake direction (X). The air intake body (300) can introduce external gas into the reaction chamber (100) along the air intake direction (X), which is parallel to the base (20). Multiple platforms (40) are disposed on the base (20). The multiple platforms (40) are arranged at intervals along a first direction (Y). The first direction (Y) intersects with the air intake direction (X). On any projection plane with the air intake direction (X) as the projection direction, the projections of each platform (40) do not intersect.
2. The film-forming apparatus according to claim 1, characterized in that, The air intake assembly (30) includes an air intake channel (301) that connects the air intake body (300) and the reaction chamber (100); The air intake channel (301) includes a first section (3011), a second section (3012), and a third section (3013) arranged along the first direction (Y) and independent of each other; The first partition (3011) is provided in multiple ways. With the air intake direction as the projection direction, the projection of the stage (40) covers the projection of the first partition (3011) in the same projection plane, and the first partition (3011) and the stage (40) are arranged at intervals along the air intake direction (X); the second partition (3012) is provided between adjacent first partitions (3011), and the third partition (3013) is provided on the side of the first partition (3011) away from the second partition (3012), and is connected to the side wall (103) of the reaction chamber (100) along the first direction (Y).
3. The film-forming apparatus according to claim 2, characterized in that, The intake assembly (30) further includes a plurality of intake pipes (302), wherein the first partition (3011), the second partition (3012), and the third partition (3013) each correspond to at least one intake pipe (302), and the intake passages (301) in the first partition (3011), the second partition (3012), and the third partition (3013) are connected to the corresponding intake pipes (302); the intake pipes (302) of the first partition (3011), the second partition (3012), and the third partition (3013) are not connected to each other; The gas flow rate per unit flow area released by the second partition (3012) is greater than the gas flow rate per unit flow area released by the first partition (3011); And / or, the gas flow rate per unit flow area released by the third partition (3013) is greater than the gas flow rate per unit flow area released by the first partition (3011).
4. The film-forming apparatus according to claim 2, characterized in that, The stage (40) is rotatable relative to the base (20), and in the first direction (Y), the rotation directions of adjacent stages (40) are opposite.
5. The film-forming apparatus according to claim 4, characterized in that, The platform (40) includes three or more, the air intake pipes (302) of two adjacent second partitions (3012) are not connected, and the air flow rate per unit flow cross section released by two adjacent second partitions (3012) differs by 3%-15%.
6. The film-forming apparatus according to claim 1, characterized in that, The processing chamber (10) has an exhaust passage (50) located on the side of the base (20) away from the air intake body (300); The film-forming device (1) further includes a guide member (60). In the air intake direction (X), the guide member (60) is disposed opposite to the air intake body (300). The guide member (60) has an inner arc surface (601). The inner arc surface (601) is connected to the inner wall (501) of the exhaust channel (50). The guide member (60) is used to guide the reaction gas to the exhaust channel (50).
7. The film-forming apparatus according to claim 1, characterized in that, It also includes induction coils (70) that surround the processing chamber (10) and extend in a row; The induction coil (70) has a first portion coil (701) arranged in the vertical direction (Z) corresponding to the platform (40). The single-turn extension direction of the first portion coil (701) is parallel to the first direction (Y), and the row direction of the multiple turns of the first portion coil (701) is parallel to the air intake direction (X).
8. The film-forming apparatus according to claim 1, characterized in that, The bearing center of each of the aforementioned platforms (40) is located on the same straight line parallel to the first direction (Y).
9. The film-forming apparatus according to claim 1, characterized in that, In the air intake direction (X), the bearing center of at least one of the platforms (40) is located upstream of the bearing center of another platform (40); the distance between the bearing centers of any two platforms (40) in the air intake direction (X) is not greater than the radius of the platform (40).
10. A semiconductor processing apparatus, characterized in that, It includes a front-end processing module (2), a load locking module (3), a transport module (4) connected in sequence, and a film forming apparatus as described in any one of claims 1 to 9; The processing equipment further includes a valve assembly (5), the valve assembly (5) comprising: A first gate valve (51) is disposed between the front-end processing module (2) and the load locking module (3), and is respectively connected to the front-end processing module (2) and the load locking module (3); The second valve (52) is disposed between the load locking module (3) and the transport module (4), and is connected to the load locking module (3) and the transport module (4) respectively; A third valve (53) is disposed between the transport module (4) and the film forming device (1), and is respectively connected to the transport module (4) and the film forming device (1).
11. The semiconductor processing apparatus according to claim 10, characterized in that, The processing chamber (10) has an exhaust passage (50), and the air intake assembly (30) includes an air intake passage (301). The exhaust passage (50) is located on the side of the base (20) away from the air intake passage (301). The third valve (53) is located on the side of the exhaust passage (50) away from the base (20).
12. The semiconductor processing apparatus according to claim 10, characterized in that, The transport module (4) has a first side (41) away from the load locking module (3), a second side (42) adjacent to the first side (41), and a third side; The film-forming device (1) is arranged in multiple sets, and the multiple sets of film-forming devices (1) are respectively arranged on the first side (41), the second side (42) and the third side; The valve assembly (5) includes a plurality of third valves (53), and each group of film-forming devices (1) corresponds to at least one of the third valves (53).