Sealing structure of vacuum gate valve of semiconductor equipment

Abstract

The utility model discloses a sealing structure for a vacuum gate valve of semiconductor equipment, which is used for a vacuum cavity in a semiconductor ion plating method or a plasma etching process, and comprises a main groove, a second groove, a third groove and a fourth groove, the first sealing ring partially protrudes out of the main groove; the two side grooves are formed in the two sides of the main groove respectively and used for containing a second sealing ring. The second sealing ring partially protrudes out of the side groove; wherein the first sealing ring is a rubber sealing ring, and the second sealing ring is a polytetrafluoroethylene sealing ring. According to the utility model, the structure in the prior art is improved, the first sealing ring in the main groove adopts the rubber sealing ring to play a role in elastic supporting, the sealing performance of the product is ensured, and the second sealing ring in the side groove adopts the PTFE anti-corrosion sealing ring, so that the excellent anti-corrosion performance is provided. And the second sealing ring blocks most of plasma, and the plasma cannot directly bombard the first sealing ring, so that the service life of the product can be greatly prolonged.

Description

Technical Field

[0001] This utility model relates to the semiconductor field, and in particular to a vacuum valve sealing structure for a vacuum chamber used in semiconductor ion plating or plasma etching processes. Background Technology

[0002] In semiconductor manufacturing processes, such as wafer fabrication, workpiece processing, including ion plating and plasma etching, is carried out in a clean and high-vacuum environment. Corrosive and reactive gases are used in these processes. In this environment, the workpiece inlet and outlet require operable valves. Existing valves consist of a fluororubber or perfluoroelastomer sealing ring mounted or bonded to a metal component such as an aluminum or stainless steel plate. During use, the sealing ring comes into contact with the corrosive and reactive gases inside the valve cavity, gradually corroding the ring and causing seal failure.

[0003] In recent years, operating conditions have become increasingly demanding. Therefore, even when using sealing rings made of materials known for their excellent plasma resistance, the service life is still insufficient, and the cost is high. Thus, there is an urgent need for a valve to address these issues. Utility Model Content

[0004] The utility model description section introduces a series of simplified concepts, all of which are simplifications of existing technologies in the field, and will be further explained in detail in the detailed description section. This utility model description section is not intended to limit the key features and essential technical features of the claimed technical solution, nor is it intended to determine the scope of protection of the claimed technical solution.

[0005] The technical problem to be solved by this utility model is to provide a valve sealing structure that has stronger resistance to plasma corrosion and a longer service life compared to the existing technology.

[0006] To solve the above-mentioned technical problems, the present invention provides a semiconductor equipment vacuum valve sealing structure for use in the vacuum chamber of semiconductor ion plating or plasma etching processes, comprising:

[0007] The main groove, formed on the valve base plate, is used to accommodate the first sealing ring;

[0008] The first sealing ring, part of which protrudes from the main groove;

[0009] Two side grooves are arranged on both sides of the main groove, which are used to accommodate the second sealing ring;

[0010] The second sealing ring partially protrudes from the side groove;

[0011] The first sealing ring is a rubber sealing ring, and the second sealing ring is a polytetrafluoroethylene sealing ring.

[0012] Preferably, the sealing structure of the vacuum valve of the semiconductor device is further improved, and the main groove is formed as a rectangular groove, a dovetail groove, or a trapezoidal groove.

[0013] Preferably, the sealing structure of the vacuum valve of the semiconductor device is further improved, wherein the main groove and the side groove have the same shape, and the size of the main groove is larger than that of the side groove.

[0014] Preferably, the sealing structure of the vacuum valve of the semiconductor device is further improved, wherein the first sealing ring and the second sealing ring have the same shape, and the size of the first sealing ring is larger than that of the second sealing ring.

[0015] Preferably, the sealing structure of the vacuum valve of the semiconductor device is further improved, wherein the first sealing ring is integrally molded or bonded and fixed in the main groove.

[0016] Preferably, the sealing structure of the vacuum valve of the semiconductor device is further improved, and the second sealing ring is fixed in the side groove by snap, hook or interference fit.

[0017] Preferably, the sealing structure of the vacuum valve of the semiconductor device is further improved such that the top of the first sealing ring is higher than the top of the second sealing ring;

[0018] During sealing, the top of the first sealing ring is compressed and deformed first, and the top of the second sealing ring is compressed and deformed later.

[0019] The maximum distance of the first sealing ring under compression deformation is greater than or equal to the distance of the second sealing ring under compression deformation.

[0020] This invention improves upon existing technology by designing two side grooves on either side of the existing trench, forming a structure where the main trench is protected by the side grooves. The sealing rings arranged in the main and side grooves are made of different materials. The first sealing ring in the main groove is a rubber sealing ring, providing elastic support and ensuring the product's sealing performance. The second sealing ring in the side groove is a PTFE corrosion-resistant sealing ring, offering superior corrosion resistance. The second sealing ring blocks most of the plasma, preventing it from directly impacting the first sealing ring, thus significantly extending the product's lifespan. Furthermore, once the second sealing ring reaches the end of its lifespan, it can be directly replaced, greatly reducing operating costs. Attached Figure Description

[0021] The accompanying drawings are intended to illustrate the general characteristics of the methods, structures, and / or materials used in specific exemplary embodiments of the present invention, supplementing the description in the specification. However, these drawings are schematic diagrams not drawn to scale and may not accurately reflect the precise structural or performance characteristics of any of the given embodiments. The drawings should not be construed as limiting or restricting the range of numerical values ​​or properties covered by the exemplary embodiments of the present invention. The present invention will now be described in further detail with reference to the accompanying drawings and specific embodiments:

[0022] Figure 1 This is a schematic diagram of the existing plasma gas corrosion principle. The arrows in the diagram indicate the direction of plasma gas contact with the sealing ring.

[0023] Figure 2 This is a schematic diagram of the application of this utility model to a double-sided trench.

[0024] Figure 3 This is a schematic diagram of the application of this utility model to a borderless trench.

[0025] Figure 4 This is a schematic diagram of the application of this utility model to a single-sided trench.

[0026] Explanation of reference numerals in the attached figures:

[0027] Existing technology sealing ring 1;

[0028] Cavity 2;

[0029] Plasma gas 3;

[0030] Valve base plate 4;

[0031] Main trench 5;

[0032] First sealing ring 6;

[0033] Side groove 7;

[0034] Second sealing ring 8. Detailed Implementation

[0035] The following specific embodiments illustrate the implementation of this utility model. Those skilled in the art can fully understand other advantages and technical effects of this utility model from the content disclosed in this specification. This utility model can also be implemented or applied through different specific embodiments, and various details in this specification can also be applied based on different viewpoints, with various modifications or changes made without departing from the overall design concept of the utility model. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. The following exemplary embodiments of this utility model can be implemented in many different forms and should not be construed as limited to the specific embodiments set forth herein. It should be understood that these embodiments are provided to make the disclosure of this utility model thorough and complete, and to fully convey the technical solutions of these exemplary embodiments to those skilled in the art. It should be understood that when an element is referred to as "connected" or "combined" to another element, the element can be directly connected or combined to the other element, or there may be intermediate elements. The difference is that when an element is referred to as "directly connected" or "directly combined" to another element, there are no intermediate elements. Throughout the drawings, the same reference numerals always denote the same elements.

[0036] Example

[0037] This utility model provides a sealing structure for a vacuum gate valve in semiconductor equipment, used in the vacuum chamber of semiconductor ion plating or plasma etching processes, comprising:

[0038] The main groove 5 is formed on the valve base plate 4 and is used to accommodate the first sealing ring (6), which is preferably bonded and fixed in the main groove 5;

[0039] The first sealing ring 6 has a portion that protrudes from the main groove 5; the portion of the first sealing ring 6 that protrudes from the main groove 5 comes into contact with the hand and is subjected to pressure deformation to form a seal.

[0040] Two side grooves 7 are respectively arranged on both sides of the main groove 5, which are used to accommodate the second sealing ring 8;

[0041] The second sealing ring 8 partially protrudes from the side groove 7. The second sealing ring 8 is fixed in the side groove 7 by a snap, hook or interference fit, preferably interference fit.

[0042] The first sealing ring 6 is a rubber sealing ring, and the second sealing ring 8 is a polytetrafluoroethylene sealing ring.

[0043] The first sealing ring 6 in the main groove 5 is a rubber sealing ring that provides elastic support and ensures the sealing performance of the product. The second sealing ring 8 in the side groove 7 is a polytetrafluoroethylene anti-corrosion sealing ring that provides superior anti-corrosion performance.

[0044] Optionally, the main groove 5 can be formed as a rectangular groove, a dovetail groove, or a trapezoidal groove.

[0045] Further improvements to the above embodiments: since the second sealing ring 8 primarily provides corrosion resistance, the second sealing ring 8 does not need to withstand high pressure at all times, and its size does not need to be large when it mainly serves as a corrosion-resistant isolation element.

[0046] The main groove 5 and the side groove 7 have the same shape, but the size of the main groove 5 is larger than that of the side groove 7; the first sealing ring 6 and the second sealing ring 8 have the same shape, but the size of the first sealing ring 6 is larger than that of the second sealing ring 8.

[0047] Since the second sealing ring 8 is the main contact component for plasma gas, it must have corrosion resistance. The first sealing ring 6 is mainly for pressure sealing, so when the second sealing ring 8 blocks the plasma gas, the first sealing ring 6 may not have corrosion resistance and only has a sealing effect.

[0048] In order to provide good sealing performance while having corrosion resistance, the top of the first sealing ring 6 is higher than the top of the second sealing ring 8;

[0049] During sealing, the top of the first sealing ring 6 is compressed and deformed first, and the top of the second sealing ring 8 is compressed and deformed later.

[0050] The maximum distance of the first sealing ring 6 under compression deformation is greater than or equal to the distance of the second sealing ring 8 under compression deformation.

[0051] Based on the principles of the above embodiments, the specific applications of this utility model in double-sided trenches, edgeless trenches, and single-sided trenches will be described respectively, with reference to... Figures 2 to 4 As shown, the double-sided trench and the single-sided trench have a main trench, while the one without a side trench does not have a main trench.

[0052] When this invention is applied to a borderless groove, the position where the first sealing ring is bonded is used as the main groove, and the side grooves are arranged on both sides of the position where the first sealing ring is bonded. For example... Figure 3 As shown, the first sealing ring is bonded at one edge of the valve base plate 4, and a side groove is arranged on the side wall of the valve base plate 4.

[0053] Unless otherwise defined, all terms used herein (including technical and scientific terms) shall have the same meaning as commonly understood by one of ordinary skill in the art to which this invention pertains. It will also be understood that, unless expressly defined herein, terms such as those defined in a general dictionary shall be interpreted as having the meaning consistent with their meaning in the relevant field context, and not as having an idealized or overly formal meaning.

[0054] The present invention has been described in detail above through specific embodiments and examples, but these are not intended to limit the present invention. Many modifications and improvements can be made by those skilled in the art without departing from the principles of the present invention, and these should also be considered within the scope of protection of the present invention.

Claims

1. A sealing structure for a vacuum gate valve in a semiconductor device, used in a vacuum chamber for semiconductor ion plating or plasma etching processes, characterized in that, include: The main groove (5) is formed on the valve base plate (4) and is used to accommodate the first sealing ring (6); The first sealing ring (6) protrudes from the main groove (5); Two side grooves (7) are arranged on both sides of the main groove (5) to accommodate the second sealing ring (8); The second sealing ring (8) protrudes from the side groove (7); Among them, the first sealing ring (6) is a rubber sealing ring, and the second sealing ring (8) is a polytetrafluoroethylene sealing ring.

2. The sealing structure of the semiconductor device vacuum valve as described in claim 1, characterized in that: The main trench (5) is formed as a rectangular trench, a dovetail trench or a trapezoidal trench.

3. The sealing structure of the semiconductor device vacuum valve as described in claim 1, characterized in that: The main groove (5) and the side groove (7) have the same shape, and the main groove (5) is larger than the side groove (7).

4. The sealing structure of the semiconductor device vacuum valve as described in claim 1, characterized in that: The first sealing ring (6) and the second sealing ring (8) have the same shape, and the size of the first sealing ring (6) is larger than that of the second sealing ring (8).

5. The sealing structure of the semiconductor device vacuum valve as described in claim 1, characterized in that: The first sealing ring (6) is integrally molded or bonded to the main groove (5).

6. The sealing structure of the semiconductor device vacuum valve as described in claim 1, characterized in that: The second sealing ring (8) is fixed in the side groove (7) by snap, hook or interference fit.

7. The sealing structure of the semiconductor device vacuum valve as described in claim 1, characterized in that: The top of the first sealing ring (6) is higher than the top of the second sealing ring (8); During sealing, the top of the first sealing ring (6) is compressed and deformed first, and the top of the second sealing ring (8) is compressed and deformed later. The maximum distance of the first sealing ring (6) under compression deformation is greater than or equal to the distance of the second sealing ring (8) under compression deformation.

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