Doping appliance

Abstract

The utility model discloses a doping device, which is used for adding dopant to heavily doped single crystal prepared by a czochralski method, is provided with an accommodating cavity for accommodating the dopant, and is configured to be suitable for being clamped on a seed crystal. According to the doping device disclosed by the utility model, the doping device is configured to be suitable for being clamped on the seed crystal, so that the use of doping tools can be reduced, the doping step can be simplified, the convenience of doping operation can be improved, in addition, the doping agent can be re-fed, the operation difficulty of re-feeding can be reduced, and the safety and the accuracy of re-feeding production can be improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of silicon single crystal preparation, especially to a doping appliance. BACKGROUND

[0002] In the photovoltaic industry, it is necessary to use the Czochralski method to draw P-type or N-type single crystal silicon rods with different resistivities. In order to obtain the target resistivity, different dopants need to be added to the polycrystalline silicon material. In the current single crystal preparation process, solid-phase doping can be used to dope the material. The solid dopant (or doping material containing solid dopant, hereinafter referred to as solid dopant) that has not been gasified is mixed with the silicon material to be added, so that the solid dopant and the silicon material are melted and reacted together to achieve solid-phase doping. However, in actual production, the situation of missing doping or failure to initiate often occurs, at which time re-doping is required. However, the current re-doping tool is relatively complex and inconvenient to operate. SUMMARY

[0003] The utility model aims at at least solving one of the technical problems existing in the prior art. To this end, the utility model provides a doping appliance, which can reduce the use of doping tools, thereby simplifying the doping step, improving the convenience of doping operation, and also achieving re-doping of the dopant, reducing the operation difficulty of re-doping, and improving the safety and accuracy of re-doping production.

[0004] According to the doping appliance of the utility model, the doping appliance is configured to be suitable for being clamped on the seed crystal, which can reduce the use of doping tools, thereby simplifying the doping step, improving the convenience of doping operation, and also achieving re-doping of the dopant, reducing the operation difficulty of re-doping, and improving the safety and accuracy of re-doping production.

[0005] According to the doping appliance of the utility model, the doping appliance is configured to be suitable for being clamped on the seed crystal, which can reduce the use of doping tools, thereby simplifying the doping step, improving the convenience of doping operation, and also achieving re-doping of the dopant, reducing the operation difficulty of re-doping, and improving the safety and accuracy of re-doping production.

[0006] According to some embodiments of the utility model, the doping appliance defines the clamping groove through the doping appliance along the first direction, the opening of the clamping groove is formed on one side of the doping appliance in the second direction, the first direction is along the axial direction of the seed crystal, the second direction is along the radial direction of the seed crystal, and the doping appliance is configured to clamp the seed crystal into the clamping groove from the opening position.

[0007] According to some embodiments of the present application, the seed crystal comprises: a first seed crystal section and a second seed crystal section, the first seed crystal section is arranged on one side of the second seed crystal section in the first direction, the diameter of the first seed crystal section is smaller than the diameter of the second seed crystal section, the opening size of the clamping groove is larger than the diameter size of the first seed crystal section and smaller than the maximum diameter size of the second seed crystal section, and at least part of the doping device is clamped on the second seed crystal section through the clamping groove.

[0008] According to some embodiments of the present application, in the direction of the first seed crystal section towards the second seed crystal section, the cross-sectional area of the clamping groove increases.

[0009] According to some embodiments of the present application, in the direction of the first seed crystal section towards the second seed crystal section, the cross-sectional area of the clamping groove gradually increases.

[0010] According to some embodiments of the present application, the clamping groove comprises a first fitting section and a second fitting section, the first fitting section and the second fitting section are arranged in the first direction, and in the direction of the first seed crystal section towards the second seed crystal section, the cross-sectional size of at least one of the first fitting section and the second fitting section gradually increases.

[0011] According to some embodiments of the present application, the doping device comprises: a main body part, the accommodating cavity is formed in the main body part; a clamping part arranged on one side of the main body part in the radial direction of the seed crystal and connected with the main body part, the clamping part extends along the circumference of the seed crystal and defines the clamping groove.

[0012] According to some embodiments of the present application, the opening of the accommodating cavity faces upwards.

[0013] According to some embodiments of the present application, the doping device is a single crystal silicon material piece.

[0014] According to some embodiments of the present application, the doping device is prepared from a waste crystal bar.

[0015] Additional aspects and advantages of the present application will be given in part in the following description, become apparent from the following description, or be understood by practice of the present application. BRIEF DESCRIPTION OF DRAWINGS

[0016] Figure 1 is a schematic view of a doping device according to embodiments of the present application;

[0017] Figure 2 is a cross-sectional view along the line A-A shown in Figure 1

[0018] Figure 3 ​is a schematic view of another angle of the doping appliance according to an embodiment of the present application;

[0019] Figure 4 is a schematic view of still another angle of the doping appliance according to an embodiment of the present application.

[0020] Reference signs:

[0021] 100, the doping appliance;

[0022] 10, the clamping part; 10a, the clamping groove;

[0023] 20, the main body part; 21, the accommodating cavity. DETAILED DESCRIPTION

[0024] The embodiments of the present application will be described in detail below, examples of which are shown in the drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present application, and cannot be understood as a limitation of the present application.

[0025] Reference will be made to Figures 1-4 The doping appliance 100 according to an embodiment of the present application is described below.

[0026] As Figures 1-4 shown, the doping appliance 100 according to an embodiment of the present application is used for preparing a heavily doped single crystal by a Czochralski method, and the doping appliance 100 is formed with an accommodating cavity 21 for accommodating a dopant, and the doping appliance 100 is configured to be suitable for being clamped on a seed crystal.

[0027] Specifically, the doping appliance 100 is mainly used for putting the dopant into a crucible of a single crystal furnace, and then realizing doping; the accommodating cavity 21 is mainly used for accommodating the dopant, and provides an accommodating space for the dopant.

[0028] Specifically, the Czochralski method is a commonly used method for manufacturing high-purity single crystal silicon, which is to immerse a small piece of seed crystal into molten silicon, and then slowly pull up and rotate, so that the silicon liquid solidifies around the seed crystal to form a single crystal silicon rod. Therefore, in the present embodiment, the doping appliance 100 is configured to be suitable for being clamped on the seed crystal, which can make the dopant follow the seed crystal to be put down at the same time, so that the use of the doping tool can be reduced, and then the doping step can be simplified, and the convenience of the doping operation can be improved; in addition, the clamping structure is simple and convenient to connect, so that the operation step of doping can be further reduced, and the production cost can be reduced.

[0029] In addition, it needs to be explained that the doping device 100 in the embodiment can also be used for re-doping after single crystal pulling failure, so that the operation difficulty of re-doping can be reduced, the safety of re-doping production can be improved, and the risk of doping agent not being doped can be reduced, and the production precision of the crystal bar can be improved.

[0030] According to the doping device 100 in the embodiment of the utility model, the doping device 100 is configured to be clamped on the seed crystal, the use of the doping tool can be reduced, the doping step can be simplified, the convenience of the doping operation can be improved, the re-doping of the doping agent can be realized, the operation difficulty of the re-doping can be reduced, and the safety and accuracy of the re-doping production can be improved.

[0031] According to some embodiments of the utility model, as shown in Figure 1 The doping device 100 defines a clamping groove 10a penetrating through the doping device 100 along a first direction (for example, a downward direction from top to bottom as shown in Figure 1 The opening of the clamping groove 10a is formed on one side of the doping device 100 in a second direction (for example, a right-to-left direction as shown in Figure 1 The first direction is along the axial direction of the seed crystal, and the second direction is along the radial direction of the seed crystal, and the doping device 100 is configured to clamp the seed crystal into the clamping groove 10a from the opening position. That is, the doping device 100 is sleeved on one side of the seed crystal in the radial direction through the clamping groove 10a, so that the installation of the doping device 100 can be facilitated, and the convenience of operation can be improved. At the same time, the structure of the clamping groove 10a is simple and convenient to manufacture, so that the production difficulty of the doping device 100 can be reduced, and the production cost of the doping device 100 can be reduced.

[0032] According to some embodiments of the utility model, as shown in Figure 4 The seed crystal includes a first seed crystal section and a second seed crystal section, the first seed crystal section is arranged on one side of the second seed crystal section in the first direction, the diameter of the first seed crystal section is smaller than the diameter of the second seed crystal section, the opening size h of the clamping groove 10a is greater than the diameter size of the first seed crystal section and smaller than the maximum diameter size of the second seed crystal section, and at least part of the doping device 100 is clamped on the second seed crystal section through the clamping groove 10a.

[0033] Wherein, "the diameter of the first seed crystal section is smaller than the diameter of the second seed crystal section, the opening size of the clamping groove 10a is greater than the diameter size of the first seed crystal section and smaller than the maximum diameter size of the second seed crystal section" is intended to explain that the doping device 100 can be sleeved on the first seed crystal section first, then slide to the second seed crystal section, and form a close clamping with the second seed crystal section. In this way, it can be ensured that the doping device 100 will not easily fall off during the doping process, and at the same time, the installation process of the doping device 100 can be greatly simplified, and the alignment difficulty can be reduced.

[0034] The "at least part of the doping device 100 is clamped on the second seed crystal section through the clamping groove 10a" means that the doping device 100 can be clamped on the second seed crystal section through the clamping groove 10a in part, or can be clamped on the second seed crystal section through the clamping groove 10a in whole.

[0035] According to some embodiments of the present application, the cross-sectional area of the clamping groove 10a gradually increases in the direction of the first seed crystal section towards the second seed crystal section. It can be understood that the cross-section of the clamping groove 10a can gradually increase to form a horn shape, or can be segmented to have different fixed cross-sectional areas at different positions, and the fixed cross-sectional area gradually increases in the direction of the first seed crystal section towards the second seed crystal section. Specifically, at least a part of the clamping groove 10a is clamped with the second seed crystal section, and the size of the second seed crystal section is relatively larger than that of the first seed crystal section. Therefore, in the direction of the first seed crystal section towards the second seed crystal section, the cross-sectional area of the clamping groove 10a increases, which can increase the contact area of the clamping groove 10a with the second seed crystal section, and improve the connection stability of the doping device 100 with the seed crystal.

[0036] According to some embodiments of the present application, the cross-sectional area of the clamping groove 10a gradually increases in the direction of the first seed crystal section towards the second seed crystal section. It can be understood that the cross-section of the clamping groove 10a forms a horn shape, which makes it easier for the seed crystal to be aligned and inserted into the clamping groove 10a. At the same time, as the seed crystal penetrates into the clamping groove 10a, the contact area between the seed crystal and the wall of the clamping groove 10a gradually increases, which can further improve the connection stability of the doping device 100 with the seed crystal.

[0037] According to some embodiments of the present application, the clamping groove 10a comprises a first fitting section and a second fitting section, and the first fitting section and the second fitting section are arranged in a spaced manner along the first direction. In the direction of the first seed crystal section towards the second seed crystal section, the cross-sectional size of at least one of the first fitting section and the second fitting section gradually increases. It can be understood that the cross-sectional size of one of the first fitting section and the second fitting section gradually increases, or the cross-sectional size of both of them gradually increases. In this way, the contact area of the clamping groove 10a with the seed crystal can be at least further ensured, and the installation stability of the doping device 100 can be further ensured.

[0038] According to some embodiments of the present application, as shown in Figure 1 The doping device 100 comprises a main body part 20 and a clamping part 10, and a containing cavity 21 is formed in the main body part 20. The clamping part 10 is arranged on one side of the main body part 20 in the radial direction of the seed crystal and is connected with the main body part 20. The clamping part 10 extends along the circumference of the seed crystal and defines a clamping groove 10a. In this way, the clamping part 10 and the containing cavity 21 do not interfere with each other, which can improve the safety of the dopant placed in the doping device 100 and reduce the risk of side leakage of the dopant before entering the crucible.

[0039] According to some embodiments of the present application, as shown in Figure 1 The opening of the accommodating cavity 21 faces upward. The accommodating cavity 21 is mainly used for accommodating the dopant, so that the opening of the accommodating cavity 21 facing upward can facilitate the storage of the dopant, and can also reduce the risk of side leakage of the dopant before entering the crucible.

[0040] According to some embodiments of the present application, the doping appliance 100 is a single crystal silicon material piece. That is, the doping appliance 100 can be melted in the silicon liquid after entering the crucible, so that when the doping appliance 100 in the present embodiment is used to add the dopant, the doping appliance 100 and the dopant can be directly melted together in the silicon liquid, thereby reducing the risk of the dopant doping only the silicon liquid, so as to improve the efficiency and effect of the dopant doping.

[0041] According to some embodiments of the present application, the doping appliance 100 is prepared from a waste crystal bar. In this way, not only can the waste be reduced, but the production cost can also be reduced.

[0042] Optionally, the dopant can be one or more of magnesium, antimony, gallium, and boron. The elements in the present embodiment are mainly used to change the resistivity of the single crystal silicon, thereby meeting the needs of different products.

[0043] Optionally, the dopant is antimony. Antimony can be used to make special devices and integrated circuits, such as tunnel diodes, semiconductor lasers, and infrared detectors.

[0044] In the description of the present application, it should be understood that the terms "center", "longitudinal", "transverse", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the devices or elements indicated must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.

[0045] In addition, the terms "first" and "second" are only for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise specifically limited.

[0046] In the utility model, unless another definite provision and limitation, the term " install " " link " " connect " " fixed " and so on term should do broad sense understanding, for example, can be fixed connection, also can be detachable connection, or be integrated;Can be mechanical connection, also can be electric connection, also can be communication;Can be direct connection, also can pass through intermediate medium indirectly connect, can be two element internal communication or two element's mutual action relationship. For ordinary skilled person in the art, can understand the concrete meaning of above-mentioned term in the utility model according to specific circumstances.

[0047] In the description of the present specification, the description of the terms "one embodiment", "some embodiments", "example", "specific example" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present utility model. In the present specification, the illustrative description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine the different embodiments or examples described in the present specification and the features of the different embodiments or examples without contradiction.

[0048] Although the embodiments of the present utility model have been shown and described, those skilled in the art can understand that various changes, modifications, replacements and variations can be made to these embodiments without departing from the principles and purposes of the present utility model, and the scope of the present utility model is defined by the claims and their equivalents.

Claims

1. A doping apparatus for the production of heavily doped single crystals by the Czochralski method with the addition of dopant, characterized in that The doping device is configured to be clamped to the seed crystal, and defines a clamping groove penetrating through the doping device along a first direction, an opening of the clamping groove being formed on one side of the doping device in a second direction, the first direction being along an axial direction of the seed crystal, and the second direction being along a radial direction of the seed crystal.

2. The doping apparatus according to claim 1, characterized in that The seed crystal includes a first seed crystal segment and a second seed crystal segment, the first seed crystal segment being arranged on one side of the second seed crystal segment in the first direction, and a diameter of the first seed crystal segment being smaller than a diameter of the second seed crystal segment. An opening size of the clamping groove is greater than a diameter size of the first seed crystal segment and smaller than a maximum diameter size of the second seed crystal segment, and at least a part of the doping device is clamped to the second seed crystal segment through the clamping groove.

3. Doping appliance according to claim 2, characterized in that In a direction in which the first seed crystal segment is towards the second seed crystal segment, a cross-sectional area of the clamping groove increases.

4. A doping apparatus according to claim 3, wherein In a direction in which the first seed crystal segment is towards the second seed crystal segment, a cross-sectional area of the clamping groove gradually increases.

5. The doping apparatus according to claim 3, wherein The clamping groove includes a first fitting segment and a second fitting segment, the first fitting segment and the second fitting segment being arranged at intervals along the first direction, and in a direction in which the first seed crystal segment is towards the second seed crystal segment, a cross-sectional size of at least one of the first fitting segment and the second fitting segment gradually increases.

6. A doping apparatus according to any one of claims 1-5, characterized in that The doping device includes: a main body part, the accommodating cavity being formed in the main body part; a clamping part arranged on one side of the main body part in a radial direction of the seed crystal and connected with the main body part, the clamping part extending along a circumferential direction of the seed crystal and defining the clamping groove.

7. A doping apparatus according to claim 6, wherein An opening of the accommodating cavity faces upwards.

8. The doping apparatus according to claim 1, wherein The doping device is a single crystal silicon material piece.

9. Doping appliance according to claim 8, characterized in that The doping device is prepared from a waste crystal bar. The doping device is prepared from a waste crystal bar.

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