Safety protection type semiconductor light-emitting diode

By employing an aluminum ring and heat sink structure in the LED for heat dissipation design, the problem of shortened lifespan caused by heat accumulation in LEDs is solved, resulting in a longer lifespan and higher stability.

CN223726286UActive Publication Date: 2025-12-26SHENZHEN ESTENDA INTEGRATION CO LTD
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Patent Information

Application Number
CN202520462339.7
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2025-03-16
Publication Date
2025-12-26
Estimated Expiration
2035-03-16

AI Technical Summary

Technical Problem

The heat generated by traditional light-emitting diodes during long-term operation on circuit boards leads to high temperatures at the connection points, shortening their lifespan.

Method used

The heat dissipation design employs an aluminum ring and heat sink structure. A long aluminum ring is inserted into the loading slot on the lower housing, along with a short aluminum ring and a flat aluminum ring, to achieve rapid heat transfer and dissipation and prevent heat accumulation.

Benefits of technology

This effectively extends the lifespan of LEDs, prevents heat from accumulating at circuit board connections for extended periods, and improves the stability and reliability of the equipment.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a safety protection type semiconductor light-emitting diode, which relates to the technical field of light-emitting diodes, and comprises an upper shell, a lower shell is fixedly arranged at the bottom of the upper shell, a loading groove is formed in the lower shell, a long aluminum ring is inserted into the inner side of the loading groove, a short aluminum ring is arranged on the outer side of the lower shell, and the long aluminum ring and the short aluminum ring are arranged in the loading groove. The top of the long aluminum ring and the top of the short aluminum ring are fixedly provided with a planar aluminum ring, the top of the planar aluminum ring is uniformly provided with heat dissipation aluminum sheets, the inner side of the upper shell is fixedly provided with a substrate, the top of the substrate is provided with an N-type semiconductor, and the top of the N-type semiconductor is provided with a P-type semiconductor. The heat dissipation of the device is carried out through the heat dissipation aluminum sheets, so that the service life of the device is prolonged, the heat dissipation aluminum sheets uniformly arranged at the top of the planar aluminum ring are used for dissipating heat generated by the lower shell and the circuit board, and the heat is prevented from being gathered at the joint of the lower shell and the circuit board for a long time.
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Description

TECHNICAL FIELD

[0001] The utility model relates to a light emitting diode technical field especially is a kind of safety protection type semiconductor light emitting diode. BACKGROUND

[0002] As a new product in optoelectronic industry, light emitting diode has the characteristics of small size, long service life, rich color, low energy consumption, and is widely used in display equipment.

[0003] Traditional light emitting diode generates heat when running on circuit board for a long time, especially at the connection between light emitting diode and circuit board, long time high temperature can cause degradation of electrical performance of light emitting diode, shorten its service life. Therefore, we propose a safety protection type semiconductor light emitting diode to solve the above technical problems. UTILITY MODEL CONTENT

[0004] Therefore, the utility model aims at the lack, and its main purpose is to provide a safety protection type semiconductor light emitting diode, which solves the above problems.

[0005] To achieve the above purpose, the utility model adopts the following technical scheme: including upper shell, the bottom of the upper shell is fixedly provided with lower shell, the lower shell is provided with loading groove, the inner side of the loading groove is inserted with long aluminum ring, the outer side of the lower shell is provided with short aluminum ring, the top of the long aluminum ring and the short aluminum ring is fixedly provided with plane aluminum ring, the top of the plane aluminum ring is uniformly provided with heat dissipation aluminum sheet, the inner side of the upper shell is fixedly provided with substrate, the top of the substrate is provided with N type semiconductor, the top of the N type semiconductor is provided with P type semiconductor, the P type semiconductor is provided with reserved slot, the substrate and the N type semiconductor are provided with fixed slot, the inner side of the fixed slot is fixedly provided with insulating sleeve.

[0006] As a preferred scheme, the P type semiconductor is fixedly connected with first lead, the N type semiconductor is fixedly connected with second lead, and the first lead and the second lead respectively penetrate the insulating sleeve.

[0007] As a preferred scheme, the inner side of the upper shell and above the P type semiconductor is fixedly provided with reflecting cover.

[0008] As a preferred scheme, the inner side of the upper shell and above the P type semiconductor is filled with first filling resin.

[0009] As a preferred scheme, the inner side of the upper shell and below the substrate is filled with second filling resin.

[0010] As a preferred solution, the first wire and the second wire both extend to the inside of the second filling resin, a plurality of pins are fixedly arranged on the lower shell, and the plurality of pins extend to the inside of the second filling resin and are connected with the first wire and the second wire respectively.

[0011] The utility model discloses have obvious advantages and beneficial effects compared with prior art, specifically speaking, from the above technical scheme can know, it mainly is:

[0012] The device is loaded with long aluminum rings through the loading groove on the lower shell, and the long aluminum rings inserted into the inside of the loading groove are used for heat dissipation during use of the device, ensuring the service life of the device. The short aluminum rings on the outside of the lower shell are matched with the outside of the lower shell, and the use of the long aluminum rings limits the plane aluminum rings. The plane aluminum rings fixed on the top of the long aluminum rings and the short aluminum rings are used for heat dissipation together with the long aluminum rings and the short aluminum rings. The long aluminum rings and the short aluminum rings have a larger fitting area with the lower shell, which can quickly transfer the heat on the lower shell to the plane aluminum rings through the long aluminum rings and the short aluminum rings, and dissipate the heat through the heat dissipation aluminum sheets, thereby prolonging the service life of the device. The heat dissipation aluminum sheets evenly arranged on the top of the plane aluminum rings are used for dissipating the heat generated on the lower shell and the circuit board, preventing the heat from accumulating at the connection between the lower shell and the circuit board for a long time.

[0013] To make the structure features and functions of the utility model clearer, the utility model will be described in detail below in combination with the drawings and specific examples. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 is a top view structural schematic diagram of the embodiment of the utility model;

[0015] Figure 2 is a bottom view structural schematic diagram of the embodiment of the utility model;

[0016] Figure 3 is an internal structure schematic diagram of the embodiment of the utility model;

[0017] Figure 4 is a P-type semiconductor structure schematic diagram of the embodiment of the utility model;

[0018] Figure 5 is a Figure 4 enlarged structure schematic diagram of A in the embodiment of the utility model;

[0019] Figure 6 is a long aluminum ring structure schematic diagram of the embodiment of the utility model.

[0020] Explanation of reference signs: 1, upper shell; 2, lower shell; 3, loading groove; 4, long aluminum ring; 5, short aluminum ring; 6, flat aluminum ring; 7, heat dissipation aluminum sheet; 8, first filling resin; 9, second filling resin; 10, reflector; 11, substrate; 12, N-type semiconductor; 13, P-type semiconductor; 14, reserved groove; 15, first lead wire; 16, second lead wire; 17, fixing groove; 18, insulating sleeve; 19, pin. DETAILED DESCRIPTION

[0021] In order to make the purpose of the utility model, the technical scheme and the advantage are more clear and obvious, the following combines the drawing and the implementation example, and the utility model is further explained in detail. It should be understood that the specific embodiments described herein are only used to explain the utility model, and are not used to limit the utility model.

[0022] It should be noted that when an element is referred to as being "fixed" to another element, it can be directly on the other element or there can be intervening elements. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements can be present. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only.

[0023] Please refer to Figures 1 to 6 The utility model discloses a safety protection type semiconductor light emitting diode, including upper shell 1, the bottom fixed setting of upper shell 1 has lower shell 2, and the lower shell 2 is set with loading groove 3, and the inner side of loading groove 3 is inserted with long aluminum ring 4, and the outer side of lower shell 2 is provided with short aluminum ring 5, and the top of long aluminum ring 4 and short aluminum ring 5 is fixedly set with flat aluminum ring 6, and the top of flat aluminum ring 6 is evenly provided with heat dissipation aluminum sheet 7, and the inner side of upper shell 1 is fixedly set with substrate 11, and the top of substrate 11 is provided with N-type semiconductor 12, and the top of N-type semiconductor 12 is provided with P-type semiconductor 13, and the reserved groove 14 is set up on P-type semiconductor 13, and the fixing groove 17 is set up on substrate 11 and N-type semiconductor 12 and is penetrated, and the inner side of fixing groove 17 is fixedly set with insulating sleeve 18;

[0024] In the use of the device, the lower shell 2 fixedly provided at the bottom of the upper shell 1 is used for loading the upper shell 1, and the lower shell 2 is attached to the circuit board during use. The circuit board is a mature prior art and is not described in detail herein. The loading slot 3 opened on the lower shell 2 is used for loading the long aluminum ring 4. The long aluminum ring 4 inserted into the inner side of the loading slot 3 is used for heat dissipation of the device during use, ensuring the service life of the device. The short aluminum ring 5 provided on the outer side of the lower shell 2 is attached to the outer side of the lower shell 2, limiting the plane aluminum ring 6 in cooperation with the use of the long aluminum ring 4. The plane aluminum ring 6 fixedly provided at the top of the long aluminum ring 4 and the short aluminum ring 5 is used for heat dissipation of the device together with the long aluminum ring 4 and the short aluminum ring 5. The long aluminum ring 4 and the short aluminum ring 5 have a larger attachment area with the lower shell 2, which can quickly transfer the heat on the lower shell 2 to the plane aluminum ring 6 through the long aluminum ring 4 and the short aluminum ring 5, and dissipate heat through the heat dissipation aluminum sheet 7, thereby prolonging the service life of the device. The heat dissipation aluminum sheet 7 evenly provided at the top of the plane aluminum ring 6 is used to dissipate the heat generated on the lower shell 2 and the circuit board, preventing the heat from accumulating at the connection between the lower shell 2 and the circuit board for a long time. The base plate 11 fixedly provided on the inner side of the upper shell 1 is used for loading the N-type semiconductor 12. The N-type semiconductor 12 provided on the top of the base plate 11 is used for loading the P-type semiconductor 13 on one hand, and as a part of the light source on the other hand. The P-type semiconductor 13 provided on the top of the N-type semiconductor 12 is used for loading the P-type semiconductor 13 when current flows through the N-type semiconductor 12 and the P-type semiconductor 13, thereby realizing light emission. The fixing slot 17 opened through the base plate 11 and the N-type semiconductor 12 is used for loading the insulating sleeve 18. The insulating sleeve 18 fixedly provided on the inner side of the fixing slot 17 is made of insulating material.

[0025] Please refer to Figure 5 The first wire 15 is fixedly connected to the P-type semiconductor 13, and the second wire 16 is fixedly connected to the N-type semiconductor 12. The first wire 15 and the second wire 16 respectively penetrate the insulating sleeve 18.

[0026] In the use of the device, the first wire 15 fixedly connected to the P-type semiconductor 13 is used for current flow on the P-type semiconductor 13, and the second wire 16 fixedly connected to the N-type semiconductor 12 is used for current flow on the N-type semiconductor 12. When current flows between the N-type semiconductor 12 and the P-type semiconductor 13, light emission is realized. The first wire 15 and the second wire 16 respectively penetrate the insulating sleeve 18, which can prevent the first wire 15 and the second wire 16 from being mistakenly touched with the N-type semiconductor 12 and the P-type semiconductor 13.

[0027] Please refer to Figure 3A reflector 10 is fixedly disposed inside the upper housing 1 and above the P-type semiconductor 13;

[0028] When this device is in use, the reflector 10, which is fixedly installed inside the upper housing 1 and above the P-type semiconductor 13, serves as a reflector of light on the P-type semiconductor 13, ensuring the light emission effect on the P-type semiconductor 13.

[0029] Please see Figure 3 The inner side of the upper housing 1 and above the P-type semiconductor 13 is filled with a first filling resin 8;

[0030] When this device is in use, the first filling resin 8, which is filled inside the upper housing 1 and above the P-type semiconductor 13, is used to encapsulate the P-type semiconductor 13 and the upper housing 1 to ensure the stable use of the P-type semiconductor 13.

[0031] Please see Figure 3 The inner side of the upper housing 1 and below the substrate 11 is filled with a second filling resin 9;

[0032] When this device is in use, the second filling resin 9, which is filled inside the upper housing 1 and below the substrate 11, is used to encapsulate the bottom of the substrate 11 and the upper housing 1, thereby sealing the substrate 11 and both sides of the P-type semiconductor 13 to ensure normal light emission.

[0033] Please see Figure 2 and Figure 3 Both the first wire 15 and the second wire 16 extend to the inner side of the second filling resin 9. A plurality of pins 19 are fixedly provided on the lower housing 2. The plurality of pins 19 extend to the inner side of the second filling resin 9 and are respectively connected to the first wire 15 and the second wire 16.

[0034] When this device is in use, the first wire 15 and the second wire 16 both extend to the inside of the second filling resin 9, so that the connection between the first wire 15 and the second wire 16 and the two lower housings 2 is made under sealed and insulated conditions, thereby ensuring the sealed connection between the first wire 15 and the second wire 16 and the two lower housings 2. Multiple pins 19 fixedly provided on the lower housing 2 are used to connect to the first wire 15 and the second wire 16 respectively, and the other end of the pins 19 is connected to the circuit board to realize the power supply function.

[0035] The above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. Any modifications, equivalent substitutions and improvements made within the principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A safety protected semiconductor light emitting diode, characterized in that: The utility model provides a kind of semiconductor laser, including upper shell (1), the bottom of the upper shell (1) is fixedly provided with lower shell (2), the lower shell (2) is opened with loading slot (3), the inner side of the loading slot (3) is inserted with long aluminum ring (4), the outer side of the lower shell (2) is provided with short aluminum ring (5), the top of the long aluminum ring (4) and the short aluminum ring (5) is fixedly provided with plane aluminum ring (6), the top of the plane aluminum ring (6) is uniformly provided with heat dissipation aluminum sheet (7), the inner side of the upper shell (1) is fixedly provided with base plate (11), the top of the base plate (11) is provided with N-type semiconductor (12), the top of the N-type semiconductor (12) is provided with P-type semiconductor (13), the P-type semiconductor (13) is opened with reservation slot (14), the base plate (11) and the N-type semiconductor (12) are opened with fixed slot (17) through, the inner side of the fixed slot (17) is fixedly provided with insulating sleeve (18).

2. A safety protected semiconductor light emitting diode according to claim 1, wherein: The P-type semiconductor (13) is fixedly connected with first wire (15), and the N-type semiconductor (12) is fixedly connected with second wire (16), and the first wire (15) and the second wire (16) respectively penetrate the insulating sleeve (18).

3. The safety protected semiconductor light emitting diode according to claim 1, wherein: The inner side of the upper shell (1) and above the P-type semiconductor (13) are fixedly provided with reflector (10).

4. The safety protected semiconductor light emitting diode according to claim 1, wherein: The inner side of the upper shell (1) and above P-type semiconductor (13) are filled with first filling resin (8).

5. The safety protected semiconductor light emitting diode according to claim 1, wherein: The inner side of the upper shell (1) and below the base plate (11) are filled with second filling resin (9).

6. The safety protected semiconductor light emitting diode according to claim 2, wherein: The first wire (15) and the second wire (16) extend to the inner side of the second filling resin (9), and the lower shell (2) is fixedly provided with a plurality of pins (19), and the plurality of pins (19) extend to the inner side of the second filling resin (9) and are connected with the first wire (15) and the second wire (16) respectively.