Directional sound production screen and display equipment

Abstract

The utility model discloses a directional sounding screen and a display device, the directional sounding screen comprises a vibration layer and a non-vibration layer, the vibration layer comprises a first UTG base material layer, a first conductive layer and a first insulating layer, a plurality of first grooves are formed on the first UTG base material layer, the non-vibration layer comprises a second UTG base material layer, a plurality of microstructures and a second conductive layer, and the second conductive layer is formed on the second UTG base material layer. The microstructure is integrally formed on the second UTG base material layer, the vibration layer is attached to the frame of the non-vibration layer, and the microstructure on the non-vibration layer is correspondingly embedded in the first groove in the vibration layer. According to the utility model, the ultra-thin glass UTG of the vibration layer and the non-vibration layer is respectively processed to form the groove and the microstructure, and the microstructure is embedded into the groove to form a stable structure, so that the processing difficulty is reduced, and the processing precision is easy to control.

Description

TECHNICAL FIELD

[0001] The utility model relates to screen directional sound production technical field, concretely relates to a directional sound production screen and display equipment. BACKGROUND

[0002] The display device is ultrathin, narrow frame, even full screen design, and the space left for the sound production device is smaller and smaller. The traditional sound production device is large in size, and the installation position is limited, so it is difficult to find a suitable position and space in the new generation of display device. Therefore, it is necessary to redesign the sound production device that can adapt to the current demand of display device.

[0003] Some display device manufacturers design a screen to produce sound. The screen sound production technology, as a kind of surface audio technology, provides a new solution for multimedia audio-visual equipment sound. At present, a transparent screen directional loudspeaker combining display device and ultrasonic transducer is being developed.

[0004] The existing transparent screen directional loudspeaker generally includes a vibration layer, a microstructure and a non-vibration layer. The vibration layer and the non-vibration layer are attached to each other, and the microstructure is supported between the vibration layer and the non-vibration layer. At least one electrode layer is provided on the vibration layer and the non-vibration layer to be connected to an external driving circuit. The non-vibration layer and the vibration layer are supplied with voltage signals by the external circuit, and the vibration layer is driven to vibrate up and down to emit ultrasonic signals. The ultrasonic signals are self-demodulated into audible sound through the air.

[0005] When the substrate layer of the vibration layer or the non-vibration layer is a UTG substrate layer, the existing microstructure is formed by directly etching the UTG (ultra-thin flexible glass) substrate layer of the vibration layer or the non-vibration layer. However, since the UTG is relatively thin, the precision of the etched microstructure is difficult to guarantee, and the processing technology is relatively difficult. Therefore, how to guarantee the processing precision of the microstructure while reducing the difficulty of its preparation process is a problem to be solved. UTILITY MODEL CONTENTS

[0006] The utility model aims at providing a directional sound production screen and display equipment.

[0007] To achieve the above-mentioned purpose, on the one hand, the utility model provides a directional sound production screen, which comprises: a vibration layer, the vibration layer comprises a first UTG substrate layer, a first conductive layer and a first insulating layer, a plurality of first grooves recessed away from the non-vibration layer are formed on the surface of the first UTG substrate layer close to the non-vibration layer, the first conductive layer is formed on the surface of the first UTG substrate layer close to the non-vibration layer and covers at least the area on the surface of the first UTG substrate layer except the first grooves, and the first insulating layer is formed on the surface of the first conductive layer close to the non-vibration layer and covers the first conductive layer.

[0008] a non-vibration layer comprising a second UTG substrate layer, a plurality of microstructures integrally formed on a surface of the second UTG substrate layer close to the vibration layer, the microstructures being protruding structures protruding towards the vibration layer and having a height greater than a depth of the first grooves, and a second conductive layer formed on the surface of the second UTG substrate layer close to the vibration layer and covering at least an area on the surface of the second UTG substrate layer other than the microstructures;

[0009] the vibration layer and the non-vibration layer are fitted with each other at a frame, and the microstructures on the non-vibration layer are embedded in the first grooves on the vibration layer, and an air gap required for the vibration layer to vibrate up and down is formed between the vibration layer and the non-vibration layer through the microstructures.

[0010] In a preferred embodiment, the vibration layer further comprises a first edge trace directly formed on at least one edge of the surface of the first conductive layer close to the non-vibration layer, or a second groove is formed on at least one edge of the surface of the first UTG substrate layer close to the non-vibration layer, the second groove is covered with the first conductive layer, and the second groove is filled with metal to form the first edge trace;

[0011] and / or, the non-vibration layer further comprises a second edge trace directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the third groove is covered with the second conductive layer, and the third groove is filled with metal to form the second edge trace;

[0012] or, the non-vibration layer further comprises a second edge trace and an edge insulation layer, the second edge trace is directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the third groove is covered with the second conductive layer, and the third groove is filled with metal to form the second edge trace, and the edge insulation layer is formed on at least one edge of the surface of the second conductive layer close to the vibration layer and covers the second edge trace.

[0013] In a preferred embodiment, when directly formed on the edge of the corresponding conductive layer, the height of the first edge trace and the second edge trace is less than or equal to 5um, and the width is less than 1mm; when filled in the groove, the height of the first edge trace and the second edge trace is greater than the depth of the corresponding groove, and the width of the part protruding from the groove is also greater than the width of the corresponding groove.

[0014] And / or, the height of the first edge trace and the second edge trace is greater than or equal to 5um when filled in the groove, and the width of the first edge trace and the second edge trace above the groove part is less than 1mm.

[0015] In a preferred embodiment, the thickness of the edge insulation layer is less than or equal to 5um, and the width of the edge insulation layer is greater than the width of the second edge trace.

[0016] In a preferred embodiment, the microstructure is further embedded and fixed in the first groove of the vibration layer by viscous glue; and / or, the viscous glue is arranged in the first groove, and / or, the microstructure is embedded in the first groove to be wrapped by the viscous glue before the viscous glue is solidified, and the viscous glue is solidified after the embedding.

[0017] In a preferred embodiment, the vibration layer further comprises a first hardened buffer layer and an optical film layer, the first hardened buffer layer is formed on the upper end face of the first UTG substrate layer away from the non-vibration layer, and the optical film layer is formed on the upper end face of the first hardened buffer layer away from the non-vibration layer.

[0018] And / or, the non-vibration layer further comprises a second hardened buffer layer, the second hardened buffer layer is formed on the lower end face of the second UTG substrate layer away from the vibration layer.

[0019] In a preferred embodiment, the thickness of the first hardened buffer layer is 15um-25um, and / or the thickness of the optical film layer is 1um-5um; and / or, the thickness of the second hardened buffer layer is 2um-4um.

[0020] In a preferred embodiment, the thickness of the first UTG substrate layer is 50um-100um, and / or the depth of the first groove is 20um-70um, the diameter is 20um-100um, and / or the thickness of the first conductive layer is 100nm or less, the square resistance is 70Ω-100Ω, and / or the thickness of the first insulation layer is 6um-15um, and / or the thickness of the second UTG substrate layer is 30um or more, and / or the thickness of the second conductive layer is 100nm or less, the square resistance is 70Ω-100Ω, and / or the height of the air gap is 5um-15um.

[0021] In a preferred embodiment, the height of the microstructure is 30um-100um, the diameter is 100um-200um, and the center distance between adjacent two microstructures is 3mm-3.2mm.

[0022] In another aspect, the utility model provides a kind of display equipment, including above directional sound screen.

[0023] Compared with the prior art, the utility model has the following beneficial effects:

[0024] 1, the utility model discloses a recess and microstructure are formed respectively on the ultrathin glass UTG of vibration layer and non-vibration layer, and the microstructure is embedded into the recess and forms stable structure, which reduces the processing difficulty and realizes the easy control of processing precision, and the precision is controlled between ±1um.

[0025] 2, the utility model discloses that the edge wire is filled into the recess formed on the UTG, compared with the prior art of directly processing on the UTG, the conductivity of the edge wire is improved, and the width of the edge wire is further reduced, the narrow frame of the directional sound screen is realized, and the demand of the market for the narrow frame product is met.

[0026] 3, the utility model discloses that the microstructure and the recess are fixed through viscous colloid, the adhesion stability between the vibration layer and the non-vibration layer is increased, the vibration layer does not separate from the microstructure in the vibration process, the distortion degree can be reduced to below 10%, and the overall reliability of the product is improved.

[0027] 4, the utility model discloses that the microstructure is directly integrated on the UTG, and the filling in the recess matched with the microstructure can eliminate the viscous colloid of the recess shadow, the visibility of the microstructure is increased, the integral effect is formed in the client visual inspection, in addition, the diameter of the microstructure can be increased from the traditional 20um to 100um-200um in the scheme, the structural strength is improved, and the reliability of the product is greatly enhanced. BRIEF DESCRIPTION OF DRAWINGS

[0028] Figure 1 It is the laminated structure schematic view of the directional sound screen (not pasted) of the utility model;

[0029] Figure 2 It is the laminated structure schematic view of the directional sound screen (after pasting) of the utility model;

[0030] Figure 3 It is the structure schematic view that the third recess is formed on the second UTG base material layer of the utility model;

[0031] Figure 4 It is the structure schematic view that the second conductive layer is laid in the third recess of the utility model;

[0032] Figure 5 It is the structure schematic view that the silver paste is filled in the third recess and forms the second edge wire and the covering edge insulating layer of the utility model.

[0033] The reference signs are:

[0034] 1, vibration layer, 11, the first UTG substrate layer, 12, the first conductive layer, 13, the first edge trace, 14, the first insulating layer, 15, the first hardening buffer layer, 16, the optical film layer, 17, the first recess, 18, the second recess, 2, non-vibration layer, 21, the second UTG substrate layer, 22, microstructure, 23, the second conductive layer, 24, the second edge trace, 25, the second hardening buffer layer, 26, the third recess, 27, the edge insulating layer, 3, air gap. DETAILED DESCRIPTION

[0035] The specific embodiments of the present application are described in detail below, but it should be understood that the scope of protection of the present application is not limited by the specific embodiments.

[0036] Unless otherwise explicitly indicated, in the entire specification and claims, the term "comprise" or its variants such as "contain" or "include" and the like will be understood to include the stated element or component, but not exclude the presence of other elements or components.

[0037] Combination Figure 1 And Figure 2 As shown in the figure, the directional sound emitting screen disclosed by the present application specifically comprises a vibration layer 1 and a non-vibration layer 2, the frame of the vibration layer 1 and the non-vibration layer 2 is in close contact, and the air gap 3 required for the vibration layer 1 to vibrate up and down is formed between the vibration layer 1 and the non-vibration layer 2. When working, by applying a voltage signal to the non-vibration layer 2 and the vibration layer 1, the vibration layer 1 is driven to vibrate up and down to emit ultrasonic signals, and the ultrasonic signals are self-demodulated into audible sound through air.

[0038] Among them, the vibration layer 1 specifically comprises a first UTG substrate layer 11, a first conductive layer 12, a first edge trace 13, a first insulating layer 14, a first hardening buffer layer 15 and an optical film layer 16. The first UTG substrate layer 11 is specifically UTG (ultra-thin flexible glass) material, and its thickness can be 50um-100um. Preferably, a plurality of first recesses 17 recessed away from the non-vibration layer 2 are formed on the surface of the first UTG substrate layer 11 close to the non-vibration layer 2 by TGV (glass via hole) process etching, and the first recess 17 is a non-via hole. In practice, the depth of the first recess 17 is preferably 20um-70um, and the diameter is preferably 20um-100um. In addition, in order to prevent light shadow and prevent subsequent first conductive layer 12 preparation from being uneven, after TGV punching, the edge of the first recess 17 is also preferably sharpened.

[0039] The first conductive layer 12 is formed on the end surface of the first UTG substrate layer 11 close to the non-vibration layer 2 and covers at least the area on the surface of the first UTG substrate layer 11 except the first groove 17. In practice, the thickness of the first conductive layer 12 is generally less than 100 nm, and the sheet resistance is 70-100 Ω. In preparation, the first conductive layer 12 can be formed by magnetron sputtering of indium tin oxide (ITO). Since the edges of the first groove 17 are sharpened, the magnetron sputtering of ITO will not form an uneven state.

[0040] The first edge trace 13 is formed on at least one edge of the surface of the first conductive layer 12 close to the non-vibration layer 2. In practice, the first edge trace 13 can be directly formed on the edge of the first conductive layer 12, such as by printing a metal wire or by silver paste printing. In this embodiment, the height of the first edge trace 13 is generally less than or equal to 5 um, such as between 1 um and 5 um. The thicker the thickness, the greater the step difference, and the UTG material is prone to breakage. In order to meet the requirement of narrow frame, the width is generally less than 1 mm.

[0041] Or preferably, the second groove 18 is first formed on at least one edge of the first UTG substrate layer 11 close to the surface of the non-vibration layer 2 by the TGV punching technology, the first conductive layer 12 is covered in the second groove 18, and the first edge wire 13 is formed by filling metal (such as silver paste) in the second groove 18. When filled in the second groove 18, the height of the first edge wire 13 is greater than the depth of the second groove 18, and the width of the part protruding out of the groove is also greater than the width of the corresponding groove. In practice, the height of the first edge wire 13 is greater than or equal to 5um, and the height of the part protruding out of the second groove 18 is less than or equal to 5um and the width is less than 1mm. Compared with the first embodiment, in this embodiment, since the edge wire is filled into the UTG substrate layer, the height of the first edge wire 13 can be greater than or equal to 5um, but generally less than or equal to 30um, and the height of the part protruding out of the groove is less than or equal to 5um and the width is less than 1mm, that is, the total thickness is increased (such as from 5um to 30um) compared with the first embodiment, thereby greatly increasing the conductive area, and further reducing the width while improving the conductive performance of the existing edge wire, realizing an extremely narrow frame of the directional sound emitting screen, thereby meeting the market demand for extremely narrow frame products. In addition, the depth of the second groove 18 is designed according to the formula R=ρL / S, where R represents resistance, ρ represents resistivity, L represents length, and S represents cross-sectional area, that is, the total thickness of the first edge wire 13 is increased by the caulking process, which is equivalent to increasing the cross-sectional area S, such as if S changes from 5um to 30um and other parameters remain unchanged, then the resistance R will become 1 / 6 of the original resistance. In addition, it can be known from the formula that the height of the first edge wire 13 is not limited to greater than or equal to 5um as defined here, but can also be less than 5um, and the height is different according to different filling materials and different lengths and other parameters, and the resistance of the first edge wire 13 is preferably less than 6Ω.

[0042] In addition, since the display screen is generally narrow on three sides and wide on one side, when the first edge wire 13 is formed, the wide side can be directly formed on the first UTG substrate layer 11 by traditional printing or mask sputtering process, and the other three sides are formed by the filling method described above, which is easy to form a narrow frame.

[0043] The first insulating layer 14 is formed on the surface of the first conductive layer 12 close to the non-vibration layer 2 and covers the first conductive layer 12. In practice, the thickness thereof is preferably 6-15 um. In practice, since the first insulating layer 14 is a key functional layer, it has very high requirements on material performance parameters, needs a voltage resistance of more than 40 kv / mm, and has few micro-bubbles and impurities, which can reduce breakdown. At present, it is preferred to be coated, exposed, developed, or printed, and then vacuum dried and degassed by VCD, and then solidified to form. In addition, since the first insulating layer 14 is a key material and plays a dielectric role in the parallel-plate capacitor, the dielectric material is prone to have a polarization phenomenon in an electric field, and the polarization can weaken the electric field, so that the vibration layer amplitude is weakened and the product sound pressure is reduced. In addition, since the product as a whole works under high voltage, such as a direct current bias voltage of 300-400 V and an alternating voltage of 150-250 V, the material also needs to be resistant to high voltage, and the dielectric strength needs to be higher than 40 KV / mm. In an embodiment, the material is selected to have a Tg (temperature resistance) higher than 200°, a relatively symmetrical molecular chain, and a low-impurity material, which can ensure that the product does not have a sound polarization under a 300 V direct current bias voltage + 200 V alternating voltage. The high-Tg material has a relatively stable molecular chain and high structural strength, and is not prone to deflection, thereby causing polarization. In another embodiment, the material has a bulk resistance and a surface resistance of 10 to the power of 9 to 11, and the thickness is preferably 8-12 um, which can resist the product from having a sound polarization under a 300 V direct current bias voltage + 200 V alternating voltage, while maintaining a sound pressure of more than 70 db at 1 kHz.

[0044] The first hardening buffer layer 15 is formed on the upper end surface of the first UTG substrate layer 11 away from the non-vibration layer 2. In practice, the thickness thereof is generally set to 15-25 um. Preferably, the first hardening buffer layer 15 of the utility model and the first UTG substrate layer 11 are free of optical adhesive, and the first hardening buffer layer 15 of the utility model is a layer of material and is integrally formed. After solidification, the surface layer of the first hardening buffer layer 15 has a hardening property, and the surface hardness can reach at least 750g 2H and at most 750g 7H. In other alternative embodiments, the first hardening buffer layer 15 can also use a traditional OCA sheet to adhere a TPU (thermoplastic polyurethane rubber) or PET (polyethylene terephthalate) or CPI (transparent polyimide film) material with a hardening layer Hardcoating. In addition, in order to reduce the stress unevenness of the magnetron sputtering ITO, it is preferred to first perform magnetron sputtering and annealing of ITO, and then perform the first hardening buffer layer 15.

[0045] The optical film layer 16 is formed on the upper end surface of the first hardening buffer layer 15 away from the non-vibration layer 2. In practice, the optical film layer 16 is specifically an anti-glare (AG) / anti-reflection (AR) / anti-fingerprint (AF) layer, and its thickness is related to the process, such as being set to 1-5 um, generally about 1 um. According to customer needs, if there is a folding requirement, the lower the thickness of the optical film layer 16, the better the folding performance.

[0046] The non-vibration layer 2 specifically includes a second UTG substrate layer 21, a plurality of microstructures 22, a second conductive layer 23, a second edge trace 24, and a second hardening buffer layer 25. In practice, the second UTG substrate layer 21 is also made of UTG material, and its thickness is generally 30 um or more, which is the same as the first UTG substrate layer 11. Preferably, the surface of the second UTG substrate layer 21 close to the vibration layer 1 is etched by the TGV (glass through hole) process to form a groove (the groove is a non-through hole groove) except the microstructure 22 area, and the part outside the groove forms a plurality of microstructures 22, that is, the microstructures 22 are integrally formed on the second UTG substrate layer 21 by the TGV process. That is, the microstructures 22 are also made of super-thin flexible glass material, and their refractive index is consistent with the refractive index of the UTG substrate layer of the vibration layer 1 and the non-vibration layer 2, which will form an integrated effect from the client's perspective. Due to the increased overall visibility of the microstructures 22, the diameter of the microstructures 22 can be increased from the traditional 20 um to 100-200 um, the structural strength is improved, the structural support surface pressure is reduced, and the reliability is greatly enhanced. In practice, the height of the microstructure 22 is 30-100 um, the diameter is 100-200 um, and the center distance between adjacent two microstructures 22 is 3-3.2 mm.

[0047] In addition, as shown in Figures 3-5 To fill the second edge trace 24, at least one edge of the surface of the second UTG substrate layer 21 close to the vibration layer 1 is also etched to form a third groove 26 by the TGV process. Similarly, it is preferred to perform edge sharpening treatment on the third groove 26 to prevent the appearance of right-angle corners causing light and shadow to be visually visible.

[0048] The second conductive layer 23 is formed on the end surface of the second UTG substrate layer 21 close to the vibration layer 1 and covers at least the area on the surface of the second UTG substrate layer 21 except the microstructure 22. In the implementation, the thickness of the second conductive layer 23 is generally also 100 nm or less, and the sheet resistance is 70 Ω to 100 Ω, which is the same as the first conductive layer 12. In the preparation, the second conductive layer 23 can also be formed by magnetron sputtering process to deposit indium tin oxide ITO. In addition, in order to prevent ITO from being magnetron sputtered on the top and side of the microstructure 22, when magnetron sputtering is needed, MARSK is performed, and local ITO magnetron sputtering is performed. Since the third groove 26 is subjected to sharp etching treatment or micro-edges treatment, ITO is continuous inside and outside the third groove 26, which can fully guarantee that the second edge wire 24 is maximally overlapped with ITO, thereby reducing the overall load resistance of the device, reducing the load power of the device, and maximizing the efficiency.

[0049] The second edge wire 24 is formed on at least one edge of the surface of the second conductive layer 23 close to the vibration layer 1, which corresponds to the first edge wire 13. In the implementation, the second edge wire 24 can be directly formed on the edge of the second conductive layer 23. Alternatively, preferably, the third groove 26 covered with the second conductive layer 23 is filled with metal (such as silver paste) to form the second edge wire 24. The structure and processing technology of the second edge wire 24 can refer to the description of the first edge wire 13, which will not be described here.

[0050] In addition, preferably, the second conductive layer 23 close to at least one edge of the surface of the vibration layer 1 is also provided with an edge insulating layer 27 covering the second edge wire 24. In the implementation, the thickness of the edge insulating layer 27 is less than or equal to 5 um, and the width is slightly larger than the width of the second edge wire 24, so as to completely cover the second edge wire 24. Of course, the second edge wire 24 can also be provided with an edge insulating layer 27, or the second conductive layer 23 can also be covered with an insulating layer (not shown in the figure), which is the same as the vibration layer 1. The present application does not limit this, as long as the conductive layer of the vibration layer 1 and the conductive layer of the non-vibration layer 2 can be reliably insulated and separated.

[0051] The second hardening buffer layer 25 is formed on the lower end surface of the second UTG substrate layer 21 away from the vibration layer 1, which mainly plays a protection role. In the implementation, the thickness of the second hardening buffer layer 25 is generally set to 2 um to 4 um. The structure and processing technology of the second hardening buffer layer 25 can refer to the description of the first hardening buffer layer 15, which will not be described here.

[0052] The frame of the non-vibration layer 2 is attached to the vibration layer 1, and the microstructure 22 on the non-vibration layer 2 is embedded in the groove on the vibration layer 1, that is, the microstructure 22 on the non-vibration layer 2 is nested with the first groove 17 on the vibration layer 1, the microstructure 22 is partially nested in the first groove 17, and a stable structure is formed, so that the vibration layer 1 does not deviate from the microstructure 22 during vibration, and the distortion can be reduced to below 10%, and the stability is good. In addition, since the height of the microstructure 22 is greater than the depth of the first groove 17, the air gap 3 required for the vibration of the vibration layer 1 can be formed between the vibration layer 1 and the non-vibration layer 2 through the microstructure 22, and the height of the air gap 3 is the difference between the height of the microstructure 22 and the depth of the first groove 17 and the thickness of the second conductive layer 23. In addition, more preferably, the microstructure 22 is further embedded and fixed in the first groove 17 of the vibration layer 1 through the viscous colloid, and the nesting stability of the microstructure 22 and the first groove 17 is further increased. In the implementation, before the first groove 17 of the vibration layer 1 is nested with the microstructure 22 of the non-vibration layer 2, a certain height of viscous colloid with viscosity and not completely solidified is screen printed in the first groove 17 through vacuum screen printing, and after the first groove 17 of the vibration layer 1 is nested with the microstructure 22, the viscous colloid is photocured, so that the microstructure 22 is firmly nested in the first groove 17 of the vibration layer 1. The microstructure 22 is wrapped by the viscous colloid, which is in a ring wall type, and compared with the traditional bonding method: the 3D printing bonding layer is printed on the top of the microstructure 22, the bonding area is small, and the bonding area of the ring wall type viscous colloid here is large, so that the overall reliability of the product can be improved.

[0053] In a specific embodiment, the thickness of the first UTG substrate layer 11 of the vibration layer 1 is 50, the depth of the first groove 17 is 20um, the thickness of the first insulating layer 14 is 10um, the thickness of the first hardening buffer layer 15 is 25um, the thickness of the optical film layer 16 is 1um, the thickness of the second UTG substrate layer 21 is 30um, the height of the microstructure 22 is 39um, the thickness of the first conductive layer 12 and the second conductive layer 23 is 50nm-70nm, the square resistance is 70Ω-100Ω, the center distance between two adjacent microstructures 22 is 3mm-3.2mm, and the thickness of the second hardening buffer layer 25 is 4um. Under the action of a 300V direct current bias voltage and a 200V alternating voltage, the 1kHz sound pressure can reach 72db-75db, and the product area is 12-16 inches.

[0054] The utility model discloses still disclose a kind of display equipment (not shown in figure), including above-mentioned directional sound emitting screen, directional sound emitting screen can be combined with display screen, realize screen directional sound emission, when being combined, it can be directly pasted on the display surface of display screen, it can also be integrated into display screen, the utility model does not limit this.

[0055] The utility model discloses the advantages lie in, 1, the utility model discloses a recess and microstructure are formed to the ultrathin glass UTG of vibration layer and non -vibration layer respectively, and the microstructure is embedded to form stable structure in the recess, has reduced its processing difficulty and has realized its processing precision easy control, and easy control precision is between ±1um. 2, the utility model discloses the edge wire optimization filling is formed in the recess on UTG, compared with the existing direct processing on UTG, can further reduce its width while improving the existing edge wire conductivity, realizes the extremely narrow frame of directional sound screen, thereby satisfies the demand of extremely narrow frame product to market. 3, the utility model discloses the microstructure and recess between through viscous colloid fixed, increase the adhesion stability between vibration layer and non -vibration layer, so that vibration layer in the vibration process, will not separate microstructure, distortion degree can reduce to below 10%, thereby improve the overall reliability of product. 4, the utility model discloses the microstructure is directly integrated into the UTG, and the recess filled in cooperation with the microstructure can eliminate the viscous colloid of recess light shadow, so that the visibility of microstructure whole increases, realizes from the client visual inspection, will form the integration effect, in addition, since the diameter of microstructure in the scheme can increase from the traditional 20um to 100um ~ 200um, the structural strength is promoted, so that the reliability of product greatly enhances.

[0056] The foregoing description of the specific exemplary embodiments of the present application is intended for the purpose of illustration and example. These descriptions are not intended to limit the application to the precise form disclosed, and obviously many modifications and variations are possible in light of the above teachings. The exemplary embodiments were chosen and described in order to explain the principles of the application and its practical application and to allow others skilled in the art to understand the application for various exemplary embodiments with various modifications as are suited to the particular use contemplated. It is intended that the scope of the application be defined by the claims and their equivalents.

Claims

1. A directional sound emitting screen, characterized in that, The vibration layer comprises a first UTG substrate layer, a first conductive layer and a first insulating layer, the first UTG substrate layer is formed with a plurality of first grooves recessed away from the non-vibration layer on the surface close to the non-vibration layer, the first conductive layer is formed on the surface of the first UTG substrate layer close to the non-vibration layer and covers at least the area on the surface of the first UTG substrate layer other than the first grooves, and the first insulating layer is formed on the surface of the first conductive layer close to the non-vibration layer and covers the first conductive layer. The non-vibration layer comprises a second UTG substrate layer, a plurality of microstructures and a second conductive layer, the microstructures are integrally formed on the surface of the second UTG substrate layer close to the vibration layer, the microstructures are protruding structures protruding towards the vibration layer and have a height greater than the depth of the first grooves, and the second conductive layer is formed on the surface of the second UTG substrate layer close to the vibration layer and covers at least the area on the surface of the second UTG substrate layer other than the microstructures. The vibration layer and the non-vibration layer are fitted with a frame, and the microstructures on the non-vibration layer are embedded in the first grooves on the vibration layer, and an air gap required for the vibration of the vibration layer is formed between the vibration layer and the non-vibration layer through the microstructures. The vibration layer further comprises a first edge trace directly formed on at least one edge of the surface of the first conductive layer close to the non-vibration layer, or a second groove is formed on at least one edge of the surface of the first UTG substrate layer close to the non-vibration layer, the first conductive layer is covered in the second groove, and the first edge trace is formed by filling metal in the second groove.

2. A directional sound emitting screen as claimed in claim 1, characterized in that And / or, the non-vibration layer further comprises a second edge trace directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the second conductive layer is covered in the third groove, and the second edge trace is formed by filling metal in the third groove. Or, the non-vibration layer further comprises a second edge trace and an edge insulating layer, the second edge trace is directly formed on at least one edge of the surface of the second conductive layer close to the vibration layer, or a third groove is formed on at least one edge of the surface of the second UTG substrate layer close to the vibration layer, the second conductive layer is covered in the third groove, the second edge trace is formed by filling metal in the third groove, and the edge insulating layer is formed on at least one edge of the surface of the second conductive layer close to the vibration layer and covers the second edge trace. When directly formed on the edge of the corresponding conductive layer, the height of the first edge trace and the second edge trace is less than or equal to 5um, and the width is less than 1mm; when filled in the groove, the height of the first edge trace and the second edge trace is greater than the depth of the corresponding groove, and the width of the part protruding from the groove is also greater than the width of the corresponding groove.

3. A directional sound emitting screen as claimed in claim 2, characterized in that ​ And / or, the height of the first and second edge traces is greater than or equal to 5um when filled in the groove, and the width of the first and second edge traces above the groove portion is less than 1mm.

4. A directional sound emitting screen according to claim 2 or 3, wherein The thickness of the edge insulation layer is less than or equal to 5um, and the width of the edge insulation layer is greater than the width of the second edge trace.

5. A directional sound emitting screen as claimed in claim 1, characterized in that The microstructure is further embedded and fixed in the first groove of the vibration layer by viscous glue; and / or, the viscous glue is arranged in the first groove, and / or, the microstructure is embedded in the first groove and wrapped by the viscous glue before the viscous glue is cured, and the viscous glue is cured after the embedding.

6. A directional sound emitting screen as defined in claim 1, wherein The vibration layer further comprises a first hardened buffer layer and an optical film layer, the first hardened buffer layer is formed on the upper end surface of the first UTG substrate layer away from the non-vibration layer, and the optical film layer is formed on the upper end surface of the first hardened buffer layer away from the non-vibration layer. And / or, the non-vibration layer further comprises a second hardened buffer layer, the second hardened buffer layer is formed on the lower end surface of the second UTG substrate layer away from the vibration layer.

7. A directional sound emitting screen as claimed in claim 6, characterized in that The thickness of the first hardened buffer layer is 15um-25um, and / or the thickness of the optical film layer is 1um-5um; and / or, the thickness of the second hardened buffer layer is 2um-4um.

8. A directional sound emitting screen as defined in claim 2, wherein The thickness of the first UTG substrate layer is 50um-100um, and / or the depth of the first groove is 20um-70um, the diameter is 20um-100um, and / or the thickness of the first conductive layer is 100nm or less, the square resistance is 70Ω-100Ω, and / or the thickness of the first insulation layer is 6um-15um, and / or the thickness of the second UTG substrate layer is 30um or more, and / or the thickness of the second conductive layer is 100nm or less, the square resistance is 70Ω-100Ω, and / or the height of the air gap is 5um-15um.

9. A directional sound emitting screen as claimed in claim 8, characterized in that The height of the microstructure is 30um-100um, the diameter is 100um-200um, and the center distance between adjacent two microstructures is 3mm-3.2mm.

10. A display device, characterized by comprising: The display device comprises the directional sound emitting screen according to any one of claims 1-9.

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