Packaging structure of high-thermal-conductivity semiconductor device
By setting heat sinks on the surface of semiconductor chips and using spherical silicon molding compound and copper-plated tin pin structures, a stable heat dissipation channel is formed, solving the heat dissipation and reliability problems of existing packaging structures and realizing a highly efficient packaging structure design.
Patent Information
- Application Number
- CN202520297439.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-02-24
- Publication Date
- 2025-12-26
- Estimated Expiration
- 2035-02-24
AI Technical Summary
Existing encapsulation materials have shortcomings in terms of heat dissipation efficiency, processability, reliability, and adaptability, making it difficult to meet the high-efficiency heat dissipation requirements of modern electronic devices.
A heat sink is placed on the surface of a semiconductor chip. The chip and the heat sink are wrapped with a molding compound containing spherical silicon, and the heat sink is partially exposed. The pin connection part is bare copper, the main body is copper-plated with tin, and thermally conductive adhesive is used to form a stable heat dissipation channel.
It improves heat dissipation, enhances processability, reliability, and adaptability, and ensures the stability of the packaging structure and efficient heat dissipation.
Smart Images
Figure CN223728768U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to a semiconductor technical field especially relates to a high heat conduction semiconductor device's packaging structure. BACKGROUND
[0002] When the chip works, a part of electric energy is converted into heat energy in the process of logic operation and current control of the transistor and other elements in the interior, and these heat needs to be dissipated in time, otherwise the chip performance will be affected and even damaged. With the rapid development of electronic technology, the performance of semiconductor devices is continuously improved, and the power density is also higher and higher, so that heat dissipation becomes a key factor affecting the performance and reliability of semiconductor devices.
[0003] The traditional packaging method has certain limitations in heat dissipation, and it is difficult to meet the demand of modern electronic equipment for high-efficiency heat dissipation. Therefore, in the prior art, the packaging method with exposed heat dissipation fins is adopted to improve the heat dissipation efficiency.
[0004] Usually, a single crystalline plastic sealing material is used for packaging in the packaging, and the purpose is to use the good thermal conductivity of the crystalline plastic sealing material to help heat dissipation.
[0005] However, although the single crystalline plastic sealing material has good thermal conductivity, it is not in the heat dissipation channel of the chip, so it has little contribution to the heat dissipation of the chip. Moreover, the thermal expansion coefficient of the single crystalline plastic sealing material often differs greatly from the materials of the chip and the heat dissipation fins. During temperature cycling, this difference will cause a large thermal stress at the interface of the combination, not only reducing the heat conduction efficiency, but also easily damaging the interface of the combination, so that the device reliability is poor. The single crystalline plastic sealing material also has poor flowability due to its irregular crystal, so on the one hand, a large pressure needs to be applied during shaping, resulting in poor process workability, on the other hand, not only the wrapping ability of the single crystalline plastic sealing material for the complex structure of the heat dissipation fins and the conductive structure is poor, but also the plastic sealing material in the plastic sealing process is difficult to enter the narrow gap between the chip and the heat dissipation fins, resulting in a decrease in the heat dissipation efficiency of the plastic sealing material, a further reduction in the contribution of the plastic sealing material to the heat dissipation of the chip, and a poor adaptability of the plastic sealing material to heat dissipation fins and conductive frames of different shapes and sizes, so that a good combination of the packaging structure cannot be formed. Therefore, the plastic sealing material of the existing packaging structure has poor effect on improving the heat dissipation efficiency, and the process, reliability and adaptability of the packaging structure are poor. UTILITY MODEL CONTENTS
[0006] The technical problem solved by the utility model is to provide a packaging structure of a high-thermal-conductivity semiconductor device, which takes into account the heat dissipation, process, reliability and adaptability.
[0007] The utility model discloses a high -thermal conductivity semiconductor device's packaging structure, including: semiconductor chip, the surface of semiconductor chip includes the connecting face, lead frame, including the heat abstractor and a plurality of pin structure, the heat abstractor sets up on the connecting face, the pin structure includes pin connecting portion and pin main part, and, at least part pin connecting portion is bare copper, and pin main part is copper tinning, plastic encapsulation material, the filler of plastic encapsulation material at least contains spherical silicon, and plastic encapsulation material is wrapped around semiconductor chip and the heat abstractor, and exposes at least part heat abstractor, makes semiconductor chip and heat abstractor are encapsulated together through plastic encapsulation material, in addition, pin connecting portion is encapsulated in plastic encapsulation material, and pin main part is exposed outside encapsulation material.
[0008] Optionally, the filler further comprises crystalline silicon.
[0009] Optionally, the crystalline silicon is less than the spherical silicon.
[0010] Optionally, the tin plating in the copper tinning is pure tin or alloy tin.
[0011] Optionally, the lead frame is roughened.
[0012] Optionally, all of the pin connecting portions are bare copper.
[0013] Optionally, part of the pin connecting portions are bare copper, and part of the pin connecting portions are copper tinned with silver.
[0014] Optionally, the end of the pin main portion and the heat abstractor are on the same side of the semiconductor chip.
[0015] Optionally, the end of the pin main portion and the heat abstractor are on opposite sides of the semiconductor chip.
[0016] Optionally, the connecting face and the heat abstractor are filled with a heat-conductive adhesive, and the heat abstractor and the connecting face are connected through the heat-conductive adhesive.
[0017] Compared with the prior art, the technical scheme of the utility model embodiment has the following beneficial effects:
[0018] The technical scheme of the utility model provides a packaging structure of high-thermal-conductivity semiconductor device, the heat dissipation piece is arranged on the connecting surface of the semiconductor chip, and the heat dissipation piece is at least partially exposed, therefore, the heat dissipation piece and the semiconductor chip jointly form a stable heat dissipation channel, the heat of the semiconductor chip is efficiently transferred to the heat dissipation fin and then radiated outward, thereby ensuring the heat dissipation property.In addition, since the filler of the plastic sealing material at least contains spherical silicon, the spherical silicon is a good flowability molten filler, and the pin connecting part is at least partially bare copper and is encapsulated in the plastic sealing material, the pin main body part is copper tinning and is exposed outside the encapsulation material, therefore, the packaging structure has good process property, reliability and adaptability, thereby, the heat dissipation property, process property, reliability and adaptability are taken into account. BRIEF DESCRIPTION OF DRAWINGS
[0019] Figure 1 It is the packaging structure profile schematic view of high-thermal-conductivity semiconductor device of an embodiment of the utility model,
[0020] Figure 2 It is the packaging structure profile schematic view of high-thermal-conductivity semiconductor device of another embodiment of the utility model
[0021] BRIEF DESCRIPTION OF DRAWINGS:
[0022] 10-semiconductor chip;11-connecting surface;
[0023] 20-heat dissipation piece;
[0024] 30-plastic sealing material;31-spherical silicon;32-crystalline silicon;
[0025] 40-pin structure;41-pin connecting part;42, 43-pin main body part;420, 430-end;
[0026] 50-thermal conductive glue. DETAILED DESCRIPTION
[0027] As described in the background art, the plastic sealing material of the existing packaging structure has poor heat dissipation efficiency improvement effect, and the process property, reliability and adaptability of the packaging structure are all poor.
[0028] The utility model discloses a high -thermal conductivity semiconductor device's packaging structure, including: semiconductor chip, the surface of semiconductor chip includes the connecting face, lead frame, including the heat dissipation part and a plurality of pin structure, the heat dissipation part sets up on the connecting face, the pin structure includes pin connecting portion and pin main part, and, at least part pin connecting portion is bare copper, and pin main part is copper tinning, plastic encapsulation material, the filler of plastic encapsulation material at least contains spheroidal silicon, and plastic encapsulation material is wrapped around semiconductor chip and the heat dissipation part, and exposes at least part heat dissipation part, makes semiconductor chip and the heat dissipation part through plastic encapsulation material encapsulation together, in addition, pin connecting portion is encapsulated in plastic encapsulation material, and pin main part exposes outside the encapsulation material.
[0029] In order to make the above-mentioned purpose, features and advantages of the utility model more obvious and easy to understand, the specific embodiments of the utility model will be described in detail below with reference to the drawings.
[0030] Figure 1 It is the packaging structure section view schematic diagram of high -thermal conductivity semiconductor device of an embodiment of the utility model.
[0031] Please refer to Figure 1 , the packaging structure of high -thermal conductivity semiconductor device includes: semiconductor chip 10, plastic encapsulation material 30 and lead frame.
[0032] Among them, the surface of semiconductor chip 10 includes connecting face 11.
[0033] Among them, lead frame includes: heat dissipation part 20 and a plurality of pin structure 40.In some embodiments, heat dissipation part 20 is connected with at least 1 pin structure 40.Other embodiments, heat dissipation part 20 and all pin structure 40 are independent of each other.
[0034] Heat dissipation part 20 sets up on connecting face 11. Among them, connecting face 11 is used to define the part surface of the surface of semiconductor chip 10 for setting heat dissipation part.
[0035] Pin structure 40 includes: pin connecting portion 41 and pin main part 42. Among them, pin connecting portion 41 is encapsulated in plastic encapsulation material 30, and pin main part 42 exposes outside plastic encapsulation material 30, and, at least part pin connecting portion 41 is bare copper, and pin main part 42 is copper tinning.
[0036] The filler of plastic encapsulation material 30 at least contains spheroidal silicon 31, and plastic encapsulation material 30 is wrapped around semiconductor chip 10 and heat dissipation part 20, and exposes at least part heat dissipation part 20, makes semiconductor chip 10 and heat dissipation part 20 through plastic encapsulation material 30 encapsulation together.
[0037] The semiconductor chip 10 provided by the embodiment of the utility model, the heat dissipation piece 20 is arranged on the connecting surface 11 of the semiconductor chip 10, and the heat dissipation piece 20 is at least partially exposed, therefore, the heat dissipation piece 20 and the semiconductor chip 10 jointly form stable heat dissipation channels, the heat of the semiconductor chip 10 is efficiently transferred to the heat dissipation fin and then radiated outward, thereby, the heat dissipation property is ensured.
[0038] Furthermore, since the filler of the plastic encapsulation material 30 at least contains spherical silicon 31, and at least part of the pin connecting part 41 is bare copper and is encapsulated in the plastic encapsulation material 30, and the pin body part 42 is copper tinned and exposed outside the encapsulation material, the encapsulation structure has good processability, reliability and adaptability.
[0039] Specifically, the spherical silicon 31 is a flowable and melt-type filler with an expansion coefficient close to that of the semiconductor chip and the heat dissipation piece (usually metal). Therefore, in the first aspect, the required pressure during shaping is small, and the process operation is good. In the second aspect, the encapsulation capability for the complex structure of the heat dissipation piece 20 and the pin connecting part 41 is good, and the plastic encapsulation material 30 easily enters the narrow gap between the chip and the heat dissipation piece 20 and the connecting part 41 during the encapsulation process, thereby, a uniform and dense encapsulation structure can be formed for heat dissipation pieces 20 and connecting parts 41 of different shapes and sizes, and the interface between the plastic encapsulation material 30 and the heat dissipation piece 20 and the connecting part 41 is stable and well bonded. In the third aspect, the thermal stress generated at the interface between the plastic encapsulation material 30 and the semiconductor chip 10, the heat dissipation piece 20 and the pin connecting part 41 is small under different temperature conditions, and the plastic encapsulation material 30 and the semiconductor chip 10, the heat dissipation piece 20 and the pin connecting part 41 can maintain close contact, thereby, the thermal resistance can be reduced, the heat dissipation efficiency can be improved, and the interface bonding reliability is good.
[0040] Moreover, at least part of the pin connecting portion 41 is bare copper and is encapsulated in the plastic encapsulation 30, thus, it is also beneficial to strengthen the bonding stability and bonding strength of the plastic encapsulation 30 and the lead frame. Specifically, on the one hand, the surface energy of copper is relatively high and has certain chemical activity, and in the plastic encapsulation process, it can react with some active groups in the plastic encapsulation 30 to form chemical bonds, thereby improving the bonding force. For example, the copper surface is easily oxidized to form copper oxide, which can react with some components in the plastic encapsulation 30 to enhance the bonding between the two. On the other hand, the roughness of the copper surface is relatively high, and after some surface treatment processes, a certain microstructure will be formed on the surface, such as small protrusions, grooves, etc. This rough surface can increase the contact area with the plastic encapsulation 30, so that the plastic encapsulation 30 can better fill and adhere to the copper surface, thereby improving the mechanical embedding effect and enhancing the bonding degree. Moreover, the thermal expansion coefficient of copper is close to that of the plastic encapsulation 30. Electronic products will undergo different temperature changes during use. Since the thermal expansion coefficients of copper and the plastic encapsulation 30 are relatively matched, the thermal stress generated between the two during thermal cycling is relatively small, which helps to maintain the bonding stability between the two and avoid problems such as cracking or peeling of the bonding interface due to excessive thermal stress.
[0041] In addition, since the pin body portion 42 is copper-plated tin and is exposed outside the encapsulation, it can improve its oxidation resistance, solderability and help improve the heat dissipation performance.
[0042] Therefore, in general, the packaging structure of the high-thermal-conductivity semiconductor device in the embodiment considers heat dissipation, processability, reliability and adaptability.
[0043] Further, the heat dissipation member 20 can be a heat dissipation fin or other structure, such as a composite structure with heat dissipation fins, etc. The shape of the heat dissipation fin can also be designed according to the needs, including but not limited to rectangular, rhombic or irregular shapes, etc. to increase the heat dissipation area.
[0044] The material of the heat dissipation member 20 can be copper or copper alloy, etc.
[0045] In some embodiments, the filler of the plastic encapsulation 30 also includes crystalline silicon 32. That is, the filler of the plastic encapsulation 30 is a mixed filler including at least spherical silicon 31 and crystalline silicon 32.
[0046] The filler of the plastic sealing material 30 also includes crystalline silicon 32, that is, the plastic sealing material 30 has a mixed filler, so that the heat conduction capacity of the plastic sealing material 30 body is improved compared with a single molten filler, so that the plastic sealing material 30 can not only mechanically protect and electrically insulate the semiconductor chip 10 and the heat dissipation member 20 and ensure the stability of the overall package to prevent the semiconductor chip 10 from being affected by the external environment such as humidity, dust, mechanical impact, etc., and on the basis of stable and close combination of the interface between the plastic sealing material 30 and the heat dissipation member 20 and the pin connecting part 41, the improved heat conduction capacity of the plastic sealing material 30 can effectively help improve the heat dissipation efficiency.
[0047] Further, the crystalline silicon 32 is less than the spherical silicon 31 to avoid defects similar to single crystalline plastic sealing material.
[0048] Further, the crystalline silicon can be silicon dioxide and the like.
[0049] In some embodiments, the pin connecting part 41 is all bare copper.
[0050] In other embodiments, part of the pin connecting part 41 is bare copper, and part of the pin connecting part 41 is copper plated with silver. Thus, the connection between the semiconductor chip and the pin connecting part 41 is also better through copper plating with silver.
[0051] In some embodiments, the tin plating in the copper plating with tin is pure tin or alloyed tin.
[0052] In some embodiments, the lead frame is subjected to roughening treatment to further increase the roughness of the surface of the lead frame, so that the pin connecting part 41 has stronger interface bonding capacity with the plastic sealing material 30, to further improve the anti-delamination capacity.
[0053] It should be noted that the method of roughening treatment is the existing technology in the art, including chemical roughening method, electroplating roughening method, laser roughening method, etc., which is not limited here.
[0054] Of course, the lead frame can also not be subjected to roughening treatment.
[0055] In the present embodiment, the end 420 of the pin body part 42 is located on the side opposite to the semiconductor chip 10 relative to the heat dissipation member 20.
[0056] In another embodiment, as shown in Figure 2 , the end 430 of the pin body part 43 is located on the same side of the semiconductor chip 10 relative to the heat dissipation member 20.
[0057] That is, as shown in Figure 1 and Figure 2 , the connecting surface 11 can be located on the upper surface of the semiconductor chip 10 (as shown in Figure 1The semiconductor chip 10 can be located on the upper surface of the semiconductor chip 10 (as shown in the figure) or on the lower surface of the semiconductor chip 10 (as shown in the figure). Figure 2
[0058] In the embodiment, the connecting surface 11 and the heat dissipating member 20 are filled with the heat conductive glue 50. The heat conductive glue 50 has good heat conduction capacity, so that the heat of the semiconductor chip 10 can be transmitted to the heat dissipating member 20 more quickly, and the heat dissipating channel formed by the semiconductor chip 10 and the heat dissipating member 20 is more stable and efficient.
[0059] Specifically, the heat conductive glue 50 can contain metal fillers such as silver.
[0060] Although the utility model discloses as above, the utility model is not limited to this. Any person skilled in the art, without departing from the spirit and scope of the utility model, can make various changes and modifications, therefore the protection scope of the utility model should be the range defined by the claims.
Claims
1. A package structure of a high thermal conductive semiconductor device, characterized by, The application relates to a semiconductor chip, a lead frame and a packaging material. The semiconductor chip comprises a connecting surface; The lead frame comprises a heat dissipating member and a plurality of pin structures, the heat dissipating member is arranged on the connecting surface, the pin structure comprises a pin connecting part and a pin body part, at least part of the pin connecting part is bare copper, and the pin body part is copper plated with tin; The packaging material is filled with at least spherical silicon, the packaging material is wrapped around the semiconductor chip and the heat dissipating member, at least part of the heat dissipating member is exposed, the semiconductor chip and the heat dissipating member are packaged together through the packaging material, in addition, the pin connecting part is packaged in the packaging material, and the pin body part is exposed outside the packaging material.
2. The package structure of a high thermal conductivity semiconductor device according to claim 1, wherein The packaging material further comprises crystalline silicon.
3. The package structure of a high thermal conductivity semiconductor device according to claim 2, wherein The amount of the crystalline silicon is less than that of the spherical silicon.
4. The package structure of a high-thermal-conductivity semiconductor device according to claim 1, wherein The tin plating in the copper plated with tin is pure tin or alloyed tin.
5. The package structure of a high-thermal-conductivity semiconductor device according to claim 1, wherein The lead frame is subjected to roughening treatment.
6. The package structure of a high-thermal-conductivity semiconductor device according to claim 1, wherein All the pin connecting parts are bare copper.
7. The package structure of a high-thermal-conductivity semiconductor device according to claim 1, wherein Part of the pin connecting parts are bare copper, and part of the pin connecting parts are copper plated with silver.
8. The package structure of a high-thermal-conductivity semiconductor device according to claim 1, wherein The terminal end of the pin body part and the heat dissipating member are located on the same side of the semiconductor chip.
9. The package structure of a high-thermal-conductivity semiconductor device according to claim 1, wherein The terminal end of the pin body part and the heat dissipating member are respectively located on the opposite sides of the semiconductor chip.
10. The package structure of a high-thermal-conductivity semiconductor device according to claim 1, wherein The connecting surface and the heat dissipating member are filled with heat conductive glue, and the heat dissipating member is connected with the connecting surface through the heat conductive glue.