Electron beam deflection acceleration device and semiconductor device detection equipment

Abstract

The utility model relates to the technical field of semiconductor detection, in particular to an electron beam deflection acceleration device and semiconductor device detection equipment. The electron beam deflection acceleration device comprises a supporting cylinder, an acceleration cylinder and one or more deflection assemblies. The support cylinder is made of an insulating material and defines a through channel. When the multiple deflection assemblies are arranged, the multiple deflection assemblies are sequentially arranged at intervals in the axial direction of the penetrating channel. Each deflection assembly is arranged on the outer circumferential wall of the supporting cylinder and provided with at least one deflection coil used for generating a magnetic field. The acceleration cylinder defines an electron beam channel; the speed increasing cylinder extends in the axial direction of the penetrating channel, and at least part of the speed increasing cylinder is located in the penetrating channel. The electron beam deflection accelerating device provided by the utility model has the advantages of simple structure, low production cost and low use cost.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor detection, especially to an electron beam deflection acceleration device and a semiconductor device detection equipment. BACKGROUND

[0002] The electron beam deflection acceleration device is an important component of the electron beam detection equipment. Figures 1 to 3 As shown in the figure, the existing electron beam deflection acceleration device includes an electron beam emission source 1, a detector 2, a deflector support 3, a first deflector 4, a second deflector 5, a total support 6, a high-voltage support 7, and an electron beam high-voltage acceleration piece 8. The working process of the electron beam deflection acceleration device is as follows: the main electron beam 12 is emitted from the electron beam emission source 1, passes through the center hole of the detector 2, the deflector support 3, the first deflector 4, the second deflector 5, the total support 6, the high-voltage support 7, and the electron beam high-voltage acceleration piece 8 in turn, and finally hits the detected sample 9; secondary electrons or backscattered electrons 11 are generated on the detected sample 9, are received by the detector 2, and after a series of processing and conversion, the microscopic morphology of the surface of the detected sample 9 can be obtained. In the above process, when the main electron beam passes through the inside of the first deflector 4 and the second deflector 5, by applying corresponding voltages to the input of each pole plate 10, a horizontal electric field force is applied to the electron beam, causing the electron beam to deflect, so that the electron beam can scan a larger range on the surface of the detected sample 9, thereby obtaining defects in a larger range on the surface of the sample. At the same time, an acceleration voltage is applied to the electron beam high-voltage acceleration piece 8, and when the main electron beam passes through the electron beam high-voltage acceleration piece 8, it can be accelerated by the high-voltage electric field, so that the main electron beam obtains higher speed and greater energy to hit the detected sample 9, thereby obtaining more secondary electrons and backscattered electrons, and the detector 2 can receive more signals.

[0003] However, the existing electron beam deflection acceleration device has the following problems: ①The structure of the electron beam deflection acceleration device is complex, and the coaxiality between the first deflector 4, the second deflector 5, and the electron beam high-voltage acceleration piece 8 needs to be ensured during installation, resulting in high assembly difficulty and high assembly cost. ②In order to ensure the shape and position accuracy of each pole plate 10, the first deflector 4 and the second deflector 5 are cut twice from a whole piece of metal, resulting in low part processing yield, high processing precision, and high processing cost. ③The deflector uses electric field deflection, which has high cost, and there is a risk of discharge and sparking between each deflection electrode, which requires special treatment each time, resulting in high use cost. In summary, the existing electron beam deflection acceleration device has the problems of complex structure, high production cost, and high use cost. UTILITY MODEL CONTENTS

[0004] In view of the above problems, the utility model provides an electron beam deflection acceleration device and a semiconductor device detection equipment to overcome the above problems or at least partially solve the above problems.

[0005] An object of the utility model is to simplify the structure of the electron beam deflection acceleration device and reduce the production cost and use cost.

[0006] Another object of the utility model is to improve the acceleration ability of the speed increasing cylinder on the electron beam to improve the kinetic energy of the electron beam.

[0007] Specifically, the utility model provides an electron beam deflection acceleration device for semiconductor device detection equipment, including:

[0008] The support cylinder is made of insulating material and defines a through channel;

[0009] One or more deflection assemblies are sequentially and spacedly arranged along the axial direction of the through channel, each of the deflection assemblies is arranged on the outer peripheral wall of the support cylinder and has at least one deflection coil for generating a magnetic field;

[0010] The speed increasing cylinder extends along the axial direction of the through channel and is at least partially located in the through channel, and the speed increasing cylinder defines an electron beam channel.

[0011] Optionally, the support cylinder includes:

[0012] The speed increasing section is provided with the deflection assembly on the outer peripheral wall thereof;

[0013] The power connection section is connected with the speed increasing section, and the through channel defined by the power connection section has a diameter greater than that of the through channel defined by the speed increasing section, so that a stepped surface is formed at the position where the speed increasing section and the power connection section are connected;

[0014] The flange is arranged on the peripheral wall of the speed increasing cylinder and is arranged on the stepped surface.

[0015] Optionally, the flange is provided with an electrical connector.

[0016] Optionally, one end of the speed increasing cylinder is located in the power connection section, and the other end of the speed increasing cylinder extends out of the through channel from the speed increasing section.

[0017] The ratio between the length of the speed increasing cylinder extending out of the through channel and the length of the speed increasing cylinder is 1 / 8 to 1 / 5.

[0018] Optionally, the deflection assemblies are multiple, and the deflection assemblies are arranged on the outer peripheral wall of the speed increasing section.

[0019] Optionally, the electron beam deflection accelerating device further comprises:

[0020] at least one coil winding block, each of the coil winding blocks extending outward from the outer peripheral wall of the support cylinder, the coil winding blocks being arranged one-to-one with the deflection coils, and each of the deflection coils being wound on the corresponding coil winding block.

[0021] Optionally, the electron beam deflection accelerating device further comprises:

[0022] at least one coil fixing unit, the coil fixing units being arranged one-to-one with the deflection coils, and each of the coil fixing units comprising two fixing columns for fixing two ends of the corresponding deflection coil respectively, each of the fixing columns extending outward from the outer peripheral wall of the support cylinder;

[0023] each of the coil fixing units being arranged on one side of the corresponding coil winding block along the axial direction of the through channel.

[0024] Optionally, the deflection coils in each of the deflection assemblies are multiple, and the multiple deflection coils are arranged uniformly along the circumferential direction of the through channel.

[0025] the outer peripheral wall of the support cylinder comprises multiple sides facing different directions, and the multiple sides are arranged uniformly along the circumferential direction of the through channel, and the multiple deflection coils in each of the deflection assemblies and the multiple sides are arranged one-to-one.

[0026] Optionally, the inner peripheral wall of the speed increasing cylinder is coaxially arranged with the outer peripheral wall of the speed increasing section.

[0027] the insulating material is alumina ceramic or aluminum nitride ceramic.

[0028] According to another aspect of the present application, there is also provided a semiconductor device detection apparatus, comprising:

[0029] a support device configured to support a semiconductor device under test;

[0030] an emission device configured to emit an electron beam to the semiconductor device under test;

[0031] the electron beam deflection accelerating device as claimed in any one of the preceding claims is arranged between the emission device and the support device, so that the electron beam reaches the semiconductor device under test via the electron beam channel;

[0032] a detector arranged at an end of the through channel away from the support device, for receiving signal particles reflected by the semiconductor device under test.

[0033] In the electron beam deflection accelerating device and the semiconductor device detection equipment, on the one hand, the deflection assembly adopts electromagnetic deflection, thereby avoiding the risk of sparking and discharging between the deflection electrodes in the prior art; the deflection assembly does not need to be specially treated each time of use, thereby reducing the use cost; and compared with the existing electric field deflection type deflector, the deflection assembly has small processing difficulty and low processing cost.

[0034] On the other hand, the deflection assembly is mounted on the outer peripheral wall of the support cylinder, and the speed increasing cylinder is inserted into the support cylinder; the support cylinder can simultaneously serve as a support component of the deflection assembly and the speed increasing cylinder; therefore, the structure of the electron beam deflection accelerating device is greatly simplified; the coaxiality of the deflection assembly and the speed increasing cylinder does not need to be ensured, thereby reducing the assembly difficulty and the assembly cost, and improving the yield of the components.

[0035] On the other hand, the deflection assembly is mounted on the outer peripheral wall of the support cylinder, and the speed increasing cylinder is inserted into the support cylinder; the support cylinder can simultaneously serve as a support component of the deflection assembly and the speed increasing cylinder; therefore, the structure of the electron beam deflection accelerating device is greatly simplified; the coaxiality of the deflection assembly and the speed increasing cylinder does not need to be ensured, thereby reducing the assembly difficulty and the assembly cost, and improving the yield of the components.

[0036] In summary, compared with the prior art, the electron beam deflection accelerating device has the advantages of simple structure, convenient manufacturing and assembly, and low production cost and use cost.

[0037] The above and other objects, advantages and features of the present application will become more apparent from the following detailed description of some embodiments thereof, taken in conjunction with the accompanying drawings. BRIEF DESCRIPTION OF DRAWINGS

[0038] Some embodiments of the present application will be described in detail with reference to the drawings, wherein the same or similar components have the same reference numerals, and typically the first reference numerals will be shown in the drawings. It is understood that the drawings are not necessarily to scale. In the drawings:

[0039] Figure 1 is a schematic structural view of an electron beam deflection accelerating device of the related art;

[0040] Figure 2 is a schematic structural view of a first deflector in the present application; Figure 1

[0041] Figure 3 is a schematic structural view of a second deflector in the present application; Figure 1

[0042] Figure 4 is a schematic sectional view of a semiconductor device detection equipment according to an embodiment of the present application;​​

[0043] Figure 5 is a schematic structural view of an electron beam deflection acceleration device according to an embodiment of the present application;

[0044] Figure 6 is a schematic sectional view of an electron beam deflection acceleration device according to an embodiment of the present application. DETAILED DESCRIPTION

[0045] The electron beam deflection acceleration device and the semiconductor device detection equipment according to the embodiments of the present application will be described below with reference to Figures 4 to 6 In the description of the embodiments of the present application, it should be understood that the terms "first" and "second" are used only for the purpose of description, and should not be understood as indicating or implying relative importance or implicitly indicating the number of the technical features indicated. Therefore, the features defined as "first" and "second" can explicitly or implicitly include at least one of the features, i.e. one or more of the features. In the description of the present application, the meaning of "a plurality of" is at least two, such as two, three, etc., unless otherwise specifically limited. When a certain feature "includes or contains" a certain or certain features, unless otherwise specifically described, it indicates that other features and can further include other features.

[0046] Unless otherwise specifically defined and limited, the terms "set", "mount", "connected", "connected", "fixed", "coupled" and other terms should be understood in a broad sense, for example, can be fixedly connected, or can be detachably connected, or can be integrated; can be mechanically connected, or can be electrically connected; can be directly connected, or can be indirectly connected through an intermediate medium; can be the internal communication or interaction relationship of two elements, unless otherwise specifically limited. Those skilled in the art should be able to understand the specific meaning of the above terms in the present application according to the specific circumstances.

[0047] In addition, in the description of the embodiments of the present application, the first feature "above" or "below" the second feature can include that the first and second features are in direct contact, or can include that the first and second features are not in direct contact but are in contact through another feature between them. That is, in the description of the embodiments of the present application, the first feature "above", "above" and "above" the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the first feature is higher than the second feature in horizontal height. The first feature "below", "below" or "below" the second feature can be that the first feature is directly below or obliquely below the second feature, or only indicates that the first feature is lower than the second feature in horizontal height.

[0048] In the description of the embodiments, the description of the terms "one embodiment", "some embodiments", "exemplary embodiment", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the utility model. In the specification, the exemplary description of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner.

[0049] Figure 4 is the schematic structural diagram of the semiconductor device detection equipment of one embodiment of the utility model, as Figure 1 shown, and referring to Figures 5 to 6 , the utility model embodiment provides a kind of electron beam deflection acceleration device 100 for semiconductor device detection equipment, and the electron beam deflection acceleration device 100 includes support cylinder 110, speed increasing cylinder 120, one or more deflection components 130.Support cylinder 110 is made of insulating material, support cylinder 110 defines through channel.When deflection component 130 is multiple, multiple deflection components 130 are sequentially spaced along the axial direction of through channel.Each deflection component 130 is arranged on the outer peripheral wall of support cylinder 110, and each deflection component 130 has at least one deflection coil 131 for generating magnetic field.Speed increasing cylinder 120 defines electron beam channel 121;Speed increasing cylinder 120 extends along the axial direction of through channel, and at least part of speed increasing cylinder 120 is located in through channel.

[0050] In the embodiment, deflection coil 131 of deflection component 130 generates magnetic field after energization.When main electron beam flows through deflection component 130, it will be subjected to a magnetic field force perpendicular to the direction of motion of electron beam (axial direction of through channel), so that the deflection of electron beam can be generated.When electron beam passes through speed increasing cylinder 120, it will be accelerated.Finally, electron beam will be emitted to the surface of the semiconductor device to be detected.

[0051] On the one hand, since deflection component 130 adopts electromagnetic deflection, the risk of sparking and discharging between deflection electrodes in the prior art is avoided, and the deflection component 130 does not need to be specially treated each time it is used, thereby reducing the use cost. And when manufacturing, only need to wind coil, can be completed at one time, avoid complex electrode production. Compared with the existing electric field deflection type deflector, the embodiment greatly reduces the processing difficulty of deflection component 130, reduces the processing cost of deflection component 130, and improves the yield of deflection component 130.

[0052] In another aspect, since the deflection assembly 130 is mounted on the outer peripheral wall of the support cylinder 110 and the velocity-increasing cylinder 120 is inserted into the support cylinder 110, the support cylinder 110 can simultaneously serve as a support component of the deflection assembly 130 and the velocity-increasing cylinder 120. Therefore, compared with the prior art, the structure of the electron beam deflection accelerating device 100 is greatly simplified, and the coaxiality of the deflection assembly 130 and the velocity-increasing cylinder 120 does not need to be ensured, thereby reducing the assembly difficulty and assembly cost and improving the yield of parts.

[0053] In another aspect, since the support cylinder 110 is made of an insulating material and the velocity-increasing cylinder 120 is at least partially located in the through passage, the risk of high-voltage sparking of the velocity-increasing cylinder 120 can be reduced under the insulation of the support cylinder 110 during the operation of the electron beam deflection accelerating device 100.

[0054] In summary, compared with the prior art, the embodiment simplifies the structure of the electron beam deflection accelerating device 100 and reduces the production cost and use cost.

[0055] As shown in Figure 6 In some embodiments of the utility model, the support cylinder 110 includes an electricity-connection section 111 and a velocity-increasing section 112. The deflection assembly 130 is arranged on the outer peripheral wall of the velocity-increasing section 112. The electricity-connection section 111 is connected to the velocity-increasing section 112, and the diameter of the through passage defined by the electricity-connection section 111 is greater than the diameter of the through passage defined by the velocity-increasing section 112, so that a stepped surface is formed at the position where the inside of the velocity-increasing section 112 is connected to the electricity-connection section 111. The flange is arranged on the peripheral wall of the velocity-increasing cylinder and is lapped on the stepped surface.

[0056] Specifically, the flange is generally plate-shaped. The first section 1111 defining the through passage is arranged in the electricity-connection section 111. The velocity-increasing section 112 is connected to the electricity-connection section 111, and the second section defining the through passage is arranged in the velocity-increasing section 112 and is connected to the first section 1111. That is, the first section 1111 and the second section form the through passage. The stepped surface is formed at the position where the first section 1111 and the second section are connected. That is, the bottom of the first section 1111 forms the stepped surface. The flange 122 arranged on the peripheral wall of the velocity-increasing cylinder 120 is arranged in the first section 1111.

[0057] The support cylinder 110 of the embodiment has a simple and scientific and reasonable structure, which includes the electricity-connection section 111 and the velocity-increasing section 112. The electricity-connection section 111 and the velocity-increasing section 112 are arranged in sequence along the axis of the through passage. The electricity-connection section 111 can realize electricity connection to the velocity-increasing cylinder 120. During assembly, the velocity-increasing cylinder 120 can be inserted into the velocity-increasing section 112 through the electricity-connection section 111, and the flange 122 arranged on the peripheral wall of the velocity-increasing cylinder 120 can be arranged on the stepped surface, so that the velocity-increasing cylinder 120 can be mounted on the support cylinder 110. The above assembly process is simple and easy to operate, has high assembly efficiency and low assembly cost.

[0058] like Figure 6 As shown, in some embodiments of this utility model, an electrical connector is provided on the flange 122. This electrical connector is a high-voltage electrical connector, which can be a terminal block, a plug-in, or a connector. The speed-increasing cylinder 120 is a high-voltage speed-increasing cylinder. In this embodiment, by placing the flange 122 on the stepped surface, the speed-increasing cylinder 120 and the energized section 111 can be electrically connected. This electrical connection method is simple and easy to operate.

[0059] like Figure 6 As shown, in some embodiments of this utility model, one end of the speed-increasing cylinder 120 is located within the energized section 111, and the other end of the speed-increasing cylinder 120 extends through the passage from the speed-increasing section 112. That is, one end of the speed-increasing cylinder 120 is located within the first section 1111, and the other end of the speed-increasing cylinder 120 extends through the passage from the second section. The ratio between the length of the speed-increasing cylinder 120 extending through the passage and the length of the speed-increasing cylinder 120 is 1 / 8 to 1 / 5.

[0060] Generally, the longer the speed-increasing cylinder 120, the stronger its ability to accelerate the electron beam. This embodiment, through the above-described configuration, increases the length of the speed-increasing cylinder 120, thereby enhancing its acceleration capability and facilitating the increase of the electron beam's kinetic energy. This results in the electron beam having higher energy when impacting the surface of the semiconductor device under test (e.g., a wafer). This facilitates more precise and in-depth processing on the semiconductor device under test, such as etching, deposition, or inspection.

[0061] Furthermore, generally speaking, the acceleration speed of the electron beam is positively correlated with the processing speed on the semiconductor device under test. That is, the faster the electron beam accelerates, the faster the processing speed on the semiconductor device under test. Therefore, this embodiment can also improve the speed and efficiency of processing the semiconductor device under test.

[0062] In some embodiments of this invention, the deflection component 130 is a single component, disposed on the outer peripheral wall of the speed-up section 112. This embodiment is suitable for wafer processing tasks with low precision and efficiency requirements, such as simple etching, deposition, and inspection.

[0063] like Figures 4 to 6 As shown, in some embodiments of this utility model, there are multiple deflection components 130, which are disposed on the outer peripheral wall of the speed-up section 112, and the multiple deflection components 130 are arranged at intervals along the axial direction of the speed-up section.

[0064] In this embodiment, multiple deflection components 130 are used, enabling more complex scanning paths and more flexible scanning modes. By combining the parameter settings of different deflection components 130, the deflection angle and scanning range of the electron beam can be precisely controlled, thereby meeting the processing requirements of different regions on the semiconductor device under test. The combined use of multiple deflection components 130 can compensate and correct each other, reducing scanning errors caused by errors in a single deflection component 130. Therefore, this embodiment is suitable for high-precision, high-flexibility, and high-efficiency wafer processing tasks, such as complex etching, deposition, and inspection in advanced semiconductor manufacturing.

[0065] In some embodiments of this utility model, each deflection coil 131 is bonded to the outer peripheral wall of the support cylinder 110.

[0066] like Figures 4 to 6 As shown, in some embodiments of the present invention, the electron beam deflection acceleration device 100 further includes at least one coil winding block 140, each coil winding block 140 extending outward from the outer peripheral wall of the support cylinder 110; the coil winding blocks 140 are arranged in a one-to-one correspondence with the deflection coils 131, and each deflection coil 131 is wound on the corresponding coil winding block 140.

[0067] In this embodiment, by providing a coil winding block 140 on the outer peripheral wall of the support cylinder 110, the installation of the deflection coil 131 can be facilitated. Specifically, during assembly, the deflection coil 131 is simply wound around the coil winding block 140. Therefore, the assembly of the deflection coil 131 is simple, the assembly cost is low, and the assembly efficiency is high.

[0068] like Figures 4 to 6 As shown, in some embodiments of this utility model, the electron beam deflection acceleration device 100 further includes at least one coil fixing unit 150. The coil fixing unit 150 is arranged in a one-to-one correspondence with the deflection coil 131; each coil fixing unit 150 includes two fixing posts for fixing the two ends of the corresponding deflection coil 131, each fixing post extending outward from the outer peripheral wall of the support cylinder 110; each coil fixing unit 150 is disposed on one side of the corresponding coil winding block 140 along the axial direction of the through channel. For example, when the axial direction of the through channel is vertical, each coil fixing unit 150 can be disposed on the upper or lower side of the corresponding coil winding block 140.

[0069] In this embodiment, after the deflection coil 131 is wound around the coil winding block 140, the two ends of the deflection coil 131 are respectively connected to two fixed posts, which makes the installation of the deflection coil 131 more secure and avoids the position of the deflection coil 131 from shifting during use, thus affecting the scanning accuracy.

[0070] like Figures 4 to 6As shown, in some embodiments of this invention, each deflection component 130 contains multiple deflection coils 131, which are uniformly arranged along the circumferential direction of the through channel. This embodiment is beneficial for improving the deflection capability of each deflection component 130 on the electron beam, thereby increasing the scanning range of the electron beam and thus improving scanning efficiency.

[0071] In some embodiments of this utility model, the outer peripheral wall of the support cylinder 110 is a cylindrical surface.

[0072] like Figures 5 to 6 As shown, in some embodiments of this utility model, the outer peripheral wall of the support cylinder 110 includes multiple side surfaces 114 facing different directions, and the multiple side surfaces 114 are evenly arranged along the circumferential direction of the through channel; the multiple deflection coils 131 in each deflection assembly 130 are correspondingly arranged with the multiple side surfaces 114. Compared with the previous embodiment, this embodiment, by providing multiple side surfaces 114 on the outer peripheral wall of the support cylinder 110, facilitates the even installation of multiple deflection coils 131 on the outer peripheral wall of the support cylinder 110.

[0073] In some embodiments of this utility model, the inner peripheral wall of the speed-increasing cylinder 120 is coaxially arranged with the outer peripheral wall of the speed-increasing section, so that the distance between each deflection coil and the center of the electronic channel is consistent, which facilitates the control of the deflection component and the application of magnetism.

[0074] In some embodiments of this invention, the support cylinder 110 is made of alumina ceramic. Alumina ceramic has excellent insulation properties.

[0075] In some embodiments of this invention, the support cylinder 110 is made of aluminum nitride ceramic. Aluminum nitride ceramic has good insulation properties.

[0076] like Figure 4 As shown in the illustration, this utility model embodiment also provides a semiconductor device testing apparatus, including a support device 400, an emitting device 200, an electron beam deflection and acceleration device 100, and a detector 300. The support device 400 is configured to support the semiconductor device under test. The emitting device 200 is configured to emit an electron beam toward the semiconductor device under test. The electron beam deflection and acceleration device 100 is the electron beam deflection and acceleration device 100 as described in the above embodiment. The electron beam deflection and acceleration device 100 is disposed between the emitting device 200 and the support device 400, so that the electron beam reaches the semiconductor device under test via the electron beam channel 121. The detector 300 is disposed at one end of the through-channel opposite to the support device 400, and is used to receive signal particles reflected by the semiconductor device under test.

[0077] Specifically, the semiconductor device detection equipment is an electron beam detection equipment. In operation, the main electron beam is emitted from the electron beam emission source of the emission device 200, sequentially passes through the center hole of the detector 300, the support cylinder 110 of the electron beam deflection acceleration device 100, the deflection assembly 130 and the speed-up cylinder 120, and finally hits the semiconductor device under test. The secondary electrons or backscattered electrons generated on the semiconductor device under test are received by the detector 300, and after a series of processing and conversion, the micro-topography on the surface of the semiconductor device under test can be obtained.

[0078] Compared with the prior art, the semiconductor device detection equipment has the advantages of simple structure, small processing difficulty, small assembly difficulty, high yield, low production cost and low use cost.

[0079] In some embodiments of the utility model, the semiconductor device detection equipment further comprises a shell 500, and the shell 500 is used for mounting the electron beam deflection acceleration device 100. An installation cylinder 510 is defined in the shell 500, and the upper cover of the shell 500 is formed with a first insertion opening in communication with the installation cylinder 510, and the base of the shell 500 is formed with a second insertion opening in communication with the installation cylinder 510. The outer peripheral wall of one end of the support cylinder 110 is formed with an outward flange 113. When the electron beam deflection acceleration device 100 is assembled to the shell 500, one end of the protruding through channel of the speed-up cylinder 120 is sequentially extended to the outside of the shell 500 through the first insertion opening, the installation cylinder 510 and the second insertion opening, so that one end of the protruding through channel of the speed-up cylinder 120 is close to the support device 400, and the outward flange 113 of the support cylinder 110 abuts against the upper cover of the shell 500. In the embodiment, the installation cylinder 510 has a guiding effect, which facilitates the assembly of the electron beam deflection acceleration device 100. In addition, the installation cylinder 510 also has a limiting effect, which can avoid the shaking of the electron beam deflection acceleration device 100 during operation and affect the scanning precision.

[0080] At this point, those skilled in the art should realize that although the plurality of exemplary embodiments of the utility model have been shown and described in detail herein, many other variants or modifications conforming to the principles of the utility model can be directly determined or deduced according to the disclosure of the utility model without departing from the spirit and scope of the utility model. Therefore, the scope of the utility model should be understood and recognized as covering all these other variants or modifications.

Claims

1. An electron beam deflection acceleration device for a semiconductor device inspection apparatus, characterized by, include: The support cylinder is made of insulating material and defines a through-channel; One or more deflection components are arranged sequentially at intervals along the axial direction of the through channel. Each deflection component is disposed on the outer peripheral wall of the support cylinder and has at least one deflection coil for generating a magnetic field. An acceleration cylinder extends along the axial direction of the through channel and is at least partially located within the through channel, the acceleration cylinder defining an electron beam channel.

2. The electron beam deflection acceleration device according to claim 1, wherein The support cylinder includes: The deflection component is provided on the outer peripheral wall of the acceleration section; A power-connecting section is connected to the speed-up section, and the diameter of the through-channel defined by the power-connecting section is larger than the diameter of the through-channel defined by the speed-up section, thereby forming a stepped surface at the junction of the speed-up section and the power-connecting section. The speed-increasing cylinder has a flange on its peripheral wall, and the flange rests on the stepped surface.

3. The electron beam deflection and acceleration device according to claim 2, characterized in that, An electrical connector is provided on the flange.

4. The electron beam deflection and acceleration device according to claim 2, characterized in that, One end of the speed-increasing cylinder is located within the power-connected section, and the other end of the speed-increasing cylinder extends out of the through-channel from the speed-increasing section; The ratio between the length of the speed-increasing cylinder extending out of the through-channel and the length of the speed-increasing cylinder is 1 / 8 to 1 / 5.

5. The electron beam deflection and acceleration device according to claim 2, characterized in that, There are multiple deflection components, which are disposed on the outer peripheral wall of the acceleration section.

6. The electron beam deflection acceleration device of claim 1, wherein Also includes: At least one coil winding block, each of the coil winding blocks extending outward from the outer peripheral wall of the support cylinder; the coil winding blocks are arranged in a one-to-one correspondence with the deflection coils, and each deflection coil is wound on the corresponding coil winding block.

7. The electron beam deflection acceleration device of claim 6, wherein Also includes: At least one coil fixing unit is provided, and the coil fixing unit is provided in a one-to-one correspondence with the deflection coil; each coil fixing unit includes two fixing posts for fixing the two ends of the corresponding deflection coil, and each fixing post extends outward from the outer peripheral wall of the support cylinder; Each of the coil fixing units is disposed on one side of the corresponding coil winding block along the axial direction of the through channel.

8. The electron beam deflection and acceleration device according to claim 1, characterized in that, Each of the deflection components comprises multiple deflection coils, which are evenly arranged along the circumferential direction of the through channel. The outer peripheral wall of the support cylinder includes multiple sides facing different directions, and the multiple sides are evenly arranged along the circumferential direction of the through channel; the multiple deflection coils and the multiple sides in each deflection assembly are arranged in a one-to-one correspondence.

9. The electron beam deflection and acceleration device according to claim 2, characterized in that, The inner peripheral wall of the speed-increasing cylinder is coaxially arranged with the outer peripheral wall of the speed-increasing section; The insulating material is alumina ceramic or aluminum nitride ceramic.

10. A semiconductor device inspection apparatus characterized by comprising: include: A support device configured to support the semiconductor device under test; A transmitting device configured to emit an electron beam toward the semiconductor device under test; The electron beam deflection acceleration device as claimed in any one of claims 1 to 9, disposed between the emission device and the support device, so that the electron beam reaches the measured semiconductor device via the electron beam passage; a detector disposed at an end of the through passage facing away from the support device for receiving the signal particles reflected by the measured semiconductor device.

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