Composite laser crystal growth device

Abstract

The utility model relates to a composite laser crystal growing device which structurally comprises a barrel body, a lifting support column, a tray, a heat preservation brick, a crystal, a heat preservation barrel, a heating body, a crucible, raw materials and a heat preservation felt, the heat preservation brick is arranged at the bottom of the heat preservation barrel, the barrel type crucible penetrates through the center of the heat preservation brick, the bottom of the crucible is supported on the tray, and the tray is connected with the lifting support column. The bottom of the insulating brick is connected with a barrel body, the barrel body covers the bottom of the crucible and the outer sides of the lifting support column and the tray, a crystal matched with the inner diameter of the crucible is placed at the inner bottom of the crucible, raw materials are placed in the crucible above the crystal, a heating body covers the outer side of the crucible in the insulating barrel, the bottom of the heating body is supported on the insulating brick, and a gap is reserved between the heating body and the crucible; the top of the insulation barrel is provided with insulation felt. The device disclosed by the utility model has the advantages of reasonable structural design, simplicity in operation, low cost, omission of multiple crystal surface treatment procedures, capability of producing composite laser crystals with larger sizes and higher production quality, and can be used for growing composite crystals by using a Bridgman-Stockbarger method.

Description

Technical Field

[0001] This utility model relates to a composite laser crystal growth device, belonging to the field of crystal material preparation technology. Background Technology

[0002] To improve the thermal effect of lasers and obtain high-power, high-quality laser output, composite crystals or bonded crystals are generally used as gain media. This involves combining or bonding undoped crystals with doped crystals, using the high thermal conductivity of the undoped crystals to remove waste heat from the doped crystals. This is mainly achieved through two methods: (1) preparing bonded crystals using bonding technology; and (2) directly growing composite crystals. However, these methods suffer from problems such as excessive loss on the composite bonding surface of the prepared composite crystals, low bonding strength, difficulty in withstanding high power densities, high requirements for crystal growth processes, complex seeding of bulk crystal bottom surfaces, difficulty in control, and the tendency to produce defects such as polycrystalline and scattering.

[0003] The crucible descent method is commonly used for single crystal growth, typically for large-sized single crystals. The material for single crystal growth is placed in a crucible and slowly lowered through a furnace with a specific temperature gradient, the furnace temperature controlled slightly above the material's melting point. Depending on the material's properties, a resistance furnace or a high-frequency furnace can be selected for the heating element. As the crucible passes through the heating zone, the material melts. As the crucible continues to descend, the temperature at the bottom first drops below the melting point, and crystallization begins. The single crystal continues to grow as the crucible descends.

[0004] In existing technologies, the position of the seed crystal in the crucible is generally small, and it can only serve as a seed crystal. It cannot be directly used for the growth of composite laser crystals, resulting in problems such as small size and high stress in the grown composite laser crystals. Utility Model Content

[0005] This invention proposes a composite laser crystal growth device, which aims to overcome the above-mentioned shortcomings of the existing technology and meet the requirements for composite laser crystal preparation.

[0006] The technical solution of this utility model is a composite laser crystal growth device, the structure of which includes a barrel, a lifting support, a tray, insulating bricks, a crystal, an insulating barrel, a heating element, a crucible, raw materials, and insulating felt. The bottom of the insulating barrel is covered with insulating bricks, and a cylindrical crucible passes through the center of the insulating bricks. The bottom of the crucible is supported on the tray, which is connected to the lifting support. The bottom of the insulating bricks is connected to the barrel, and the barrel covers the bottom of the crucible and the outside of the lifting support and the tray. A crystal, matching the inner diameter of the crucible, is placed at the bottom of the crucible. Raw materials are placed in the crucible above the crystal. A heating element is placed on the outside of the crucible inside the insulating barrel, and its bottom is supported on the insulating bricks. A gap is left between the heating element and the crucible. Insulating felt is placed on the top of the insulating barrel. The crucible is designed in a cylindrical shape to hold large-sized crystals, which can simultaneously act as seed crystals to achieve the one-time growth of composite crystals.

[0007] Preferably, the barrel body is an alumina barrel body, the insulating bricks are zirconia insulating bricks, and the insulating barrel is a zirconia insulating barrel.

[0008] Preferably, the lifting support is a tungsten lifting support, the tray is a tungsten tray, and the crucible is a tungsten crucible.

[0009] Preferably, the insulating felt is a graphite insulating felt.

[0010] Preferably, the crucible has an outer diameter of 80-120 mm, a thickness of 2-4 mm, a height of 200-300 mm, and a crystal thickness of 20-50 mm.

[0011] The advantages of this invention are: reasonable structural design; the use of this device to grow composite crystals by crucible descent method; simple operation and low cost; elimination of multiple crystal surface treatment processes; ability to produce larger-sized composite laser crystals; and high production quality. Attached Figure Description

[0012] Figure 1 This is a schematic diagram of the structure of the composite laser crystal growth device of this utility model.

[0013] In the diagram, 1 is the barrel, 2 is the lifting support, 3 is the tray, 4 is the insulation brick, 5 is the crystal, 6 is the insulation barrel, 7 is the heating element, 8 is the crucible, 9 is the raw material, and 10 is the insulation felt. Detailed Implementation

[0014] The present invention will be further described in detail below with reference to embodiments and specific implementation methods.

[0015] like Figure 1As shown, a composite laser crystal growth device includes a barrel 1, a lifting support column 2, a tray 3, a heat-insulating brick 4, a crystal 5, a heat-insulating barrel 6, a heating element 7, a crucible 8, raw materials 9, and a heat-insulating felt 10. The bottom of the heat-insulating barrel 6 is provided with the heat-insulating brick 4. The cylindrical crucible 8 passes through the center of the heat-insulating brick 4, and the bottom of the crucible 8 is supported on the tray 3. The tray 3 is connected to the lifting support column 2. The bottom of the heat-insulating brick 4 is connected to the barrel 1. The barrel 1 covers the bottom of the crucible 8 and the outside of the lifting support column 2 and the tray 3. The crystal 5, which matches the inner diameter of the crucible 8, is placed at the bottom of the crucible 8. The raw materials 9 are placed in the crucible 8 above the crystal 5. The outside of the crucible 8 is covered by the heating element 7 inside the heat-insulating barrel 6. The bottom of the heating element 7 is supported on the heat-insulating brick 4. A gap is left between the heating element 7 and the crucible 8. The top of the heat-insulating barrel 6 is provided with a heat-insulating felt 10.

[0016] Based on the above structure, the lifting support 2 and the tray 3 are used to support the lifting of the crucible 8.

[0017] The crucible is designed in a cylindrical shape to hold large crystals 5. Crystal 5 can serve as both a seed crystal and a material for the one-time growth of composite crystals.

[0018] The insulating brick 4 is used to support the heating element 7 so that it does not move with the crucible 8, and it leaves a gap with the wall of the crucible 8 so as not to affect the descent of the crucible 8, and to form a stable thermal field in the crystal growth area.

[0019] During production, the pre-processed crystals 5 and the uniformly mixed raw materials 9 are placed into the crucible 8. The tray 3 and the crucible 8 are positioned on the support column 2 in sequence. Then, the barrel 1, the heat-insulating brick 4, the heat-insulating barrel 6, and the heating element 7 are assembled in the same center. Finally, the heat-insulating felt 10 is placed on top. Example

[0020] The barrel 1 is an alumina barrel, the lifting support 2 is a tungsten lifting support, the tray 3 is a tungsten tray, the insulation brick 4 is a zirconia insulation brick, the crystal 5 is a sapphire crystal, the insulation barrel 6 is a zirconia insulation barrel, the crucible 8 is a tungsten crucible, the raw materials 9 are TiO2 and Al2O3, and the insulation felt 10 is a graphite insulation felt.

[0021] The crucible has an outer diameter of 80-120 mm, a thickness of 2-4 mm, and a height of 200-300 mm.

[0022] The thickness of crystal 5 is 20-50mm, and its diameter is determined according to the inner diameter of crucible 8.

[0023] The growth process includes the following steps:

[0024] Step 1) Calculate and accurately weigh the TiO2 and Al2O3 raw materials according to the stoichiometric ratio of titanium gemstone (Ti:Al2O3) crystals and mix them evenly;

[0025] Step 2) The mixed raw materials are isostatically pressed into shape and sintered in a muffle furnace;

[0026] Step 3) First, place sapphire as a seed crystal in crucible 8, then put the sintered titanium sapphire raw material from step 2) into crucible 8, cover the crucible, close the furnace door and evacuate, and fill with protective gas to standard atmospheric pressure; turn on the heating power to raise the temperature to the melting point of the raw material; after maintaining the temperature for a period of time, allow the raw material to completely melt; slowly lower crucible 8 to carry out crystal growth, and after the growth is completed, slowly lower it to room temperature, and open the furnace to obtain a composite laser crystal of sapphire and titanium sapphire.

[0027] All of the components described above are existing technologies, and those skilled in the art can use any model and existing design that can achieve their corresponding functions.

[0028] The above description is only a preferred embodiment of the present utility model. It should be noted that for those skilled in the art, several modifications and improvements can be made without departing from the inventive concept of the present utility model, and these all fall within the protection scope of the present utility model.

Claims

1. A composite laser crystal growth apparatus, characterized in that, The application relates to a crystal growth device, which comprises a barrel body (1), lifting columns (2), a tray (3), heat preservation bricks (4), a crystal (5), a heat preservation barrel (6), a heating body (7), a crucible (8), raw materials (9) and heat preservation felt (10), wherein the heat preservation barrel (6) is provided with the heat preservation bricks (4) at the bottom, the circular barrel type crucible (8) penetrates through the center of the heat preservation bricks (4), the bottom of the crucible (8) is supported on the tray (3), the tray (3) is connected with the lifting columns (2), the bottom of the heat preservation bricks (4) is connected with the barrel body (1), the barrel body (1) is arranged on the outside of the bottom of the crucible (8) and the lifting columns (2) and the tray (3), the crystal (5) matched with the inner diameter of the crucible (8) is arranged on the inner bottom of the crucible (8), the raw materials (9) are arranged in the crucible (8) above the crystal (5), the heating body (7) is arranged on the outside of the crucible (8) in the heat preservation barrel (6), the bottom of the heating body (7) is supported on the heat preservation bricks (4), a gap is reserved between the heating body (7) and the crucible (8), and the heat preservation felt (10) is arranged on the top of the heat preservation barrel (6).

2. A composite laser crystal growth apparatus as claimed in claim 1, wherein, The barrel body (1) is an alumina barrel body, the heat preservation bricks (4) are zirconia heat preservation bricks, and the heat preservation barrel (6) is a zirconia heat preservation barrel.

3. A composite laser crystal growth apparatus as claimed in claim 1, wherein The lifting columns (2) are tungsten lifting columns, the tray (3) is a tungsten tray, and the crucible (8) is a tungsten crucible.

4. A composite laser crystal growth apparatus as claimed in claim 1, wherein The heat preservation felt (10) is graphite heat preservation felt.

5. A composite laser crystal growth apparatus as claimed in any one of claims 1 to 4, wherein The outer diameter of the crucible (8) is 80-120 mm, the thickness is 2-4 mm, and the height is 200-300 mm; and the thickness of the crystal (5) is 20-50 mm.

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