Phase-change integrated heat dissipation module for realizing asynchronous temperature equalization of GaN-based chip, GaAs-based chip and Si-based chip in TR assembly
By designing an integrated phase change heat dissipation module, and utilizing a combination of high thermal conductivity core material and phase change material, the problem of uneven chip temperature in TR components was solved, achieving rapid and uniform heat dissipation and reduced power consumption, thus extending the chip's lifespan.
Patent Information
- Application Number
- CN202422940629.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-30
- Publication Date
- 2025-12-30
- Estimated Expiration
- 2034-11-30
AI Technical Summary
In existing technologies, the temperature control methods for GaN, GaAs, and Si-based chips in TR components suffer from problems such as excessively high overall temperature or uneven local temperature, leading to decreased chip performance and shortened lifespan.
Design a phase change integrated heat dissipation module, including a phase change end cap, a high thermal conductivity core material, a high thermal conductivity clamp, and a side cover. By setting a high thermal conductivity core material with a high thermal conductivity clamp inside the phase change cavity, heat can be uniformly conducted in the thickness direction, and a phase change material is placed directly below the Si-based chip for rapid cooling.
It achieves asynchronous temperature equalization for GaN, GaAs, and Si-based chips, reducing chip power consumption, extending lifespan, and meeting the needs of miniaturized and lightweight weapons.
Smart Images
Figure CN223743658U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model belongs to the field of heat management, concretely relates to a phase change integrated heat dissipation module for realizing synchronous temperature equalization of GaN, GaAs and Si base chips in TR assembly. BACKGROUND
[0002] The high-power chip heat dissipation of phased array antenna is pasted with TR assembly of different channel numbers through the hot end of the temperature equalizing plate, and the cold end of the temperature equalizing plate is inserted into the groove of the phase change cold plate, and the heat is transferred to the phase change material in the phase change cold plate to be phase change heat absorption. When the chip works in a long time and high power state, over-temperature will inevitably occur, which will directly affect the performance and service life of the chip.
[0003] At present, the chip temperature control in China is one of the integrated temperature equalization, but the overall temperature of the assembly is relatively high, basically within 125 DEG C, while the tolerance temperature of GaN chip is 230 DEG C, the tolerance temperature of GaAs chip is 165 DEG C, but the tolerance temperature of Si base chip is 105 DEG C, the overall temperature is higher than the tolerance temperature of Si chip, and the reliability and service life will be reduced by half every 10 DEG C, this way will damage the Si base chip, and other chips cannot work efficiently. Another way is to overlap a part of TR assembly on the heat dissipation module, only the end where GaN chip and GaAs chip in TR assembly is overlapped on the heat dissipation module, and the end where Si chip is not in contact with the heat dissipation module, which will lead to that the heat dissipation module cannot quickly and uniformly temperature, and the temperature control effect of the non-contact part is poor, there is no phase change material under the Si base chip, which cannot completely refrigerate, and the temperature will accumulate, resulting in over-temperature and damaging the chip. Therefore, the effective heat control of high-power chip on TR assembly has become a bottleneck problem restricting its development.
[0004] In order to solve the above problems, protect the chip from interference, and reduce the power consumption of the chip. The utility model provides a kind of phase change integrated heat dissipation module for realizing synchronous temperature equalization of GaN, GaAs and Si base chips in TR assembly, can make heat conduct in thickness direction and spread quickly and uniformly to both sides, realize the rapid and uniform heat of TR assembly, reduce the power consumption of chip well, and prolong service life. SUMMARY
[0005] The utility model discloses a kind of phase change integrated heat dissipation modules for realizing synchronous temperature equalization of GaN, GaAs and Si base chips in TR assembly. The heat dissipation module, by setting through cold and hot end and being equipped with high-thermal-conductivity hoop high-thermal-conductivity core material in phase change cavity, can make heat quickly and uniformly to both sides from center and can be on and under face synchronous temperature equalization, realize the rapid and uniform heat, reduce the power consumption of chip well, and prolong service life.
[0006] To solve the above problems, the technical solution of this utility model is:
[0007] This solution indicates a phase change integrated heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips. The heat dissipation module consists of a phase change end cap, a high thermal conductivity core material, a high thermal conductivity clamp, a side cover, and a phase change cavity. A high thermal conductivity clamp is set in the middle of the high thermal conductivity core material. The phase change cavity runs through the hot and cold ends of the module. A high thermal conductivity core material runs through the center of the phase change cavity. The phase change cavity is filled with a phase change material with high volume enthalpy change to act as a heat sink.
[0008] Preferably, the phase change end cap is divided into a first phase change end cap and a second phase change end cap. The phase change end cap is provided with a circular boss, which is fastened to the base body through a connecting hole and then welded and sealed.
[0009] Preferably, the high thermal conductivity clamp is disposed in the middle of the high thermal conductivity core material, and the high thermal conductivity clamp is uniformly provided with through circular holes for fastening with the base and the side cover.
[0010] Preferably, the phase change cavity end face of the cold end of the heat dissipation module is provided with a circular through hole.
[0011] Preferably, the heat dissipation module is integrally connected with the TR component, and the phase change material is located directly below the Si-based chip in the TR component. Beneficial effects
[0012] 1) This utility model discloses a phase change integrated heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR component. The TR component is attached to the heat dissipation module. By setting a high thermal conductivity core material with high thermal conductivity clamps inside the phase change cavity, the overall temperature can be uniformly distributed, and heat can be conducted in the thickness direction, so that the top and bottom can be uniformly heated simultaneously. This significantly reduces the power consumption of GaN and GaAs chips. Furthermore, the phase change material is located directly below the Si-based chip, which can effectively absorb the heat of the Si-based chip while uniformizing the temperature, reducing the temperature of the Si-based chip, cooling it rapidly, and protecting the Si-based chip. This achieves asynchronous temperature uniformity for GaN, GaAs, and Si chips.
[0013] 2) The integrated structure with high thermal conductivity through phase change allows the integrated module to have a smaller size and weight, which is suitable for the needs of miniaturized and lightweight weapons.
[0014] 3) The high thermal conductivity core material is in direct contact with the phase change material, which allows heat to be transferred quickly from the hot end to the cold end, thus improving the reaction rate of the phase change material. Attached Figure Description
[0015] Figure 1This is a schematic diagram of the structure of a phase change integrated heat dissipation module that enables asynchronous temperature uniformity of GaN, GaAs and Si-based chips in a TR component according to this utility model.
[0016] The attached diagrams are detailed as follows: 1-First phase change cover; 2-Second phase change cover; 3-High thermal conductivity core material; 4-High thermal conductivity clamp; 5-Bottom base blank; 6-Side cover;
[0017] Figure 2 This is a schematic diagram of the high thermal conductivity core material and phase change material filling in the integrated heat dissipation module of this utility model;
[0018] The attached diagrams are detailed below: 7-Phase change material; 8-Phase change cavity;
[0019] Figure 3 This is a schematic diagram of a phase-change integrated heat dissipation module for phased array antenna heat dissipation and asynchronous temperature uniformity of GaN, GaAs and Si-based chips according to the present invention.
[0020] The attached diagram details are as follows: 9 - Circular through hole. Detailed Implementation
[0021] Referring to the accompanying drawings, the following detailed description is provided of an integrated phase-change heat dissipation module for achieving asynchronous temperature uniformity of GaN, GaAs, and Si-based chips in a TR component:
[0022] (1) Using 6063 aluminum alloy, the bottom base blank 5 is machined by CNC. Its outer dimensions are 110mm×30mm×80mm and the outer dimensions of the side cover 6 are 80mm×20mm×60mm. The internal phase change cavity dimensions are machined to the required level, and the outer layer is reserved for machining. At the same time, the phase change end cover is machined. The dimensions of the first phase change end cover are 90mm×15mm×10mm and the dimensions of the second phase change end cover are 80mm×10mm×10mm.
[0023] (2) Graphene thermal conductive sheet is fabricated according to the cavity size, and the graphene thermal conductive sheet is modified in the thickness direction and the thermal interface is treated. The thickness of the graphene thermal conductive sheet is 1 mm.
[0024] (3) Use aluminum alloy material to press and form graphene thermal conductive sheet, and then process it. Process a high thermal conductivity clamp in the middle of the graphene thermal conductive sheet, lay the graphene thermal conductive sheet with the high thermal conductivity clamp flat to the phase change cavity that runs through the hot and cold ends, and fix it in the phase change cavity by the high thermal conductivity clamp.
[0025] (4) Weigh and mix the paraffin material according to the ratio, heat it to (110±2)℃, and stir it magnetically for 30 minutes to make it evenly mixed, thereby modifying the paraffin material to have high thermal conductivity.
[0026] (5) In the cold end opening, the paraffin material in the molten state is filled into the phase change cavity from the cold end opening, and the enthalpy change volume is reserved in the cavity. After the paraffin material is filled, the opening is sealed by laser welding;
[0027] (6) A circular through hole with a diameter of 2.5 mm is processed on the end face of the cold end phase change cavity, and finally CNC finishing is performed to remove the processing allowance.
Claims
1. A phase change integrated heat dissipation module for realizing different temperature uniformity of GaN, GaAs and Si-based chips in a TR assembly, the heat dissipation module comprising a phase change end cover, a high-thermal-conductivity core material, a side cover and a phase change cavity, characterized in that, The high-thermal-conductivity core material is provided with a high-thermal-conductivity clamp in the middle, is arranged in the center of the phase-change cavity and penetrates the cold and hot ends, and the phase-change cavity is filled with a phase-change material.
2. The heat dissipation module of claim 1, wherein, The phase-change end cover is divided into a first phase-change end cover and a second phase-change end cover, a circular boss is arranged on the phase-change end cover, the phase-change end cover is buckled to the base body through the connecting hole on the base body, and welding packaging is performed.
3. The heat dissipation module of claim 1, wherein, Uniform circular through holes are arranged on the high-thermal-conductivity clamp to be buckled to the base body and the side cover.
4. The heat dissipation module of claim 1, wherein, A circular through hole is arranged on the end face of the phase-change cavity of the cold end of the heat dissipation module.
5. The heat dissipation module of claim 1, wherein, The heat dissipation module is integrally overlapped with the TR assembly, and the Si-based chip in the TR assembly is directly below the phase-change material.