Anti-static metal oxide semiconductor field effect transistor (MOSFET) device

Abstract

The utility model discloses an anti-static MOSFET device, which belongs to the technical field of MOSFET devices, and comprises a storage box, a crystal chip is arranged between the inner walls of the storage box, one end of the crystal chip is electrically connected with a source electrode pin, a grid electrode pin and a drain electrode pin respectively, and the outer ends of the source electrode pin, the grid electrode pin and the drain electrode pin are sleeved with a protection assembly. The power supply end is embedded in the upper end of the crystal chip, the protection resistor is connected in series between the power supply end and the grid electrode pin, and the protection resistor is connected in series between the grid electrode pin and the source electrode pin of the MOSFET tube, so that the electrostatic interference is reduced, the use cost is low, the energy consumption is less, and the cost is low. According to the utility model, the protection resistor is connected in series between the grid electrode pin and the source electrode pin of the MOSFET tube, so that the electrostatic interference is reduced, the use cost is low, the energy consumption is less, and meanwhile, under the protection assembly, the three pins of the MOSFET tube can be protected and supported, and the bending phenomenon is avoided.

Description

Technical Field

[0001] This utility model relates to the field of MOSFET device technology, and more specifically, to an anti-static MOSFET device. Background Technology

[0002] Power MOSFET devices are prone to electrostatic discharge (ESD) during packaging, transportation, assembly, and use. ESD can break down the gate-source insulating dielectric, leading to device failure. To achieve higher yield and device reliability, more and more MOSFETs require ESD protection designs. The common design method in current processes is to connect a polysilicon diode array in parallel between the gate and source. When ESD occurs, the diode array can break down before the gate oxide layer, instantly discharging voltage and current, thereby protecting the MOSFET from damage.

[0003] However, the current method of connecting polysilicon diodes in parallel between the gate and source increases energy consumption and cost significantly. Furthermore, the pins of MOSFET devices are susceptible to external factors during use, which can lead to bending or even breakage. In addition, existing MOSFET devices do not provide protection for the pins. The pins taper from the package connection to the tip, making them more prone to damage at the transition point. Therefore, protection is required. To address this, this solution proposes an anti-static MOSFET device. Utility Model Content

[0004] 1. Technical problem to be solved:

[0005] To address the problems existing in the prior art, the purpose of this utility model is to provide an anti-static MOSFET device. By connecting a protective resistor in series between the gate pin and the source pin of the MOSFET, electrostatic interference is reduced. It has low operating cost and consumes less power. At the same time, the protective component can protect and support the three pins of the MOSFET to prevent bending.

[0006] 2. Technical Solution:

[0007] To solve the above problems, the present invention adopts the following technical solution.

[0008] An anti-static MOSFET device includes a storage box, in which a crystal chip is installed between the inner walls of the storage box. One end of the crystal chip is electrically connected to a source pin, a gate pin, and a drain pin, respectively. The outer ends of the source pin, the gate pin, and the drain pin are fitted with protective components. A top plate is snapped onto the upper end of the storage box, and a bottom plate is installed on the bottom of the storage box.

[0009] A further improvement is that a power supply terminal is embedded at the upper end of the crystal chip, and a protective resistor is connected in series between the power supply terminal and the gate pin.

[0010] A further improvement is that the protective component includes telescopic sleeves fitted to the source pin, gate pin, and drain pin respectively, a connecting rod is fixedly connected between the inner walls of each pair of telescopic sleeves, and a sealing sleeve is snapped into one side of each telescopic sleeve.

[0011] A further improvement is that: positioning blocks 2 are fixedly connected to the four inner walls of the storage box, and corresponding positioning blocks 1 are fixedly connected to the bottom side wall of the top plate.

[0012] A further improvement is that a placement rack is fixedly connected to the bottom end of the top plate.

[0013] 3. Beneficial effects:

[0014] Compared with the prior art, the technical solution provided by this utility model has the following advantages:

[0015] This invention reduces electrostatic interference by connecting a protective resistor in series between the gate and source pins of a MOSFET, resulting in lower operating costs and less energy consumption.

[0016] This invention, through the setting of protective components, allows the three sets of protective components to be housed in a concealed manner outside the source pin, gate pin, and drain pin during use, thereby limiting and protecting them. In the initial unused state, the protective components can be fully fitted outside the source pin, gate pin, and drain pin after extension and retraction, thus achieving protection during transportation.

[0017] It should be noted that the structures not described in this utility model are the same as or can be implemented using existing technology, and will not be elaborated here, as they do not involve the design points and improvement directions of this utility model. Attached Figure Description

[0018] Figure 1 This is an exploded structural diagram of the entire utility model;

[0019] Figure 2 This is a schematic diagram of the structure of the protective resistor of this utility model;

[0020] Figure 3 This is a schematic diagram of the structure of the protective component of this utility model.

[0021] Explanation of the labels in the diagram:

[0022] 1. Storage box; 11. Positioning block two;

[0023] 2. Crystal chip; 21. Power supply terminal; 22. Protective resistor;

[0024] 3. Source pin; 4. Gate pin; 5. Drain pin;

[0025] 6. Protective components; 61. Telescopic sleeve; 62. Connecting rod; 63. Sealing sleeve;

[0026] 7. Top plate; 71. Positioning block one; 72. Placement rack;

[0027] 8. Base plate. Detailed Implementation

[0028] To facilitate understanding of this utility model, a more comprehensive description of the utility model will be given below with reference to the accompanying drawings, which show several embodiments of the utility model. However, the utility model can be implemented in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the utility model will be more thorough and complete.

[0029] In the description of this utility model, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "page", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc., indicating the orientation or positional relationship are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0030] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0031] In this utility model, unless otherwise explicitly specified and limited, the terms "installed," "connected," "linked," "fixed," "provided with," and "located in" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances. Example

[0032] Please see Figures 1-3 An anti-static MOSFET device includes a storage box 1, a crystal chip 2 installed between the inner walls of the storage box 1, a source pin 3, a gate pin 4, and a drain pin 5 electrically connected to one end of the crystal chip 2, a protective component 6 sleeved on the outer ends of the source pin 3, the gate pin 4, and the drain pin 5, a top plate 7 snapped onto the upper end of the storage box 1, and a bottom plate 8 installed at the bottom of the storage box 1.

[0033] More specifically: a power supply terminal 21 is embedded at the upper end of the crystal chip 2, and a protection resistor 22 is connected in series between the power supply terminal 21 and the gate pin 4.

[0034] In order to avoid electrostatic interference caused by the floating gate voltage of the existing MOSFET, which may affect the stability of the circuit and the lifespan of the components, this solution reduces electrostatic interference by connecting a protective resistor 22 in series between the gate pin 4 and the source pin 3 of the MOSFET. This solution has lower cost and consumes less energy.

[0035] Furthermore, to prevent the pins of the MOSFET device from being easily bent or even broken due to external factors during use, in this embodiment, the protective components 6 are arranged in a concealed manner outside the source pin 3, gate pin 4, and drain pin 5 during use, providing limitation and protection. In the initial unused state, the protective components 6 can be fully fitted outside the source pin 3, gate pin 4, and drain pin 5 after extension and retraction, thus achieving protection during transportation.

[0036] Please see Figure 1 and Figure 3 The protective component 6 includes telescopic sleeves 61 respectively fitted on the source pin 3, gate pin 4, and drain pin 5. A connecting rod 62 is fixedly connected between the inner walls of each pair of telescopic sleeves 61, and a sealing sleeve 63 is snapped onto one side of each telescopic sleeve 61.

[0037] During use, the three sets of telescopic sleeves 61 are synchronously connected by connecting rods 62 to ensure that they are always on the same horizontal plane when sleeved onto the source pin 3, gate pin 4, and drain pin 5. In use, multiple telescopic sleeves 61 can be stored synchronously and slid freely on their surface to a suitable position. This can limit the source pin 3, gate pin 4, and drain pin 5 to the same position, prevent bending, and provide support and protection to prevent movement.

[0038] During initial transportation, all of its multiple telescopic sleeves 61 can be unfolded to completely cover the surfaces of the source pin 3, gate pin 4, and drain pin 5, and the sealing sleeve 63 is inserted to the side, thereby protecting the source pin 3, gate pin 4, and drain pin 5 and preventing bumps and bending during transportation.

[0039] Please see Figures 1-3 Positioning blocks 11 are fixedly connected to the four inner walls of the storage box 1, and corresponding positioning blocks 71 are fixedly connected to the bottom side wall of the top plate 7.

[0040] During use, the top plate 7 can be snapped onto the top of the storage box 1 by the operation of positioning block 2 11 and positioning block 1 71, making it more convenient for personnel to maintain and disassemble later.

[0041] Please see Figure 1 and Figure 3 The bottom end of the top plate 7 is fixedly connected to a placement rack 72.

[0042] During the use of this solution, after installation, the personnel should remove the sealing sleeve 63 from the side of the telescopic sleeve 61 and place it on top of the placement rack 72 to avoid the sealing sleeve 63 being lost due to excessive time when protection of the source pin 3, gate pin 4, and drain pin 5 is required later.

[0043] The above-described embodiments are merely illustrative of certain implementations of this utility model, and their descriptions are relatively specific and detailed. However, they should not be construed as limiting the scope of this utility model patent. It should be noted that those skilled in the art can make various modifications and improvements without departing from the concept of this utility model, and these modifications and improvements all fall within the protection scope of this utility model. Therefore, the protection scope of this utility model patent should be determined by the appended claims.

Claims

1. An anti-static MOSFET device comprising a storage box (1), characterized in that: The inner wall of the storage box (1) is provided with a crystal chip (2), one end of the crystal chip (2) is respectively electrically connected with a source electrode pin (3), a gate electrode pin (4) and a drain electrode pin (5), the outer end of the source electrode pin (3), the gate electrode pin (4) and the drain electrode pin (5) is provided with a protection assembly (6), the upper end of the storage box (1) is provided with a top plate (7), and the bottom of the storage box (1) is provided with a bottom plate (8). The upper end of the crystal chip (2) is embedded with a power supply end (21), and the power supply end (21) and the gate electrode pin (4) are connected in series with a protection resistor (22).

2. The antistatic MOSFET device of claim 1, wherein: The protection assembly (6) comprises a source electrode pin (3), a gate electrode pin (4) and a drain electrode pin (5) respectively sleeved with an expansion sleeve (61), and the inner walls of two expansion sleeves (61) are fixedly connected with a connecting rod (62), and one side of the expansion sleeve (61) is provided with a sealing sleeve (63).

3. The anti-static MOSFET device of claim 1, wherein: The four inner walls of the storage box (1) are fixedly connected with locating blocks two (11), and the bottom side wall of the top plate (7) is fixedly connected with corresponding locating blocks one (71).

4. The antistatic MOSFET device of claim 1, wherein: The bottom end of the top plate (7) is fixedly connected with a placing rack (72).

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