Miniaturized semiconductor optical amplifier with low power consumption and high gain
By employing a two-stage amplification structure and integrated design, the problem of gain saturation in semiconductor optical amplifiers under high carrier concentration has been solved, achieving low power consumption, high gain, and stable output, making it suitable for the field of optical communication.
Patent Information
- Application Number
- CN202520108887.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-17
- Publication Date
- 2025-12-30
- Estimated Expiration
- 2035-01-17
AI Technical Summary
Existing semiconductor optical amplifiers are prone to gain saturation under high carrier concentration, making it difficult to achieve high gain. Furthermore, high current leads to high power consumption and heat dissipation problems, and the output power is unstable, especially under small signal input conditions.
A two-stage amplification structure is adopted, integrating two semiconductor amplification chips on a thermoelectric cooler substrate. Free-space isolators and filters are used to extend the signal light operating range. Combined with temperature detection and thermoelectric cooler control, low power consumption and high gain are achieved.
It achieves a high gain of 58dB and a low power consumption of 0.46W, and is suitable for stable output optical power under small signal input conditions, solving the challenges of gain saturation and heat dissipation of single-stage amplifier devices.
Smart Images
Figure CN223744140U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to the field of optical fiber communication technology especially small -size low -power consumption and high gain semiconductor optical amplifier. BACKGROUND
[0002] At present, the optical amplifier used in the field of optical fiber communication is mainly erbium-doped fiber amplifier (EDFA) and semiconductor amplifier, with the development of semiconductor material, from bulk material, quantum well to quantum dot, combined with energy band engineering, semiconductor optical amplifier develops rapidly.
[0003] The semiconductor amplifier is based on the theoretical basis of semiconductor laser, after power on, the PN junction produces carrier (electron-hole pair), when the external photon passes through the gain medium (PN junction), the carrier transmits energy to the photon, generates a photon with the same amplitude, frequency and phase as the input light, and the carrier jumps from the excited state to the ground state. Since the semiconductor amplifier is directly an electrical signal loaded on the gain medium, compared with EDFA, it has the advantages of high bandwidth, high speed, low energy consumption and small size.
[0004] With the increase of electron injection and carrier concentration in the semiconductor active layer, the gain of the semiconductor also increases, and under a certain current, the semiconductor amplifier has constant gain G, and the output power increases linearly with the power size of the input signal. The gain of input and output in linear relationship is small signal gain.
[0005] High injection carrier concentration or high input light intensity in the semiconductor will cause the gain saturation of the semiconductor amplifier, that is, the output power decreases with the increase of the injection carrier concentration, or even if the current is not saturated, when the input power reaches a certain value, the output power does not increase, but decreases.
[0006] The interband recombination lifetime of semiconductor amplifier is only nanoseconds, compared with the millisecond metastable state lifetime of EDFA, it is more difficult to obtain high population inversion and high linear gain. In order to achieve high gain coefficient, although the gain coefficient can be increased by increasing the injection current density, it will be affected by the Auger non-radiative recombination. In Auger effect, when an electron and a hole recombine, the excess energy is transferred to a second electron instead of emitting light, and then the second electron relaxes back to its original energy level by emitting phonons. Auger recombination is the main factor of efficiency decline at high current. This non-radiative recombination process involves the interaction of three carriers, at least one electron and one hole. The gain can be increased by increasing the cavity length, but the rear end of the long chip will be lost due to saturation. At the same time, high gain of single chip is easy to produce self-oscillation, resonance caused by residual reflection of end face, that is, large ripple, causing output power fluctuation.
[0007] In order to improve the gain of a single device, especially in the case of very small input light (-45dBm), the output reaches 10dBm, and the gain reaches more than 55dB, at present, only the way of lengthening the gain medium and increasing the current is adopted, not only in the latter half of the long gain due to the high carrier concentration, not only the gain cannot continue to improve, but also the gain saturation, the gain decreases.
[0008] The utility model discloses a scheme in view of the above situation, utilize the advantage of small -size of semiconductor, free space package, two or more chips are integrated to the device inside, improve the total gain of device through segmented amplification gain, can obviously reduce the overall power consumption of device, improve the heat dissipation condition of device due to the low current of adoption. Utility model content
[0009] The utility model discloses a small -size low -power consumption and high gain semiconductor optical amplifier, utilize the advantage of small -size of semiconductor, free space package, two or more chips are integrated to the device inside, improve the total gain of device through segmented amplification gain, can obviously reduce the overall power consumption of device, improve the heat dissipation condition of device due to the low current of adoption.
[0010] The utility model adopts the following technical scheme.
[0011] Small -size low -power consumption and high gain semiconductor optical amplifier, the optical amplifier includes the first stage amplification module, second stage amplification module along the light path direction is established, first stage amplification module includes along the light path order and is established transmission optical fiber (1), input isolator (3), first stage amplification chip (5), intermediate isolator (8), second stage amplification module includes along the light path order and is established filter (9), second stage amplification chip (11), output isolator (14), output optical fiber (16), the optical signal of first stage amplification module through intermediate isolator output is received by the filter of the light path of second stage amplification module.
[0012] In the first stage amplification module, the transmission optical fiber, input isolator between being equipped with first hemisphere lens (2) for signal light spot collimation, and the input isolator, first stage amplification chip between being equipped with second hemisphere lens (4) for light spot collimation, after the collimation processing of signal light is transmitted into first stage amplification chip through input isolator and carries out first optical signal amplification, and exports to intermediate isolator,
[0013] First stage amplification chip, intermediate isolator between being equipped with third hemisphere lens (7) for collimating the output optical signal of first stage amplification chip.
[0014] In the second-stage amplification module, the filter is used to filter the optical signal input by the first-stage amplification module, the filtered optical signal is transmitted to the second-stage amplification chip for second optical signal amplification, and then is transmitted to the output optical fiber through the output isolator.
[0015] The fourth hemispherical lens (10) for collimating the filtered optical signal is arranged between the filter and the second-stage amplification chip, the fifth hemispherical lens (13) for collimating the output optical signal of the second-stage amplification chip is arranged between the second-stage amplification chip and the output isolator, and the sixth hemispherical lens (15) for collimating the output optical signal of the output isolator is arranged between the output isolator and the output optical fiber.
[0016] The first chip NTC (6) with temperature detection function is integrated at the COC of the first-stage amplification chip, and the second chip NTC (12) with temperature detection function is integrated at the COC of the second-stage amplification chip.
[0017] The optical elements of the first-stage amplification module are arranged on the first TEC substrate (17) of the thermoelectric cooler, and the optical elements of the second-stage amplification module are arranged on the second TEC substrate (18) of the thermoelectric cooler.
[0018] The first TEC substrate and the second TEC substrate are placed in the metal shell (19) for sealing and packaging.
[0019] The thickness of the metal shell is not less than 1 mm.
[0020] The input isolator (3), the intermediate isolator (8) and the output isolator (14) are free-space isolators based on the Faraday optical rotation effect to ensure one-way transmission of light.
[0021] The input isolator (3), the intermediate isolator (8) and the output isolator (14) are isolators with bipolar isolation effect, the isolation degree range is 40 dB, and the size is matched with the input optical fiber.
[0022] The small-sized, low-power-consumption and high-gain semiconductor optical amplifier is used to realize a working method of high gain, in which the first-stage amplification chip and the second-stage amplification chip are semiconductor amplification chips, the semiconductor optical amplifier uses two semiconductor amplification chips on the internal optical path, and uses a free-space isolator and a filter between the two semiconductor amplification chips to expand the working interval of the input signal light from the linear region to the nonlinear region, so as to fully utilize the gain effect of the two-stage semiconductor amplification chips to achieve high gain under low power consumption.
[0023] The input isolator is arranged behind the input optical fiber and in front of the first amplification chip, so as to effectively avoid the reverse spontaneous emission light generated by the first amplification chip in the working process from entering the input optical fiber again, and reduce the interference on the input light source;
[0024] The output light of the first amplification chip enters the intermediate isolator after collimation by the aspheric lens;
[0025] The intermediate isolator is arranged between the first amplification chip and the second amplification chip, and is used for allowing the light amplified by the first amplification chip to be transmitted in one direction into the second amplification chip, preventing the output light of the first amplification chip from being reflected back into the first amplification chip, causing the first amplification chip to be excited and amplified again, and avoiding the stimulated amplification effect from reducing the output and causing the output light power to oscillate,
[0026] The intermediate isolator is also used for preventing the reverse spontaneous emission light of the second amplification chip from entering the first amplification chip, causing the output light power to oscillate and leading to the output light power being reduced and unstable;
[0027] The filter is used for filtering the spontaneous emission light generated by the first amplification chip, and only allows the signal light to enter the second amplification chip,
[0028] The filter is customized according to different wave bands, and passive filters or tunable filters MTOF are selected according to the single wave, multiple wave or tunable wave application scenarios of optical communication;
[0029] The optical amplifier detects the working temperatures of the two amplification chips in real time through the two NTCs, and the TEC substrate controls the substrate temperature through the temperature feedback of the temperature detector, so as to maintain the reliable working temperature environment of the first amplification chip and the second amplification chip.
[0030] The metal shell airtightly encapsulates the optical elements of the optical amplifier to form a vacuum environment, so as to protect the optical elements in a constant temperature and constant pressure environment, avoid external interference, and ensure that the device works under efficient and stable working conditions.
[0031] The utility model optimizes the technical scheme of the traditional SOA, solves the problem that the gain is difficult to be further improved due to the Auger effect caused by high carrier concentration of single-stage SOA by using the function of two-stage amplification, and combines the advantages of high integration and miniaturization of SOA devices, and uses the free space coupling mode to highly integrate all optical elements and chips on the substrate of the two temperature-controllable TECs, so as to realize the advantages of miniaturization, low power consumption and high gain of the amplifier.
[0032] The utility model discloses a high gain of optical amplifier can be realized, and the application realizes 58dB's high gain through two stage amplification, compared with single stage amplification, even if current adds to 1000mA, due to the carrier concentration is too high, the gain can only reach 40dB at most. The high gain characteristic is very suitable for the condition of very small input (-45dBm) in optical communication field, and the output power can reach 13dBm.
[0033] The utility model discloses low power consumption of optical amplifier can be realized, and the application realizes low current's working mode through two stage amplification, and the power consumption is only 0.46W, and relatively, the power consumption of single stage amplification is 2.14W, and the power consumption of single stage amplification is 4.6 times of two stage amplification chip power consumption, so that the heat dissipation of device proposes the severe challenge, leads to device total power consumption height, and the heat dissipation is poor, and finally influences the optical output performance of device.
[0034] The utility model discloses the miniaturization of optical amplifier can be realized, and input output optical fiber, non -spherical, primary and secondary amplification chip, 3 free space isolator, filter piece are integrated on thermoelectric refrigeration base plate, and the package size is small, and compared with traditional amplifier, because traditional amplifier needs external package optical device, and the device is connected with the device with optical fiber, so the size is big, and it is difficult to further reduce the volume. BRIEF DESCRIPTION OF DRAWINGS
[0035] The utility model will be further explained in detail in the following combining with the specific embodiment and the drawing:
[0036] ATTACH Figure 1 It is the schematic diagram of the utility model;
[0037] ATTACH Figure 2 It is the amplification working curve schematic diagram of primary amplification chip;
[0038] ATTACH Figure 3 It is the contrastive schematic diagram of the amplification working curve of primary amplification chip, secondary amplification chip cooperation work and only having one amplification chip;
[0039] In the drawing: 1-transmission optical fiber;2-first hemisphere lens;3-input isolator;4-second hemisphere lens;5-primary amplification chip;6-first chip NTC;-7-third hemisphere lens;8-intermediate isolator;9-filter piece;10-fourth hemisphere lens;11-secondary amplification chip;12-second chip NTC;13-fifth hemisphere lens;14-output isolator;15-sixth hemisphere lens;16-output optical fiber. CONCRETE EMBODIMENT
[0040] Such as Figure 1The shown small-sized low-power and high-gain semiconductor optical amplifier comprises a first-stage amplification module and a second-stage amplification module arranged along an optical path; the first-stage amplification module comprises a transmission optical fiber 1, an input isolator 3, a first-stage amplification chip 5 and an intermediate isolator 8 arranged along the optical path in sequence; the second-stage amplification module comprises a filter 9, a second-stage amplification chip 11, an output isolator 14 and an output optical fiber 16 arranged along the optical path in sequence; the optical signal output by the intermediate isolator of the first-stage amplification module is received by the filter of the second-stage amplification module.
[0041] In the first-stage amplification module, a first hemispherical lens 2 for signal light spot collimation is arranged between the transmission optical fiber and the input isolator, and a second hemispherical lens 4 for light spot collimation is arranged between the input isolator and the first-stage amplification chip; after the collimation processing, the signal light is transmitted into the first-stage amplification chip through the input isolator to perform the first optical signal amplification, and then output to the intermediate isolator.
[0042] A third hemispherical lens 7 for collimating the optical signal output by the first-stage amplification chip is arranged between the first-stage amplification chip and the intermediate isolator.
[0043] In the second-stage amplification module, the filter is used to filter the optical signal input by the first-stage amplification module; after the filtering processing, the optical signal is transmitted to the second-stage amplification chip to perform the second optical signal amplification, and then output to the output optical fiber through the output isolator.
[0044] A fourth hemispherical lens 10 for collimating the filtered optical signal is arranged between the filter and the second-stage amplification chip, a fifth hemispherical lens 13 for collimating the optical signal output by the second-stage amplification chip is arranged between the second-stage amplification chip and the output isolator, and a sixth hemispherical lens 15 for collimating the optical signal output by the output isolator is arranged between the output isolator and the output optical fiber.
[0045] The first-stage amplification chip is integrated with a first chip NTC 6 having a temperature detection function at its COC, and the second-stage amplification chip is integrated with a second chip NTC 12 having a temperature detection function at its COC.
[0046] The optical elements of the first-stage amplification module are arranged on a first TEC substrate 17 of a thermoelectric cooler, and the optical elements of the second-stage amplification module are arranged on a second TEC substrate 18 of the thermoelectric cooler.
[0047] The first TEC substrate and the second TEC substrate are placed in a metal shell 19 for sealing and packaging.
[0048] The thickness of the metal shell is not less than 1 mm.
[0049] The input isolator 3, the intermediate isolator 8 and the output isolator 14 are free space isolators based on Faraday optical rotation effect to ensure one-way transmission of light.
[0050] The input isolator 3, the intermediate isolator 8 and the output isolator 14 are isolators with bipolar isolation effect, the isolation degree ranges from 40 dB, and the size is matched with the input optical class.
[0051] The semiconductor optical amplifier with miniaturization, low power consumption and high gain is used to realize a working method of high gain, wherein the first-stage amplification chip and the second-stage amplification chip are semiconductor amplification chips, the semiconductor optical amplifier uses two semiconductor amplification chips on an internal optical path, and uses a free space isolator and a filter between the two semiconductor amplification chips to expand the working interval of the input signal light from a linear region to a nonlinear region, so as to fully utilize the gain effect of the two-stage semiconductor amplification chips to achieve high gain under low power consumption.
[0052] The input isolator is arranged after the input optical fiber and before the first-stage amplification chip, so as to effectively avoid the reverse spontaneous emission light generated by the first-stage amplification chip in the working process from entering the input optical fiber again and reduce the interference on the input light source.
[0053] The output light of the first-stage amplification chip enters the intermediate isolator after being collimated by the aspheric lens.
[0054] The intermediate isolator is arranged between the first-stage amplification chip and the second-stage amplification chip, and is used to allow the light amplified by the first-stage amplification chip to be transmitted to the second-stage amplification chip in one direction, prevent the output light of the first-stage amplification chip from being reflected back to the inside of the first-stage amplification chip, cause the first-stage amplification chip to be excited and amplified twice, and avoid the stimulated amplification effect from reducing the output and causing the output light power to oscillate.
[0055] The intermediate isolator is also used to prevent the reverse spontaneous emission light of the second-stage amplification chip from entering the first-stage amplification chip, cause the output light power to oscillate, and lead to unstable and reduced output light power.
[0056] The filter is used to filter the spontaneous emission light generated by the first-stage amplification chip, and only allows the signal light to enter the second-stage amplifier.
[0057] The filter is customized according to different wave bands according to the single wave, multi-wave or tunable wave application scenarios of optical communication, and a passive filter or a tunable filter MTOF is selected for use.
[0058] The optical amplifier detects the working temperature of the two amplification chips in real time through two NTCs, and the TEC substrate controls the substrate temperature through the temperature feedback of the temperature detector, so as to maintain a reliable working temperature environment for the first-stage amplification chip and the second-stage amplification chip.
[0059] The metal shell airtightly encapsulates the optical elements of the optical amplifier to form a vacuum environment, so as to protect the optical elements in a constant temperature and constant pressure environment, prevent external interference, and ensure that the device works under high efficiency and stable working conditions.
[0060] Embodiment:
[0061] In this example, Figure 1 The schematic diagram of this embodiment is shown in the figure: transmission optical fiber 1, aspherical lens (2, 4, 7, 10, 13, 15), free space isolator (input isolator 3, intermediate isolator 8, and output isolator 14), first amplification chip 5, second amplification chip 11, first chip temperature detection chip NTC 6, second chip temperature detection chip NTC 12, filter 9, first thermoelectric cooler TEC 17, second thermoelectric cooler TEC 18, and metal shell 19.
[0062] The input optical fiber 1 collimates the light spot through the aspherical lens 2. The collimated output light of the aspherical lens 2 enters the free space input isolator 3, and the output light of the isolator enters the aspherical lens 4 for light spot collimation. The output signal light is transmitted into the first amplification chip 5 for one-time optical signal amplification. The amplified light signal is collimated by the aspherical lens 7 and enters the intermediate isolator 8. The output light of the isolator is filtered by the filter 9, and the filtered light is collimated by the aspherical lens 10 and enters the second amplification chip for amplification. The amplified light is collimated by the aspherical lens 13, and the output light of the aspherical lens 13 enters the output isolator 14. The output light of the output isolator is collimated by the aspherical lens 15 and finally coupled into the output optical fiber 16. The first amplification chip 5 is integrated with the chip NTC 14 having a temperature detection function on the COC, and the second amplification chip 11 is integrated with the chip NTC 12 having a temperature detection function on the COC. The above optical elements 1~8 are placed on the substrate 17 of the thermoelectric cooler TEC, and the optical elements 9~16 are placed on the substrate 18 of the thermoelectric cooler TEC. The two TEC substrates are placed in the metal shell 19 with a thickness of 1mm for sealing and packaging.
[0063] The input optical fiber 1 is used to transmit the input signal light before amplification at the input end of the fiber amplifier. The wavelength range of the signal light is not limited to the C band (1530~1565nm) or the L band (1565~1625nm), and the wavelength range depends on the required optical signal wavelength of optical communication.
[0064] In this example, the aspherical lens (2, 4, 7, 10, 13, 15) is used to collimate and transmit the light spot output from the optical fiber, which is widely used in free space and collimation coupling between chips and optical fibers. The material is not limited to plastic or optical glass, and the focusing size is not limited to 2~11mm, which is related to the size, shape, and wavelength of the light spot transmitted by the optical fiber that needs to be collimated, and is not specifically limited.
[0065] In this example, the free-space isolator (3, 8, 14) uses the Faraday optical rotation effect to ensure one-way transmission of light. The isolation of the isolator is between 20-40 dB, and a isolator with bipolar isolation is preferred, with an isolation of about 40 dB. The size is selected according to the size of the light spot, and is not limited. The input isolator 3 is placed after the input fiber and before the first amplification chip, which can effectively prevent the reverse spontaneous emission light generated by the first amplification chip during operation from re-entering the input fiber, reducing the interference to the input light source. The output light of the input isolator 3 passes through the aspheric lens and enters the first amplification chip 5 for one-time amplification of the optical signal. The first amplification chip needs to select different gain medium materials and different cavity lengths of 1000-3000 um according to the gain size. This example uses a cavity length of 2500 um. Assuming that the input light is -45 dBm, the current applied to the first amplification chip is 200 mA, and the corresponding voltage is 1.14 V, so the power consumption of the first chip is 0.23 W. Since -45 dBm is a small signal light injection, the first chip works in the linear region, and the corresponding gain is 35 dB at 200 mA, so the output power is -10 dBm. The amplification working curve of the first amplification chip is shown in Figure 2
[0066] As can be seen from the Gain-Pin curve, in the linear working region of the first amplification chip, the gain remains unchanged at 35 dB as the input increases from -45 dBm to -28 dBm. When the input exceeds -28 dBm, the gain gradually decreases. As can be seen from the Gain-Output curve, in the linear working region, the gain remains unchanged at 35 dB for different outputs. When the output is greater than 6 dBm, the gain begins to decrease sharply until the gain is about 5 dB.
[0067] The output light of the first chip passes through the aspheric lens and enters the intermediate isolator 8. The intermediate isolator is between the first and second amplification chips, and its main function is to allow the light amplified by the first chip to transmit from left to right into the second amplification chip, preventing the output light of the first amplification chip from reflecting back into the first amplification chip, causing the first amplification chip to be excited twice. Not only does this reduce the output, but it also causes the output light power to fluctuate. At the same time, it also prevents the reverse spontaneous emission light of the second amplification chip 11 from entering the first amplification chip, causing the output light power to fluctuate, ultimately leading to a decrease in output light power and instability. The filter 9 is used to filter the spontaneous emission light generated by the first amplification chip, and only the signal light enters the second amplification chip. The filter can be customized according to the needs of different wavebands, not limited to C or L waves. At the same time, according to the different application scenarios of optical communication (single wave, multiple waves or tunable wave), passive filters (DWDM, CWDM) or tunable filters MTOF are selected for use. Similarly, only the core working elements of the filter are retained, and the free-space combination does not require additional packaging, ensuring the miniaturization of the device.
[0068] The output light of the filter 9 is collimated by the aspheric lens 10 and enters the secondary amplification chip 11 for secondary amplification. The output light of the primary amplifier is -10 dBm, and at this time, the input light (> -28 dBm) has entered the nonlinear working area for the secondary amplifier. In the nonlinear working area, the gain corresponding to the -10 dBm input is 23 dB at a working current of 200 mA. Although the gain of 23 dB is smaller than the gain of 35 dB in the linear working area, the gain of 23 dB can amplify the input light of -10 dBm to 13 dBm, and the total gain reaches 58 dB. The power consumption of the secondary amplifier is also 0.23 W, and the total power consumption of the two amplification chips is 0.46 W.
[0069] As shown in Figure 3 If a single chip is used, the current is simply increased to 400 mA, the voltage is 1.43 V, and the power consumption is 0.57 W, which is greater than the total power consumption of the two chips. In the case of -45 dBm injection, the secondary amplification chip works in the linear area, and the total gain is 38 dB, so the output power is -7 dBm. If the current of the secondary amplifier is increased to the limit of 1000 mA, the voltage is 2.14 V, and the total power consumption is 2.14 W, which is 4.6 times the power consumption of the two-stage amplification chip. However, due to the high carrier concentration, the maximum gain is 40 dB, and the output power is -5 dBm, which is much smaller than the gain of 58 dB of the two-stage amplification chip. At the same time, due to the high power consumption of the chip, the power consumption of the thermoelectric cooler TEC used for cooling also increases by several times to control the temperature of the chip, thus posing a severe challenge to the heat dissipation of the device.
[0070] The primary amplification chip integrates a temperature detection chip NTC 6, and the secondary amplification chip integrates a temperature detection chip NTC 12. The working temperature of the two NTC real-time detection chips is detected in real time, and the temperature of the thermoelectric cooler TEC substrates 17 and 18 is fed back by the temperature detector, so that the primary and secondary chips can be effectively controlled to work in an ideal temperature condition. The metal shell 19 performs airtight packaging treatment (under vacuum conditions) on all optical elements, protects the optical elements in a constant temperature and pressure, avoids external interference, and ensures that the device works under efficient and stable working conditions.
[0071] This example can solve the problem that a single-chip semiconductor amplifier is adversely affected by Auger non-radiative recombination at high current, resulting in gain saturation, output power not proportional to input current, and gain unable to be further improved. In this example, two semiconductor amplification chips are used to achieve high gain, and a free-space isolator and a filter are used between the two semiconductor amplification chips to realize the working of signal light from the linear area to the nonlinear area, fully utilize the gain effect of the semiconductor, and achieve low power consumption and high gain.
Claims
1. A small-sized, low-power-consumption, and high-gain semiconductor optical amplifier, characterized by: The optical amplifier comprises a first-stage amplification module and a second-stage amplification module arranged along an optical path; the first-stage amplification module comprises, arranged along the optical path in sequence, a transmission optical fiber (1), an input isolator (3), a first-stage amplification chip (5), and an intermediate isolator (8); the second-stage amplification module comprises, arranged along the optical path in sequence, a filter (9), a second-stage amplification chip (11), an output isolator (14), and an output optical fiber (16); the optical signal output by the first-stage amplification module through the intermediate isolator is received by the filter of the second-stage amplification module.
2. The compact low-power-consumption and high-gain semiconductor optical amplifier according to claim 1, characterized by: In the first-stage amplification module, a first hemispherical lens (2) for signal light spot collimation is arranged between the transmission optical fiber and the input isolator, and a second hemispherical lens (4) for light spot collimation is arranged between the input isolator and the first-stage amplification chip; the collimated signal light is transmitted into the first-stage amplification chip through the input isolator, and the first-stage amplification chip amplifies the optical signal for the first time, and then the optical signal is output to the intermediate isolator. A third hemispherical lens (7) for collimating the optical signal output by the first-stage amplification chip is arranged between the first-stage amplification chip and the intermediate isolator.
3. The compact low-power-consumption and high-gain semiconductor optical amplifier according to claim 2, characterized by: In the second-stage amplification module, the filter is used for filtering the optical signal input by the first-stage amplification module, the filtered optical signal is transmitted to the second-stage amplification chip for the second time of optical signal amplification, and then the optical signal is sent to the output optical fiber through the output isolator for output; A fourth hemispherical lens (10) for collimating the filtered optical signal is arranged between the filter and the second-stage amplification chip, a fifth hemispherical lens (13) for collimating the optical signal output by the second-stage amplification chip is arranged between the second-stage amplification chip and the output isolator, and a sixth hemispherical lens (15) for collimating the optical signal output by the output isolator is arranged between the output isolator and the output optical fiber.
4. The compact low-power-consumption and high-gain semiconductor optical amplifier according to claim 1, characterized by: The first-stage amplification chip is integrated with a first chip NTC (6) having a temperature detection function at the COC of the first-stage amplification chip, and the second-stage amplification chip is integrated with a second chip NTC (12) having a temperature detection function at the COC of the second-stage amplification chip.
5. The compact low-power-consumption and high-gain semiconductor optical amplifier according to claim 4, characterized by: The optical elements of the first-stage amplification module are arranged on a first TEC substrate (17) of a thermoelectric cooler, and the optical elements of the second-stage amplification module are arranged on a second TEC substrate (18) of the thermoelectric cooler.
6. The compact low-power-consumption and high-gain semiconductor optical amplifier according to claim 5, characterized by: The first TEC substrate and the second TEC substrate are placed in a metal shell (19) for sealing and packaging.
7. The compact low-power-consumption and high-gain semiconductor optical amplifier according to claim 6, characterized by: The thickness of the metal shell is not less than 1 mm.
8. The compact low-power-consumption and high-gain semiconductor optical amplifier according to claim 1, characterized by: The input isolator (3), the intermediate isolator (8), and the output isolator (14) are free-space isolators based on the Faraday optical rotation effect to ensure one-way transmission of light.
9. The compact low-power-consumption and high-gain semiconductor optical amplifier according to claim 8, characterized by: The input isolator (3), the intermediate isolator (8), and the output isolator (14) are isolators with bipolar isolation effect, the isolation degree range is 40 dB, and the size is matched with the input optical fiber.