Hysteresis comparison circuit and system
By combining the hysteresis decision module and the signal generation module, and adjusting the bias voltage to control the switching module, the problem of high power consumption of the hysteresis comparator circuit is solved, and low-power hysteresis voltage output is achieved.
Patent Information
- Application Number
- CN202423222926.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-25
- Publication Date
- 2026-01-02
- Estimated Expiration
- 2034-12-25
AI Technical Summary
In the existing technology, the hysteresis comparator circuit has poor hysteresis comparator voltage output performance and has a large power consumption problem.
By setting up a hysteresis decision module and a signal generation module, adjusting the bias voltage, and controlling the switching module to turn on or off through different bias voltages and power supply voltages, hysteresis output is achieved, reducing the power consumption of the hysteresis comparator circuit.
It achieves a good hysteresis voltage output effect while reducing the power consumption of the hysteresis comparator circuit without the need for additional circuit structure.
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Figure CN223758256U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to comparison circuit technical field especially, it relates to a kind of hysteresis comparison circuit and system. BACKGROUND
[0002] The output of hysteresis comparison voltage can be realized by comparator or Schmidt trigger. Comparator is a commonly used circuit module in integrated circuit, if you want to realize the output of hysteresis comparison voltage, you need to realize it by using comparator with additional circuit structure, which has large space occupation and large power consumption. If you directly use Schmidt trigger to output hysteresis comparison voltage, it will also cause large power consumption in the circuit. Therefore, the output effect of hysteresis comparison voltage in the prior art is poor. SUMMARY
[0003] The utility model provides a kind of hysteresis comparison circuit and system to improve the output effect of hysteresis comparison voltage.
[0004] According to one aspect of the utility model, a kind of hysteresis comparison circuit is provided, comprising:
[0005] Hysteresis decision module, the first end of the hysteresis decision module is connected to power supply voltage, for generating bias voltage;
[0006] Switching module, the first end of the switching module is connected with the power supply voltage, the control end of the switching module is connected with the second end of the hysteresis decision module, the third end of the switching module is grounded;The switching module is used to output detection voltage from second end;
[0007] Signal generation module, the first end of the signal generation module is connected with the second end of the switching module, the second end of the signal generation module is connected with the control end of the hysteresis decision module, the power supply end of the signal generation module is connected with the power supply voltage;The signal generation module is used to control the hysteresis decision module adjusts the bias voltage.
[0008] Optionally, the hysteresis decision module comprises:
[0009] Boost unit and buck unit, the first end of the boost unit is connected with the power supply voltage, the second end of the boost unit is connected with the first end of the buck unit, the second end of the buck unit is grounded, and the connection between the second end of the boost unit and the first end of the buck unit serves as the second end of the hysteresis decision module;The control end of the boost unit and the buck unit is connected with the second end of the signal generation module;The boost unit is used to boost the bias voltage, and the buck unit is used to step down the bias voltage.
[0010] Optionally, the voltage boosting unit comprises a first transistor, a second transistor and a third transistor.
[0011] The first end of the first transistor and the second transistor is connected with the power voltage, the control end of the first transistor and the second transistor is grounded, the second end of the first transistor is connected with the first end of the voltage reducing unit; the first end of the third transistor is connected with the second end of the second transistor, the second end of the third transistor is connected with the first end of the voltage reducing unit; the control end of the third transistor is connected with the second end of the signal generating module; the third transistor is used for turning on or turning off according to the control signal output by the signal generating module.
[0012] Optionally, the voltage reducing unit comprises a fourth transistor, a fifth transistor and a sixth transistor.
[0013] The first end of the fourth transistor and the fifth transistor is connected with the second end of the voltage boosting unit, the second end of the fourth transistor and the fifth transistor is connected with the first end of the sixth transistor, the control end of the fourth transistor is connected with the first end of the fourth transistor, the control end of the sixth transistor is connected with the first end of the sixth transistor, the second end of the sixth transistor is grounded; the control end of the fifth transistor is connected with the second end of the signal generating module; the fifth transistor is used for turning on or turning off according to the control signal.
[0014] Optionally, the third transistor, the fourth transistor, the fifth transistor and the sixth transistor comprise a thick gate transistor.
[0015] Optionally, the switch module comprises a seventh transistor, the first end of the seventh transistor is connected with the power voltage, the control end of the seventh transistor is connected with the second end of the hysteresis judgment module, the second end of the seventh transistor is connected with the first end of the signal generating module; the seventh transistor is used for turning on or turning off according to the difference between the bias voltage and the power voltage.
[0016] Optionally, the switch module further comprises an eighth transistor and a ninth transistor, the first end of the eighth transistor is connected with the second end of the seventh transistor, the control end of the eighth transistor is grounded, the first end of the ninth transistor is connected with the second end of the eighth transistor, the second end of the ninth transistor is grounded, the control end of the ninth transistor is connected with the first end of the ninth transistor; the eighth transistor and the ninth transistor are used for adjusting the detection voltage.
[0017] Optionally, the signal generating module comprises a first inverter and a second inverter.
[0018] The first end of the first reverser is connected with the second end of the switch module, the second end of the first reverser is connected with the first end of the second reverser, the second end of the second reverser is used as the second end of the signal generation module, and the power supply ends of the first reverser and the second reverser are connected with the power supply voltage; the first reverser and the second reverser are used for converting the detection voltage into a control signal.
[0019] Optionally, the control signal comprises a square wave signal.
[0020] According to another aspect of the present application, a hysteresis comparison system is provided, comprising the hysteresis comparison circuit according to any of the embodiments of the present application.
[0021] The technical scheme provided by the present application comprises a hysteresis decision module and a signal generation module, which can adjust the bias voltage, and the on or off of the switch module is controlled by different bias voltages and power supply voltages, thereby realizing the hysteresis output of the power supply voltage. The hysteresis decision module has a small conduction current, so that the hysteresis comparison circuit has low power consumption. The present application does not need to increase additional circuit structure, and can further reduce power consumption, and has good hysteresis voltage output effect.
[0022] It should be understood that the content described in this part is not intended to identify the key or important features of the embodiments of the present application, nor is it used to limit the scope of the present application. Other features of the present application will become apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS
[0023] In order to more clearly illustrate the technical scheme in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present application, and other drawings can also be obtained according to these drawings without creative labor for those skilled in the art.
[0024] Figure 1 is a structure schematic diagram of a hysteresis comparison circuit according to an embodiment of the present application;
[0025] Figure 2 is a structure schematic diagram of another hysteresis comparison circuit according to an embodiment of the present application;
[0026] Figure 3 is a structure schematic diagram of another hysteresis comparison circuit according to an embodiment of the present application;
[0027] Figure 4 is a simulation diagram of a hysteresis comparison circuit according to an embodiment of the present application. DETAILED DESCRIPTION
[0028] In order to make the person skilled in the art better understand the technical scheme of the present application, the technical scheme in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by the person skilled in the art without creative labor should belong to the scope of protection of the present application.
[0029] It should be noted that the terms "first", "second" and the like in the specification and claims of the present application and the above drawings are used to distinguish similar objects, and do not necessarily have to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to these processes, methods, products or devices.
[0030] The embodiment of the present application provides a hysteresis comparison circuit. Figure 1 The structure diagram of the hysteresis comparison circuit provided by the embodiment of the present application is shown in Figure Figure 1 The hysteresis comparison circuit comprises a hysteresis decision module 1, a switch module 2 and a signal generation module 3. The first end of the hysteresis decision module 1 is connected to the power supply voltage for generating a bias voltage. The first end of the switch module 2 is connected to the power supply voltage, the control end of the switch module 2 is connected to the second end of the hysteresis decision module 1, and the third end of the switch module 2 is grounded; the switch module 2 is used to output a detection voltage from the second end. The first end of the signal generation module 3 is connected to the second end of the switch module 2, the second end of the signal generation module 3 is connected to the control end of the hysteresis decision module 1, and the power supply end of the signal generation module 3 is connected to the power supply voltage; the signal generation module 3 is used to control the hysteresis decision module 1 to adjust the bias voltage.
[0031] The power supply voltage is an adjustable voltage. Exemplarily, the power supply can include an energy storage capacitor, when the energy storage capacitor is charged, the voltage will continuously rise; when the energy storage capacitor is completed and discharged, the voltage will continuously decrease. In order to prevent the energy storage capacitor from stopping discharging immediately after the voltage of the energy storage capacitor decreases, the hysteresis comparison circuit is set to stop discharging after a certain time.
[0032] Specifically, when the power supply voltage continuously rises from zero, the bias voltage generated by the hysteresis decision module 1 also continuously rises from zero, at this time, the voltage difference between the power supply voltage and the bias voltage is small, the switch module 2 is turned off due to the small voltage difference between the first end and the control end, at this time, the switch module 2 can only output a small leakage current to generate a small detection voltage, and the signal generation module 3 can judge that the power supply voltage is in the stage of voltage continuous rise according to the detection voltage, and control the hysteresis decision module 1 to increase the bias voltage. Because the hysteresis decision module 1 has a small conduction current, the increasing speed of the bias voltage is slower than the rising speed of the power supply voltage, therefore, the voltage difference between the first end and the control end of the switch module 2 gradually rises until the conduction voltage of the switch module 2 is reached. When the switch module 2 is turned on, the detection voltage is instantaneously raised to a value close to the power supply voltage. The signal generation module 3 can judge that the power supply voltage has reached the maximum value of the voltage according to the detection voltage, at this time, the power supply can be discharged.
[0033] Exemplarily, the power supply voltage can be discharged when increasing to 1.1V. To ensure that the power supply does not immediately stop discharging when the power supply voltage is less than 1.1V, when the power supply voltage reaches the maximum value of the voltage, the signal generation module 3 immediately controls the hysteresis decision module 1 to reduce the bias voltage, which is equivalent to increasing the voltage difference between the first end and the control end of the switch module 2, and the conduction degree of the switch module 2 is increased. When the power supply voltage decreases, the switch module 2 will not be instantaneously turned off due to the large voltage difference between the first end and the control end. At this time, the signal generation module 3 continues to control the hysteresis decision module 1 to reduce the bias voltage, and the decreasing speed of the power supply voltage is faster than the decreasing speed of the bias voltage, therefore, the voltage difference between the first end and the control end of the switch module 2 gradually decreases to turn off the switch module 2. For example, the power supply voltage can turn off the switch module 2 when decreasing to 0.9V. Through this setting mode, the hysteresis voltage output during the period from 1.1V to 0.9V of the power supply voltage is realized when the power supply is discharged, and the voltage output effect is good.
[0034] The technical scheme provided by the embodiment of the utility model realizes the adjustment of the bias voltage through the setting of the hysteresis decision module 1 and the signal generation module 3, and realizes the hysteresis output of the power supply voltage by controlling the conduction or turn-off of the switch module 2 through different bias voltages and power supply voltages. Moreover, the hysteresis decision module 1 has a small conduction current, so that the hysteresis comparison circuit has a low power consumption. The utility model does not need to increase additional circuit structure, can further reduce the power consumption, and has a good hysteresis voltage output effect.
[0035] Figure 2 Another hysteresis comparison circuit structure schematic diagram provided by the embodiment of the utility model is provided. Figure 2On the basis of the above embodiments, optionally, the hysteresis judgment module 1 comprises: a voltage boosting unit 11 and a voltage reducing unit 12. The first end of the voltage boosting unit 11 is connected with the power supply voltage, the second end of the voltage boosting unit 11 is connected with the first end of the voltage reducing unit 12, the second end of the voltage reducing unit 12 is grounded, and the connection between the second end of the voltage boosting unit 11 and the first end of the voltage reducing unit 12 serves as the second end of the hysteresis judgment module 1; the control ends of the voltage boosting unit 11 and the voltage reducing unit 12 are both connected with the second end of the signal generation module 3; the voltage boosting unit 11 is used for boosting the bias voltage, and the voltage reducing unit 12 is used for reducing the bias voltage.
[0036] When the power supply voltage continuously rises from zero, the switch module 2 is in the off state, so that the detection voltage has a lower voltage value. At this time, the signal generation module 3 controls the voltage boosting unit 11 to be turned on and controls the voltage reducing unit 12 to be turned off, the current of the voltage boosting unit 11 is higher than that of the voltage reducing unit 12, so that the bias voltage continuously rises along with the power supply voltage. The voltage boosting unit 11 has a smaller conduction current, and the rising speed of the bias voltage will be slower than that of the power supply voltage. As the voltage difference between the bias voltage and the power supply voltage gradually increases, the switch module 2 is turned on, so that the detection voltage is lifted at the moment when the switch module 2 is turned on. At this time, the signal generation module 3 controls the voltage boosting unit 11 to be turned off and controls the voltage reducing unit 12 to be turned on, so that the current of the voltage reducing unit 12 is higher than that of the voltage boosting unit 11, and the voltage reducing unit 12 will pull down the bias voltage, so that the voltage difference between the bias voltage and the power supply voltage increases.
[0037] Therefore, when the power supply is discharged, the power supply voltage decreases, and the switch module 2 will not be turned off instantaneously due to the larger voltage difference, so that the voltage reducing unit 12 can continuously pull down the bias voltage for a certain period of time. The power supply voltage decreases faster than the bias voltage, so that the switch module 2 will be turned off due to the gradually decreasing voltage difference between the first end and the control end, so that the detection voltage decreases rapidly. When the detection voltage decreases to a certain value, the signal generation module 3 controls the voltage boosting unit 11 to be turned on and controls the voltage reducing unit 12 to be turned off.
[0038] The utility model realizes that the power supply voltage hysteresis outputs for a certain period of time when the voltage boosting unit 11 is turned off and the voltage reducing unit 12 is turned on, and stops outputting when the voltage boosting unit 11 is turned on and the voltage reducing unit 12 is turned off.
[0039] Figure 3 Another hysteresis comparison circuit structure schematic diagram provided for the utility model embodiment. Reference Figure 3Based on the above embodiments, optionally, the boost unit 11 includes: a first transistor NM1, a second transistor NM2, and a third transistor PM3. The first terminals of both the first transistor NM1 and the second transistor NM2 are connected to the power supply voltage, and the control terminals of both the first transistor NM1 and the second transistor NM2 are grounded. The second terminal of the first transistor NM1 is connected to the first terminal of the buck unit 12. The first terminal of the third transistor PM3 is connected to the second terminal of the second transistor NM2, and the second terminal of the third transistor PM3 is also connected to the first terminal of the buck unit 12. The control terminal of the third transistor NM3 is connected to the second terminal of the signal generation module 3. The third transistor PM3 is used to turn on or off according to the control signal EN output by the signal generation module 3.
[0040] Optionally, the third transistor PM3 can be a thick-gate transistor. A thick-gate transistor has a relatively large gate oxide layer, which can withstand higher voltages, thus improving the transistor's voltage withstand capability. Compared to ordinary thin-gate transistors, thick-gate transistors have higher threshold voltages and lower on-state currents.
[0041] Among them, the first transistor NM1 and the second transistor NM2 can be N-type low threshold transistors. Since the control terminals of the first transistor NM1 and the second transistor NM2 are grounded, the control terminals of the first transistor NM1 and the second transistor NM2 will not receive a high level and be fully turned on. The first transistor NM1 and the second transistor NM2 have only a small leakage current.
[0042] The low-threshold transistor has a low turn-on voltage. Using a low-threshold transistor ensures that the current in the circuit containing the first transistor NM1 and the second transistor NM2 will not drop to zero. The normal operation of the hysteresis comparator circuit is guaranteed solely by the leakage current of the first transistor NM1 and the second transistor NM2. When the power supply voltage continues to rise, the signal generation module 3 generates a control signal EN to control the third transistor PM3 to turn on, thus increasing the bias voltage V. bias It can be improved. Furthermore, because the first transistor NM1, the second transistor NM2, and the third transistor PM3 all have low current, the hysteresis comparator circuit has low operating power consumption.
[0043] Due to bias voltage V bias The boost rate is lower than the power supply voltage V. cp The boost rate, when the bias voltage V bias With power supply voltage V cp When the difference between the two values is greater than the on-state voltage of switch module 2, switch module 2 turns on and instantaneously transmits the detected voltage V. det Raise it to near the power supply voltage V cp Signal generation module 3 can update the control signal EN to control the third transistor PM3 to turn off, thus causing the bias voltage V to...bias No longer continue to improve.
[0044] Continuing to refer to Figure 3 , on the basis of the above embodiments, optionally, the voltage reduction unit 12 comprises: a fourth transistor NM4, a fifth transistor NM5 and a sixth transistor NM6. The first end of the fourth transistor NM4 and the fifth transistor NM5 are connected with the second end of the voltage increasing unit 11, the second end of the fourth transistor NM4 and the fifth transistor NM5 are connected with the first end of the sixth transistor NM6, the control end of the fourth transistor NM4 is connected with the first end of the fourth transistor NM4, the control end of the sixth transistor NM6 is connected with the first end of the sixth transistor NM6, and the second end of the sixth transistor NM6 is grounded; the control end of the fifth transistor NM5 is connected with the second end of the signal generation module 3; the fifth transistor NM5 is used for turning on or turning off according to the control signal EN.
[0045] Exemplarily, the fourth transistor NM4, the fifth transistor NM5 and the sixth transistor NM6 can be N-type thick gate transistors. Since the third transistor PM3 and the fifth transistor NM5 are P-type transistor and N-type transistor respectively, when the third transistor PM3 and the fifth transistor NM5 receive the control signal EN, only one of them can be turned on.
[0046] Optionally, the control signal EN comprises a square wave signal. When the power supply voltage V cp is in the voltage rising phase, the voltage value of the detection voltage V det is low, the signal generation module 3 outputs a low-level square wave signal, so that the third transistor PM3 is turned on and the fifth transistor NM5 is turned off. At this time, the sum of the transmission currents of the first transistor NM1, the second transistor NM2 and the third transistor PM3 is greater than the sum of the transmission currents of the fourth transistor NM4 and the sixth transistor NM6, so that the bias voltage V bias can continue to increase the size of the power supply voltage V cp . The voltage rising speed of the power supply voltage V cp is greater than the voltage rising speed of the bias voltage V bias , when the difference between the bias voltage V bias and the power supply voltage V cp is greater than the on-voltage of the switching module 2, the switching module 2 is turned on and the detection voltage V det is raised to close to the power supply voltage V cp instantaneously. The signal generation module 3 receives a higher detection voltage V det and converts the output square wave signal to high level, so that the third transistor PM3 is turned off and the fifth transistor NM5 is turned on.
[0047] When the third transistor PM3 is turned off and the fifth transistor NM5 is turned on, the sum of the currents transferred by the fourth transistor NM4, the fifth transistor NM5, and the sixth transistor NM6 is greater than the current transferred by the first transistor NM1, causing the bias voltage V to... bias The bias voltage V is pulled low towards 0 potential. bias With power supply voltage V cp As the difference between them increases, the conduction degree of switch module 2 increases. Therefore, when the power supply voltage V... cp When the voltage drops due to power output, the switch module 2 will not be disconnected instantaneously.
[0048] Continue to refer to Figure 3 Based on the above embodiments, optionally, the switching module 2 includes: a seventh transistor PM7, the first terminal of which is connected to the power supply voltage V. cp The control terminal of the seventh transistor PM7 is connected to the second terminal of the hysteresis decision module 1, and the second terminal of the seventh transistor PM7 is connected to the first terminal of the signal generation module 3; the seventh transistor PM7 is used to determine the bias voltage V. bias and power supply voltage V cp The difference between them can be used to turn the device on or off.
[0049] Among them, the seventh transistor PM7 can be a thick-gate transistor, when the power supply voltage V at the first terminal of the seventh transistor PM7... cp The bias voltage V at the control terminal bias When the voltage difference between the two is greater than the turn-on voltage of the seventh transistor PM7, the seventh transistor PM7 can be turned on.
[0050] Continue to refer to Figure 3 Based on the above embodiments, optionally, the switching module 2 further includes: an eighth transistor NM8 and a ninth transistor NM9, the first terminal of the eighth transistor NM8 is connected to the second terminal of the seventh transistor NM7, the control terminal of the eighth transistor NM8 is grounded, the first terminal of the ninth transistor NM9 is connected to the second terminal of the eighth transistor NM8, the second terminal of the ninth transistor NM9 is grounded, and the control terminal of the ninth transistor NM9 is connected to the first terminal of the ninth transistor NM9; the eighth transistor NM8 and the ninth transistor NM9 are used to adjust the detection voltage.
[0051] Among them, the eighth transistor NM8 can be an N-type low-threshold transistor. After the seventh transistor PM7 is turned on, as the power supply voltage V... cp As the voltage gradually decreases, the conduction level of the seventh transistor PM7 also gradually decreases, causing the current transmitted by the seventh transistor PM7 to gradually decrease. When the current transmitted by the ninth transistor NM9 through the eighth transistor NM8 is greater than the current transmitted by the seventh transistor PM7, the ninth transistor NM9 can detect the voltage V. detpulls down. When the detection voltage V det The control signal EN can convert the high-level square wave signal into a low-level square wave signal when the detection voltage V
[0052] Figure 4 A simulation diagram of the hysteresis comparison circuit is provided for the embodiments of the utility model. In combination with Figure 3 and Figure 4 Optionally, the simulation diagram horizontal coordinate is used for indicating time, and the vertical coordinate is used for indicating voltage.
[0053] When the power supply voltage V cp In the process of rising from 0V to 1.1V, the control signal EN output by the signal generation module 3 is a low-level signal, at this time, the third transistor PM3 is turned on, the fifth transistor NM5 is turned off, the bias voltage V bias and the detection voltage V det are gradually improved.
[0054] When the power supply voltage V cp reaches 1.1V, the seventh transistor PM7 is turned on, the detection voltage V det is instantaneously improved to a voltage close to 1.1V, and the control signal EN output by the signal generation module 3 is also instantaneously raised to a high-level signal, at this time, the third transistor PM3 is turned off, the fifth transistor NM5 is turned on, the bias voltage V bias is reduced from 0.4V to 0.32V, so that the voltage difference between the power supply voltage V cp at the first end of the seventh transistor PM7 and the bias voltage V bias at the control end becomes larger, and the conduction degree of the seventh transistor PM7 increases.
[0055] When the power supply voltage V cp drops after reaching 1.1V, the power supply voltage V cp drops at a speed greater than the speed at which the bias voltage V bias drops, so that the conduction degree of the seventh transistor PM7 gradually decreases. The ninth transistor NM9 can gradually pull down the detection voltage V det , and when the power supply voltage V cp is reduced to 0.9V, the signal generation module 3 reverses the control signal EN to a low-level signal. Therefore, the utility model realizes the voltage hysteresis output of the power supply voltage V cp in the interval of 1.1V to 0.9V. In the whole simulation process, the average current of the hysteresis comparison circuit is only 6pA, so that the hysteresis comparison circuit has lower power consumption.
[0056] It should be noted that the power supply voltage V cp The voltage hysteresis output is described by taking the voltage hysteresis output in the interval of 1.1V to 0.9V as an example, but is not a limitation of the utility model, and in other embodiments, it can also be other voltage intervals, as long as the voltage hysteresis output is used, the hysteresis comparison circuit provided in the embodiments of the utility model can be used.
[0057] Continuing to refer to Figure 3 On the basis of the above embodiments, optionally, the signal generation module 3 comprises: a first inverter 31 and a second inverter 32. The first end of the first inverter 31 is connected with the second end of the switch module 2, the second end of the first inverter 31 is connected with the first end of the second inverter 32, the second end of the second inverter 32 is taken as the second end of the signal generation module 3, and the power supply ends of the first inverter 31 and the second inverter 32 are connected with the power supply voltage V cp ; the first inverter 31 and the second inverter 32 are used for converting the detection voltage V det Into a control signal EN.
[0058] Among them, in order to ensure that the control signal EN can realize effective control of the third transistor PM3 and the fifth transistor NM5, by setting the first inverter 31 and the second inverter 32, the detection voltage V det Can be converted into a square wave signal, through the high and low levels of the square wave signal, the opening and closing control of the third transistor PM3 and the fifth transistor NM5 can be realized. In order to further reduce the power consumption of the hysteresis comparison circuit, the transistors in the first inverter 31 and the second inverter 32 can all use thick gate transistors, and through this setting mode, smaller static and dynamic current power consumption can be realized.
[0059] The embodiments of the utility model also provide a hysteresis comparison system. The system comprises the hysteresis comparison circuit provided in any of the embodiments of the utility model, has the similar beneficial effects of the hysteresis comparison circuit provided in any of the embodiments, and will not be repeated here.
[0060] It should be understood that various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the utility model can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solutions of the utility model can be achieved, and the present document does not limit this.
[0061] The above specific embodiments do not constitute a limitation on the protection scope of the utility model. Those skilled in the art should understand that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement within the spirit and principles of the utility model should be included in the protection scope of the utility model.
Claims
1. A hysteretic comparison circuit, characterized by, include: Hysteresis decision module, the first terminal of which is connected to the power supply voltage to generate a bias voltage; A switching module, wherein a first terminal of the switching module is connected to the power supply voltage, a control terminal of the switching module is connected to a second terminal of the hysteresis decision module, and a third terminal of the switching module is grounded; the switching module is used to output a detection voltage from the second terminal; A signal generation module is provided, wherein a first terminal of the signal generation module is connected to a second terminal of the switching module, a second terminal of the signal generation module is connected to a control terminal of the hysteresis decision module, and a power supply terminal of the signal generation module is connected to the power supply voltage; the signal generation module is used to control the hysteresis decision module to adjust the bias voltage.
2. The hysteresis comparison circuit of claim 1, wherein, The delay decision module includes: The system includes a boost unit and a buck unit. The first terminal of the boost unit is connected to the power supply voltage, and the second terminal of the boost unit is connected to the first terminal of the buck unit. The second terminal of the buck unit is grounded, and the connection point between the second terminal of the boost unit and the first terminal of the buck unit serves as the second terminal of the hysteresis decision module. The control terminals of both the boost unit and the buck unit are connected to the second terminal of the signal generation module. The boost unit is used to boost the bias voltage, and the buck unit is used to reduce the bias voltage.
3. The hysteresis comparison circuit of claim 2, wherein, The boost unit includes: a first transistor, a second transistor, and a third transistor; The first terminals of the first transistor and the second transistor are both connected to the power supply voltage, and the control terminals of the first transistor and the second transistor are both grounded. The second terminal of the first transistor is connected to the first terminal of the step-down unit. The first terminal of the third transistor is connected to the second terminal of the second transistor, and the second terminal of the third transistor is connected to the first terminal of the step-down unit. The control terminal of the third transistor is connected to the second terminal of the signal generation module. The third transistor is used to turn on or off according to the control signal output by the signal generation module.
4. The hysteresis comparison circuit of claim 3, wherein, The step-down unit includes: a fourth transistor, a fifth transistor, and a sixth transistor; The first terminals of the fourth and fifth transistors are both connected to the second terminal of the boost unit, and the second terminals of the fourth and fifth transistors are both connected to the first terminal of the sixth transistor. The control terminal of the fourth transistor is connected to the first terminal of the fourth transistor, and the control terminal of the sixth transistor is connected to the first terminal of the sixth transistor. The second terminal of the sixth transistor is grounded. The control terminal of the fifth transistor is connected to the second terminal of the signal generation module. The fifth transistor is used to turn on or off according to the control signal.
5. The hysteresis comparison circuit of claim 4, wherein, The third transistor, the fourth transistor, the fifth transistor, and the sixth transistor include: a thick-gate transistor.
6. The hysteresis comparison circuit of claim 1, wherein, The switch module comprises a seventh transistor, a first end of the seventh transistor is connected with the power supply voltage, a control end of the seventh transistor is connected with a second end of the hysteresis judgment module, and a second end of the seventh transistor is connected with a first end of the signal generation module; the seventh transistor is used for turning on or turning off according to a difference between the bias voltage and the power supply voltage.
7. The hysteresis comparison circuit of claim 6, wherein, The switch module further comprises an eighth transistor and a ninth transistor, a first end of the eighth transistor is connected with the second end of the seventh transistor, a control end of the eighth transistor is grounded, a first end of the ninth transistor is connected with a second end of the eighth transistor, a second end of the ninth transistor is grounded, and a control end of the ninth transistor is connected with the first end of the ninth transistor; the eighth transistor and the ninth transistor are used for adjusting the detection voltage.
8. The hysteresis comparison circuit of claim 1, wherein, The signal generation module comprises a first inverter and a second inverter; a first end of the first inverter is connected with a second end of the switch module, a second end of the first inverter is connected with a first end of the second inverter, a second end of the second inverter serves as a second end of the signal generation module, and power supply ends of the first inverter and the second inverter are connected with the power supply voltage; the first inverter and the second inverter are used for converting the detection voltage into a control signal.
9. The hysteresis comparison circuit of claim 8, wherein, The control signal comprises a square wave signal.
10. A hysteretic comparison system characterized by, The hysteresis comparison circuit comprises the hysteresis comparison circuit according to any one of claims 1-9. The hysteresis comparison circuit comprises the hysteresis comparison circuit according to any one of claims 1-9.