Vapor deposition equipment

Abstract

The utility model provides vapor deposition equipment. The vapor deposition equipment comprises an inner bearing table and an annular wall, the inner bearing table comprises an inner cylinder and a bearing face sealing one end of the inner cylinder, the annular wall is arranged around the bearing face, and a plurality of air inlet channels and exhaust channels opposite to the air inlet channels are formed in the annular wall. According to the reaction chamber disclosed by the utility model, the plurality of gas inlet channels are arranged around the bearing surface for bearing the sample, so that the flow of the reaction gas entering the reaction chamber can be finely controlled, and the reaction gas can uniformly enter the reaction chamber, so that a formed film can uniformly grow.

Description

Technical Field

[0001] This utility model relates to the field of thin film deposition equipment technology, specifically a vapor deposition equipment. Background Technology

[0002] The research boom in two-dimensional materials began with the successful preparation of graphene, which possesses excellent properties such as high carrier mobility, high mechanical strength, and broad planar optical absorption. However, graphene's zero band gap greatly limits its applications in electronics and optoelectronics. As an important member of the two-dimensional materials family, two-dimensional transition metal dichalcogenides (TMDs) possess tunable band gaps, good environmental stability, graphene-like structures, large specific surface areas, strong spin-orbit coupling, valence band splitting, high nonlinear magnetic susceptibility, and excellent electrical and photoelectric properties. This makes monolayer TMDs extremely promising for applications in semiconductor electronics, optoelectronics, spintronics, valleytronics, photodetectors, and catalysis. Therefore, they are considered the most promising two-dimensional materials to replace graphene in the fields of electronics and optoelectronics.

[0003] Chemical vapor deposition (CVD), as a highly efficient and low-cost method, not only allows for controllable material size but also morphology through adjustments to CVD equipment parameters, thus becoming a primary means of synthesizing two-dimensional transition metal sulfide thin films. However, achieving uniform growth of large-sized two-dimensional transition metal sulfide wafers mainly requires controlling the delivery of reactant gases. Existing CVD equipment cannot achieve uniform gas flow, making it difficult to achieve uniform growth of large-sized two-dimensional transition metal sulfide wafers. Utility Model Content

[0004] The purpose of this invention is to provide a vapor deposition device that can achieve uniform gas flow of the reaction gas.

[0005] To achieve the above objectives, the present invention proposes the following technical solution: a vapor deposition apparatus, comprising: an inner support stage and an annular wall; the inner support stage includes an inner cylinder and a support surface that closes one end of the inner cylinder, the annular wall is arranged around the support surface, and the annular wall is provided with a plurality of air inlet channels and an exhaust channel opposite to the plurality of air inlet channels.

[0006] Furthermore, in this utility model, according to the vapor deposition apparatus of claim 1, the plurality of air inlet channels are characterized in that there are at least two sets, wherein each set of air inlet channels allows air to enter independently.

[0007] Furthermore, in this utility model, the vapor deposition equipment further includes: an outer support stage, the outer support stage including a first outer cylinder and a second outer cylinder connected to one end of the first outer cylinder, the inner diameter of the second outer cylinder being larger than the inner diameter of the first outer cylinder, thereby forming an annular placement surface at the connection between the second outer cylinder and the first outer cylinder;

[0008] The inner cylinder is placed inside the first outer cylinder, and the bearing surface is adjacent to the annular placement surface. The annular wall is placed on the annular placement surface to surround the bearing surface.

[0009] Furthermore, in this invention, the bearing surface extends beyond the first outer cylinder, so that the annular placement surface is located between the bearing surface and one end of the first outer cylinder.

[0010] Furthermore, in this invention, the inner support platform is rotatable relative to the outer support platform.

[0011] Furthermore, in this invention, the vapor deposition apparatus further includes a heating device disposed within the inner cylinder and adjacent to the bearing surface.

[0012] Furthermore, in this invention, the inner support platform is rotatable relative to the heating device.

[0013] Furthermore, in this invention, the vapor deposition apparatus further includes a viewing window that penetrates the second outer cylinder and the annular wall.

[0014] Furthermore, in this invention, the inner support platform is rotated by a pneumatic drive.

[0015] Beneficial effects: The technical solution of this application has the following technical effects:

[0016] This invention, by setting several air inlet channels around the bearing surface, can precisely control the flow rate of the reaction gas entering the reaction chamber and can achieve uniform entry of the reaction gas into the reaction chamber, thereby enabling the formed film to grow uniformly.

[0017] It should be understood that all combinations of the foregoing concepts and the additional concepts described in more detail below can be considered as part of the utility model subject matter of this disclosure, provided that such concepts do not contradict each other.

[0018] The foregoing and other aspects, embodiments, and features of the present invention will be more fully understood from the following description in conjunction with the accompanying drawings. Other additional aspects of the present invention, such as features and / or beneficial effects of exemplary embodiments, will become apparent from the following description or may be learned through practice of specific embodiments according to the teachings of the present invention. Attached Figure Description

[0019] The accompanying drawings are not intended to be drawn to scale. In the drawings, each identical or nearly identical component shown in the various figures may be denoted by the same reference numeral. For clarity, not every component is labeled in each figure. Embodiments of various aspects of the present invention will now be described by way of example and with reference to the accompanying drawings, wherein:

[0020] Figure 1 This is a three-dimensional schematic diagram of a vapor deposition apparatus according to an embodiment of the present invention;

[0021] Figure 2 This is a perspective view of a vapor deposition apparatus for removing a sealing cap according to an embodiment of the present invention;

[0022] Figure 3 yes Figure 2 A top view of the vapor deposition apparatus shown;

[0023] Figure 4 It is along Figure 3 The cross-sectional view of section line BB in the diagram.

[0024] In the figure, the meanings of the reference numerals are as follows: reaction chamber 100; sealing cover 200; first air inlet pipe 310;

[0025] Second intake pipe 320; exhaust pipe 400; first viewing window 510; second viewing window 520; inner support platform 110; inner cylinder 111; support surface 112; annular wall 120; intake channel 121; outer support platform 130; first outer cylinder 131; second outer cylinder 132; annular placement surface 133; heating device 140. Detailed Implementation

[0026] To better understand the technical content of this utility model, specific embodiments are described below in conjunction with the accompanying drawings. Various aspects of this utility model are described in this disclosure with reference to the accompanying drawings, which illustrate numerous illustrative embodiments. The embodiments of this disclosure are not necessarily defined to include all aspects of this utility model. It should be understood that the various concepts and embodiments described above, as well as those described in more detail below, can be implemented in any of many ways, because the concepts and embodiments disclosed in this utility model are not limited to any particular implementation. Furthermore, some aspects of this utility model can be used alone or in any suitable combination with other aspects disclosed in this utility model.

[0027] Figure 1 This is a three-dimensional schematic diagram of a vapor deposition apparatus according to an embodiment of the present invention.

[0028] Reference Figure 1 According to an embodiment of the present invention, the vapor deposition apparatus may be, for example, a chemical vapor deposition apparatus, which includes: a reaction chamber 100 and a sealing cap 200 covering the reaction chamber; wherein, a reaction chamber is formed between the reaction chamber 100 and the sealing cap 200, which serves as the reaction site for performing chemical vapor deposition of thin films (e.g., two-dimensional transition metal sulfide (e.g., molybdenum disulfide, MoS2) films).

[0029] Furthermore, the chemical vapor deposition apparatus further includes: a first inlet pipe 310, a second inlet pipe 320, an exhaust pipe 400, and a first viewing window 510 and a second viewing window 520. Here, two inlet pipes and one exhaust pipe are shown, but the present invention is not limited thereto; the number of inlet and exhaust pipes can be increased or decreased according to actual needs. Similarly, the present invention is not limited to the number of viewing windows shown here; the number of viewing windows can be reasonably set according to the observation angle, etc.

[0030] The first air inlet pipe 310, the second air inlet pipe 320, the exhaust pipe 400, and the first viewing window 510 and the second viewing window 520 are all connected to the reaction chamber. The first air inlet pipe 310 and the second air inlet pipe 320 are used to supply reaction gases to the reaction chamber, while the exhaust pipe 400 is used to discharge waste gases generated during thin film deposition from the reaction chamber. The first viewing window 510 and the second viewing window 520 are provided to allow the user to observe the thin film deposition process within the reaction chamber, thereby enabling better control of the thin film deposition process.

[0031] Figure 2 This is a perspective view of a vapor deposition apparatus for removing a sealing cap according to an embodiment of the present invention. Figure 3 yes Figure 2 A top view of the vapor deposition apparatus is shown. Figure 4 It is along Figure 3 The cross-sectional view of section line BB in the diagram.

[0032] Reference Figures 2 to 4 The reaction chamber 100 includes an inner support stage 110 and an annular wall 120. The inner support stage 110 includes an inner cylinder (cylindrical in shape) 111 and a support surface 112 that closes one end (an open end) of the inner cylinder 111. The support surface 112 is used to support samples such as substrates. The annular wall 120 surrounds the support surface 112 and has a plurality of air inlet channels 121 and an exhaust channel (not shown) opposite to the plurality of air inlet channels 121.

[0033] Here, several air intake channels 121 are divided into two groups corresponding to the first air intake pipe 310 and the second air intake pipe 320, but this invention is not limited to this. One group of air intake channels 121 connects to the first air intake pipe 310, while the other group of air intake channels 121 connects to the second air intake pipe 320. The first air intake pipe 310 and the second air intake pipe 320 independently introduce reaction gases; for example, the first air intake pipe 310 introduces molybdenum source gas, while the second air intake pipe 320 introduces sulfur source gas. Correspondingly, the group of air intake channels 121 connected to the first air intake pipe 310 guides the molybdenum source gas into the reaction chamber, while the other group of air intake channels 121 connected to the second air intake pipe 320 guides the sulfur source gas into the reaction chamber. Therefore, the group of air intake channels 121 connected to the first air intake pipe 310 and the other group of air intake channels 121 connected to the second air intake pipe 320 also independently introduce reaction gases. The exhaust passage is connected to the exhaust pipe 400 to discharge the waste gas generated in the reaction chamber.

[0034] Furthermore, the air intake channel 121 can be a pipe installed within the annular wall 120, or it can be a channel directly formed within the annular wall. This invention is not limited to a specific method, as long as gas can be introduced. In addition, one set of air intake channels 121 connecting the first air intake pipe 310 is evenly distributed, and another set of air intake channels 121 connecting the second air intake pipe 320 is also evenly distributed. However, this invention is not limited to this; for example, all air intake channels 121 can be evenly distributed.

[0035] Furthermore, the reaction chamber 100 also includes an outer support platform 130, which includes a first outer cylinder 131 and a second outer cylinder 132 connected to one end of the first outer cylinder 131. The inner diameter of the second outer cylinder 132 is larger than the inner diameter of the first outer cylinder 131, so that the connection between the second outer cylinder 132 and the first outer cylinder 131 forms an annular placement surface 133. The inner cylinder 111 is placed inside the first outer cylinder 131, and the support surface 112 is adjacent to the annular placement surface 133, while the annular wall 120 is placed on the annular placement surface 133 to surround the support surface 112.

[0036] Furthermore, the bearing surface 112 extends beyond the first outer cylinder 131, so that the annular placement surface 133 is located between the bearing surface 112 and one end of the first outer cylinder 131.

[0037] Furthermore, the inner support platform 110 can be configured to rotate relative to the outer support platform 130. As an example, the inner support platform 110 can be pneumatically driven to rotate, but the present invention is not limited thereto.

[0038] In addition, the reaction chamber 100 also includes a heating device 140. The heating device 140 is disposed inside the inner cylinder 111 and adjacent to the bearing surface 112. The inner bearing stage 110 is rotatable relative to the heating device 140, thereby enabling more uniform heating of the sample on the bearing surface 112.

[0039] According to another embodiment of the present invention, a method for preparing a two-dimensional transition metal sulfide thin film is also provided, which is performed by the above-described vapor deposition equipment. The preparation method will be described using the preparation of MoS2 as an example.

[0040] Specifically, the substrate is fixed on the support surface 112, and then the sealing cover 200 is sealed and the reaction chamber is evacuated. Then, molybdenum source gas and sulfur source gas are introduced through the first gas inlet pipe 310 and the second gas inlet pipe 320 respectively, and the substrate on the support surface 112 is heated by the heating device 140 at the same time. Finally, the molybdenum source gas and sulfur source gas react to deposit a MoS2 thin film on the substrate.

[0041] In summary, the vapor deposition apparatus and the method for preparing two-dimensional transition metal sulfide thin films according to the embodiments of this utility model can precisely control the flow rate of the reaction gas entering the reaction chamber by setting several air inlet channels around the bearing surface, and can achieve uniform entry of the reaction gas into the reaction chamber, thereby enabling the formed thin film to grow uniformly.

[0042] Although the present invention has been disclosed above with reference to preferred embodiments, it is not intended to limit the present invention. Those skilled in the art to which this invention pertains can make various modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of this invention shall be determined by the claims.

Claims

1. A vapor deposition apparatus, characterized in that, The gas phase deposition device comprises an inner bearing platform (110) and a ring wall (120); the inner bearing platform (110) comprises an inner cylinder (111) and a bearing surface (112) closing one end of the inner cylinder (111), and the ring wall (120) is arranged around the bearing surface (112); a plurality of gas inlet channels (121) and a gas outlet channel opposite to the plurality of gas inlet channels (121) are arranged on the ring wall (120). The plurality of gas inlet channels (121) are at least two groups, and each group of gas inlet channels (121) independently inlets gas.

2. A vapour deposition apparatus as claimed in claim 1, characterised in that: The gas phase deposition device further comprises an outer bearing platform (130), wherein the outer bearing platform (130) comprises a first outer cylinder (131) and a second outer cylinder (132) connected to one end of the first outer cylinder (131); the inner diameter of the second outer cylinder (132) is greater than the inner diameter of the first outer cylinder (131), so that the connection part of the second outer cylinder (132) and the first outer cylinder (131) forms a ring-shaped placement surface (133).

3. A vapour deposition apparatus as claimed in claim 1 or 2, characterised in that: The inner cylinder (111) is arranged in the first outer cylinder (131), and the bearing surface (112) is adjacent to the ring-shaped placement surface (133); the ring wall (120) is arranged on the ring-shaped placement surface (133) to surround the bearing surface (112). The bearing surface (112) extends out of the first outer cylinder (131) so that the ring-shaped placement surface (133) is located between the bearing surface (112) and one end of the first outer cylinder (131).

4. A vapour deposition apparatus as claimed in claim 3, characterised in that: The inner bearing platform (110) can rotate relative to the outer bearing platform (130).

5. A vapour deposition apparatus as claimed in claim 3, characterised in that: The gas phase deposition device further comprises a heating device (140) arranged in the inner cylinder (111) and adjacent to the bearing surface (112).

6. A vapour deposition apparatus as claimed in claim 1, characterised in that: The inner bearing platform (110) can rotate relative to the heating device (140).

7. A vapour deposition apparatus as claimed in claim 6, characterised in that: The gas phase deposition device further comprises a window penetrating the second outer cylinder (132) and the ring wall (120).

8. A vapour deposition apparatus as claimed in claim 3, characterised in that: The inner bearing platform (110) is driven to rotate by a pneumatic driving mode.

9. A vapour deposition apparatus as claimed in claim 1, characterised in that: ​

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