Inverted LED module lamp bead
By using flip-chip LED module design, P-type gallium hydride and N-type gallium nitride semiconductor layers and quantum dot light-emitting materials, the problems of heat dissipation, uneven current distribution and material interface of conventional LED chips are solved, achieving high-efficiency light emission and improved stability.
Patent Information
- Application Number
- CN202423103183.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-16
- Publication Date
- 2026-01-06
- Estimated Expiration
- 2034-12-16
AI Technical Summary
Standard LED chips suffer from limited heat dissipation, uneven current distribution, and material interface issues, which affect luminous efficiency, lifespan, and stability.
It adopts a flip-chip structure, uses P-type gallium hydride and N-type gallium nitride semiconductor layers, combines quantum dot light-emitting materials and transparent Si chip substrates, optimizes current distribution and heat dissipation, and improves material interface bonding through a transition layer.
It improves luminous efficiency and color purity, optimizes thermal management, enhances current distribution uniformity and material stability, improves product compactness and reliability, and reduces production costs.
Smart Images
Figure CN223772430U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of LED lights, and more particularly to a flip-chip LED module lamp bead. Background Technology
[0002] In the early stages of LED technology development, upright LED chips were the mainstream design. The structure of an upright LED chip typically includes a substrate, an N-type semiconductor layer, a light-emitting layer, and a P-type semiconductor layer, with electrodes positioned above or to the sides of the P-type and N-type semiconductor layers, respectively. However, with the continuous advancement of LED technology and the increasing demands of applications (as shown in the instruction manual...), Figure 2 As shown in the image, conventional LED chips have gradually revealed some significant drawbacks:
[0003] Limited heat dissipation performance:
[0004] The heat dissipation path of a standard LED chip is relatively long and is limited by the electrode layout and packaging structure, making it difficult to dissipate heat effectively. This causes the LED chip temperature to rise during operation, which in turn affects luminous efficiency and lifespan.
[0005] Uneven current distribution:
[0006] The electrode layout of a standard LED chip often results in uneven current distribution on the chip surface, especially in large-size chips. This uneven current distribution can lead to localized overheating and performance degradation, affecting the uniformity and stability of LED light emission.
[0007] Material interface issues:
[0008] During the manufacturing process of LED chips, lattice mismatch and stress problems often exist at the interface between different semiconductor materials. These problems can lead to defects and performance degradation at the interface, affecting the luminous efficiency and reliability of the LED.
[0009] Therefore, it is necessary to provide a new flip-chip LED module lamp bead to solve the above-mentioned technical problems. Utility Model Content
[0010] To solve the above-mentioned technical problems, this utility model provides a flip-chip LED module lamp bead.
[0011] The flip-chip LED module lamp beads provided by this utility model include:
[0012] A base, with P and N electrodes mounted on its top.
[0013] A P-type semiconductor layer is provided at the top of the base, and the P-type semiconductor layer is P-type gallium hydride;
[0014] A light-emitting layer is provided on the top of the P-type semiconductor layer;
[0015] An N-type semiconductor light-emitting layer is mounted on top of the light-emitting layer, and the N-type semiconductor light-emitting layer is N-type gallium nitride;
[0016] The substrate layer is located at the top of the N-type semiconductor light-emitting layer.
[0017] Preferably, the substrate is a transparent Si chip material.
[0018] Preferably, the base, P-type semiconductor layer, light-emitting layer, N-type semiconductor light-emitting layer, and substrate layer are packaged together to form an integral structure. The base serves as a support structure, with P-electrodes and N-electrodes respectively disposed at the top of the base for connection to external circuits. The P-type semiconductor layer is made of P-type gallium hydride material and is electrically connected to the base. The light-emitting layer is disposed on top of the P-type semiconductor layer and emits light under the influence of current. The N-type semiconductor light-emitting layer is made of N-type gallium nitride material and is disposed on top of the light-emitting layer, forming the core structure of the light-emitting diode together with the P-type semiconductor layer and the light-emitting layer. The substrate layer is a transparent Si chip material and is disposed on top of the N-type semiconductor light-emitting layer, serving both protective and light-transmitting functions.
[0019] Preferably, the P-electrode and N-electrode are arranged symmetrically at the top of the base to optimize current distribution and heat dissipation.
[0020] Preferably, the light-emitting layer is made of quantum dot light-emitting material to improve luminous efficiency and color purity.
[0021] Preferably, the bottom of the base is also provided with a heat dissipation layer for effectively dissipating the heat generated by the LED module beads during operation.
[0022] Preferably, at least one transition layer is provided between the P-type semiconductor layer and the N-type semiconductor light-emitting layer, and between the light-emitting layer and the N-type semiconductor light-emitting layer, to improve the interface bonding between different materials, reduce lattice mismatch, and improve the stability and luminous efficiency of the LED module beads.
[0023] Compared with related technologies, the flip-chip LED module lamp beads provided by this utility model have the following beneficial effects:
[0024] Improved luminous efficiency and color purity:
[0025] By introducing quantum dot luminescent materials, flip-chip LED module beads have significantly improved luminous efficiency and color purity; quantum dot materials have narrow-band emission characteristics, which can produce purer colors while reducing energy loss and improving overall luminous performance;
[0026] Optimization of thermal management performance:
[0027] The substrate layer uses a transparent material with good heat dissipation (such as Si, Ge, Cu, etc.) and a heat dissipation layer is added, which effectively improves the thermal management performance of the LED module chips. This helps to reduce the temperature of the LED during operation, extend its service life, and reduce the performance degradation caused by overheating.
[0028] Improvement of material interface bonding:
[0029] The introduction of the transition layer improves the interfacial bonding between different semiconductor materials and reduces lattice mismatch, thereby improving the stability and luminous efficiency of LED module chips; this helps to reduce performance loss caused by material mismatch and improve overall reliability.
[0030] Uniformity of current distribution:
[0031] The P and N electrodes are arranged symmetrically on the top of the base, which optimizes the current distribution and reduces the non-uniformity of the current density. This helps to reduce local overheating caused by current concentration and improves the uniform light emission performance and long-term stability of the LED module beads.
[0032] Overall structural compactness and reliability:
[0033] Flip-chip LED module beads are packaged to combine the various layers into a single structure; this design not only improves the compactness of the product, but also enhances its resistance to external environment and mechanical stress, thereby improving the product's reliability and durability.
[0034] Manufacturing flexibility and cost-effectiveness:
[0035] By adopting advanced semiconductor manufacturing technologies and materials, the manufacturing process of flip-chip LED module lamp beads is more flexible and controllable, while reducing production costs; this helps to promote the popularization and development of LED lighting and display technologies, and provide the market with products that offer higher cost performance. Attached Figure Description
[0036] Figure 1 A schematic diagram of the structure of the flip-chip LED module provided by this utility model;
[0037] Figure 2 This is a schematic diagram of the structure of an existing standard-mount LED module lamp bead.
[0038] The numbers in the diagram are: 1. Base; 11. P electrode; 12. N electrode; 2. P-type semiconductor layer; 3. Light-emitting layer; 4. N-type semiconductor light-emitting layer; 5. Substrate layer. Detailed Implementation
[0039] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present utility model and are not intended to limit the present utility model.
[0040] The specific implementation of this utility model will be described in detail below with reference to specific embodiments.
[0041] Please see Figure 1-2 A flip-chip LED module lamp bead, wherein the flip-chip LED The module LED includes: a base 1, a P-type semiconductor layer 2, a light-emitting layer 3, an N-type semiconductor light-emitting layer 4, and a substrate layer 5. A P-electrode 11 and an N-electrode 12 are respectively mounted on the top of the base 1. The top of the base 1 has a P-type semiconductor layer 2, which is P-type gallium hydride. The top of the P-type semiconductor layer 2 has a light-emitting layer 3, and the top of the light-emitting layer 3 has an N-type semiconductor light-emitting layer 4, which is N-type gallium hydride. The top of the N-type semiconductor light-emitting layer 4 has a substrate layer 5, which is a transparent material with good heat dissipation (such as Si, Ge, Cu, etc.). The base 1, P-type semiconductor layer 2, light-emitting layer 3, N-type semiconductor light-emitting layer 4, and substrate layer 5 are combined together in a package to form an integral structure. The base 1 serves as a support structure. The P-electrode 11 and N-electrode 12 are respectively located on the top of the base 1 for connection to external circuits. The P-type semiconductor layer 2 is made of P-type gallium hydride and is electrically connected to the base 1. The light-emitting layer 3... The base 1 is placed on the P-type semiconductor layer 2 for emitting light under the action of current; the N-type semiconductor light-emitting layer 4 is made of N-type gallium nitride material and is placed on the light-emitting layer 3, together with the P-type semiconductor layer 2 and the light-emitting layer 3 to form the core structure of the light-emitting diode; the substrate layer 5 is a transparent Si chip material and is placed on the N-type semiconductor light-emitting layer 4 to protect and transmit light; the P electrode 11 and N electrode 12 are arranged symmetrically at the top of the base 1 to optimize current distribution and heat dissipation; the light-emitting layer 3 is made of quantum dot light-emitting material to improve luminous efficiency and color purity; the bottom of the base 1 is also provided with a heat dissipation layer to effectively dissipate the heat generated by the LED module beads during operation; at least one transition layer is provided between the P-type semiconductor layer 2 and the N-type semiconductor light-emitting layer 4, and between the light-emitting layer 3 and the N-type semiconductor light-emitting layer 4, to improve the interface bonding between different materials, reduce lattice mismatch, and improve the stability and luminous efficiency of the LED module beads.
[0042] It should be noted that:
[0043] Quantum dot luminescent materials have been introduced, which are advanced luminescent materials that can significantly improve the luminous efficiency and color purity of LEDs;
[0044] A heat dissipation layer has been added to improve the thermal management performance of the LED module chips and extend their lifespan;
[0045] The concept of a transition layer is introduced, which can improve the interfacial bonding between different semiconductor materials, reduce performance degradation caused by lattice mismatch, and thus improve the stability and luminous efficiency of LED module chips. This is an important technology in LED manufacturing, which helps to improve the overall performance of the product.
[0046] The working principle of the flip-chip LED module provided by this utility model is as follows:
[0047] The working principle of flip-chip LED module lamp beads is based on the electroluminescence effect of PN junction; when the external power supply is connected to the LED module lamp beads through P electrode 11 and N electrode 12, the current flows in from P electrode 11, passes through P-type semiconductor layer 2, enters light-emitting layer 3, then passes through N-type semiconductor light-emitting layer 4, and finally flows out from N electrode 12, forming a complete current loop.
[0048] In this current loop, there are transition layers between the P-type semiconductor layer 2 and the N-type semiconductor light-emitting layer 4, and between the light-emitting layer 3 and the N-type semiconductor light-emitting layer 4. These transition layers improve the interfacial bonding between different semiconductor materials, reduce lattice mismatch, thereby ensuring the smooth flow of current between material interfaces and reducing energy loss caused by material mismatch.
[0049] When current passes through the light-emitting layer 3, the quantum dot light-emitting material in this layer is excited, and electrons jump from a low energy level to a high energy level, forming an excited state. Subsequently, when these excited electrons return to the low energy level, they release energy, which is radiated out in the form of light, forming visible light. Because quantum dot light-emitting materials have excellent luminous efficiency and color purity, they can significantly improve the luminous performance and color performance of LEDs.
[0050] Meanwhile, the substrate layer 5 above the N-type semiconductor light-emitting layer 4 is made of transparent Si chip material, which has good light transmittance and heat dissipation, ensuring that the emitted light passes through smoothly and radiates outwards, while effectively dissipating the heat generated by the LED module beads during operation, thus improving the thermal management performance and lifespan of the LED module beads.
[0051] In addition, the heat dissipation layer at the bottom of the base 1 further enhances the heat dissipation effect of the LED module beads, ensuring the stable operation of the LED module beads in high-temperature environments.
[0052] The above description is merely an embodiment of this utility model and does not limit the patent scope of this utility model. Any equivalent structural or procedural transformations made based on the content of this utility model specification and drawings, or direct or indirect applications in other related technical fields, are similarly included within the patent protection scope of this utility model.
Claims
1. An inverted LED module lamp bead, characterized in that, The application relates to a LED module lamp bead, which comprises the following parts: a base (1), the top end of the base (1) is respectively provided with a P electrode (11) and an N electrode (12); a P-type semiconductor layer (2), the top end of the base (1) is provided with the P-type semiconductor layer (2), and the P-type semiconductor layer (2) is P-type gallium hydride; a light-emitting layer (3), the top end of the P-type semiconductor layer (2) is provided with the light-emitting layer (3); an N-type semiconductor light-emitting layer (4), the top end of the light-emitting layer (3) is provided with the N-type semiconductor light-emitting layer (4), and the N-type semiconductor light-emitting layer (4) is N-type gallium ammine; a substrate layer (5), the top end of the N-type semiconductor light-emitting layer (4) is provided with the substrate layer (5).
2. The inverted LED module lamp bead according to claim 1, characterized in that, The substrate layer (5) is transparent Si chip material.
3. The inverted LED module lamp bead according to claim 1, characterized in that, The base (1), the P-type semiconductor layer (2), the light-emitting layer (3), the N-type semiconductor light-emitting layer (4) and the substrate layer (5) are combined together in a packaging mode to form an integral structure.
4. The inverted LED module lamp bead according to claim 1, characterized in that, The P electrode (11) and the N electrode (12) are arranged in a symmetrical mode on the top end of the base (1).
5. The flip LED module lamp bead according to claim 1, characterized in that, The light-emitting layer (3) is made of quantum dot light-emitting material.
6. The inverted LED module lamp bead according to claim 1, characterized in that, The base (1) is further provided with a heat dissipation layer for effectively dissipating the heat generated by the LED module lamp bead during working.
7. The flip LED module lamp bead according to claim 1, characterized in that, At least one transition layer is arranged between the P-type semiconductor layer (2) and the N-type semiconductor light-emitting layer (4) and between the light-emitting layer (3) and the N-type semiconductor light-emitting layer (4) respectively, so as to improve the interface combination between different materials and reduce lattice mismatch.