Isolation structure and chemical vapor deposition device

Abstract

The utility model provides an isolation structure and a chemical vapor deposition device, the isolation structure is arranged in a reaction cavity of the vapor deposition device, a heating device is arranged in the reaction cavity, the reaction cavity comprises a first annular cover, a second annular cover and a third annular cover, the first annular cover comprises a first space used for accommodating the heating device, and the second annular cover comprises a second space used for accommodating the heating device; the second annular cover is arranged on the first annular cover in a sleeving manner; the ring width of the second annular cover is larger than that of the first annular cover, so that a cavity is formed between the first annular cover and the second annular cover. The isolation structure blocks a flowing path of reaction gas in the reaction cavity, and corrosion of the reaction gas to the radio frequency induction coil and the bottom wall of the reaction cavity is reduced; and meanwhile, the radiation heat dissipation of the wafer tray on the radio frequency induction coil is isolated, so that the temperature influence of thermal radiation on the radio frequency induction coil is weakened, and the uniformity of thin film deposition is improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to semiconductor equipment technical field, especially a kind of isolation structure and chemical vapor deposition device. BACKGROUND

[0002] Chemical vapor deposition (CVD) process is to pass into reaction cavity process gas containing the element of constituting thin film and other gas required by reaction, utilize high temperature, plasma etc. Excitation means to promote gas to occur chemical reaction on wafer surface, and then make reactant atom deposit on wafer surface to form thin film technology.

[0003] Because gas occurs chemical reaction after forming excess solid by-product deposit in reaction cavity interior, to improve production efficiency and thin film growth uniformity, clean gas (such as chlorine etc.) is passed into reaction cavity to clean.In the current chemical deposition device, to avoid process gas and / or clean gas to cause pollution and corrosion to heating device (such as radio frequency induction coil), isolation plate is set between radio frequency induction coil and wafer tray to prevent process gas and / or clean gas from damaging heating device.

[0004] But because there is certain gap between the outside of isolation plate and flow-limiting ring, there is certain gap between the inside of isolation plate and rotating shaft, leading to process gas and / or clean gas to flow from gap to the lower of isolation plate, to cause certain degree of corrosion to the bottom wall of reaction cavity and radio frequency induction coil, easy to cause radio frequency induction coil and reaction cavity bottom wall to leak water;At the same time, it also can affect the smoothness of radio frequency induction coil, cause the power difference between radio frequency induction coil to be larger, leading to uneven heating, and then cause thin film deposition to be uneven, reduce product yield. UTILITY MODEL CONTENTS

[0005] The utility model aims at providing a kind of isolation structure and chemical vapor deposition device, to realize the protection isolation of radio frequency induction coil, prevent radio frequency induction coil from being corroded by process gas and / or clean gas and the radiation heat dissipation of wafer tray, it is favorable to improve the uniform heating of radio frequency induction coil, and then improve the uniformity of thin film deposition.

[0006] To realize the above-mentioned purpose, the utility model provides a kind of isolation structure, set in the reaction cavity of vapor deposition device, the reaction cavity is equipped with heating device, the isolation structure includes: first annular cover, it includes the first space for accommodating the heating device;Second annular cover, it is sleeved on the first annular cover;The ring width of the second annular cover is greater than the ring width of the first annular cover, so that the cavity is formed between the first annular cover and the second annular cover.

[0007] Optionally, the cavity is connected with heat conduction source, for passing into heat conduction medium in the cavity.

[0008] Optionally, the first annular cover comprises a first annular plate at the top and first sidewalls extending downward along the inner side and the outer side of the first annular plate, the first annular plate and the first sidewalls enclosing the first space; the second annular cover comprises a second annular plate at the top and second sidewalls extending downward along the inner side and the outer side of the second annular plate, the second annular plate and the second sidewalls enclosing the second space to accommodate the first annular cover.

[0009] Optionally, the cavity is in communication with at least one of the first space and the reaction cavity.

[0010] Optionally, a support plate is arranged below the first annular cover and the second annular cover, and the first annular cover, the second annular cover and the support plate jointly enclose the cavity.

[0011] Optionally, at least one of the first sidewalls and the second sidewalls has a gap with the support plate.

[0012] Optionally, the cavity is a sealed space relative to the first space and the reaction cavity.

[0013] Optionally, a circulating heat-conducting medium is arranged in the cavity.

[0014] Optionally, a support plate is arranged below the first annular cover and the second annular cover, and the first annular cover, the second annular cover and the support plate jointly enclose the sealed cavity.

[0015] Optionally, a first sealing member is arranged between the support plate and the bottom wall of the reaction cavity.

[0016] Optionally, the first annular cover and the second annular cover are made of a temperature-resistant non-metallic material.

[0017] Optionally, the first annular cover and the second annular cover are made of quartz or zirconia.

[0018] Optionally, at least one of the first annular cover and the second annular cover is non-transparent.

[0019] The utility model also provides a chemical vapor deposition device, it includes: reaction cavity;Wafer tray, it is arranged in reaction cavity, is used for supporting wafer;

[0020] Heating device, it is arranged below the wafer tray, the heating device is radio frequency induction coil, is used for heating wafer tray;The wafer tray with the heating device between being provided with the isolation structure as mentioned above, the heating device is located in the first space of the first annular cover.

[0021] Optionally, the bottom wall of the reaction cavity is provided with a gas inlet and a gas outlet which communicate with the first space, the gas inlet is used for introducing purge gas into the first space, and the gas outlet is used for discharging the purge gas in the first space.

[0022] Optionally, the chemical vapor deposition device further comprises pressure measuring devices which are respectively arranged in the first space and the reaction cavity, and are used for monitoring the pressure in the first space and the pressure in the reaction cavity.

[0023] Optionally, the chemical vapor deposition device further comprises an exhaust ring which is arranged around the isolation structure.

[0024] Compared with the prior art, the technical scheme of the utility model has at least the following advantages: the double-layer isolation structure formed by the first annular cover and the second annular cover surrounds the radio frequency induction coil, blocks the flow path of the reaction gas in the reaction cavity diffusing to the radio frequency induction coil, and reduces the corrosion of the gas on the radio frequency induction coil and the bottom wall of the reaction cavity. Meanwhile, the double-layer annular cover containing the cavity isolates the radiation heat dissipation of the wafer tray to the radio frequency induction coil, not only weakens the temperature influence of the heat radiation of the wafer tray on the radio frequency induction coil, but also realizes the heat preservation of the wafer tray, which is beneficial to improving the uniformity of film deposition.

[0025] Further, by introducing the heat-conducting medium into the cavity, the heat-conducting medium can take away the heat of the first annular cover and the second annular cover, thereby reducing the temperature of the isolation structure, ensuring that the isolation structure works in a safe temperature range, effectively preventing the isolation structure from being damaged due to deformation, and further ensuring the stable work of the radio frequency induction coil; meanwhile, the temperature of the wafer tray can be quickly reduced, so as to be suitable for different reaction temperatures corresponding to different process requirements of MOCVD, thereby improving the production efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0026] Figure 1 It is a structural schematic view of a chemical vapor deposition device;

[0027] Figure 2 It is a structural schematic view of a chemical vapor deposition device provided by the embodiment of the utility model;

[0028] Figure 3 It is a schematic view of an isolation structure in a chemical vapor deposition device provided by the embodiment of the utility model;

[0029] Figure 4 It is a schematic view of another isolation structure in a chemical vapor deposition device provided by the embodiment of the utility model;

[0030] Figure 5 It is a partial sectional plan view of a chemical vapor deposition device provided by the embodiment of the utility model. DETAILED DESCRIPTION

[0031] The technical solutions, structural features, achieved purposes and effects of the embodiments of the present application will be described in detail below with reference to the drawings of the embodiments of the present application.

[0032] It should be noted that the drawings are very simplified and all use non-precise proportions, only to facilitate and clarify the purpose of assisting the description of the embodiments of the present application, and are not used to limit the scope of the embodiments of the present application, so they do not have substantial technical significance, any modification of the structure, change of the proportional relationship or adjustment of the size, without affecting the effects and purposes that can be achieved by the present application, should still fall within the scope of the technical content disclosed by the present application.

[0033] It should be noted that in the present application, relational terms such as first and second and the like are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply that there is any such actual relationship or order between these entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or equipment including a series of elements not only includes the elements listed explicitly, but also includes other elements not listed explicitly, or includes elements inherent to such process, method, article or equipment.

[0034] Figure 1 A structural schematic diagram of a chemical vapor deposition device, which includes a reaction cavity 10 surrounded by a top cover, a side wall and a bottom wall to form a reaction space; a spraying mechanism 11 is fixed at the center of the top cover of the reaction cavity 10, for inputting process gas and cleaning gas into the reaction cavity 10. The reaction cavity 10 is also provided with a wafer tray 12 and a flow limiting ring 13 arranged around the wafer tray 12. A heating device 14 and a rotating shaft 16 are also provided below the wafer tray 12, the top end of the rotating shaft 16 is connected with the wafer tray 12, and the bottom end is connected with a rotating driving mechanism 17 for driving the wafer tray 12 to rotate. Among them, the heating device 14 is a radio frequency induction coil, which heats the wafer tray 12 to a suitable temperature through induction heating, so that the wafer carried on the wafer tray 12 obtains the required reaction temperature.

[0035] Further, in order to prevent the process gas and / or the cleaning gas from polluting and corroding the radio frequency induction coil, an isolation plate 15 is further arranged between the wafer tray 12 and the radio frequency induction coil, the isolation plate 15 is arranged around the rotating shaft 16, and an exhaust ring 18 is arranged on the outer side of the isolation plate 15 to exhaust the process gas and / or the cleaning gas from the reaction chamber 10. Since there is a gap between the outer side of the isolation plate 15 and the flow limiting ring 13 and there is a gap between the inner side of the isolation plate 15 and the rotating shaft 16, the process gas and / or the cleaning gas will flow from the gaps to the lower side of the isolation plate 15, thereby corroding the bottom wall of the reaction chamber 10 and the radio frequency induction coil to a certain extent. Since the radio frequency induction coil is internally cooled by water, and the bottom wall of the reaction chamber 10 is provided with a plurality of cooling channels for cooling, there are many welds on the bottom wall of the reaction chamber 10, and long-term gas corrosion can easily cause the radio frequency induction coil and the bottom wall of the reaction chamber 10 to leak water. At the same time, it also affects the smoothness of the radio frequency induction coil, causing a large power gap between the radio frequency induction coils, resulting in uneven heating, thereby causing uneven film deposition and reducing product yield. When the chemical vapor deposition device performs a high-temperature deposition process, the temperature of the wafer tray 12 can reach more than 1000 degrees Celsius, and even more than 1500 to 1600 degrees Celsius. At this time, the isolation plate 15 may be deformed due to high temperature, and the temperature of the radio frequency induction coil is also too high, which has the risk of failure of the radio frequency induction coil.

[0036] In view of the above defects, the embodiment of the present application provides a kind of isolation structure, as shown in Figure 2 And Figure 3 The isolation structure is arranged in the reaction chamber 100 of vapor deposition device, the heating device 101 is arranged in the reaction chamber 100, the heating device 101 is radio frequency induction coil, and the isolation structure includes: first annular cover 201, which includes first space 213 for accommodating the heating device 101;Second annular cover 202 is sleeved on the first annular cover 201;The ring width of the second annular cover 201 is greater than the ring width of the first annular cover 201, so that the cavity 203 is formed between the first annular cover 201 and the second annular cover 202;In the embodiment, the radio frequency induction coil is surrounded by the first annular cover 201 and the second annular cover 202, which blocks the flow path of the reaction gas (process gas or cleaning gas) in the reaction chamber 100 to the radio frequency induction coil, and reduces the corrosion of the radio frequency induction coil and the bottom wall of the reaction chamber 100 by the gas. At the same time, the double-layer annular cover containing the cavity 203 isolates the radiation heat dissipation of the wafer tray to the radio frequency induction coil, not only weakens the temperature influence of the heat radiation of the wafer tray on the radio frequency induction coil, but also realizes the heat preservation effect of the wafer tray.

[0037] Specifically, in the embodiment, as shown in Figure 3As shown, the first annular cover 201 comprises a first annular plate 211 at the top and a first sidewall 212 extending downward along the inner side and the outer side of the first annular plate, the first annular plate 211 and the first sidewall 212 enclose the first space 213, the first space 213 has a downward first opening, through which the first annular cover 201 covers the radio frequency heating coil, so that the radio frequency heating coil is located in the first space 213, that is, the radio frequency heating coil is surrounded by the first annular cover 201; similarly, the second annular cover 202 comprises a second annular plate 221 at the top and a second sidewall 222 extending downward along the inner side and the outer side of the second annular plate, the second annular plate 221 and the second sidewall 222 enclose the second space 223 to accommodate the first annular cover 201, the second space 223 has a downward second opening, because the ring width of the second annular cover 202 is greater than the ring width of the first annular cover 201 (that is, the width of the second annular plate 221 is greater than the width of the first annular plate 211), through the second opening, the second annular cover 202 can cover the first annular cover 201, so that the first annular cover 201 is located in the second space 223, and the cavity 203 is formed between the first annular cover 201 and the second annular cover 202 to block the flow path of the gas into the first space 213, effectively preventing the radio frequency induction coil and the bottom wall of the reaction cavity from being corroded by the reaction gas, while isolating the radiation heat dissipation of the wafer tray from the radio frequency induction coil, reducing the influence of heat radiation on the radio frequency induction coil. In other embodiments, the cross-sectional shape of the first annular cover 201 and the second annular cover 202 is arc-shaped, respectively having a first space accommodating the heating device 101 and a second space accommodating the first annular cover 201, and the radius of the second annular cover 202 is greater than the radius of the first annular cover 201, which is not limited by the present application.

[0038] In order to avoid deformation of the isolation structure in a high temperature environment, the cavity 203 is connected with a heat conduction source (not shown in the figure) for introducing a heat conduction medium into the cavity 203. By introducing the heat conduction medium into the cavity 203, on the one hand, the heat conduction medium can take away the heat of the first annular cover 201 and the second annular cover 202, thereby reducing the temperature of the isolation structure, ensuring that the isolation structure works within a safe temperature range, effectively preventing the isolation structure from deforming and being damaged, and further ensuring the stable operation of the radio frequency induction coil; on the other hand, since different MOCVD processes require different reaction temperatures, the temperature of the wafer tray is relatively high, and the surrounding is all heat insulation material, when the wafer tray needs to be cooled, introducing a heat conduction medium with high heat conduction coefficient into the cavity 203 can also quickly reduce the temperature of the wafer tray, thereby improving the production efficiency. The heat conduction medium can be a cooling gas, which can be selected from one or more of nitrogen, argon, helium or hydrogen.

[0039] A support plate is provided below the first annular cover 201 and the second annular cover 202, and the first annular cover 201, the second annular cover 202, and the support plate together form the cavity 203. Specifically, in this embodiment, as... Figure 3 As shown, the bottom end of the first sidewall 212 is provided with a first support plate 214 extending radially toward the second sidewall 222. The first support plate 214 extends to the bottom end of the second sidewall 222 to support the second sidewall 222, so that the cavity 203 is surrounded by the first sidewall 212, the second sidewall 222, the first support plate 214, the first annular plate 211, and the second annular plate 221. The first support plate 214 covers the bottom wall of the reaction chamber located between the first sidewall 212 and the second sidewall 222, thereby increasing the length of the first gap between the bottom ends of the first sidewall 212 and the second sidewall 222 and the bottom wall of the reaction chamber, thereby increasing the flow resistance of gas flowing into the first space 213 from the first gap, reducing the amount of gas flowing into the first space 213, and preventing gas from corroding the radio frequency induction coil.

[0040] Furthermore, since a second gap exists between the bottom end of the second sidewall 222 and the upper surface of the first support plate 214, the cavity 203 is connected to the reaction chamber 100. When cooling gas is introduced into the cavity 203, the pressure inside the cavity 203 remains balanced with the pressure inside the reaction chamber 100, effectively preventing excessive pressure inside the cavity 203 from causing deformation of the isolation structure. Simultaneously, as... Figure 2 As shown, the outer circumferential side of the isolation structure is provided with a suction ring 103, which can quickly remove the cooling gas that diffuses into the reaction chamber 100 from the reaction chamber 100 from the reaction chamber 100, thereby reducing the impact of the cooling gas on the thin film deposition process.

[0041] In another embodiment, such as Figure 4 As shown, the bottom end of the second sidewall 222 is provided with a second support plate 224 extending radially toward the first sidewall 212. The second support plate 224 extends to the bottom end of the first sidewall 212 to support the first sidewall 212, so that the cavity 203 is surrounded by the first sidewall 212, the second sidewall 222, the second support plate 224, the first annular plate 211, and the second annular plate 221. Similarly, since there is a second gap between the bottom end of the first sidewall 212 and the upper surface of the second support plate 224 in this embodiment, the cavity 203 communicates with the first space 213. When cooling gas is introduced into the cavity 203, the pressure in the cavity 203 remains balanced with the pressure in the first space 213, compared to... Figure 3In the embodiment shown, the embodiment can avoid the cooling gas in the cavity 203 from flowing directly into the reaction cavity 100 from the second gap, eliminating the influence of the cooling gas on the thin film deposition process.

[0042] As an optional embodiment, the first support plate 214 is integrally connected with the bottom end of the first sidewall 212, or the second support plate 224 is integrally connected with the bottom end of the second sidewall 224. Through the integral connection of the sidewall and the support plate, the connecting gap between the two is eliminated, avoiding the outflow of the cooling gas from the connecting gap.

[0043] Further, as shown in Figure 3 and Figure 4 The bottom end of the first support plate 214 or the second support plate 224 is provided with a first sealing member 215 (such as a sealing rubber ring), and the first support plate 214 or the second support plate 224 is pressed on the first sealing member 215 to seal the first gap between the bottom end of the first sidewall 212 and the second sidewall 222 and the bottom wall of the reaction cavity, so as to isolate the first space 213 from the reaction cavity, block the flow path of the reaction gas in the reaction cavity 100 to the radio frequency induction coil, and avoid the reaction gas flowing from the first gap between the first support plate 214 or the second support plate 224 and the bottom wall of the reaction cavity into the first space 213 to corrode the radio frequency induction coil.

[0044] In order to further improve the heat conduction efficiency of the cavity 203, a second sealing member (not shown in the figure) is arranged between the bottom end of the first sidewall 212 and the first support plate 214, or a second sealing member (not shown in the figure) is arranged between the bottom end of the second sidewall 222 and the second support plate 224, or the first support plate 214 (or the second support plate 224) is integrally connected with the bottom end of the first sidewall 212 and the bottom end of the second sidewall 222, so as to form a sealed space of the cavity 203 relative to the first space 213 and the reaction cavity 100. At this time, the heat conduction medium can be a circulating cooling liquid, such as water. This is because the thermal conductivity of the cooling liquid is generally higher than that of the cooling gas. In the case that the cavity 203 is in a sealed state, using a cooling liquid as a heat conduction medium can achieve better cooling effect, and the cooling liquid will not flow into the reaction cavity to cause pollution. It should be noted that when the cavity 203 is a sealed space, as shown in Figure 5As shown, the support plate is provided with a heat-conducting medium inlet 231 and a heat-conducting medium outlet 232 which are in communication with the cavity 203, and the bottom wall of the reaction cavity 100 is respectively provided with an inlet port and an outlet port (not shown in the figure) which are in position correspondence with the heat-conducting medium inlet 231 and the heat-conducting medium outlet 232, and the inlet port and the outlet port are connected with a heat-conducting source, and the heat-conducting medium provided by the heat-conducting source flows into the cavity 203 through the inlet port and the heat-conducting medium inlet 231 in sequence and flows along the cavity 203, and then flows out of the cavity 203 through the heat-conducting medium outlet 232, and then flows back to the heat-conducting source through the outlet port, so as to realize the recycling of the heat-conducting medium. In other embodiments, cooling gas can also be used as the heat-conducting medium, and the cooling gas flows along the cavity 203 without leaking into the reaction cavity 100, so as to realize the recycling of the cooling gas, and the cooling gas after absorbing heat can be rapidly cooled outside the reaction cavity 100, so as to improve the heat-conducting efficiency of the cooling gas.

[0045] The first annular cover 201 and the second annular cover 202 are made of a temperature-resistant non-metallic material, so as to isolate the wafer tray from the radiation heat dissipation of the radio frequency heating coil, thereby protecting the radio frequency heating coil from the influence of the radiation heat dissipation and playing a heat preservation role on the wafer tray. The temperature-resistant non-metallic material includes quartz, zirconia and the like. As an optional embodiment, the first annular cover 201 is transparent quartz, and the second annular cover 202 is non-transparent quartz, which can absorb and scatter part of the radiation heat, thereby achieving the purpose of isolating the radiation heat dissipation. In another embodiment, the first annular cover 201 is transparent quartz, and the second annular cover 202 is non-transparent zirconia, because the melting point of zirconia is higher, and it has good structural stability, and is more suitable for the high-temperature process environment of the MOCVD process. It should be noted that the first annular cover 201 and the second annular cover 202 can be transparent or non-transparent according to actual needs.

[0046] Correspondingly, the utility model also provides a chemical vapor deposition device, like Figure 2As shown, it comprises: a reaction cavity 100. In some embodiments, the reaction cavity 100 is surrounded by a metal alloy material to form a reaction space with a substantially circular cross section. A wafer tray 102 is arranged in the reaction cavity 100 for supporting one or more wafers; in some embodiments, the wafer tray 102 is provided with a plurality of sub-trays for supporting wafers to achieve higher processing efficiency, while the sub-trays can rotate under the driving of the gas flow. The wafer tray 102 is supported by a rotating shaft 106, the bottom end of the rotating shaft 106 is connected with a rotating driving mechanism (not shown in the figure), which can drive the wafer tray 102 to rotate, so as to achieve the technical effect of more uniform distribution of reaction gas and temperature distribution on the wafer surface. A heating device 101 is arranged below the wafer tray 102, the heating device 101 is a radio frequency induction coil, the radio frequency induction coil is supported by the support blocks 105 arranged at intervals (as shown in Figure 5 As shown, the heating device 101 is located in the first space 213 of the first annular cover 201. By arranging the isolation structure, the flow path of the reaction gas in the reaction cavity 100 to the radio frequency induction coil is blocked, reducing the corrosion of the gas to the radio frequency induction coil and the bottom wall of the reaction cavity 100. At the same time, the double-layer annular cover containing the cavity 203 isolates the radiation heat dissipation of the wafer tray 102 to the radio frequency induction coil, not only weakening the temperature influence of the heat radiation of the wafer tray 102 on the radio frequency induction coil, but also achieving the heat preservation effect of the wafer tray 102.

[0047] As shown, Figure 2 The reaction cavity 100 is further provided with a spraying mechanism 104 in the middle of the top for delivering the reaction gas (process gas or cleaning gas) into the reaction cavity 100. In this embodiment, the spraying mechanism 104 is a spraying head supplying reaction gas in the horizontal direction; in other embodiments, the spraying mechanism 104 can adopt any spraying head structure or other gas inlet structure in the prior art, such as a spraying head supplying reaction gas in the vertical direction, as long as it can uniformly supply reaction gas to the wafer tray 102. A gas extraction ring 103 is further arranged around the circumferential outer side of the second annular cover 202, the gas extraction ring 103 has an inner cavity, and the inner cavity is in communication with the first gas outlet 111 on the bottom wall of the reaction cavity 100. The first gas extraction port 111 is in communication with the reaction cavity 100 and connected with a first gas extraction pump (not shown in the figure). After the process gas supplied by the spraying mechanism 104 is deposited into a film on the wafer, the residual gas flows to the gas extraction ring 103 and is discharged from the reaction cavity 100.

[0048] Further, as shown, Figure 2 And Figure 5As shown, the bottom wall of the reaction cavity 100 is further provided with a gas inlet 112 and a second gas outlet 113 in communication with the first space 213, the gas inlet 112 and the second gas outlet 113 are respectively arranged between two adjacent support blocks 105, the gas inlet 112 is used for introducing purge gas into the first space 213, and the second gas outlet 113 is connected with a second air pump (not shown in the figure) for discharging the purge gas in the first space 213. In other embodiments, the second gas outlet 113 can share the first air pump with the first gas outlet 111, and the utility model does not make any limitation on this.

[0049] In order to keep the air pressure balance between the first space 213 and the reaction cavity 100, the first space 213 and the reaction cavity 100 are respectively provided with pressure measuring devices (such as vacuum gauges, not shown in the figure), which respectively monitor the pressure in the first space 213 and the pressure in the reaction cavity 100, and keep the pressure balance of the first space 213 and the reaction cavity 100 by controlling the flow of the purge gas flowing in or out of the gas inlet 112 or the second gas outlet 113. Further, if the radio frequency induction coil has a water leakage, the pressure data of the first space 213 can be monitored in real time by the pressure measuring device arranged in the first space 213, so as to prevent the loss caused by the water leakage of the entire reaction cavity 100.

[0050] In summary, the utility model provides an isolation structure and a chemical vapor deposition device, which forms a double-layer isolation structure by arranging a first annular cover 201 and a second annular cover 202, surrounds the radio frequency induction coil, blocks the flow path of the reaction gas in the reaction cavity 100 to the radio frequency induction coil, and reduces the corrosion of the gas to the radio frequency induction coil and the bottom wall of the reaction cavity 100. At the same time, the double-layer annular cover containing the cavity 203 isolates the radiation heat dissipation of the wafer tray to the radio frequency induction coil, not only weakens the temperature influence of the heat radiation of the wafer tray on the radio frequency induction coil, but also realizes the heat preservation effect of the wafer tray, which is beneficial to improve the uniformity of film deposition.

[0051] Further, by introducing a heat-conducting medium into the cavity 203, the heat-conducting medium can take away the heat of the first annular cover 201 and the second annular cover 202, thereby reducing the temperature of the isolation structure, ensuring that the isolation structure works within a safe temperature range, effectively preventing the isolation structure from being damaged due to deformation, and further ensuring the stable operation of the radio frequency induction coil. At the same time, the temperature of the wafer tray can also be quickly reduced to adapt to different reaction temperatures corresponding to different process requirements of MOCVD, thereby improving the production efficiency.

[0052] Although the content of the utility model has been introduced in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of the utility model. After reading the above content, various modifications and substitutions of the utility model will be obvious to those skilled in the art. Therefore, the protection scope of the utility model should be limited by the attached claims.

Claims

1. An isolation structure disposed within the reaction chamber of a vapor deposition apparatus, characterized in that, The reaction cavity is provided with a heating device, and the isolation structure comprises: a first annular cover containing a first space for accommodating the heating device; a second annular cover sleeved on the first annular cover; the ring width of the second annular cover is greater than that of the first annular cover, so that a cavity is formed between the first annular cover and the second annular cover.

2. The isolation structure of claim 1, wherein, The cavity is connected with a heat conduction source for introducing a heat conduction medium into the cavity.

3. The isolation structure of claim 2, wherein, The first annular cover comprises a first annular plate at the top and first side walls extending downward along the inner side and the outer side of the first annular plate, and the first annular plate and the first side walls enclose the first space; The second annular cover comprises a second annular plate at the top and second side walls extending downward along the inner side and the outer side of the second annular plate, and the second annular plate and the second side walls enclose a second space for accommodating the first annular cover.

4. The isolation structure of claim 3, wherein, The cavity is in communication with at least one of the first space and the reaction cavity.

5. The isolation structure of claim 4, wherein, The lower part of the first annular cover and the second annular cover is provided with a support plate, and the first annular cover, the second annular cover and the support plate jointly enclose the cavity.

6. The isolation structure of claim 5, wherein, At least one of the first side wall and the second side wall has a gap with the support plate.

7. The isolation structure of claim 3, wherein The cavity is a sealed space relative to the first space and the reaction cavity.

8. The isolation structure of claim 7, wherein, The cavity is introduced with circulating heat conduction medium.

9. The isolation structure of claim 7, wherein, The lower part of the first annular cover and the second annular cover is provided with a support plate, and the first annular cover, the second annular cover and the support plate jointly enclose the sealed cavity.

10. The isolation structure of claim 5 or 9, wherein, A first sealing member is arranged between the support plate and the bottom wall of the reaction cavity.

11. The isolation structure of claim 1, wherein The first annular cover and the second annular cover are made of temperature-resistant non-metallic materials.

12. The isolation structure of claim 11, wherein, The first annular cover and the second annular cover are made of quartz or zirconia.

13. The isolation structure of claim 1, wherein At least one of the first annular cover and the second annular cover is non-transparent.

14. A chemical vapor deposition apparatus characterized by comprising: Comprise: a reaction cavity; a wafer tray arranged in the reaction cavity for supporting a wafer; a heating device arranged below the wafer tray, the heating device being a radio frequency induction coil for heating the wafer tray; an isolation structure as claimed in any one of claims 1 to 13 is arranged between the wafer tray and the heating device, and the heating device is located in the first space of the first annular cover.

15. The chemical vapor deposition apparatus of claim 14, wherein An air inlet and an air outlet are arranged on the bottom wall of the reaction cavity and are in communication with the first space, the air inlet is used for introducing purge gas into the first space, and the air outlet is used for discharging the purge gas in the first space.

16. The chemical vapor deposition apparatus of claim 14, wherein Further comprise: a pressure measuring device arranged in the first space and the reaction cavity respectively for monitoring the pressure in the first space and the pressure in the reaction cavity.

17. The chemical vapor deposition apparatus of claim 14, wherein Further comprise: an air extraction ring arranged around the isolation structure.

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