MEMS three-dimensional capacitor
By setting up cross-connected support structures in the trench area of the MEMS three-dimensional capacitor, designed in a cross-shaped or trident-shaped pattern and arranged in an array, the area of the plates facing each other is increased, which solves the problem of low capacitance value of MEMS three-dimensional capacitors and realizes a capacitor with high capacitance density and low impedance.
Patent Information
- Application Number
- CN202520148034.9
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-22
- Publication Date
- 2026-01-09
- Estimated Expiration
- 2035-01-22
AI Technical Summary
Existing MEMS three-dimensional capacitors have low capacitance values and cannot completely replace ceramic capacitors. Existing methods for improving capacitance values suffer from high cost, complex processes, low yield, and low breakdown voltage.
Cross-connected support structures are set in the trench area of the MEMS three-dimensional capacitor. The structure is designed as a cross or a trident-like shape and arranged in an array according to certain rules to form a trench network, which increases the facing area of the plates. The capacitor structure is formed by depositing plate layers and dielectric layers in the trench area.
It improves the capacitance value of MEMS three-dimensional capacitors, and has the advantages of low impedance, low leakage current and high capacitance density, making it suitable for capacitors of different package sizes.
Smart Images
Figure CN223785014U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present disclosure belongs to the technical field of MEMS three-dimensional capacitor elements, and particularly relates to a MEMS three-dimensional capacitor. BACKGROUND
[0002] The MEMS three-dimensional capacitor generally refers to a kind of parallel-plate capacitor device with high specific surface area, which is manufactured on a wafer substrate through etching and thin film process. Compared with traditional ceramic capacitors, the MEMS three-dimensional capacitor has the advantages of small volume, low equivalent series resistance / inductance (ESR / ESL), high stability and high decoupling capacity. However, the relatively low capacitance of the MEMS three-dimensional capacitor compared with the ceramic capacitor has been a key problem that prevents it from completely replacing the ceramic capacitor. Currently, there are three main techniques for increasing the capacitance of the MEMS three-dimensional capacitor: the first technique is to increase the number of layers of the capacitor structure; the second technique is to use a material with a higher dielectric constant as the dielectric; and the third technique is to increase the depth of the etched grooves on the capacitor.
[0003] Increasing the number of layers of the capacitor structure in the MEMS three-dimensional capacitor generally requires at least one additional deposition process of dielectric material and etching process of the material, one deposition process of capacitor substrate material and etching process of the material. The increase in the process will inevitably cause problems such as cost increase, process complexity increase and yield reduction. Using a dielectric material with a higher dielectric constant can increase the capacitance of the MEMS capacitor, but the breakdown field strength of commonly used dielectric materials with high dielectric constant, such as hafnium dioxide (HfO2) and aluminum oxide (Al2O3), is relatively low, and the breakdown voltage of the capacitor using these materials as the dielectric layer is generally low. Etching grooves on the capacitor is a method that can effectively increase the facing area of the electrode plates in the capacitor structure, but the greater the groove depth, the more difficult the etching process, and the lower the yield. This method is heavily dependent on the technical ability of the processing party. CONTENT OF THE UTILITY MODEL
[0004] The present disclosure aims to at least solve one of the technical problems existing in the prior art, and provides a MEMS three-dimensional capacitor.
[0005] The present disclosure provides a MEMS three-dimensional capacitor, which comprises:
[0006] A substrate with a groove region, the groove region of the substrate is provided with a plurality of support structures and grooves surrounding the support structures, the support structures comprise first support portions arranged at least in a first direction and second support portions arranged in a second direction, and the first support portions and the second support portions are cross-connected;
[0007] At least one layer of capacitor structure, the capacitor structure comprises a first electrode plate layer, a dielectric layer and a second electrode plate layer which are sequentially stacked on the grooves and the support structures.
[0008] Optionally, the support structure comprises first support portions arranged along a first direction and second support portions arranged along a second direction, wherein,
[0009] An angle between the first direction and the second direction is 60°-120°.
[0010] Optionally, the angle between the first direction and the second direction is 90°.
[0011] Optionally, the support structure has a cross-section in a shape of a cross.
[0012] Optionally, end portions and intersection portions of the first support portions and the second support portions are in a shape of a circular arc.
[0013] Optionally, the support structure comprises first support portions arranged along a first direction, second support portions arranged along a second direction, and third support portions arranged along a third direction, wherein,
[0014] An angle between the first direction, the second direction, and the third direction is the same or different.
[0015] Optionally, the angles between the first direction, the second direction, and the third direction are all equal.
[0016] Optionally, end portions and intersection portions of the first support portions, the second support portions, and the third support portions are in a shape of a circular arc.
[0017] Another aspect of the present disclosure provides a MEMS three-dimensional capacitor, comprising:
[0018] A substrate having a trench region, the trench region of the substrate being provided with a plurality of support structures and trenches surrounding the support structures, the support structures comprising first support portions arranged along a first direction and second support portions arranged along a second direction, and the first support portions and the second support portions being cross-connected;
[0019] The substrate is made of a conductive material.
[0020] At least one capacitor structure, the substrate serving as a first electrode plate layer of the capacitor structure, the capacitor structure further comprising a dielectric layer and a second electrode plate layer arranged in sequence on the trenches and the support structures.
[0021] Optionally, the plurality of support structures are arranged in an array; wherein,
[0022] The plurality of support structures arranged in adjacent two rows are alternately and spacedly arranged.
[0023] The plurality of support structures arranged in two adjacent rows are alternately and spacedly arranged.
[0024] The present disclosure provides a MEMS three-dimensional capacitor, comprising: a substrate with a trench region, the trench region of the substrate is provided with a plurality of support structures and a trench surrounding the support structures, the support structure comprises a first support part arranged at least in a first direction and a second support part arranged in a second direction, and the first support part and the second support part are cross-connected; at least one layer of capacitor structure, the capacitor structure comprises a first electrode plate layer, a dielectric layer and a second electrode plate layer which are sequentially stacked on the trench and the support structure. The present disclosure forms a support structure by etching a pattern on a wafer substrate, which is beneficial to increase the facing area of the electrode plate in the capacitor structure of the MEMS three-dimensional capacitor, thereby increasing the capacitance value of the MEMS three-dimensional capacitor. BRIEF DESCRIPTION OF DRAWINGS
[0025] Figure 1 A schematic view of the trench region in the MEMS three-dimensional capacitor of the present disclosure embodiment 1 and embodiment 2;
[0026] Figure 2 A schematic view of the trench region in the MEMS three-dimensional capacitor of the present disclosure embodiment 1 and embodiment 2;
[0027] Figure 3 A schematic view of the trench region in the MEMS three-dimensional capacitor of the present disclosure embodiment 3 and embodiment 4;
[0028] Figure 4 A schematic view of the trench region in the MEMS three-dimensional capacitor of the present disclosure embodiment 3 and embodiment 4;
[0029] Figure 5 A schematic view of the cross section of the trench region in the MEMS three-dimensional capacitor of the present disclosure embodiment 1 to embodiment 4;
[0030] Figure 6 A schematic view of filling one layer of capacitor structure in the trench region of the MEMS three-dimensional capacitor of the present disclosure embodiment 1 and 3;
[0031] Figure 7 A schematic view of filling two layers of capacitor structure in the trench region of the MEMS three-dimensional capacitor of the present disclosure embodiment 1 and 3. DETAILED DESCRIPTION
[0032] In order for those skilled in the art to better understand the technical solutions of the present disclosure, the present disclosure will be further described in detail below in conjunction with the drawings and specific embodiments. It should be understood that the specific embodiments described herein are only used to explain the present disclosure and are part of the embodiments of the present disclosure, but not all the embodiments. Based on the embodiments of the present disclosure, all other embodiments obtained by those skilled in the art without creative labor fall within the protection scope of the present disclosure.
[0033] Embodiment 1
[0034] As shown in Figure 1 , Figure 2 , Figure 5 , Figure 6 and Figure 7 , the present example proposes a MEMS three-dimensional capacitor, comprising: a substrate 110 with a trench region 120 and at least one capacitor structure 130; wherein the trench region 120 on the substrate 110 is provided with a plurality of support structures 121 and a trench 122 surrounding the support structures 121, the support structure 121 comprises a first support part 1211 arranged along a first direction and a second support part 1212 arranged along a second direction, and the first support part 1211 and the second support part 1212 are cross-connected; the capacitor structure 130 comprises a first electrode layer 131, a dielectric layer 132 and a second electrode layer 133 which are sequentially stacked on the trench 122 and the support structure 121.
[0035] It should be noted that the trenches in the trench region of the present embodiment can be obtained by etching or by depositing the support structure, which is not specifically limited.
[0036] It should be further noted that the shape and number of the trench region on a single MEMS three-dimensional capacitor in the present embodiment are not specifically limited, which can be any shape and one or more.
[0037] It should be further noted that the included angle of the cross-connection of the first support part and the second support part in the present embodiment is not specifically limited, for example, the included angle of the first direction and the second direction is 60°-120°.
[0038] In some preferred embodiments, the included angle of the first direction and the second direction is preferably 90°, that is, the first support part and the second support part are vertically cross-connected, and the cross section of the support structure is cross-shaped.
[0039] It should be understood that the first direction and the second direction are not specifically limited in the embodiment, for example, the first direction is a horizontal direction, and the second direction is a vertical direction, and the angle between the first direction and the second direction is 90°; of course, the first direction can also be a direction inclined by 45° along the horizontal direction, and the second direction is a direction inclined by 135° along the horizontal direction, so that the angle between the first direction and the second direction is also 90°; of course, the first direction and the second direction can also be other directions, which are not listed one by one here.
[0040] As shown in Figure 1 and Figure 2 , when the angle between the first direction and the second direction is 90°, and the first direction is a horizontal direction and the second direction is a vertical direction, the cross section of the support structure 121 is a positive cross shape. Of course, in other embodiments, when the angle between the first direction and the second direction is 90°, and the first direction is a direction inclined by 45° along the horizontal direction, and the second direction is a direction inclined by 135° along the horizontal direction, the cross section of the support structure is an “X” shape.
[0041] It should be understood that the first direction and the second direction can also have other angles between them in the embodiment, and the first direction and the second direction can also be other different directions, which are not listed one by one here.
[0042] Further, as shown in Figure 2 , the end portions and the intersection connections of the first support portion 1211 and the second support portion 1212 are in a circular arc shape, that is, the end portions and the connections of the support structure can be rounded to adapt to the actual process capability.
[0043] Further, the number and arrangement of the support structures in the trench region are not specifically limited in the embodiment. As shown in Figure 1 and Figure 2 , a plurality of support structures 121 are arranged in the trench region 120, the plurality of support structures 121 are arranged in an array, and the plurality of support structures 121 arranged in adjacent two rows are alternately and spacedly arranged, and at the same time, the plurality of support structures 121 arranged in adjacent two columns are also alternately and spacedly arranged. This kind of alternately and spacedly arranged manner is beneficial to increase the density of the support structures, and further increase the facing area of the plate in the capacitor structure.
[0044] It should be noted that in the plurality of support structures arranged in an array, the distance between the plurality of support structures arranged in each row is equal, and the distance between the plurality of support structures arranged in each column is also equal. For example, as shown in Figure 1 and Figure 2As shown, the first support part 1211 has two first side arms 1211a symmetrically arranged and a first connecting arm 1211b sandwiched between the two first side arms 1211a, and the second support part 1212 also has two second side arms 1212a symmetrically arranged and a second connecting arm 1212b sandwiched between the two second side arms 1212a. When the first support part 1211 and the second support part 1212 are cross-connected, the first connecting arm 1211b and the second connecting arm 1212b coincide, and the first connecting arm and the second connecting arm serve as the center of the support structure, and the width of the first connecting arm and the second connecting arm is equivalent to the width of the first support part and the second support part. Thus, the length of the first side arm is set as A, the length of the second side arm is set as B, the width of the first support part 1211 and the second support part 1212 is set as C, and the width of the groove 122 around the support structure 121 is set as T3. Taking the center of one of the support structures 121 as the coordinate origin, the upper left, upper right, lower left, and lower right of the support structure 121 are respectively distributed with one support structure 121, and the projection of the centers of the four support structures on the horizontal coordinate axis is at a distance of A+C+T3 from the center of the support structure at the coordinate origin. The horizontal distance between the centers of the upper left and upper right support structures is 2A+2C+2T3, and the horizontal distance between the centers of the lower left and lower right support structures is also 2A+2C+2T3. Secondly, the projection of the four support structures on the vertical coordinate axis is at a distance of B+1 / 2(C+T3) from the center of the support structure at the coordinate origin, that is, the vertical distance between the center of the support structure at the coordinate origin and the centers of the upper left, upper right, lower left, and lower right support structures is B+1 / 2(C+T3), and the vertical distance between the center of the support structure at the coordinate origin and the centers of the support structures above and below the coordinate origin is 2B+C+T3. The multiple support structures are periodically arranged at this interval.
[0045] It is worth noting that the support structure 121 is intercepted by the boundary of the groove region 120, and the part outside the groove region 120 is not reserved, and the support structure 121 in the groove region 120 is reserved, as shown in Figure 1 and Figure 2 As shown, thus, the edge part of the groove region 120 will form a first edge support structure 121A and a second edge support structure 121B. Among them, the first edge support structure 121A is a part of the support structure 120 intercepted in the vertical direction, and the second edge support structure 121B is a part of the support structure 120 intercepted in the horizontal direction.
[0046] Furthermore, a layer of capacitor structure can be filled in the groove of the groove region on the substrate of the MEMS three-dimensional capacitor, or two layers of capacitor structure can be filled, of course, more layers of capacitor structure can also be filled, which is not specifically limited.
[0047] In some preferred embodiments, asFigure 5 and Figure 6 As shown in FIG. 12, a capacitor structure 130 is arranged on the surface of the trench 122 and the support structure 121, which includes a first electrode plate layer 131, a dielectric layer 132 and a second electrode plate layer 133. On this basis, subsequent processes such as etching and deposition can be performed to finally form a MEMS three-dimensional capacitor.
[0048] In other preferred embodiments, as shown in FIG. 13, two capacitor structures 130 are arranged on the surface of the trench 122 and the support structure 121, each of which includes a first electrode plate layer 131, a dielectric layer 132 and a second electrode plate layer 133. In this case, the second electrode plate layer 133 in the first capacitor structure 130 can simultaneously serve as the second electrode plate layer in the second capacitor structure 130. On this basis, subsequent processes such as etching and deposition can be performed to finally form a MEMS three-dimensional capacitor. Figure 5 and Figure 7 As shown in FIG. 13, two capacitor structures 130 are arranged on the surface of the trench 122 and the support structure 121, each of which includes a first electrode plate layer 131, a dielectric layer 132 and a second electrode plate layer 133. In this case, the second electrode plate layer 133 in the first capacitor structure 130 can simultaneously serve as the second electrode plate layer in the second capacitor structure 130. On this basis, subsequent processes such as etching and deposition can be performed to finally form a MEMS three-dimensional capacitor.
[0049] It should be further noted that the material of the first electrode plate layer and the second electrode plate layer is not limited in the present embodiment and can be metal or other materials with good conductivity. In addition, the dielectric layer is not limited in the present embodiment and can be composed of, for example, silicon oxide, silicon nitride, hafnium oxide, zirconium oxide or a combination of multiple dielectric materials. Furthermore, the material of the substrate is not limited in the present embodiment and can be, for example, a semiconductor material such as silicon, silicon carbide or gallium arsenide, an insulating material such as quartz or a doped semiconductor material. When the substrate is a conductive material such as silicon, the substrate can serve as the first electrode plate layer.
[0050] In summary, by arranging the capacitor structure of the MEMS three-dimensional capacitor in the trench region of the device, which has a plurality of support structures and deep trenches surrounding the support structures, the support structures are designed in a cross-like shape and arranged periodically according to certain rules to form a trench network, and then the electrode plate layer and the dielectric layer are deposited in the trench region to form the capacitor structure and finally form the capacitor device, thereby improving the ratio of the capacitance of the capacitor to the area of the device and meeting the demand of the application end for a capacitor with a larger capacitance.
[0051] Embodiment 2
[0052] As shown in FIG. 14, Figure 1 , Figure 2 , Figure 5As shown, this example proposes a MEMS three-dimensional capacitor, including: a substrate 110 having a trench region 120 and at least one capacitor structure; wherein, a plurality of support structures 121 and a trench 122 surrounding the support structures 121 are provided in the trench region 120 on the substrate 110, the support structure 121 includes a first support portion 1211 disposed along a first direction and a second support portion 1212 disposed along a second direction, and the first support portion 1211 and the second support portion 1212 are cross-connected; the substrate 110 is a conductive material, and the substrate 110 serves as the first electrode layer of the capacitor structure. At the same time, the capacitor structure also includes a dielectric layer and a second electrode layer sequentially stacked on the trench 122 and the support structure 121.
[0053] It should be noted that in this embodiment, the substrate is used as the first electrode layer of the capacitor structure, and the arrangement and shape of the trenches and support structure are the same as in Embodiment 1. For details, please refer to Embodiment 1.
[0054] Example 3
[0055] like Figures 3 to 7 As shown, this example proposes a MEMS three-dimensional capacitor, including: a substrate 110 having a trench region 120 and at least one capacitor structure 130; wherein, a plurality of support structures 121 and a trench 122 surrounding the support structures 121 are provided in the trench region 120 on the substrate 110; the support structure 121 includes a first support portion 1211 disposed along a first direction, a second support portion 1212 disposed along a second direction, and a third support portion 1213 disposed along a third direction, and the first support portion 1211, the second support portion 1212 and the third support portion 1213 are cross-connected; the capacitor structure 130 includes a first electrode layer 131, a dielectric layer 132 and a second electrode layer 133 sequentially stacked on the trench 122 and the support structure 121.
[0056] It should be noted that the trenches in the trench area of this embodiment can be obtained by etching or by depositing a support structure, and there is no specific limitation on this.
[0057] It should be further noted that this embodiment does not specifically limit the shape and number of trench regions on a single MEMS three-dimensional capacitor; the shape can be any shape, and the number can be one or more.
[0058] It should be noted that the included angle of the first support part, the second support part and the third support part of the embodiment is not limited, and the included angle between the first direction, the second direction and the third direction can be equal or not equal. For example, two of the three included angles are equal, and the support structure formed in this case is in the shape of "Y"; for another example, all of the three included angles are equal, and the support structure formed in this case is in the shape of trident; for another example, all of the three included angles are not equal, and the support structure formed in this case can be in the shape of trident.
[0059] In some preferred embodiments, as shown in Figure 3 and Figure 4 , the included angles of the first direction, the second direction and the third direction are all equal, and the included angle is preferably 120°, so that the first support part 1211, the second support part 1212 and the second support part 1213 are connected at equal intervals, and the cross section of the support structure 121 is in the shape of trident.
[0060] Similarly, the embodiment does not limit the first direction, the second direction and the third direction, for example, the first direction can be a vertically upward direction, the second direction and the third direction can be symmetrically arranged on both sides of the vertically downward direction, and the included angle with the vertically downward direction is 60°, at this time, the cross section of the support structure is in the shape of equilateral trident. Of course, the first direction, the second direction and the third direction can also be other directions, which are not listed one by one here.
[0061] It should be understood that the included angle between the first direction, the second direction and the third direction of the embodiment can also be other angles, and the first direction, the second direction and the third direction can also be other different directions, which are not listed one by one.
[0062] Further, as shown in Figure 4 , the end of the first support part 1211, the second support part 1212 and the third support part 1213 and the intersection are in the shape of a circular arc, that is, the end and the connection of the support structure 121 can be rounded to adapt to the actual process capacity.
[0063] Further, the embodiment does not limit the number and arrangement of the support structure in the trench region. As shown in Figure 3 and Figure 4 , a plurality of support structures 121 are arranged in the trench region 120, the plurality of support structures 121 are arranged in an array, and the plurality of support structures 121 arranged in adjacent two rows are alternately arranged at intervals, and at the same time, the plurality of support structures 121 arranged in adjacent two columns are also alternately arranged at intervals. This kind of interval alternation arrangement is conducive to increasing the density of the support structure, and further increasing the facing area of the plate in the capacitor structure.
[0064] It should be noted that in the arrayed plurality of support structures, the distance between the plurality of support structures arranged in each row is equal, and the distance between the plurality of support structures arranged in each column is also equal.
[0065] Similarly, as shown in Figure 3 and Figure 4 , the support structure 121 of the present embodiment is intercepted by the boundary of the trench region 120, the part outside the trench region 120 is not reserved, and the support structure 121 in the trench region 120 is reserved, so that the first edge support structure 121A and the second edge support structure 121B are formed at the edge part of the trench region 120. Among them, the first edge support structure 121A is a part of the support structure 120 intercepted in the vertical direction, and the second edge support structure 121B is a part of the support structure 120 intercepted in the horizontal direction.
[0066] Further, a layer of capacitor structure can be filled in the trench of the trench region on the substrate of the MEMS three-dimensional capacitor, or two layers of capacitor structure can be filled, of course, more layers of capacitor structure can be filled, which is not limited.
[0067] In some preferred embodiments, as shown in Figure 5 and Figure 6 , a layer of capacitor structure 130 is arranged on the surface of the trench 122 and the support structure 121, which includes a first electrode plate layer 131, a dielectric layer 132 and a second electrode plate layer 133, on the basis of which subsequent processes such as etching, deposition, etc. can be carried out, and finally made into a MEMS three-dimensional capacitor.
[0068] In other preferred embodiments, as shown in Figure 5 and Figure 7 , two layers of capacitor structure 130 are arranged on the surface of the trench 122 and the support structure 121, and both layers of capacitor structure 130 include a first electrode plate layer 131, a dielectric layer 132 and a second electrode plate layer 133, wherein the second electrode plate layer 133 in the first layer of capacitor structure 130 can be used as the first electrode plate layer 131 in the second layer of capacitor structure 130, and on the basis of which subsequent processes such as etching, deposition, etc. can be carried out, and finally made into a MEMS three-dimensional capacitor.
[0069] It should be noted that the material of the first and second electrode plate layers is not limited in the embodiment, and can be metal or other material with good conductivity. In addition, the dielectric layer is not limited in the embodiment, and can be composed of silicon oxide, silicon nitride, hafnium oxide, zirconium oxide, or a combination of multiple dielectric materials. In addition, the material of the substrate is not limited in the embodiment, and can be semiconductor material such as silicon, silicon carbide, gallium arsenide, insulating material such as quartz, or doped semiconductor material. When the substrate is a conductive material such as a silicon substrate, the substrate can be used as the first electrode plate layer.
[0070] In summary, by locating the capacitor structure of the MEMS three-dimensional capacitor in the trench region of the device, the trench region has a plurality of support structures and deep trenches surrounding the support structures, the support structures are designed as a three-pronged star shape and arranged periodically according to a certain rule to form a trench network, and the capacitor structure is formed by depositing the electrode plate layer and the dielectric layer in the trench region and finally manufactured as a capacitor device, thereby improving the ratio of the capacitance of the capacitor to the area of the device and meeting the demand of the application end for a capacitor with a larger capacitance.
[0071] Embodiment 4
[0072] As shown in Figures 3 to 5 , the example proposes a MEMS three-dimensional capacitor, which includes a substrate 110 with a trench region 120 and at least one capacitor structure; the trench region 120 on the substrate 110 is provided with a plurality of support structures 121 and trenches 122 surrounding the support structures 121, the support structure 121 includes a first support part 1211 arranged in a first direction, a second support part 1212 arranged in a second direction, and a third support part 1213 arranged in a third direction, and the first support part 1211, the second support part 1212, and the third support part 1213 are cross-connected; the substrate 110 is a conductive material, and the substrate 110 is used as the first electrode plate layer of the capacitor structure, and the capacitor structure further includes a dielectric layer and a second electrode plate layer which are sequentially stacked on the trench 122 and the support structure 121.
[0073] It should be noted that the substrate is used as the first electrode plate layer of the capacitor structure in the embodiment, and the arrangement and shape of the trenches and the support structures are the same as those in Embodiment 3. For details, please refer to Embodiment 3.
[0074] The present disclosure proposes a MEMS three-dimensional capacitor, which has the following beneficial effects compared with the prior art: the present disclosure can effectively improve the facing area of the electrode plate in the capacitor structure by arranging support structures in the trench area and designing the plurality of support structures as cross-shaped or trident-shaped and arraying the plurality of support structures, thereby improving the capacitance value of the MEMS three-dimensional capacitor, and combining the advantages of the MEMS capacitor itself, the capacitor with low impedance, low leakage, high capacitance value density and other advantages can be prepared, and can be applied to different packaging size types.
[0075] It can be understood that the above embodiments are only exemplary embodiments adopted for illustrating the principles of the present disclosure, and the present disclosure is not limited thereto. Various modifications and improvements can be made by those of ordinary skill in the art without departing from the spirit and essence of the present disclosure, and these modifications and improvements are also considered as the protection scope of the present disclosure.
Claims
1. A MEMS three-dimensional capacitor, characterized by, The substrate with a trench region is provided with a plurality of support structures and trenches surrounding the support structures, the support structures include first support portions arranged at least in a first direction and second support portions arranged in a second direction, and the first support portions and the second support portions are cross-connected; At least one layer of a capacitor structure, the capacitor structure includes a first electrode layer, a dielectric layer and a second electrode layer which are sequentially stacked on the trenches and the support structures. The support structures include first support portions arranged in a first direction and second support portions arranged in a second direction which are cross-connected; wherein, 2. The MEMS three-dimensional capacitor of claim 1, wherein, The included angle between the first direction and the second direction is 60°-120°. The included angle between the first direction and the second direction is 90°.
3. The MEMS three-dimensional capacitor of claim 2, wherein, The cross section of the support structure is cross-shaped.
4. The MEMS three-dimensional capacitor of claim 3, wherein, The end portions and the cross-connection portions of the first support portions and the second support portions are circular-arc-shaped.
5. The MEMS three-dimensional capacitor of claim 1, wherein, The support structures include first support portions arranged in a first direction, second support portions arranged in a second direction and third support portions arranged in a third direction which are cross-connected; wherein, 6. The MEMS three-dimensional capacitor of claim 1, wherein, The included angles between the first direction, the second direction and the third direction are the same or different. The included angles between the first direction, the second direction and the third direction are all equal.
7. The MEMS three-dimensional capacitor of claim 6, wherein, The end portions and the cross-connection portions of the first support portions, the second support portions and the third support portions are circular-arc-shaped.
8. The MEMS three-dimensional capacitor of claim 7, wherein, The substrate with a trench region is provided with a plurality of support structures and trenches surrounding the support structures, the support structures include first support portions arranged at least in a first direction and second support portions arranged in a second direction, and the first support portions and the second support portions are cross-connected; 9. A MEMS three-dimensional capacitor, characterized by The substrate is made of conductive material; At least one layer of a capacitor structure, the substrate serves as a first electrode layer of the capacitor structure, and the capacitor structure further includes a dielectric layer and a second electrode layer which are sequentially stacked on the trenches and the support structures. The plurality of support structures are arranged in an array; wherein, The plurality of support structures arranged in adjacent two rows are alternately and spacedly arranged; 10. The MEMS three-dimensional capacitor according to any one of claims 1 to 9, wherein, The plurality of support structures arranged in adjacent two columns are alternately and spacedly arranged.