Novel power module packaging module

Abstract

The utility model relates to a novel power module packaging module, which comprises a substrate and a plurality of groups of chip units arranged on the substrate, each chip unit is composed of at least one SiC MOSFET chip unit and at least one si IGBT chip unit, each SiC MOSFET chip unit and each si IGBT chip unit are mutually independent, each group of chip units is composed of a plurality of groups of chip units, each group of chip units is composed of a plurality of groups of chip units, and each group of chip units is composed of a plurality of groups of chip units. And the independent SiC MOSFET chip units and the independent si IGBT chip units are connected with the substrate at the bottom through soft soldering or a silver sintering process. The utility model has the advantages that the structure adapts to the high working junction temperature environment of the SiC chip and the IGBT chip module, the junction temperature distribution of the chip body is uniform, the near-chip end connection is high in reliability, the conduction voltage of the IGBT chip is reduced under high current, the conduction voltage of the mosfet is reduced under low current, and the performance limits of the IGBT chip and the mosfet are developed in combination with different gate-level time sequence control.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the field of power electronics, more particularly to a novel power module packaging module. BACKGROUND

[0002] At present, the application of field effect transistor modules in the field of electric vehicles is more and more extensive. In the above-mentioned various fields, the requirements for the volume, power density, reliability and other aspects of power semiconductor devices are becoming more and more stringent.

[0003] In traditional power semiconductor module packaging, in order to balance the good reliability and heat dissipation conditions, as well as the power density, the power semiconductor module is constantly becoming larger in size for higher power density, and the requirements for external heat sink conditions and installation are also constantly increasing. The SI-based IGBT power semiconductor module of the traditional packaging has the disadvantages of high conduction loss at low current and high switching loss at high current. The SIC-based mosfet power semiconductor module of the traditional packaging has the disadvantage of high conduction loss at high current. In order to maximize the benefits, a new type of power module needs to be developed to meet this characteristic. Therefore, a novel power module packaging module is designed. SUMMARY

[0004] The utility model aims at overcoming the shortcomings of the prior art, and provides a novel power module packaging module which is simple and reasonable in structure, stable in operation, safe and reliable, has SiC characteristics at low current, low on-resistance at high current, and low cost.

[0005] The utility model is realized through the following technical scheme: a novel power module packaging module, comprising a substrate and a plurality of chip units arranged on the substrate, wherein the chip units are composed of at least one SiC MOSFET chip unit and at least one si IGBT chip unit, each SiC MOSFET chip unit and si IGBT chip unit are independent of each other, and the independent SiC MOSFET chip unit and independent si IGBT chip unit are connected with the substrate at the bottom through soft soldering or silver sintering process.

[0006] As a preferred embodiment, the SiC MOSFET chip unit is composed of a SIC-based mosfet chip, a copper terminal and a Si3N4 insulating ceramic substrate, the SIC-based mosfet chip is mounted on the Si3N4 insulating ceramic substrate, and the copper terminal is arranged on the SIC-based mosfet chip;

[0007] The si IGBT chip unit is composed of an IGBT chip based on SI, a FWD chip based on SI, a copper terminal and a Si3N4 insulating ceramic substrate, the IGBT chip based on SI and the FWD chip based on SI are mounted on the Si3N4 insulating ceramic substrate, and the copper terminal is arranged on the FWD chip based on SI; the SIC-based mosfet chip and the SI-based IGBT chip, and the SI-based FWD chip are connected with the bottom substrate by the Si3N4 insulating ceramic substrate through soft soldering or silver sintering process.

[0008] As preferred: the SiC MOSFET chip unit and the si IGBT chip unit are both plastic encapsulated by epoxy plastic encapsulating material.

[0009] As preferred: the substrate is a heat dissipation copper substrate, and a Pinfin heat dissipation structure is arranged on the heat dissipation copper substrate, and water cooling heat dissipation is performed through the Pinfin heat dissipation structure and the cooling liquid.

[0010] As preferred: the substrate is an aluminum heat dissipation substrate.

[0011] As preferred: the silver sintering process on the substrate uses silver paste or silver film as the silver sintering material, the highest temperature of silver sintering is controlled to be between 200 DEG C and 400 DEG C, the sintering pressure is controlled to be between 5 Mpa and 50 Mpa, and the highest temperature of tin soldering process is controlled to be between 200 DEG C and 300 DEG C.

[0012] As preferred: the SiC MOSFET chip unit and the si IGBT chip unit are alternately arranged, and are arranged in two rows and twelve columns on the substrate.

[0013] The power semiconductor module new packaging module has the characteristics of low on-resistance under large current and SiC characteristics under small current, and can solve the problems of low conversion efficiency, large module size and high cost in the prior art.

[0014] The power semiconductor module new packaging module has the characteristics of low on-resistance under large current and SiC characteristics under small current, and can solve the problems of low conversion efficiency, large module size and high cost in the prior art. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1 It is a front appearance view of the utility model.

[0016] Figure 2 It is a back appearance view of the utility model.

[0017] Figure 3 It is a side appearance view of the utility model.

[0018] Figure 4 It is a circuit structure schematic view of the utility model.

[0019] Figure 5 It is the internal schematic view of independent SiC MOSFET chip unit in the utility model.

[0020] Figure 6 It is the internal schematic view of independent SI IGBT chip unit in the utility model. DETAILED DESCRIPTION

[0021] In order to make those skilled in the art more clearly understand the purpose, technical scheme and advantages of the utility model, the utility model is further described below in conjunction with the drawings and examples.

[0022] In the description of the utility model, it is understood that the orientation or positional relationship indicated by the terms such as "up", "down", "left", "right", "inner", "outer", "horizontal", "vertical" is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the utility model, and does not indicate or imply that the indicated device or element must have a particular orientation, therefore, it cannot be understood as the limitation of the utility model.

[0023] The utility model will be described in detail below in conjunction with the drawings: as Figures 1-4 The chip unit is composed of at least one SiC MOSFET chip unit 2 and at least one si IGBT chip unit 3, each SiC MOSFET chip unit 2 and si IGBT chip unit 3 are independent of each other, and the independent SiC MOSFET chip unit 2 and independent si IGBT chip unit 3 are connected with the bottom substrate 1 through soft solder welding or silver sintering process.

[0024] As Figure 5 The SiC MOSFET chip unit 2 is composed of SIC-based mosfet chip 4, copper terminal 5, Si3N4 insulating ceramic substrate 6, the SIC-based mosfet chip is installed on Si3N4 insulating ceramic substrate 6, and copper terminal 5 is arranged on SIC-based mosfet chip 4.

[0025] As Figure 6As shown, the si IGBT chip unit 3 is composed of an SI-based IGBT chip 7, an SI-based FWD chip 8, a copper terminal 5 and a Si3N4 insulating ceramic substrate 6, the SI-based IGBT chip 7 and the SI-based FWD chip 8 are mounted on the Si3N4 insulating ceramic substrate 6, and the copper terminal 5 is arranged on the SI-based FWD chip 8; the SiC-based MOSFET chip 4 and the SI-based IGBT chip 7, the SI-based FWD chip 8 are connected with the bottom substrate 1 through the Si3N4 insulating ceramic substrate 6 by means of soft soldering or silver sintering process. The SiC MOSFET chip unit 2 and the si IGBT chip unit 3 are both plastic encapsulated by epoxy plastic encapsulating material.

[0026] The substrate 1 can be a heat dissipation copper substrate, and a Pinfin heat dissipation structure 9 is arranged on the heat dissipation copper substrate, and the Pinfin heat dissipation structure 9 is in contact with cooling liquid for water cooling heat dissipation. The substrate 1 can also be an aluminum heat dissipation substrate.

[0027] The silver sintering process on the substrate 1 uses silver paste or silver film as the silver sintering material, the highest temperature of silver sintering is controlled to be between 200-400 DEG C, the sintering pressure is controlled to be between 5 Mpa and 50 Mpa, and the highest temperature of tin soldering process is controlled to be between 200-300 DEG C.

[0028] Each SiC MOSFET chip unit 2 and each si IGBT chip unit 3 are alternately arranged, and are arranged in two rows and twelve columns on the substrate 1. Of course, the number and position of the SiC MOSFET chip unit and the si IGBT chip unit can be adjusted according to actual needs, and are not limited in any way.

[0029] The packaging module structure of the power semiconductor module provided by the utility model, wherein the back of the independent SiC MOSFET chip unit and the independent si IGBT chip unit can be connected with the heat dissipation copper substrate by silver sintering process, and the silver sintering connection material has a melting point of more than 900 DEG C, the working temperature is greatly improved, and the material performance itself has the characteristics of high reliability and strong temperature cycle resistance, thereby improving the module power cycle and temperature cycle capacity; the SiC MOSFET chip, the IGBT chip and the diode chip are mixed and packaged, so that the benefits are maximized, and the SiC characteristics are combined with low conduction resistance under small current.

[0030] The specific embodiments described herein are merely illustrative of the principles of the present application and its efficacy, and are not intended to limit the present application. Any person skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present application. Therefore, all equivalent modifications or changes made by those skilled in the art without departing from the spirit and technical concept disclosed by the present application shall be covered by the claims of the present application.

Claims

1. A novel power module package module, comprising a substrate (1) and a plurality of chip units arranged on the substrate (1), characterized in that: The chip unit is composed of at least one SiC MOSFET chip unit (2) and at least one si IGBT chip unit (3), each SiC MOSFET chip unit (2) and si IGBT chip unit (3) is independent of each other, and the independent SiC MOSFET chip unit (2) and the independent si IGBT chip unit (3) are connected with the bottom substrate (1) through soft solder welding or silver sintering process; the SiC MOSFET chip unit (2) is composed of a SIC-based mosfet chip (4), a copper terminal (5), and a Si3N4 insulating ceramic substrate (6), the SIC-based mosfet chip is mounted on the Si3N4 insulating ceramic substrate (6), and the copper terminal (5) is arranged on the SIC-based mosfet chip (4); the si IGBT chip unit (3) is composed of a SI-based IGBT chip (7), a SI-based FWD chip (8), a copper terminal (5), and a Si3N4 insulating ceramic substrate (6), the SI-based IGBT chip (7) and the SI-based FWD chip (8) are mounted on the Si3N4 insulating ceramic substrate (6), and the copper terminal (5) is arranged on the SI-based FWD chip (8); the SIC-based mosfet chip (4) and the SI-based IGBT chip (7) and the SI-based FWD chip (8) are connected with the bottom substrate (1) through the Si3N4 insulating ceramic substrate (6) by soft solder welding or silver sintering process; the substrate (1) is a heat dissipation copper substrate, and a Pinfin heat dissipation structure (9) is arranged on the heat dissipation copper substrate, and the Pinfin heat dissipation structure (9) is in contact with cooling liquid for water cooling heat dissipation.

2. The novel power module package module according to claim 1, characterized in that: The SiC MOSFET chip unit (2) and the si IGBT chip unit (3) are both plastic encapsulated by using epoxy plastic encapsulating material.

3. The novel power module package module according to claim 1, characterized in that: The substrate (1) is an aluminum heat dissipation substrate.

4. The novel power module package module according to claim 1 or 3, characterized in that: The silver sintering process on the substrate (1) uses silver paste or silver film as silver sintering material.

5. The novel power module package module according to claim 1, characterized in that: Each SiC MOSFET chip unit (2) and each si IGBT chip unit (3) are alternately arranged, and are arranged in two rows and twelve columns on the substrate (1). The substrate (1) is an aluminum heat dissipation substrate. The silver sintering process on the substrate (1) uses silver paste or silver film as silver sintering material. Each SiC MOSFET chip unit (2) and each si IGBT chip unit (3) are alternately arranged, and are arranged in two rows and twelve columns on the substrate (1).

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