Heating body and heating non-combustion atomization equipment

Abstract

The utility model relates to the technical field of atomization equipment, and provides a heating body and heating non-combustion atomization equipment. The heating body comprises a heating structure, the heating structure comprises a heating resistance layer and electrode layers, the heating resistance layer is of a lightly doped semiconductor structure, the electrode layers are arranged on the two sides of the heating resistance layer in the thickness direction, and the electrode layers are used for being electrically connected with a power supply device so that the heating resistance layer can emit heat in the power-on state; and the substrate is arranged on one side of the heating structure in the thickness direction and is fixedly connected with the heating structure. According to the technical scheme, the heating resistance layer of the lightly doped semiconductor structure is adopted, when the heating resistance layer is applied to the heating non-combustion atomization equipment, external dry baking heating and infrared radiation heating can be formed on the aerosol generation rod at the same time, the heating coverage range is more comprehensive, the temperature difference between the interior and the exterior of the aerosol generation rod can be reduced, and the heating uniformity is improved; and the whole structure is simple, the occupied space is small, and the space layout in the heating cavity of the atomization equipment is facilitated.

Description

Technical Field

[0001] This application relates to the field of atomization equipment technology, specifically to a heating element and a heated non-combustible atomization device. Background Technology

[0002] Currently, common heated non-combustible atomization devices typically use metal or ceramic heating elements to heat the aerosol generating rod, causing the atomizing matrix within to atomize and generate aerosol. However, since the heating element is usually located on the outside of the aerosol generating rod, there is a difference in the amount of heat received inside and outside the rod during heating, resulting in uneven heating and affecting atomization efficiency. To address this, related technologies have proposed adding auxiliary heating pins or similar structures inserted into the aerosol generating rod to improve the uneven heating problem. However, in these solutions, the added auxiliary heating pins or similar structures increase the complexity of the overall heating assembly. Furthermore, the auxiliary heating pins require a certain amount of space, which is not conducive to spatial layout. Additionally, due to the limited space in the heating chamber, the coverage area of ​​the auxiliary heating pins is limited, and the improvement effect on heating uniformity remains relatively limited. Utility Model Content

[0003] To address the problems of uneven heating, complex heating element structure, and unfavorable spatial layout in existing heated non-combustible atomizing devices, this application provides a heating element and a heated non-combustible atomizing device.

[0004] An embodiment of the first aspect of the technical solution of this application provides a heating element, including: a heating structure, the heating structure including a heating resistor layer and an electrode layer, the heating resistor layer being a lightly doped semiconductor structure, and the heating resistor layer having electrode layers on both sides in the thickness direction, the electrode layers being used to electrically connect to a power supply device so as to cause the heating resistor layer to heat up when energized; and a substrate, the substrate being disposed on one side of the heating structure in the thickness direction and fixedly connected to the heating structure.

[0005] In a further embodiment of this application, the heating resistor layer is any one of an N-type lightly doped silicon layer structure, a P-type lightly doped silicon layer structure, an N-type lightly doped germanium layer structure, or a P-type lightly doped germanium layer structure.

[0006] In a further embodiment of this application, the heating structure further includes: a first auxiliary layer, which is formed on at least one side surface of the heating resistor layer in the thickness direction, and the first auxiliary layer is located between the electrode layer and the heating resistor layer on the corresponding side; wherein the first auxiliary layer is a heavily doped semiconductor structure, and the substrate type and doping type of the first auxiliary layer are consistent with those of the heating resistor layer; and / or, a second auxiliary layer, which is connected to at least one side of the heating resistor layer in the thickness direction, and the second auxiliary layer is located between the electrode layer and the heating resistor layer on the corresponding side; wherein the second auxiliary layer is an ITO transparent oxide conductive layer.

[0007] In a further embodiment of this application, a first auxiliary layer is formed on one side surface of the heating resistor layer in the thickness direction, and the first auxiliary layer is located between the electrode layer and the heating resistor layer on the corresponding side. A second auxiliary layer is connected to the side of the heating resistor layer away from the first auxiliary layer in the thickness direction, and the second auxiliary layer is located between the electrode layer and the heating resistor layer on the corresponding side. Alternatively, at least one side of the heating resistor layer in the thickness direction may simultaneously have a first auxiliary layer and a second auxiliary layer, the first auxiliary layer is formed on the side surface of the heating resistor layer, the second auxiliary layer is connected to the side of the first auxiliary layer away from the heating resistor layer, and the electrode layer on the corresponding side is connected to the side of the second auxiliary layer away from the first auxiliary layer.

[0008] In a further embodiment of this application, the heating resistor layer is an N-type lightly doped silicon layer structure formed by doping silicon with pentavalent donor impurities, and the first auxiliary layer is an N-type heavily doped silicon layer structure formed by doping silicon with pentavalent donor impurities; or, the heating resistor layer is a P-type lightly doped silicon layer structure formed by doping silicon with trivalent donor impurities, and the first auxiliary layer is a P-type heavily doped silicon layer structure formed by doping silicon with trivalent donor impurities; or, the heating resistor layer is an N-type lightly doped germanium layer structure formed by doping germanium with pentavalent donor impurities, and the first auxiliary layer is an N-type heavily doped germanium layer structure formed by doping germanium with pentavalent donor impurities; or, the heating resistor layer is a P-type lightly doped germanium layer structure formed by doping germanium with trivalent donor impurities, and the first auxiliary layer is a P-type heavily doped germanium layer structure formed by doping germanium with trivalent donor impurities.

[0009] In a further embodiment of this application, the surface of the heating resistor layer is ground and polished, and the thickness of the heating resistor layer is in the range of 50μm to 300μm.

[0010] In a further embodiment of this application, the substrate is a glass substrate; or, the substrate is a metal substrate, and the substrate has a hollow structure.

[0011] In a further embodiment of this application, the substrate is a cylindrical structure, and the heating structure is connected to the outer wall of the substrate; or, the substrate is an arc-shaped plate structure or a planar plate structure, and the heating structure is connected to one side of the substrate.

[0012] In a further embodiment of this application, the heating structure and the substrate are encapsulated and connected by any one of the following methods: brazing, fusion, thermal bonding or adhesive bonding; and / or, the electrode layer is formed by connecting metal electrodes to the surface of the heating resistor layer by printing and sintering.

[0013] An embodiment of the second aspect of the technical solution of this application provides a heated non-combustible atomizing device, comprising: a device body having a heating chamber for accommodating an aerosol generating rod; a heating element as described in any embodiment of the first aspect, the heating element being disposed in the heating chamber for heating the aerosol generating rod; and a power supply device being disposed in the device body and electrically connected to the heating element.

[0014] The beneficial effects of the above-mentioned technical solution of this application are as follows:

[0015] The heating element in this application, through structural improvement and optimization, adopts a heating resistor layer with a lightly doped semiconductor structure. When applied to a heating non-combustible atomization device, it can simultaneously form external dry heating and infrared radiation heating for the aerosol generating rod, resulting in a more comprehensive heating coverage. This helps to reduce the temperature difference between the inside and outside of the aerosol generating rod, significantly improves the uniformity of heating, and the overall structure of the heating element is relatively simple, occupying little space, which is beneficial to the spatial layout of the heating chamber of the atomization device. Attached Figure Description

[0016] Figure 1 This is a cross-sectional schematic diagram of the heating element in one embodiment of this application;

[0017] Figure 2 This is a cross-sectional schematic diagram of the heating element in another embodiment of this application;

[0018] Figure 3 This is a cross-sectional schematic diagram of the heating element in another embodiment of this application;

[0019] Figure 4 This is a cross-sectional schematic diagram of the heating element in another embodiment of this application;

[0020] Figure 5 This is a cross-sectional schematic diagram of the heating element in another embodiment of this application;

[0021] Figure 6 This is a cross-sectional schematic diagram of the heating element in another embodiment of this application;

[0022] Figure 7 This is a cross-sectional schematic diagram of the heating element in another embodiment of this application;

[0023] Figure 8 This is a cross-sectional schematic diagram of the heating element in another embodiment of this application;

[0024] Figure 9 This is a three-dimensional schematic diagram of a heating element in one embodiment of this application;

[0025] Figure 10 This is a three-dimensional schematic diagram of the heating element in another embodiment of this application;

[0026] Figure 11 This is a three-dimensional schematic diagram of the heating element in another embodiment of this application;

[0027] Figure 12 This is a schematic diagram of the internal structure of a heated non-combustible atomizing device according to one embodiment of this application.

[0028] Explanation of reference numerals in the attached figures:

[0029] 100 Heating element, 1 Heating structure, 11 Heating resistor layer, 12 Electrode layer, 13 First auxiliary layer, 14 Second auxiliary layer, 2 Substrate, 221 Hollow structure;

[0030] 400 Heated non-combustible atomizing device, 410 Device body, 411 Heating chamber, 412 Vent hole, 413 Heat insulation sleeve, 420 Power supply device, 421 Battery, 422 Control board; 500 Aerosol generating rod. Detailed Implementation

[0031] The present application will now be described in further detail with reference to the accompanying drawings and specific embodiments. Similar elements in different embodiments are referred to by related similar element reference numerals. In the following embodiments, many details are described to facilitate a better understanding of the present application. However, those skilled in the art will readily recognize that some features may be omitted in different situations, or may be replaced by other elements, materials, or methods. In some cases, certain operations related to the present application are not shown or described in the specification. This is to avoid obscuring the core parts of the present application with excessive description. For those skilled in the art, detailed description of these related operations is not necessary; they can fully understand the related operations based on the description in the specification and general technical knowledge in the art.

[0032] Furthermore, the features, operations, or characteristics described in the specification can be combined in any suitable manner to form various embodiments, and the operational steps involved in each embodiment can also be rearranged or adjusted in a manner that is obvious to those skilled in the art. Therefore, the specification and drawings are only for clearly describing a particular embodiment and do not imply that they represent the necessary components and / or order.

[0033] The serial numbers assigned to components in this document, such as "first" and "second," are used only to distinguish the described objects and have no sequential or technical meaning. The terms "connection" and "linkage" used in this application, unless otherwise specified, include both direct and indirect connections (linkages).

[0034] An aerosol generator is a special atomizing product containing an atomizing matrix. During use, it is inserted into a matching heated non-combustible atomizing device. A heating element heats the aerosol generator, causing the atomizing matrix inside to atomize and generate an aerosol. As the user draws in air from the aerosol generator, the aerosol is carried to the suction end by the airflow. The atomizing matrix needs to reach a specific temperature to atomize, but the temperature cannot be too high to avoid localized scorching. Therefore, ensuring even heating of the aerosol generator directly affects its atomization effect.

[0035] The heating element provided in this application features structural improvements and optimizations. It employs a lightly doped semiconductor structure as the heating resistance layer, uses an electrode layer as the electrical connection structure, and utilizes a substrate as the support structure. When applied in a heated non-combustible atomizing device, the heating structure can be energized and heated through the electrode layer. Utilizing the unique properties of the lightly doped semiconductor structure, it simultaneously provides dry-heating to the exterior of the aerosol generating rod and generates infrared radiation heating to the interior, resulting in comprehensive heating coverage and more uniform heating throughout the aerosol generating rod, thus improving the atomization effect.

[0036] The following describes some embodiments of the heating element and the heated non-combustible atomizing device provided in this application, with reference to the accompanying drawings.

[0037] The first aspect of this application provides a heating element 100, such as... Figure 1 As shown, the heating element 100 includes a heating structure 1 and a substrate 2. In the thickness direction, the heating structure 1 is fixedly connected to one side of the substrate 2, forming a stacked arrangement to support the heating structure 1 via the substrate 2. The heating structure 1 includes a heating resistor layer 11 and an electrode layer 12 stacked in the thickness direction. The heating resistor layer 11 is a lightly doped semiconductor structure, and electrode layers 12 are connected to both sides of the heating resistor layer 11 in the thickness direction. When applied in an atomizing device, the electrode layers 12 are electrically connected to a power supply device, so that the heating resistor layer 11 heats up when energized, thereby heating the aerosol generating rod.

[0038] Among them, since the resistivity of the lightly doped semiconductor structure is relatively large, the corresponding heat generation is high. When used to heat the heating structure 1 of the non-combustible atomizing device 400, its thermal radiation band is mainly concentrated in the infrared to far-infrared region, which can produce an infrared heating effect on the aerosol generating rod. The radiation rays can penetrate the aerosol generating rod and effectively heat the internal atomizing matrix.

[0039] It is understandable that existing heated non-combustible atomizing devices typically use metal or ceramic heating elements 100 for heating. The heating elements are often arranged using side heating or a combination of side heating and central auxiliary heating. However, with side heating alone, there is a temperature difference between the inside and outside of the aerosol generating rod, resulting in poor heating uniformity. Using a combination of side heating and central auxiliary heating requires additional structures such as auxiliary heating needles, which are inserted into the aerosol generating rod to increase the internal heating temperature. However, due to the small size of the heated non-combustible atomizing device 400, the space within its heating chamber is limited. Adding auxiliary heating needles and other structures is detrimental to the internal space layout of the device, and the limited space restricts the coverage area of ​​the auxiliary heating needles, leaving some areas difficult to cover, thus limiting the effect on improving heating uniformity.

[0040] The heating element 100 in this embodiment has been improved and optimized in structure, and adopts a heating resistor layer 11 with a lightly doped semiconductor structure. When applied to a heating non-combustible atomization device, it can simultaneously form external heating and infrared radiation heating for the aerosol generating rod, with a more comprehensive heating coverage. This helps to reduce the temperature difference between the inside and outside of the aerosol generating rod, greatly improves the uniformity of heating, and the overall structure of the heating element is relatively simple, occupying little space, which is beneficial to the spatial layout of the heating chamber of the atomization device.

[0041] It should be noted that, Figure 1 The cross-sectional shape of the heating element 100 in the thickness direction is only shown in the diagram; the overall shape and structure of the heating element 100 are not limited to this. Figure 1 In the example, in practical applications, the heating element 100 can be configured as a planar structure, a curved structure, or other structural forms suitable for heating the aerosol generating rod, depending on the needs of use; when applied to the heating non-combustible atomizing device 400, one or more heating elements 100 as in this embodiment can be configured as needed.

[0042] In further embodiments of this application, such as Figure 1 In the example, in the heating element 100, the heating resistor layer 11 can be made of silicon-based material or germanium-based material. Specifically, when using silicon-based material, the heating resistor layer 11 can be an N-type lightly doped silicon layer structure or a P-type lightly doped silicon layer structure; when using germanium-based material, the heating resistor layer 11 can be an N-type lightly doped germanium layer structure or a P-type lightly doped germanium layer structure. During processing, an N-type lightly doped silicon-based structure can be formed by doping silicon with pentavalent element (e.g., phosphorus) donor impurities, or a P-type lightly doped silicon-based structure can be formed by doping silicon with trivalent element (e.g., boron) donor impurities, or an N-type lightly doped germanium-based structure can be formed by doping germanium with pentavalent element (e.g., phosphorus) donor impurities, or a P-type lightly doped germanium-based structure can be formed by doping germanium with trivalent element (e.g., boron or aluminum) donor impurities.

[0043] It is understandable that silicon and germanium are both semiconductor materials. The resistivity of the lightly doped silicon and germanium layer structures formed by these materials is relatively high, exceeding that of conventional solar silicon wafers by 2 to 5 orders of magnitude, typically ranging from 1 Ω·cm to 4000 Ω·cm. This results in high heat generation when energized, effectively improving heating efficiency when applied to the heated non-combustible atomizing device 400. Specifically, lightly doped silicon or germanium layer structures with resistivity between 10 Ω·cm and 4000 Ω·cm can be selected as the heating resistance layer, balancing heating performance and manufacturing cost. Furthermore, within the stable operating range of the heated non-combustible atomizing device 400, the thermal radiation band of the lightly doped silicon and germanium layer structures is in the infrared to far-infrared region, conforming to the infrared auxiliary heating law, and can provide infrared auxiliary heating effect for the aerosol generating rod.

[0044] When using silicon-based materials, the lifespan and heat dissipation performance of the N-type lightly doped silicon layer structure are superior to those of the P-type lightly doped silicon layer structure. Similarly, when using germanium-based materials, the lifespan and heat dissipation performance of the N-type lightly doped germanium layer material are superior to those of the P-type lightly doped layer material. Since the cost of silicon is much lower than that of germanium, using a lightly doped silicon layer structure can significantly reduce manufacturing costs compared to a lightly doped germanium layer structure.

[0045] In further embodiments of this application, such as Figure 2 and Figure 3 In the example, the heating structure 1 of the heating element 100 includes a heating resistor layer 11, an electrode layer 12, and a first auxiliary layer 13. Electrode layers 12 are disposed on both sides of the heating resistor layer 11. The first auxiliary layer 13 is a heavily doped semiconductor structure. In the thickness direction, the first auxiliary layer 13 is formed on at least one surface of the heating resistor layer 11, and is located between the electrode layer 12 and the heating resistor layer 11 on the corresponding side. This allows the formation of an ohmic contact by utilizing the low contact resistance between the heavily doped semiconductor structure and the metal (for example, the resistivity of an N-type heavily doped silicon layer is typically 0.2 Ω·cm to 2 Ω·cm, much lower than that of a lightly doped N-type silicon layer), which enhances conductivity and extends service life.

[0046] In practical applications, a first auxiliary layer 13 can be provided on one side of the heating resistor layer 11 (e.g., ...) as needed. Figure 2 (as shown in the example), or a first auxiliary layer 13 can be provided on both sides of the heating resistor layer 11 (such as...). Figure 3 (Example in the text).

[0047] In further embodiments of this application, such as Figure 4 and Figure 5In the example shown, the heating structure 1 of the heating element 100 includes a heating resistor layer 11, an electrode layer 12, and a second auxiliary layer 14. Electrode layers 12 are disposed on both sides of the heating resistor layer 11. The second auxiliary layer 14 is an ITO (Indium Tin Oxide) transparent oxide conductive layer, which is stacked and connected to the heating resistor layer 11. In the thickness direction, the second auxiliary layer 14 is connected to at least one side of the heating resistor layer 11, and is located between the electrode layer 12 and the heating resistor layer 11 on the corresponding side. The ITO transparent oxide conductive layer has a low thermal conductivity, approximately 0.1 W / (m·K) to 1.5 W / (m·K), which is much lower than the thermal conductivity of metal electrodes. This significantly reduces heat loss during energization, which is beneficial for further improving heating efficiency. Simultaneously, the ITO transparent oxide conductive layer also has good light transmittance, which can avoid obstructing or interfering with the thermal radiation of the heating resistor layer 11.

[0048] In practical applications, a second auxiliary layer 14 can be provided on one side of the heating resistor layer 11 as needed (e.g., Figure 4 (as shown in the example), a second auxiliary layer 14 can also be provided on both sides of the heating resistor layer 11 (such as...). Figure 5 (Example in the text).

[0049] Furthermore, the heating structure 1 of the heating element 100 may also have a first auxiliary layer 13 and a second auxiliary layer 14.

[0050] In a specific example, such as Figure 6 In the example shown, a first auxiliary layer 13 is formed on one side surface of the heating resistor layer 11 in the thickness direction, and a second auxiliary layer 14 is correspondingly connected to the other side of the heating resistor layer 11. The first auxiliary layer 13 is located between the electrode layer 12 and the heating resistor layer 11 on the corresponding side, while the second auxiliary layer 14 is located between the electrode layer 12 and the heating resistor layer 11 on the other side, so that the first auxiliary layer 13 and the second auxiliary layer 14 are separated by the heating resistor layer 11. This arrangement enables the heating structure 1 to simultaneously achieve ohmic contact and reduce heat loss during power-on.

[0051] In another specific example, such as Figure 7 and Figure 8In the example shown, the heating resistor layer 11 has a first subsidiary layer 13 and a second subsidiary layer 14 on at least one side in the thickness direction. Both the first subsidiary layer 13 and the second subsidiary layer 14 are located between the electrode layer 12 and the heating resistor layer 11 on the corresponding side. The first subsidiary layer 13 is formed on the side surface of the heating resistor layer 11, and the second subsidiary layer 14 is connected to the side of the first subsidiary layer 13 facing away from the heating resistor layer 11. The electrode layer 12 on the corresponding side is connected to the side of the second subsidiary layer 14 facing away from the first subsidiary layer 13. This arrangement enables the heating structure 1 to achieve ohmic contact and reduce heat loss on the same side.

[0052] In practical applications, a first auxiliary layer 13 and a second auxiliary layer 14 can be provided on one side of the heating resistor layer 11 as needed (e.g., Figure 7 (Example in the text), that is, the electrode layer 12, the heating resistor layer 11, the first auxiliary layer 13, the second auxiliary layer 14, and the electrode layer 12 are arranged sequentially in the thickness direction; of course, the first auxiliary layer 13 and the second auxiliary layer 14 can also be provided on both sides of the heating resistor layer 11 (e.g. Figure 8 (Example in the text), that is, electrode layer 12, second auxiliary layer 14, first auxiliary layer 13, heating resistor layer 11, first auxiliary layer 13, second auxiliary layer 14, and electrode layer 12 are arranged sequentially in the thickness direction.

[0053] In a further embodiment of this application, during the manufacturing process, the heating structure 1 can be processed in different ways depending on the base material and doping type of the heating resistor layer 11. For example, when the heating resistor layer 11 is an N-type lightly doped silicon layer structure, N-type lightly doped silicon smelting can be performed first. Specifically, pentavalent elements such as phosphorus can be doped into the silicon material as donor impurities to form electronic conductivity. Then, the formed N-type lightly doped silicon layer structure is sliced ​​and polished. After that, double-sided metal electrode printing and sintering are performed on the N-type lightly doped silicon layer structure to form the electrode layer 12. When the heating structure 1 is also provided with a first auxiliary layer 13, during the above processing, after polishing the N-type lightly doped silicon layer structure, phosphorus oxychloride can be applied to the surface of the N-type lightly doped silicon layer structure to perform phosphorus diffusion to form an N-type heavily doped silicon layer structure. Then, double-sided metal electrode printing and sintering are performed.

[0054] When the heating resistor layer 11 is a P-type lightly doped silicon layer structure, P-type lightly doped silicon smelting can be performed first. Specifically, pentavalent elements such as boron can be doped into the silicon material as donor impurities to form electronic conductivity. Then, the formed P-type lightly doped silicon layer structure is sliced ​​and polished. After that, double-sided metal electrode printing and sintering are performed on the P-type lightly doped silicon layer structure to form electrode layer 12. When the heating structure 1 is also provided with a first auxiliary layer 13, in the above processing, after the P-type lightly doped silicon layer structure is polished, boron tribromide can be applied to the surface of the P-type lightly doped silicon layer structure to perform boron diffusion operation to form P-type heavily doped silicon layer structure. Then, double-sided metal electrode printing and sintering are performed.

[0055] Similarly, when the heating resistor layer 11 of the heating structure 1 adopts an N-type lightly doped germanium layer structure, N-type lightly doped germanium smelting can be performed first. Specifically, pentavalent elements such as phosphorus can be doped into silicon material as donor impurities to form electronic conductivity. Then, the formed N-type lightly doped germanium layer structure is sliced ​​and polished. After that, double-sided metal electrode printing and sintering are performed on the N-type lightly doped germanium layer structure to form electrode layer 12. When the heating structure 1 is also provided with a first auxiliary layer 13, in the above processing, after polishing the N-type lightly doped germanium layer structure, phosphorus oxychloride can be applied to the surface of the N-type lightly doped germanium layer structure to perform phosphorus diffusion operation to form N-type heavily doped germanium layer structure. Then, double-sided metal electrode printing and sintering are performed.

[0056] When the heating resistor layer 11 is a P-type lightly doped germanium layer structure, P-type lightly doped germanium smelting can be performed first. Specifically, pentavalent elements such as boron can be doped into silicon material as donor impurities to form electronic conductivity. Then, the formed P-type lightly doped germanium layer structure is sliced ​​and polished. After that, double-sided metal electrode printing and sintering are performed on the P-type lightly doped germanium layer structure to form electrode layer 12. When the heating structure 1 is also provided with a first auxiliary layer 13, in the above processing, after the P-type lightly doped germanium layer structure is polished, boron tribromide can be applied to the surface of the P-type lightly doped germanium layer structure to perform boron diffusion operation to form P-type heavily doped germanium layer structure. Then, double-sided metal electrode printing and sintering are performed.

[0057] Through manufacturing processes, the performance of the heating structure 1 can be effectively improved. Taking the heating resistor layer 11 as an example of an N-type lightly doped crystalline silicon layer structure, its resistivity is 2 to 5 orders of magnitude higher than that of conventional solar silicon wafers, thereby improving heating efficiency. Meanwhile, the resistivity of the corresponding N-type heavily doped crystalline silicon layer structure is much lower than that of the N-type lightly doped crystalline silicon layer structure, thereby reducing contact resistance and extending service life.

[0058] Furthermore, such as Figures 2 to 8 In the example, the surface of the heating resistor layer 11 is ground and polished during the processing to meet the requirements of use and facilitate connection with the metal electrode; and the thickness of the heating resistor layer 11 is kept in the range of 50μm to 300μm to minimize the amount of material used while ensuring heat generation, so as to control manufacturing costs.

[0059] In a further embodiment of this application, the substrate 2 of the heating element 100 can adopt different shapes according to the assembly requirements of the heated non-combustible atomizing device 400. For example, in a specific example, such as Figure 9 As shown, the substrate 2 can adopt a cylindrical structure, and the heating structure 1 is connected to the outer wall of the substrate 2 so as to adapt to the shape of the aerosol generating rod and the heating cavity of the heated non-combustible atomizing device 400. When the aerosol generating rod is inserted into the heating body 100, the heating body 100 can form a continuous circumferential coverage of the aerosol generating rod, and the coverage area is relatively large, which is beneficial to further improve the heating uniformity of the aerosol generating rod. Moreover, the heating structure 1 and the aerosol generating rod can be separated on both sides by the substrate 2 to avoid damage to the heating structure 1, and also to avoid the phenomenon of overheating caused by direct contact between the aerosol generating rod and the heating structure 1.

[0060] In another specific example, substrate 2 can also adopt an arc-shaped plate structure, such as... Figure 10 In the example described, when applied to the heated non-combustible atomizing device 400, a localized area of ​​the aerosol generating rod can be covered circumferentially. Specifically, one or more heating elements 100 as described in this embodiment can be arranged in the heating chamber as needed to intermittently cover the aerosol generating rod circumferentially. Alternatively, the substrate 2 can also be configured as a planar plate structure, which reduces processing difficulty and facilitates manufacturing. When applied to the heated non-combustible atomizing device 400, one or more heating elements 100 can be arranged in the heating chamber as needed, with appropriate angles to meet the heating requirements of the aerosol generating rod.

[0061] In further embodiments of this application, such as Figure 9 In the example, the substrate 2 of the heating element 100 can be made of glass to increase the light transmittance of the substrate 2, so that the infrared radiation generated by the heating structure 1 can pass through the substrate 2 to produce an infrared heating effect on the aerosol generating rod. Specifically, the light transmittance is better when the substrate 2 is made of transparent glass.

[0062] In further implementation of this application, such as Figure 11In the example, the substrate 2 of the heating element 100 can also be a metal substrate, and a perforated structure 221 is provided on the substrate 2 corresponding to the heating structure 1, so that the infrared radiation rays generated by the heating structure 1 can pass through the perforated structure 221 to produce an infrared heating effect on the aerosol generating rod. Metal substrates have relatively higher strength and are easier to process, especially when the substrate 2 is curved or other curved, the metal material is flexible, less prone to breakage, and easy to process and shape. The shape of the perforated structure 221 can be set according to specific application needs; for example, it can be... Figure 11 The mesh structure shown can also be a grid structure, a mesh structure, or other structural forms, which will not be elaborated here.

[0063] In further embodiments of this application, such as Figures 1 to 8 In the example, during the processing of the heating element 100, the connection between the heating structure 1 and the substrate 2 can be achieved by any of the following methods: brazing, fusion, thermal bonding or bonding. The appropriate connection method can be selected according to the different materials of the heating structure 1 and the substrate 2.

[0064] Furthermore, the electrode layer 12 of the heating structure 1 can be formed by connecting metal electrodes to the surface of the heating resistor layer 11 through printing and sintering. Specifically, metal electrode printing and sintering operations are performed on both sides of the heating resistor layer 11 to form electrode layers 12 on both sides of the heating resistor layer 11. When the electrode layer 12 is electrically connected to the power supply device, it can energize both sides of the heating resistor layer 11, which helps to improve the heating efficiency of the heating resistor layer 11. In practical applications, the electrode layer 12 of the heating element 100 can be provided with corresponding pad structures or pin structures to facilitate electrical connection with the power supply device. The specific setting position can be set according to the installation position and structural form of the heating element 100 and the power supply device in the heating non-combustion atomizing device 400.

[0065] An embodiment of the second aspect of this application provides a heated non-combustible atomizing device 400, such as... Figure 1 and Figure 12 As shown, the heated non-combustible atomizing device 400 includes a device body 410, a heating element 100 as described in any of the embodiments of the first aspect, and a power supply device 420. The device body 410 has a heating chamber 411, for example... Figure 12The heating chamber 411, located in the device body 410, shown in the diagram, can accommodate the aerosol generating rod. A power supply device 420 is disposed within the device body 410. A heating element 100 is disposed in the heating chamber and electrically connected to the power supply device 420, so that the power supply device 420 supplies power to the heating element 100. When the aerosol generating rod is inserted into the heating chamber 411, the heating element 100 can be positioned opposite the aerosol generating rod to heat it, causing the atomizing matrix inside the aerosol generating rod to be heated and atomized, thus generating aerosol.

[0066] The heating element 100 has a heating resistance layer 11 formed by a lightly doped semiconductor structure, which can generate heat when energized, resulting in higher heating efficiency. Moreover, the generated thermal radiation band is concentrated in the infrared to far-infrared region, which can produce an infrared heating effect on the aerosol generating rod, thereby increasing the heat received inside the aerosol generating rod and improving the heating uniformity of the aerosol generating rod. In addition, the heating element 100 has a simple structure, does not need to penetrate into the aerosol generating rod, occupies little space, and is easy to arrange within the limited space of the heating cavity 411.

[0067] The following describes a specific example of the heated non-combustible atomizing device 400 of this application, with reference to the accompanying drawings.

[0068] like Figure 8 , Figure 11 and Figure 12 As shown, the top of the device body 410 of the heated non-combustible atomizing device 400 has a heating chamber 411, the top of which is open to allow the aerosol generating rod 400 to be inserted; the bottom of the heating chamber 411 has multiple vent holes 412, which can communicate with the outside to allow airflow to enter the aerosol generating rod 400 inside the heating chamber 411. The heating element 100 adopts a cylindrical structure, with both ends of the heating element 100 open, and is disposed in the heating chamber 411 along the height direction of the device body 410. The substrate 2 is specifically a metal substrate with a hollow structure 221; a heat insulation sleeve 413 is sleeved on the outside of the heating element 100. The heating element 100 includes a heating structure 1 and a substrate 2. The heating structure 1 is connected to the outer wall of the substrate 2 and is disposed circumferentially. Figure 8In the example shown, in the thickness direction, the heating structure 1 sequentially includes an electrode layer 12, a second auxiliary layer 14, a first auxiliary layer 13, a heating resistor layer 11, a first auxiliary layer 13, a second auxiliary layer 14, and an electrode layer 12. The heating resistor layer 11 is an N-type lightly doped silicon layer structure, formed by doping with phosphorus as a donor element, with a thickness ranging from 50 μm to 300 μm and a resistivity 2 to 5 orders of magnitude higher than that of conventional solar silicon wafers. The first auxiliary layer 13 is an N-type heavily doped silicon layer structure, formed by phosphorus diffusion through phosphorus oxychloride applied to the surface of the N-type lightly doped silicon layer structure, and its resistivity is much lower than that of the N-type lightly doped silicon layer structure. The second auxiliary layer 14 is an ITO transparent oxide conductive layer. The heating structure 1 is connected to the outer wall of the substrate 2 by brazing. The power supply device 420 is disposed in the device body 410 and located below the heating chamber 411. Specifically, the power supply device 420 includes a battery 421 and an electronic control board 422 electrically connected. The electronic control board 422 has a control circuit and is electrically connected to the electrode layer 12 of the heating element 100 to control the battery 421 to supply power to the heating element 100. Additionally, corresponding switches can be provided on the device body 410 to control heating.

[0069] When the aerosol generating rod 400 is inserted into the heating chamber 411, as Figure 12 As shown, the heating element 100 is energized and heats up the outer peripheral area of ​​the aerosol generating rod 400. At the same time, the infrared rays radiated by the heating element 100 penetrate the outer surface of the aerosol generating rod 400 to heat the interior and cover different areas of the aerosol generating rod 400 in the circumferential direction, so that the heat received by the aerosol generating rod 400 inside and outside is more uniform, reducing the temperature difference between the inside and outside, thereby improving the atomization efficiency.

[0070] Furthermore, the heated non-combustible atomizing device 400 in this embodiment also has all the beneficial effects of the heating element 100 in any of the above embodiments, which will not be repeated here.

[0071] The above examples illustrate this application only to aid understanding and are not intended to limit its scope. Those skilled in the art to which this application pertains can make various simple deductions, modifications, or substitutions based on the ideas presented.

Claims

1. A heat generating body, characterized by comprising: Comprise: a heating structure, the heating structure comprising a heating resistance layer and an electrode layer, the heating resistance layer being a lightly doped semiconductor structure, and the heating resistance layer having the electrode layer on both sides in the thickness direction, the electrode layer being used for electrical connection with a power supply device to make the heating resistance layer heat in the energized state; and a substrate, the substrate being provided on one side of the heating structure in the thickness direction and being fixedly connected with the heating structure.

2. The heating body according to claim 1, wherein: the heating resistance layer is any one of an N-type lightly doped crystalline silicon layer structure, a P-type lightly doped crystalline silicon layer structure, an N-type lightly doped crystalline germanium layer structure or a P-type lightly doped crystalline germanium layer structure.

3. The heating body according to claim 2, wherein: the heating structure further comprises: a first auxiliary layer, the first auxiliary layer being formed on at least one side surface of the heating resistance layer in the thickness direction, and the first auxiliary layer being located between the electrode layer on the corresponding side and the heating resistance layer; wherein the first auxiliary layer is a heavily doped semiconductor structure, and the base material type and the doping type of the first auxiliary layer are consistent with those of the heating resistance layer; and / or, a second auxiliary layer, the second auxiliary layer being connected to at least one side of the heating resistance layer in the thickness direction, and the second auxiliary layer being located between the electrode layer on the corresponding side and the heating resistance layer; wherein the second auxiliary layer is an ITO transparent oxide conductive layer.

4. The heating body according to claim 3, wherein: the first auxiliary layer is formed on one side surface of the heating resistance layer in the thickness direction, and the first auxiliary layer is located between the electrode layer on the corresponding side and the heating resistance layer, the second auxiliary layer is connected to the side of the heating resistance layer in the thickness direction away from the first auxiliary layer, and the second auxiliary layer is located between the electrode layer on the corresponding side and the heating resistance layer; or, the heating resistance layer is provided with the first auxiliary layer and the second auxiliary layer on at least one side in the thickness direction, the first auxiliary layer is formed on the side surface of the heating resistance layer, the second auxiliary layer is connected to the side of the first auxiliary layer away from the heating resistance layer, and the electrode layer on the corresponding side is connected to the side of the second auxiliary layer away from the first auxiliary layer.

5. The heating body according to claim 3 or 4, wherein: the heating resistance layer is an N-type lightly doped crystalline silicon layer structure formed by doping a silicon material with a pentavalent element donor impurity, and the first auxiliary layer is an N-type heavily doped crystalline silicon layer structure formed by doping a silicon material with a pentavalent element donor impurity; or, the heating resistance layer is a P-type lightly doped crystalline silicon layer structure formed by doping a silicon material with a trivalent element donor impurity, and the first auxiliary layer is a P-type heavily doped crystalline silicon layer structure formed by doping a silicon material with a trivalent element donor impurity; or, the heating resistance layer is an N-type lightly doped crystalline germanium layer structure formed by doping a germanium material with a pentavalent element donor impurity, and the first auxiliary layer is an N-type heavily doped crystalline germanium layer structure formed by doping a germanium material with a pentavalent element donor impurity; or, The heating resistance layer is a P-type lightly doped germanium layer structure formed by doping germanium with trivalent donor impurities, and the first auxiliary layer is a P-type heavily doped germanium layer structure formed by doping germanium with trivalent donor impurities.

6. The heating element according to claim 3 or 4, wherein the heating resistance layer is polished.

7. The heating element according to claim 1, wherein the thickness of the heating resistance layer is in the range of 50 μm to 300 μm.

8. The heating element according to claim 1, wherein the substrate is a cylindrical structure, and the heating structure is connected to the outer sidewall of the substrate.

9. The heating element according to claim 1, wherein the heating structure and the substrate are connected by any one of soldering, welding, thermal bonding or adhesion.

10. An aerosol generating device comprising: a device body having a heating cavity for accommodating an aerosol generating rod; a heating element according to any one of claims 1 to 9 arranged in the heating cavity for heating the aerosol generating rod; and a power supply arranged in the device body and electrically connected to the heating element.

11. The aerosol generating device according to claim 10, wherein the heating cavity is a cylindrical cavity, and the heating structure is connected to the outer sidewall of the heating cavity.

12. The aerosol generating device according to claim 10, wherein the heating cavity is an arc-shaped or planar cavity, and the heating structure is connected to one side of the heating cavity.

13. The aerosol generating device according to claim 10, wherein the heating structure and the substrate are connected by any one of soldering, welding, thermal bonding or adhesion.

14. The aerosol generating device according to claim 10, wherein the electrode layer is formed by printing and sintering a metal electrode on the surface of the heating resistance layer.

15. The aerosol generating device according to claim 10, wherein the substrate is a glass substrate; or a metal substrate having a hollow structure.

16. The aerosol generating device according to claim 10, wherein the substrate is a cylindrical structure, and the heating structure is connected to the outer sidewall of the substrate.

10. A heat-not-burn aerosolisation apparatus, characterised in that, 17. The aerosol generating device according to claim 10, wherein the substrate is an arc-shaped or planar structure, and the heating structure is connected to one side of the substrate.

18. The aerosol generating device according to claim 10, wherein the heating structure and the substrate are connected by any one of soldering, welding, thermal bonding or adhesion.

19. The aerosol generating device according to claim 10, wherein the electrode layer is formed by printing and sintering a metal electrode on the surface of the heating resistance layer. ​

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