Power module and vehicle

Abstract

The utility model provides a power module and a vehicle. The power module comprises a substrate, the substrate is provided with a positive terminal connection area, a neutral terminal connection area and a negative terminal connection area, and the neutral terminal connection area is located between the positive terminal connection area and the negative terminal connection area. The power module is provided with a first commutation loop from the positive terminal connection area to the neutral terminal connection area and a second commutation loop from the neutral terminal connection area to the negative terminal connection area, and the ratio of the path length of one of the first commutation loop and the second commutation loop to the path length of the other commutation loop is within the range of 0.9-1. According to the invention, the commutation loop can be kept balanced and the stray inductance is low.

Description

Technical Field

[0001] This application relates to the field of power electronics technology, and more particularly to a power module and a vehicle. Background Technology

[0002] With the continued boom in China's new energy vehicle market, the development of power modules—a core component of new energy vehicles—has also attracted widespread attention. The reliability of power modules is directly related to the safety of new energy vehicles, thus placing higher demands on their reliability.

[0003] Three-level TNPC (T-type Neutral Point Clamped) power modules are commonly used in high-efficiency power electronics applications, particularly in electric vehicles, renewable energy conversion systems, and industrial drives. The core function of a TNPC is to achieve neutral point clamping; through three-level voltage switching, it effectively reduces switching losses and improves power conversion efficiency.

[0004] In a three-level power module, there are typically two commutation circuits: a high-power commutation circuit and a low-power commutation circuit. Currently, in three-level power modules, the parasitic inductance in the high-power and low-power commutation circuits is excessively large and uneven. Utility Model Content

[0005] The purpose of this application is to provide a power module and vehicle that can keep the converter circuit balanced and have low interference.

[0006] One aspect of this application provides a power module. The power module includes a substrate, on which a positive terminal connection area, a neutral terminal connection area, and a negative terminal connection area are provided. The neutral terminal connection area is located between the positive terminal connection area and the negative terminal connection area. The power module has a first commutation circuit from the positive terminal connection area to the neutral terminal connection area and a second commutation circuit from the neutral terminal connection area to the negative terminal connection area, wherein the ratio of the path length of one of the first commutation circuits to the path length of the other commutation circuit is in the range of 0.9 to 1.

[0007] Furthermore, the first converter circuit includes a common converter path and a first independent converter path, the second converter circuit includes the common converter path and a second independent converter path, and the power module includes a first switch, a second switch, a third switch and a fourth switch, wherein the neutral terminal connection area, the second switch and the third switch are located in the common converter path; the positive terminal connection area and the first switch are located in the first independent converter path; and the negative terminal connection area and the fourth switch are located in the second independent converter path.

[0008] Furthermore, the first independent converter path and the second independent converter path are located on opposite sides of the shared converter path.

[0009] Furthermore, the ratio of the path length of one independent converter loop in the first independent converter path to the path length of the other independent converter loop is in the range of 0.9 to 1.

[0010] Further, the substrate includes a first conductive region, a second conductive region, a third conductive region, a fourth conductive region, and a fifth conductive region, wherein the positive terminal connection region and the first switching transistor are located in the first conductive region; the third and fourth switching transistors are located in the second conductive region; the negative terminal connection region is located in the fourth conductive region; the neutral terminal connection region and the second switching transistor are located in the fifth conductive region; the first switching transistor is connected to the second conductive region via a first conductive line, the second switching transistor is connected to the third conductive region via a second conductive line, the third switching transistor is connected to the third conductive region via a third conductive line, and the fourth switching transistor is connected to the fourth conductive region via a fourth conductive line.

[0011] Furthermore, a common commutation path is formed from the third switch, the third conductive line, the third conductive region, the second conductive line, the second switch, the fifth conductive region to the neutral terminal connection area; a first independent commutation path is formed from the positive terminal connection area, the first conductive region, the first switch, the first conductive line, the second conductive region to the third switch; and a second independent commutation path is formed from the negative terminal connection area, the fourth conductive region, the fourth conductive line, the fourth switch, the second conductive region to the third switch.

[0012] Furthermore, the fifth conductive region is located between the first conductive region and the fourth conductive region.

[0013] Furthermore, the third conductive region is located between the fifth conductive region and the second conductive region.

[0014] Further, the substrate has a first side and a second side opposite to each other in the horizontal direction and a first end and a second end opposite to each other in the vertical direction. The first conductive region has a first horizontal region and a first vertical region. The positive terminal connection region is located in the first horizontal region, and the first switch is located in the first vertical region. The fifth conductive region has a fifth horizontal region and a fifth vertical region. The neutral terminal connection region is located in the fifth horizontal region, and the fourth switch is located in the fifth vertical region. The fourth conductive region has a fourth horizontal region and a fourth vertical region. The negative terminal connection region is located in the fourth horizontal region. The third conductive region has a third horizontal region and a third vertical region. The second... The conductive region has a second horizontal region and a second vertical region. The third switch and the fourth switch are arranged side by side in the second horizontal region along the horizontal direction. The first horizontal region, the fifth horizontal region, and the fourth horizontal region are located at the first end of the substrate, and the fifth horizontal region is located between the first horizontal region and the fourth horizontal region. The second horizontal region is located at the second end of the substrate. The second vertical region, the first vertical region, the third vertical region, the fifth vertical region, and the fourth vertical region are arranged sequentially between the first side and the second side of the substrate. The third horizontal region is located between the first vertical region and the second horizontal region.

[0015] Another aspect of this application provides a vehicle. The vehicle includes the power module described above.

[0016] The power modules and vehicles of one or more embodiments of this application, by optimizing their layout and design and employing a balanced commutation loop path, effectively improve switching efficiency and system stability, reduce switching losses, and significantly enhance performance and reliability by reducing loop inductance and precisely controlling parasitic inductance. Attached Figure Description

[0017] Figure 1 This is a schematic diagram of the commutation circuit of a three-level power module in the related technology.

[0018] Figure 2 This is a simplified schematic diagram of the commutation circuit of a power module according to an embodiment of this application.

[0019] Figure 3 This is a schematic diagram of the structure of a power module according to an embodiment of this application.

[0020] Figure 4 This is a circuit diagram of a power module according to an embodiment of this application.

[0021] Figure 5This is a schematic diagram showing the path of the first and second converter circuits of a power module according to an embodiment of this application.

[0022] Figure 6 This is a schematic diagram of the internal layout of a power module according to another embodiment of this application.

[0023] Figure 7 This is a schematic diagram of the internal layout of a power module according to another embodiment of this application.

[0024] Figure 8 This is a schematic diagram of the internal layout of a power module according to another embodiment of this application.

[0025] Figure 9 This is a schematic diagram of the internal layout of a power module according to another embodiment of this application.

[0026] Figure 10 This is a schematic diagram of the internal layout of a power module according to another embodiment of this application. Detailed Implementation

[0027] Exemplary embodiments will now be described in detail, examples of which are illustrated in the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numerals in different drawings denote the same or similar elements. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with this application. Rather, they are merely examples of apparatuses consistent with some aspects of this application as detailed in the appended claims.

[0028] Figure 1 A schematic diagram of the commutation circuit of a three-level power module in related technologies is shown. For example... Figure 1 As shown, the power terminals of this three-level power module include a positive power terminal DC+, a negative power terminal DC-, and a neutral power terminal N. This three-level power module has a high-power commutation circuit and a low-power commutation circuit. The high-power commutation circuit is a circuit from the positive power terminal DC+ to the neutral power terminal N, and the low-power commutation circuit is a circuit from the neutral power terminal N to the negative power terminal DC-. Figure 1 As can be seen, the commutation path length of the high-power commutator circuit is 4d + 2d², while that of the low-power commutator circuit is 4d + 2d² + 2d¹. Both the high-power and low-power commutator circuits have relatively long commutation path lengths, and the difference in length between them (2d¹) causes a difference in parasitic inductance between the two circuits, resulting in excessively large and uneven parasitic inductance.

[0029] In view of this, this application provides an improved power module 10, which aims to solve the technical problem of excessive and uneven parasitic inductance of the commutation circuit mentioned in the above-mentioned related technologies.

[0030] The power modules and vehicles of various embodiments of this application will now be described in detail with reference to the accompanying drawings. Unless otherwise specified, the features of the following embodiments and implementations can be combined with each other.

[0031] The following will combine Figure 2 This will illustrate the overall layout concept of the commutation circuit of the power module in this application. Figure 2 A simplified schematic diagram of the commutation circuit of a power module according to one embodiment of this application is shown. Figure 2 As shown, the power module of this application is a three-level power module. The power terminals of the power module of this application include a positive power terminal DC+, a negative power terminal DC-, and a neutral power terminal N. The commutation path of the high-power commutation circuit from the positive power terminal DC+ to the neutral power terminal N is d+d1+d3, and the commutation path of the low-power commutation circuit from the neutral power terminal N to the negative power terminal DC- is d+d2+d4.

[0032] Therefore, this application can achieve similar abnormal inductance between two converter loops by controlling the paths of the converter loops, that is, by controlling the path lengths of d1+d3 and d2+d4.

[0033] Figure 3 This application discloses a schematic diagram of the structure of a power module 10 according to an embodiment of the present application. Figure 4 A circuit diagram of a power module 10 according to one embodiment of this application is shown. (Referring to...) Figure 3 and Figure 4 As shown, a power module 10 in one embodiment of this application includes a substrate 100, which may include, but is not limited to, a ceramic substrate.

[0034] The substrate 100 has a positive terminal connection area 121, a neutral terminal connection area 122, and a negative terminal connection area 123. The positive terminal connection area 121 is used to connect to the positive power terminal DC+, and the neutral terminal connection area 122 is used to connect to the neutral power terminal N. The negative terminal connection area 123 is used to connect to the negative power terminal DC-. The neutral terminal connection area 122 is located between the positive terminal connection area 121 and the negative terminal connection area 123.

[0035] The power module 10 has a first commutation circuit from the positive terminal connection area 121 to the neutral terminal connection area 122 and a second commutation circuit from the neutral terminal connection area 122 to the negative terminal connection area 123. The ratio of the path length of one of the first and second commutation circuits to the path length of the other commutation circuit is in the range of 0.9 to 1. This allows the path lengths of the first and second commutation circuits to remain substantially close, thereby reducing the stray inductance difference between the two circuits. For example, the stray inductance difference between the first and second commutation circuits can be kept to no more than ±0.5 nanohenries. The ratio of the path length of one of the first and second commutation circuits to the path length of the other being in the range of 0.9 to 1 can include: the ratio of the path lengths of the first and second commutation circuits being in the range of 0.9 to 1; or, the ratio of the path lengths of the second and first commutation circuits being in the range of 0.9 to 1.

[0036] Figure 5 This paper presents a schematic diagram showing the path of the first and second converter circuits of a power module 10 according to an embodiment of this application. Figure 5 The arrows in the diagram are only used to distinguish the paths of the first and second independent converter loops, and do not indicate the direction of current flow. (Refer to the reference...) Figure 5 In some embodiments, the first converter circuit of this application includes a shared converter path and a first independent converter path, and the second converter circuit of this application includes a shared converter path and a second independent converter path.

[0037] Both the first converter circuit and the second converter circuit of this application include a shared converter path, so that some of the converter paths of the first converter circuit and the second converter circuit can be shared with each other. Therefore, the entire path length difference between the first converter circuit and the second converter circuit can be controlled by controlling the length difference of their respective independent converter paths.

[0038] The power module 10 includes a first switch T1, a second switch T2, a third switch T3, and a fourth switch T4. In some embodiments, the neutral terminal connection area 122, the second switch T2, and the third switch T3 are located in a common commutation path; the positive terminal connection area 121 and the first switch T1 are located in a first independent commutation path; and the negative terminal connection area 123 and the fourth switch T4 are located in a second independent commutation path.

[0039] like Figure 5 As shown, in some embodiments, the first independent converter path and the second independent converter path are located on opposite sides of the shared converter path.

[0040] The first and second converter circuits of this application can share a common converter path, i.e., a shared converter path, and their respective independent converter paths are located on opposite sides of this shared converter path. By adopting this arrangement, it is easier to keep the path lengths of the first and second converter circuits substantially similar while occupying a smaller substrate area, thereby reducing the difference in stray inductance between the first and second converter circuits.

[0041] Optionally, the ratio of the path length of one independent converter loop to the path length of the other independent converter loop in the first independent converter path and the second independent converter path is in the range of 0.9 to 1, so that the path lengths of the first independent converter path and the second independent converter path remain basically close.

[0042] Since both the first converter circuit and the second converter circuit share a common converter path, in some embodiments, in order to maintain a layout where the path lengths of the first converter circuit and the second converter circuit are substantially similar, it is only necessary to arrange the first independent converter path and the second independent converter path to have substantially similar path lengths.

[0043] In some embodiments, the substrate 100 of this application includes a first conductive region 111, a second conductive region 112, a third conductive region 113, a fourth conductive region 114, and a fifth conductive region 115.

[0044] The shape of the first conductive region 111 may include, but is not limited to, an L-shape, a T-shape, or a 1-shape. The positive terminal connection region 121 and the first switching transistor T1 are located in the first conductive region 111, wherein the drain of the first switching transistor T1 is electrically connected to the first conductive region 111. The first switching transistor T1 may include one or more.

[0045] The shape of the second conductive region 112 may include, but is not limited to, an L-shape. A third switch T3 and a fourth switch T4 are located in the second conductive region 112, wherein the drains of the third switch T3 and the fourth switch T4 are electrically connected to the second conductive region 112. Each of the third switch T3 and the fourth switch T4 may include one or more. Additionally, an AC terminal connection area 124 for connecting to the AC power terminal is also located in the second conductive region 112.

[0046] The shape of the third conductive region 113 may include, but is not limited to, an L-shape. The third conductive region 113 may serve as the electrical connection surface between the third switch T3 on the second conductive region 112 and the second switch T2 on the fifth conductive region 115.

[0047] The shape of the fourth conductive region 114 may include, for example, an L-shape, a straight line, or other variations. The negative terminal connection region 123 is located in the fourth conductive region 114.

[0048] The neutral terminal connection area 122 and the second switching transistor T2 are located in the fifth conductive region 115, wherein the drain of the second switching transistor T2 is electrically connected to the fifth conductive region 115. The second switching transistor T2 may include one or more.

[0049] The first switch T1 (specifically, the source of the first switch T1) can be connected to the second conductive region 112 through the first conductive line 131, the second switch T2 (specifically, the source of the second switch T2) can be connected to the third conductive region 113 through the second conductive line 132, the third switch T3 (specifically, the source of the third switch T3) can be connected to the third conductive region 113 through the third conductive line 133, and the fourth switch T4 (specifically, the source of the fourth switch T4) can be connected to the fourth conductive region 114 through the fourth conductive line 134.

[0050] like Figure 5 As shown in the thick black trace, a common commutation path is formed from the third switch transistor T3, the third conductive line 133, the third conductive region 113, the second conductive line 132, the second switch transistor T2, the fifth conductive region 115 to the neutral terminal connection area 122.

[0051] like Figure 5 As shown in the thick green trace, the first independent commutation path is formed from the positive terminal connection area 121, the first conductive area 111, the first switch T1, the first conductive line 131, the second conductive area 112 to the third switch T3.

[0052] like Figure 5 As shown by the thick red trace, a second independent commutation path is formed from the negative terminal connection area 123, the fourth conductive area 114, the fourth conductive line 134, the fourth switch T4, the second conductive area 112 to the third switch T3.

[0053] In some embodiments, the fifth conductive region 115 is located between the first conductive region 111 and the fourth conductive region 114. This allows the first independent converter path in the first converter loop and the second independent converter path in the second converter loop to be located on opposite sides of a shared converter path.

[0054] In some embodiments, the third conductive region 113 is located between the fifth conductive region 115 and the second conductive region 112, and can serve as the intermediate connection surface for the common source connection of the second switch T2 and the third switch T3.

[0055] The substrate 100 has a first side and a second side opposite to each other in the horizontal direction, and a first end and a second end opposite to each other in the vertical direction.

[0056] The positive terminal connection area 121, the neutral terminal connection area 122 and the negative terminal connection area 123 are located at the first end of the substrate 100, and the AC terminal connection area 124 is located at the second end of the substrate 100.

[0057] In some embodiments, the first conductive region 111 of the substrate 100 has a first horizontal region 1111 and a first vertical region 1112, the positive terminal connection region 121 is located in the first horizontal region 1111, and the first switch T1 is located in the first vertical region 1112.

[0058] The fifth conductive region 115 of the substrate 100 has a fifth horizontal region 1151 and a fifth vertical region 1152. The neutral terminal connection region 122 is located in the fifth horizontal region 1151, and the fourth switch T4 is located in the fifth vertical region 1152.

[0059] The fourth conductive region 114 of the substrate 100 has a fourth horizontal region 1141 and a fourth vertical region 1142, and the negative terminal connection region 123 is located in the fourth horizontal region 1141.

[0060] The third conductive region 113 of the substrate 100 has a third horizontal region 1131 and a third vertical region 1132.

[0061] The second conductive region 112 of the substrate 100 has a second horizontal region 1121 and a second vertical region 1122. The third switch T3 and the fourth switch T4 are arranged side by side in the second horizontal region 1121 along the horizontal direction.

[0062] The first horizontal region 1111, the fifth horizontal region 1151 and the fourth horizontal region 1141 are located at the first end of the substrate 100, and the fifth horizontal region 1151 is located between the first horizontal region 1111 and the fourth horizontal region 1141. The second horizontal region 1121 is located at the second end of the substrate 100.

[0063] The second vertical region 1122, the first vertical region 1112, the third vertical region 1132, the fifth vertical region 1152 and the fourth vertical region 1142 are arranged sequentially between the first side and the second side of the substrate 100; the third horizontal region 1131 is located between the first vertical region 1112 and the second horizontal region 1121.

[0064] exist Figure 5 In the embodiment shown, the fourth conductive region 114 further has a fourth additional horizontal region 1143, wherein the fourth additional horizontal region 1143 is located between the fifth vertical region 1152 of the fifth conductive region 115 and the second horizontal region 1122 of the second conductive region 112.

[0065] Figures 6 to 10 This application discloses a schematic diagram of the internal layout of a power module 10 according to other embodiments of the present application. By slightly modifying... Figure 3 The internal layout of the power module 10 can be obtained. Figures 6 to 10 Other variations are shown.

[0066] like Figure 6 As shown, it can be shortened Figure 3 The horizontal length of the second conductive region 112 in Scheme 1 is increased, and the vertical length of the fourth conductive region 114 is lengthened, thereby evolving into... Figure 6 Scheme 2 of the power module 10 shown.

[0067] like Figure 7 As shown, it can be shortened Figure 3 In Scheme 1 shown, by lengthening the horizontal region of the second conductive region 112, lengthening the vertical region to the right of the second conductive region 112, and deleting the horizontal region of the fourth conductive region 114 while lengthening the vertical region of the fourth conductive region 114, the following can be derived: Figure 7 Scheme 3 of the power module 10 shown.

[0068] like Figure 8 As shown, it can be Figure 3 In the scheme 1 shown, the fourth conductive region 114 is embedded from the middle of the second conductive region 112, thus evolving into... Figure 8 Scheme 4 of the power module 10 shown.

[0069] like Figure 9 As shown, it can be Figure 3 In the illustrated scheme 1, the fourth conductive region 114 is embedded from the bottom of the second conductive region 112, thereby evolving into... Figure 9 Scheme 5 of the power module 10 shown.

[0070] like Figure 10 As shown, it can be Figure 3 Scheme 1 shown can be mirrored along the vertical direction, thus evolving into... Figure 10 The power module 10 shown is scheme 6. Of course, other schemes 2-5 can also be mirrored to obtain corresponding variant schemes.

[0071] It is understood that the above are merely schematic examples of the internal layout of the power module 10 and the shapes of the various conductive regions on the substrate 100 of this application. However, the layout of the power module 10 and the shapes of the various conductive regions on the substrate 100 of this application are not limited to these. Any layout structure that can keep the path lengths of the first commutation circuit and the second commutation circuit of the power module 10 substantially similar will be covered within the protection scope of this application.

[0072] The power module 10 of this application significantly improves performance and reliability by optimizing its layout and design; the power module 10 of this application adopts a balanced commutation loop path, thereby effectively improving switching efficiency and system stability and reducing switching losses by reducing loop inductance and precisely controlling parasitic inductance.

[0073] In addition, the power module 10 of this application can achieve the connection of the switching transistor and the same commutation loop path on the conductive area of ​​the substrate 100 through a simple conductive line. Compared with the traditional design, which may require multiple complex electrical connection lines, it not only effectively reduces the complexity of the design, but also provides higher reliability and production efficiency in terms of process.

[0074] This application also provides a vehicle. The vehicle includes the power module 10 as described in the various embodiments above.

[0075] The vehicle described in this application has beneficial technical effects that are substantially similar to those of the power module 10 described above, so they will not be repeated here.

[0076] The power module and vehicle provided in the embodiments of this application have been described in detail above. Specific examples have been used to illustrate the power module and vehicle of the embodiments of this application. The descriptions of the embodiments above are only for helping to understand the core ideas of this application and are not intended to limit this application. It should be noted that those skilled in the art can make several improvements and modifications to this application without departing from the spirit and principles of this application, and all such improvements and modifications should fall within the protection scope of the appended claims.

Claims

1. A power module, characterized in that: The substrate includes a positive terminal connection area, a neutral terminal connection area, and a negative terminal connection area, wherein the neutral terminal connection area is located between the positive terminal connection area and the negative terminal connection area. The power module has a first commutation circuit from the positive terminal connection area to the neutral terminal connection area and a second commutation circuit from the neutral terminal connection area to the negative terminal connection area, wherein the ratio of the path length of one of the first commutation circuits to the path length of the other commutation circuit is in the range of 0.9 to 1.

2. The power module as described in claim 1, characterized in that: The first converter circuit includes a shared converter path and a first independent converter path; the second converter circuit includes the shared converter path and a second independent converter path; the power module includes a first switch, a second switch, a third switch, and a fourth switch, wherein... The neutral terminal connection area, the second switch, and the third switch are located in the common commutation path; The positive terminal connection area and the first switch are located in the first independent commutation path; The negative terminal connection area and the fourth switch are located in the second independent commutation path.

3. The power module as described in claim 2, characterized in that: The first independent converter path and the second independent converter path are located on opposite sides of the shared converter path.

4. The power module as described in claim 2, characterized in that: The ratio of the path length of one independent converter loop in the first independent converter path to the path length of the other independent converter loop is in the range of 0.9 to 1.

5. The power module as described in claim 2, characterized in that: The substrate includes a first conductive region, a second conductive region, a third conductive region, a fourth conductive region, and a fifth conductive region, wherein, The positive terminal connection area and the first switching transistor are located in the first conductive region; The third and fourth switching transistors are located in the second conductive region; The negative terminal connection region is located in the fourth conductive region; The neutral terminal connection area and the second switching transistor are located in the fifth conductive area; The first switch is connected to the second conductive region via a first conductive line, the second switch is connected to the third conductive region via a second conductive line, the third switch is connected to the third conductive region via a third conductive line, and the fourth switch is connected to the fourth conductive region via a fourth conductive line.

6. The power module as described in claim 5, characterized in that: The common commutation path is formed from the third switch, the third conductive line, the third conductive region, the second conductive line, the second switch, the fifth conductive region to the neutral terminal connection area; The first independent commutation path is formed from the positive terminal connection area, the first conductive area, the first switch, the first conductive line, the second conductive area to the third switch; The second independent commutation path is formed from the negative terminal connection area, the fourth conductive area, the fourth conductive line, the fourth switch, the second conductive area to the third switch.

7. The power module as described in claim 6, characterized in that: The fifth conductive region is located between the first conductive region and the fourth conductive region.

8. The power module as described in claim 6, characterized in that: The third conductive region is located between the fifth conductive region and the second conductive region.

9. The power module as described in claim 6, characterized in that: The substrate has a first side and a second side opposite each other in the horizontal direction, and a first end and a second end opposite each other in the vertical direction. The first conductive region has a first horizontal region and a first vertical region. The positive terminal connection region is located in the first horizontal region, and the first switching transistor is located in the first vertical region. The fifth conductive region has a fifth horizontal region and a fifth vertical region. The neutral terminal connection region is located in the fifth horizontal region, and the fourth switching transistor is located in the fifth vertical region. The fourth conductive region has a fourth horizontal region and a fourth vertical region. The negative terminal connection region is located in the fourth horizontal region. The third conductive region has a third horizontal region and a third vertical region. The second conductive region has a second horizontal region and a second vertical region. The third switching transistor and the fourth switching transistor are arranged side by side in the second horizontal region. The first horizontal region, the fifth horizontal region, and the fourth horizontal region are located at the first end of the substrate, and the fifth horizontal region is located between the first horizontal region and the fourth horizontal region, and the second horizontal region is located at the second end of the substrate; The second vertical region, the first vertical region, the third vertical region, the fifth vertical region, and the fourth vertical region are arranged sequentially between the first side and the second side of the substrate; The third horizontal zone is located between the first vertical zone and the second horizontal zone.

10. A vehicle, characterized in that: Includes the power module as described in any one of claims 1 to 9.

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