Multispectral absorption semiconductor structure and image sensor

Abstract

The present application describes a multispectral absorption semiconductor structure, comprising: a photosensitive device layer comprising a plurality of photosensitive elements arranged in a two-dimensional pixel array; the filter layer is located on one side of the photosensitive device layer, the filter layer comprises a plurality of color filters of different colors, and the color filters and the photosensitive elements are arranged in a one-to-one correspondence mode to form corresponding pixels; the spectrum regulation and control layer is located on the side, away from the photosensitive device layer, of the light filtering layer, the spectrum regulation and control layer comprises a plurality of color matching pieces, the light wavelength ranges of the color matching pieces and the corresponding color filtering pieces are overlapped, and at least part of the color matching pieces deviate towards the center direction of the two-dimensional pixel array relative to the corresponding color filtering pieces below. The utility model also provides an image sensor comprising the semiconductor structure. In the application, the combination of the double-layer color filtering structures with different colors can provide more color channels for the pixel array, the high spectral resolution can be better realized, and the double-layer color filtering structures are staggered to carry out pupil correction, so that the degradation of the sensitivity of the photosensitive element is reduced.

Description

TECHNICAL FIELD

[0001] The utility model relates to the field of imaging, especially a kind of multispectral absorption semiconductor structure, image sensor comprising the semiconductor structure. BACKGROUND

[0002] Generally, CMOS image sensor uses red, green, blue three colors of organic color filter material to carry out light filtering, and then realizes the color restoration of image by the algorithm of rear end.However, this kind of image only relying on three colors to restore object color has the problem that color gamut range is not enough and is greatly influenced by illumination light source.Using more color channels multispectral camera to realize higher spectral resolution is a feasible method to solve the above problems.The general multispectral camera has scanning type and snapshot type two schemes.Among them, the scanning type scheme needs optical system to scan to separate spectral information, its volume is larger and imaging speed is slower, difficult to low cost large area popularization and application.The snapshot type scheme does not need the scanning structure of optical system, has smaller volume and higher integration, has the potential of wide application.Pixel-level snapshot multispectral scheme uses more color filter mode to increase the number of color channels to obtain higher spectral resolution, typical mode includes organic color filter material, multilayer thin film filter, super surface filter and the like structure.Among them, the scheme using organic color filter material is similar to existing pixel structure, has better process compatibility, other two ways have the problems of great process difficulty and high cost. SUMMARY

[0003] Therefore, the utility model provides a kind of multispectral absorption semiconductor structure, comprising: photosensitive device layer, including the two-dimensional pixel array arrangement of multiple photosensitive elements;Light filter layer, located in photosensitive device layer side, light filter layer includes multiple different colors of color filter, and color filter is set to form corresponding pixel with photosensitive element one-to-one;Spectrum control layer, located in the side of light filter layer away from photosensitive device layer, spectrum control layer includes several color patches, and the wavelength range of light of color patch and corresponding color filter exists overlap, and at least part color patch is offset relative to the center direction of two-dimensional pixel array of lower corresponding color filter.

[0004] Optionally, in the vertical direction of photosensitive device layer pointing to spectrum control layer, single color patch is set corresponding with at least two colors of adjacent color filter.

[0005] Optionally, light filter layer is with 4x 4 arrangement adjacent color filter as a basic repeat unit, single color patch is set corresponding with the adjacent four color filters of 2x2 arrangement in the center of basic repeat unit.

[0006] Optionally, the color filter sheet includes at least a first color filter sheet and a second color filter sheet, the first color filter sheet and the second color filter sheet are different colors; and / or, the color filter sheet includes at least a third color filter sheet and a fourth color filter sheet, the third color filter sheet and the fourth color filter sheet are different in size.

[0007] Optionally, in at least part of the corresponding pixels, the color filter sheet is offset relative to the photosensitive element towards the center direction of the two-dimensional pixel array.

[0008] Optionally, the semiconductor structure further includes: a microlens layer located on the side of the spectrum regulation layer away from the light filtering layer, the microlens layer includes a plurality of microlenses, the microlenses are offset relative to the underlying color filter sheet towards the center direction of the two-dimensional pixel array.

[0009] Optionally, the semiconductor structure includes at least a first region located at the center of the two-dimensional pixel array and a second region located at the edge of the two-dimensional pixel array; wherein, in the first region, the color filter sheet is offset relative to the underlying corresponding color filter sheet towards the center direction of the two-dimensional pixel array by a distance a, in the second region, the color filter sheet is offset relative to the underlying corresponding color filter sheet towards the center direction of the two-dimensional pixel array by a distance b, and a < b.

[0010] Optionally, the semiconductor structure further includes: a grid structure including a first grid structure and a second grid structure, the first grid structure is located between adjacent color filter sheets, and the second grid structure is located between adjacent color filter sheets.

[0011] Optionally, the first grid structure is offset relative to the underlying corresponding second grid structure towards the center direction of the two-dimensional pixel array.

[0012] The utility model further provides an image sensor containing the semiconductor structure.

[0013] Compared with the prior art, the utility model has at least the following outstanding advantages:

[0014] In the embodiment of the present application, in order to solve the problem that single-layer color filter sheet cannot meet multi-color spectrum, a spectrum regulation layer is arranged above the light filtering layer, the spectrum regulation layer includes a plurality of color filter sheets overlapping with the light wavelength range of the color filter sheet, and the combination of double-layer different color filter structures can provide more color channels for the pixel array. The absorption of the color filter sheet can weaken the reflection of the surface of the semiconductor structure, and alleviate the problem of stray light related to the image, so that the combination of the light filtering layer and the spectrum regulation layer is used as the optical structure of the semiconductor structure, which is beneficial to better realize high spectral resolution. In order to realize pupil correction, at least part of the color filter sheets are offset relative to the underlying corresponding color filter sheets towards the center direction of the two-dimensional pixel array, thereby improving the sensitivity of the photosensitive element. BRIEF DESCRIPTION OF DRAWINGS

[0015] Figure 1is a partial cross-sectional structure schematic diagram of a semiconductor structure provided by an embodiment of the present application;

[0016] Figure 2 is another partial cross-sectional structure schematic diagram of a semiconductor structure provided by an embodiment of the present application;

[0017] Figure 3 is a pixel-in-film layer offset relationship schematic diagram provided by an embodiment of the present application;

[0018] Figure 4 is another partial cross-sectional structure schematic diagram of a semiconductor structure provided by an embodiment of the present application;

[0019] Figure 5 is a pixel array structure schematic diagram provided by an embodiment of the present application;

[0020] Figure 6 is another pixel-in-film layer offset relationship schematic diagram provided by an embodiment of the present application;

[0021] Figure 7 is another pixel array structure schematic diagram provided by an embodiment of the present application;

[0022] Figure 8 is yet another pixel array structure schematic diagram provided by an embodiment of the present application;

[0023] Figure 9 is a first region and a second region schematic diagram provided by an embodiment of the present application;

[0024] Figure 10 is yet another partial cross-sectional structure schematic diagram of a semiconductor structure provided by an embodiment of the present application.

[0025] Element number explanation

[0026] 10 semiconductor structure

[0027] 100 photosensitive device layer

[0028] 101 photosensitive element

[0029] 200 filter layer

[0030] 202 color filter

[0031] 300 spectrum regulation layer

[0032] 303 color regulation sheet

[0033] 400 microlens layer

[0034] 404 microlens

[0035] 3031 first color regulation sheet

[0036] 3032 second color patch

[0037] 3033 third color patch

[0038] 3034 fourth color patch DETAILED DESCRIPTION

[0039] The above objectives are achieved by the present application, and other advantages and effects of the present application will be apparent to those skilled in the art from the contents of the present specification. The present application can be implemented or applied in other different embodiments, and the details in the present specification can be modified or changed based on different viewpoints and applications without departing from the spirit of the present application.

[0040] As described in the detailed description of the embodiments of the present application, the sectional views showing the structures of the devices are partially enlarged without the general scale for the convenience of description, and the schematic views are only examples, which should not limit the scope of protection of the present application. In addition, the three-dimensional spatial dimensions including length, width and depth should be included in the actual manufacture.

[0041] For the convenience of description, spatial relationship words such as "under", "below", "lower", "underneath", "above", "upper" and the like can be used to describe the relationship between one element or feature and other elements or features shown in the drawings. It will be understood that these spatial relationship words are intended to include other orientations of the device in use or operation in addition to the orientations depicted in the drawings. In addition, when a layer is referred to as "between" two layers, it can be the only layer between the two layers, or one or more intervening layers can also be present.

[0042] In the context of the present application, the structure in which the first feature is "on" the second feature can include the embodiment in which the first and second features are formed in direct contact, and can also include the embodiment in which another feature is formed between the first and second features, so that the first and second features can not be in direct contact.

[0043] It should be noted that the diagrams provided in the present embodiment only illustrate the basic concept of the present application in a schematic manner, and only show the components related to the present application in the diagrams, not drawn according to the number, shape and size of the components in actual implementation. The actual implementation of each component can be changed arbitrarily in shape, number and proportion, and the layout pattern of the components can also be more complex.

[0044] In the prior art, a filter layer is usually used to realize color filtering of an image sensor. A common filter array is a Bayer array composed of RGB three colors, but the method of restoring object colors only by using three colors has problems of insufficient color gamut range and being greatly affected by illumination light sources. Therefore, how to obtain more color channels to realize higher spectral resolution is a problem that needs to be solved by the present application.

[0045] The present application proposes a solution to the above technical problem, mainly by combining a filter layer and a spectral regulation layer to regulate total spectral transmittance, and proposes a series of possible solutions.

[0046] As shown in Figure 1 The present application provides a multi-spectral absorption semiconductor structure 10, comprising:

[0047] a light sensing device layer 100 comprising a plurality of light sensitive elements 101 arranged in a two-dimensional array;

[0048] It can be understood that the semiconductor structure 10 comprises a plurality of light sensitive elements 101 arranged in a two-dimensional array of rows and columns in the light sensing device layer 100. For the purpose of clarity, Figure 1 only six light sensitive elements 101 are shown in the figure. However, in actual application of the semiconductor structure 10, the two-dimensional array can include thousands of rows and / or columns of light sensitive elements 101; similarly, in some embodiments, the two-dimensional array can have other arrangements in addition to rows and / or columns.

[0049] a filter layer 200 located on one side of the light sensing device layer 100, the filter layer 200 comprising a plurality of different colors of first color filters 202 arranged periodically, and the first color filters 202 are arranged one-to-one with the light sensitive elements 101 to form corresponding pixels;

[0050] It can be understood that the color filter 202 can be selected from optical resin, and by adjusting the proportion of the internal material of the optical resin, light of different wavelengths can pass through, thereby achieving the effect of color filtering. Generally speaking, the color filter 202 includes three basic colors of red (R), green (G), and blue (B), and the most common color filter arrangement is a Bayer array RGGB, that is, each basic repeating unit has one R color, one B color, and two G color filter arrangements. Of course, in some actual applications, the basic repeating unit can also be RGBW or a Quad Bayer Coding (QBC) pixel array arrangement. In some other actual applications, the color filter 202 can also include a CMMY pixel array arrangement of three colors of C (Cyan, cyan), M (Magenta, magenta), and Y (Yellow, yellow).

[0051] The spectrum regulation layer 300 is located on the side of the filter layer 200 away from the photosensitive device layer 100, and the spectrum regulation layer 300 includes a plurality of color adjusting pieces 303. The color adjusting piece 303 overlaps with the corresponding color filter piece 202 in terms of the wavelength range of light, and at least part of the color adjusting piece 303 is offset toward the center of the two-dimensional pixel array relative to the corresponding color filter piece 202 below.

[0052] It can be understood that the color adjusting piece 303 can also be selected from an optical resin, and the proportion of the material inside the optical resin is adjusted to form a color different from the color filter piece 202 but overlapping in the wavelength range, so that the light in the corresponding wavelength range is incident.

[0053] Optionally, in the vertical direction X of the photosensitive device layer 100 pointing to the spectrum regulation layer 300, the thickness of the color adjusting piece 303 is less than the thickness of the color filter piece 202. The optical structure combining the color filter piece and the color adjusting piece can change the color of the spectrum, but the thickness after superposition will cause too much absorption of incident light, thereby causing the signal quality to decrease. Therefore, the thickness of the color adjusting piece 303 can be set to be less than the thickness of the color filter piece 202, and the thickness after superposition of the color filter piece 202 and the color adjusting piece 303 should be less than a critical value, for example, the thickness of the color adjusting piece is 400-500 nm, and the thickness of the color filter piece is 400-600 nm.

[0054] It needs to be explained that the color adjusting piece 303 overlaps with the corresponding color filter piece 202 in terms of the wavelength range of light. Here, corresponding refers to positional correspondence, that is, in the vertical direction X of the photosensitive device layer 100 pointing to the spectrum regulation layer 300, the color adjusting piece 303 overlaps with the color filter piece 202, and the color adjusting piece 303 is located above the color filter piece 202, while the incident path of the light received by the corresponding pixel is from the color adjusting piece 303 to the color filter piece 202 and then to the photosensitive element 101. Through the superposition of the color adjusting piece 303 and the color filter piece 202 below, which overlap in terms of the wavelength range of light, a new color channel can be added to the pixel array, while the upper part of another part of the color filter piece 202 is not provided with the color adjusting piece 303, that is, the original color channel of the color filter piece is retained. At the same time, in the semiconductor structure, light with a larger main beam angle of incident light can affect the optical performance of the semiconductor structure, such as reflected light, which will cause image degradation when the oblique light characteristic is higher than needed, so pupil correction needs to be performed. Therefore, the color adjusting piece 303 is offset toward the center of the two-dimensional pixel array relative to the corresponding color filter piece 202 below, which reduces the sensitivity degradation of the photosensitive element.

[0055] Optionally, continuing to refer to Figure 1 , in at least part of the corresponding pixels, the color filter piece 202 is offset toward the center of the two-dimensional pixel array relative to the photosensitive element 101. Similarly, offsetting the color filter piece toward the center of the two-dimensional pixel array relative to the photosensitive element 101 can also further achieve pupil correction and reduce the sensitivity degradation of the photosensitive element.

[0056] Optionally, in some embodiments, referring to Figure 2 As shown, the semiconductor structure 10 further comprises: a microlens layer 400 located on the side of the spectral regulation layer 300 away from the filter layer 200, the microlens layer 400 comprises a plurality of microlenses 404, and the microlenses 404 are offset towards the center of the two-dimensional pixel array relative to the underlying color filter sheet 303. Figure 2 In some embodiments, each microlens 404 corresponds to one color filter 202 and one photosensitive element 101 respectively to form a pixel, and in other embodiments, such as a Bayer array pixel arrangement, one microlens can cover two or four pixels. The purpose of making microlenses is to collect more light into the photosensitive element 101 of the photosensitive device layer 100 to improve the photosensitive sensitivity of the photosensitive element 101.

[0057] Therefore, further, the pixel structure for pupil correction is as shown in Figure 3 As shown, the microlens, the color filter sheet CF2, the color filter sheet CF1 and the photosensitive element PD are sequentially distributed from top to bottom, and are offset towards the center of the two-dimensional pixel array relative to the underlying structure to form a corresponding light incident channel.

[0058] In the embodiments of the present application, in order to solve the problem that a single layer of color filter cannot meet the multi-spectrum, a spectral regulation layer is arranged above the filter layer, the spectral regulation layer comprises a plurality of color filter sheets with overlapping wavelength ranges with the color filter sheets, and the combination of the double layers of different color filter structures can provide more color channels for the pixel array. The absorption of the color filter sheet can weaken the reflection of the surface of the semiconductor structure, and alleviate the problem of stray light related to the image, so that the combination of the filter layer and the spectral regulation layer is used as the optical structure of the semiconductor structure, which is conducive to better implementation of high spectral resolution. In order to achieve pupil correction, at least part of the color filter sheets are offset towards the center of the two-dimensional pixel array relative to the corresponding color filter sheets below, thereby improving the sensitivity of the photosensitive element.

[0059] In some embodiments, as shown in Figure 4 As shown, in the vertical direction X of the photosensitive device layer 100 pointing to the spectral regulation layer 300, a single color filter sheet 303 is arranged corresponding to at least two adjacent color filter sheets 202 of different colors.

[0060] As can be understood, as in the above embodiments, the corresponding arrangement here refers to the positional correspondence, that is, the at least two adjacent color filter sheets 202 of different colors share one color filter sheet 303, and the incident path of the light received by the pixels corresponding to the at least two adjacent color filter sheets 202 of different colors is from the color filter sheet 303 to the color filter sheet 202 and then to the photosensitive element 101. The corresponding arrangement of the following embodiments can be referred to this description, and will not be described again.

[0061] For example, since there is an overlapping wavelength range between red light and green light, and there is an overlapping wavelength range between blue light and green light, a single green color filter sheet can be arranged corresponding to the red color filter sheet and the blue color filter sheet below, so that in this embodiment, the adjacent different color pixels share one color filter sheet, which can simplify the process flow and save costs.

[0062] In some embodiments, the filter layer 200 has 4x4 adjacent color filter sheets 202 as a basic repeating unit, and a single color filter sheet 303 is arranged corresponding to the 2x2 adjacent color filter sheets 202 at the center of the basic repeating unit. As shown in Figure 5 each color filter sheet 303 is arranged corresponding to the 2x2 adjacent color filter sheets 202 at the center of the basic repeating unit, Figure 5 the center dot in the figure represents the center of the two-dimensional pixel array, and the color filter sheet 303 is offset towards the center of the two-dimensional pixel array relative to the color filter sheet 202 below.

[0063] Optionally, the color filter sheet 303 and the color filter sheet 202 corresponding to the arrangement thereof are the same color. For example, the color filter sheet 202 corresponding to the arrangement of a single color filter sheet 303 is R, G, and B. Since there is an overlapping wavelength range between red light and green light, and there is an overlapping wavelength range between blue light and green light, the color filter sheet above is set to G, so that through the color superposition of the color filter sheet and the color filter sheet, in addition to the three color channels provided by the filter layer itself, the spectral regulation layer will provide two additional color channels.

[0064] Optionally, the color filter sheet 303 and the color filter sheet 202 corresponding to the arrangement thereof are different colors. Similarly, through the color superposition of the color filter sheet and the color filter sheet, in addition to the three color channels provided by the filter layer itself, the spectral regulation layer will provide three additional color channels.

[0065] In the embodiments of the present application, the pixel structure for pupil correction is as shown in Figure 6 The microlens, the color filter sheet CF2, the 2x2 adjacent color filter sheets CF1, and the photosensitive element PD are all offset towards the center of the two-dimensional pixel array relative to the structure below, so as to form a corresponding light incident channel, realize pupil correction, and a single color filter sheet can be arranged corresponding to multiple color filter sheets, which can reduce the process cost and facilitate better realization of more image color channels.

[0066] In some embodiments, the color filter sheet at least includes a first color filter sheet and a second color filter sheet, and the first color filter sheet and the second color filter sheet are different colors. As shown in Figure 7 On the basis of the above-mentioned embodiments, the color filter sheet includes a first color filter sheet 3031 and a second color filter sheet 3032 which are different colors. It can be understood that Figure 7The arrangement of the color filter and the color adjusting filter is only illustrative, and other arrangements can achieve similar functions.

[0067] In the embodiments of the present application, the spectral regulation layer can include first color adjusting filters and second color adjusting filters, and the color adjusting filters of different colors in combination with the color filters can help to achieve more image color channels.

[0068] In some embodiments, the color adjusting filter includes at least third color adjusting filters and fourth color adjusting filters, and the sizes of the third color adjusting filters and the fourth color adjusting filters are inconsistent. Figure 8 As shown, on the basis of the above embodiments, the color adjusting filter includes third color adjusting filters 3033 and fourth color adjusting filters 3034 of inconsistent sizes, wherein each third color adjusting filter 3033 is arranged in correspondence with four adjacent color filters 202 arranged in a 2x2 arrangement, and each fourth color adjusting filter 3034 is arranged in correspondence with two adjacent color filters 202. Figure 8 The arrangement of the color filter and the color adjusting filter is only illustrative, and other arrangements can achieve similar functions, and the colors of the third color adjusting filters and the fourth color adjusting filters are not limited herein.

[0069] In the embodiments of the present application, the color adjusting filters can have size differences, which can achieve more image color channels and improve the design freedom of the pixel structures in the semiconductor structure.

[0070] In some embodiments, as shown, Figure 9 The semiconductor structure includes at least a first region A1 at the center of the two-dimensional pixel array and a second region A2 at the edge of the two-dimensional pixel array.

[0071] In the first region A1, the color adjusting filter is offset by a distance a relative to the corresponding color filter below and towards the center of the two-dimensional pixel array, and in the second region A2, the color adjusting filter is offset by a distance b relative to the corresponding color filter below and towards the center of the two-dimensional pixel array, and a < b.

[0072] Further optionally, in the first region A1, the microlens is offset by a distance c relative to the color adjusting filter below and towards the center of the two-dimensional pixel array, and in the second region A2, the color adjusting filter is offset by a distance d relative to the corresponding color filter below and towards the center of the two-dimensional pixel array, and c < d.

[0073] In the embodiments of the present application, due to the lens, vignetting and leakage of incident light are more likely to occur in the edge region of the pixel array, and therefore different pupil correction amounts can be implemented in different regions of the pixel array. By making the offset amount of the edge region of the pixel array greater than the offset amount of the center region of the pixel array, pupil correction can be better achieved.

[0074] In some embodiments, as shown, Figure 10As shown, the semiconductor structure 10 further comprises:

[0075] The grid structure comprises a first grid structure 501 and a second grid structure 502, the first grid structure 501 is located between adjacent color adjustment pieces 303, and the second grid structure 502 is located between adjacent color filters 202.

[0076] It can be understood that the grid structure needs to be formed by a light shielding material, preferably a metal film or a composite film such as aluminum (Al), tungsten (W), or copper (Cu), etc. The metal material has high light shielding performance and is easy to process through fine processing such as etching.

[0077] Optionally, the first grid structure 501 is offset towards the center direction of the two-dimensional pixel array relative to the corresponding second grid structure 502 below.

[0078] Since a single grid structure cannot prevent the vignetting phenomenon and the leakage of incident light in the edge area of the pixel array, the sensitivity of the photosensitive element is deteriorated. Therefore, in the embodiment of the present application, the first grid structure is located between adjacent color adjustment pieces, and the second grid structure is located between adjacent color filters. By offsetting the first grid structure relative to the corresponding second grid structure below towards the center direction of the two-dimensional pixel array, the pupil correction amount of the region can be changed. So that the light enters the semiconductor structure without leakage, preventing the sensitivity of the photosensitive element from deteriorating.

[0079] The present application also provides an image sensor comprising the above-mentioned semiconductor structure 10. In order to solve the problem that a single layer of color filter cannot meet the requirements of multi-spectrum, a spectrum regulation layer is arranged above the filter layer, the spectrum regulation layer comprises a plurality of color adjustment pieces with overlapping wavelength ranges with the color filters. The combination of double layers of different color filters can provide more color channels for the pixel array. The absorption of the color filter can weaken the reflection of the surface of the semiconductor structure, and alleviate the problem of stray light related to the image. Therefore, the combination of the filter layer and the spectrum regulation layer as the optical structure of the semiconductor structure is beneficial to better realize high spectral resolution. In order to realize pupil correction, at least part of the color adjustment pieces are offset towards the center direction of the two-dimensional pixel array relative to the corresponding color filters below, thereby improving the sensitivity of the photosensitive element.

[0080] The above is a further detailed description of the present application in combination with specific preferred embodiments, and the specific implementation of the present application cannot be limited to these descriptions. For ordinary skilled persons in the technical field to which the present application belongs, without departing from the concept of the present application, a number of simple deductions or substitutions can be made, which should be considered as falling within the protection scope of the present application.

Claims

1. A semiconductor structure for multispectral absorption, characterized in that, include: The photosensitive device layer includes multiple photosensitive elements arranged in a two-dimensional pixel array; A filter layer is located on one side of the photosensitive device layer. The filter layer includes a variety of color filters of different colors, and the color filters are arranged one-to-one with the photosensitive elements to form corresponding pixels. A spectral modulation layer is located on the side of the filter layer away from the photosensitive device layer. The spectral modulation layer includes a plurality of color tone plates, the wavelength ranges of which overlap with the corresponding light wavelength ranges of the color tone plates and at least a portion of the color tone plates are offset relative to the corresponding light wavelength ranges below them toward the center of the two-dimensional pixel array.

2. The semiconductor structure as described in claim 1, characterized in that, Along the vertical direction from the photosensitive device layer to the spectral control layer, each color filter is correspondingly arranged with at least two adjacent color filters of different colors.

3. The semiconductor structure as described in claim 2, characterized in that, The filter layer uses a 4x4 arrangement of adjacent color filters as a basic repeating unit, and each color filter is set to correspond to the four adjacent color filters arranged in a 2x2 pattern at the center of the basic repeating unit.

4. The semiconductor structure as described in claim 1, characterized in that, The color palette includes at least a first color palette and a second color palette, wherein the first color palette and the second color palette are different colors; and / or, The color palette includes at least a third color palette and a fourth color palette, and the third color palette and the fourth color palette have different sizes.

5. The semiconductor structure as described in claim 1, characterized in that, In at least some of the corresponding pixels, the color filter is offset relative to the photosensitive element toward the center of the two-dimensional pixel array.

6. The semiconductor structure as described in claim 1, characterized in that, The semiconductor structure also includes: A microlens layer is located on the side of the spectral modulation layer away from the filter layer. The microlens layer includes a plurality of microlenses, which are offset relative to the color palette below towards the center of the two-dimensional pixel array.

7. The semiconductor structure as described in claim 1, characterized in that, The semiconductor structure includes at least a first region located at the center of the two-dimensional pixel array and a second region located at the edge of the two-dimensional pixel array; In the first region, the color palette is offset by a distance 'a' relative to the corresponding color filter below it in the direction toward the center of the two-dimensional pixel array. In the second region, the color palette is offset by a distance 'b' relative to the corresponding color filter below it in the direction toward the center of the two-dimensional pixel array, and a < b.

8. The semiconductor structure as described in claim 1, characterized in that, The semiconductor structure also includes: The grid structure includes a first grid structure and a second grid structure, wherein the first grid structure is located between adjacent color palettes and the second grid structure is located between adjacent color filters.

9. The semiconductor structure as described in claim 8, characterized in that, The first grid structure is offset toward the center of the two-dimensional pixel array relative to the corresponding second grid structure below it.

10. An image sensor, characterized in that, A semiconductor structure comprising the multispectral absorption as described in any one of claims 1-9.

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