Semiconductor module for converter braking circuit

Abstract

The utility model discloses a semiconductor module for a brake circuit of a converter device. The semiconductor module comprises a bottom plate; a DCB board; a plurality of collector copper sheets, a plurality of emitter copper sheets and a plurality of gate copper sheets; each IGBT chip group comprises a collector electrode, an emitter electrode and a gate electrode; the at least one diode chip group comprises an anode and a cathode; a module collector terminal and a module emitter terminal; a module emitter pin and a module gate pin; the module collector terminal is positioned on one side of the bottom plate, and the module emitter terminal is positioned on the other side of the bottom plate; the module collector terminal is connected with one of the collector copper sheets, and the collector copper sheet connected with the module collector terminal is connected with the other collector copper sheets; the module emitter terminal is connected with one of the emitter copper sheets, and the emitter copper sheet connected with the module emitter terminal is connected with the other emitter copper sheets. According to the utility model, the problems of insufficient heating and utilization rate, insufficient efficiency and the like of the semiconductor module in the use process can be solved.

Description

Technical Field

[0001] This utility model relates to the field of power conversion and frequency conversion technology, specifically to a semiconductor module for the braking circuit of a power converter. Background Technology

[0002] Three-phase AC / DC converters are commonly used in motor control, power generation, or power supply applications. To prevent overvoltage on the DC bus in case of system malfunctions, a chopper circuit is typically added to the DC bus. The chopper circuit works by turning on its switching transistor when the DC bus voltage exceeds the chopper's operating set value. This allows the chopper resistor to consume DC power and reduce the bus voltage. Conversely, when the DC bus voltage is below the operating set value, the chopper circuit's switching transistor is turned off.

[0003] However, chopper circuits have short operating times, and it's difficult to find compatible semiconductor modules on the market. Current technology typically uses two-level half-bridge semiconductor modules for chopper circuits in AC / DC converters. The drawback of this approach is that when using a two-level half-bridge module as the switching transistor in the chopper circuit of an AC / DC converter, the utilization rate of the diodes in the upper and lower bridges is insufficient. Furthermore, even if suitable semiconductor modules exist on the market to adapt to chopper circuits, their internal layout and connections may be flawed, leading to problems such as overheating and low utilization rates. Utility Model Content

[0004] This utility model provides a semiconductor module for the braking circuit of a converter, aiming to solve the problems of heat generation, insufficient utilization, and insufficient efficiency of semiconductor modules during use.

[0005] To address the aforementioned technical problems, this utility model provides a semiconductor module for a braking circuit of a converter, comprising:

[0006] Base plate;

[0007] The DCB board is disposed above the base plate and is used for insulation and heat conduction.

[0008] A copper foil is disposed above the DCB board, and the copper foil includes multiple collector copper foils, multiple emitter copper foils, and multiple gate copper foils;

[0009] Multiple IGBT chip sets are mounted on top of the copper foil, and each IGBT chip set includes a collector, an emitter, and a gate.

[0010] At least one diode chip set is mounted on top of the copper foil, the diode chip set comprising multiple diode chips, and each diode chip comprising an anode and a cathode;

[0011] A module terminal group, the module terminal group including multiple module collector terminals and multiple module emitter terminals;

[0012] A module pin group, the module pin group comprising at least one module emitter pin and at least one module gate pin;

[0013] The plurality of module collector terminals are located on one side of the base plate, and the plurality of module emitter terminals are located on the other side of the base plate; the plurality of module collector terminals are connected to one of the plurality of collector copper foils, and the collector copper foil connected to the module collector terminals is also connected to the remaining collector copper foils; the plurality of module emitter terminals are connected to one of the plurality of emitter copper foils, and the emitter copper foil connected to the module emitter terminals is also connected to the remaining emitter copper foils.

[0014] Furthermore, the DCB board includes a first DCB board and a second DCB board, which are arranged side by side above the base plate.

[0015] The collector copper foil includes a first collector copper foil and a second collector copper foil, the emitter copper foil includes a first emitter copper foil and a second emitter copper foil, and the gate copper foil includes a first gate copper foil and a second gate copper foil.

[0016] The first collector copper foil, the first emitter copper foil, and the first gate copper foil are arranged in a top-to-bottom manner above the first DCB board, and the second collector copper foil, the second emitter copper foil, and the second gate copper foil are arranged in a top-to-bottom manner above the second DCB board.

[0017] Furthermore, the IGBT chipset includes a first IGBT chipset and a second IGBT chipset, wherein the first IGBT chipset is disposed on the first collector copper foil, and the second IGBT chipset is disposed on the second collector copper foil.

[0018] Furthermore, the collector of the first IGBT chip group is soldered to the first collector copper foil, and the collector of the second IGBT chip group is soldered to the second collector copper foil.

[0019] The emitter of the first IGBT chip group is connected to the first emitter copper foil via a bonding wire, and the emitter of the second IGBT chip group is connected to the second emitter copper foil via a bonding wire;

[0020] The gate of the first IGBT chip group is connected to the first gate copper foil via a bonding wire, and the gate of the second IGBT chip group is connected to the second gate copper foil via a bonding wire.

[0021] Furthermore, the first IGBT chip group includes M IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil. The second IGBT chip is located to the upper right of the first IGBT chip and soldered to the first collector copper foil. The third IGBT chip is located to the upper right of the second IGBT chip and soldered to the first collector copper foil. And so on, with the Mth chip located to the upper right of the (M-1)th IGBT chip and soldered to the first collector copper foil.

[0022] The second IGBT chipset contains N IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the second collector copper foil. The second IGBT chip is located to the upper right of the first IGBT chip and soldered to the second collector copper foil. The third IGBT chip is located to the upper right of the second IGBT chip and soldered to the second collector copper foil, and so on. The Nth chip is located to the upper right of the (N-1)th IGBT chip and soldered to the second collector copper foil.

[0023] Furthermore, the diode chipset includes a first diode chipset and a second diode chipset;

[0024] The anode of the diode chip in the first diode chip group is connected to the emitter of the first IGBT chip group, and the anode of the diode chip in the second diode chip group is connected to the emitter of the second IGBT chip group through a bonding wire.

[0025] In the first diode chip group, the cathode of the diode chip is soldered to the first collector copper sheet, and in the second diode chip group, the cathode of the diode chip is soldered to the second collector copper sheet.

[0026] Furthermore, the module collector terminal includes a first module collector terminal and a second module collector terminal, which are located at two positions on the left side of the base plate.

[0027] The module transmitter terminals include a first module transmitter terminal and a second module transmitter terminal, which are located at the top and bottom of the right side of the base plate.

[0028] Furthermore, the first module collector terminal and the second module collector terminal are respectively connected to the first collector copper foil via a bonding wire, and the first collector copper foil and the second collector copper foil are connected via a bonding wire.

[0029] The first module transmitter terminal and the second module transmitter terminal are respectively connected to the second transmitter copper foil via bonding wires, and the first transmitter copper foil and the second transmitter copper foil are connected via bonding wires.

[0030] Furthermore, there are two module emitter pins and two module gate pins. The two module emitter pins are respectively connected to the first emitter copper foil and the second emitter copper foil via bonding wires. The two module emitter pins are respectively connected to the first gate copper foil and the second gate copper foil via bonding wires.

[0031] The module pin group also includes a module collector pin, which is connected to the first collector copper foil or the second collector copper foil via a bonding wire.

[0032] Furthermore, the rated current capability of the IGBT chipset is more than twice that of the rated current capability of the diode chipset.

[0033] The semiconductor module for the braking circuit of a converter device provided in this embodiment of the invention, by changing the ratio of IGBT chips to diode chips, makes the semiconductor module suitable for the braking circuit of a converter / frequency converter device, without wasting semiconductors and packaging resources. Simultaneously, this embodiment of the invention also reduces uneven current distribution among the chips and prevents uneven chip heating through chip layout, bonding wire connections, and reasonable terminal allocation, thereby reducing parasitic inductance within the semiconductor module and improving its performance. Compared with the prior art, the beneficial effects of this embodiment of the invention include:

[0034] (1) Increase the current, number and proportion of IGBT chips, and reduce the current, number and proportion of diode chips, so that the semiconductor module can be used especially in chopper circuit applications in the field of power conversion and frequency conversion.

[0035] (2) A reasonable internal chip layout can achieve good chip heat dissipation performance and reduce the temperature rise of the internal chips of the module.

[0036] (3) By applying the existing half-bridge semiconductor packaging structure, all IGBT chips are connected in parallel, which improves the packaging utilization rate;

[0037] (4) The good terminal allocation, copper layout and bonding wire connection scheme make the parasitic parameters inside the IGBT module very small, and can obtain better performance when using semiconductor modules for design. Attached Figure Description

[0038] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0039] Figure 1 This utility model provides a schematic diagram of the structure of a semiconductor module for a converter braking circuit;

[0040] Figure 2 This utility model provides a schematic diagram of another perspective of the structure of a semiconductor module for a braking circuit of a converter.

[0041] Figure 3 A schematic diagram of a second embodiment of a semiconductor module for a braking circuit of a converter provided in this utility model;

[0042] Figure 4 A schematic diagram of a third embodiment of a semiconductor module for a braking circuit of a converter provided by this utility model;

[0043] Figure 5 This utility model provides a schematic diagram of a fourth embodiment of a semiconductor module for a braking circuit of a converter.

[0044] Markings in the image:

[0045] 1. Base plate;

[0046] 21. First DCB board; 22. Second DCB board;

[0047] 31. First collector copper foil; 32. Second collector copper foil; 33. First emitter copper foil; 34. Second emitter copper foil; 35. First gate copper foil; 36. Second gate copper foil;

[0048] 41. First IGBT chipset; 42. Second IGBT chipset;

[0049] 51. First diode chipset; 52. Second diode chipset;

[0050] 61. First module collector terminal; 62. Second module collector terminal; 63. First module emitter terminal; 64. Second module emitter terminal;

[0051] 71. Module collector pin; 72. Module emitter pin; 73. Module gate pin;

[0052] 8. Binding line. Detailed Implementation

[0053] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those skilled in the art without creative effort are within the protection scope of the present utility model.

[0054] It should be understood that, when used in this specification and the appended claims, the terms "comprising" and "including" indicate the presence of the described features, integrals, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, integrals, steps, operations, elements, components and / or collections thereof.

[0055] It should also be understood that the terminology used in this specification is for the purpose of describing particular embodiments only and is not intended to limit the scope of the invention. As used in this specification and the appended claims, the singular forms “a,” “an,” and “the” are intended to include the plural forms unless the context clearly indicates otherwise.

[0056] It should also be further understood that the term "and / or" as used in this specification and the appended claims refers to any combination of one or more of the associated listed items and all possible combinations, and includes such combinations.

[0057] The implementation of the present invention will be described in detail below with reference to the overall implementation scheme.

[0058] Implementation Case 1

[0059] Combination Figure 1 and Figure 2The semiconductor module for the braking circuit of the converter provided in this embodiment specifically includes a base plate 1, two DCB boards with insulating and heat-conducting functions (i.e., the first DCB board 21 and the second DCB board 22), two IGBT chip sets (i.e., the first IGBT chip set 41 and the second IGBT chip set 42), a diode chip set (for clarity, the single diode chip set here is referred to as the first diode chip set 51, the same below), two collector copper sheets (i.e., the first collector copper sheet 31 and the second collector copper sheet 32), two emitter copper sheets (i.e., the first emitter copper sheet 33 and the second emitter copper sheet 34), two gate copper sheets (i.e., the first gate copper sheet 35 and the second gate copper sheet 36), two externally connected module collector terminals (i.e., the first module collector terminal 61 and the second module collector terminal 62), two externally connected module emitter terminals (i.e., the first module emitter terminal 63 and the second module emitter terminal 64), one externally connected module gate pin 73, and one externally connected module emitter pin 72.

[0060] The base plate 1, DCB board, terminals, chips, pins, etc. can all be components with existing mature packaging.

[0061] The base plate 1 is square on top and is made of copper plate with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface on top.

[0062] Both the first DCB plate 21 and the second DCB plate 22 are aluminum oxide plates with excellent thermal conductivity. The lower surface is the welding surface of the base plate 1, and the upper surface is the copper foil welding surface.

[0063] The first IGBT chip group 41 and the second IGBT chip group 42 each contain three 1700V / 300A IGBT chips. Each IGBT chip contains three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0064] The first diode chip group 51 includes a 1700V / 100A diode chip, and each diode chip includes two electrodes, namely an anode for current inflow and a cathode for current outflow.

[0065] The upper surface of the base plate 1 is rectangular. The direction perpendicular to the upper surface of the base plate 1 is perpendicular to the long side of the rectangle. The first module collector terminal 61 is located at the upper left position of the base plate 1, the second module collector terminal 62 is located at the lower left position of the base plate 1, the first module emitter terminal 63 is located at the upper right position of the base plate 1, the first DCB board 21 is welded to the left side of the base plate 1, the second DCB board 22 is welded to the right side of the base plate 1, the first collector copper foil 31 is located at the upper part of the first DCB board 21, the first emitter copper foil 33 is located at the lower part of the first DCB board 21, the second collector copper foil 32 is located at the upper part of the second DCB board 22, and the second emitter copper foil 34 is located at the lower part of the second DCB board 22.

[0066] The lower surfaces of the first DCB board 21 and the second DCB board 22 are welded side-by-side to the base plate 1. The first IGBT collector copper foil, the first emitter copper foil 33, and the first gate copper foil 35 are welded to the upper surface of the first DCB board 21. The second collector copper foil 32, the second emitter copper foil 34, and the second gate copper foil 36 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 41 is welded to the first collector copper foil 31. The collector of the second IGBT chip group 42 is welded to the second collector copper foil 32. The cathode of the first diode chip group 51 is welded to the first collector copper foil 31.

[0067] The first module collector terminal 61 and the second module collector terminal 62 are connected to the first collector copper foil 31 via a bonding wire 8. The first collector copper foil 31 and the second collector copper foil 32 are connected via a bonding wire 8. The first module emitter terminal 63 and the second module emitter terminal 64 are connected to the second emitter copper foil 34 via a bonding wire 8. The first emitter copper foil 33 and the second emitter copper foil 34 are connected via a bonding wire 8.

[0068] The emitter of the first IGBT chip group 41 is connected to the first emitter copper foil 33 via a bonding wire 8. The emitter of the second IGBT chip group 42 is connected to the second emitter copper foil 34 via a bonding wire 8. The anode of the diode chip group is connected to the emitter of the first IGBT chip group 41 via a bonding wire 8. The gate of the first IGBT chip group 41 is connected to the first gate copper foil 35 via a bonding wire 8. The gate of the second IGBT chip group 42 is connected to the second gate copper foil 36 via a bonding wire 8.

[0069] The first gate copper foil 35, the second gate copper foil 36, and the externally connected module gate pin 73 are connected by a binding wire 8. The first emitter copper foil 33, the second emitter copper foil 34, and the externally connected module emitter pin 72 are connected by a binding wire 8.

[0070] The first IGBT chipset 41 and the second IGBT chipset 42 each contain three IGBT chips with a rated current capability of 300A, and the first diode chipset 51 contains one diode chip with a rated current capability of 100A. Therefore, the combined current capability of all the IGBT chips is much greater than the combined current capability of all the IGBTs in the diode chipset. Here, "much greater than" means that the rated current capability of the former is more than twice that of the latter.

[0071] The first IGBT chip group 41 contains three IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil 31. The second IGBT chip is located to the upper right of the first IGBT chip and is soldered to the first collector copper foil 31. The third IGBT chip is located to the upper right of the second IGBT chip and is soldered to the first collector copper foil 31.

[0072] The second IGBT chipset 42 contains three IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil 31. The second IGBT chip is located to the upper right of the first IGBT chip and is soldered to the second collector copper foil 32. The third IGBT chip is located to the upper right of the second IGBT chip and is soldered to the second collector copper foil 32.

[0073] In addition, perpendicular to the upper surface of the base plate 1, there is an insulating shell around the base plate 1. The DCB board is surrounded by the insulating shell. The DCB board, copper foil, IGBT chipset, diode chipset, and bonding wire 8 are all covered with insulating glue.

[0074] The aforementioned IGBT semiconductor module encapsulates six 300A IGBT chips and one 100A diode chip. Its IGBT rated output capability is 1700V / 1800A. This IGBT semiconductor module is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0075] In some optional embodiments, when the above-mentioned IGBT semiconductor module is used in conjunction with an external freewheeling diode in a chopper module for the field of power conversion and frequency conversion, the chopper module has the capability equivalent to that of a chopper module composed of two 1700V / 900A IGBT half-bridge modules, or the capability equivalent to that of a chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0076] Implementation Case 2

[0077] like Figure 3As shown, the semiconductor module for the braking circuit of the converter device provided in this embodiment specifically includes a base plate 1, two DCB boards with insulating and heat-conducting functions (i.e., the first DCB board 21 and the second DCB board 22), two IGBT chip sets (i.e., the first IGBT chip set 41 and the second IGBT chip set 42), two diode chip sets (i.e., the first diode chip set 51 and the second diode chip set 52), two collector copper sheets (i.e., the first collector copper sheet 31 and the second collector copper sheet 32), two emitter copper sheets (i.e., the first emitter copper sheet 33 and the second emitter copper sheet 34), two gate copper sheets (i.e., the first gate copper sheet 35 and the second gate copper sheet 36), two externally connected module collector terminals (i.e., the first module collector terminal 61 and the second module collector terminal 62), two externally connected module emitter terminals (i.e., the first module emitter terminal 63 and the second module emitter terminal 64), one externally connected module gate pin 73, and one externally connected module emitter pin 72.

[0078] The base plate 1, DCB board, terminals, chips, pins, etc. can all be components with existing mature packaging.

[0079] The base plate 1 is square on top and is made of copper plate with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface on top.

[0080] The first DCB plate 21 and the second DCB plate 22 are aluminum oxide plates with excellent thermal conductivity. The lower surface is the welding surface of the base plate 1, and the upper surface is the copper foil welding surface.

[0081] The first IGBT chip group 41 and the second IGBT chip group 42 each contain three 1700V / 300A IGBT chips. Each IGBT chip contains three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0082] The first diode chip group 51 and the second diode chip group 52 each contain a 1700V / 100A diode chip. Each diode chip contains two electrodes, namely an anode for current inflow and a cathode for current outflow.

[0083] The upper surface of the base plate 1 is rectangular. The direction perpendicular to the upper surface of the base plate 1 is perpendicular to the long side of the rectangle. The first module collector terminal 61 is located at the upper left position of the base plate 1, the second module collector terminal 62 is located at the lower left position of the base plate 1, the first module emitter terminal 63 is located at the upper right position of the base plate 1, the first DCB board 21 is welded to the left side of the base plate 1, the second DCB board 22 is welded to the right side of the base plate 1, the first collector copper foil 31 is located at the upper part of the first DCB board 21, the first emitter copper foil 33 is located at the lower part of the first DCB board 21, the second collector copper foil 32 is located at the upper part of the second DCB board 22, and the second emitter copper foil 34 is located at the lower part of the second DCB board 22.

[0084] The lower surfaces of the first DCB board 21 and the second DCB board 22 are welded side-by-side to the base plate 1. The first IGBT collector copper foil, the first emitter copper foil 33, and the first gate copper foil 35 are welded to the upper surface of the first DCB board 21. The second collector copper foil 32, the second emitter copper foil 34, and the second gate copper foil 36 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 41 is welded to the first collector copper foil 31. The collector of the second IGBT chip group 42 is welded to the second collector copper foil 32. The cathode of the first diode chip group 51 is welded to the first collector copper foil 31. The cathode of the second diode chip group 52 is welded to the second collector copper foil 32.

[0085] The first module collector terminal 61 and the second module collector terminal 62 are connected to the first collector copper foil 31 via a bonding wire 8. The first collector copper foil 31 and the second collector copper foil 32 are connected via a bonding wire 8. The first module emitter terminal 63 and the second module emitter terminal 64 are connected to the second emitter copper foil 34 via a bonding wire 8. The first emitter copper foil 33 and the second emitter copper foil 34 are connected via a bonding wire 8.

[0086] The emitter of the first IGBT chip group 41 is connected to the first emitter copper foil 33 via a bonding wire 8. The emitter of the second IGBT chip group 42 is connected to the second emitter copper foil 34 via a bonding wire 8. The anode of the first diode chip group 51 is connected to the emitter of the first IGBT chip group 41 via a bonding wire 8. The anode of the second diode chip group 52 is connected to the emitter of the second IGBT chip group 42 via a bonding wire 8. The gate of the first IGBT chip group 41 is connected to the first gate copper foil 35 via a bonding wire 8. The gate of the second IGBT chip group 42 is connected to the second gate copper foil 36 via a bonding wire 8.

[0087] The first gate copper foil 35, the second gate copper foil 36, and the externally connected module gate pin 73 are connected by a binding wire 8. The first emitter copper foil 33, the second emitter copper foil 34, and the externally connected module emitter pin 72 are connected by a binding wire 8.

[0088] The first IGBT chip group 41 and the second IGBT chip group 42 each contain three IGBT chips with a rated current capability of 300A, and the first diode chip group 51 and the second diode chip group 52 each contain one diode chip with a rated current capability of 100A. Therefore, the combined current capability of all IGBT chips is much greater than the combined current capability of all IGBTs in the diode chip group. Here, "much greater than" means that the rated current capability of the former is more than twice that of the latter.

[0089] The first IGBT chip group 41 contains three IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil 31. The second IGBT chip is located to the upper right of the first IGBT chip and is soldered to the first collector copper foil 31. The third IGBT chip is located to the upper right of the second IGBT chip and is soldered to the first collector copper foil 31.

[0090] The second IGBT chipset 42 contains three IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil 31. The second IGBT chip is located to the upper right of the first IGBT chip and is soldered to the second collector copper foil 32. The third IGBT chip is located to the upper right of the second IGBT chip and is soldered to the second collector copper foil 32.

[0091] In addition, perpendicular to the upper surface of the base plate 1, there is an insulating shell around the base plate 1. The DCB board is surrounded by the insulating shell. The DCB board, copper foil, IGBT chipset, diode chipset, and bonding wire 8 are all covered with insulating glue.

[0092] The aforementioned IGBT semiconductor module encapsulates six 300A IGBT chips and one 100A diode chip. Its IGBT rated output capability is 1700V / 1800A. This IGBT semiconductor module is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0093] In some optional embodiments, when the above module is used in conjunction with an external freewheeling diode in a chopper module for the field of power conversion and frequency conversion, the chopper module has the capability equivalent to that of a chopper module composed of two 1700V / 900A IGBT half-bridge modules, or the capability equivalent to that of a chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0094] Implementation Case 3

[0095] like Figure 4 As shown, the semiconductor module for the braking circuit of the converter device provided in this embodiment specifically includes a base plate 1, two DCB boards with insulating and heat-conducting functions (i.e., the first DCB board 21 and the second DCB board 22), two IGBT chip sets (i.e., the first IGBT chip set 41 and the second IGBT chip set 42), a diode chip set (i.e., the first diode chip set 51), two collector copper sheets (i.e., the first collector copper sheet 31 and the second collector copper sheet 32), two emitter copper sheets (i.e., the first emitter copper sheet 33 and the second emitter copper sheet 34), two gate copper sheets (i.e., the first gate copper sheet 35 and the second gate copper sheet 36), two externally connected module collector terminals (i.e., the first module collector terminal 61 and the second module collector terminal 62), two externally connected module emitter terminals (i.e., the first module emitter terminal 63 and the second module emitter terminal 64), two externally connected module gate pins 73, and two externally connected module emitter pins 72.

[0096] The base plate 1, DCB board, terminals, chips, pins, etc. can all be components with existing mature packaging.

[0097] The base plate 1 is square on top and is made of copper plate with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface on top.

[0098] The first DCB plate 21 and the second DCB plate 22 are aluminum oxide plates with excellent thermal conductivity. The lower surface is the welding surface of the base plate 1, and the upper surface is the copper foil welding surface.

[0099] The first IGBT chip group 41 and the second IGBT chip group 42 each contain three 1700V / 300A IGBT chips. Each IGBT chip contains three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0100] The first diode chip group 51 includes a 1700V / 100A diode chip, and each diode chip includes two electrodes, namely an anode for current inflow and a cathode for current outflow.

[0101] The upper surface of the base plate 1 is rectangular. The direction perpendicular to the upper surface of the base plate 1 is perpendicular to the long side of the rectangle. The first module collector terminal 61 is located at the upper left position of the base plate 1, the second module collector terminal 62 is located at the lower left position of the base plate 1, the first module emitter terminal 63 is located at the upper right position of the base plate 1, the first DCB board 21 is welded to the left side of the base plate 1, the second DCB board 22 is welded to the right side of the base plate 1, the first collector copper foil 31 is located at the upper part of the first DCB board 21, the first emitter copper foil 33 is located at the lower part of the first DCB board 21, the second collector copper foil 32 is located at the upper part of the second DCB board 22, and the second emitter copper foil 34 is located at the lower part of the second DCB board 22.

[0102] The lower surfaces of the first DCB board 21 and the second DCB board 22 are welded side-by-side to the base plate 1. The first IGBT collector copper foil, the first emitter copper foil 33, and the first gate copper foil 35 are welded to the upper surface of the first DCB board 21. The second collector copper foil 32, the second emitter copper foil 34, and the second gate copper foil 36 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 41 is welded to the first collector copper foil 31. The collector of the second IGBT chip group 42 is welded to the second collector copper foil 32. The cathode of the first diode chip group 51 is welded to the first collector copper foil 31.

[0103] The first module collector terminal 61 and the second module collector terminal 62 are connected to the first collector copper foil 31 via a bonding wire 8. The first collector copper foil 31 and the second collector copper foil 32 are connected via a bonding wire 8. The first module emitter terminal 63 and the second module emitter terminal 64 are connected to the second emitter copper foil 34 via a bonding wire 8. The first emitter copper foil 33 and the second emitter copper foil 34 are connected via a bonding wire 8.

[0104] The emitter of the first IGBT chip group 41 is connected to the first emitter copper foil 33 via a bonding wire 8. The emitter of the second IGBT chip group 42 is connected to the second emitter copper foil 34 via a bonding wire 8. The anode of the diode chip group is connected to the emitter of the first IGBT chip group 41 via a bonding wire 8. The gate of the first IGBT chip group 41 is connected to the first gate copper foil 35 via a bonding wire 8. The gate of the second IGBT chip group 42 is connected to the second gate copper foil 36 via a bonding wire 8.

[0105] The first gate pin is connected to the first gate copper foil 35 via a bonding wire 8, the first emitter pin is connected to the first emitter copper foil 33 via a bonding wire 8, the second gate pin is connected to the second gate copper foil 36 via a bonding wire 8, and the second emitter pin is connected to the second emitter copper foil 34 via a bonding wire 8.

[0106] The first IGBT chipset 41 and the second IGBT chipset 42 each contain three IGBT chips with a rated current capability of 300A, and the first diode chipset 51 contains one diode chip with a rated current capability of 100A. Therefore, the combined current capability of all the IGBT chips is much greater than the combined current capability of all the IGBTs in the diode chipset. Here, "much greater than" means that the rated current capability of the former is more than twice that of the latter.

[0107] The first IGBT chip group 41 contains three IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil 31. The second IGBT chip is located to the upper right of the first IGBT chip and soldered to the first collector copper foil 31. The third IGBT chip is located to the upper right of the second IGBT chip and soldered to the first collector copper foil 31.

[0108] The second IGBT chipset 42 contains three IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil 31. The second IGBT chip is located to the upper right of the first IGBT chip and soldered to the second collector copper foil 32. The third IGBT chip is located to the upper right of the second IGBT chip and soldered to the second collector copper foil 32.

[0109] In addition, perpendicular to the upper surface of the base plate 1, there is an insulating shell around the base plate 1. The DCB board is surrounded by the insulating shell. The DCB board, copper foil, IGBT chipset, diode chipset, and bonding wire 8 are all covered with insulating glue.

[0110] The aforementioned IGBT semiconductor module encapsulates six 300A IGBT chips and one 100A diode chip. Its IGBT rated output capability is 1700V / 1800A. This IGBT semiconductor module is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0111] In some optional embodiments, when the above-mentioned IGBT semiconductor module is used in conjunction with an external freewheeling diode in a chopper module for the field of power conversion and frequency conversion, the chopper module has the capability equivalent to that of a chopper module composed of two 1700V / 900A IGBT half-bridge modules, or the capability equivalent to that of a chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0112] Implementation Case 4

[0113] like Figure 5 As shown, the semiconductor module for the braking circuit of the converter device provided in this embodiment specifically includes a base plate 1, two DCB boards with insulating and heat-conducting functions (i.e., the first DCB board 21 and the second DCB board 22), two IGBT chip sets (i.e., the first IGBT chip set 41 and the second IGBT chip set 42), a diode chip set (i.e., the first diode chip set 51), two collector copper sheets (i.e., the first collector copper sheet 31 and the second collector copper sheet 32), two emitter copper sheets (i.e., the first emitter copper sheet 33 and the second emitter copper sheet 34), two gate copper sheets (i.e., the first gate copper sheet 35 and the second gate copper sheet 36), two externally connected module collector terminals (i.e., the first module collector terminal 61 and the second module collector terminal 62), two externally connected module emitter terminals (i.e., the first module emitter terminal 63 and the second module emitter terminal 64), one externally connected module gate pin 73, one externally connected module emitter pin 72, and one externally connected module collector pin 71.

[0114] The base plate 1, DCB board, terminals, chips, pins, etc. can all be components with existing mature packaging.

[0115] The base plate 1 is square on top and is made of copper plate with excellent thermal conductivity. There is a mounting hole at each of the four corners and a rectangular mounting surface on top.

[0116] Both the first DCB plate 21 and the second DCB plate 22 are aluminum oxide plates with excellent thermal conductivity. The lower surface is the welding surface of the base plate 1, and the upper surface is the copper foil welding surface.

[0117] The first IGBT chip group 41 and the second IGBT chip group 42 each contain three 1700V / 300A IGBT chips. Each IGBT chip contains three electrodes: a collector for current inflow, an emitter for current outflow, and a gate for controlling the conduction of the IGBT chip.

[0118] The first diode chip group 51 includes a 1700V / 100A diode chip, and each diode chip includes two electrodes, namely an anode for current inflow and a cathode for current outflow.

[0119] The upper surface of the base plate 1 is rectangular. The direction perpendicular to the upper surface of the base plate 1 is perpendicular to the long side of the rectangle. The first module collector terminal 61 is located at the upper left position of the base plate 1, the second module collector terminal 62 is located at the lower left position of the base plate 1, the first module emitter terminal 63 is located at the upper right position of the base plate 1, the first DCB board 21 is welded to the left side of the base plate 1, the second DCB board 22 is welded to the right side of the base plate 1, the first collector copper foil 31 is located at the upper part of the first DCB board 21, the first emitter copper foil 33 is located at the lower part of the first DCB board 21, the second collector copper foil 32 is located at the upper part of the second DCB board 22, and the second emitter copper foil 34 is located at the lower part of the second DCB board 22.

[0120] The lower surfaces of the first DCB board 21 and the second DCB board 22 are welded side-by-side to the base plate 1. The first IGBT collector copper foil, the first emitter copper foil 33, and the first gate copper foil 35 are welded to the upper surface of the first DCB board 21. The second collector copper foil 32, the second emitter copper foil 34, and the second gate copper foil 36 are welded to the upper surface of the second DCB board 22. The collector of the first IGBT chip group 41 is welded to the first collector copper foil 31. The collector of the second IGBT chip group 42 is welded to the second collector copper foil 32. The cathode of the first diode chip group 51 is welded to the first collector copper foil 31.

[0121] The first module collector terminal 61 and the second module collector terminal 62 are connected to the first collector copper foil 31 via a bonding wire 8. The first collector copper foil 31 and the second collector copper foil 32 are connected via a bonding wire 8. The first module emitter terminal 63 and the second module emitter terminal 64 are connected to the second emitter copper foil 34 via a bonding wire 8. The first emitter copper foil 33 and the second emitter copper foil 34 are connected via a bonding wire 8.

[0122] The emitter of the first IGBT chip group 41 is connected to the first emitter copper foil 33 via a bonding wire 8. The emitter of the second IGBT chip group 42 is connected to the second emitter copper foil 34 via a bonding wire 8. The anode of the diode chip group is connected to the emitter of the first IGBT chip group 41 via a bonding wire 8. The gate of the first IGBT chip group 41 is connected to the first gate copper foil 35 via a bonding wire 8. The gate of the second IGBT chip group 42 is connected to the second gate copper foil 36 via a bonding wire 8.

[0123] The first gate copper foil 35, the second gate copper foil 36, and the externally connected module gate pin 73 are connected by a binding wire 8. The first emitter copper foil 33, the second emitter copper foil 34, and the externally connected module emitter pin 72 are connected by a binding wire 8.

[0124] The externally connected module collector pin 71 is connected to one of the first collector copper foil 31 and the second collector copper foil 32 via a bonding wire 8.

[0125] The first IGBT chip group 41 and the second IGBT chip group 42 each contain three IGBT chips with a rated current capability of 300A, and the diode chip group contains one diode chip with a rated current capability of 100A. Therefore, the total capability of all IGBT chips is much greater than the total capability of all IGBTs in the diode chip group.

[0126] The first IGBT chip group 41 contains three IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil 31. The second IGBT chip is located to the upper right of the first IGBT chip and is soldered to the first collector copper foil 31. The third IGBT chip is located to the upper right of the second IGBT chip and is soldered to the first collector copper foil 31.

[0127] The second IGBT chipset 42 contains three IGBT chips. The collector of the first IGBT chip is soldered to the lower left of the first collector copper foil 31. The second IGBT chip is located to the upper right of the first IGBT chip and is soldered to the second collector copper foil 32. The third IGBT chip is located to the upper right of the second IGBT chip and is soldered to the second collector copper foil 32.

[0128] In addition, perpendicular to the upper surface of the base plate 1, there is an insulating shell around the base plate 1. The DCB board is surrounded by the insulating shell. The DCB board, copper foil, IGBT chipset, diode chipset, and bonding wire 8 are all covered with insulating glue.

[0129] The aforementioned IGBT semiconductor module encapsulates six 300A IGBT chips and one 100A diode chip. Its IGBT rated output capability is 1700V / 1800A. This IGBT semiconductor module is more suitable for chopper modules in the field of power conversion and frequency conversion.

[0130] In some optional embodiments, when the above-mentioned IGBT semiconductor module is used in conjunction with an external freewheeling diode in a chopper module for the field of power conversion and frequency conversion, the chopper module has the capability equivalent to that of a chopper module composed of two 1700V / 900A IGBT half-bridge modules, or the capability equivalent to that of a chopper module composed of three 1700V / 600A IGBT half-bridge modules.

[0131] The various embodiments in this specification are described in a progressive manner, with each embodiment focusing on its differences from other embodiments. Similar or identical parts between embodiments can be referred to interchangeably. For the systems disclosed in the embodiments, since they correspond to the methods disclosed in the embodiments, the descriptions are relatively simple; relevant parts can be referred to in the method section. It should be noted that those skilled in the art can make various improvements and modifications to this application without departing from the principles of this application, and these improvements and modifications also fall within the protection scope of the claims of this application.

[0132] It should also be noted that, in this specification, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

Claims

1. A semiconductor module for a braking circuit of a current conversion device, characterized by, The application relates to a module for IGBT (Insulated Gate Bipolar Transistor) and diode, which comprises the following parts: a bottom plate; a DCB (Direct Copper Bonding) plate arranged above the bottom plate for insulation and heat conduction; a copper sheet arranged above the DCB plate, the copper sheet comprising a plurality of collector copper sheets, a plurality of emitter copper sheets and a plurality of gate copper sheets; a plurality of IGBT chip groups arranged above the copper sheet, each of the IGBT chip groups comprising a collector, an emitter and a gate; at least one diode chip group arranged above the copper sheet, the diode chip group comprising a plurality of diode chips, each of the diode chips comprising an anode and a cathode; a module terminal group comprising a plurality of module collector terminals and a plurality of module emitter terminals; a module pin group comprising at least one module emitter pin and at least one module gate pin; wherein the plurality of module collector terminals are arranged on one side of the bottom plate, the plurality of module emitter terminals are arranged on the other side of the bottom plate, the plurality of module collector terminals are connected to one of the plurality of collector copper sheets, and the collector copper sheet connected to the module collector terminal is also connected to the other collector copper sheets, and the plurality of module emitter terminals are connected to one of the plurality of emitter copper sheets, and the emitter copper sheet connected to the module emitter terminal is also connected to the other emitter copper sheets; the collector copper sheet comprises a first collector copper sheet and a second collector copper sheet, and the IGBT chip group comprises a first IGBT chip group and a second IGBT chip group, the first IGBT chip group is arranged on the first collector copper sheet, and the second IGBT chip group is arranged on the second collector copper sheet; the first IGBT chip group comprises M IGBT chips, the collector of a first IGBT chip among the M IGBT chips is welded to the lower left part of the first collector copper sheet, a second IGBT chip is arranged above the right of the first IGBT chip and is welded to the first collector copper sheet, a third IGBT chip is arranged above the right of the second IGBT chip and is welded to the first collector copper sheet, and a Mth chip is arranged above the right of an (M-1)th IGBT chip and is welded to the first collector copper sheet; the second IGBT chip group comprises N IGBT chips, the collector of a first IGBT chip among the N IGBT chips is welded to the lower left part of the second collector copper sheet, a second IGBT chip is arranged above the right of the first IGBT chip and is welded to the second collector copper sheet, a third IGBT chip is arranged above the right of the second IGBT chip and is welded to the second collector copper sheet, and an Nth chip is arranged above the right of an (N-1)th IGBT chip and is welded to the second collector copper sheet.

2. The semiconductor module for a braking circuit of a variable current device according to claim 1, characterized by, the DCB plate comprises a first DCB plate and a second DCB plate, and the first DCB plate and the second DCB plate are arranged above the bottom plate in a left-right side-by-side mode; the emitter copper sheet comprises a first emitter copper sheet and a second emitter copper sheet, and the gate copper sheet comprises a first gate copper sheet and a second gate copper sheet. The first collector copper skin, the first emitter copper skin and the first gate copper skin are arranged on the first DCB board in an up-down arrangement, and the second collector copper skin, the second emitter copper skin and the second gate copper skin are arranged on the second DCB board in an up-down arrangement.

3. The semiconductor module for a braking circuit of a variable current device according to claim 2, characterized by, The collector of the first IGBT chip group is welded on the first collector copper skin, and the collector of the second IGBT chip group is welded on the second collector copper skin. The emitter of the first IGBT chip group is connected to the first emitter copper skin through a binding wire, and the emitter of the second IGBT chip group is connected to the second emitter copper skin through a binding wire. The gate of the first IGBT chip group is connected to the first gate copper skin through a binding wire, and the gate of the second IGBT chip group is connected to the second gate copper skin through a binding wire.

4. The semiconductor module for a braking circuit of a variable current device according to claim 2, characterized by, The diode chip group includes a first diode chip group and a second diode chip group. The anode of the diode chip in the first diode chip group is connected to the emitter of the first IGBT chip group, and the anode of the diode chip in the second diode chip group is connected to the emitter of the second IGBT chip group through a binding wire. The cathode of the diode chip in the first diode chip group is welded on the first collector copper skin, and the cathode of the diode chip in the second diode chip group is welded on the second collector copper skin.

5. The semiconductor module for a braking circuit of a variable current device according to claim 2, characterized by, The module collector terminal includes a first module collector terminal and a second module collector terminal, and the first module collector terminal and the second module collector terminal are located on the upper and lower parts of the left side of the bottom plate. The module emitter terminal includes a first module emitter terminal and a second module emitter terminal, and the first module emitter terminal and the second module emitter terminal are located on the upper and lower parts of the right side of the bottom plate.

6. The semiconductor module for a braking circuit of a variable current device according to claim 5, characterized by, The first module collector terminal and the second module collector terminal are respectively connected to the first collector copper skin through a binding wire, and the first collector copper skin is connected to the second collector copper skin through a binding wire. The first module emitter terminal and the second module emitter terminal are respectively connected to the second emitter copper skin through a binding wire, and the first emitter copper skin is connected to the second emitter copper skin through a binding wire.

7. The semiconductor module for a braking circuit of a variable current device according to claim 2, characterized by, The module emitter pin and the module gate pin are both provided with two, and the two module emitter pins are respectively connected to the first emitter copper skin and the second emitter copper skin through a binding wire, and the two module emitter pins are respectively connected to the first gate copper skin and the second gate copper skin through a binding wire. The module pin group further includes a module collector pin, and the module collector pin is connected to the first collector copper skin or the second collector copper skin through a binding wire.

8. The semiconductor module for a braking circuit of a variable current device according to claim 1, characterized by, The rated current capacity of the IGBT chip group is more than twice the rated current capacity of the diode chip group.

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